WO2013161860A1 - Dispositif et procédé de contrôle non destructif de semiconducteurs - Google Patents

Dispositif et procédé de contrôle non destructif de semiconducteurs Download PDF

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WO2013161860A1
WO2013161860A1 PCT/JP2013/062025 JP2013062025W WO2013161860A1 WO 2013161860 A1 WO2013161860 A1 WO 2013161860A1 JP 2013062025 W JP2013062025 W JP 2013062025W WO 2013161860 A1 WO2013161860 A1 WO 2013161860A1
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time
semiconductor
layer
electromagnetic wave
semiconductor wafer
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PCT/JP2013/062025
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English (en)
Japanese (ja)
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利彦 紀和
塚田　啓二
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国立大学法人岡山大学
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Priority to JP2014512638A priority Critical patent/JP5916023B2/ja
Publication of WO2013161860A1 publication Critical patent/WO2013161860A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention provides a non-destructive electronic property information of each layer of a laminated structure and an electronic property information of each interlayer interface by irradiating a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device with a laser beam.
  • the present invention relates to a semiconductor non-destructive inspection apparatus and a semiconductor non-destructive inspection method that are obtained in the above.
  • LSI miniaturization technology has been advanced by scaling (proportional reduction) so far, but it is difficult to further miniaturize LSI with scaling technology alone. Therefore, as a next-generation semiconductor technology, post-scaling technology capable of further miniaturization of LSI has been studied, and specifically, carrier mobility control by strained Si and the like can be cited as one of them.
  • a next-generation semiconductor device is realized by such a next-generation semiconductor technology, more advanced semiconductor inspection technology and semiconductor evaluation technology than before are also required.
  • a conventionally known inspection apparatus and inspection method for inspecting a semiconductor wafer, a semiconductor device (semiconductor integrated circuit), etc. a technique for performing non-destructive inspection using a laser beam is known (for example, Patent Documents). 1 to 4).
  • Patent Document 1 and Patent Document 2 the light emitted from the SiC wafer is detected by a spectroscope by irradiating the SiC wafer made of a silicon carbide (SiC) semiconductor with a laser beam, and based on the measured light intensity.
  • a spectroscope by irradiating the SiC wafer made of a silicon carbide (SiC) semiconductor with a laser beam, and based on the measured light intensity.
  • Patent Document 3 in a semiconductor device (semiconductor integrated circuit) that maintains a predetermined voltage application state, an ultrashort pulse laser is irradiated onto a two-dimensional circuit of the semiconductor device, and electromagnetic waves emitted from the irradiation position are detected, An integrated circuit disconnection inspection method and apparatus for detecting disconnection of an irradiation position in a non-contact manner based on the presence or absence or intensity of the electromagnetic wave is disclosed.
  • Patent Document 4 an electric field distribution is detected from a time waveform of an electromagnetic wave radiated from an irradiation position by irradiating an ultrashort pulse laser beam to a place where a built-in electric field is generated such as a pn junction or a metal semiconductor interface in a semiconductor device.
  • a method and apparatus for performing fault diagnosis is disclosed.
  • Patent Documents 1 and 2 when light emission from the semiconductor wafer due to laser light irradiation does not occur, that is, in the case of a semiconductor wafer having no defects on the semiconductor surface, details other than the presence or absence of defects on the semiconductor surface. The inspection could not be performed.
  • Patent Document 3 it is necessary to provide an electrode structure for applying a voltage to the semiconductor device and to hold the semiconductor device in a predetermined voltage application state when performing the inspection. For example, it could not be applied to a semiconductor wafer itself used for manufacturing a semiconductor device.
  • the conventional semiconductor inspection technology when electromagnetic waves are generated simultaneously from several places in the depth direction (stacking direction) of a laminated structure such as a semiconductor wafer, the electromagnetic waves cannot be analyzed, and the inspection object is also an electrode. The structure and the pn junction are limited, and the semiconductor inspection apparatus lacks versatility. Further, in realizing the next generation semiconductor technology (post-scaling technology), it is necessary to improve the semiconductor inspection technology. For example, in the case of a semiconductor wafer having a laminated structure, the depth direction of the semiconductor wafer (lamination direction) It is desirable to obtain electronic physical property information on each layer and electronic physical property information on each interlayer interface. However, the conventional semiconductor inspection technology has not been able to obtain electronic physical property information of each layer of the multilayer structure and electronic physical property information at each interlayer interface in a nondestructive manner.
  • the present invention has been made to solve the above-described problems. From a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device, information on electronic physical properties of each layer of the laminated structure or electrons at each interlayer interface is provided. It is an object of the present invention to provide a semiconductor nondestructive inspection apparatus and a semiconductor nondestructive inspection method capable of acquiring physical property information.
  • a semiconductor non-destructive inspection apparatus that irradiates a laminated structure including a semiconductor layer with a pulsed laser beam having a predetermined wavelength and inspects the laminated structure non-destructively by an electromagnetic wave emitted from the pulse laser light irradiation position.
