WO2013191288A1 - 回路基板およびこれを備える電子装置 - Google Patents
回路基板およびこれを備える電子装置 Download PDFInfo
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- WO2013191288A1 WO2013191288A1 PCT/JP2013/067140 JP2013067140W WO2013191288A1 WO 2013191288 A1 WO2013191288 A1 WO 2013191288A1 JP 2013067140 W JP2013067140 W JP 2013067140W WO 2013191288 A1 WO2013191288 A1 WO 2013191288A1
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- circuit board
- sintered body
- glass layer
- metal wiring
- wiring layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/10—Glass interlayers, e.g. frit or flux
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/55—Pre-treatments of a coated or not coated substrate other than oxidation treatment in order to form an active joining layer
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/59—Aspects relating to the structure of the interlayer
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- C—CHEMISTRY; METALLURGY
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10439—Position of a single component
- H05K2201/10462—Flat component oriented parallel to the PCB surface
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2063—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10 mixed adhesion layer containing metallic/inorganic and polymeric materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a circuit board and an electronic device in which electronic components are mounted on the circuit board.
- a circuit board used for mounting various electronic components such as a semiconductor element, a heating element, and a Peltier element is provided with a metal wiring layer on at least one main surface of the ceramic sintered body, and on the metal wiring layer of the circuit board.
- Electronic devices in which electronic components are mounted via electrode pads or the like are used in various devices.
- Such a circuit board is required to have less peeling of the metal wiring layer from the ceramic sintered body due to heat generated during operation of the mounted electronic component. Therefore, adhesion between the ceramic sintered body and the metal wiring layer is achieved by including glass in the paste that forms the metal wiring layer provided on at least one main surface of the ceramic sintered body and providing the metal wiring layer through the glass layer. The strength is improved.
- Patent Document 1 discloses a copper conductor paste formed by containing at least a conductive powder mainly composed of copper powder, a glass frit, and an organic vehicle.
- a glass frit in a nitrogen atmosphere at 900 ° C., A zinc borosilicate glass frit having a contact angle of 60 ° or less and a softening point of 700 ° C. or less and a 10% by mass sulfuric acid at 25 ° C. with respect to a film formed of copper powder whose surface is not oxidized substantially.
- a copper conductor paste containing at least a borosilicate glass frit having a solubility in an aqueous solution of 1 mg / cm 2 ⁇ hr or less and a softening point of 700 ° C. or less has been proposed.
- the present invention has been devised to satisfy the above-described requirements, and provides a highly reliable circuit board that can be used for a long period of time and an electronic device in which electronic components are mounted on the circuit board.
- the circuit board of the present invention comprises a metal wiring layer on at least one main surface of the ceramic sintered body via a glass layer, and when the cross section perpendicular to the main surface of the ceramic sintered body is viewed.
- the ratio of the interface length between the glass layer and the metal wiring layer to the length of the glass layer in the direction along the main surface is 1.25 or more and 1.80 or less.
- the electronic device of the present invention is characterized in that an electronic component is mounted on the circuit board of the present invention having the above-described configuration.
- the circuit board of the present invention has excellent heat dissipation characteristics, and the metal wiring layer may be peeled off from the ceramic sintered body during the operation of the electronic component or by the thermal cycle when this operation and non-operation are repeated. It is possible to provide a highly reliable circuit board that can be used over a long period of time.
- a highly reliable electronic device that can be used for a long period of time can be obtained by mounting the electronic component on the highly reliable circuit board having the above-described configuration.
- FIG. 1 An example of an electronic device provided with the circuit board of this embodiment is shown, (a) is sectional drawing, (b) is an enlarged view of the S section in (a). It is the cross-sectional schematic which shows the measuring method of adhesive strength.
- FIG. 1A and 1B show an example of an electronic apparatus including a circuit board according to the present embodiment.
- FIG. 1A is a cross-sectional view
- FIG. 1B is an enlarged view of an S portion in FIG.
- the circuit board 10 of this embodiment includes a metal wiring layer 13 on at least one main surface 11a of a ceramic sintered body 11 with a glass layer 12 interposed therebetween.
