WO2013168404A1 - 試料分析素子並びに検査装置およびセンサーカートリッジ - Google Patents

試料分析素子並びに検査装置およびセンサーカートリッジ Download PDF

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Publication number
WO2013168404A1
WO2013168404A1 PCT/JP2013/002926 JP2013002926W WO2013168404A1 WO 2013168404 A1 WO2013168404 A1 WO 2013168404A1 JP 2013002926 W JP2013002926 W JP 2013002926W WO 2013168404 A1 WO2013168404 A1 WO 2013168404A1
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WIPO (PCT)
Prior art keywords
nanostructure
nanostructures
substrate
light
sample analysis
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Ceased
Application number
PCT/JP2013/002926
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English (en)
French (fr)
Japanese (ja)
Inventor
守 杉本
尼子　淳
秀明 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to US14/400,193 priority Critical patent/US9222889B2/en
Publication of WO2013168404A1 publication Critical patent/WO2013168404A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Definitions

  • the present invention relates to a sample analysis element including a nanobody covered with a metal film, and an inspection apparatus and a sensor cartridge using the sample analysis element.
  • a sample analysis element using localized surface plasmon resonance (LSPR) is known.
  • LSPR localized surface plasmon resonance
  • Such a sample analysis element comprises, for example, a nanobody covered with a metal film.
  • the nanobody is formed, for example, sufficiently smaller than the wavelength of the excitation light.
  • excitation light is irradiated onto the metal film on the nanobody, all electric dipoles are aligned and an enhanced electric field is induced.
  • near-field light is generated on the surface of the metal film.
  • a so-called hot spot is formed.
  • Non-Patent Document 1 the nano objects are arranged in a lattice pattern at a predetermined pitch.
  • the pitch is set to a size corresponding to the wavelength of propagating surface plasmon resonance (PSPR), enhancement of near-field light is observed in the metal film on the nanoparticles.
  • PSPR surface plasmon resonance
  • the sample analysis element described above can be used in a target substance inspection apparatus.
  • the pitch is set to a size corresponding to the wavelength of the propagation surface plasmon resonance, the surface density of the hot spot is significantly reduced, and the target substance is easily attached to the hot spot. I can't.
  • a sample analysis element capable of enhancing near-field light while increasing the surface density of hot spots.
  • One embodiment of the present invention includes a substrate and a plurality of nanostructures arranged on the surface of the substrate and covering a dielectric with a metal film, and the nanostructure includes a plurality of rows of nanostructures In each of the nanostructure rows, the nanostructures are arranged in a first direction at a first pitch smaller than the wavelength of the excitation light, and the nanostructure rows are second larger than the first pitch.
  • the present invention relates to a sample analysis element arranged in a second direction that intersects the first direction at a pitch.
  • the localized surface plasmon resonance is caused in the nanostructured metal film by the action of the excitation light.
  • Propagation surface plasmon resonance is caused by the action of the pitch of the nanostructure array (second pitch) based on the evanescent wave.
  • Propagating surface plasmon resonance couples to localized surface plasmon resonance.
  • a so-called hybrid mode is established.
  • localized surface plasmon resonance is enhanced by propagating surface plasmon resonance
  • near-field light is enhanced by the metal film of the nanostructure.
  • a so-called hot spot is formed.
  • the surface density of the nanostructures is higher than when nanostructures are arranged at a pitch that resonates with excitation light. It is done. Therefore, the surface density of the hot spot is increased.
  • a region not including the nanostructures may be formed between the nanostructure rows. That is, the formation of nanostructures between rows of nanostructures is excluded. Localized surface plasmon resonance is not induced between nanostructure arrays.
  • the dielectric of the nanostructure can be formed integrally with the substrate.
  • the nanostructured dielectric and the substrate can be formed from the same material.
  • the dielectric and substrate of the nanostructure array can be formed by integral molding. The manufacturing process of the sample analysis element can be simplified. The mass productivity of the sample analysis element can be increased.
  • the substrate may be formed of a molding material.
  • the dielectric and substrate of the nanostructure array can be formed by integral molding.
  • the mass productivity of the sample analysis element can be increased.
  • the metal film can cover the surface of the substrate.
  • the metal film only needs to be uniformly formed on the surface of the substrate. Therefore, the manufacturing process of the sample analysis element can be simplified. The mass productivity of the sample analysis element can be increased.
