WO2013074846A1 - Radio frequency package on package circuit - Google Patents

Radio frequency package on package circuit Download PDF

Info

Publication number
WO2013074846A1
WO2013074846A1 PCT/US2012/065363 US2012065363W WO2013074846A1 WO 2013074846 A1 WO2013074846 A1 WO 2013074846A1 US 2012065363 W US2012065363 W US 2012065363W WO 2013074846 A1 WO2013074846 A1 WO 2013074846A1
Authority
WO
WIPO (PCT)
Prior art keywords
radio frequency
package
frequency package
circuit
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/065363
Other languages
English (en)
French (fr)
Inventor
Aristotele Hadjichristos
Gurkanwal Singh Sahota
Steven C. Ciccarelli
David J. WILDING
Ryan D. Lane
Christian Holenstein
Milind P. Shah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to IN2599CHN2014 priority Critical patent/IN2014CN02599A/en
Priority to JP2014542472A priority patent/JP6109842B2/ja
Priority to KR1020147016356A priority patent/KR101613274B1/ko
Priority to CN201280056157.5A priority patent/CN103930989B/zh
Priority to EP12805818.7A priority patent/EP2780941A1/en
Publication of WO2013074846A1 publication Critical patent/WO2013074846A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/046—Surface mounting
    • H05K13/0465—Surface mounting by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16265—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/17181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/5317—Laminated device