- the electronic device 20 of the present embodiment is obtained by mounting an electronic component 21 on a circuit board 10. 1A, the electronic device 20 has the electronic component 21 mounted on the metal wiring layer 13 provided on one main surface 11a of the ceramic sintered body 11 constituting the circuit board 10 via the electrode pads 22. An example is shown. Further, FIG. 1A shows an example in which the electronic component 21 is electrically connected to the metal wiring layer 13 arranged in parallel by a bonding wire 23.
- the circuit board 10 of the present embodiment has a cross section in the thickness direction of the ceramic sintered body 11, that is, the main surface 11a.
- the interface between the glass layer 12 and the metal wiring layer 13 with respect to the length 12a of the glass layer 12 in the direction along the main surface 11a (hereinafter sometimes abbreviated as length 12a).
- the ratio of the length of 15 (hereinafter sometimes abbreviated as the length of the interface 15) is 1.25 or more and 1.80 or less.
- the ratio of the length of the interface 15 is 1.25 or more, the contact area between the glass layer 12 and the metal wiring layer 13 is increased, so that high adhesion strength can be obtained.
- the length of the interface 15 increases and the contact area increases.
- the increase in the length of the interface 15 means that there are many undulations, and this undulation is large.
- the upper limit of this ratio is 1.80 or less.
- the length 12a of the glass layer 12 may be full length or partial, but it is only necessary that the interface length 15a matches the region to be measured.
- the circuit board 10 of the present embodiment is excellent in heat dissipation characteristics by satisfying the above-described configuration, and the metal circuit board is operated by an electronic component or by a cooling / heating cycle when this operation and non-operation are repeated. Since peeling of the wiring layer 13 from the ceramic sintered body 11 can be reduced, the wiring layer 13 can be used for a long period of time and has high reliability.
- the circuit board 10 provided with the metal wiring layer 13 on the main surface 11a of the ceramic sintered body 11 via the glass layer 12 is cut in the thickness direction of the ceramic sintered body 11, and then the cross section polisher (CP) is formed.
- the polished surface is taken as the measurement surface.
- FIG. 1B conceptually shows this observation region, and the observation is performed so that the interface 15 is in the horizontal direction. And based on the image in this observation area, it analyzes using image analysis software (for example, ImageJ), and calculates
- image analysis software for example, ImageJ
- crystal particles 14 having an equivalent circle diameter of 0.4 ⁇ m or more and 2.0 ⁇ m or less exist in the glass layer 12, and in the glass layer 12, the crystal particles 14 corresponding to the length 12a It is preferable that the abundance ratio is 0.5 piece / ⁇ m or more and 0.9 piece / ⁇ m or less.
- the metal particles in the metal wiring layer 13 enter between the undulations of the glass layer 12 caused by the presence of the crystal particles 14 and the presence ratio thereof without deteriorating the heat dissipation characteristics.
- the strength can be further increased.
- the crystal particles 14 present in the glass layer 12 are zinc aluminate (ZnAl 2 O 4 ), magnesium aluminate (MgAl 2 O 4 ), manganese aluminate (MnAl 2 O 4 ), iron aluminate (FeAl). It is preferable that the crystal structure 14 is a crystal particle 14 having a spinel structure such as 2 O 4 ). When the crystal particle 14 has a spinel structure, since the crystal particle 14 has a sharp point, undulation is likely to occur at the interface 15, and the adhesion strength is increased by the metal particles of the metal wiring layer 13 entering between the undulations. Can be high.
- zinc aluminate is preferable among the above-described spinel-type crystal grains 14. This is because zinc aluminate has a large sharpness among the crystal particles 14 having a spinel structure. In addition, since zinc aluminate has a high electric resistance value, there is little risk of short circuit when the metal wiring layer 13 is arranged in parallel with a narrow interval, and the reliability of the circuit board 10 is less likely to be reduced. Because.
- the presence of the crystal particles 14 may be observed using a SEM at a magnification of 3000 times, for example, as in the calculation of the ratio of the length of the interface 15 to the length 12a.
- analysis software for example, ImageJ
- the number of crystal particles 14 having an equivalent circle diameter of 0.4 ⁇ m or more and 2.0 ⁇ m or less may be calculated and divided by the length of 12a.
- the existence ratio is calculated at a total of five locations by changing the observation area, and the average value is used as the existence ratio.
- the identification of the crystal particles 14 may be confirmed by using an EDS (energy dispersive X-ray analyzer) attached to the SEM or TEM (transmission electron microscope), or by an electron diffraction method using TEM.