  • Laser beam splitting means for splitting the pulse laser beam into probe light and pump light; Means for radiating the electromagnetic wave from the pump light irradiation position by irradiating the laminated structure with the pump light; A detection element that receives the electromagnetic wave emitted from the pump light irradiation position and generates a current corresponding to the amplitude intensity of the incident electromagnetic wave; A current amplifier connected to the detection element and converting a current generated in the detection element into a voltage; A lock-in amplifier that is connected to the current amplifier and converts the voltage converted by the current amplifier into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave; A time delay means arranged in the optical path of the probe light and capable of periodically delaying the time that the electromagnetic wave is incident on the detection element; By comparing the time-varying voltage signal with the time-varying voltage signal of each single-layer structure constituting the stacked structure prepared in advance as reference data, the electrons of each layer of the stacked structure are compared. Physical property information acquisition means for
  • the frequency component of the voltage signal that changes with time of the stacked structure and the frequency component of the voltage signal that changes with time of each single-layer structure that forms the stacked structure prepared in advance as reference data are calculated.
  • the physical property information acquisition means compares the time-dependent frequency signal frequency component of the multilayer structure with the time-varying voltage signal frequency component of each of the single-layer structures. It is a semiconductor nondestructive inspection apparatus that acquires electronic physical property information of each layer of a structure or electronic physical property information of each interlayer interface.
  • the semiconductor nondestructive inspection apparatus further includes wavelength changing means for changing a center wavelength of the pulse laser beam.
  • the semiconductor nondestructive inspection apparatus further includes a scanning unit that irradiates the pump structure with the pump light and performs two-dimensional scanning.
  • the semiconductor nondestructive inspection apparatus further includes a mechanism for rotating the polarization direction of the pulsed laser light to an arbitrary angle.
  • the laminated structure including the semiconductor layer is irradiated with pulsed laser light having a predetermined wavelength, and the laminated structure is made non-magnetic by electromagnetic waves radiated from the irradiation position of the pulsed laser light.
  • a semiconductor nondestructive inspection method for inspecting by destruction A splitting step of splitting the pulsed laser light into probe light and pump light; An incident step of irradiating the laminated structure with the pump light, condensing electromagnetic waves radiated from the laminated structure, and entering the detection element; A probe light irradiation step of irradiating the detection element in synchronization with the incidence of the pulsed electromagnetic wave emitted by the pump light while delaying the probe light at a predetermined period of time, By detecting the amplitude intensity of the pulse electromagnetic wave due to the pump light incident on the detection element at the time of irradiation of the probe light, obtaining the amplitude intensity of the plurality of pulse electromagnetic waves having different delay times in the laminated structure, A time-series waveform generating step for generating a time-series waveform of the pulse electromagnetic wave in the laminated structure; By comparing the time-series waveform belonging to the laminated structure with the time-series waveform belonging to each single-layer structure constituting the laminated structure prepared
  • a signal including electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface is obtained in a non-destructive non-contact manner. can do.
  • FIG. 1 Schematic which shows the semiconductor nondestructive inspection apparatus which concerns on one Embodiment of this invention.
  • FIG. 1 The figure which normalized each time series waveform shown in FIG.
  • FIG. 1 shows an embodiment of a semiconductor nondestructive inspection apparatus according to the present invention.
  • the semiconductor nondestructive inspection apparatus 1 irradiates a pulsed laser beam having a predetermined wavelength onto a semiconductor wafer 5 that is a laminated structure including a semiconductor layer, and analyzes a pulsed electromagnetic wave 10 emitted from the pulsed laser beam irradiation position.
  • This is a nondestructive inspection apparatus for inspecting the semiconductor wafer 5 in a nondestructive and noncontact manner.
  • the “laminated structure including a semiconductor layer” is a stacked structure including at least one semiconductor layer, and refers to, for example, a semiconductor wafer, a semiconductor device, a semiconductor element, or the like having a stacked structure. .
  • the semiconductor nondestructive inspection apparatus 1 includes a laser beam splitting means (beam splitter 14) that splits a pulse laser beam 9 irradiated from a pulse laser light source 2 into a probe beam L1 and a pump beam L2, and one surface of the semiconductor wafer 5
  • the means for radiating the pulse electromagnetic wave 10 from the irradiation position of the pump light L2 (pulse laser light source 2)
  • the semiconductor wafer 5 is irradiated with the pump light L2
  • a scanning means scanning table 7, pulsed laser light source 2) for two-dimensional scanning, and amplitude intensity of the pulsed electromagnetic wave 10 emitted from the irradiation position of the pump light L2 on the semiconductor wafer 5 are detected, and the pulsed electromagnetic wave 10 Detecting / converting means (detecting / converting device 4) for converting to a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of Time delay means 15 arranged in the
  • the detection / conversion means receives the pulse electromagnetic wave 10 emitted from the irradiation position of the pump light L2, and responds to the amplitude intensity of the incident pulse electromagnetic wave 10.
  • a detection element 19 that generates a current
  • a current amplifier 27 that is connected to the detection element 19 and converts the current generated in the detection element 19 into a voltage
  • a lock-in amplifier 28 for converting the voltage into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10.
  • the time delay means 15 is arranged in the optical path of the probe light L1, and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19.
  • the “electronic physical property information” in the present invention is information such as physical property values relating to solid electronic physical properties in the “laminated structure including a semiconductor layer” such as the semiconductor wafer described above.
  • Such “electronic property information” is not particularly limited, but for example, semiconductor carrier concentration, carrier (electron, hole) mobility, carrier lifetime, atomic arrangement (information on crystal orientation), effective Examples include mass (m * ) and interlayer electric field distribution.
