WO2013145139A1 - 電子デバイスの製造方法 - Google Patents
電子デバイスの製造方法 Download PDFInfo
- Publication number
- WO2013145139A1 WO2013145139A1 PCT/JP2012/058014 JP2012058014W WO2013145139A1 WO 2013145139 A1 WO2013145139 A1 WO 2013145139A1 JP 2012058014 W JP2012058014 W JP 2012058014W WO 2013145139 A1 WO2013145139 A1 WO 2013145139A1
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- electronic device
- partial
- substrate
- manufacturing
- coating film
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 30
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- 238000000576 coating method Methods 0.000 claims abstract description 108
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- 239000007788 liquid Substances 0.000 claims description 10
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- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical class C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
Definitions
- the present invention relates to an electronic device manufacturing method.
- an electronic device in which an element is formed on a substrate and has a coating film covering the element.
- the organic EL device includes a coating film (sealing film) that covers the organic EL element in order to seal the organic EL element on the substrate.
- the electronic device includes a connection terminal on the substrate.
- the electronic device provided with the coating film is provided on the substrate in a state where the connection terminals are exposed from the coating film.
- the manufacturing method of the organic EL device described in Patent Document 1 below is for connecting the connection terminal and the external circuit on the connection terminal after forming the anode and the connection terminal for external circuit connection on the substrate.
- a step of temporarily pressing an anisotropic conductive adhesive tape with a protective laminate and then a step of forming an organic EL element by laminating an organic layer and a cathode on the anode, above the organic EL element and the anisotropic conductive adhesive tape Forming a coating film (sealing film) on the substrate, and then removing the coating film on the anisotropic conductive adhesive tape by peeling off the protective laminate of the anisotropic conductive adhesive tape.
- An atomic layer deposition film formation method (ALD film formation method) is known as a coating film formation method capable of obtaining high sealing performance. According to this film formation method, the coating film covers the entire surface of the substrate at the time of film formation, and it is difficult for the solution to penetrate due to the high moisture resistance of the coating film. The problem is whether to expose the connection terminals on the substrate.
- a method of removing the coating film in the connection terminal region by peeling off the mask tape (in the above example, the protective laminate corresponds to the mask tape) is known.
- the process of applying the tape is complicated, and there is a problem that good productivity cannot be obtained.
- a plurality of connection terminal regions exist for each element formation region, or connection terminals Since the area is very narrow, it is difficult to apply with high accuracy in the mask tape application process, and high productivity cannot be realized.
- a narrow frame that narrows the connection terminal region is required, and when the narrow frame is achieved, a connection terminal region in which the connection terminal is formed and an element such as an organic EL element are formed.
- the element formation regions to be brought into close proximity.
- the film around the mask tape may be peeled off together, and when the connection terminal area and the element forming area are close to each other due to the narrowing of the frame, There is a concern that the sealing performance of the element is deteriorated due to peeling of the film. For this reason, in particular, in order to realize a narrow frame, it is required to accurately remove only the coating film on the connection terminal region so that the element formation region is not adversely affected.
- the present invention is an example of a problem to deal with such a problem. That is, when a coating film is formed on the substrate on which the element is formed by an ALD film forming method or the like, the coating film on the connection terminal region can be removed by a simple process, and the coating film is formed on the substrate. It is possible to obtain high productivity in the production of the electronic device to be formed, and to accurately remove only the coating film on the connection terminal region so that the element formation region is not adversely affected. Is the purpose.
- the electronic device manufacturing method of the present invention comprises at least the following configuration.
- FIG. 4 is an explanatory view showing an organic EL device manufactured by a manufacturing method according to an embodiment of the present invention (FIG. 4A is a schematic plan view, and FIG. 4B is an XX cross section in FIG. 4A). Figure).
- FIG. 1 is an explanatory view showing a method for manufacturing an electronic device according to an embodiment of the present invention.
- An electronic device manufacturing method includes a step of covering a part of a substrate 1 with a partial covering member 2, a step of forming an element 3 on the substrate 1, an element 3 and a partial covering member 2.
- a coating film 4 is formed on the substrate 1 so as to cover the substrate, and a crack is formed in the coating film 4 on the partial coating member 2.
- An element here is a component used for an electronic circuit, and includes not only active elements but also passive elements.
- organic semiconductors light emitting elements such as organic EL, inorganic EL, and LEDs, and sensor elements are also included.