- alumina particles are present in the metal wiring layer 13, and at least one of the same components as those constituting the glass layer 12 is present in the region where the alumina particles are present.
- the metal wiring layer 13 is formed by sintering using a metal paste containing a glass component, if the glass component extruded into the metal particles is exposed on the surface of the metal wiring layer 13, the plating adherence decreases.
- the same components as those constituting the glass layer 12 exist in the alumina particle existing region. It is based on the knowledge that it was.
- the structural component of the glass layer 12 is confirmed using EDS attached to the SEM for the cross section of the glass layer 12.
- the cross section of the metal wiring layer 13 is observed at a magnification of 10,000 times using SEM or TEM.
- the observation area at this time is, for example, 6 ⁇ m wide ⁇ 7 ⁇ m long.
- zirconia particles exist in the glass layer 12.
- the high chemical resistance of the zirconia particles can reduce the erosion of the glass layer 12 by the etching solution or the plating solution. As a result, high adhesion strength can be maintained.
- the presence of zirconia particles in the glass layer 12 can be confirmed by the following method. First, the cross section of the glass layer 12 is observed using a SEM or TEM at a magnification of 10,000 times. And what is necessary is just to confirm about this observation area
- the ceramic sintered body 11 is made of an aluminum oxide sintered body, and zirconia particles are present on the surface of the aluminum oxide sintered body.
- zirconia particles only need to be present on the surface of the aluminum oxide sintered body, and it is not required that the particles be present inside the aluminum oxide sintered body. When zirconia particles are present up to, the mechanical strength can be improved.
- the presence of zirconia particles on the surface of the aluminum oxide sintered body may be confirmed, for example, by the EDS attached to the SEM on the surface of the ceramic sintered body 11. Since the surface of the ceramic 11 also hits the interface with the glass layer 12 in the circuit board 10, the presence of zirconia may be confirmed with an EDS attached to the SEM in a cross section where this interface can be confirmed.
- the ceramic sintered body 11 constituting the circuit board 10 of the present embodiment includes an aluminum oxide sintered body, a zirconium oxide sintered body, a composite sintered body of aluminum oxide and zirconium oxide, a silicon nitride sintered body, and a nitrided body.
- An aluminum sintered body, a silicon carbide sintered body, or a mullite sintered body can be used. From the viewpoint of excellent mechanical strength while being relatively easy to process, the ceramic sintered body 11 is used. The method for producing the aluminum oxide sintered body will be described.
- oxidation is performed by a known method using powder of aluminum oxide (Al 2 O 3 ) and powder of silicon oxide (SiO 2 ), magnesium oxide (MgO), calcium oxide (CaO) or the like as a sintering aid.
- a ceramic sintered body 11 which is an aluminum sintered body is produced.
- the zirconium oxide powder may be blasted as an abrasive or the aluminum oxide sintered body
- a powder of zirconium oxide (ZrO 2 ) may be added.
- the addition amount of the zirconium oxide powder is, for example, 5 to 15 parts by mass with respect to 100 parts by mass of the aluminum oxide powder.
- R 2 O—B 2 O 3 —SiO 2 (R: alkali metal element), SiO 2 —Bi 2 O 3 —B 2 O 3 , R 2 O—SiO 2 —B 2 O 3
- the glass layer 12 is formed on the main surface 11a of the ceramic sintered body 11 by heat treatment using glass powder such as -Bi 2 O 3 system.
- zirconium oxide powder may be added to the glass powder.
- the addition amount of the zirconium oxide powder is, for example, 2 to 12 parts by mass with respect to 100 parts by mass of the glass powder.
- the size of the zirconium oxide powder is, for example, 0.05 to 1.0 ⁇ m.
- the characteristic glass layer 12 and metal wiring layer 13 in the circuit board 10 of the present embodiment by processing the surface of the glass layer 12 serving as the interface 15 between the glass layer 12 and the metal wiring layer 13 such as blasting, the characteristic glass layer 12 and metal wiring layer 13 in the circuit board 10 of the present embodiment.
- the surface property of the interface 15 can be made.
- the metal powder used for forming the metal wiring layer 13 is preferably copper because it has high thermal conductivity and can improve heat dissipation characteristics. Moreover, it may contain copper as a main component and contain at least one of zirconium, titanium, molybdenum or tin as a subcomponent.
