CN103311220B - 一种线路修补结构及修补方法 - Google Patents

一种线路修补结构及修补方法 Download PDF

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CN103311220B
CN103311220B CN201310261423.4A CN201310261423A CN103311220B CN 103311220 B CN103311220 B CN 103311220B CN 201310261423 A CN201310261423 A CN 201310261423A CN 103311220 B CN103311220 B CN 103311220B
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patch cord
electric connection
data wire
connection line
pixel electrode
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徐亮
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明实施例公开了一种线路修补结构及修补方法，用于修补薄膜晶体管阵列基板上沿不同方向延伸的电连接线在相互交叉处所形成的断路。所述线路修补结构包括从断路点所在的电连接线朝同一侧延伸而出并连通断路点两端的修补线及保护图案。所述修补线穿过与断路点所在电连接线相交的另一电连接线。所述保护图案设置在修补线与修补线所穿过的电连接线之间。

Description

一种线路修补结构及修补方法
技术领域
本发明涉及显示面板领域，尤其涉及一种显示面板的线路修补结构及线路修补方法。
背景技术
现有显示面板一般采用主动薄膜晶体管阵列进行驱动。每个像素均需要连接至纵横交错的扫描线及数据线上进行选中及输入显示电压的操作。因现有显示面板的像素多达几百万，所需要的扫描线及数据线也接近一万条。然而，如此众多的线路中只要有几条出现断路，就会导致整个显示面板沦为次品，极大地影响了显示面板的良品率，增大了显示面板的生产成品。
因此，需要提供能够解决上述问题的线路修补方法及线路修补结构。
发明内容
为了解决上述技术问题，本发明提供了一种线路修补结构，其用于修补薄膜晶体管(ThinFilmTransistor，TFT)阵列基板上沿不同方向延伸的电连接线在相互交叉处所形成的断路。
一种线路修补结构，其用于修补薄膜晶体管阵列基板上沿不同方向延伸的电连接线在相互交叉处所形成的断路，所述薄膜晶体管阵列基板包括沿第一方向延伸的扫描线、沿第二方向延伸的数据线、位于扫描线与数据线相交处的TFT、及与TFT相连接的像素电极，所述线路修补结构包括从断路点所在的电连接线朝同一侧延伸而出并连通断路点两端的修补线及非晶硅保护图案，所述修补线穿过与断路点所在电连接线相交的另一电连接线，所述非晶硅保护图案设置在修补线与修补线所穿过的电连接线之间。
其中，所述修补线经过的其他像素的部分像素电极与对应像素内的像素电极的其他部分切断。
其中，所述非晶硅保护图案延伸至所覆盖的电连接线相邻两侧的像素电极上。
其中，所述非晶硅保护图案仅覆盖与断路点所在电连接线相交的另一电连接线。
其中，所述修补线通过激光化学气相沉积的方法将导电金属材料沉积在基板上而形成，所述修补线的两端通过激光将修补线与数据线相互熔融导通。
本发明还提供了一种线路修补方法，所述线路修补方法用于修补薄膜晶体管阵列基板上沿不同方向延伸的扫描线与数据线在相互交叉处所形成的断路，所述薄膜晶体管阵列基板包括沿第一方向延伸的扫描线、沿第二方向延伸的数据线、位于扫描线与数据线相交处的TFT、及与TFT相连接的像素电极，该线路修补方法包括：
在进行非晶硅曝光工艺的同时，在扫描线上距离扫描线与数据线相交处一预设值的位置处形成一非晶硅保护图案；
在数据线断点处的相对两端分别生长出修补线并相互连通；
切断修补线所经过的像素电极部分与对应像素的像素电极的其他部分；
通过激光将修补线在数据线上的端点与数据线熔融连通。
其中，所述修补线经过的部分像素电极通过激光与其他像素电极部分切断。
其中，所述修补线的材料为金属钨。
其中，所述保护图案延伸至所覆盖的扫描线相邻两侧的像素电极上。
其中，所述保护图案仅覆盖扫描线。
本发明所提供的线路修补结构及修补方法通过在扫描线上预设保护图案使得修补线经过扫描线时不会因激光能量过高而直接与扫描线连通而造成短路。而且所述保护图案在形成TFT的非晶硅层时一并完成不会增加制程步骤。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例所提供的线路修补结构示意图；
图2是图1的线路修补结构的保护图案结构示意图；
图3本发明第二实施例所提供的线路修补结构的保护图案结构示意图；
图4是本发明实施例所提供的线路修补方法的步骤流程图；
