WO2013084686A1 - 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 - Google Patents
研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 Download PDFInfo
- Publication number
- WO2013084686A1 WO2013084686A1 PCT/JP2012/079698 JP2012079698W WO2013084686A1 WO 2013084686 A1 WO2013084686 A1 WO 2013084686A1 JP 2012079698 W JP2012079698 W JP 2012079698W WO 2013084686 A1 WO2013084686 A1 WO 2013084686A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- polishing composition
- abrasive grains
- colloidal silica
- particle diameter
- Prior art date
Links
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to a polishing composition containing abrasive grains having a plurality of protrusions on the surface.
- the present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
- Non-spherical particles as abrasive grains of the polishing composition is effective as a means for improving the polishing rate of the polishing composition.
- Patent Document 1 discloses the use of colloidal silica particles having a large number of small protrusions on the surface for mirror polishing of a silicon wafer.
- Patent Document 2 discloses a silica sol containing silica particles having a minor axis / major axis ratio in the range of 0.01 to 0.8 and having a plurality of hook-shaped projections on the surface.
- a polishing composition used as an abrasive is a disclosure of a polishing composition used as an abrasive.
- the inventor of the present invention has conducted experiments on a polishing composition containing abrasive grains having a plurality of protrusions on the surface, and as a result, the polishing rate of a hydrophilic object to be polished by this polishing composition is determined by the polishing composition. It was found that it was strongly influenced by organic alkali contained in the product.
- the present invention has been made based on such new findings by the inventor, and the object of the present invention is to provide a polishing composition capable of polishing a hydrophilic polishing object at a higher polishing rate. It is another object of the present invention to provide a polishing method and a substrate manufacturing method using the polishing composition.
- a polishing composition for polishing the surface of a hydrophilic polishing object comprising abrasive grains having a plurality of protrusions on the surface The average of the values obtained by dividing the height of the protrusions on the surface of the abrasive grains having a particle diameter larger than the volume-based average particle diameter of the abrasive grains by the width at the base of the same protrusion among the abrasive grains.
- the average height of protrusions on the surface of the abrasive grains having a particle diameter larger than the volume-based average particle diameter of the abrasive grains is 3.5 nm or more.
- the amount of the organic alkali contained in the polishing composition is 100 mmol or less per 1 kg of the abrasive grains in the polishing composition.
- the pH of the polishing composition is preferably in the range of ⁇ 2 of the value of the organic alkali acid dissociation constant pKa.
- the abrasive grains may be colloidal silica.
- the amount of metal impurities contained in the colloidal silica is preferably 1 mass ppm or less.
- a substrate manufacturing method for manufacturing a substrate by polishing a surface of an object to be polished having a water contact angle of 40 degrees or less using the polishing composition of the first aspect. provide.
- a polishing composition capable of polishing a hydrophilic polishing object at a high polishing rate, a polishing method using the polishing composition, and a method for producing a substrate.
- FIG. 1 The figure which shows the outline which projected the external shape of the abrasive grain contained in the polishing composition which concerns on one Embodiment of this invention.
- (A) is a scanning electron micrograph of colloidal silica abrasive grains used in the polishing compositions of Examples 1 and 2 and Comparative Examples 2 and 3, and (b) is used in the polishing composition of Comparative Example 1. Scanning electron micrograph of the colloidal silica abrasive grains.
- (A) and (b) are graphs showing the relationship between the polishing rate and pH when a silicon oxide film is polished using the polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 3.
- the polishing composition according to this embodiment is used for polishing the surface of a hydrophilic polishing object. More specifically, it is used for polishing a metal oxide film formed on a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer, particularly for polishing a silicon oxide film formed on a silicon wafer.
- the silicon oxide film is a film made of a single oxide or a complex oxide of silicon. Specific examples thereof include a TEOS (tetraethyl orthosilicate) film, a BPSG (borophosphosilicate glass) film, a PSG (phosphosilicate glass) film, and a SOG ( spin on glass) film and thermal oxide film.
