WO2013051555A1 - 炭化ケイ素単結晶基板および研磨液 - Google Patents
炭化ケイ素単結晶基板および研磨液 Download PDFInfo
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- WO2013051555A1 WO2013051555A1 PCT/JP2012/075504 JP2012075504W WO2013051555A1 WO 2013051555 A1 WO2013051555 A1 WO 2013051555A1 JP 2012075504 W JP2012075504 W JP 2012075504W WO 2013051555 A1 WO2013051555 A1 WO 2013051555A1
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- polishing
- silicon carbide
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- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 132
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 97
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 238000005498 polishing Methods 0.000 title claims description 228
- 239000007788 liquid Substances 0.000 claims description 86
- 239000006061 abrasive grain Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000007800 oxidant agent Substances 0.000 claims description 33
- 150000002500 ions Chemical class 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- 150000003624 transition metals Chemical class 0.000 claims description 8
- 230000007547 defect Effects 0.000 description 30
- 238000000034 method Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 11
- 229910003460 diamond Inorganic materials 0.000 description 10
- 239000010432 diamond Substances 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 239000008119 colloidal silica Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012286 potassium permanganate Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- -1 vanadate ions Chemical class 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000000089 atomic force micrograph Methods 0.000 description 5
- 150000007514 bases Chemical class 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000033116 oxidation-reduction process Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 150000004804 polysaccharides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 244000215068 Acacia senegal Species 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 239000001879 Curdlan Substances 0.000 description 1
- 229920002558 Curdlan Polymers 0.000 description 1
- 229920002148 Gellan gum Polymers 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 229920000161 Locust bean gum Polymers 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 235000003421 Plantago ovata Nutrition 0.000 description 1
- 244000134552 Plantago ovata Species 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 108010020346 Polyglutamic Acid Proteins 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical class [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 239000009223 Psyllium Substances 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 235000004298 Tamarindus indica Nutrition 0.000 description 1
- 240000004584 Tamarindus indica Species 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- 239000000205 acacia gum Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229940105329 carboxymethylcellulose Drugs 0.000 description 1
- 235000010418 carrageenan Nutrition 0.000 description 1
- 239000000679 carrageenan Substances 0.000 description 1
- 229920001525 carrageenan Polymers 0.000 description 1
- 229940113118 carrageenan Drugs 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 235000019316 curdlan Nutrition 0.000 description 1
- 229940078035 curdlan Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000010492 gellan gum Nutrition 0.000 description 1
- 239000000216 gellan gum Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 235000010420 locust bean gum Nutrition 0.000 description 1
- 239000000711 locust bean gum Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004690 nonahydrates Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000001139 pH measurement Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 229960000292 pectin Drugs 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 1
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 229940070687 psyllium Drugs 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- CGFYHILWFSGVJS-UHFFFAOYSA-N silicic acid;trioxotungsten Chemical compound O[Si](O)(O)O.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 CGFYHILWFSGVJS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 235000010493 xanthan gum Nutrition 0.000 description 1
- 239000000230 xanthan gum Substances 0.000 description 1
- 229940082509 xanthan gum Drugs 0.000 description 1
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Definitions
- the present invention relates to a silicon carbide single crystal substrate and a polishing liquid, and more specifically, a silicon carbide single crystal substrate suitable for forming a high-quality semiconductor layer by epitaxial growth, and polishing for obtaining such a substrate. Regarding liquids.
- Silicon carbide (SiC) semiconductors have a higher breakdown electric field, electron saturation drift velocity, and thermal conductivity than silicon semiconductors, so silicon carbide semiconductors can be operated at higher temperatures and higher temperatures than conventional silicon devices.
- Research and development to realize power devices has been conducted.
- the development of a highly efficient switching element used as a power source for driving a motor of an electric motorcycle, an electric vehicle, a hybrid car or the like has attracted attention.
- a silicon carbide single crystal substrate having a smooth surface for forming a high quality silicon carbide semiconductor layer by epitaxial growth is required.
- Such a light-emitting element is manufactured using a gallium nitride (GaN) semiconductor, and a silicon carbide single crystal substrate is used as a substrate for forming a high-quality gallium nitride semiconductor layer.
- GaN gallium nitride
- the silicon carbide single crystal substrate used for such applications is required to have high processing accuracy in terms of substrate flatness, substrate surface smoothness, etc., and also has high cleaning properties for residues such as abrasive grains derived from abrasives. Required.