- on the substrate includes not only the case of being formed directly on the substrate but also the case of being formed via another object.
- the first step (see FIG. 1A) of covering the connection terminal region 1A on the substrate 1 with the partial covering member 2 and the element 3 on the substrate 1 are performed.
- a second step of forming (see FIG. 1B), a third step of forming a coating film 4 on the substrate 1 so as to cover the element 3 (see FIG. 1C), and the partial covering member 2
- a fourth step (see FIGS. 1 (d1) and (d2)) for forming a crack in the upper coating film 4 is provided.
- the lower electrode 10 is formed on the substrate 1, and the connection terminal 11 is formed simultaneously or separately.
- a portion on the substrate 1 on which the connection terminal 11 is formed becomes a connection terminal region 1A.
- the connection terminal region 1A on the connection terminal 11 formed on the substrate or on the substrate 1 on which the connection terminal 11 is formed is covered with the partial covering member 2.
- the partial covering member 2 can be formed by itself, but the process can be simplified by forming it simultaneously with the formation of other members or in the same process. As shown in FIG. 1A, the partial covering member 2 can be formed simultaneously with or in the same process as the partition wall 12 that separates the plurality of electrodes of the element 3 from each other.
- the partial covering member 2 and the partition wall 12 are, for example, a resist layer that is patterned in a photolithography process.
- An example of a method for forming the partial covering member 2 and the partition wall 12 is to apply a photosensitive resin layer on the substrate 1 and perform exposure and development through a photomask having a pattern of the partial covering member 2 and the partition wall 12.
- the resist layer pattern of the partial covering member 2 and the partition wall 12 is formed.
- the partial covering member 2 and the partition wall 12 having the reverse tapered surfaces 2a and 12a whose side portions are directed downward can be formed by utilizing the difference in development speed caused by the difference in the exposure amount in the thickness direction of the resist layer. it can.
- the element 3 is formed on the lower electrode 10 on the substrate.
- the element 3 is formed between the partition walls 12.
- an organic EL element is formed as an example of the element 3
- the organic layer 13 is stacked on the lower electrode 10
- the upper electrode 14 is stacked thereon.
- the pattern of the barrier ribs 12 in a stripe shape in a direction intersecting the lower electrode 10
- the upper electrode 14 can be formed in a stripe pattern divided by the barrier ribs 12.
- a region where the element 3 is formed on the substrate 1 becomes an element forming region 1B.
- a coating film 4 is formed on the substrate 1 so as to cover the element 3 and the partial coating member 2.
- the coating film 4 becomes a sealing film that hermetically seals the organic EL element.
- the coating film 4 is an inorganic film, for example, and can be formed by an atomic layer deposition (ALD) method as an example.
- the coating film 4 formed by the ALD method is formed on the entire surface of the substrate 1 including the connection terminal region 1A and the element formation region 1B.
- a crack 4 A is formed in the coating film 4 on the partial coating member 2.
- the crack 4A can be formed by subjecting the partial coating member 2 and the coating film 4 on the connection terminal region 1A to ultraviolet irradiation treatment, heat treatment, or laser irradiation.
- the partially covering member 2 and the covering film 4 are made of materials having different expansion rates or shrinkage rates with respect to ultraviolet irradiation treatment, heat treatment, or laser irradiation. Internal stress is generated in the partially covering member 2 and the covering film 4 that are in contact with each other due to the difference in expansion coefficient or contraction ratio, and cracks 4A are formed in the covering film 4 having low strength.
- the partial coating member 2 is formed of a resist layer
- the coating film 4 is formed of an inorganic film
- the partial coating member 2 and the coating film 4 on the connection terminal region 1A are subjected to ultraviolet irradiation treatment.
- the partial covering member 2 exhibits a larger expansion coefficient than the covering film 4, and a crack 4 ⁇ / b> A is formed in the covering film 4.
- the crack 4A is easily formed corresponding to the acute edge of the upper end edge of the partial covering member 2.
- the crack 4 ⁇ / b> A is formed along the end of the partial covering member 2.
- ultraviolet irradiation treatment or heat treatment or laser irradiation on the partial coating member 2 and the coating film 4 may be performed directly on the coating film 4 or in FIG. 1 (d2).
- another partial coating member 2S may be laminated on the coating film 4 and applied through the other partial coating member 2S.
