WO2014000246A1 - 一种石墨烯薄膜及其制备方法和用途 - Google Patents
一种石墨烯薄膜及其制备方法和用途 Download PDFInfo
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- WO2014000246A1 WO2014000246A1 PCT/CN2012/077843 CN2012077843W WO2014000246A1 WO 2014000246 A1 WO2014000246 A1 WO 2014000246A1 CN 2012077843 W CN2012077843 W CN 2012077843W WO 2014000246 A1 WO2014000246 A1 WO 2014000246A1
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- graphene
- graphene film
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- suspension
- film according
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 135
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000725 suspension Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002243 precursor Substances 0.000 claims abstract description 17
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229920002873 Polyethylenimine Polymers 0.000 claims description 10
- 239000012153 distilled water Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000004743 Polypropylene Substances 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- -1 polypropylene Polymers 0.000 claims description 7
- 229920001155 polypropylene Polymers 0.000 claims description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229920000515 polycarbonate Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003093 cationic surfactant Substances 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 1
- 238000001035 drying Methods 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 5
- 238000001132 ultrasonic dispersion Methods 0.000 description 5
- 238000001291 vacuum drying Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005492 condensed matter physics Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical group [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/68—Current collectors characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/663—Selection of materials containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Definitions
- the invention relates to the field of new material synthesis, in particular to a graphene film and a preparation method and use thereof.
- the current collector is a structure or component that collects current. Its main function is to collect the current generated by the active material of the battery, provide an electron channel, accelerate the charge transfer, improve the coulombic efficiency of the charge and discharge, and satisfy the high conductivity and mechanical properties as a current collector. Good, light weight, small internal resistance and so on.
- Graphene is a two-dimensional carbon atom crystal discovered by Andre K. Geim of the University of Manchester in 2004. Due to its unique structure and optoelectronic properties, it has become a research hotspot in the fields of carbon materials, nanotechnology, condensed matter physics and functional materials, attracting many scientific and technological workers.
- Single-layer graphene has excellent electrical and thermal conductivity and low coefficient of thermal expansion, and its theoretical specific surface area is as high as 2630 m 2 /g (A Peigney, Ch Laurent, et al. Carbon, 2001, 39, 507 ), which can be used for effect transistors. , electrode materials, composite materials, liquid crystal display materials, sensors, etc.
- Graphene can be prepared into a graphene film by a certain method. Since the specific surface area of graphene is large and its density is low, the graphene film is light in weight, and has high mechanical properties and high electrical conductivity. Basic performance metrics for energy harvesting applications.
- the preparation method of the graphene film is mainly a filtration method and a spin coating method, wherein the filtration method takes a long time and has low efficiency, and the graphene film prepared by the spin coating method is generally thin and not uniform.
- the present invention aims to provide a graphene film and a preparation method and use thereof, which are highly conductive and light in weight, and can be applied as a current collector in a supercapacitor and a lithium ion battery, thereby reducing
- the weight of the current collector solves the problem of low energy density existing in the existing energy storage device, and greatly increases the energy density of the supercapacitor and the lithium ion battery, and the preparation method thereof is simple.
- the present invention provides a method for preparing a graphene film, comprising the steps of:
- the graphene and the cationic surfactant are ultrasonically dispersed in a solvent to obtain a graphene suspension having a positive charge on the surface;
- the material of the substrate is polypropylene (PP), polymethyl methacrylate (PMMA), polycarbonate (PC) , polyethylene (PE), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN).
- PP polypropylene
- PMMA polymethyl methacrylate
- PC polycarbonate
- PE polyethylene
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- the substrate decomposes at a high temperature of 500 to 1000 ° C, is easily removed, and is detached from the graphene film.
- the cut substrate is sequentially placed in acetone, ethanol, and secondary water for 20 minutes. After the treatment is clean, rinse with a large amount of secondary water and blow dry with nitrogen.
- the surface positive charge treatment is performed by immersing the substrate in a 1 to 5 g/L aqueous solution of polyethyleneimine for 10 to 30 minutes. Wash out after taking out and blow dry with nitrogen.