- the silicon carbide single crystal has extremely high hardness and excellent corrosion resistance, the processability when producing the substrate is poor, and a silicon carbide single crystal substrate with high smoothness can be obtained while maintaining a high polishing rate. Is difficult.
- silicon carbide single crystal is excellent in corrosion resistance, it is possible to remove abrasive grains by lift-off using a chemical solution such as hydrofluoric acid, which is used for cleaning silicon substrates, even when removing the abrasive grains. It is difficult to apply this method. Therefore, it is difficult to obtain a substrate surface with a high degree of cleaning.
- a smooth surface of a semiconductor single crystal substrate is formed by polishing.
- the surface is mechanically polished by using abrasive grains such as diamond harder than silicon carbide as a polishing material to form a flat surface, but the silicon carbide single crystal substrate polished with diamond abrasive grains A minute scratch corresponding to the grain size of the diamond abrasive grains is introduced on the surface of the. Further, since a work-affected layer having mechanical strain is generated on the surface, the smoothness of the substrate surface is not sufficient as it is.
- CMP chemical mechanical polishing
- Formation of a silicon carbide semiconductor layer by epitaxial growth on a silicon carbide single crystal substrate is performed by using a thermal CVD method to form silicon atoms and carbon atoms on an extremely smooth surface at an atomic level where an atomic step / terrace structure is generated by the CMP. It is done by depositing.
- the front end line portion of the atomic step becomes the starting point of epitaxial growth, in order to obtain a high-quality silicon carbide semiconductor layer having no crystal defects, the surface structure required for the silicon carbide single crystal substrate is the crystal structure. Not only the original atomic step / terrace structure is generated, but also high processing accuracy is required for the shape of the generated atomic step.
- the “atomic step / terrace structure” means a plurality of flat “terrace” arranged in parallel to each other through a step along the main surface of the single crystal substrate, and each terrace.
- a linear portion where the upper end portion of the atomic step is in contact with the terrace is referred to as “front end line portion of the atomic step”.
- the “terrace”, “atomic step”, and “front end line portion of the atomic step” will be further described later.
- Patent Document 1 Although the generation of the atomic step / terrace structure derived from the crystal structure is considered, no consideration is given to the influence of the end shape of the atomic step and the crystal defect on the epitaxial growth of the crystal. . Further, merely suppressing crystal defects in the silicon carbide semiconductor layer by etching is insufficient to obtain a high-quality semiconductor layer. Furthermore, from a cost viewpoint, it is required to realize a higher polishing rate.
- silica abrasive grains As abrasives for smoothly polishing the surface of a silicon carbide single crystal substrate at a high polishing rate, silica abrasive grains, an oxidizing agent (oxygen donor) such as hydrogen peroxide, and vanadate.
- oxygen donor oxygen donor
- vanadate oxygen donor
- the polishing composition of Patent Document 2 has a problem that the polishing rate for the silicon carbide single crystal substrate is low and the time required for polishing becomes very long.
- an atomic step / terrace structure is generated on the polished surface, the front end line portion of the atomic step becomes chipped or chipped due to mechanical damage during polishing, and crystal defects occur. There was a problem. Further, there is a problem that silica abrasive grains that cannot be removed by cleaning remain on the substrate, and this abrasive grain residue causes crystal defects in the semiconductor layer epitaxially grown on the polished substrate surface.
- a silicon carbide single crystal substrate suitable for epitaxially growing a high-quality semiconductor layer free from crystal defects, and such a silicon carbide single crystal substrate are provided.
- An object is to provide a polishing liquid to be obtained by CMP.
- the silicon carbide single crystal substrate of the present invention includes a main surface having an atomic step / terrace structure including atomic steps and terraces derived from a crystal structure, and in the atomic step / terrace structure, a front end line portion of the atomic steps is provided.
- the average line roughness is a ratio of 20% or less with respect to the height of the atomic step.
- the main surface is preferably a surface on which a crystal is epitaxially grown to form a silicon carbide semiconductor layer or a gallium nitride semiconductor layer.