Definitions

  • the present disclosure relates generally to wireless devices for communication systems. More specifically, the present disclosure relates to systems and methods for generating a radio frequency package on package (PoP) circuit.
  • PoP radio frequency package on package
  • a radio frequency package on package (PoP) circuit includes a first radio frequency package.
  • the first radio frequency package includes radio frequency components.
  • the radio frequency package on package (PoP) circuit also includes a second radio frequency package.
  • the second radio frequency package includes radio frequency components.
  • the first radio frequency package and the second radio frequency package are in a vertical configuration.
  • the radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.
  • the first radio frequency package may include passive or active radio frequency components. Each of the radio frequency components on the first radio frequency package may be passive or active radio frequency components.
  • the second radio frequency package may include passive or active radio frequency components. Each of the radio frequency components on the second radio frequency package may be passive or active components.
  • the radio frequency package on package circuit may be implemented in a front end circuit of a wireless device.
  • the radio frequency components on the first radio frequency package and the second radio frequency package may be designed according to a desired thickness of the radio frequency package on package circuit.
  • the desired thickness may be equal to or less than 1 millimeter (mm).
  • Back grinding may be performed on one or more of the radio frequency components of one of the first radio frequency package and the second radio frequency package. The back grinding may be performed according to the desired thickness of the radio frequency package on package (PoP) circuit.
  • PoP radio frequency package on package
  • the first radio frequency package or second radio frequency package may include one or more filters.
  • the first radio frequency package or second radio frequency package may include one or more power amplifiers.
  • At least one of the filters may be a surface acoustic wave (SAW) filter or a bulk acoustic wave (BAW) filter.
  • the first radio frequency package may include one or more filters, duplexers, low noise amplifiers and switches.
  • the second radio frequency package may include one or more antenna switches and power amplifiers.
  • the first radio frequency package and the second radio frequency package may be coupled using multiple interconnects.
  • the multiple interconnects may include soldering balls.
  • the multiple interconnects may include vias.
  • One or more radio frequency components on the first radio frequency package may be electrically coupled to at least one radio frequency component on the second radio frequency package via the multiple interconnects.
  • a method of generating a radio frequency package on package (PoP) circuit is also described. The method includes obtaining a first radio frequency package.
  • the first radio frequency package includes radio frequency components.
  • the method also includes obtaining a second radio frequency package.
  • the second radio frequency package includes radio frequency components.
  • the radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.
  • the method also includes connecting the first radio frequency package to the second radio frequency package in a vertical configuration.
  • An apparatus for generating a radio frequency package on package (PoP) circuit includes means for obtaining a first radio frequency package.
  • the first radio frequency package includes radio frequency components.
  • the apparatus also includes means for obtaining a second radio frequency package.
  • the second radio frequency package includes radio frequency components.
  • the radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.
  • the apparatus also includes means for connecting the first radio frequency package to the second radio frequency package in a vertical configuration.
  • a computer-program product for generating a radio frequency package on package (PoP) circuit is also described.
  • the computer-program product includes a non- transitory computer-readable medium having instructions thereon.
  • the instructions include code for causing an apparatus to obtain a first radio frequency package.
  • the first radio frequency package includes radio frequency components.
  • the instructions also include code for causing the apparatus to obtain a second radio frequency package.
  • the second radio frequency package includes radio frequency components.
  • the radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.
  • the instructions also include code for causing the apparatus to connect the first radio frequency package to the second radio frequency package in a vertical configuration.
  • Figure 1 is a block diagram illustrating a radio frequency package on package (PoP) circuit implemented on a wireless device
  • PoP radio frequency package on package
  • Figure 2 is a block diagram illustrating a radio frequency package on package (PoP) circuit
  • Figure 3 is a side view of a radio frequency package on package (PoP) circuit
  • FIG. 4 is a flow diagram of a method for generating a radio frequency package on package (PoP) circuit
  • FIG. 5 is a block diagram illustrating one configuration of a radio frequency package on package (PoP) circuit
  • FIG. 6 is a block diagram illustrating another configuration of a radio frequency package on package (PoP) circuit
  • FIG. 7 is a side view of another configuration of a radio frequency package on package (PoP) circuit
  • FIG. 8 is a block diagram illustrating yet another configuration of a radio frequency package on package (PoP) circuit
  • FIG. 9 is a side view of still yet another configuration of a radio frequency package on package (PoP) circuit.
  • PoP radio frequency package on package
  • Figure 10 illustrates certain components that may be included within an electronic device/wireless device.
  • FIG. 1 is a block diagram illustrating a radio frequency package on package (PoP) circuit 104 implemented on a wireless device 102.
  • Package on package (PoP) circuits are multiple discrete circuits that are packaged using a vertical configuration.
  • a package on package (PoP) circuit may include two or more packages that are installed on top of each other with an interface or interconnection for routing signals between the packages.
  • the packages that make up a package on package (PoP) circuit may include multiple discrete circuits from different sources. In this way, a package on package (PoP) circuit may be assembled using different circuits from different manufacturers.
  • a radio frequency package on package (PoP) circuit 104 may include one or more radio frequency packages 106, 108 with radio frequency components that are packaged together using a vertical configuration.
  • the radio frequency package on package (PoP) circuit 104 may be implemented on a wireless device 102.
  • the radio frequency package on package (PoP) circuit 104 includes a first radio frequency package 106 and a second radio frequency package 108.
  • the first radio frequency package 106 and the second radio frequency package 108 may include radio frequency components that are used by the wireless device 102.
  • the first radio frequency package 106 and the second radio frequency package 108 may be vertically oriented such that the first radio frequency package 106 is physically on top of the second radio frequency package 108.
  • the second radio frequency package 108 may be on top of the first radio frequency package 106.
  • the wireless device 102 may be a wireless communication device or a base station.
  • a wireless communication device may also be referred to as, and may include some or all of the functionality of, a terminal, an access terminal, a user equipment (UE), a subscriber unit, a station, etc.
  • a wireless communication device may be a cellular phone, a personal digital assistant (PDA), a wireless device, a wireless modem, a handheld device, a laptop computer, a PC card, compact flash, an external or internal modem, a wireline phone, etc.
  • PDA personal digital assistant
  • a wireless communication device may be mobile or stationary.
  • a wireless communication device may communicate with zero, one or multiple base stations on a downlink and/or an uplink at any given moment.
  • the downlink refers to the communication link from a base station to a wireless communication device
  • the uplink refers to the communication link from a wireless communication device to a base station.
  • Uplink and downlink may refer to the communication link or to the carriers used for the communication link.
  • a wireless device may operate in a wireless communication system that includes other wireless devices, such as base stations.
  • a base station is a station that communicates with one or more wireless communication devices.
  • a base station may also be referred to as, and may include some or all of the functionality of, an access point, a broadcast transmitter, a Node B, an evolved Node B, etc.
  • Each base station provides communication coverage for a particular geographic area.
  • a base station may provide communication coverage for one or more wireless communication devices.
  • the term "cell" can refer to a base station and/or its coverage area, depending on the context in which the term is used.
  • Communication in a wireless communication system may be achieved through transmissions over a wireless link.
  • a communication link may be established via a single-input and single-output (SISO) or a multiple-input and multiple-output (MIMO) system.
  • SISO single-input and single-output
  • MIMO multiple-input and multiple-output
  • a multiple-input and multiple- output (MEVIO) system includes transmitter(s) and receiver(s) equipped, respectively, with multiple (NT) transmit antennas and multiple (NR) receive antennas for data transmission.
  • SISO systems are particular instances of a multiple-input and multiple- output (MIMO) system.
  • the multiple-input and multiple-output (MEVIO) system can provide improved performance (e.g., higher throughput, greater capacity or improved reliability) if the additional dimensionalities created by the multiple transmit and receive antennas are utilized.
  • Further examples of wireless communications systems may include Wi-Fi or Bluetooth technologies.
  • the wireless communication system may utilize both single-input and multiple-output (SIMO) and multiple-input and multiple-output (MEVIO).
  • the wireless communication system may be a multiple- access system capable of supporting communication with multiple wireless communication devices by sharing the available system resources (e.g., bandwidth and transmit power).
  • multiple- access systems include code division multiple access (CDMA) systems, wideband code division multiple access (W-CDMA) systems, time division multiple access (TDMA) systems, frequency division multiple access (FDMA) systems, orthogonal frequency division multiple access (OFDMA) systems, single-carrier frequency division multiple access (SC-FDMA) systems, 3rd Generation Partnership Project (3GPP) Long Term Evolution (LTE) systems and spatial division multiple access (SDMA) systems.
  • CDMA code division multiple access
  • W-CDMA wideband code division multiple access
  • TDMA time division multiple access
  • FDMA frequency division multiple access
  • OFDMA orthogonal frequency division multiple access
  • SC-FDMA single-carrier frequency division multiple access
  • the radio frequency package on package (PoP) circuit 104 may be implemented as part of the front end circuitry of the wireless device 102.