- the strong acid mixture is a concentrated sulfuric acid and concentrated nitric acid mixture having a volume ratio of 1 to 3:1.
- the drying is carried out under vacuum at 50 to 80 ° C for 12 to 24 hours.
- the surface of the negatively charged graphene suspension has a concentration of 0.1 to 5 mg/mL.
- the ultrasonic dispersion time is from 1 to 5 hours.
- the concentration of the positively charged graphene suspension on the surface is 0.1 to 5 mg/mL.
- the solvent is distilled water, ethanol, methanol or isopropanol.
- the cationic surfactant is an ethanolammonium salt or a quaternary ammonium salt.
- the cationic surfactant is a quaternary ammonium salt.
- the ethanolic ammonium salt is diethanolamine or triethanolamine.
- the quaternary ammonium salt is dodecyltrimethylammonium chloride.
- the substrate with a positive charge on the surface after treatment is immersed in a negatively charged graphene suspension on the surface, and the negatively charged graphene is attached to the substrate by electrostatic attraction, and the surface of the substrate is excessively negatively charged. After being dried, it is immersed in the graphene suspension with positive charge on the surface, and further, the positively charged graphene on the surface is attached to the substrate by electrostatic attraction, washed, and dried to obtain a single layer. Structure of graphene film precursor.
- the graphene film prepared by electrostatic attraction has a more uniform thickness, a more regular arrangement, and a higher electrical conductivity.
- the operation of immersing the above-described negatively charged graphene suspension on the surface and the operation of immersing in the surface-charged graphene suspension are alternately repeated a plurality of times to obtain a graphene film precursor having a multilayer structure. Therefore, effective control of the thickness of the graphene film can be achieved.
- the surface of the prepared graphene film precursor is excessively positively charged, so that it needs to be reduced at a high temperature to obtain a graphene film.
- the substrate decomposes under high temperature heating and is detached from the product graphene film.
- the specific operation of the graphene film precursor reduction is as follows: the graphene film precursor is placed in a tube furnace, an inert gas is introduced, and the flow rate of the inert gas is controlled to be 50 to 70 mL/min to 5 to 10 ° C / Min The temperature is raised to 500 ⁇ 1000 °C, and a mixed gas of inert gas and hydrogen is introduced, and the mixture is reduced for 0.5 to 2 hours, cooled to room temperature, and washed with water to obtain a graphene film.
- the inert gas is one or more of nitrogen, argon or helium.
- the volume fraction of hydrogen in the mixed gas of the inert gas and the hydrogen gas is 5 to 10%.
- the present invention provides a graphene film which is prepared by the above method.
- the thickness of the graphene film is 0.2 ⁇ 1 ⁇ m.
- the present invention also provides the use of a graphene film as a current collector in a supercapacitor and a lithium ion battery.
- the graphene film can be used as a positive or negative current collector for supercapacitors and lithium ion batteries. Can greatly improve the energy density of supercapacitors and lithium-ion batteries.
- Fig. 1 is a SEM image showing a cross section of a graphene film obtained in Example 1 of the present invention.
- a method for preparing a graphene film comprising the following steps:
- the cut PP will be The substrate was sonicated in acetone, ethanol and secondary water for 20 min. After being cleaned, rinsed with a large amount of secondary water, dried with nitrogen, and then immersed in a 1 g / L polyethyleneimine (PEI) aqueous solution. The surface was subjected to surface charge treatment for 30 minutes, taken out, rinsed with secondary water and blown dry with nitrogen to obtain a PP substrate having a positively charged surface.
- PEI polyethyleneimine
- the obtained graphene film precursor is placed in a tube furnace, argon gas is introduced to drive off the air in the furnace, and then the flow rate of the argon gas is controlled to 50 mL/min, and the temperature is gradually increased at a temperature rising rate of 5 ° C /min to 500 At this time, a mixed gas of argon gas and hydrogen gas (hydrogen volume content 5%) was introduced, and the mixture was reduced at this temperature for 0.5 h to decompose the PP substrate, and the temperature was lowered to room temperature, and the surface was washed with water to obtain a graphene film.
