CN109240006A - 断线修复方法 - Google Patents
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Abstract
本申请提供一种断线修复方法,包括如下步骤:提供一阵列基板,其在信号扇出区内具有断裂的导线,导线上覆盖有第一绝缘层及透明导电层;在导线的断裂处的两端分别开设第一过孔和第二过孔;形成修复线,通过第一过孔及第二过孔连接导线的断裂处的两端;以及在透明导电层上形成封闭环形开口,修复线位于封闭环形开口包围的区域内。修复线与相邻导线对应的透明导电层电性接触的部分仅局限于封闭环形开口内,降低对相邻导线携载的电信号的影响。
Description
技术领域
本申请涉及一种显示技术,特别涉及一种断线修复方法。
背景技术
液晶显示面板(liquid crystal display panel)的制造工艺一般包括阵列(array)制程、成盒(cell)制程(薄膜晶体管基板与彩膜基板贴合)及模组组装制程。在阵列制程过程中经常会出现断线缺陷,针对扫描线和数据线延伸到非显示区的信号扇出区上的断线缺陷,现有技术通常沿用显示区上的断线修补技术来修补信号扇出区上的断线缺陷。
如图1和图2所示,现有的断线修补方法为:在导线14断裂处14a的两端的绝缘层16及透明导电层18上分别开设两过孔19a及19b,接着形成修复线15,修复线15的材料填入两过孔19a及19b中,修复线15通过两过孔19a及19b连接断裂处14a两端,使得断线的导线14被修复。现有的断线修补方法中,由于修复线15与导线14上方的透明导电层18与相邻导线上方的透明导电层电性接触,造成其携载的电信号强度衰减,这可能使得扫描驱动不足,或数据信号电压不足而在显示萤幕上呈现淡线。具体来说,现有的断线修补方法存在以下问题:
(1)导线的修复线与导线对应的透明导电层电性接触,且导线14对应的透明导电层与相邻导线对应的透明导电层形成短路(short),由于受到透明导电层电位变化的影响,导致导线及相邻导线携载的电信号不良。
(2)在两相邻导线携载的电信号(如数据信号)极性相反的情况下,因修复线与相邻导线对应的透明导电层电性接触,故修复线与相邻导线对应的透明导电层的电信号极性相同,相邻导线与其对应的透明导电层的电信号极性相反,故两者之间容易产生寄生电容,造成相邻导线信号衰减。
发明内容
本申请的目的在于提供一种断线修复方法,以降低对相邻导线携载的电信号的影响,进而有效解决相邻导线的信号衰减问题。
为实现上述目的,本申请提供一种断线修复方法,包括如下步骤:
步骤S1、提供一阵列基板,所述阵列基板在信号扇出区内具有断裂的导线,所述导线上覆盖有第一绝缘层,所述第一绝缘层上覆盖有透明导电层;
步骤S2、在所述导线的断裂处的两端的第一绝缘层及透明导电层上分别开设第一过孔和第二过孔,所述第一过孔和第二过孔均暴露出其下方的导线;
步骤S3、形成修复线,所述修复线的一端通过所述第一过孔与所述导线的断裂处的一端相连,所述修复线的另一端通过所述第二过孔与所述导线的断裂处的另一端相连;以及
步骤S4、移除部分所述透明导电层,以在所述透明导电层上形成封闭环形开口,所述修复线位于所述封闭环形开口包围的区域内。
根据本申请实施例,所述步骤S1中,所述第一绝缘层的材料是选自由氧化硅和氮化硅组成的群组。
根据本申请实施例,所述步骤S1中,所述透明导电层的材料包括氧化铟锡。
根据本申请实施例,所述步骤S2中,利用激光打孔形成所述第一过孔和所述第二过孔。
根据本申请实施例,所述步骤S3中,所述修复线的材料是选自由钨和钼组成的群组。
根据本申请实施例,所述步骤S3中,所述修复线是通过激光长线而形成。
根据本申请实施例,所述步骤S4中,所述封闭环形开口包围的区域并包括所述导线的断裂处、所述第一过孔及所述第二过孔。
根据本申请实施例,所述步骤S4中,所述封闭环形开口是通过蚀刻方式移除部分所述透明导电层而形成。
根据本申请实施例,所述导线为所述阵列基板中的扫描线或数据线在所述信号扇出区的延伸线。
根据本申请实施例,所述阵列基板上还设有第二绝缘层,所述导线形成于所述第二绝缘层上。
本发明的有益效果:
本申请提供一种断线修复方法,包括如下步骤:提供一阵列基板,所述阵列基板在信号扇出区内具有断裂的导线,所述导线上覆盖有第一绝缘层,所述第一绝缘层上覆盖有透明导电层;在所述导线的断裂处的两端的第一绝缘层及透明导电层上分别开设第一过孔和第二过孔,所述第一过孔和第二过孔均暴露出其下方的导线;形成修复线,所述修复线的一端通过所述第一过孔与所述导线的断裂处的一端相连,所述修复线的另一端通过所述第二过孔与所述导线的断裂处的另一端相连;以及移除部分所述透明导电层,以在所述透明导电层上形成封闭环形开口,所述修复线位于所述封闭环形开口包围的区域内。通过在透明导电层上形成封闭环形开口,修复线与相邻导线对应的透明导电层电性接触的部分仅局限于封闭环形开口内,降低对相邻导线携载的电信号的影响,进而有效解决相邻导线的信号衰减问题。
附图说明
为让本申请的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下。
图1为现有的断线修复的俯视图;
图2为图1中A-A处的剖视图;
图3为本申请的断线修复的俯视图;
图4为图3中B-B处的剖视图;
图5为本申请的断线修复方法的流程图。
具体实施方式
为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,本申请说明书所使用的词语“实施例”意指用作实例、示例或例证,并不用于限定本申请。
请参阅图5,本申请提供一种断线修复方法,包括如下步骤:
步骤S1、请参阅图3及图4,提供一阵列基板20,阵列基板20在信号扇出区(fanoutarea)内具有断裂的导线24,导线24上覆盖有第一绝缘层26,所述第一绝缘层26上覆盖有透明导电层28。
具体地,阵列基板20上在显示区或主动区(active area,AA)形成有用于携载扫描信号的扫描线及用于携载数据信号的数据线,扫描线在非显示区延伸到扫描驱动电路的延伸线构成信号扇出区,数据线在非显示区延伸到数据驱动电路的延伸线构成信号扇出区。导线20可为阵列基板20中的扫描线或数据线在信号扇出区的延伸线。
图3中以虚线示出的导线24表示位于透明导电层28的下方。从图3及图4可以看出,导线24位于第一绝缘层26和透明导电层28的下方。
具体地,阵列基板20上还设有第二绝缘层22,导线24形成于第二绝缘层22上。
具体地,常见的阵列基板20的结构包括:衬底基板、在所述衬底基板上的衬底绝缘层、设于所述衬底绝缘层上的薄膜晶体管(thin-film transistor,TFT)层、覆盖所述TFT层的钝化层及设于所述钝化层上的像素电极,其中TFT层包括:第一金属层、第二金属层及位于所述第一金属层和第二金属层之间的栅极绝缘层,其中第一金属层中设有栅极及与所述栅极电性连接的扫描线,第二金属层设有源极、漏极及与所述源极电性连接的数据线,当然完整的TFT层还包括半导体层,该半导体层可以位于所述栅极的上方或位于所述栅极的下方。
具体地,当信号扇出区中断裂的导线24为扫描线的延伸线时,第一绝缘层26包括钝化层及栅极绝缘层的层叠,第二绝缘层22包括衬底绝缘层;当信号扇出区中断裂的导线24为数据线的延伸线时,第一绝缘层26包括钝化层,第二绝缘层22包括栅极绝缘层和衬底绝缘层的层叠。
导线24的材料为铝和钼中的一种或二者的组合。较佳地,所述导线24为两层钼夹一层铝的结构。第一绝缘层26和第二绝缘层22的材料可为氧化硅或氮化硅。透明导电层28的材料可为氧化铟锡。
步骤S2、在导线24的断裂处24a的两端的第一绝缘层26及透明导电层28上分别开设第一过孔29a和第二过孔29b,第一过孔29a和第二过孔29b均暴露出其下方的导线24。
具体地,如图4所示并参阅图3,在步骤S2中,利用激光打孔去除导线24的断裂处24a的两端的第一绝缘层26及透明导电层28,以形成第一过孔29a和第二过孔29b。第一过孔29a和第二过孔29b在后续修复线25的形成过程中被填充了修复线25材料。
步骤S3、形成修复线25,修复线25的一端通过第一过孔29a与导线24的断裂处24a的一端相连,修复线25的另一端通过第二过孔29b与导线24的断裂处24a的另一端相连。
具体地,第一过孔29a和第二过孔29b均被填充了修复线25材料,因此修复线25电性连接导线24的断裂处24a的两端,使得修复后的导线可被电性导通,而不造成断路。
具体地,修复线25可为U型修复线,其两端分别连接导线24断裂处24a的两端。步骤S3中,可通过激光长线的方法形成修复线25。较佳地,修复线25的材料为钨或钼。
步骤S4、移除部分透明导电层28,以在透明导电层28上形成封闭环形开口28a,修复线25位于封闭环形开口28a包围的区域内。
具体地,如图4所示,封闭环形开口28a本身不具有透明导电物质,透明导电物质保留在封闭环形开口28a的外侧及内侧。封闭环形开口28a包围的区域包括修复线25,还包括导线24的断裂处24a、第一过孔29a及第二过孔29b。