- Another partial covering member 2S is a member for facilitating the generation of internal stress in the coating film 4 on the partial covering member 2, and has a larger expansion rate or contraction rate than the partial covering portion 2. Alternatively, it has an expansion rate or contraction rate opposite to that of the partial covering member 2 (the partial covering member 2S contracts when the partial covering member 2 expands, and the partial covering member 2S expands when the partial covering member 2 contracts). It is preferable to select a member or the like.
- a material having a shrinkage rate that does not cause cracks in the curing process for forming the partition wall 12 is used as the material for the partition wall 12 or the partial covering member 2.
- the crack 4 ⁇ / b> A is generated, the portions other than the partial covering member 2 are shielded (masked), and the partial covering member 2 is irradiated with a stronger ultraviolet ray than when the partition wall 12 is cured.
- a laser that absorbs and generates heat with respect to the resin such as a CO 2 laser, is used to selectively irradiate the coating film 4 on the partial coating member 2 after the partition 12 is cured.
- a material having a larger expansion coefficient or contraction rate than the partition wall 12 is used. Used for.
- a pattern forming method using photolithography, printing, ink jet, or the like can be used for forming the partial covering member 2.
- a method of selectively irradiating the coating film 4 on the partial coating member 2 with ultraviolet rays or a laser, or partially heating the coating film 4 can be employed.
- FIG. 2 is a method for manufacturing an electronic device according to an embodiment of the present invention, and shows a step of removing the coating film on the connection terminal region together with the partial coating member.
- the coating film 4 on the connection terminal region 1 ⁇ / b> A is removed together with the partial coating member 2 to expose the connection terminal 11.
- the coating film 4 on the partial coating member 2 is easily removed by forming the crack 4A.
- the treatment liquid can be permeated under the coating film 4 by forming the cracks 4A, the partial covering member 2 can be dissolved by the treatment liquid. Specifically, by immersing the entire substrate 1 in a container containing the processing liquid, the processing liquid is infiltrated into the connection terminal region 1A containing the crack 4A.
- the element formation region 1A is covered with the coating film 4, it is not affected by the processing liquid.
- the coating films 4 on the plurality of connection terminal regions 1A on the substrate 1 are simultaneously formed in one step of immersing the entire substrate 1 in the processing liquid.
- the connection terminal 11 can be exposed by removing.
- FIG. 3 is an explanatory view showing a method of manufacturing an electronic device according to another embodiment of the present invention (a step of removing the coating film on the partial coating member together with the partial coating member).
- a step of removing the coating film on the partial coating member together with the partial coating member a step of removing the coating film on the partial coating member together with the partial coating member.
- the partial covering member 2 is formed on the element 3 and a part of the element 3 is exposed is shown.
- a sensor element such as gas
- the partial covering member 2 is formed on the portion to be exposed on the element 3, and the element 3 and the partial covering member 2 are covered with the covering film 4.
- a crack 4A is formed in the coating film 4 on the partial coating member 2, and together with the partial coating member 2, the cover on the partial coating member 2 is formed as shown in FIG.
- the covering film 4 is removed to expose the sensing surface 3S of the sensor element.
- FIG. 4A and 4B are explanatory views showing the organic EL device manufactured by the manufacturing method according to the embodiment of the present invention described above (FIG. 4A is a schematic plan view, and FIG. 4B is FIG. 4A. XX sectional view)).
- a plurality of organic EL elements 3A are arranged on a substrate 1.
- the region on the substrate 1 where the organic EL elements 3A are arranged in a dot matrix is the element forming region 1B, and the region where the connection terminals 11 are arranged is the connection terminal region 1A.
- the organic EL element 3 ⁇ / b> A includes a lower electrode 10, an organic layer 13, and an upper electrode 14.
- the lower electrode 10 is arranged in a stripe shape along one direction, and the upper electrode 14 is divided in a direction intersecting the lower electrode 10 by the partition wall 12 and arranged in a stripe shape.
- the organic EL element 3A on the substrate 1 is hermetically sealed by being covered with the coating film 4.
- the coating film 4 is removed in the connection terminal region 1A, and the connection terminal 11 is exposed.
- the lower electrode 10 of the organic EL element 3A is electrically connected to the connection terminal 11 via the lead wire 10A, and the upper electrode 14 is electrically connected to the connection terminal 11 via the lead wire 14A.
- the substrate 1 is light transmissive and is formed of a base material that can support the organic EL element 3A, such as glass or plastic.