- argon gas is introduced to drive off the air in the furnace, and then the flow rate of the argon gas is controlled to 50 mL/min, and the temperature is gradually increased at a temperature rising rate of 5 ° C /min to 500
- a mixed gas of argon gas and hydrogen gas hydrogen volume content 5%
- the graphene film obtained in this example had a thickness of 1 ⁇ m.
- FIG. 1 is a SEM image showing a cross section of a graphene film obtained in Example 1 of the present invention. From Figure 1 It can be seen that the graphene film has been successfully prepared, and the cross-sectional arrangement of the graphene film is relatively regular, indicating that the graphene film is relatively uniform.
- a method for preparing a graphene film comprising the following steps:
- the cut PC will be The substrate was sonicated in acetone, ethanol and secondary water for 20 min. After being cleaned, rinsed with a large amount of secondary water, dried with nitrogen, and then immersed in a 1 g / L polyethyleneimine (PEI) aqueous solution. The surface was subjected to surface charge treatment for 30 minutes, taken out, rinsed with secondary water and blown dry with nitrogen to obtain a PC substrate having a positively charged surface.
- PEI polyethyleneimine
- the obtained graphene film precursor is placed in a tube furnace, nitrogen is introduced to remove the air in the furnace, and then the flow rate of the nitrogen gas is controlled to be 50 mL/min, and the temperature is gradually raised to 500 at a heating rate of 5 ° C /min.
- a mixed gas of nitrogen and hydrogen hydrogen volume 5% was introduced, and the mixture was reduced at this temperature for 0.5 h to decompose the PC substrate, and the temperature was lowered to room temperature, and the surface was washed with water to obtain a graphene film.
- the graphene film obtained in this example had a thickness of 0.6 ⁇ m.
- a method for preparing a graphene film comprising the following steps:
- the cut PMMA will be The substrate was sequentially sonicated in acetone, ethanol and secondary water for 20 min. After being cleaned, it was rinsed with a large amount of secondary water, dried with nitrogen, and then immersed in a 3 g / L polyethyleneimine (PEI) aqueous solution. The surface was subjected to surface charge treatment at 20 min, taken out, rinsed with secondary water and blown dry with nitrogen to obtain a PMMA substrate having a positively charged surface.
- PEI polyethyleneimine
- the obtained graphene film precursor is placed in a tube furnace, and the helium gas is introduced to remove the air in the furnace, and then the flow rate of the helium gas is controlled to be 60 mL/min, and the temperature is gradually increased at a heating rate of 5 ° C /min to 800 °C, at this time, a mixture of helium and hydrogen (10% hydrogen volume) is introduced, and the mixture is reduced at this temperature for 1 hour, the PMMA substrate is decomposed, the temperature is lowered to room temperature, and the surface is washed with water to obtain a graphene film.
- the graphene film obtained in this example had a thickness of 0.4 ⁇ m.
- a method for preparing a graphene film comprising the following steps:
- the cut PET will be The substrate was sequentially sonicated in acetone, ethanol and secondary water for 20 min. After being cleaned, it was rinsed with a large amount of secondary water, dried with nitrogen, and then immersed in a 5 g / L polyethyleneimine (PEI) aqueous solution. After 10 min of surface charge treatment, it was taken out, rinsed with secondary water and blown dry with nitrogen to obtain a PET substrate having a positively charged surface.
- PEI polyethyleneimine
- the obtained graphene film precursor is placed in a tube furnace, argon gas is introduced to drive off the air in the furnace, and then the flow rate of the argon gas is controlled to be 70 mL/min, and the temperature is gradually raised at a heating rate of 5 ° C /min to At 1000 °C, a mixture of argon and hydrogen (hydrogen volume 8%) is introduced at this temperature for 2 h to decompose PET.
- the substrate was cooled to room temperature, and the surface was washed with water to obtain a graphene film.
- the graphene film obtained in this example had a thickness of 0.2 ⁇ m.