  • Front end circuitry may refer to all circuitry between an antenna and a first intermediate frequency (IF) stage (e.g., a frequency downconversion stage) on the wireless device 102.
  • Front end circuitry may be implemented on a printed circuit board (PCB), a radio frequency integrated circuit (RFIC), on a substrate, such as silicon, or on another medium on which front end circuitry may be implemented.
  • radio frequency components may refer to circuitry and other components used as part of the front end circuitry of the wireless device 102. In implementing the radio frequency components on the radio frequency package on package (PoP) circuit 104, various considerations, such as isolation and insertion loss performance may be considered.
  • a first radio frequency package 106 on the radio frequency package on package (PoP) circuit 104 may include various radio frequency components.
  • the first radio frequency package 106 may include one or more filters 110.
  • Different types of filters 110 may include bandpass filters, low pass filters, high pass filters, tunable filters, surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters.
  • a bandpass filter, low pass filter, high pass filter and tunable filter may be implemented using microelectromechanical system (MEMS), silicon or other materials.
  • the filters 110 e.g., surface acoustic wave (SAW) or bulk acoustic wave (BAW) filters
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • the first radio frequency package 106 may implement a combination of different kinds of filters.
  • the first radio frequency package 106 may also include one or more low noise amplifiers (LNAs) 114 and/or switches 116 (e.g., radio frequency switches).
  • LNAs low noise amplifiers
  • Different types of low noise amplifiers (LNAs) 114 may include distributed gain low noise amplifiers (LNAs), tunable low noise amplifiers (LNAs), low gain low noise amplifiers (LNAs) and high gain low noise amplifiers (LNAs).
  • LNAs low noise amplifiers
  • LNAs low noise amplifiers
  • LNAs low noise amplifiers
  • Each of the low noise amplifiers (LNAs) 114 may be used for amplifying a signal (e.g., a filtered signal).
  • Each of the low noise amplifiers (LNAs) 114 may be coupled to one or more radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • one or more switches 116 may be implemented on the first radio frequency package 106 to provide switching capabilities between radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • the switches 116 may provide multiple filter receive outputs.
  • the first radio frequency package 106 may use a low noise amplifier (LNA) 114, switch 116 or nothing in its place.
  • LNA low noise amplifier
  • the first radio frequency package 106 may also include one or more duplexers 112.
  • the duplexers 112 may be implemented using microelectromechanical systems (MEMS), surface acoustic wave (SAW) technology, bulk acoustic wave (BAW) technology, etc.
  • MEMS microelectromechanical systems
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • the duplexers 112 may allow bi-directional communication between radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • One or more duplexers 112 may be coupled to one or more antennas for rejecting noise, rejecting undesired interfering signals and otherwise duplexing a signal passing through the radio frequency package on package (PoP) circuit 104.
  • the first radio frequency package 106 may also include surface mount technology (SMT) components 182a, including resistors 184a, capacitors 186a and inductors 188a.
  • the surface mount technology (SMT) components 182a may be used to optimize the filters 110, low noise amplifiers (LNAs) 114 and other radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • the surface mount technology (SMT) components 182a may also be used to operate or interface with any internal or external components of the radio frequency package on package (PoP) circuit 104.
  • the surface mount technology (SMT) components 182 may be made in a thin film process.
  • a second radio frequency package 108 on the radio frequency package on package (PoP) circuit 104 may also include various radio frequency components.
  • the radio frequency components on the second radio frequency package 108 may be similar to those described above in with regard to the first radio frequency package 106.
  • each of the radio frequency components described in connection with the second radio frequency package 108 may be implemented on the first radio frequency package 106. Therefore, each of the radio frequency components described herein may be interchangeable between the first radio frequency package 106 and the second radio frequency package 108.
  • the second radio frequency package 108 may also include one or more antenna switches 122. Where a wireless device 102 includes multiple antennas, the second radio frequency package 108 may include one or more corresponding antenna switches 122 for each antenna. The antenna switches 122 may be used to switch between different modes, such as receiving, transmitting, mapping, tracking or otherwise improving performance of the wireless device 102. One or more antenna switches 122 may also be used when switching between use of different antennas and/or coupling one or more antennas to various radio frequency components within the radio frequency package on package (PoP) circuit 104.
  • the second radio frequency package 108 may also include one or more power amplifiers 124.
  • Each power amplifier 124 may be used to amplify one or more frequency bands of signals passing through the radio frequency package on package (PoP) circuit 104.
  • Examples of power amplifiers 124 may include high gain power amplifiers, distributed gain power amplifiers, low gain power amplifiers or other types of power amplifiers 124 for amplifying a signal passing through the radio frequency package on package (PoP) circuit 104 and transmitting a signal from an antenna of the wireless device 102.
  • Each of the power amplifiers 124 may be used in connection with front end circuitry for the wireless device 102.
  • the second radio frequency package 108 may also include surface mount technology (SMT) components 182b, including resistors 184b, capacitors 186b and inductors 188b.
  • the surface mount technology (SMT) components 182b may be used to optimize the filters 110, low noise amplifiers (LNAs) 114 and other radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • the surface mount technology (SMT) components 182b may also be used to operate or interface with any internal or external components of the radio frequency package on package (PoP) circuit 104.
  • the first radio frequency package 106 may include one or more switches 116 and the second radio frequency package 108 may include one or more duplexers 112 while neither of the radio frequency packages 106, 108 include a power amplifier 124.
  • Other configurations of radio frequency components may be used. Some additional configurations are described in more detail below.
  • each of the first radio frequency package and the second radio frequency package may include a substrate 120a-b.
  • Each of the radio frequency components may be implemented on the substrate 120a-b through an etching, soldering or other process for implementing the radio frequency components on the first radio frequency package 106 and the second radio frequency package 108.
  • the radio frequency components may also be implemented using other types of materials (i.e., using other materials for a base), including printed circuit boards (PCBs), radio frequency integrated circuits (RFICs), silicon wafers, ceramic substrates, extended wafer level packaging technologies or other materials on which front end circuitry may be implemented.
  • PCBs printed circuit boards
  • RFICs radio frequency integrated circuits
  • silicon wafers silicon wafers
  • ceramic substrates ceramic substrates
  • extended wafer level packaging technologies or other materials on which front end circuitry may be implemented.
  • MEMS microelectromechanical system
  • Each of the radio frequency components on the first radio frequency package 106 and the second radio frequency package 108 may be housed within individual casings.
  • a casing may also be referred to as a package, a chip or a system.
  • a casing may typically protect and/or shield electrical components that are sold and/or placed into a larger circuit.
  • One or more of the radio frequency components may be enclosed within a casing having external pins for coupling one or more of the radio frequency components housed within the casing to other radio frequency components on the radio frequency package on package (PoP) circuit 104.
  • PoP radio frequency package on package
  • each of the casings for housing the radio frequency components may include multiple conductive pins for coupling the inputs and outputs of each of the radio frequency components to other radio frequency components via electrical paths on the substrate, die, printed circuit board (PCB), radio frequency integrated circuit (RFIC) or other surface.
  • PCB printed circuit board
  • RFIC radio frequency integrated circuit
  • multiple radio frequency components may be included within a single casing.
  • some or all of the filters on the first radio frequency package 106 may be housed within a single casing.
  • different types of radio frequency components may be housed within the same casing.
  • one or more switches 116 and low noise amplifiers (LNAs) 114 on the first radio frequency package 106 may be housed within a single casing.
  • casings may enclose various radio frequency components, many passive structures, such as inductors, transformers, capacitors, resistors or other electromagnetic structures may be implemented directly in or on one or both of the substrates 120a-b.
  • Each of the first radio frequency package 106 and the second radio frequency package 108 may include one or more interconnects 118a-b.
  • the interconnects 118a-b may be used to attach the first radio frequency package 106 to the second radio frequency package 108.
  • the interconnects 118a-b may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 106 and the second radio frequency package 108. Examples of interconnects 118a-b that may be used include soldering balls, vias and other materials that may connect the first radio frequency package 106 and the second radio frequency package 108. Further, any number of interconnects 118a-b may be used for connecting the radio frequency packages or for providing electrical connections between radio frequency components on different radio frequency packages 106, 108.
  • the first radio frequency package 106 may include multiple passive radio frequency components and/or active radio frequency components.
  • all of the radio frequency components on the first radio frequency package 106 are passive radio frequency components, such as filters 110, switches 116, duplexers 112 or other components that are capable of operating without relying on a source of energy, such as a direct current (DC) power source.
  • all of the radio frequency components on the second radio frequency package 108 are active radio frequency components, such as power amplifiers 124, transistors or other components that rely on a source of energy, such as a direct current (DC) power source.
  • DC direct current
  • a radio frequency package on package (PoP) circuit 104 by separating the active radio frequency components on a first radio frequency package 106 from the passive radio frequency components on a second radio frequency package 108, the radio frequency package on package (PoP) circuit 104 may only be required to supply power to the second radio frequency package 108 (and not the first radio frequency package 106).