- the main component refers to a component exceeding 50% by mass out of 100% by mass of all components constituting the metal wiring layer 13.
- a first metal powder having an average particle diameter of 1.0 ⁇ m or more and 3.5 ⁇ m or less and a second metal powder having an average particle diameter smaller than the first metal powder are prepared and mixed.
- the metal powder that has been used may be used.
- the average particle size of the second metal powder is preferably 30% or more and 50% or less of the average particle size of the first metal powder.
- the average particle diameter is smaller than the average particle diameter of the first metal powder in the gap between the particles of the first metal powder having a high mass ratio and a large average particle diameter.
- the organic vehicle is obtained by dissolving an organic binder in an organic solvent.
- the ratio of the organic binder to the organic solvent is 2 to 6 for the organic binder 1.
- the organic binder include acrylics such as polybutyl methacrylate and polymethyl methacrylate, celluloses such as nitrocellulose, ethyl cellulose, cellulose acetate, and butyl cellulose, polyethers such as polyoxymethylene, polybutadiene, and polyisoprene. 1 type or 2 types or more selected from these polyvinyls can be used.
- the organic solvent is selected from, for example, carbitol, carbitol acetate, terpineol, metacresol, dimethylimidazole, dimethylimidazolidinone, dimethylformamide, diacetone alcohol, triethylene glycol, paraxylene, ethyl lactate, and isophorone. 1 type or 2 types or more can be mixed and used.
- an aluminum oxide sintered body is prepared by the same production method as described above.
- a metal powder mainly composed of copper or silver, a glass powder, an inorganic powder that becomes crystal particles 14 present in the glass layer 12, and an organic vehicle are prepared.
- the compounding ratio of the metal powder, the glass powder, and the organic vehicle used as the metal paste is, for example, from 100% by mass of the metal paste to 77.0% by mass to 87.0% by mass of the metal powder and 0.5% by mass or more of the glass powder. 5 mass% or less, and the organic vehicle is in the range of 10 mass% or more and 20 mass% or less.
- the inorganic powder is preferably added in an amount of 15 to 40 parts by mass with respect to 100 parts by mass of the glass powder.
- the softening point of the glass powder to be used is preferably 500 ° C. or higher and 700 ° C. or lower, and particularly preferably 600 ° C. or higher and 700 ° C. or lower. is there.
- the average particle size of the glass powder is preferably 8% or more and 60% or less with respect to the average particle size of the first metal powder.
- the softening point is 600 ° C or higher and 700 ° C or lower, and when the average particle size of the glass powder is 8% or higher and 60% or lower with respect to the average particle size of the first metal powder, it is included in the metal paste.
- the glass powder to be softened easily during firing and easily moves toward the ceramic sintered body 11, and the glass layer 12 is easily formed on the main surface 11 a of the ceramic sintered body 11.
- aluminum oxide powder may be added at the time of producing the metal paste.
- the addition amount of the aluminum oxide powder is, for example, 0.05 to 0.5 parts by mass with respect to 100 parts by mass of the metal powder.
- the size of the aluminum oxide powder is, for example, 0.05 to 1 ⁇ m.
- the inorganic powder it is preferable to use a powder obtained by mixing aluminum oxide powder and zinc oxide powder, preliminarily calcining to produce zinc aluminate, and then pulverizing it. This is because zinc aluminate can have a more sharp shape by calcining in addition to the spinel structure.
- the calcining temperature may be 800 ° C. or more and 950 ° C. or less
- the calcining time may be 0.5 hours or more and 3 hours or less.
- magnesium aluminate aluminum oxide powder and magnesium oxide powder
- manganese aluminate aluminum oxide powder and manganese dioxide powder
- iron aluminate aluminum oxide powder and iron oxide powder
- the drying temperature is preferably 80 ° C. or higher and 150 ° C. or lower.
- the maximum temperature may be 900 ° C. or higher and 1050 ° C. or lower, and the baking time may be 0.5 hours or longer and 3 hours or shorter.
- the metal powder constituting the metal paste is silver
- the maximum temperature may be 850 ° C. or higher and 1000 ° C. or lower
- the baking time may be 0.5 hours or longer and 3 hours or shorter.