- Example 1 2 3 4 Conductivity 10 4 S/m 1.54 1.46 1.28 1.13
- the graphene film prepared by the preparation method of the invention has good mechanical properties, uniform thickness, strong electrical conductivity, light weight, easy thickness control, high stability and corrosion resistance, and can be used as a current collector of lithium ion batteries and super capacitors to reduce storage.
- the quality of the device can greatly increase the energy density of the energy storage device while increasing its service life.
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Carbon And Carbon Compounds (AREA)
- Battery Electrode And Active Subsutance (AREA)
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- Non-Insulated Conductors (AREA)
Abstract
Description
实施例 | 1 | 2 | 3 | 4 |
电导率 104S/m | 1.54 | 1.46 | 1.28 | 1.13 |
Claims (10)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12879617.4A EP2868627A4 (en) | 2012-06-29 | 2012-06-29 | GRAPHIC FILM, MANUFACTURING METHOD APPLYING THEREOF |
US14/400,788 US20150125758A1 (en) | 2012-06-29 | 2012-06-29 | Graphene film, preparation method and application thereof |
CN201280072979.2A CN104271500B (zh) | 2012-06-29 | 2012-06-29 | 一种石墨烯薄膜及其制备方法和用途 |
JP2015518762A JP5951896B2 (ja) | 2012-06-29 | 2012-06-29 | グラフェンフィルム、並びにその製造方法及び使用 |
PCT/CN2012/077843 WO2014000246A1 (zh) | 2012-06-29 | 2012-06-29 | 一种石墨烯薄膜及其制备方法和用途 |
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PCT/CN2012/077843 WO2014000246A1 (zh) | 2012-06-29 | 2012-06-29 | 一种石墨烯薄膜及其制备方法和用途 |
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WO2014000246A1 true WO2014000246A1 (zh) | 2014-01-03 |
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Country Status (5)
Country | Link |
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US (1) | US20150125758A1 (zh) |
EP (1) | EP2868627A4 (zh) |
JP (1) | JP5951896B2 (zh) |
CN (1) | CN104271500B (zh) |
WO (1) | WO2014000246A1 (zh) |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070284557A1 (en) * | 2006-06-13 | 2007-12-13 | Unidym, Inc. | Graphene film as transparent and electrically conducting material |
CN101559944A (zh) * | 2009-05-27 | 2009-10-21 | 天津大学 | 导电石墨烯膜及其自组装制备方法 |
CN102021633A (zh) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | 一种石墨烯薄膜场发射材料的制备方法 |
CN102509634A (zh) * | 2011-10-31 | 2012-06-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种石墨烯基柔性多层复合膜及其制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60135094D1 (de) * | 2000-02-25 | 2008-09-11 | Hydro Quebec | Reinigung der oberfläche von natürlichem graphit und einfluss der verunreinigungen auf das mahlen und die teilchengrösseverteilung |
JP2003205568A (ja) * | 2002-01-11 | 2003-07-22 | Dainippon Printing Co Ltd | ナノ粒子層積層体 |
US7951426B2 (en) * | 2006-12-13 | 2011-05-31 | Guardian Industries Corp. | Hydrophilic coating and method of making same |
US9105403B2 (en) * | 2008-01-14 | 2015-08-11 | The Regents Of The University Of California | High-throughput solution processing of large scale graphene and device applications |
JP4973569B2 (ja) * | 2008-03-28 | 2012-07-11 | 株式会社豊田中央研究所 | 繊維状炭素系材料絶縁物、それを含む樹脂複合材、および繊維状炭素系材料絶縁物の製造方法 |
WO2009129194A2 (en) * | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