- the transparent conductive film layer forming the lower electrode 10 is a transparent metal such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide-based transparent conductive film, SnO 2 -based transparent conductive film, titanium dioxide-based transparent conductive film, etc. An oxide can be used.
- an insulating film (not shown) is provided to ensure insulation between the electrodes.
- This insulating film is made of a material such as polyimide resin, acrylic resin, silicon oxide, or silicon nitride.
- the insulating film is formed by patterning to form an opening for forming a light emitting region for each organic EL element 3A on the lower electrode 10 after forming the material of the insulating film on the substrate 1 on which the lower electrode 10 is patterned.
- a film is formed on the substrate 1 on which the lower electrode 10 is formed so as to have a predetermined coating thickness by spin coating, and exposure processing and development processing are performed using an exposure mask, whereby an organic EL element is obtained.
- An insulating film layer having an opening pattern shape of 3A is formed. This insulating film is formed so as to fill the space between the patterns of the lower electrode 10 and partially cover the side end portion thereof, and is formed in a lattice shape when the organic EL elements 3A are arranged in a dot matrix.
- the partition wall 12 is formed in a stripe shape in a direction intersecting the lower electrode 10 in order to form a pattern of the upper electrode 14 without using a mask or the like, or to completely electrically insulate the adjacent upper electrode 14.
- an insulating material such as a photosensitive resin is formed on the above-described insulating film by spin coating or the like so as to be thicker than the total thickness of the organic layer 13 and the upper electrode 14 forming the organic EL element 3A.
- the photosensitive resin film is irradiated with ultraviolet rays or the like through a photomask having a stripe pattern intersecting the lower electrode 10, and the difference in development speed caused by the difference in the exposure amount in the thickness direction of the layer Is used to form the partition wall 12 having a reverse taper surface 12a whose side faces downward.
- the organic layer 13 has a laminated structure of light emitting functional layers including a light emitting layer.
- a hole injection layer and a hole transport are sequentially formed from the anode side.
- a layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like are selectively formed.
- a vacuum deposition method or the like is used as a dry film formation, and as a wet film formation, coating or various printing methods are used.
- NPB N, N-di (naphtalence) -N, N-dipheneyl-benzidene
- This hole transport layer has a function of transporting holes injected from the anode to the light emitting layer.
- the hole transport layer may be a single layer or a stack of two or more layers.
- the hole transport layer is not formed by a single material, but a single layer may be formed by a plurality of materials, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. Doping may be performed.
- red (R), green (G), and blue (B) light-emitting layers are formed in respective film formation regions by using a resistance heating vapor deposition method using a coating mask.
- red (R) an organic material that emits red light such as a styryl dye such as DCM1 (4- (dicyanomethylene) -2-methyl-6- (4'-dimethylaminostyryl) -4H-pyran) is used.
- An organic material that emits green light such as an aluminum quinolinol complex (Alq3) is used as green (G).
- Alq3 aluminum quinolinol complex
- blue (B) an organic material emitting blue light such as a distyryl derivative or a triazole derivative is used.
- the emission form may be a fluorescent light emitting material or a phosphorescent light emitting material.
- the electron transport layer formed on the light emitting layer is formed by using various materials such as an aluminum quinolinol complex (Alq3) by various film forming methods such as resistance heating vapor deposition.
- the electron transport layer has a function of transporting electrons injected from the cathode to the light emitting layer.
- This electron transport layer may have a multilayer structure in which only one layer is stacked or two or more layers are stacked.
- the electron transport layer may be formed of a plurality of materials instead of a single material, and a guest material having a high charge donating (accepting) property may be formed on a host material having a high charge transport capability. It may be formed by doping.
- a material (metal, metal oxide, metal fluoride, alloy, etc.) having a work function smaller than that of the anode (for example, 4 eV or less) is used.
- metal films such as aluminum (Al), indium (In), magnesium (Mg), amorphous semiconductors such as doped polyaniline and doped polyphenylene vinylene, Cr 2 O 3 , NiO , Oxides such as Mn 2 O 5 can be used.
- a single layer structure made of a metal material, a laminated structure such as LiO 2 / Al, or the like can be adopted.
- the coating film 4 serving as a sealing film for sealing the organic EL element 3A is a single layer or a multilayer of metal, silicon oxide, nitride, or oxynitride formed by an atomic layer growth method.
- a membrane can be used.
- an aluminum oxide film for example, Al 2 O
- an alkyl metal such as TMA (trimethylaluminum), TEA (triethylaluminum), DMAH (dimethylaluminum hydride) and water, oxygen, or alcohols.
