WO2013105473A1 - 半導体装置、表示装置および半導体装置の製造方法 - Google Patents
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
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- 239000011701 zinc Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
10 薄膜トランジスタ(酸化物半導体TFT)
11 ゲート電極
12 ゲート絶縁膜
13 酸化物半導体層
13s 第1コンタクト領域
13d 第2コンタクト領域
13c チャネル領域
14 ソース電極
15 ドレイン電極
16 保護膜(チャネル保護膜)
16a 第1開口部
16b 第2開口部
17 パッシベーション膜
Claims (12)
- 基板と、
前記基板上に設けられたゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、チャネル領域と、前記チャネル領域の両側にそれぞれ位置する第1コンタクト領域および第2コンタクト領域とを有する島状の酸化物半導体層と、
前記第1コンタクト領域と電気的に接続されたソース電極と、
前記第2コンタクト領域と電気的に接続されたドレイン電極と、
前記酸化物半導体層上に接して設けられ、前記酸化物半導体層と前記ソース電極および前記ドレイン電極との間に形成された保護膜と、
を備え、
前記酸化物半導体層の上面および側面は、前記ソース電極、前記ドレイン電極および前記保護膜によって覆われており、
基板面法線方向から見たとき、前記第1コンタクト領域の外縁から前記ソース電極の外縁までの最短距離および前記第2コンタクト領域の外縁から前記ドレイン電極の外縁までの最短距離は、それぞれ1.5μm以上4.5μm以下である半導体装置。 - 基板面法線方向から見たとき、前記第1コンタクト領域の外縁から前記ソース電極の外縁までの距離および前記第2コンタクト領域の外縁から前記ドレイン電極の外縁までの距離であって、チャネル長方向に沿って規定される距離は、それぞれ1.5μm以上4.5μm以下である請求項1に記載の半導体装置。
- 基板面法線方向から見たとき、前記第1コンタクト領域の外縁から前記ソース電極の外縁までの距離および前記第2コンタクト領域の外縁から前記ドレイン電極の外縁までの距離であって、チャネル幅方向に沿って規定される距離は、それぞれ1.5μm以上4.5μm以下である請求項1または2に記載の半導体装置。
- 基板面法線方向から見たとき、前記第1コンタクト領域の外縁から前記ソース電極の外縁までの最短距離および前記第2コンタクト領域の外縁から前記ドレイン電極の外縁までの最短距離は、それぞれ2.0μm以上3.5μm以下である請求項1から3のいずれかに記載の半導体装置。
- 前記保護膜は、酸化物層を含む請求項1から4のいずれかに記載の半導体装置。
- 前記保護膜は、シリコン酸化物層を含む請求項5に記載の半導体装置。
- 前記保護膜は、酸化アルミニウム層およびシリコン窒化物層を含まない請求項5または6に記載の半導体装置。
- 前記ゲート絶縁膜は、単層または略全体にわたって複層である請求項1から7のいずれかに記載の半導体装置。
- 前記ソース電極および前記ドレイン電極を覆うように形成されたパッシベーション膜をさらに備え、
前記パッシベーション膜は、シリコン酸化物層と、前記シリコン酸化物層上に形成されたシリコン窒化物層とを含む請求項1から8のいずれかに記載の半導体装置。 - アクティブマトリクス基板である請求項1から9のいずれかに記載の半導体装置。
- 請求項10に記載の半導体装置を備える表示装置。
- (A)基板上にゲート電極を形成する工程と、
(B)前記ゲート電極を覆うようにゲート絶縁膜を形成する工程と、
(C)前記ゲート絶縁膜上に島状の酸化物半導体層を形成する工程と、
(D)前記酸化物半導体層上に、第1および第2開口部を有する保護膜を形成する工程と、
(E)前記第1開口部を介して前記酸化物半導体層と電気的に接続されたソース電極と、前記第2開口部を介して前記酸化物半導体層と電気的に接続されたドレイン電極とを形成する工程と、
を包含し、
前記工程(D)および前記工程(E)は、前記酸化物半導体層の上面および側面が、前記ソース電極、前記ドレイン電極および前記保護膜によって覆われるように実行され、
さらに、前記工程(E)は、基板面法線方向から見たとき、前記第1開口部の外縁から前記ソース電極の外縁までの最短距離および前記第2開口部の外縁から前記ドレイン電極の外縁までの最短距離が、それぞれ1.5μm以上4.5μm以下であるように実行される半導体装置の製造方法。
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SG11201403994XA SG11201403994XA (en) | 2012-01-11 | 2012-12-28 | Semiconductor device, display device, and semiconductor device manufacturing method |
JP2013553261A JP5828911B2 (ja) | 2012-01-11 | 2012-12-28 | 半導体装置、表示装置および半導体装置の製造方法 |
CN201280066838.XA CN104040724B (zh) | 2012-01-11 | 2012-12-28 | 半导体装置、显示装置和半导体装置的制造方法 |