- the polishing liquid of the present invention has an atomic step / terrace structure comprising an atomic step and a terrace derived from a crystal structure on a principal surface in a predetermined plane direction of a silicon carbide single crystal substrate, and the atomic step / terrace structure
- a polishing liquid for chemically and mechanically polishing so that the average line roughness of the front end line portion of the atomic step is 20% or less with respect to the height of the atomic step, It contains an oxidizing agent containing a transition metal having a redox potential of 0.5 V or higher and water, and does not contain abrasive grains.
- the oxidizing agent is preferably permanganate ions. Moreover, it is preferable that content of the said permanganate ion is 0.05 to 5 mass% with respect to the abrasive
- the silicon carbide single crystal substrate of the present invention has an atomic step / terrace structure derived from a crystal structure, and the average linear roughness (R) of the front end line portion of the atomic step with respect to the height (h) of the atomic step.
- the ratio is 20% or less, and the crystal defects and the like at the front end line portion that is the starting point of epitaxial crystal growth by the step flow method are suppressed.By epitaxially growing the main surface of this silicon carbide single crystal substrate, A high quality silicon carbide semiconductor layer or gallium nitride semiconductor layer can be obtained.
- the polishing liquid of the present invention contains an oxidizing agent containing a transition metal having an oxidation-reduction potential of 0.5 V or more and water, and does not contain abrasive grains. Therefore, a predetermined plane direction of a silicon carbide single crystal substrate is obtained using this polishing liquid.
- an oxidizing agent containing a transition metal having an oxidation-reduction potential of 0.5 V or more and water and does not contain abrasive grains. Therefore, a predetermined plane direction of a silicon carbide single crystal substrate is obtained using this polishing liquid.
- By chemically and mechanically polishing the main surface of the substrate it has an atomic step / terrace structure derived from the crystal structure, and there is no crystal defect due to mechanical damage during polishing at the front end line portion of the atomic step. High quality surface can be obtained. Further, according to this polishing liquid, no abrasive residue is generated on the cleaned silicon carbide single crystal substrate.
- FIG. 1A and 1B schematically show an atomic step / terrace structure generated on a main surface of a silicon carbide single crystal substrate according to an embodiment of the present invention
- FIG. 1A is a plan view.
- FIG. 2 is an enlarged perspective view.
- FIG. 2 is a diagram showing a crystal structure of a 4H—SiC single crystal.
- FIG. 3 is a diagram illustrating an example of a polishing apparatus that can be used for polishing using the polishing liquid according to the embodiment of the present invention.
- FIG. 4 schematically shows an atomic step / terrace structure generated on the main surface of a silicon carbide single crystal substrate polished using a conventional abrasive liquid, (a) is a plan view, b) is an enlarged perspective view.
- FIG. 5 is a diagram schematically showing epitaxial growth by a step flow method on a silicon carbide single crystal substrate.
- FIG. 6 is a diagram showing measurement positions of the line roughness of the front end line portion of the atomic step / terrace structure generated after CMP polishing in Examples 1 to 6.
- the silicon carbide single crystal substrate of the embodiment of the present invention has a flat terrace 1 region derived from the crystal structure and an atomic step 2 which is a step region.
- an atomic step 2 which is a step region.
- the front end line portion 2a in which the upper end portion of the atomic step 2 is in contact with the terrace 1 has a straight shape, and is not curved, chipped or chipped.
- the width of the terrace 1 is substantially the same on all the terraces, and each part is substantially uniform on each terrace.
- the C-axis shown in FIG. 1B is a direction perpendicular to the paper surface in FIG.
- the ratio of the average line roughness (R) of the front end line portion 2a of the atomic step 2 to the height (h) of the atomic step 2 is 20% or less. Yes. That is, (R / h) ⁇ 100 ⁇ 20. R / h can be regarded as an index representing the degree of mechanical damage to the front end line portion 2a in the atomic step / terrace structure.
- the main surface having the atomic step / terrace structure is a main surface in a predetermined plane direction and is a main surface having a predetermined off angle with respect to the C axis.
- the average line roughness (R) of the front end line portion 2a is the center line arithmetic average roughness (Ra) of the cross-sectional roughness curve of the front end line portion 2a, and is measured by, for example, the following method. Can do. That is, a predetermined range (for example, a range of 2 ⁇ m wide ⁇ 1 ⁇ m long) of the main surface of the silicon carbide single crystal substrate is observed with an AFM (atomic force microscope), and the obtained AFM image shows a plurality of ranges within the above range. The arithmetic average surface roughness (Ra) is measured for each of the front end line portions 2a, and R is obtained as the average value.