  • the wave number of the intersection point between the localized plasmon wavelength generated in the nanostructures arranged at the first pitch and the dispersion relation with the metal film can be set to the second pitch.
  • the sample analysis element can be used by being incorporated in an inspection apparatus.
  • the inspection apparatus includes a sample analysis element, a light source that emits light toward the nanostructure array, and a photodetector that detects light emitted from the nanostructure array in response to the light irradiation. be able to.
  • a plurality of housings that define a detection chamber, a base having a surface in contact with the space of the detection chamber, and a dielectric film that is arranged on the surface of the base and covers a dielectric with a metal film.
  • the nanostructures form a plurality of nanostructure rows, and in each of the nanostructure rows, the nanostructures are arranged at a first pitch smaller than the wavelength of the excitation light.
  • the sensor cartridge is arranged in one direction, and the nanostructure rows are arranged in a second direction intersecting the first direction at a second pitch larger than the first pitch.
  • FIG. 2 is a vertical sectional view taken along line 2-2 in FIG. It is (a) top view and (b) side view which show the unit unit of a simulation model. It is a top view of (a) the model which concerns on this embodiment of a simulation model, and (b) a comparison model. It is a graph which shows the dispersion
  • FIG. 1 schematically shows a sample analysis element 11 according to an embodiment of the present invention.
  • the sample analysis element 11, that is, the sensor chip includes a substrate (base body) 12.
  • the substrate 12 is formed from a molding material, for example.
  • a resin material can be used as the molding material.
  • the resin material may include an acrylic resin such as polymethyl methacrylate resin (PMMA resin).
  • a metal film 13 is formed on the surface of the substrate 12.
  • the metal film 13 is made of metal.
  • the metal film 13 can be made of silver, for example.
  • gold or aluminum may be used as the metal.
  • the metal film 13 can be formed on the surface of the substrate 12 without interruption.
  • the metal film 13 can be formed with a uniform film thickness.
  • the film thickness of the metal film 13 can be set to about 20 nm, for example.
  • a nanostructure 15 is formed on the surface of the metal film 13.
  • the nanostructure 15 protrudes from the surface of the metal film 13.
  • the nanostructures 15 are dispersed on the surface of the substrate 12.
  • Individual nanostructures 15 are formed in a prismatic shape.
  • the horizontal cross section that is, the contour of the prism is formed in, for example, a square.
  • the length of one side of the square can be set to about 1 to 1000 nm, for example.
  • the height of the prism (from the surface of the metal film 13) can be set to about 10 to 100 nm, for example.
  • the horizontal cross section of the prism may be formed in a polygon other than a square.
  • the nanostructure 15 may be formed in a cylindrical or other three-dimensional shape.
  • the nanostructure 15 forms a nanostructure row 16. Within each nanostructure row 16, the nanostructures 15 are arranged in a row on the surface of the metal film 13 with a short pitch SP (first pitch). The nanostructure row 16 extends in the first direction SD.
  • the short pitch SP is set smaller than the wavelength of the excitation light.
  • the nanostructure rows 16 are arranged in parallel at a predetermined long pitch LP (second pitch) in the second direction DR intersecting the first direction SD.
  • the second direction DR is orthogonal to the first direction SD within one virtual plane including the surface of the substrate 12.
  • the long pitch LP is set larger than at least the short pitch SP.
  • the size of the long pitch LP is set according to the wave number of the evanescent wave, as will be described later.
  • a planar region (region not including the nanostructure) 17 that does not include the nanostructure is formed. That is, the formation of the nanostructure 15 is excluded between adjacent nanostructure rows 16.
  • each nanostructure 15 includes a dielectric body 18.
  • the main body 18 is formed in a prismatic shape.
  • the main body 18 protrudes from the surface of the substrate 12.
  • the body 18 can be formed from the same material as the material of the substrate 12.
  • the main body 18 can be integrally formed on the surface of the substrate 12.
  • the surface of the main body 18 is covered with a metal film 19.
  • the metal film 19 can be formed from the same material as the metal film 13.
  • the metal film 19 and the metal film 13 can be formed as a single film.
  • the metal film 19 can be formed with a uniform film thickness.
  • each nanostructure 15 is set to be sufficiently smaller than the wavelength of the excitation light.
  • LSPR localized surface plasmon resonance
  • PSPR propagation surface plasmon resonance
  • Propagating surface plasmon resonance is coupled to localized surface plasmon resonance of nanostructure 15. A so-called hybrid mode is established.