- the metal oxide film is not limited to a silicon oxide film.
- metal oxide films examples include metals such as aluminum, zirconium, titanium, tin, zinc, antimony, indium, magnesium, boron, and niobium.
- membrane which consists of a single oxide or complex oxide of these is mentioned.
- the metal oxide film is made of a metal oxide modified with a dopant such as antimony-doped tin oxide (ATO), fluorine-doped tin oxide, phosphorus-doped tin oxide, tin-doped indium oxide (ITO), or fluorine-doped indium oxide. It may be.
- the degree of hydrophilicity of an object to be polished can be represented by a water contact angle, and the polishing composition of the present embodiment is particularly used for polishing the surface of an object to be polished having a water contact angle of 40 degrees or less, Furthermore, it is used in applications where the polishing object is polished to produce a substrate.
- the measurement of the water contact angle is generally performed by the ⁇ / 2 method, and can be performed using, for example, a wafer cleaning treatment evaluation apparatus “CA-X200” manufactured by Kyowa Interface Science Co., Ltd.
- the polishing composition of this embodiment contains at least abrasive grains having a plurality of protrusions on the surface.
- abrasive grains having a plurality of protrusions on the surface.
- the abrasive grains in the polishing composition are, for example, particles made of metal oxide, diamond, silicon carbide, silicon nitride, or boron nitride, but are not limited thereto.
- the metal oxide particles include particles made of silica, alumina, zirconia, ceria, titania or magnesia. Among these, silica particles are preferable, and colloidal silica is particularly preferable.
- the number of protrusions on the surface of the abrasive grains in the polishing composition is preferably 3 or more on average per abrasive grain, more preferably 5 or more.
- the protrusions have a height and width that are sufficiently smaller than the particle diameter of the abrasive grains.
- the length of the portion shown as the curve AB passing through the points A and B is the circumferential length of the maximum inscribed circle of the abrasive grain, more precisely, the outer shape of the abrasive grain.
- the protrusions do not exceed a quarter of the circumference of the largest circle inscribed in the projected contour.
- the width of the protrusion refers to the width at the base of the protrusion, and is represented as the distance between the point A and the point B in FIG.
- the height of the protrusion refers to the distance between the base of the protrusion and the portion of the protrusion farthest from the base, and is represented as the length of the line segment CD orthogonal to the straight line AB in FIG. Is.
- the height of each protrusion of the abrasive grains and the width at the base thereof can be obtained by analyzing the image of the abrasive grains with a scanning electron microscope using general image analysis software.
- the average height of the protrusions on the surface of the abrasive grains having a particle diameter larger than the volume-based average particle diameter of the abrasive grains is 3.5 nm or more, preferably 4.0 nm or more. As the average height of the protrusions increases, the polishing rate by the polishing composition increases.
- the volume-based average particle diameter of the abrasive grains in the polishing composition is preferably 10 to 300 nm.
- the volume-based average particle diameter of the abrasive grains is within the above range, in addition to improving the sedimentation stability of the polishing composition, the surface roughness of the polishing object after polishing with the polishing composition is increased. It tends to be small.
- the volume-based average particle diameter of the abrasive grains reaches 50% of the cumulative volume of all abrasive grains in the polishing composition, the abrasive volume is accumulated in order from the abrasive grains having the smallest particle diameter by the dynamic light scattering method. It is equal to the particle diameter of the abrasive grain accumulated last.
- the volume-based 95% particle diameter (D95 value) of the abrasive grains in the polishing composition is preferably 500 nm or less, more preferably 400 nm or less. As the volume-based 95% particle size of the abrasive grains decreases, the settling stability of the polishing composition improves, and the surface roughness of the object to be polished after polishing with the polishing composition decreases. Cheap.