- the metal wiring layer 13 after forming a metal layer on the main surface 11a of the ceramic sintered body 11, a resist film is formed in a necessary region, and ferric chloride, cupric chloride or alkali is used.
- the metal wiring layer 13 may be formed by etching using an etching solution or the like, and then removing the resist film using a sodium hydroxide aqueous solution or the like.
- the thickness of the metal wiring layer 13 is preferably 8 ⁇ m or more and 30 ⁇ m or less.
- the thickness of the metal wiring layer 13 is not less than 8 ⁇ m and not more than 30 ⁇ m, necessary conductivity for use as the circuit board 10 can be obtained, and in the formation of the plurality of metal wiring layers 13 by etching, Since the interval can be narrowed and the pitch and line can be reduced, the heat dissipation characteristics can be further improved.
- a through hole is provided in the ceramic sintered body 11, the metal paste is filled in the through hole, and the metal paste is applied and fired so as to cover the through hole.
- the heat radiation characteristics can also be improved by applying a metal paste to the main surface and baking it.
- the ceramic sintered body 11 constituting the circuit board 10 of the present embodiment is not limited to a plate shape, but may have a channel formed therein by laminating sheets. As described above, when the flow path is formed inside the ceramic sintered body 11, the circuit board 10 can be obtained that has remarkably excellent heat dissipation characteristics by flowing a refrigerant made of gas or liquid.
- the circuit board 10 of the present embodiment obtained by the manufacturing method described above is excellent in heat dissipation characteristics, and is a metal by a cooling cycle when the electronic component 21 is operated or when this operation and non-operation are repeated. There is little peeling of the wiring layer 13 from the ceramic sintered body 11, and the wiring layer 13 has high reliability that can be used for a long period of time. Further, in the production of the circuit board 10 of the present embodiment, the glass layer 12 and the metal wiring layer 13 are formed by the above-described method using the ceramic sintered body 11 in which the division grooves are formed, and then divided into a large number. Individual circuit boards 10 can be efficiently manufactured. Note that the manufacturing method of the circuit board 10 of the present embodiment is not limited to the above-described manufacturing method.
- an electrode pad 22 is provided on the metal wiring layer 13 constituting the circuit board 10 of the present embodiment, and the electronic component 21 is mounted on the electrode pad 22.
- the electronic device 20 of the present embodiment can be obtained.
- the electronic device 20 of the present embodiment is a highly reliable electronic device 20 that can be used for a long period of time by mounting the electronic component 21 on the circuit board 10 of the present embodiment.
- Examples of the electronic component 21 mounted on the circuit board 10 include an insulated gate bipolar transistor (IGBT) element, an intelligent power module (IPM) element, and a metal oxide field effect transistor (MOSFET) element.
- IGBT insulated gate bipolar transistor
- IPM intelligent power module
- MOSFET metal oxide field effect transistor
- LED light emitting diode
- FWD free wheeling diode
- GTR giant transistor
- SBD Schottky barrier diode
- sublimation thermal printer heads or thermal inkjet printer heads These heating elements, Peltier elements, and the like can be used.
- an aluminum oxide sintered body having an aluminum oxide content of 96% by mass was prepared using silicon oxide and magnesium oxide as sintering aids.
- a glass layer 12 was formed on the main surface 11a of the ceramic sintered body 11 by heat treatment using R 2 O—B 2 O 3 —SiO 2 glass powder having a softening point of 630 ° C. Then, the surface of the glass layer 12 that becomes the interface 15 between the glass layer 12 and the metal wiring layer 13 was subjected to processing such as blasting. At this time, the surface condition of the glass layer 12 was varied by changing the blasting conditions.
- a metal paste to be the metal wiring layer 13 was produced.
- a metal powder made of copper was prepared by mixing 70% by mass of the first metal powder having an average particle diameter of 2.8 ⁇ m and 30% by mass of the second metal powder having an average particle diameter of 1.1 ⁇ m. Then, 82.5% by mass of a metal powder, 17.5% by mass of an organic vehicle (3.5% by mass of an acrylic resin as an organic binder, and 14% by mass of terpineol as an organic solvent) were prepared to prepare a metal paste.
- the metal wiring layer 13 was formed by drying, degreasing and firing. .
- the metal wiring layer 13 was formed to have a thickness of 20 ⁇ m.