  • E emission is the electric field vector of the electromagnetic wave
  • J is the photocurrent density vector
  • n is the density of the photoexcited electron / hole pair
  • e is the elementary charge amount
  • v is the light
  • the drift velocity ⁇ of the electron-hole pair accelerated by the electric field E local in the semiconductor at the irradiated position is the charge mobility.
  • the amplitude intensity of the generated electromagnetic wave is proportional to the electric field E local in the semiconductor at the position irradiated with light.
  • FIG. 2 is a schematic diagram of the semiconductor wafer 5.
  • the semiconductor wafer 5 has a disk shape and a laminated structure.
  • the semiconductor wafer 5 is formed by a p-Si substrate (p-type silicon substrate), a Si buffer layer (hereinafter referred to as an Si layer) formed by homoepitaxial growth on the p-Si substrate, and an epitaxial growth on the Si layer.
  • An SiGe layer formed. That is, the semiconductor wafer 5 is formed to be in contact with a p-Si substrate, one end surface (the upper end surface in FIG. 2) of the p-Si substrate, and has a predetermined thickness, and the Si layer And an SiGe layer having a predetermined thickness formed so as to abut one end face (the upper end face in FIG. 2).
  • the p-Si substrate is a substrate having a sufficient thickness as compared with the Si layer and the SiGe layer and stably holding the Si layer and the SiGe layer.
  • FIG. 3 is a diagram showing the SIMS evaluation results for the semiconductor wafer 5, where the horizontal axis indicates the depth (nm), the right side of the vertical axis is Ge (germanium) concentration (atom%), and the left side of the vertical axis is B (boron) concentration (atom%) is shown. As shown in FIG. 3, the B concentration is high at the interface F1 between the SiGe layer and the Si layer and at the interface F2 between the Si layer and the p-Si substrate.
  • FIG. 4 is a diagram showing the energy band structure of the semiconductor wafer 5, where the horizontal axis indicates the position (depth direction) and the vertical axis indicates the energy. Moreover, EC in the figure is a conduction band, and EV is a valence band.
  • a depletion layer is formed at each interface that is a boundary of the substrate.
  • the depletion layer is a region where no carrier exists, and a local electric field E (local electric field E I near the interface F1 and local electric field E II near the interface F2) is formed in the depletion layer. Accordingly, an electric field constantly exists in the depletion layer without applying a voltage from the outside.
  • this depletion layer is irradiated with light to generate electron / hole pairs, electromagnetic waves are generated according to the equation (1). That is, a depletion layer is formed in each of the interface F1 between the SiGe layer and the Si layer and the interface F2 between the Si layer and the p-Si substrate, and when each depletion layer is irradiated with light, an electron-hole pair is generated. , (1), electromagnetic waves are radiated from the interfaces F1 and F2.
  • E I and E II are formed.
  • the directions and magnitudes of the local electric fields E I and E II vary depending on the physical state of the interface that is a boundary between the layers in the semiconductor wafer 5 (for example, the B contamination state of the interfaces F1 and F2 in the semiconductor wafer 5). Further, not only the physical state of the interface but also the physical state derived from each layer of the semiconductor wafer 5 (for example, the Ge concentration in the SiGe layer in the semiconductor wafer 5).
  • the directions and magnitudes of the local electric fields E I and E II change depending on the physical state of the interface and the physical state of each layer, and the amplitude intensity of the electromagnetic wave radiated during laser light irradiation also changes accordingly. That is, the amplitude intensity of the electromagnetic wave represents a change in the physical property state of each layer or each interlayer interface in the semiconductor wafer 5.
  • the SIMS evaluation result shown in FIG. 3 and the energy band structure shown in FIG. 4 correspond to each other, and the interface shown in FIG. 4 depends on the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II Each of the amplitude intensities also changes.
  • FIG. 4 shows the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II
  • Each of the amplitude intensities also changes.
  • a region surrounded by dotted circles is a region where local electric fields E I and E II are formed, and a THz radiation region where a pulsed electromagnetic wave (terahertz wave) is emitted when irradiated with pulsed laser light. It becomes.
  • the semiconductor wafer 5 includes three layers including the p-Si substrate, and there are two interfaces. For example, when the semiconductor wafer 5 is irradiated with pulsed laser light, the pulse electromagnetic wave radiated from the irradiation position is THz radiation I near the interface F1 and THz radiation II near the interface F2 in the case of the semiconductor wafer 5 shown in FIG. Observed as the sum of. Further, when there is no SiGe layer in the semiconductor wafer 5 shown in FIG.
  • the present inventors have found a new technique capable of inspecting a laminated structure including a semiconductor layer such as a semiconductor wafer by performing analysis in association with the concentration of impurities in the wafer.
  • the physical property information to be analyzed in association with the voltage signal is not limited to the substance concentration existing in each interface or each layer of the laminated structure including the semiconductor layer as described above, but is a carrier life that is a semiconductor physical property, Electron mobility, interlayer electric field distribution, crystal direction, and the like are also included.
  • the amplitude intensity of the pulsed electromagnetic wave radiated from the irradiation position is measured by irradiating the semiconductor laser 5 that is a laminated structure including the semiconductor layer with the pulse laser light 9, and the amplitude intensity is measured.
  • FIG. 1 is a schematic view of a semiconductor nondestructive inspection apparatus of this embodiment.
  • the inspection device 1 of this embodiment includes an irradiation device (optical system), a detection / conversion device 4, and a control / analysis device 8.