- the height (h) of the atomic step is about 0.25 nm for the silicon carbide single crystal substrate.
- a 4H—SiC substrate has the crystal structure shown in FIG. 2, and 1 ⁇ 4 of C0 (1.008 nm), which is the crystal lattice spacing (lattice constant) in the C-axis direction, is the height (h) of the atomic step. It becomes. That is, in the 4H—SiC substrate, the height (h) of the atomic step is a value (about 0.25 nm) calculated by 1.008 nm / 4.
- the height (h) of the atomic step in the 6H—SiC substrate is about 0.25 nm as in the 4H—SiC substrate.
- the lattice constant C0 in the C-axis direction is 1.542 nm, and 1/6 of this value is the height (h) of the atomic step, so the height (h) of the atomic step is It becomes about 0.25 nm.
- the 4H—SiC substrate and the 6H—SiC substrate will be described in the section of the object to be polished.
- the principal surface in a predetermined plane direction has an atomic step / terrace structure derived from the crystal structure, and has high smoothness, and average line roughness of the front end line portion 2a. Since the ratio of (R) to the height (h) of atomic step 2 is 20% or less, the crystal defects and the like of front end line portion 2a that are the starting points of epitaxial crystal growth by the step flow method are suppressed. Yes. Therefore, a high quality silicon carbide semiconductor layer or gallium nitride semiconductor layer can be obtained by epitaxially growing a crystal on the main surface of the silicon carbide single crystal substrate.
- the step flow method will be described in detail in the section of epitaxial growth described later.
- the main surface of the silicon carbide single crystal substrate which is excellent in the shape of the front end line portion 2a and in which the crystal defects in the portion are suppressed, has a high oxidation power including a transition metal having a redox potential of 0.5 V or more. It can be obtained by performing CMP using the polishing liquid of the present invention containing an agent and substantially free of abrasive grains.
- a polishing liquid according to an embodiment of the present invention is a polishing liquid for chemically and mechanically polishing a principal surface in a predetermined plane direction of a silicon carbide single crystal substrate.
- a transition metal having an oxidation-reduction potential of 0.5 V or more is used. It contains an oxidizing agent and water, and does not contain abrasive grains.
- the ratio of the average line roughness (R) of the front end line portion to the height (h) of the atomic step is 20% or less (( R / h) ⁇ 100 ⁇ 20) can be obtained as a polished main surface (hereinafter sometimes referred to as a polished main surface).
- a substrate having high hardness and high chemical stability such as a silicon carbide single crystal substrate can be polished at a sufficiently high polishing rate.
- this polishing liquid since no abrasive grains remain on the cleaned silicon carbide single crystal substrate, it is possible to prevent the occurrence of crystal defects due to the abrasive grain residues.
- the oxidizing agent contained in the polishing liquid of the embodiment of the present invention permanganate ions are preferable, and the content thereof is preferably 0.05% by mass or more and 5% by mass or less.
- the pH of the polishing liquid is preferably 11 or less, and more preferably 5 or less.
- a pH adjuster can be added to the polishing liquid. When the pH of the polishing liquid is 11 or less, the oxidizing agent acts effectively, so the polishing rate is high and the polishing characteristics are good. Below, it describes about each component and pH of the polishing liquid of this invention.
- the oxidizing agent containing a transition metal having a redox potential of 0.5 V or more which is contained in the polishing liquid according to the embodiment of the present invention, forms an oxide layer on the surface to be polished of a silicon carbide single crystal substrate that is an object to be polished. Is. By removing this oxide layer from the surface to be polished by mechanical force, polishing of the object to be polished is promoted. That is, a silicon carbide single crystal that is a non-oxide is a difficult-to-polish material, but an oxide layer can be formed on the surface by an oxidizing agent containing a transition metal having a redox potential of 0.5 V or higher in the polishing liquid.
- the oxidized layer has a lower hardness than the object to be polished and is easily polished, it can be removed by contact with a polishing pad that does not contain abrasive grains. Therefore, a sufficiently high polishing rate can be obtained.
- a redox potential measurement method a commercially available redox potential meter can be used.