- drying was performed at 100 ° C. in an air atmosphere, and firing was performed in a nitrogen atmosphere in which the oxygen concentration was adjusted to 5 ppm, by firing at a firing temperature of 950 ° C. and a firing time of 0.8 hours. 1 to 9 circuit boards were obtained.
- the ceramic sintered body 11 was cut in the thickness direction (perpendicular to the main surface), and a cross section polished by a cross section polisher (CP) was used as a measurement surface, and the SEM was used at a magnification of 3000 times. Observed. The observation area at this time was 43 ⁇ m wide ⁇ 28 ⁇ m long. And based on the image in this observation area
- ImageJ image analysis software
- FIG. 2 is a cross-sectional view showing a method for measuring the adhesion strength.
- This adhesion strength is obtained by pulling the plating lead 31 bonded to the metal wiring layer 13 via the solder 30 so that the metal wiring layer 13 is the glass layer 12 or The strength at the time of peeling from the ceramic sintered body 11 is measured.
- etching was performed so that the size of the metal wiring layer 13 was 2 ⁇ 2 mm 2 in each sample.
- flux XA-100 manufactured by Tamura Kaken Co., Ltd.
- Sn-Pb (6: 4) based solder 30 containing 2% by mass of Ag with respect to the whole are used, and the surface of this metal wiring layer 13 is used.
- a plated lead wire (Sn plating on a copper wire) 31 having a thickness of 0.6 mm was joined (soldered).
- the plated lead 31 is pulled at a speed of 7.62 mm / min, and the metal wiring layer 13 is the glass layer 12 or ceramic.
- the strength when peeled from the sintered body 11 was measured. The number of measurements was 10 for each sample, and the average of the 10 measurements was shown in Table 1 as the adhesion strength.
- a heat cycle test was performed as an evaluation of thermal reliability.
- 13 samples were prepared, and the ambient temperature of each sample was lowered from room temperature (25 ° C) to -45 ° C and held for 15 minutes using a thermal shock test device, and then the temperature was raised.
- the cycle of holding at 125 ° C for 15 minutes and then lowering to room temperature is taken as one cycle, and one sample is taken out for each 50 cycles between 1300 cycles and 1900 cycles, and peeling is confirmed.
- Table 1 shows the number of cycles.
- the confirmation of peeling was performed by observing at 1000 times magnification using SEM.
- the ratio of the length of the interface 15 between the glass layer 12 and the metal wiring layer 13 to the length 12a of the glass layer 12 is less than 1.25 or more than 1.80.
- Nos. 1 and 9 had low adhesion strength, and the number of cycles was 1400 or less, and the thermal reliability was low.
- the sample No. 1 in which the ratio of the length of the interface 15 between the glass layer 12 and the metal wiring layer 13 to the length 12a of the glass layer 12 is 1.25 or more and 1.80 or less.
- the adhesion strength was as high as 20 N / 2 ⁇ 2 mm 2 or more, the number of cycles was 1500 or more, and the thermal reliability was high.
- the adhesion strength was 33 N / 2 ⁇ 2 mm 2 or more, the number of cycles was 1700 or more, the adhesion strength was higher, and the thermal reliability was higher.
- the metal wiring layer 13 was provided on at least one main surface 11a of the ceramic sintered body 11 via the glass layer 12, and a cross section perpendicular to the main surface 11 of the ceramic sintered body 11 was seen.
- the ratio of the length of the interface 15 between the glass layer 12 and the metal wiring layer 13 to the length 12a of the glass layer 12 in the direction along the main surface 11a is 1.25 or more and 1.80 or less, the heat dissipation characteristics are excellent.
- the same ceramic sintered body 11 as that of Example 1 was prepared.
- the following was prepared as a metal paste.
- a metal powder made of copper was prepared by mixing 70% by mass of the first metal powder having an average particle diameter of 2.8 ⁇ m and 30% by mass of the second metal powder having an average particle diameter of 1.1 ⁇ m.
- aluminum oxide powder and zinc oxide powder are mixed at a molar ratio of 1: 1, calcining temperature is 900 ° C. and calcining time is 1 hour.
- a zinc aluminate powder pulverized to a diameter of 1.0 ⁇ m was prepared.
- magnesium aluminate, manganese aluminate, and iron aluminate powders were prepared in the same manner using magnesium oxide powder, manganese oxide, and iron oxide powder.