  • the second radio frequency package 108 may include primarily active radio frequency components (e.g., power amplifiers) and surface- mount technology (SMT) components 182b while the first radio frequency package 106 includes a combination of passive and active radio frequency components.
  • the first radio frequency package 106 may include one or more low noise amplifiers (LNAs) 114 together with filters 110, duplexers 112 and switches 116.
  • the low noise amplifiers (LNAs) 114 may be used to tie different multiplexers (MUXes) together on the first radio frequency package 106.
  • the first radio frequency package 106 and the second radio frequency package 108 may be customized to compensate for additional factors, such as isolation, ground inductance or other factors that may degrade the quality of a signal passing through the radio frequency package on package (PoP) circuit 104.
  • radio frequency components on the first radio frequency package 106 may be designed or customized to reduce the effects of ground inductance.
  • ground inductance may degrade the performance of radio frequency components, such as surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters and other filters having a high quality (Q) factor.
  • radio frequency components such as surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters and other filters having a high quality (Q) factor.
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • Ground inductance may also increase the power consumption of active components, such as power amplifiers. The effects of ground inductance may be larger on the top radio frequency package than the bottom radio frequency package.
  • Reducing the effects of ground inductance may be obtained by designing one or more filters 110 (e.g., surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters) to tolerate additional ground inductance.
  • filters 110 such as a surface acoustic wave (SAW) filter or a bulk acoustic wave (BAW) filter may experience increased ground inductance when placed in the top radio frequency package (e.g., the first radio frequency package 106) than when placed in the bottom radio frequency package (e.g., the second radio frequency package 108).
  • the filters 110 may be designed assuming the ground parasitics of the first radio frequency package 106 are in place (such as ground inductance) in order to achieve a desired frequency response of the filters 110.
  • radio frequency components on the first radio frequency package 106 may be modified in order to compensate for the additional ground inductance of the first radio frequency package 106. This anticipation of ground inductance may reduce or eliminate out of band isolation degradation of filters 110 and other radio frequency components on the first radio frequency package 106.
  • certain types of power amplifiers 124 may be placed on the top radio frequency package (e.g., the first radio frequency package 106).
  • the top radio frequency package e.g., the first radio frequency package 106
  • differential power amplifiers may be customized to tolerate the additional ground inductance of the top radio frequency package. Therefore, certain power amplifiers 124, such as differential power amplifiers, may be placed on the top radio frequency package with the filters 110 and other radio frequency components.
  • the bottom radio frequency package (e.g., the second radio frequency package 108) may include a variety of passive and active radio frequency components.
  • the second radio frequency package 108 may include one or more filters 110 in addition to power amplifiers 124 and other radio frequency components. In some configurations, these filters 110 may be placed on the second radio frequency package 108 without requiring compensation for additional ground inductance, in contrast to the filters 110 and other components on the first radio frequency package 106 (which require compensation for additional ground inductance).
  • the radio frequency package on package (PoP) circuit 104 may be designed to have a certain thickness.
  • the radio frequency package on package (PoP) circuit 104 may be designed to have a thickness of approximately 1 millimeter (mm) or less.
  • the radio frequency components on the first radio frequency package 106 and/or the second radio frequency package 108 may be back-grinded in order to meet certain height requirements of the radio frequency package on package (PoP) circuit 104.
  • radio frequency components may also be separated between radio frequency packages 106, 108 in order to accomplish a desired thickness of the radio frequency package on package (PoP) circuit 104.
  • a first radio frequency package 106 may include one or more filters 110 and surface mount technology (SMT) components 182 having a first thickness while the second radio frequency package 108 may include one or more power amplifiers and other radio frequency components that have a second thickness.
  • SMT surface mount technology
  • the different radio frequency packages 106, 108 may also be implemented using different types of material.
  • the radio frequency components on the first radio frequency package 106 may be implemented using a die of a certain thickness (e.g., 100 micrometers ( ⁇ )) while the radio frequency components on the second radio frequency package 108 are implemented using different materials having a different thickness from the die.
  • Either of the radio frequency packages 106, 108 may be placed on the bottom or top package of the radio frequency package on package (PoP) circuit 104.
  • Each of the first radio frequency package 106 and the second radio frequency package 108 may be designed to accomplish a desired thickness of the radio frequency package on package (PoP) circuit 104.
  • Another benefit of separating radio frequency components into a first radio frequency package 106 and a second radio frequency package 108 may be for manufacturing purpose, such as obtaining the first radio frequency package 106 from a first manufacturer and the second radio frequency package 108 from a second manufacturer. Using components from multiple manufacturers may allow for a wider variety of radio frequency components that can be implemented within the wireless device 102. Using different radio frequency components on the first radio frequency package 106 allows for selecting or creating different flavors of one or more first radio frequency packages 106 to address different customer and market requirements while the second radio frequency package 108 remains unchanged.
  • first radio frequency packages 106 on top of a second radio frequency package 108 may allow for addressing different market needs with a single second radio frequency package 108 within a radio frequency package on package (PoP) circuit 104 in the design of a wireless device 102. Further, stacking the first radio frequency package 106 and the second radio frequency package 108 in a radio frequency package on package (PoP) circuit 104 may result in a more condensed front end circuit on a wireless device 102. In other configurations, additional radio frequency packages (beyond the first radio frequency package 106 and the second radio frequency package 108) may be stacked in a vertical configuration. Additional radio frequency packages may include different radio frequency components from the first radio frequency package 106 and the second radio frequency package 108.
  • Radio frequency components in a radio frequency package on package (PoP) circuit 104 within a wireless device 102 may include additional consideration for optimizing the performance of the radio frequency components. For example, where the top package is the first radio frequency package 106, duplexers 112 placed on the first radio frequency package 106 may experience increased ground (GND) parasitics when compared to a duplexer 112 on a non-package on package (PoP) circuit. Similar effects may take place for low noise amplifiers (LNAs) 114, switches 116, power amplifiers 124 and other radio frequency components.
  • LNAs low noise amplifiers
  • the radio frequency components may be modified/optimized for optimal electrical and/or thermal coupling between the radio frequency components.
  • some radio frequency components such as surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters, may need to comply with overall height requirements of the stacked packages when implemented in a radio frequency package on package (PoP) circuit 104. Height requirements may vary depending on specific wireless devices 102 or types of wireless devices 102. The size of the wireless device 102 (e.g., thickness of a phone) may lower or raise height requirements for radio frequency components on each of the packages.
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • FIG. 2 is a block diagram illustrating a radio frequency package on package (PoP) circuit 204.
  • the radio frequency package on package (PoP) circuit 204 of figure 2 is one configuration of the radio frequency package on package (PoP) circuit 104 described above in connection with Figure 1.
  • the radio frequency package on package (PoP) circuit 204 may be implemented as part of the front end circuitry of a wireless device 102.
  • the radio frequency package on package (PoP) circuit 204 may include a first radio frequency package 206 and a second radio frequency package 208.
  • the first radio frequency package 106 and the second radio frequency package 108 may be vertically oriented such that the first radio frequency package 106 is physically on top of the second radio frequency package 108.
  • the second radio frequency package 108 may be on top of the first radio frequency package 106.
  • the first radio frequency package 206 may include various radio frequency components, including one or more filters 210, duplexers 212, low noise amplifiers (LNAs) 214 and switches 216.
  • the first radio frequency package 206 may also include surface mount technology (SMT) components 282a, including resistors 284a, capacitors 286a and inductors 288a. Each of the radio frequency components may be implemented on a substrate 220a or other material.
  • the second radio frequency package 208 may also include various radio frequency components, including one or more antenna switches 222 and power amplifiers 224.
  • the second radio frequency package 208 may also include surface mount technology (SMT) components 282b, including resistors 284b, capacitors 286b and inductors 288b.
  • the radio frequency components on the second radio frequency package 208 may be implemented on a substrate 220b or other suitable base material.
  • the first radio frequency package 206 includes passive radio frequency components while the second radio frequency package 208 includes active radio frequency components. Similar to the radio frequency components described above in connection with Figure 1 , any of the radio frequency components illustrated in Figure 2 may be included on the first radio frequency package 206 and/or the second radio frequency package 208.
  • the first radio frequency package 206 may be coupled to the second radio frequency package 208 via one or more interconnects 218.
  • the interconnects 218 may be on either or both surfaces of the first radio frequency package 206 and the second radio frequency package 208.
  • the interconnects 218 may be used to attach the first radio frequency package 206 to the second radio frequency package 208.
  • the interconnects 218 may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 206 and radio frequency components on the second radio frequency package 208. Examples of types of interconnects 218 that may be used include soldering balls, vias and other materials that may connect the first radio frequency package 206 and the second radio frequency package 208. Any number of interconnects 218 may be used for connecting the radio frequency packages 206, 208 or for providing electrical connections between radio frequency components on different radio frequency packages 206, 208.