  • the irradiation device mainly includes a pulse laser light source 2, a beam splitter 14, a time delay unit 15, an optical chopper 16, a pump light condensing unit 18, and a scanning table 7.
  • the irradiation device has a function of irradiating the semiconductor wafer 5 with pulsed laser light 9 (pump light L2) having a predetermined wavelength.
  • pulsed laser light 9 pump light L2
  • the configuration of the mirror and the like used to change the direction of the pulse laser beam 9 is not limited to the present embodiment. Considering the arrangement of each component, for example, the number of mirrors may be increased as appropriate. You can change the configuration.
  • the irradiation apparatus has a scanning means for two-dimensional scanning by irradiating the pulse laser beam 9. That is, the scanning unit directs the pulse laser beam 9 toward the semiconductor wafer 5 while reciprocating the semiconductor wafer 5 on the scanning stage 7 (XY automatic stage) using a driving device (not shown) on the scanning stage 7. It has a function to irradiate. By irradiating the semiconductor wafer 5 with the pulsed laser light 9 by the scanning means and scanning two-dimensionally, it is possible to acquire the distribution of the electronic property information of the stacked structure.
  • the pump light L ⁇ b> 2 that is a split light of the pulse laser light 9 is irradiated onto the laser light irradiation surface of the semiconductor wafer 5, and is a semiconductor fixed to the scanning table 7.
  • the semiconductor wafer 5 is moved to a position where the pump light L2 is irradiated so that the laser light irradiation surface of the semiconductor wafer 5 is scanned.
  • a pulsed electromagnetic wave 10 is continuously emitted from the laser light irradiation position.
  • the scanning configuration is not limited to the configuration of this embodiment, and the pulse laser beam 9 is scanned two-dimensionally on the semiconductor wafer 5 by a swinging or rotating mirror (not shown) or the pulse laser light source 2 Or may be irradiated.
  • the plane formed by the path of the pulse laser beam 9 and the pulse electromagnetic wave 10 is a substantially horizontal plane, that is, FIG. 1 is a top view configuration.
  • the arrangement is such that the pulse laser beam 9 and the pulse electromagnetic wave 10 form a substantially horizontal plane, but it is desirable to appropriately set the shape and fixing method of each device, and it is necessary to configure the substantially horizontal plane. Absent.
  • the incident angle of the pump light L2 that is a split light of the pulse laser light 9 to the semiconductor wafer 5 is an angle at which the wavelength of the pulse laser light 9 (pump light L2) is most absorbed by the semiconductor wafer 5.
  • the pulse laser light source 2 is a means for irradiating the pulse laser light 9.
  • the pulse laser light source 2 is means for radiating a pulse electromagnetic wave 10 having an amplitude intensity depending on physical property information at the irradiation position by irradiating the laser beam incident surface of the semiconductor wafer 5 with the pulse laser light 9.
  • a femtosecond titanium sapphire laser (repetition frequency 82 MHz, output 890 MHz, center wavelength 780 nm, pulse width 100 fs) is used as the pulse laser light source 2 in this embodiment.
  • the pulse laser light source 2 may be a mode-locked titanium sapphire laser or a femtosecond fiber laser capable of generating the pulse laser light 9 as in this embodiment.
  • the electromagnetic wave when exciting the electromagnetic wave, the electromagnetic wave can be excited without significantly affecting the semiconductor wafer 5 by using the pulse laser beam 9 having a small time width as a light source.
  • the pulse laser beam 9 having a small time width as a light source.
  • time-resolved measurement with high time resolution becomes possible, and the semiconductor wafer 5 to be inspected can be observed in real time.
  • the maximum optical pulse width that does not affect the semiconductor wafer 5 can be estimated to be about 10 picoseconds.
  • a femtosecond laser there is an effect that the influence of heating by the laser can be minimized.
  • the beam splitter 14 is means for dividing the incident pulse laser light 9 into the probe light L1 and the pump light L2.
  • the pump light L2 can be divided in the vertical direction with respect to the probe light L1 traveling straight.
  • a half mirror is used.
  • the probe light L1 is light used to acquire synchronization at the time of inspection of the semiconductor wafer 5 to be inspected, and is transmitted from the beam splitter 14 via the time delay means 15, the mirror 31, the mirror 34, and the lens 35.
  • the detection / conversion device 4 (detection element 19 described later) is irradiated.
  • the pump light L ⁇ b> 2 is applied to the irradiation surface of the semiconductor wafer 5 from the beam splitter 14 through the mirror 29, the optical chopper 16, and the mirror 30.
  • the time delay means 15 is a means that is arranged in the optical path of the probe light L1 and can periodically delay the time when the amplitude intensity is detected by the detection / conversion device 4. That is, the time delay means 15 is a means that is arranged in the optical path of the probe light and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19.
  • the time delay means 15 includes a movable mirror 15a that can be periodically moved in a predetermined direction by a driving means (not shown), and a stage 15b that holds the movable mirror 15a.
  • the time delay unit 15 can reflect the probe light L1 incident on the time delay unit 15 in a direction parallel to and opposite to the incident direction of the probe light L1.
  • the time delay means 15 adjusts the optical path length of the probe light L1 by optically delaying the movable mirror 15a by reciprocating the movable mirror 15a in parallel and periodically with respect to the incident direction of the probe light L1. It is possible.
  • the driving means is controlled by the control / analysis device 8.
  • the time delay means 15 periodically detects the probe light L1 provided with a time delay amount at a predetermined time interval by moving the movable mirror 15a for adjusting the optical path length of the probe light L1. 4 (detection element 19 to be described later).