  • the localized surface plasmon resonance is enhanced by the propagation surface plasmon resonance, and the near-field light is enhanced by the metal film 19 of the nanostructure 15.
  • a so-called hot spot is formed.
  • the interval between the nanostructures 15 is set to a short pitch SP smaller than the long pitch LP in each nanostructure row 16, the interval between the nanostructures 15 is set to the long pitch LP.
  • the surface density of the nanostructure 15 is increased.
  • the surface density of the hot spot is increased.
  • the present inventors verified the electric field strength of the sample analysis element 11.
  • simulation software of the FDTD (Finite-Difference Time-Domain) method was used.
  • the present inventor constructed a unit unit of a simulation model based on Yee Cell.
  • a silver metal film 13 was formed on a 120 nm square PMMA substrate 12.
  • the film thickness of the metal film 13 was set to 20 nm.
  • the outline of the PMMA main body 18 was set to a 40 nm square.
  • the height of the main body 18 (from the surface of the substrate 12) was set to 60 nm.
  • one row of unit units that is, nanostructures 15 constitute one row of nanostructures 16.
  • a plurality of nanostructure rows 16 were arranged in parallel.
  • a long pitch LP was set between the nanostructure rows 16 in the x-axis direction.
  • a planar region 17 was formed between the nanostructure rows 16 by one row of void unit units.
  • the void unit was composed of 120 nm square voids.
  • the electric field strength Ex was calculated for the first nanostructure 15.
  • Linearly polarized excitation light was set.
  • the polarization plane was adjusted in the x-axis direction.
  • the excitation light was set at normal incidence.
  • the present inventor prepared a comparative model.
  • the long pitch LP was set to 120 nm. That is, the plane area 17 is omitted.
  • the nanostructures 15 are simply arranged in a lattice pattern with a short pitch SP.
  • the electric field strength Ex was calculated for one selected nanostructure 15.
  • FIG. 5 shows the dispersion relation created based on the electric field intensity Ex.
  • the sum of squares of the electric field intensity Ex converted per unit area was specified.
  • the electric field strength Ex was calculated at each of the four apexes on the upper side of the nanostructure 15.
  • the square value of the electric field intensity Ex was calculated for each individual vertex, and the square values of all the vertexes of the minimum unit of the repeated calculation were added.
  • the area of the comparative model was set as the unit area.
  • the combined results were converted per unit area.
  • the square sum of the electric field intensity Ex per unit area was calculated.
  • the relationship between the wavelength of the excitation light and the sum of squares, that is, the frequency characteristic was calculated.
  • the wave number k is specified according to the long pitch LP.
  • the resonance wavelength of localized surface plasmon resonance can be determined according to the volume of the nanostructure 15 and the film thickness of the metal film 19. So-called Anti-Crossing Behavior (known as a hybrid mode indicator) was not observed.
  • FIG. 7 shows the wavelength dependence of the maximum value of the electric field intensity Ex.
  • the present inventor prepared a first comparison unit.
  • a silver metal film 13 was formed on the surface of a 120 nm square silicon (Si) substrate 12.
  • the film thickness of the metal film 13 was set to 20 nm.
  • the body 18 of the nanostructure 15 was formed from silicon dioxide (SiO 2 ).
  • Other structures were formed in the same manner as the unit unit described above.
  • the inventor similarly prepared a second comparison unit.
  • a silver metal film 13 was formed on the surface of a 120 nm square silicon dioxide (SiO 2 ) substrate 12.
  • the film thickness of the metal film 13 was set to 20 nm.
  • the body 18 of the nanostructure 15 was formed from silicon dioxide (SiO 2 ). That is, the main body 18 of the nanostructure 15 and the substrate 12 were set to an integral structure.
  • Other structures were formed in the same manner as the unit unit described above.
  • FIG. 10 shows the wavelength dependence of the electric field intensity Ex.
  • a comparison model was constructed with the unit unit, the first comparison unit unit, and the second comparison unit unit.
  • the square sum of the electric field intensity Ex per unit area was calculated for each wavelength of the excitation light in the same manner as described above.
  • the refractive index of silicon dioxide was set to 1.45
  • the refractive index of PMMA was set to 1.48.
  • the first comparison unit unit an increase in the electric field intensity Ex was observed with respect to the unit unit and the second comparison unit unit. Almost no difference in electric field intensity Ex was observed between the unit unit and the second comparison unit unit.