  • the interconnects 218 may include soldering balls.
  • the soldering balls may be positioned between printed circuit boards (PCBs) corresponding to each of the first radio frequency package 206 and the second radio frequency package 208.
  • PCBs printed circuit boards
  • Each of the first radio frequency package 206 and the second radio frequency package 208 may include solder mask layers with surface mount solder balls attached to the radio frequency packages 206, 208 via metal interconnect layers.
  • Each of the soldering balls may be connected to a different node of the radio frequency package on package (PoP) circuit 204, providing different reference voltages accessible by different radio frequency components.
  • PoP radio frequency package on package
  • the interconnects 218 may use silicon vias to connect the first radio frequency package 206 to the second radio frequency package 208.
  • silicon vias include a bridge via and a plug via.
  • the vias used may also be implemented using whole via technology on both the first radio frequency package 206 and the second radio frequency package 208.
  • silicon vias (or other types of vias) may be implemented in a radio frequency package on package (PoP) circuit 204 that implements stacked dies.
  • PoP radio frequency package on package
  • interconnects 218 may be as small as 2-6 microns, allowing for tighter package designs and a smaller size of the radio frequency package on package (PoP) circuit. Moreover, smaller interconnects 218 may result in shorter electrical paths, leading to improved performance.
  • PoP radio frequency package on package
  • radio frequency components on the radio frequency package on package (PoP) circuit 104 may also reduce routing area between radio frequency components where one or more interconnects 218 are inside the radio frequency packages 206, 208.
  • Implementing the interconnects 218 within each of the first radio frequency package 206 and second radio frequency package 208 may allow for finer routing.
  • many interconnects 218 may be routed as 50 Ohm impedance lines. The traces may consume more board area than other interconnects 218 and absorb the traces into the package to save area on each radio frequency package 206, 208.
  • absorbed radio frequency traces may not need to be routed as 50 Ohm lines within each radio frequency package 206, 208 (e.g., electrical behavior of traces can be compensated/matched inside the package) with reduced trace losses when compared to phone board routing.
  • FIG 3 is a side view of a radio frequency package on package (PoP) circuit 304.
  • the radio frequency package on package (PoP) circuit 304 may be one configuration of the radio frequency package on package (PoP) circuits 104, 204 described above in connection with Figure 1 and Figure 2.
  • the radio frequency package on package (PoP) circuit 304 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 304 may include a first radio frequency package 306 and a second radio frequency package 308.
  • the first radio frequency package 306 and the second radio frequency package 308 may be stacked in a vertical configuration.
  • the first radio frequency package 306 may include various radio frequency components, including one or more filters 310, duplexers 312, low noise amplifiers (LNAs) 314 and switches 316. Each of the radio frequency components may be implemented on a substrate 320a. Each of the radio frequency components may be attached to the substrate 320a using one or more chip to substrate interconnects 382.
  • the second radio frequency package 308 may also include various radio frequency components, including one or more antenna switches 322 and power amplifiers 324. Similar to the first radio frequency package 306, the radio frequency components of the second radio frequency package 308 may be implemented on a substrate 320b using one or more chip to substrate interconnects 382.
  • chip to substrate interconnects 382 may be used. Examples of chip to substrate interconnects 382 that may be used include soldering balls, vias and other materials for connecting the radio frequency components to a substrate 320. In some configurations, the chip to substrate interconnects 382 are smaller than the interconnects 318 used for connecting the radio frequency packages 306, 308.
  • the casings used for housing one or more radio frequency components may include multiple conductive pins for coupling the inputs and outputs for each of the radio frequency components to other radio frequency components within the radio frequency package on package (PoP) circuit 304.
  • the conductive pins on each casing may be coupled to the substrate 320 using the chip to substrate interconnects 382. Separate casings may be used for each radio frequency component.
  • different types of radio frequency components may be housed within the same casing.
  • one or more low noise amplifiers (LNAs) 314 and switches 316 may be housed within a single casing.
  • LNAs low noise amplifiers
  • each of the radio frequency components described in connection with the first radio frequency package 306 and the second radio frequency package 308 may be implemented on either the first or second radio frequency package 306, 308. Therefore, each of the radio frequency components described herein may be interchangeable between the first radio frequency package 306 and the second radio frequency package 308.
  • the first radio frequency package 306 and the second radio frequency package 308 may be in a vertical configuration, with the first radio frequency package 306 positioned on top of the second radio frequency package 308.
  • the first radio frequency package 306 may be connected to the second radio frequency package 308 via one or more interconnects 318a.
  • the one or more filters 310, duplexers 312, low noise amplifiers (LNAs) 314 and switches 316 of the first radio frequency package 306 may be located above a top surface of the substrate 320a.
  • One or more interconnects 318a may be located on the bottom surface of the substrate 320a of the first radio frequency package 306.
  • the bottom surface of the substrate 320a of the first radio frequency package 306 may be facing the top surface of the substrate 320b of the second radio frequency package 308.
  • the one or more antenna switches 322 and power amplifiers 324 of the second radio frequency package 308 may be placed on the top surface of the substrate 320b.
  • the second radio frequency package 308 may also include one or more interconnects 318b on the top surface of the substrate 320b facing the first radio frequency package 306.
  • the vertical configuration of the radio frequency package on package (PoP) circuit 304 may be implemented by stacking the first radio frequency package 306 on top of the second radio frequency package 308.
  • the interconnects 318a on the bottom surface of the first radio frequency package 306 may be configured such that they contact the interconnects 318b on the top surface of the second radio frequency package 308.
  • Other configurations may include additional radio frequency packages stacked in a vertical configuration.
  • FIG 4 is a flow diagram of a method 400 for generating a radio frequency package on package (PoP) circuit 104.
  • the method 400 may be performed by an engineer, technician or a computer. In one configuration, the method 400 may be performed by a fabrication machine.
  • a first radio frequency package 106 may be obtained 402.
  • the first radio frequency package 106 may include passive radio frequency components. In some configurations, all of the radio frequency components on the first radio frequency package 106 are passive radio frequency components.
  • a second radio frequency package 108 may also be obtained 404.
  • the second radio frequency package 108 may include active radio frequency components. In some configurations, all of the radio frequency components on the second radio frequency package 108 are active radio frequency components. Further, the first radio frequency package 106 and the second radio frequency package 108 may each include a combination of active and passive radio frequency components.
  • the first radio frequency package 106 and the second radio frequency package 108 may be connected 406 in a vertical configuration.
  • the bottom surface of the first radio frequency package 106 may be connected to the top surface of the second radio frequency package 108 via one or more interconnects 118.
  • the various radio frequency components may be connected to the top surface of each of the first radio frequency package 106 and the second radio frequency package 108.
  • the interconnects 118 on the bottom surface of the first radio frequency package 106 may connect to interconnects 118 on the top surface of the second radio frequency package 108.
  • the radio frequency package on package (PoP) circuit 104 may also include additional packages stacked together in a vertical configuration.
  • the substrate 320a of the first radio frequency package 206, the substrate 320b of the second radio frequency package 208 and the radio frequency components on the second radio frequency package 208 may be assembled in a first step.
  • the radio frequency components of the first radio frequency package 106 may be assembled in a second step.
  • FIG. 5 is a block diagram illustrating one configuration of a radio frequency package on package (PoP) circuit 504.
  • the radio frequency package on package (PoP) circuit 504 of Figure 5 may be one configuration of the radio frequency package on package (PoP) circuit 104, 204, 304 described above in connection with Figure 1, Figure 2 and Figure 3.
  • the radio frequency package on package (PoP) circuit 504 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 504 may include a first radio frequency package 506 and a second radio frequency package 508.
  • the first radio frequency package 506 and the second radio frequency package 508 may be implemented in a vertical configuration.
  • the first radio frequency package 506 may include various radio frequency components.
  • the first radio frequency package 506 may include a first low noise amplifier (LNA) 526a and a second low noise amplifier (LNA) 526b.
  • the first radio frequency package 506 may also include a duplexer B l 528a, a duplexer B2 528b, a duplexer B4 528c, a duplexer B5 528d and a duplexer B8 528e.
  • the first radio frequency package 506 may also include a first switch 530a and a second switch 530b.
  • the first radio frequency package 506 may further include a receiver (Rx) global system for mobile (GSM) digital cellular system (DCS) band filter 532.
  • GSM global system for mobile
  • DCS digital cellular system
  • Each of the radio frequency components of the first radio frequency package 506 may be implemented on a substrate 520a.
  • the radio frequency components may also be implemented using other types of materials instead of a substrate 520a, including printed circuit boards (PCBs), radio frequency integrated circuits
  • the second radio frequency package 508 may include various radio frequency components.
  • the second radio frequency package 508 may include an antenna switch 534.
  • the second radio frequency package 508 may include a 3G/4G power amplifier Bl 536a, a 3G/4G power amplifier B2 536b, a 3G/4G power amplifier B4 536c, a 3G/4G power amplifier B5 536d and a 3G/4G power amplifier B8 536e.
  • the second radio frequency package 508 may also include a global system for mobile (GSM) communication power amplifier 538.
  • GSM global system for mobile
  • other types of systems may be used, in addition to global system for mobile (GSM), 3G and 4G systems.