  • the optical chopper 16 is disposed in the optical path of the pump light L2, and can chop the pump light L2 at a predetermined frequency.
  • the detection / conversion device 4 is means for detecting the amplitude intensity of the pulse electromagnetic wave 10 emitted from the pulse laser beam irradiation position of the semiconductor wafer 5. As shown in FIG. 1, the detection / conversion device 4 includes a detection element 19 that is an electromagnetic wave detection unit, a pump light condensing unit 18, and a conversion unit.
  • the detection / conversion device 4 condenses the pulsed electromagnetic wave 10 radiated from the semiconductor wafer 5 by an off-axis parabolic mirror that is the pump light condensing means 18, detects the condensed pulsed electromagnetic wave 10, This is converted into a time-varying voltage signal (hereinafter also referred to as a time series waveform) corresponding to the time waveform of the amplitude intensity (electric field amplitude) of the pulse electromagnetic wave 10.
  • a time-varying voltage signal hereinafter also referred to as a time series waveform
  • the detection element 19 is an element that receives the pulse electromagnetic wave 10 emitted from the irradiation position of the pump light L2 and generates a current corresponding to the amplitude intensity of the incident pulse electromagnetic wave 10.
  • the detection element 19 is, for example, a photoconductive antenna or the like, and is arranged so that the pulse electromagnetic wave 10 generated from the irradiation position of the pump light L2 on the irradiation surface of the semiconductor wafer 5 can enter, and in synchronization with the incidence of the pulse electromagnetic wave 10, the probe 19 When the light L1 is irradiated onto a predetermined position of the detection element 19, a current proportional to the amplitude intensity of the pulse electromagnetic wave 10 incident upon the irradiation is generated.
  • the pump light condensing means 18 is a pair of off-axis parabolic mirrors, and is arranged between the semiconductor wafer 5 to be inspected and the detection element, and collects the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5. Light is applied to one end of the detection element 19.
  • the conversion means includes a current amplifier 27 connected to the detection element 19 and a lock-in amplifier 28 connected to the current amplifier 27.
  • the current amplifier 27 is connected to the detection element 19 and converts a current generated in the detection element 19 into a voltage.
  • the lock-in amplifier 28 is connected to the current amplifier 27 and converts the voltage converted by the current amplifier 27 into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10.
  • the lock-in amplifier 28 is connected to the optical chopper 16. In this conversion means, by measuring the current generated in the detection element 19, it is possible to detect the amplitude intensity of the pulsed electromagnetic wave 10 incident when the probe light L1 is applied to the detection element 19.
  • the frequency component included in the pulse electromagnetic wave 10 is included in a range from 10 gigahertz to 100 terahertz, so that the detection / conversion device 4 having a general configuration can be used.
  • the terahertz region is preferable to the gigahertz region as the pulse electromagnetic wave 10 to be used.
  • the electromagnetic wave can be easily guided to the detector by an optical technique using a mirror, a lens, or the like.
  • the high-frequency region is more so-called light than the terahertz region. However, when using light, it is necessary to provide a means for distinguishing ambient light from signal light. It is preferable to use electromagnetic waves in the terahertz region rather than using electromagnetic waves having a higher frequency than the terahertz region.
  • the control / analysis device 8 generates a time series waveform of the amplitude intensity (voltage value) of the pulse electromagnetic wave 10 from the voltage signal converted by the conversion means of the detection / conversion device 4, or the generated time series waveform.
  • This is a device for performing a predetermined analysis using
  • the control / analysis device 8 is a computer having an image display unit that enables execution of control and analysis described in this specification, and irradiation is performed via a control signal line (not shown). Control of the device (optical system), the scanning stage 7, the detection / conversion device 4, and the pulsed laser light source 2 is also performed.
  • the control / analysis device 8 is a device capable of displaying (imaging) a time-series waveform of the amplitude intensity of the pulse electromagnetic wave 10 and an analysis result using them as a map or an image.
  • the predetermined analysis includes image processing based on a time-series waveform of the amplitude intensity of the pulse electromagnetic wave 10 and arithmetic processing such as predetermined Fourier transform.
  • control / analysis device 8 has physical property information acquisition means.
  • the physical property information acquisition means compares the time series waveform attributed to the semiconductor wafer 5 with the time series waveform attributed to each single layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is means for acquiring electronic physical property information of each layer of the wafer 5 or electronic physical property information of each interlayer interface.
  • the control / analysis device 8 compares the time-series waveform attributed to the semiconductor wafer 5 with the time-series waveform attributed to each single-layer structure of the semiconductor wafer 5, whereby the electronic physical properties of each layer of the semiconductor wafer 5 are compared.
  • the information or the electronic physical property information of each interlayer interface is a means for obtaining a signal including information on carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction.
  • the control / analysis device 8 is a means for determining the quality of the semiconductor wafer 5 based on the electronic property information.
  • the control / analysis device 8 calculates a frequency component of the time series waveform of the semiconductor wafer 5 and a frequency component of the time series waveform of each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It has further. Thereby, the physical property information acquisition means compares the frequency component of the time series waveform by the semiconductor wafer 5 with the frequency component of the time series waveform by each single layer structure constituting the semiconductor wafer 5 acquired as the reference data. By doing so, the electronic property information of each layer of the semiconductor wafer 5 or the electronic property information of each interlayer interface can be acquired.