  • the electric field intensity Ex has increased due to the effect of the return light reflected from the surface of the silicon substrate 12.
  • the main body 18 of the nanostructure 15 and the substrate 12 can be formed of the same material.
  • the main body 18 of the nanostructure 15 and the substrate 12 can be formed by integral molding.
  • the manufacturing process of the sample analysis element 11 can be simplified.
  • the mass productivity of the sample analysis element 11 can be increased.
  • the nanostructure 15 and the substrate 12 may be formed from a molding material.
  • a stamper is manufactured when the sample analysis element 11 is manufactured.
  • silicon dioxide (SiO 2 ) protrusions 24 are formed on the surface of the silicon (Si) substrate 23.
  • the surface of the silicon substrate 23 is formed as a smooth surface.
  • the protrusions 24 represent the main body 18 of the nanostructure 15 that is dispersed on the surface of the substrate 12.
  • a lithography technique can be used.
  • a silicon dioxide film is formed on the entire surface of the silicon substrate 23.
  • a mask simulating the body 18 of the nanostructure 15 is formed on the surface of the silicon dioxide film.
  • a photoresist film may be used for the mask.
  • a nickel (Ni) film 25 is formed on the surface of the silicon substrate 23. Electroless plating is performed when forming the nickel film 25. Subsequently, as shown in FIG. 13, electroforming is performed based on the nickel film 25. A thick nickel plate 26 is formed on the surface of the silicon substrate 23. Thereafter, as shown in FIG. 14, the nickel plate 26 is peeled from the silicon substrate 23. Thus, a nickel stamper can be manufactured. The surface of the nickel plate 26, that is, the stamper is formed as a smooth surface. A recess 27 is formed on the smooth surface by the separation marks of the protrusions 24.
  • the substrate 28 is molded.
  • injection molding of a molding material can be used.
  • the main body 18 of the nanostructure 15 is integrally formed on the surface of the substrate 28.
  • a metal film 29 is formed on the entire surface of the substrate 28.
  • electroless plating, sputtering, vapor deposition, or the like can be used.
  • the dielectric body 18 is covered with the metal film 19.
  • a nanostructure 15 is formed.
  • the individual substrates 12 are cut out from the substrate 28.
  • the surface of the substrate 12 is covered with a metal film 13.
  • the stamper can greatly contribute to the improvement of the productivity of the sample analysis element 11.
  • FIG. 17 schematically shows a target molecule testing device (testing device) 101 according to one embodiment.
  • the target molecule testing apparatus 101 includes a housing 102.
  • a sensor cartridge 103 is incorporated in the housing 102.
  • An introduction passage 104 and a discharge passage 105 are individually connected to the sensor cartridge 103.
  • Gas is introduced into the sensor cartridge 103 from the introduction passage 104.
  • the gas is discharged from the sensor cartridge 103 to the discharge passage 105.
  • a filter 107 is installed at the passage inlet 106 of the introduction passage 104.
  • the filter 107 can remove dust and water vapor in the gas, for example.
  • a suction unit 109 is installed at the passage outlet 108 of the discharge passage 105.
  • the suction unit 109 is configured by a blower fan. In accordance with the operation of the blower fan, gas flows in order through the introduction passage 104, the sensor cartridge 103, and the discharge passage 105. Shutters (not shown) are installed before and after the sensor cartridge 103 in such a gas flow path. Gas can be confined in the sensor cartridge 103 according to the opening and closing of the shutter.
  • An identification sensor 111 is incorporated in the housing 102.
  • the identification sensor 111 identifies attachment / detachment of the sensor cartridge 103.
  • the identification sensor 111 outputs a predetermined electrical signal in accordance with the mounting and removal of the sensor cartridge 103.
  • the sensor cartridge 103 can be detachably attached to the introduction passage 104 and the discharge passage 105.
  • the target molecule inspection apparatus 101 includes a Raman scattered light detection unit 112.
  • the Raman scattered light detection unit 112 detects the Raman scattered light by irradiating the sensor cartridge 103 with excitation light.
  • the Raman scattered light detection unit 112 defines a light shielding chamber 113 in the housing 102.
  • the light shielding chamber 113 is shielded from ambient light.
  • the Raman scattered light detection unit 112 includes a light source 114.
  • the light source 114 is disposed in the light shielding chamber 113.