  • each of the radio frequency components on the second radio frequency package 508 may be implemented on a substrate 520b.
  • the radio frequency components may also be deposited on other types of material instead of a substrate 520b, including printed circuit boards (PCBs), radio frequency integrated circuits (RFICs), silicon wafers, or another medium on which radio frequency components or front end circuitry may be implemented.
  • PCBs printed circuit boards
  • RFICs radio frequency integrated circuits
  • silicon wafers or another medium on which radio frequency components or front end circuitry may be implemented.
  • the first radio frequency package 506 and the second radio frequency package 508 may be connected via one or more interconnects 518 between surfaces of the radio frequency packages 506, 508.
  • the interconnects 518 may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 506 and radio frequency components on the second radio frequency package 508. Examples of types of interconnects 518 that may be used include soldering balls, vias and other materials that may connect the first radio frequency package 506 and the second radio frequency package 508. Further, any number of interconnects 518 may be used for connecting the radio frequency packages 506, 508 or for providing electrical connections between radio frequency components on different radio frequency packages 506, 508.
  • FIG. 6 is a block diagram illustrating another configuration of a radio frequency package on package (PoP) circuit 604.
  • the radio frequency package on package (PoP) circuit 604 of Figure 6 may be one configuration of the radio frequency package on package (PoP) circuit 104, 204, 304 described above in connection with Figure 1, Figure 2 and Figure 3.
  • the radio frequency package on package (PoP) circuit 604 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 604 may include a first radio frequency package 606 and a second radio frequency package 608.
  • the first radio frequency package 606 and the second radio frequency package 608 may be implemented in a vertical configuration.
  • the first radio frequency package 606 may include various radio frequency components.
  • the first radio frequency package 606 may include multiple surface acoustic wave (SAW) filters 640a-e, 642a-c.
  • the first radio frequency package 606 may include a Bl surface acoustic wave (SAW) filter 640a, a B2 surface acoustic wave (SAW) filter 640b, a B4 surface acoustic wave (SAW) filter 640c, a B5 surface acoustic wave (SAW) filter 640d, a B8 surface acoustic wave (SAW) filter 640e, a first long term evolution (LTE) surface acoustic wave (SAW) filter 642a, a second long term evolution (LTE) surface acoustic wave (SAW) filter 642b and a third long term evolution (LTE) surface acoustic wave (SAW) filter 642c.
  • SAW surface acoustic wave
  • SAW
  • the surface acoustic wave (SAW) filters 640, 642 may be implemented on a radio frequency integrated circuit (RFIC) 644a.
  • the surface acoustic wave (SAW) filters 640, 642 may also be implemented using other types of materials, including printed circuit boards (PCBs), silicon wafers, various substrates or another medium on which radio frequency components or front end circuitry may be implemented.
  • the second radio frequency package 608 may include various radio frequency components. In one configuration, the second radio frequency package 608 may include a first switch 652a, a second switch 652b and a third switch 652c.
  • the second radio frequency package 608 may also include a midband (MB) low noise amplifier (LNA) 648a, a low band (LB) low noise amplifier (LNA) 648b and a high band (HB) low noise amplifier (LNA) 648c.
  • the second radio frequency package 608 may also include a digital receiver antenna single pole multi throw (SPxT) switch 650.
  • Each of the radio frequency components may be implemented on a radio frequency integrated circuit (RFIC) 644b.
  • the radio frequency components may also be implemented on other types of material, including printed circuit boards (PCBs), silicon wafers, various substrates or another medium on which radio frequency components or front end circuitry may be implemented.
  • the first radio frequency package 606 and the second radio frequency package 608 may be connected to each other using one or more vias 646.
  • the vias 646 may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 606 and radio frequency components on the second radio frequency package 608.
  • Other types of interconnects 118 may be used for connecting the first radio frequency package 606 and the second radio frequency package 608.
  • any number of vias 646 may be used in the radio frequency package on package (PoP) circuit 604.
  • FIG. 7 is a side view of another configuration of a radio frequency package on package (PoP) circuit 704.
  • the radio frequency package on package (PoP) circuit 704 of Figure 7 may be one configuration of the radio frequency package on package (PoP) circuit 604 of Figure 6.
  • the radio frequency package on package (PoP) circuit 704 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 704 may include a first radio frequency package 706 and a second radio frequency package 708.
  • the first radio frequency package 706 and the second radio frequency package 708 may be stacked in a vertical configuration.
  • the first radio frequency package 706 may include various radio frequency components, including multiple surface acoustic wave (SAW) filters 740a-c.
  • SAW surface acoustic wave
  • all of the radio frequency components on the first radio frequency package 706 are surface acoustic wave (SAW) filters 740a-c.
  • one or more other types of filters may be used, such as bandpass filters, tunable filters and/or bulk acoustic wave (BAW) filters.
  • Each of the surface acoustic wave (SAW) filters 740a-c may be located on a radio frequency integrated circuit (RFIC) 744a.
  • RFIC radio frequency integrated circuit
  • Each of the surface acoustic wave (SAW) filters and other radio frequency components may be connected to the radio frequency integrated circuit (RFIC) 744a using one or more chip to substrate interconnects 782. Additionally, one or more surface acoustic wave (SAW) filters 740 may be enclosed within individual casings.
  • the casings may include conductive pins coupled to each of the surface acoustic wave (SAW) filters 740.
  • the casings may be implemented on the radio frequency integrated circuit (RFIC) 744a.
  • the second radio frequency package 708 may include various radio frequency components, including one or more antenna switches 750, low noise amplifiers (LNAs) 748 and additional switches 752. Similar to the first radio frequency package 706, each of the radio frequency components in the second radio frequency package 708 may be located on a radio frequency integrated circuit (RFIC) 744b. Each of the radio frequency components on the second radio frequency package 708 may be connected to the radio frequency integrated circuit (RFIC) 744b using one or more chip to substrate interconnects 782. Additionally, one or more of the radio frequency components may be enclosed within individual casings. The casings may include conductive pins coupled to the radio frequency components enclosed within each casing. The casings may be implemented on the radio frequency integrated circuit (RFIC) 744b. Each casing may enclose one or more of the radio frequency components.
  • RFIC radio frequency integrated circuit
  • the first radio frequency package 706 and the second radio frequency package 708 may be connected to each other using one or more vias 746a-b.
  • vias 746 may include a bridge via and a plug via.
  • the vias 746a- b may be silicon vias.
  • the radio frequency integrated circuit (RFIC) 744a of the first radio frequency package 706 and the radio frequency integrated circuit (RFIC) 744b of the second radio frequency package 708 may each implement stacked dies with vias 746a-b for connecting the radio frequency components of the first radio frequency package 706 to the radio frequency components of the second radio frequency package 708.
  • Figure 8 is a block diagram illustrating yet another configuration of a radio frequency package on package (PoP) circuit 804.
  • the radio frequency package on package (PoP) circuit 804 of Figure 8 may be one configuration of the radio frequency package on package (PoP) circuit 104, 204, 304 described above in connection with Figure 1, Figure 2 and Figure 3.
  • the radio frequency package on package (PoP) circuit 804 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 804 may include a first radio frequency package 806 and a second radio frequency package 808.
  • the first radio frequency package 806 and the second radio frequency package 808 may be implemented in a vertical configuration.
  • the first radio frequency package 806 may include various radio frequency components.
  • the first radio frequency package 806 may include multiple surface acoustic wave (SAW) filters 854, 856, 858.
  • the first radio frequency package 806 may include a B38 surface acoustic wave (SAW) filter 854, a B40 surface acoustic wave (SAW) filter 856 and an extended global platform (XGP) surface acoustic wave (SAW) filter 858.
  • the extended global platform (XGP) may refer to a Japanese frequency band which is a subset of the band B41.
  • Each of the surface acoustic wave (SAW) filters 854, 856, 858 may be implemented on a printed circuit board (PCB) 860a.
  • the radio frequency components may also be implemented using other types of materials, including radio frequency integrated circuits (RFIC), silicon wafers, various substrates or another medium on which radio frequency components or front end circuitry may be implemented.
  • RFIC radio frequency integrated circuits
  • the second radio frequency package 808 may include various radio frequency components.
  • the second radio frequency package 808 may include a mode switch 864.
  • the second radio frequency package 808 may also include multiple power amplifiers 866, 868, 870.
  • the second radio frequency package 808 may include a power amplifier B38 866, a power amplifier B40 868 and a power amplifier extended global platform (XGP) 870.
  • the second radio frequency package 808 may also include a high band (HB) low noise amplifier (LNA) 872 and a switch 874.
  • HB high band
  • LNA low noise amplifier
  • Each of the radio frequency components may be implemented on a printed circuit board (PCB) 860b.
  • the radio frequency components may also be implemented on other types of material, including radio frequency integrated circuits (RFIC), silicon wafers, various substrates or another medium on which radio frequency components or front end circuitry may be implemented.
  • RFIC radio frequency integrated circuits
  • silicon wafers various substrates or another medium on which radio frequency components or front end
  • the first radio frequency package 806 and the second radio frequency package 808 may be connected to each other using one or more soldering balls 862 on the surfaces of the printed circuit boards (PCBs) 860a-b.
  • each of the first radio frequency package 806 and the second radio frequency package 808 may include solder mask layers with surface mount soldering balls 862 attached to the radio frequency packages 806, 808 via metal interconnect layers.
  • Each of the soldering balls 862 may be connected to different nodes of the radio frequency package on package (PoP) circuit 804.
  • the soldering balls 862 may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 806 and the second radio frequency package 808. Any number of soldering balls 862 may be used in the radio frequency package on package (PoP) circuit 804. Further, other types of interconnects 118 may be used for connecting the first radio frequency package 806 and the second radio frequency package 808.