  • control / analysis apparatus 8 calculates a frequency component belonging to the semiconductor wafer 5 by performing Fourier transform on the time-series waveform of the semiconductor wafer 5 and constitutes a single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It is possible to calculate a frequency component by performing Fourier transform on a time-series waveform by the body and compare each frequency component.
  • the control / analysis device 8 further includes a mechanism for rotating the polarization direction of the pulsed laser light 9 to an arbitrary angle. By comparing the two time series waveforms of the semiconductor wafer 5 obtained when the semiconductor wafer 5 is irradiated with the pulsed laser light 9 and set at any two angles by the mechanism, the semiconductor wafer 5 is compared. It is possible to obtain information on the crystal orientation of each layer.
  • the control / analysis device 8 further includes wavelength changing means for changing the center wavelength of the pulse laser beam 9.
  • the pulsed laser light 9 set to have at least two wavelengths by the wavelength changing means is irradiated onto the semiconductor wafer 5, and two time-series waveforms by the laminated structure obtained from the pulsed laser light irradiation position are obtained.
  • the center wavelength may be changed so that the wavelength is longer than 1 ⁇ m (1000 nm) and shorter than 1 ⁇ m.
  • the control / analysis device 8 causes the pulsed laser light source 2 to irradiate the semiconductor wafer 5 with pulsed laser light 9.
  • the pulse electromagnetic wave 10 generated by the irradiation of the pulsed laser light 9 is detected by the detection / conversion device 4, and the control / analysis device 8 takes in the detection result and detects the amplitude intensity of the pulse electromagnetic wave 10.
  • the control / analysis apparatus 8 controls the scanning table 7 while continuing to detect the pulse electromagnetic wave 10 on the semiconductor wafer 5 and irradiates the pulse laser beam 9 while moving the semiconductor wafer 5.
  • the semiconductor nondestructive inspection apparatus 1 includes means (scanning table 7, pulse laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9, and the pulsed laser light 9 is two-dimensionally provided.
  • the pulse laser beam 9 is continuously irradiated onto the semiconductor wafer 5 by means of scanning and irradiating means (scanning table 7, pulse laser light source 2), and the amplitude of the pulse electromagnetic wave 10 generated by the irradiation. The intensity can be measured continuously.
  • the semiconductor nondestructive inspection apparatus 1 in this embodiment includes means (scanning table 7, pulsed laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9 when performing measurement. It is not always necessary to perform scanning, and the necessity of scanning may be determined according to the measurement environment and used as appropriate.
  • the control / analysis device 8 acquires a time-varying voltage signal (time series waveform) corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10, analyzes the time series waveform, and analyzes the semiconductor wafer 5. It functions as a means to acquire the electronic physical property information of each layer and the electronic physical property information of each interlayer interface, and by analyzing the time series waveform, as the electronic physical property information, for example, carrier lifetime, mobility, interlayer A signal including information on the electric field distribution and crystal orientation is obtained.
  • the semiconductor wafer 5 that is the inspection target is inspected by the above apparatus configuration and principle.
  • the semiconductor wafer 5 is irradiated with a pulsed laser beam 9 having a predetermined wavelength, and the pulsed electromagnetic wave 10 emitted from the irradiation position of the pulsed laser beam 9.
  • a nondestructive semiconductor nondestructive inspection method that proceeds in accordance with the flow shown in FIG. 6 and includes a laser beam splitting step S10, an incident step S20, a probe light irradiation step S30, and time-series waveform generation. It has process S40 and physical property information acquisition process S50.
  • each step will be specifically described.
  • Laser beam splitting step S10 is a step of splitting the pulse laser beam 9 into probe light L1 and pump light L2.
  • the pulse laser beam 9 output from the pulse laser beam source 2 in FIG. 1 is converted into two pulse laser beams 9 by a beam splitter 14 (a half mirror in this embodiment).
  • the light is divided into light L1 and pump light L2.
  • the incident step S20 is a step of irradiating the semiconductor wafer 5 with the pump light L2, condensing the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5, and causing the pulsed electromagnetic wave 10 to enter the detection element 19 which is one of the detection means. is there.
  • the pump light L ⁇ b> 2 that is one of the pulsed laser beams 9 divided by the beam splitter 14 is allowed to pass through the mirror 29, the optical chopper 16, and the mirror 30, and the pump light L ⁇ b> 2 that has passed through the optical chopper 16. Is irradiated onto the semiconductor wafer 5. Then, the pulse electromagnetic wave 10 radiated from the irradiation position of the pump light L2 is condensed to one end of the detection element 19 by the off-axis parabolic mirror which is the pump light condensing means 18, and the pump light L2 is collected by the detection element 19 The amplitude intensity of the pulse electromagnetic wave 10 generated by the irradiation is detected.
  • Probe light irradiation step S30 is a step of irradiating the detection element 19 with the probe light L1 passing through the time delay means 15 and synchronizing with the incidence of the pulsed electromagnetic wave 10 generated by the pump light L2. That is, the probe light irradiation step S30 irradiates the detection element 19 with the probe light L1 in synchronization with the incidence of the pulsed electromagnetic wave 10 emitted by the pump light L2 while being delayed for a predetermined period. It is a process.
  • the divided probe light L ⁇ b> 1 that is pulsed laser light passes through the time delay means 15, the mirror 31, the mirror 34, and the lens 35 to the other end of the detection element 19. Irradiated.