- a silicon oxide film for example, SiO 2 film obtained by a reaction between a vaporized gas of a silicon-based material and a vaporized gas of water can be used.
- the process is simple.
- the coating film 4 on the connection terminal region 1A can be removed.
- the substrate 1 is a multi-planar substrate having a plurality of element forming regions 1B, the connection terminals 11 in all the connection terminal regions 1A can be exposed in one step of immersing the substrate 1 in the processing liquid. High productivity can be obtained in the manufacture of an electronic device in which the coating film 4 is formed on the substrate 1.
- the crack 4A is generated in the coating film 4 and the partial coating member 2 can be dissolved by the processing liquid permeated from the crack 4A, only the connection terminal region 1A in which the partial coating member 2 is formed.
- the coating film 4 can be removed with high accuracy.
- only the coating film 4 on the connection terminal region 1A can be removed so as not to adversely affect the element formation region 1B.
Abstract
Description
Claims (14)
- 基板上の一部を部分被覆部材で被覆する工程と、
前記基板上に素子を形成する工程と、
前記素子及び前記部分被覆部材を覆うように前記基板上に被覆膜を成膜する工程と、
前記部分被覆部材上の前記被覆膜にクラックを形成する工程とを有することを特徴とする電子デバイスの製造方法。 - 前記部分被覆部材と共に、前記部分被覆部材上の前記被覆膜を除去する工程を有することを特徴とする請求項1記載の電子デバイスの製造方法。
- 前記部分被覆部材と前記被覆膜は収縮率又は膨張率が異なることを特徴とする請求項2に記載された電子デバイスの製造方法。
- 前記クラックは、前記部分被覆部材の端部に沿って形成されていることを特徴とする請求項3に記載された電子デバイスの製造方法。
- 前記クラックを形成する工程は、前記接続端子領域上の前記部分被覆部材と前記被覆膜に紫外線照射処理又は加熱処理又はレーザー照射を施すことを特徴とする請求項4に記載された電子デバイスの製造方法。
- 前記部分被覆部材は、側部に逆テーパー面を有することを特徴とする請求項5に記載された電子デバイスの製造方法。
- 前記素子は有機EL素子であり、前記被覆膜は前記有機EL素子を封止する封止膜であることを特徴とする請求項1~6のいずれかに記載された電子デバイスの製造方法。
- 前記被覆膜は、原子層堆積(ALD)膜であることを特徴とする請求項7に記載された電子デバイスの製造方法。
- 前記部分被覆部材は、フォトリソグラフィ工程でパターン形成されたレジスト層であることを特徴とする請求項7に記載された電子デバイスの製造方法。
- 前記部分被覆部材は、前記有機EL素子の複数の電極を互いに区分するための隔壁と同じ工程で形成されていることを特徴とする請求項9に記載された電子デバイスの製造方法。
- 前記部分被覆部材は、前記基板上に形成された前記接続端子上を被覆することを特徴とする請求項1に記載された電子デバイスの製造方法。
- 前記部分被覆部材は、印刷若しくはインクジェットによって形成されることを特徴とする請求項1に記載された電子デバイスの製造方法。
- 前記被覆膜を除去する工程は、前記クラックから処理液を浸透させて前記部分被覆部材を溶解することによって行うことを特徴とする請求項2に記載された電子デバイスの製造方法。
- 前記基板が複数の素子形成領域を有する多面取り基板であり、前記基板全体を前記処理液に浸漬することによって、複数の接続端子領域上の前記被覆膜を除去することを特徴とする請求項2に記載された電子デバイスの製造方法。
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US14/385,970 US9722213B2 (en) | 2012-03-27 | 2012-03-27 | Method for manufacturing electronic device |
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JP2016048699A (ja) * | 2016-01-08 | 2016-04-07 | パイオニア株式会社 | 有機el装置 |
JP2016178061A (ja) * | 2015-03-23 | 2016-10-06 | パイオニア株式会社 | 発光装置の製造方法 |
JP2019536245A (ja) * | 2016-12-02 | 2019-12-12 | 武漢華星光電技術有限公司Wuhan China Star Optoelectronics Technology Co.,Ltd | 有機半導体デバイスのパッケージング方法 |
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CN106328827B (zh) * | 2016-10-26 | 2018-08-14 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜封装方法 |
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US20150079708A1 (en) | 2015-03-19 |
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