较佳地,封闭环形开口28a可为矩形封闭开口。
具体地,封闭环形开口28a可通过图案化透明导电层28而形成。较佳地,封闭环形开口28a是通过蚀刻方式移除部分透明导电层28而形成。例如,可通过曝光显影制程移除部分透明导电层28来形成封闭环形开口28a。
需要说明的是,如图3及图4所示,修复线与相邻导线对应的透明导电层电性接触的部分仅局限于封闭环形开口内,也就是说,修复线携载的电信号仅影响封闭环形开口内相邻导线对应的透明导电层,而不至于扩散到封闭环形开口外,造成相邻导线携载的电信号(如扫描信号和数据信号)不良。
进一步地,在两相邻导线携载的电信号(如数据信号)极性相反的情况下,因修复线与相邻导线对应的透明导电层电性接触,故修复线与相邻导线对应的透明导电层的电信号极性相同,相邻导线与其对应的透明导电层的电信号极性相反,故两者之间容易产生寄生电容。但由于修复线与相邻导线对应的透明导电层电性接触的部分仅局限于封闭环形开口内,有效降低了相邻导线与其对应之透明导电层间生成的寄生电容,因此能够有效解决相邻导线的信号衰减问题。
综上所述,本申请提供一种断线修复方法,包括如下步骤:提供一阵列基板,所述阵列基板在信号扇出区内具有断裂的导线,所述导线上覆盖有第一绝缘层,所述第一绝缘层上覆盖有透明导电层;在所述导线的断裂处的两端的第一绝缘层及透明导电层上分别开设第一过孔和第二过孔,所述第一过孔和第二过孔均暴露出其下方的导线;形成修复线,所述修复线的一端通过所述第一过孔与所述导线的断裂处的一端相连,所述修复线的另一端通过所述第二过孔与所述导线的断裂处的另一端相连;以及移除部分所述透明导电层,以在所述透明导电层上形成封闭环形开口,所述修复线位于所述封闭环形开口包围的区域内。通过在透明导电层上形成封闭环形开口,修复线与相邻导线对应的透明导电层电性接触的部分仅局限于封闭环形开口内,降低对相邻导线携载的电信号的影响,进而有效解决相邻导线的信号衰减问题。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种断线修复方法,其特征在于,包括如下步骤:
步骤S1、提供一阵列基板,所述阵列基板在信号扇出区内具有断裂的导线,所述导线上覆盖有第一绝缘层,所述第一绝缘层上覆盖有透明导电层;
步骤S2、在所述导线的断裂处的两端的第一绝缘层及透明导电层上分别开设第一过孔和第二过孔,所述第一过孔和第二过孔均暴露出其下方的导线;
步骤S3、形成修复线,所述修复线的一端通过所述第一过孔与所述导线的断裂处的一端相连,所述修复线的另一端通过所述第二过孔与所述导线的断裂处的另一端相连;以及
步骤S4、移除部分所述透明导电层,以在所述透明导电层上形成封闭环形开口,所述修复线位于所述封闭环形开口包围的区域内。
2.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S1中,所述第一绝缘层的材料是选自由氧化硅和氮化硅组成的群组。
3.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S1中,所述透明导电层的材料包括氧化铟锡。
4.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S2中,利用激光打孔形成所述第一过孔和所述第二过孔。
5.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S3中,所述修复线的材料是选自由钨和钼组成的群组。
6.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S3中,所述修复线是通过激光长线而形成。
7.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S4中,所述封闭环形开口包围的区域并包括所述导线的断裂处、所述第一过孔及所述第二过孔。
8.根据权利要求1所述的断线修复方法,其特征在于:所述步骤S4中,所述封闭环形开口是通过蚀刻方式移除部分所述透明导电层而形成。
9.根据权利要求1所述的断线修复方法,其特征在于:所述导线为所述阵列基板中的扫描线或数据线在所述信号扇出区的延伸线。
10.根据权利要求1所述的断线修复方法,其特征在于:所述阵列基板上还设有第二绝缘层,所述导线形成于所述第二绝缘层上。
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