  • the probe light L ⁇ b> 1 is irradiated in synchronization with the pulse electromagnetic wave 10 generated from the semiconductor wafer 5 entering the detection element 19.
  • the time-series waveform generation step S40 detects a plurality of different delay times in the semiconductor wafer 5 by detecting the amplitude intensity of the pulse electromagnetic wave 10 by the pump light L2 incident on the detection element 19 at the time of irradiation of the probe light L1. In this step, the amplitude intensity of the pulse electromagnetic wave 10 is acquired and a time-series waveform of the pulse electromagnetic wave 10 in the semiconductor wafer 5 is generated. That is, the time-series waveform generation step S40 acquires the amplitude intensities of the plurality of pulse electromagnetic waves 10 having different delay times synchronized with the probe light L1, and generates a time-series waveform of the pulse electromagnetic waves 10 in the semiconductor wafer 5. It is.
  • the time delay unit 15 In FIG. 2, the probe light L1 is incident and reflected by the movable mirror 15a that is movably arranged in a predetermined direction (in the present embodiment, parallel to the probe light L1). Further, the control / analysis device 8 periodically reciprocates the movable mirror 15a in a predetermined direction at a predetermined frequency, thereby optically delaying the time for the probe light L1 to reach the detection element 19.
  • control / analysis device 8 delays the time when the probe light L1 is incident on the detection element 19 while periodically changing the time when the probe light L1 reaches the detection element 19 by the time delay means 15.
  • the amplitude intensity of the pulse electromagnetic wave 10 when the probe light L1 is incident can be acquired in a predetermined time series (see FIG. 7A).
  • the control / analyzer 8 generates a time-series waveform of amplitude intensity based on the amplitude intensity of the detected pulsed electromagnetic wave 10.
  • the detection element 19 is pumped by the semiconductor wafer 5.
  • the pulse electromagnetic wave 10 generated from the irradiation position of the light L2 is condensed on the detection element 19, and the probe light L1 is irradiated to a predetermined position of the detection element 19 in synchronization with the incidence of the pulse electromagnetic wave 10, the irradiation of the probe light L1 is performed.
  • a current proportional to the electric field strength (amplitude strength) of the incident pulsed electromagnetic wave 10 is sometimes generated.
  • the current is converted into a voltage by the current amplifier 27, and then lock-in detection is performed by the lock-in amplifier 28 in synchronization with the chopping of the optical chopper 16.
  • the lock-in detection value is input to a control / analysis device (computer) 8. That is, it is possible to detect the amplitude intensity of the pulse electromagnetic wave 10 that is incident when the probe light L1 is applied to the detection element 19.
  • the time delay ⁇ which is the time until the probe light L1 reaches the detection element 19, is set as the time delay.
  • the horizontal axis of FIG.7 (b) shows time delay (DELTA) (tau).
  • the physical property information acquisition step S50 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is a step of obtaining electronic physical property information of each layer of the semiconductor wafer 5 or electronic physical property information of each interlayer interface.
  • the control / analysis apparatus 8 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure of the semiconductor wafer 5, whereby the semiconductor wafer 5 is a step of obtaining a signal including information relating to, for example, carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction, as the electronic property information of each layer or the electronic property information of each interlayer interface.
  • the results of inspecting a predetermined semiconductor wafer using the semiconductor nondestructive inspection apparatus 1 are shown below.
  • SiGe layers having different Ge concentrations were produced as semiconductor wafers to be inspected.
  • a sample having a Ge composition of 0% (sample name K-6-91, a sample described as Homoepi in FIGS. 9 and 10) is composed of a Si layer in which no SiGe layer is formed and a p-Si substrate. It will be. 9 and 10 show the results of inspecting these samples by the semiconductor nondestructive inspection apparatus 1 described above.
  • the sample composed of the Si layer on which the SiGe layer is not formed and the p-Si substrate is a one-layer structure in which only one Si layer is formed on the p-Si substrate. Is called a single-layer structure.
  • FIG. 9 is a comparison of time series waveforms of samples having different Ge compositions of the SiGe layer, with the horizontal axis representing time (ps) and the vertical axis representing amplitude intensity (mV).
  • time-series waveforms of Ge composition 9%, 7%, 3% and no SiGe layer are arranged in order from the top.
  • the time-series waveform varies greatly depending on the presence or absence of Ge. That is, the time-series waveform is greatly different between a sample having a SiGe layer (Ge composition: 9%, 7%, 3%) and a sample having only a Si layer having no SiGe layer. And it can confirm that a waveform pattern changes also with the difference in Ge composition.
  • FIG. 10 shows the frequency components calculated based on the time-series waveform of each sample in FIG. 9, and the frequency components of each sample are normalized and compared.
  • the horizontal axis is frequency (THz) and the vertical axis is normalized. Amplitude intensity. Also in this case, it can be confirmed that each time-series waveform is different.
  • FIG. 11 shows image data near the center of the semiconductor wafer and image data near the edge of the semiconductor wafer, in which the amplitude intensity is image-displayed two-dimensionally for a sample having a Ge composition of 7% in the SiGe layer.
  • the amplitude intensity of the pulse electromagnetic wave In the vicinity of the central portion of the semiconductor wafer, the amplitude intensity of the pulse electromagnetic wave is uniform. In contrast, a non-uniform distribution of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer was observed.
  • FIG. 12 shows the results of further detailed verification of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer.