  • a laser light source can be used as the light source 114.
  • the laser light source can emit linearly polarized laser light at a specific wavelength (single wavelength).
  • the Raman scattered light detection unit 112 includes a light receiving element 115.
  • the light receiving element 115 can detect the intensity of light.
  • the light receiving element 115 can output a detection current according to the intensity of light. Therefore, the intensity of light can be specified according to the magnitude of the current output from the light receiving element 115.
  • an optical system 116 is constructed between the light source 114 and the sensor cartridge 103 and between the sensor cartridge 103 and the light receiving element 115.
  • the optical system 116 forms an optical path between the light source 114 and the sensor cartridge 103 and simultaneously forms an optical path between the sensor cartridge 103 and the light receiving element 115.
  • the light of the light source 114 is guided to the sensor cartridge 103 by the action of the optical system 116.
  • the reflected light of the sensor cartridge 103 is guided to the light receiving element 115 by the action of the optical system 116.
  • the optical system 116 includes a collimator lens 117, a dichroic mirror 118, an objective lens 119, a condenser lens 121, a concave lens 122, an optical filter 123, and a spectroscope 124.
  • the dichroic mirror 118 is disposed between the sensor cartridge 103 and the light receiving element 115, for example.
  • the objective lens 119 is disposed between the dichroic mirror 118 and the sensor cartridge 103.
  • the objective lens 119 collects the parallel light supplied from the dichroic mirror 118 and guides it to the sensor cartridge 103.
  • the reflected light of the sensor cartridge 103 is converted into parallel light by the objective lens 119 and transmitted through the dichroic mirror 118.
  • a condensing lens 121, a concave lens 122, an optical filter 123, and a spectroscope 124 are disposed between the dichroic mirror 118 and the light receiving element 115.
  • the optical axes of the objective lens 119, the condenser lens 121, and the concave lens 122 are coaxially adjusted.
  • the light condensed by the condenser lens 121 is converted again into parallel light by the concave lens 122.
  • the optical filter 123 removes Rayleigh scattered light.
  • the Raman scattered light passes through the optical filter 123.
  • the spectroscope 124 selectively transmits light having a specific wavelength.
  • the light receiving element 115 detects the light intensity for each specific wavelength.
  • an etalon can be used for the spectroscope 124.
  • the optical axis of the light source 114 is orthogonal to the optical axes of the objective lens 119 and the condenser lens 121.
  • the surface of the dichroic mirror 118 intersects these optical axes at an angle of 45 degrees.
  • a collimator lens 117 is disposed between the dichroic mirror 118 and the light source 114. In this way, the collimator lens 117 is faced to the light source 114.
  • the optical axis of the collimator lens 117 is coaxially aligned with the optical axis of the light source 114.
  • the target molecule testing apparatus 101 includes a control unit 126.
  • the identification unit 111, the light source 114, the spectroscope 124, the light receiving element 115, the suction unit 109, and other devices are connected to the control unit 126.
  • the control unit 126 controls operations of the light source 114, the spectroscope 124, and the suction unit 109, and processes output signals from the identification sensor 111 and the light receiving element 115.
  • a signal connector 127 is connected to the control unit 126.
  • the control unit 126 can exchange signals with the outside through the signal connector 127.
  • the target molecule testing apparatus 101 includes a power supply unit 128.
  • the power supply unit 128 is connected to the control unit 126.
  • the power supply unit 128 supplies operating power to the control unit 126.
  • the control unit 126 can operate by receiving power from the power supply unit 128.
  • a primary battery or a secondary battery can be used for the power supply unit 128.
  • the secondary battery can have a power connector 129 for charging, for example.
  • the control unit 126 includes a signal processing control unit.
  • the signal processing control unit can be constituted by, for example, a central processing unit (CPU) and a storage circuit such as a RAM (Random Access Memory) and a ROM (Read Only Memory).
  • a processing program and spectrum data can be stored in the ROM.
  • the spectrum data identifies the Raman scattered light spectrum of the target molecule.
  • the CPU executes the processing program while temporarily fetching the processing program and spectrum data into the RAM.
  • the CPU compares the spectrum data with the spectrum of light specified by the action of the spectroscope and the light receiving element.
  • the sensor cartridge 103 includes a housing 131.
  • the casing 131 defines the detection chamber 132.
  • the detection chamber 132 is connected to the introduction passage 104 at one end and to the discharge passage 105 at the other end.