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1及图2所示，本发明第一实施例所提供的线路修补结构1用于修补薄膜晶体管(ThinFilmTransistor，TFT113)阵列基板11上沿不同方向延伸的电连接线在相互交叉处所形成的断路。所述线路修补结构1包括从断路点所在的电连接线同一侧延伸而出并连通断路点两端的修补线10及非晶硅保护图案12。所述修补线10穿过与断路点所在电连接线相交的另一电连接线。所述非晶硅保护图案12设置在修补线10与其所穿过的电连接线之间。在本实施方式中，所述电连接线可以为TFT113阵列基板11中的扫描线110或数据线112。
所述TFT113阵列基板11包括沿第一方向延伸的扫描线110、沿第二方向延伸的数据线112、位于扫描线110与数据线112相交处的TFT113、及与TFT113相连接的像素电极114。所述TFT113包括与扫描线110相连接的栅极115、与数据线112相连接的源极116、与像素电极114相连接的漏极117、及连接源极116与漏极117的沟道层118。当扫描线110通过栅极115选中TFT113所在的像素时，数据线112所传输的数据信号通过沟道层118传输至像素电极114上进行显示。在本实施例中，所述扫描线110与数据线112垂直相交。所述断路点出现在数据线112与扫描线110相交的地方。
所述修补线10的两端分别由数据线112上断路点的相对两侧延伸而出后穿过扫描线110相互连通。所述修补线10经过的其他像素的部分像素电极114与对应像素内的像素电极114的其他部分切断，以避免修补线10所传输的显示信号影响其他像素的显示。
所述修补线10通过激光化学气相沉积(LaserChemicalVaporDeposition)的方法将导电金属材料，比如钨，沉积在基板上而形成。所述修补线10的两端通过激光将修补线10与数据线112相互熔融导通。所述修补线10经过的部分像素电极114通过激光与其他像素电极114部分切断。
所述非晶硅保护图案12的材质为非晶硅，其可在TFT113的非晶硅光罩制程中一并制作而不需要增加额外的制程步骤。在本实施方式中，所述非晶硅保护图案12沿垂直于扫描线110方向的相对两侧分别对应延伸至与扫描线110相邻的两个像素电极114上，从而与所述像素电极114部分重叠。所述TFT113的沟道层118材料也为非晶硅材料。所以，所述非晶硅保护图案12可在形成TFT113的沟道层118时一并制成。因所述非晶硅保护图案12在形成修补线10时可以避免激光对扫描线110的破坏，所以可以很好地防止扫描线110与数据线112发生短路。
如图3所示，本发明第二实施例所提供的线路修补结构2与本发明第一实施例所提供的线路修补结构1基本相同，其区别在于：所述保护图案22沿垂直于扫描线210方向的相对两侧并不与扫描线210相邻的两个所述像素电极214有任何的重叠。
如图4所示，本发明实施例所提供的线路修补方法。所述线路修补方法用于修补薄膜晶体管(ThinFilmTransistor，TFT113)阵列基板11上沿不同方向延伸的电连接线在相互交叉处所形成的断路。所述TFT113基板包括沿第一方向延伸的扫描线110、沿第二方向延伸的数据线112、位于扫描线110与数据线112相交处的TFT113、及与TFT113相连接的像素电极114。该线路修补方法包括：
步骤S11，预设非晶硅保护图案12，请一并参阅图2，在进行非晶硅曝光工艺的同时，在扫描线110上距离扫描线110与数据线112相交处一预设值的位置处形成一非晶硅保护图案12。所述非晶硅保护图案12沿垂直于扫描线110的方向延伸并完全覆盖所述扫描线110。在本实施例中，所述非晶硅保护图案12沿垂直扫描线110的方向延伸至扫描线110相邻的两个像素电极114处，并与所述相邻像素电极114部分重叠。
请一并参阅图3，可以理解的是，在其他可替代的实施例中，所述非晶硅保护图案12并不会延伸至与扫描线110相邻的像素电极114处。
步骤S12，生长修补线10，在数据线112断点处的相对两端沿垂直于数据线112的方向朝同一侧分别通过激光化学气相沉积(LaserChemicalVaporDeposition)的方法生长出修补线10。所述断点两侧的修补线10分别沿垂直数据线112的方向生长至与非晶硅保护图案12对应的位置处转而沿垂直扫描线110的方向生长直至接通。因此，所述修补线10在经过扫描线110时与非晶硅保护图案12重叠。所述修补线10的材料为导电金属。在本实施例中，生长修补线10所采用的是金属钨。
步骤S13，切断部分像素电极114，所述修补线10在生长过程中会分别经过扫描线110相邻两侧的像素电极114。为了防止所经过的像素电极114受到修补线10所传输的显示信号的影响，将修补线10所经过的部分像素电极114与像素电极114的其他部分通过激光切断。
步骤S14，连通修补线10与数据线112，通过激光将修补线10在数据线112上的端点与数据线112熔融，让金属钨与下层数据线112连接在一起。
本实施例所提供的线路修补方法通过在扫描线110上预设非晶硅保护图案12使得修补线10经过扫描线110时不会因激光能量过高而直接与扫描线110连通而造成短路。而且所述非晶硅保护图案12在形成TFT113的非晶硅层时一并完成不会增加制程步骤。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