- the reference electrode include a silver / silver chloride electrode using a saturated potassium chloride aqueous solution as an internal solution, and a metal electrode such as platinum can be used as the working electrode.
- the temperature and pH of the aqueous solution at the time of measurement it can be measured at room temperature around 25 ° C., and a pH-adjusted sample can be prepared and measured.
- the “surface to be polished” is a surface to be polished of an object to be polished, such as a surface.
- Examples of the oxidizing agent containing a transition metal having a redox potential of 0.5 V or more contained in the polishing liquid include permanganate ions, vanadate ions, dichromate ions, cerium ammonium nitrate, and iron (III) nitrate. Examples thereof include nonahydrate, silver nitrate, phosphotungstic acid, silicotungstic acid, phosphomolybdic acid, phosphotungstomolybdic acid, and phosphovanadomolybdic acid.
- Permanganate ions are particularly preferred.
- permanganate such as potassium permanganate and sodium permanganate is preferable.
- permanganate ions are particularly preferable as an oxidizing agent in polishing a silicon carbide single crystal substrate.
- Permanganate ions have a strong oxidizing power for oxidizing silicon carbide single crystals. If the oxidizing power of the oxidizing agent is too weak, the reaction with the polished surface of the silicon carbide single crystal substrate becomes insufficient, and as a result, a sufficiently smooth surface cannot be obtained.
- An oxidation-reduction potential is used as an index of the oxidizing power with which an oxidizing agent oxidizes a substance.
- the redox potential of permanganate ions is 1.70 V, and potassium perchlorate (KClO 4 ) (redox potential 1.20 V) or sodium hypochlorite (NaClO) (redox potential) generally used as an oxidizing agent. Compared with 1.63 V), the redox potential is high.
- K Permanganate ions have a high reaction rate. Since permanganate ions have a higher rate of oxidation reaction than hydrogen peroxide (oxidation-reduction potential: 1.76 V), which is known as an oxidizing agent with strong oxidizing power, the oxidizing power is exerted quickly. it can.
- Permanganate ions are safe and low in toxicity to the human body.
- the content (concentration) of permanganate ions in the polishing liquid is preferably 0.05% by mass or more and 5% by mass or less. If it is less than 0.05% by mass, the effect as an oxidizing agent cannot be expected, and it may take a very long time to form a smooth surface by polishing, or scratches may occur on the surface to be polished.
- the content of permanganate ions contained in the polishing liquid is more preferably 0.1% by mass or more and 4% by mass or less, and particularly preferably 0.2% by mass or more and 3.5% by mass or less.
- the polishing liquid according to the embodiment of the present invention includes polishing abrasive grains such as silicon oxide (silica) particles, cerium oxide (ceria) particles, aluminum oxide (alumina) particles, zirconium oxide (zirconia) particles, and titanium oxide (titania) particles. , which is substantially not contained. Since the polishing liquid does not contain abrasive grains, and no residue of abrasive grains is produced after cleaning as described above, it is possible to prevent the occurrence of crystal defects due to abrasive grain residues. Further, the polishing liquid can be used without paying attention to the dispersibility of the abrasive grains, and there is an advantage that mechanical damage to the surface to be polished is suppressed because the abrasive grains are not substantially aggregated.
- abrasive grains such as silicon oxide (silica) particles, cerium oxide (ceria) particles, aluminum oxide (alumina) particles, zirconium oxide (zirconia) particles, and titanium oxide (titania) particles.
- the pH of the polishing liquid according to the embodiment of the present invention is preferably 11 or less, more preferably 5 or less, and particularly preferably 3 or less from the viewpoint of polishing characteristics.
- the pH is more than 11, not only a sufficient polishing rate cannot be obtained, but also the smoothness of the surface to be polished may be deteriorated.
- the pH of the polishing liquid can be adjusted by adding or blending an acid or basic compound that is a pH adjusting agent.
- acids include inorganic acids such as nitric acid, sulfuric acid, phosphoric acid and hydrochloric acid, saturated carboxylic acids such as formic acid, acetic acid, propionic acid and butyric acid, hydroxy acids such as lactic acid, malic acid and citric acid, phthalic acid and salicylic acid.
- Organic acids such as aromatic carboxylic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, fumaric acid, maleic acid and other dicarboxylic acids, amino acids, and heterocyclic carboxylic acids can be used.