- the volume-based 95% particle diameter of the abrasive grains was accumulated in order from the abrasive grains having the smallest particle diameter by dynamic light scattering until reaching 95% of the accumulated volume of all abrasive grains in the polishing composition. Sometimes equal to the particle size of the abrasive grain accumulated last.
- the abrasive grains in the polishing composition have a content of metal impurities such as sodium, potassium, calcium, boron, aluminum, titanium, zirconium, manganese, iron, cobalt, copper, zinc, silver, lead, etc. of 1 mass ppm or less. Preferably there is.
- the content of metal impurities can be measured by, for example, an ICP mass spectrometer.
- Colloidal silica abrasive grains having a plurality of protrusions on the surface can be produced, for example, by the following method. That is, first, a slurry containing colloidal silica particles is obtained by continuously adding alkoxysilane to a mixed solution of methanol and water to which ammonia water is added as a catalyst and hydrolyzing the mixture. The resulting slurry is heated to distill off methanol and ammonia. Thereafter, an organic alkali is added to the slurry as a catalyst, and then alkoxysilane is continuously added again at a temperature of 70 ° C. or more to hydrolyze, thereby forming a plurality of protrusions on the surface of the colloidal silica particles.
- organic alkali examples include amine compounds such as triethanolamine and quaternary ammonium compounds such as tetramethylammonium hydroxide. According to this method, it is possible to easily obtain colloidal silica abrasive grains having a metal impurity content of 1 mass ppm or less.
- a general method for producing colloidal silica by hydrolysis of alkoxysilane is described in, for example, pages 154 to 156 of “Science of Sol-Gel Method” by Sakuo Sakuhana.
- Japanese Patent Application Laid-Open No. 11-60232 discloses that methyl silicate or a mixture of methyl silicate and methanol is dropped into water, methanol and ammonia or a mixed solvent composed of ammonia and ammonium salt, and methyl silicate and water are added.
- saddle-type colloidal silica produced by reacting.
- 2001-48520 discloses an elongated colloidal silica produced by hydrolyzing an alkyl silicate with an acid catalyst and then heating by adding an alkali catalyst to advance polymerization of silicic acid to grow particles.
- Japanese Patent Application Laid-Open No. 2007-153732 describes that colloidal silica having a large number of small protrusions can be produced from a readily hydrolyzable organosilicate as a raw material by using a specific type of hydrolysis catalyst in a specific amount.
- Japanese Patent Application Laid-Open No. 2002-338232 discloses that secondary aggregation is performed spherically by adding a flocculant to monodispersed colloidal silica. In Japanese Patent Application Laid-Open No.
- a calcium salt or a magnesium salt is added to activated silicic acid obtained from sodium silicate so as to obtain an irregular shaped colloidal silica such as an elongated shape.
- Japanese Patent Application Laid-Open No. 2001-11433 discloses that beaded colloidal silica is obtained by adding a calcium salt to activated silicic acid obtained from sodium silicate.
- Japanese Patent Application Laid-Open No. 2008-169102 describes that colloidal silica having a large number of small protrusions such as confetti can be produced by generating and growing fine particles on the surface of seed particles.
- Colloidal silica abrasive grains having a plurality of protrusions on the surface can also be produced by using the methods described in these documents alone or in combination.
- an organic alkali used as a catalyst during the production of abrasive grains may inevitably be mixed.
- an organic alkali may be intentionally added to the polishing composition.
- the amount of the organic alkali contained in the polishing composition needs to be 100 mmol or less per 1 kg of the abrasive grains in the polishing composition. This is because otherwise, the polishing rate by the polishing composition is greatly reduced.
- the polishing composition has a pH close to the value of the acid dissociation constant pKa of the organic alkali, the reduction in the polishing rate is significant.
- the reason why the polishing rate is lowered by the organic alkali is that the organic alkali dissociated in the polishing composition is adsorbed on the surface of the hydrophilic object to be polished, more specifically on the surface of the metal oxide film. Presumed to be the cause. In the case of a water-repellent polishing object such as a silicon substrate, a decrease in the polishing rate due to organic alkali is not observed, which supports this assumption.