  • FIG. 9 is a side view of yet another configuration of a radio frequency package on package (PoP) circuit 904.
  • the radio frequency package on package (PoP) circuit 904 of Figure 9 may be one configuration of the radio frequency package on package (PoP) circuit 804 of Figure 8.
  • the radio frequency package on package (PoP) circuit 904 may be implemented as part of the front end circuitry of the wireless device 102.
  • the radio frequency package on package (PoP) circuit 904 may include a first radio frequency package 906 and a second radio frequency package 908.
  • the first radio frequency package 906 and the second radio frequency package 908 may be stacked in a vertical configuration.
  • the first radio frequency package 906 may include various radio frequency components, including multiple surface acoustic wave (SAW) filters 954, 956, 958.
  • the first radio frequency package 906 includes a B38 surface acoustic wave (SAW) filter 954, a B40 surface acoustic wave (SAW) filter 956 and an extended global platform (XGP) surface acoustic wave (SAW) filter 958.
  • SAW surface acoustic wave
  • XGP extended global platform
  • SAW surface acoustic wave
  • Each of the surface acoustic wave (SAW) filters 954, 956, 958 may be implemented on a printed circuit board (PCB) 960a.
  • PCB printed circuit board
  • Each of the surface acoustic wave (SAW) filters 954, 956, 958 may be also connected to the printed circuit board (PCB) 960a using one or more chip to substrate interconnects 982. Additionally, one or more surface acoustic wave (SAW) filters 954, 956, 958 may be enclosed within individual casings.
  • the casings may include conductive pins coupled to each of the surface acoustic wave (SAW) filters 954, 956, 958.
  • the casings may be implemented on the printed circuit board (PCB) 960a. Each casing may enclose one or more surface acoustic wave (SAW) filters 954, 956, 958.
  • the second radio frequency package 908 may include various frequency components, including one or more switches 976, power amplifiers 978 and low noise amplifiers (LNAs) 980. Similar to the first radio frequency package 906, each of the radio frequency components may be deposited on a printed circuit board (PCB) 960b. Each of the radio frequency components may also be connected to the printed circuit board 960b using one or more chip to substrate interconnects 982. Additionally, one or more of the radio frequency components may be enclosed within individual casings. The casings may include conductive pins coupled to the radio frequency components within each casing. The casings may be implemented on the printed circuit board (PCB) 960b. Each casing may enclose one or more of the radio frequency components.
  • PCB printed circuit board
  • the first radio frequency package 906 and the second radio frequency package 908 may be connected by way of one or more soldering balls 962a-b.
  • each of the first radio frequency package 906 and the second radio frequency package 908 may include solder mask layers with surface mount soldering balls 962a-b attached to the radio frequency packages 906, 908 via metal interconnect layers.
  • Each of the soldering balls 962a-b may be connected to a different node of the radio frequency package on package (PoP) circuit 904.
  • the soldering balls 962a-b may also be used to provide an electrical connection between radio frequency components on the first radio frequency package 906 and the second radio frequency package 908. Further, other types of interconnects 118 may be used for connecting the first radio frequency package 906 and the second radio frequency package 908.
  • FIG. 10 illustrates certain components that may be included within an electronic device/wireless device 1002.
  • the electronic device/wireless device 1002 may be an access terminal, a mobile station, a user equipment (UE), etc.
  • the electronic device/wireless device 1002 includes a processor 1003.
  • the processor 1003 may be a general purpose single- or multi-chip microprocessor (e.g., an ARM), a special purpose microprocessor (e.g., a digital signal processor (DSP)), a microcontroller, a programmable gate array, etc.
  • the processor 1003 may be referred to as a central processing unit (CPU).
  • CPU central processing unit
  • the electronic device/wireless device 1002 also includes memory 1005.
  • the memory 1005 may be any electronic component capable of storing electronic information.
  • the memory 1005 may be embodied as random access memory (RAM), read-only memory (ROM), magnetic disk storage media, optical storage media, flash memory devices in RAM, on-board memory included with the processor, erasable programmable read-only memory (EPROM), electrically erasable PROM (EEPROM), registers and so forth, including combinations thereof.
  • Data 1007a and instructions 1009a may be stored in the memory 1005.
  • the instructions 1009a may be executable by the processor 1003 to implement the methods disclosed herein. Executing the instructions 1009a may involve the use of the data 1007a that is stored in the memory 1005.
  • various portions of the instructions 1009b may be loaded onto the processor 1003, and various pieces of data 1007b may be loaded onto the processor 1003.
  • the electronic device/wireless device 1002 may also include a transmitter 1011 and a receiver 1013 to allow transmission and reception of signals to and from the electronic device/wireless device 1002 via an antenna 1017.
  • the transmitter 1011 and receiver 1013 may be collectively referred to as a transceiver 1015.
  • the electronic device/wireless device 1002 may also include (not shown) multiple transmitters, multiple antennas, multiple receivers and/or multiple transceivers.
  • the electronic device/wireless device 1002 may include a digital signal processor (DSP) 1021.
  • the electronic device/wireless device 1002 may also include a communications interface 1023.
  • the communications interface 1023 may allow a user to interact with the electronic device/wireless device 1002.
  • the various components of the electronic device/wireless device 1002 may be coupled together by one or more buses, which may include a power bus, a control signal bus, a status signal bus, a data bus, etc.
  • buses may include a power bus, a control signal bus, a status signal bus, a data bus, etc.
  • the various buses are illustrated in Figure 10 as a bus system 1019.
  • determining encompasses a wide variety of actions and, therefore, “determining” can include calculating, computing, processing, deriving, investigating, looking up (e.g., looking up in a table, a database or another data structure), ascertaining and the like. Also, “determining” can include receiving (e.g., receiving information), accessing (e.g., accessing data in a memory) and the like. Also, “determining” can include resolving, selecting, choosing, establishing and the like.
  • processor should be interpreted broadly to encompass a general purpose processor, a central processing unit (CPU), a microprocessor, a digital signal processor (DSP), a controller, a microcontroller, a state machine and so forth.
  • a “processor” may refer to an application specific integrated circuit (ASIC), a programmable logic device (PLD), a field programmable gate array (FPGA), etc.
  • ASIC application specific integrated circuit
  • PLD programmable logic device
  • FPGA field programmable gate array
  • processor may refer to a combination of processing devices, e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.
  • memory should be interpreted broadly to encompass any electronic component capable of storing electronic information.
  • the term memory may refer to various types of processor-readable media such as random access memory (RAM), read-only memory (ROM), non-volatile random access memory (NVRAM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable PROM (EEPROM), flash memory, magnetic or optical data storage, registers, etc.
  • RAM random access memory
  • ROM read-only memory
  • NVRAM non-volatile random access memory
  • PROM programmable read-only memory
  • EPROM erasable programmable read-only memory
  • EEPROM electrically erasable PROM
  • flash memory magnetic or optical data storage, registers, etc.
  • instructions and “code” should be interpreted broadly to include any type of computer-readable statement(s).
  • the terms “instructions” and “code” may refer to one or more programs, routines, sub-routines, functions, procedures, etc.
  • “Instructions” and “code” may comprise a single computer-readable statement or many computer-readable statements.
  • the functions described herein may be implemented in software or firmware being executed by hardware.
  • the functions may be stored as one or more instructions on a computer-readable medium.
  • computer-readable medium or “computer- program product” refers to any tangible storage medium that can be accessed by a computer or a processor.
  • a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer.
  • Disk and disc includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray® disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers.
  • a computer-readable medium may be tangible and non-transitory.
  • the term "computer-program product” refers to a computing device or processor in combination with code or instructions (e.g., a "program”) that may be executed, processed or computed by the computing device or processor.
  • code may refer to software, instructions, code or data that is/are executable by a computing device or processor.
  • Software or instructions may also be transmitted over a transmission medium.
  • a transmission medium For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio and microwave are included in the definition of transmission medium.
  • DSL digital subscriber line
  • the methods disclosed herein comprise one or more steps or actions for achieving the described method.
  • the method steps and/or actions may be interchanged with one another without departing from the scope of the claims.
  • the order and/or use of specific steps and/or actions may be modified without departing from the scope of the claims.
  • modules and/or other appropriate means for performing the methods and techniques described herein, such as those illustrated by Figure 4 can be downloaded and/or otherwise obtained by a device.
  • a device may be coupled to a server to facilitate the transfer of means for performing the methods described herein.
  • various methods described herein can be provided via a storage means (e.g., random access memory (RAM), readonly memory (ROM), a physical storage medium such as a compact disc (CD) or floppy disk, etc.), such that a device may obtain the various methods upon coupling or providing the storage means to the device.
  • a storage means e.g., random access memory (RAM), readonly memory (ROM), a physical storage medium such as a compact disc (CD) or floppy disk, etc.
  • RAM random access memory
  • ROM readonly memory
  • CD compact disc
  • floppy disk etc.
  • any other suitable technique for providing the methods and techniques described herein to a device can be utilized.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
PCT/US2012/065363 2011-11-15 2012-11-15 Radio frequency package on package circuit Ceased WO2013074846A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IN2599CHN2014 IN2014CN02599A (enExample) 2011-11-15 2012-11-15
JP2014542472A JP6109842B2 (ja) 2011-11-15 2012-11-15 無線周波数パッケージオンパッケージ回路
KR1020147016356A KR101613274B1 (ko) 2011-11-15 2012-11-15 무선 주파수 패키지 온 패키지 회로 및 무선 주파수 패키지 온 패키지 회로를 생성하기 위한 방법, 장치, 컴퓨터 판독가능 매체
CN201280056157.5A CN103930989B (zh) 2011-11-15 2012-11-15 射频层叠封装电路
EP12805818.7A EP2780941A1 (en) 2011-11-15 2012-11-15 Radio frequency package on package circuit