  • the lower part of FIG. 12A shows two-dimensional image data of the amplitude intensity in the vicinity of the central portion of the semiconductor wafer shown in FIG.
  • the upper diagram in FIG. 12A shows the amplitude intensity (mV) of the cross section of the upper side near the edge of the semiconductor wafer.
  • FIG. 12B shows the result of strain measurement of the SiGe layer by Raman measurement. In the Raman measurement of FIG. 12B, the strain at each position in the lateral direction of the SiGe layer is substantially uniform, whereas each position in the lateral direction of the SiGe layer shown in the upper diagram of FIG.
  • the amplitude intensity at differs greatly depending on the position in the horizontal direction (a large amplitude intensity peak exists on the right side). From this, if the semiconductor nondestructive inspection apparatus 1 of this invention is used, the SiGe physical property different from the distortion measurement by Raman can be measured. Further, the portion surrounded by the white line of the two-dimensional image data of the amplitude intensity shown in the lower diagram of FIG. 12A is a portion where the SiGe layer is peeled off, and can be clearly confirmed as a difference in amplitude intensity.
  • the electronic physical property information of each layer of the laminated structure or the electronic physical property information of each interlayer interface is included in a nondestructive and non-contact manner.
  • a signal can be acquired.
  • the present invention can be used in, for example, semiconductor inspection fields such as semiconductor wafer inspection devices and LSI inspection devices, material inspection evaluation fields such as solid material inspection devices and organic material inspection devices, and physical property physics research fields.

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Abstract

[Problème] L'invention a pour objet de réaliser un dispositif et un procédé de contrôle non destructif de semiconducteurs, capables d'acquérir, à partir d'une structure stratifiée telle qu'une tranche de semiconducteur comprenant une couche de semiconducteur, des informations de propriétés physiques électroniques de chaque couche de la structure stratifiée et des informations de propriétés physiques électroniques de chaque interface entre couches de celle-ci. [Solution] Un dispositif (1) de contrôle non destructif de semiconducteurs comporte : un moyen servant à diviser une lumière laser pulsée (9) en une lumière (L1) de sonde et une lumière (L2) de pompage ; un moyen servant à irradier une tranche (5) de semiconducteur avec la lumière (L2) de pompage pour émettre ainsi une onde électromagnétique (10) à partir d'une position d'irradiation ; un amplificateur (28) à verrouillage servant à détecter l'intensité d'amplitude de l'onde électromagnétique (10) via un élément (19) de détection et à convertir l'intensité d'amplitude en une forme d'onde en série temporelle correspondant à la forme d'onde temporelle de l'intensité d'amplitude de l'onde électromagnétique (10) ; un moyen (15) de retard temporel servant à retarder périodiquement l'instant où l'intensité d'amplitude est détectée par l'élément (19) de détection ; et un moyen d'acquisition d'informations de propriétés physiques servant à acquérir des informations de propriétés physiques électroniques de chaque couche d'une structure stratifiée et des informations de propriétés physiques électroniques de chaque interface entre couches de celle-ci en comparant la forme d'onde en série temporelle à la forme d'onde en série temporelle de chaque structure monocouche d'une structure stratifiée préparée auparavant en tant que données de référence.
PCT/JP2013/062025 2012-04-24 2013-04-24 Dispositif et procédé de contrôle non destructif de semiconducteurs WO2013161860A1 (fr)

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JP2014167443A (ja) * 2013-02-28 2014-09-11 Dainippon Screen Mfg Co Ltd 検査装置および検査方法
JP2015184170A (ja) * 2014-03-25 2015-10-22 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP2017044571A (ja) * 2015-08-26 2017-03-02 国立大学法人 岡山大学 微小磁性体を検出する方法及び装置並びに検査装置
CN110914963A (zh) * 2017-07-18 2020-03-24 浜松光子学株式会社 半导体制造方法及晶圆检查方法
JP7000198B2 (ja) 2018-02-16 2022-01-19 浜松ホトニクス株式会社 キャリア寿命測定方法及びキャリア寿命測定装置
JP2019145553A (ja) * 2018-02-16 2019-08-29 浜松ホトニクス株式会社 キャリア寿命測定方法及びキャリア寿命測定装置
KR20200121281A (ko) * 2018-02-16 2020-10-23 하마마츠 포토닉스 가부시키가이샤 캐리어 수명 측정 방법 및 캐리어 수명 측정 장치
WO2019159595A1 (fr) * 2018-02-16 2019-08-22 浜松ホトニクス株式会社 Procédé et dispositif de mesure de durée de vie de porteuse
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KR102530265B1 (ko) 2018-02-16 2023-05-09 하마마츠 포토닉스 가부시키가이샤 캐리어 수명 측정 방법 및 캐리어 수명 측정 장치
JP2020153761A (ja) * 2019-03-19 2020-09-24 株式会社Ｓｃｒｅｅｎホールディングス 検査装置、検査方法、電磁波情報処理装置、電磁波情報処理方法およびプログラム
WO2021177195A1 (fr) * 2020-03-02 2021-09-10 国立大学法人東京農工大学 Dispositif de détection de lumière et procédé de détection de lumière
JP7478479B2 (ja) 2020-03-02 2024-05-07 国立大学法人東京農工大学 光検出装置、および光検出方法
CN115821394A (zh) * 2023-01-05 2023-03-21 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种SiC晶片的检测系统及其检测方法

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