- an R 2 O—B 2 O 3 —SiO 2 glass powder having an average particle diameter of 1.3 ⁇ m and a softening point of 630 ° C. was prepared. And 82% by mass of metal powder, 3% by mass of glass powder, 15% by mass of organic vehicle (3% by mass of acrylic resin as organic binder, and 12% by mass of terpineol as organic solvent), A metal paste was prepared by blending inorganic powder with respect to 100 parts by mass of the glass powder having the mass shown in FIG.
- the metal wiring layer 13 was formed to have a thickness of 20 ⁇ m.
- drying was performed at 100 ° C. in an air atmosphere, and firing was performed in a nitrogen atmosphere in which the oxygen concentration was adjusted to 5 ppm, by firing at a firing temperature of 930 ° C. and a firing time of 0.8 hours. 10 to 20 circuit boards were obtained.
- the cross section of each sample prepared by the same method as in Example 1 was used as a measurement surface, and observed using a SEM at a magnification of 3000 times.
- the observation area here is also 43 ⁇ m wide ⁇ 28 ⁇ m long, and based on the image in this observation area, crystal grains 14 having an equivalent circle diameter of 0.4 ⁇ m or more and 2.0 ⁇ m or less using image analysis software (ImageJ).
- the number of crystal grains 14 was calculated and divided by the length of 12a (43 ⁇ m in this region) to obtain the abundance ratio of the crystal particles 14. This abundance ratio was calculated at a total of 5 locations by changing the observation region, and the average value is shown in Table 2 as the abundance ratio of the crystal particles 14 in each sample.
- the crystal particles 14 in each sample were identified by confirmation using an EDS attached to the SEM. In this identification, for example, if Al, O, Zn is detected, it is regarded as zinc aluminate.
- Sample No. No. 2 in which the abundance ratio of the crystal particles 14 having an equivalent circle diameter of 0.4 ⁇ m or more and 2.0 ⁇ m or less in the glass layer 12 is 0.50 / ⁇ m or more and 0.90 / ⁇ m or less.
- Nos. 11 to 16 and 18 to 20 had high adhesion strength of 35 N / 2 ⁇ 2 mm 2 or more, a cycle number of 1700 or more, and high thermal reliability.
- the adhesion strength was 50 N / 2 ⁇ 2 mm 2 or more, and the number of cycles was 1800 or more. The adhesion strength was higher and the thermal reliability was higher.
- crystal particles 14 are preferably zinc aluminate.
- Example 2 screen printing is performed on the main surface 11a of the ceramic sintered body 11 so that 225 (15 ⁇ 15) 2 ⁇ 2 mm 2 metal wiring layers 13 are formed after firing, A metal wiring layer 13 having a thickness of 20 ⁇ m was formed by drying and firing. Subsequent drying and firing conditions were the same as in Example 2.
- the metal wiring layer 13 was plated using a Ni plating solution. Specifically, using a new solution of Ni plating having a known blending ratio mainly composed of carboxylate, phosphate and nickel sulfate, the test temperature is set to 84 ° C., and the Ni plating thickness is about 4 ⁇ m. Until the sample no. 21 to 23 circuit boards were obtained.
- the structural component of the glass layer 12 was confirmed using EDS attached to the SEM for the cross section of the glass layer 12. Then, the cross section of the metal wiring layer 13 is observed with a SEM at a magnification of 10,000, and the mapping obtained using the attached EDS is used to locate the alumina particles (position where the mapping of aluminum and oxygen overlaps). In this case, it was confirmed whether or not silicon was present as the same component as the constituent component of the glass layer 12 previously confirmed, and Table 3 shows the presence or absence of the glass component in the alumina particle existing region.
- samples with different presence of zirconia particles in the glass layer 12 were prepared, and the adhesion strength before and after the acid treatment was confirmed.
- Sample No. in which zirconia particles exist in the glass layer 12 For No. 25, 5 parts by mass of zirconium oxide powder was added to 100 parts by mass of glass powder. Same as 13. Sample No. to which no zirconium oxide powder was added. 24 is Sample No. Same as 13. Two samples were prepared for each sample.
- Samples with different presence of zirconia particles on the surface of the aluminum oxide sintered body were prepared, and the reflectance was confirmed.