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161560157P 2011-11-15 2011-11-15
US61/560,157 2011-11-15
US13/677,054 2012-11-14
US13/677,054 US9131634B2 (en) 2011-11-15 2012-11-14 Radio frequency package on package circuit

Publications (1)

Publication Number Publication Date
WO2013074846A1 true WO2013074846A1 (en) 2013-05-23

Family

ID=48281100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/065363 Ceased WO2013074846A1 (en) 2011-11-15 2012-11-15 Radio frequency package on package circuit

Country Status (7)

Country Link
US (1) US9131634B2 (enExample)
EP (1) EP2780941A1 (enExample)
JP (1) JP6109842B2 (enExample)
KR (1) KR101613274B1 (enExample)
CN (1) CN103930989B (enExample)
IN (1) IN2014CN02599A (enExample)
WO (1) WO2013074846A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9252147B2 (en) * 2013-08-05 2016-02-02 Qualcomm Incorporated Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip
CN107078125B (zh) 2015-01-21 2020-06-02 株式会社村田制作所 功率放大模块
WO2016189951A1 (ja) * 2015-05-26 2016-12-01 株式会社村田製作所 フィルタ装置
WO2017033564A1 (ja) 2015-08-27 2017-03-02 株式会社村田製作所 高周波モジュール
CN105514094A (zh) * 2016-01-29 2016-04-20 宜确半导体（苏州）有限公司 一种射频天线开关芯片
DE102016110862B4 (de) * 2016-06-14 2022-06-30 Snaptrack, Inc. Modul und Verfahren zur Herstellung einer Vielzahl von Modulen
US10312193B2 (en) * 2016-08-12 2019-06-04 Qualcomm Incorporated Package comprising switches and filters
US10685924B2 (en) * 2017-08-24 2020-06-16 Qualcomm Incorporated Antenna-on-package arrangements
WO2019065668A1 (ja) * 2017-09-29 2019-04-04 株式会社村田製作所 高周波モジュールおよび通信装置
WO2019075450A1 (en) * 2017-10-15 2019-04-18 Skyworks Solutions, Inc. STACK ASSEMBLY WITH ELECTRO-ACOUSTIC DEVICE
CN109087909B (zh) * 2018-08-10 2024-08-02 浙江熔城半导体有限公司 具有金属柱的多腔室封装结构及其制作方法
CN108807350B (zh) * 2018-08-10 2024-08-02 浙江熔城半导体有限公司 放大器芯片电极外设的多腔室封装结构及其制作方法
KR102578395B1 (ko) * 2019-04-25 2023-09-14 엘지전자 주식회사 커넥터를 구비하는 전자 기기
CN111276475B (zh) * 2020-05-07 2020-08-18 杭州臻镭微波技术有限公司 一种三维异构集成综合射频前端微系统
JP2022007366A (ja) * 2020-06-26 2022-01-13 株式会社村田製作所 高周波モジュールおよび通信装置
US11152707B1 (en) * 2020-07-02 2021-10-19 International Business Machines Corporation Fast radio frequency package
CN112117978A (zh) * 2020-10-15 2020-12-22 北京飞宇微电子电路有限责任公司 一种信号处理装置及其预处理模块
CN112117984A (zh) * 2020-10-15 2020-12-22 北京飞宇微电子电路有限责任公司 一种预处理模块
CN112865835A (zh) * 2021-01-05 2021-05-28 上海闻泰信息技术有限公司 一种射频前端模组的封装结构及移动终端
CN115037357B (zh) * 2022-06-08 2023-03-14 西安交通大学 一种瓦片式下变频器、相控阵天线系统及卫星通信系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172271A (ja) * 1983-03-19 1984-09-28 Fujitsu Ltd 半導体装置
EP1326303A2 (en) * 2001-12-27 2003-07-09 Mitsubishi Denki Kabushiki Kaisha Stacked radio-frequency module
US20080111226A1 (en) * 2006-11-15 2008-05-15 White George E Integration using package stacking with multi-layer organic substrates
US20110128713A1 (en) * 2009-11-30 2011-06-02 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150724A (en) 1998-03-02 2000-11-21 Motorola, Inc. Multi-chip semiconductor device and method for making the device by using multiple flip chip interfaces
JP2000223656A (ja) * 1999-02-03 2000-08-11 Rohm Co Ltd 無線通信装置用半導体装置およびこれを用いた無線通信装置
US6856007B2 (en) 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US20060255446A1 (en) 2001-10-26 2006-11-16 Staktek Group, L.P. Stacked modules and method
US7239020B2 (en) 2004-05-06 2007-07-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Multi-mode integrated circuit structure
US7772708B2 (en) 2006-08-31 2010-08-10 Intel Corporation Stacking integrated circuit dies
JP4734282B2 (ja) * 2007-04-23 2011-07-27 株式会社日立製作所 半導体チップおよび半導体装置
US8159208B2 (en) * 2007-12-20 2012-04-17 Anritsu Company Hand-held microwave spectrum analyzer with operation range from 9 KHz to over 20 GHz
US20090321876A1 (en) * 2008-06-30 2009-12-31 Telesphor Kamgaing System with radio frequency integrated circuits
JP4833307B2 (ja) * 2009-02-24 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法
CN102184906B (zh) * 2011-03-31 2013-05-08 锐迪科创微电子（北京）有限公司 带有绝缘体填充的阱结构的封装基板及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172271A (ja) * 1983-03-19 1984-09-28 Fujitsu Ltd 半導体装置
EP1326303A2 (en) * 2001-12-27 2003-07-09 Mitsubishi Denki Kabushiki Kaisha Stacked radio-frequency module
US20080111226A1 (en) * 2006-11-15 2008-05-15 White George E Integration using package stacking with multi-layer organic substrates
US20110128713A1 (en) * 2009-11-30 2011-06-02 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2780941A1 *

Also Published As

Publication number Publication date
US20130122833A1 (en) 2013-05-16
JP6109842B2 (ja) 2017-04-05
CN103930989A (zh) 2014-07-16
CN103930989B (zh) 2017-07-21
KR20140094616A (ko) 2014-07-30
IN2014CN02599A (enExample) 2015-08-07
EP2780941A1 (en) 2014-09-24
JP2014533911A (ja) 2014-12-15
KR101613274B1 (ko) 2016-04-18
US9131634B2 (en) 2015-09-08

Similar Documents

Publication Publication Date Title
KR101613274B1 (ko) 무선 주파수 패키지 온 패키지 회로 및 무선 주파수 패키지 온 패키지 회로를 생성하기 위한 방법, 장치, 컴퓨터 판독가능 매체
US9178491B2 (en) Circuit module including duplexer
CN106797222B (zh) 轮廓调谐电路
CN104105342B (zh) 高频电路组件
US9917615B2 (en) Radio-frequency module
CN103973332B (zh) 模块基板及模块
US10873311B2 (en) Acoustic resonators with reduced loss characteristics and methods of manufacturing same
US9252476B2 (en) Circuit module including a splitter and a mounting substrate
US8963652B2 (en) Duplexer and circuit module including the same
WO2018057351A1 (en) Backside ground plane for integrated circuit
US20120077449A1 (en) Radio frequency power amplifier
JP6721114B2 (ja) 高周波モジュール
US20200077510A1 (en) Devices and methods related to nested filters
US20130314170A1 (en) Switch module
CN112088489A (zh) 电路基板
WO2018123972A1 (ja) 高周波モジュール及び通信装置
KR102417489B1 (ko) 고주파 모듈 및 통신 장치
US8975966B2 (en) Shared bypass capacitor matching network
CN117713865A (zh) 射频前端模组和通信设备
JP2021170702A (ja) 高周波モジュール及び通信装置
US20240421835A1 (en) Radio-frequency module and communication device
US20240259036A1 (en) Radio-frequency module and communication apparatus
US20210249177A1 (en) Shielding for a laminate inductor coil
HK1232683A1 (en) Network with integrated passive device and conductive trace in packaging substrate and related modules and devices

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12805818

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014542472

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2012805818

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20147016356

Country of ref document: KR

Kind code of ref document: A