- limiting the content of the organic alkali in the polishing composition as described above is more specifically when the pH value of the polishing composition is close to the pKa of the organic alkali, more specifically, the pKa of the organic alkali.
- the polishing composition has a pH in the range of ⁇ 2 of the value, it can be said that the decrease in the polishing rate can be suppressed particularly effectively.
- the polishing rate of the hydrophilic polishing object is particularly reduced when the polishing composition has a pH close to the value of the acid dissociation constant pKa of the organic alkali. It was obtained for the first time.
- the organic alkali contained in the polishing composition is triethanolamine
- the pethanol value of triethanolamine is 7.6
- the pH of the polishing composition is 5.6 to 9. It can be said that it is particularly effective in the case of the range of 6.
- the organic alkali contained in the polishing composition is tetramethylammonium hydroxide
- the pKa value of tetramethylammonium hydroxide is 9.8
- the pH of the polishing composition is 7. It can be said that it is particularly effective in the range of 8 to 11.8.
- the content of the organic alkali in the polishing composition is 50 mmol or less per 1 kg of abrasive grains in the polishing composition because the polishing rate of the hydrophilic polishing object by the polishing composition is further improved. It is preferable.
- the content of the organic alkali in the polishing composition can be measured by capillary electrophoresis (CE) or capillary electrophoresis-mass spectrometry (CE-MS).
- the height of the protrusions on the surface of the abrasive grains having a particle diameter larger than the volume-based average particle diameter of the abrasive grains is divided by the width at the base of the same protrusion.
- the average value obtained by doing this is 0.170 or more.
- the average height of the protrusions on the surface of the abrasive grains having a particle diameter larger than the volume-based average particle diameter of the abrasive grains in the polishing composition is 3.5 nm or more.
- the polishing composition of this embodiment can polish an object to be polished at a high polishing rate.
- the amount of organic alkali contained in the polishing composition of the present embodiment is 100 mmol or less per 1 kg of abrasive grains in the polishing composition.
- the organic alkali is adsorbed on the surface of the hydrophilic polishing object, the polishing of the polishing object by the polishing composition is hindered.
- the organic alkali content in the polishing composition is limited. Thus, it is possible to effectively suppress a decrease in the polishing rate caused by the organic alkali.
- the polishing composition of the present embodiment is suitable for use in polishing a surface of a hydrophilic polishing object, more specifically, in a use of polishing a metal oxide film.
- the embodiment may be modified as follows.
- the polishing composition of the above embodiment may further contain a known additive as required.
- a) inorganic alkali such as alkali metal hydroxide, alkali metal salt, ammonia, ammonium salt
- inorganic acid such as hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, Or acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycine, lactic acid, hydroxyethylidene diphosphonic acid (HEDP), nitrilotris Organic acids such as [methylene phosphonic acid] (NTMP), phosphonobutane tricarboxylic acid (PBTC), (c) nonionic, anionic, cationic or amphoteric surfact
- the polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
- the polishing composition of the above embodiment may be used for purposes other than polishing a hydrophilic polishing object.
- Example 1 By mixing the colloidal silica abrasive grains with pure water, a polishing composition having a colloidal silica abrasive grain content of 10.0% by mass was prepared.
- the used colloidal silica abrasive grains had a plurality of protrusions on the surface as apparent from the scanning electron micrograph shown in FIG.
- the average height of the protrusions on the surface of the colloidal silica abrasive grains having a particle diameter larger than the volume-based average particle diameter of the colloidal silica abrasive grains was 4.25 nm.
- the average of was 0.310.
- the volume-based average particle diameter of the colloidal silica abrasive grains was 85 nm.
- the volume-based 95% particle diameter of the colloidal silica abrasive grains was 116 nm.