  • the sensor chip 11 is incorporated in the housing 131.
  • the surface of the substrate 12 is in contact with the space of the detection chamber 132.
  • Light emitted from the light source 114 is converted into parallel light by the collimator lens 117.
  • the linearly polarized light is reflected by the dichroic mirror 118.
  • the reflected light is collected by the objective lens 119 and applied to the sensor cartridge 103.
  • the light passes through the housing 131 of the sensor cartridge 103 and reaches the sensor chip 11.
  • the light can be incident in a vertical direction orthogonal to the surface of the sensor chip 11. So-called normal incidence can be established.
  • the plane of polarization of light is aligned parallel to the nanostructure array 16 (first direction SD).
  • Localized surface plasmon resonance is caused in the metal film 19 of the nanostructure 15 by the action of the irradiated light.
  • Near-field light is enhanced between the nanostructures 15. A so-called hot spot is formed.
  • the light emitted from the sensor cartridge 103 is converted into parallel light by the objective lens 119 and passes through the dichroic mirror 118, the condenser lens 121, the concave lens 122 and the optical filter 123.
  • the Raman scattered light is incident on the spectroscope 124.
  • the spectroscope 124 separates the Raman scattered light.
  • the light receiving element 115 detects the light intensity for each specific wavelength.
  • the spectrum of light is checked against the spectral data.
  • the target molecule can be detected.
  • the target molecule detection apparatus 101 can detect a target substance such as adenovirus, rhinovirus, HIV virus, or influenza virus based on the surface enhanced Raman scattering.
  • Sample analysis element 12 substrate, 13 metal film, 15 nanostructure, 16 nanostructure array, 17 area not including nanostructure (planar area), 18 dielectric (main body), 19 metal film, 101 inspection device (Target molecule testing device), 103 sensor cartridge, 114 light source, 115 photodetector (light receiving element), 131 housing, SP first pitch (short pitch), LP second pitch (long pitch).

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  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
PCT/JP2013/002926 2012-05-11 2013-05-02 試料分析素子並びに検査装置およびセンサーカートリッジ Ceased WO2013168404A1 (ja)

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JP2012-109188 2012-05-11
JP2012109188A JP2013234977A (ja) 2012-05-11 2012-05-11 試料分析素子並びに検査装置およびセンサーカートリッジ

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JP2014169955A (ja) 2013-03-05 2014-09-18 Seiko Epson Corp 分析装置、分析方法、これらに用いる光学素子および電子機器、並びに光学素子の設計方法
JP6365817B2 (ja) 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
JP2015152492A (ja) * 2014-02-17 2015-08-24 セイコーエプソン株式会社 分析装置、及び電子機器
US11268854B2 (en) * 2015-07-29 2022-03-08 Samsung Electronics Co., Ltd. Spectrometer including metasurface
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006003149A (ja) * 2004-06-16 2006-01-05 Nippon Telegr & Teleph Corp <Ntt> Ｓｐｒセンサーおよび屈折率測定方法
JP2009085724A (ja) * 2007-09-28 2009-04-23 Canon Inc 標的物質検出装置、及び標的物質検出方法
JP2009115492A (ja) * 2007-11-02 2009-05-28 Canon Inc 化学センサ素子、センシング装置およびセンシング方法
JP2010256161A (ja) * 2009-04-24 2010-11-11 Konica Minolta Holdings Inc プラズモン励起センサおよびそれを用いたアッセイ法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3452837B2 (ja) 1999-06-14 2003-10-06 理化学研究所 局在プラズモン共鳴センサー
JP4231701B2 (ja) 2002-01-08 2009-03-04 富士フイルム株式会社 プラズモン共鳴デバイス
US7079250B2 (en) 2002-01-08 2006-07-18 Fuji Photo Film Co., Ltd. Structure, structure manufacturing method and sensor using the same