US8614466B2 (en) * | 2008-11-18 | 2013-12-24 | The United States Of America, As Represented By The Secretary, Department Of Health And Human Services | Semiconductor for measuring biological interactions |
WO2010069797A1 (en) * | 2008-12-18 | 2010-06-24 | Basf Se | Electrochromic films prepared by supramolecular self-assembly |
US20100239871A1 (en) * | 2008-12-19 | 2010-09-23 | Vorbeck Materials Corp. | One-part polysiloxane inks and coatings and method of adhering the same to a substrate |
CN101474898A (zh) * | 2009-01-16 | 2009-07-08 | 南开大学 | 基于石墨烯的导电碳膜及制备方法和应用 |
CN101702345B (zh) * | 2009-11-27 | 2011-08-03 | 南京邮电大学 | 一种叠层石墨烯导电薄膜的制备方法 |
US8920682B2 (en) * | 2010-03-19 | 2014-12-30 | Eastern Michigan University | Nanoparticle dispersions with ionic liquid-based stabilizers |
KR101244058B1 (ko) * | 2010-04-15 | 2013-03-18 | 국립대학법인 울산과학기술대학교 산학협력단 | 층상 자기조립법을 이용한 그래핀 투명 박막의 제조방법 |
JP2013538933A (ja) * | 2010-05-14 | 2013-10-17 | ビーエーエスエフ ソシエタス・ヨーロピア | グラフェンで金属と金属酸化物をカプセル化する方法とこれらの材料の使用方法 |
JP5499980B2 (ja) * | 2010-08-02 | 2014-05-21 | 富士電機株式会社 | グラフェン薄膜の製造方法 |
EP2439779B1 (en) * | 2010-10-05 | 2014-05-07 | Samsung Electronics Co., Ltd. | Transparent Electrode Comprising Doped Graphene, Process of Preparing the Same, and Display Device and Solar Cell Comprising the Electrode |
CN102180439B (zh) * | 2011-03-31 | 2013-05-22 | 华中科技大学 | 一种表面集成石墨烯的碳微结构及其制备方法 |
KR101978726B1 (ko) * | 2011-06-03 | 2019-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제작 방법 |
US9385397B2 (en) * | 2011-08-19 | 2016-07-05 | Nanotek Instruments, Inc. | Prelithiated current collector and secondary lithium cells containing same |
US9070932B2 (en) * | 2011-10-11 | 2015-06-30 | Massachusetts Institute Of Technology | Carbon electrodes |
-
2012
- 2012-06-29 EP EP12879617.4A patent/EP2868627A4/en not_active Withdrawn
- 2012-06-29 WO PCT/CN2012/077843 patent/WO2014000246A1/zh active Application Filing
- 2012-06-29 JP JP2015518762A patent/JP5951896B2/ja active Active
- 2012-06-29 CN CN201280072979.2A patent/CN104271500B/zh active Active
- 2012-06-29 US US14/400,788 patent/US20150125758A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070284557A1 (en) * | 2006-06-13 | 2007-12-13 | Unidym, Inc. | Graphene film as transparent and electrically conducting material |
CN101559944A (zh) * | 2009-05-27 | 2009-10-21 | 天津大学 | 导电石墨烯膜及其自组装制备方法 |
CN102021633A (zh) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | 一种石墨烯薄膜场发射材料的制备方法 |
CN102509634A (zh) * | 2011-10-31 | 2012-06-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种石墨烯基柔性多层复合膜及其制备方法 |
Non-Patent Citations (2)
Title |
---|
CH LAURENT ET AL., CARBON, vol. 39, 2001, pages 507 |
See also references of EP2868627A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10050240B2 (en) | 2015-11-17 | 2018-08-14 | Samsung Electronics Co., Ltd. | Electrochemical cell |
CN109830675A (zh) * | 2019-04-04 | 2019-05-31 | 兰州理工大学 | 用于锂离子电池负极的MXene/MoS2复合材料制备方法 |
CN109830675B (zh) * | 2019-04-04 | 2021-10-08 | 兰州理工大学 | 用于锂离子电池负极的MXene/MoS2复合材料制备方法 |
Also Published As
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CN104271500A (zh) | 2015-01-07 |
US20150125758A1 (en) | 2015-05-07 |
JP5951896B2 (ja) | 2016-07-13 |
EP2868627A1 (en) | 2015-05-06 |
CN104271500B (zh) | 2016-10-26 |
JP2015527961A (ja) | 2015-09-24 |
EP2868627A4 (en) | 2016-03-23 |
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