- the content of metal impurities in the colloidal silica abrasive was less than 1 ppm.
- the pH of the obtained polishing composition was measured and found to be 7.0.
- triethanolamine used as a catalyst during the production of the colloidal silica abrasive grains is inevitably mixed, and when the content thereof is measured, the colloidal silica abrasive in the polishing composition is measured. It was 5 mmol per 1 kg of grains.
- Example 2 Triethanolamine was added to the polishing composition of Example 1 to increase the amount of organic alkali contained in the polishing composition to 50 mmol per 1 kg of colloidal silica abrasive grains in the polishing composition.
- the pH of the polishing composition was measured after the addition of triethanolamine, the value was 8.5.
- Comparative Example 1 By mixing the colloidal silica abrasive grains with pure water, a polishing composition having a colloidal silica abrasive grain content of 10.0% by mass was prepared.
- the used colloidal silica abrasive grains did not have protrusions on the surface as apparent from the scanning electron micrograph shown in FIG.
- the volume-based average particle diameter of the colloidal silica abrasive grains was 131 nm.
- the volume-based 95% particle diameter of the colloidal silica abrasive grains was 212 nm.
- the content of metal impurities in the colloidal silica abrasive was less than 1 ppm.
- the pH of the obtained polishing composition was measured, the value was 7.5. This polishing composition did not contain detectable levels of organic alkali.
- Triethanolamine was added to the polishing composition of Example 1 to increase the amount of organic alkali contained in the polishing composition to 140 mmol per 1 kg of colloidal silica abrasive grains in the polishing composition.
- the pH of the polishing composition was measured after the addition of triethanolamine, the value was 8.9.
- Example 3 Tetramethylammonium hydroxide was added to the polishing composition of Example 1 to increase the amount of organic alkali contained in the polishing composition to 140 mmol per 1 kg of colloidal silica abrasive grains in the polishing composition. .
- pH of the polishing composition was measured after the addition of triethanolamine, the value was 9.7.
- the polishing compositions of pH 3.0, pH 7.0 and pH 11.0 from the polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 3 were used.
- Table 1 shows the surface of a silicon wafer having a silicon oxide film on the surface, specifically, a PE-TEOS (plasma-enhanced tetraethylorthosilicate) blanket wafer having a diameter of 50.8 mm, using each of the obtained polishing compositions. Polished under the conditions of Table 2 and FIGS. 3 (a) and 3 (b) show the polishing rate values obtained at this time according to the following formula.