US14/370,804 US9012910B2 (en) | 2012-01-11 | 2012-12-28 | Semiconductor device, display device, and semiconductor device manufacturing method |
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PCT/JP2012/084178 WO2013105473A1 (ja) | 2012-01-11 | 2012-12-28 | 半導体装置、表示装置および半導体装置の製造方法 |
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US (1) | US9012910B2 (ja) |
JP (1) | JP5828911B2 (ja) |
CN (1) | CN104040724B (ja) |
SG (1) | SG11201403994XA (ja) |
TW (1) | TWI538221B (ja) |
WO (1) | WO2013105473A1 (ja) |
Cited By (1)
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US9508866B1 (en) | 2013-07-05 | 2016-11-29 | Joled Inc. | Thin-film transistor element, method for manufacturing same, and display device |
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TWI621270B (zh) * | 2013-02-07 | 2018-04-11 | 群創光電股份有限公司 | 薄膜電晶體元件與薄膜電晶體顯示裝置 |
WO2015068319A1 (ja) * | 2013-11-06 | 2015-05-14 | 株式会社Joled | 薄膜トランジスタ及びその製造方法 |
CN103715270B (zh) * | 2013-12-31 | 2016-03-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、显示器件 |
KR102576214B1 (ko) * | 2018-06-28 | 2023-09-07 | 삼성디스플레이 주식회사 | 배선 기판 및 이를 포함하는 표시 장치 |
US11444025B2 (en) * | 2020-06-18 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor and fabrication method thereof |
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- 2012-12-28 JP JP2013553261A patent/JP5828911B2/ja active Active
- 2012-12-28 SG SG11201403994XA patent/SG11201403994XA/en unknown
- 2012-12-28 CN CN201280066838.XA patent/CN104040724B/zh active Active
- 2012-12-28 US US14/370,804 patent/US9012910B2/en active Active
- 2012-12-28 WO PCT/JP2012/084178 patent/WO2013105473A1/ja active Application Filing
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- 2013-01-11 TW TW102101192A patent/TWI538221B/zh active
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JP2010182818A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2010212673A (ja) * | 2009-02-13 | 2010-09-24 | Semiconductor Energy Lab Co Ltd | トランジスタ、及び当該トランジスタを具備する半導体装置、並びにそれらの作製方法 |
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Also Published As
Publication number | Publication date |
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CN104040724A (zh) | 2014-09-10 |
JP5828911B2 (ja) | 2015-12-09 |
US20150028332A1 (en) | 2015-01-29 |
JPWO2013105473A1 (ja) | 2015-05-11 |
SG11201403994XA (en) | 2014-10-30 |
TWI538221B (zh) | 2016-06-11 |
US9012910B2 (en) | 2015-04-21 |
TW201334194A (zh) | 2013-08-16 |
CN104040724B (zh) | 2016-11-09 |
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