- 8 parts by mass of zirconium oxide powder was added to 100 parts by mass of aluminum oxide powder during the production of the aluminum oxide sintered body.
- Sample No. 26 is Sample No. Same as 13.
- Circuit board 11 Ceramic sintered body 11a: Main surface 12: Glass layer 12a: Length 13: Metal wiring layer 14: Crystal particles 15: Interface 20: Electronic device 21: Electronic component 22: Electrode pad 23: Bonding wire
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
11:セラミック焼結体
11a:主面
12:ガラス層
12a:長さ
13:金属配線層
14:結晶粒子
15:界面
20:電子装置
21:電子部品
22:電極パッド
23:ボンディングワイヤ
Claims (6)
- セラミック焼結体の少なくとも一方の主面にガラス層を介して金属配線層を備えてなり、前記セラミック焼結体の前記主面に対して垂直な断面を見たときに、前記主面に沿う方向の前記ガラス層の長さに対する前記ガラス層と前記金属配線層との界面長さの比率が1.25以上1.80以下であることを特徴とする回路基板。
- 前記ガラス層中に、円相当径が0.4μm以上2.0μm以下の結晶粒子が存在しており、前記ガラス層の長さに対する前記結晶粒子の存在比率が0.50個/μm以上0.90個/μm以下であることを特徴とする請求項1に記載の回路基板。
- 前記金属配線層にアルミナ粒子が存在し、かつ該アルミナ粒子の存在領域に前記ガラス層の構成成分と同じ成分のうち少なくとも1つの成分が存在していることを特徴とする請求項1または請求項2に記載の回路基板。
- 前記ガラス層に、ジルコニア粒子が存在することを特徴とする請求項1乃至請求項3に記載の回路基板。
- 前記セラミック焼結体が酸化アルミニウム質焼結体からなり、該酸化アルミニウム質焼結体の表面にジルコニア粒子が存在していることを特徴とする請求項1乃至請求項4のいずれかに記載の回路基板。
- 請求項1乃至請求項5のいずれかに記載の回路基板に電子部品を搭載してなることを特徴とする電子装置。
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US14/407,405 US9980384B2 (en) | 2012-06-21 | 2013-06-21 | Circuit board and electronic apparatus including the same |
JP2014521529A JP5905962B2 (ja) | 2012-06-21 | 2013-06-21 | 回路基板およびこれを備える電子装置 |
EP13807421.6A EP2866534B1 (en) | 2012-06-21 | 2013-06-21 | Circuit board and electronic apparatus provided with the circuit board |
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JP2012140165 | 2012-06-21 | ||
JP2012-140165 | 2012-06-21 |
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US (1) | US9980384B2 (ja) |
EP (1) | EP2866534B1 (ja) |
JP (1) | JP5905962B2 (ja) |
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Cited By (2)
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CN110800118A (zh) * | 2017-06-29 | 2020-02-14 | 京瓷株式会社 | 电路基板以及具备该电路基板的发光装置 |
WO2020145360A1 (ja) * | 2019-01-10 | 2020-07-16 | 株式会社マテリアル・コンセプト | 電子部品及びその製造方法 |
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JP6020496B2 (ja) * | 2014-03-20 | 2016-11-02 | 株式会社豊田中央研究所 | 接合構造体およびその製造方法 |
US10531562B2 (en) * | 2017-05-31 | 2020-01-07 | International Business Machines Corporation | Heat-activated conductive spinel materials for printed circuit board via overcurrent protection |
CN108668453A (zh) * | 2018-04-27 | 2018-10-16 | 深圳顺络电子股份有限公司 | 一种多孔加热组件及其制作方法 |
KR20210142631A (ko) * | 2019-03-26 | 2021-11-25 | 미쓰비시 마테리알 가부시키가이샤 | 절연 회로 기판 |
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- 2013-06-21 JP JP2014521529A patent/JP5905962B2/ja active Active
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Also Published As
Publication number | Publication date |
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JPWO2013191288A1 (ja) | 2016-05-26 |
US20150144385A1 (en) | 2015-05-28 |
EP2866534B1 (en) | 2019-05-01 |
US9980384B2 (en) | 2018-05-22 |
EP2866534A4 (en) | 2016-01-20 |
EP2866534A1 (en) | 2015-04-29 |
JP5905962B2 (ja) | 2016-04-20 |
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