- PE-TEOS plasma-enhanced tetraethylorthosilicate
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Abstract
Description
コロイダルシリカ砥粒を純水と混合することにより、コロイダルシリカ砥粒の含有量が10.0質量%の研磨用組成物を調製した。使用したコロイダルシリカ砥粒は、図2(a)に示す走査型電子顕微鏡写真で明らかなように複数の突起を表面に有していた。コロイダルシリカ砥粒のうちコロイダルシリカ砥粒の体積基準平均粒子径よりも粒子径の大きなコロイダルシリカ砥粒が表面に有する突起の高さの平均は4.25nmであった。コロイダルシリカ砥粒のうちコロイダルシリカ砥粒の体積基準平均粒子径よりも粒子径の大きなコロイダルシリカ砥粒が表面に有する突起の高さをそれぞれ同じ突起の基部における幅で除することにより得られる値の平均は0.310であった。コロイダルシリカ砥粒の体積基準平均粒子径は85nmであった。コロイダルシリカ砥粒の体積基準95%粒子径は116nmであった。コロイダルシリカ砥粒中の金属不純物の含有量は1ppm未満であった。得られた研磨用組成物のpHを測定したところ、その値は7.0であった。また、研磨用組成物中には、コロイダルシリカ砥粒の製造時に触媒として使用したトリエタノールアミンが不可避的に混入しており、その含有量を測定したところ、研磨用組成物中のコロイダルシリカ砥粒1kgにつき5mmolであった。
実施例1の研磨用組成物にトリエタノールアミンを添加して、研磨用組成物中に含まれる有機アルカリの量を研磨用組成物中のコロイダルシリカ砥粒1kgにつき50mmolにまで増加させた。トリエタノールアミンの添加後に研磨用組成物のpHを測定したところ、その値は8.5であった。
コロイダルシリカ砥粒を純水と混合することにより、コロイダルシリカ砥粒の含有量が10.0質量%の研磨用組成物を調製した。使用したコロイダルシリカ砥粒は、図2(b)に示す走査型電子顕微鏡写真で明らかなように表面に突起を有していなかった。コロイダルシリカ砥粒の体積基準平均粒子径は131nmであった。コロイダルシリカ砥粒の体積基準95%粒子径は212nmであった。コロイダルシリカ砥粒中の金属不純物の含有量は1ppm未満であった。得られた研磨用組成物のpHを測定したところ、その値は7.5であった。この研磨用組成物中には検出可能なレベルの有機アルカリは含まれていなかった。
実施例1の研磨用組成物にトリエタノールアミンを添加して、研磨用組成物中に含まれる有機アルカリの量を研磨用組成物中のコロイダルシリカ砥粒1kgにつき140mmolにまで増加させた。トリエタノールアミンの添加後に研磨用組成物のpHを測定したところ、その値は8.9であった。
実施例1の研磨用組成物に水酸化テトラメチルアンモニウムを添加して、研磨用組成物中に含まれる有機アルカリの量を研磨用組成物中のコロイダルシリカ砥粒1kgにつき140mmolにまで増加させた。トリエタノールアミンの添加後に研磨用組成物のpHを測定したところ、その値は9.7であった。
Claims (6)
- 親水性の研磨対象物の表面を研磨するための研磨用組成物であって、
複数の突起を表面に有する砥粒を含有し、
前記砥粒のうち砥粒の体積基準平均粒子径よりも粒子径の大きな砥粒が表面に有する突起の高さをそれぞれ同じ突起の基部における幅で除することにより得られる値の平均が0.170以上であり、
前記砥粒のうち砥粒の体積基準平均粒子径よりも粒子径の大きな砥粒が表面に有する突起の平均高さが3.5nm以上であり、
研磨用組成物中に含まれる有機アルカリの量が、研磨用組成物中の前記砥粒1kgにつき100mmol以下であることを特徴とする研磨用組成物。 - 研磨用組成物のpHが前記有機アルカリの酸解離定数pKaの値の±2の範囲である、請求項1に記載の研磨用組成物。
- 前記砥粒はコロイダルシリカであり、当該コロイダルシリカ中に含まれる金属不純物の量が1質量ppm以下である、請求項1又は2に記載の研磨用組成物。
- 請求項1~3のいずれか一項に記載の研磨用組成物を用いて、40度以下の水接触角を有する研磨対象物の表面を研磨することを特徴とする研磨方法。
- 前記研磨対象物が金属酸化物膜である、請求項4に記載の研磨方法。
- 請求項1~3のいずれか一項に記載の研磨用組成物を用いて、40度以下の水接触角を有する研磨対象物の表面を研磨することにより、基板を製造することを特徴とする基板の製造方法。
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US9611406B2 (en) | 2017-04-04 |
KR101917410B1 (ko) | 2018-11-09 |
KR20140101832A (ko) | 2014-08-20 |
CN103975037B (zh) | 2015-11-25 |
JP2013121631A (ja) | 2013-06-20 |
JP5838083B2 (ja) | 2015-12-24 |
MY167211A (en) | 2018-08-14 |
CN103975037A (zh) | 2014-08-06 |
TWI593792B (zh) | 2017-08-01 |
US20140335762A1 (en) | 2014-11-13 |
TW201343883A (zh) | 2013-11-01 |
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