1.一种线路修补结构，其用于修补薄膜晶体管阵列基板(11)上沿不同方向延伸的电连接线在相互交叉处所形成的断路，所述薄膜晶体管阵列基板(11)包括沿第一方向延伸的扫描线(110)、沿第二方向延伸的数据线(112)、位于扫描线(110)与数据线(112)相交处的TFT(113)、及与TFT(113)相连接的像素电极(114)，所述线路修补结构包括从断路点所在的电连接线朝同一侧延伸而出并连通断路点两端的修补线(10)及非晶硅保护图案(12)，所述修补线(10)穿过与断路点所在电连接线相交的另一电连接线，所述非晶硅保护图案(12)设置在修补线(10)与修补线(10)所穿过的电连接线之间；
所述非晶硅保护图案(12)是在进行非晶硅曝光工艺时预设在电连接线上的。
2.如权利要求1所述的线路修补结构，其特征在于，所述修补线(10)经过的其他像素的部分像素电极(114)与对应像素内的像素电极(114)的其他部分切断。
3.如权利要求1所述的线路修补结构，其特征在于，所述非晶硅保护图案(12)延伸至所覆盖的电连接线相邻两侧的像素电极(114)上。
4.如权利要求1所述的线路修补结构，其特征在于，所述非晶硅保护图案(12)仅覆盖与断路点所在电连接线相交的另一电连接线。
5.如权利要求1所述的线路修补结构，其特征在于，所述修补线(10)通过激光化学气相沉积的方法将导电金属材料沉积在基板上而形成，所述修补线(10)的两端通过激光将修补线(10)与数据线(112)相互熔融导通。
6.一种线路修补方法，所述线路修补方法用于修补薄膜晶体管阵列基板(11)上沿不同方向延伸的扫描线(110)与数据线(112)在相互交叉处所形成的断路，所述薄膜晶体管阵列基板(11)包括沿第一方向延伸的扫描线(110)、沿第二方向延伸的数据线(112)、位于扫描线(110)与数据线(112)相交处的TFT(113)、及与TFT(113)相连接的像素电极(114)，该线路修补方法包括：
在进行非晶硅曝光工艺的同时，在扫描线(110)上距离扫描线(110)与数据线(112)相交处一预设值的位置处形成一非晶硅保护图案(12)；
在数据线(112)断点处的相对两端分别生长出修补线(10)并相互连通；
切断修补线(10)所经过的像素电极(114)部分与对应像素的像素电极(114)的其他部分；
通过激光将修补线(10)在数据线(112)上的端点与数据线(112)熔融连通。
7.如权利要求6所述的线路修补方法，其特征在于，所述修补线(10)经过的部分像素电极(114)通过激光与其他像素电极(114)部分切断。
8.如权利要求6所述的线路修补方法，其特征在于，所述修补线(10)的材料为金属钨。
9.如权利要求6所述的线路修补方法，其特征在于，所述保护图案(12)延伸至所覆盖的扫描线(110)相邻两侧的像素电极(114)上。
10.如权利要求6所述的线路修补方法，其特征在于，所述保护图案(12)仅覆盖扫描线(110)。
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