US7399445B2 (en) 2002-01-11 2008-07-15 Canon Kabushiki Kaisha Chemical sensor
JP3897703B2 (ja) 2002-01-11 2007-03-28 キヤノン株式会社 センサ装置およびそれを用いた検査方法
US7088449B1 (en) 2002-11-08 2006-08-08 The Board Of Trustees Of The Leland Stanford Junior University Dimension measurement approach for metal-material
EP1445601A3 (en) 2003-01-30 2004-09-22 Fuji Photo Film Co., Ltd. Localized surface plasmon sensor chips, processes for producing the same, and sensors using the same
JP3957199B2 (ja) 2003-03-19 2007-08-15 富士フイルム株式会社 センサチップおよびセンサチップの製造方法並びにそのセンサチップを用いたセンサ
US7239076B2 (en) * 2003-09-25 2007-07-03 General Electric Company Self-aligned gated rod field emission device and associated method of fabrication
NZ551786A (en) 2004-05-19 2011-03-31 Vp Holding Llc Optical sensor with layered plasmon structure for enhanced detection of chemical groups by surface enhanced raman scattering
GB2419940B (en) 2004-11-04 2007-03-07 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
JP2006208057A (ja) 2005-01-25 2006-08-10 Taiyo Yuden Co Ltd プラズモン共鳴構造体，その制御方法，金属ドメイン製造方法
JP2007218900A (ja) 2006-01-18 2007-08-30 Canon Inc 標的物質検出用の素子
WO2007083817A1 (en) 2006-01-18 2007-07-26 Canon Kabushiki Kaisha Target substance-detecting element
JP2007240361A (ja) 2006-03-09 2007-09-20 Sekisui Chem Co Ltd 局在プラズモン増強センサ
JP4994682B2 (ja) 2006-03-16 2012-08-08 キヤノン株式会社 検知素子、該検知素子を用いた標的物質検知装置及び標的物質を検知する方法
JP5286515B2 (ja) 2006-05-11 2013-09-11 国立大学法人秋田大学 センサチップ及びセンサチップ製造方法
WO2007132795A1 (en) 2006-05-12 2007-11-22 Canon Kabushiki Kaisha Detecting element, detecting device and detecting method
JP2008025989A (ja) 2006-07-15 2008-02-07 Keio Gijuku 局在表面プラズモン共鳴法と質量分析法によるリガンドの分析方法及びそのためのセンサー素子
GB2447696A (en) 2007-03-23 2008-09-24 Univ Exeter Photonic biosensor arrays
US7768640B2 (en) 2007-05-07 2010-08-03 The Board Of Trustees Of The University Of Illinois Fluorescence detection enhancement using photonic crystal extraction
JP5116362B2 (ja) 2007-05-28 2013-01-09 株式会社リコー バイオセンサ
US7639355B2 (en) 2007-06-26 2009-12-29 Hewlett-Packard Development Company, L.P. Electric-field-enhancement structure and detection apparatus using same
JP5080186B2 (ja) 2007-09-26 2012-11-21 富士フイルム株式会社 分子分析光検出方法およびそれに用いられる分子分析光検出装置、並びにサンプルプレート
JP5175584B2 (ja) 2008-03-13 2013-04-03 地方独立行政法人 東京都立産業技術研究センター 局所表面プラズモン共鳴イメージング装置
US8247216B2 (en) 2008-09-30 2012-08-21 Pacific Biosciences Of California, Inc. Ultra-high multiplex analytical systems and methods
US8259381B2 (en) * 2009-06-05 2012-09-04 Exelis Inc. Phase-change materials and optical limiting devices utilizing phase-change materials
JP5621394B2 (ja) 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2325635B1 (en) 2009-11-19 2017-05-03 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2537053B1 (en) 2010-02-19 2016-11-02 Pacific Biosciences of California, Inc. An analytical device comprising an optode array chip
EP2372348A1 (en) 2010-03-22 2011-10-05 Imec Methods and systems for surface enhanced optical detection
US8358419B2 (en) 2011-04-05 2013-01-22 Integrated Plasmonics Corporation Integrated plasmonic sensing device and apparatus
EP2769214B1 (en) 2011-10-18 2019-05-22 Hewlett-Packard Development Company, L.P. Molecular sensing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006003149A (ja) * 2004-06-16 2006-01-05 Nippon Telegr & Teleph Corp <Ntt> Ｓｐｒセンサーおよび屈折率測定方法
JP2009085724A (ja) * 2007-09-28 2009-04-23 Canon Inc 標的物質検出装置、及び標的物質検出方法
JP2009115492A (ja) * 2007-11-02 2009-05-28 Canon Inc 化学センサ素子、センシング装置およびセンシング方法
JP2010256161A (ja) * 2009-04-24 2010-11-11 Konica Minolta Holdings Inc プラズモン励起センサおよびそれを用いたアッセイ法

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