- nitric acid and phosphoric acid is preferred, and the use of nitric acid is particularly preferred.
- basic compound quaternary ammonium compounds such as ammonia, lithium hydroxide, potassium hydroxide, sodium hydroxide and tetramethylammonium, and organic amines such as monoethanolamine, ethylethanolamine, diethanolamine and propylenediamine can be used.
- potassium hydroxide and sodium hydroxide is preferable, and potassium hydroxide is particularly preferable.
- the content ratio (concentration) of these acids or basic compounds is an amount that adjusts the pH of the polishing liquid to a predetermined range (pH 11 or less, more preferably 5 or less, more preferably 3 or less).
- water In the polishing liquid of the embodiment of the present invention, water is contained as a dispersion medium. Water is a medium for dispersing / dissolving the oxidant and optional components added as necessary. Although there is no restriction
- the polishing liquid according to the embodiment of the present invention is prepared and used so that each component described above is contained in the predetermined ratio and is uniformly dissolved.
- a stirring and mixing method using a stirring blade usually used in the production of a polishing liquid can be employed.
- the polishing liquid does not necessarily have to be supplied to the polishing site as a mixture of all constituent polishing components.
- the polishing components may be mixed to form a polishing liquid composition.
- a lubricant In the polishing liquid of the embodiment of the present invention, a lubricant, a chelating agent, a reducing agent, a viscosity imparting agent, a viscosity modifier, a rust preventive agent, and the like are appropriately contained as necessary unless contrary to the gist of the present invention. Can be made. However, when these additives have the function of an oxidizing agent, an acid, or a basic compound, they are handled as an oxidizing agent, an acid, or a basic compound.
- anionic, cationic, nonionic, amphoteric surfactants polysaccharides, water-soluble polymers and the like can be used.
- the surfactant there are an aliphatic hydrocarbon group and an aromatic hydrocarbon group as a hydrophobic group, and a linking group such as an ester, ether, amide, etc., an acyl group, an alkoxyl group, etc. is included in the hydrophobic group.
- One having one or more introduced groups and one having a carboxylic acid, a sulfonic acid, a sulfate ester, a phosphoric acid, a phosphate ester or an amino acid can be used as the hydrophilic group.
- polysaccharides examples include alginic acid, pectin, carboxymethylcellulose, curdlan, pullulan, xanthan gum, carrageenan, gellan gum, locust bean gum, gum arabic, tamarind, and psyllium.
- water-soluble polymer polyacrylic acid, polyvinyl alcohol, polyvinyl pyrrolidone, polymethacrylic acid, polyacrylamide, polyaspartic acid, polyglutamic acid, polyethyleneimine, polyallylamine, polystyrene sulfonic acid and the like can be used.
- polishing liquid In order to perform polishing using the polishing liquid according to the embodiment of the present invention, a known polishing pad that does not include abrasive grains is used, and the above-described polishing liquid is supplied to the polishing pad while carbonization that is an object to be polished.
- the surface to be polished of the silicon single crystal substrate is brought into contact with the polishing pad, and polishing is performed by relative movement between the two. The polishing object will be described later.
- FIG. 3 shows an example of a usable polishing apparatus.
- a polishing surface plate 11 is provided in a state of being rotatably supported around its vertical axis C 1, and this polishing surface plate 11 is driven by a surface plate driving motor 12. , And is driven to rotate in the direction indicated by the arrow in the figure.
- a known polishing pad 13 that does not contain abrasive grains is attached to the upper surface of the polishing surface plate 11.
- a substrate holding member (carrier) 15 for holding the polishing object 14 on the lower surface by suction or using a holding frame or the like is provided around the axis C2. And is supported so as to be movable in the direction of the axis C2.
- the substrate holding member 15 is configured to be rotated in a direction indicated by an arrow by a carrier drive motor (not shown) or by a rotational moment received from the polishing surface plate 11.
- a carrier drive motor not shown
- a silicon carbide single crystal substrate that is the polishing object 14 is held. The polishing object 14 is pressed against the polishing pad 13 with a predetermined load.
- a dropping nozzle 16 or a spray nozzle (not shown) is provided in the vicinity of the substrate holding member 15, and the above-described polishing liquid 17 sent from a tank (not shown) is supplied onto the polishing surface plate 11. It has become so.
- the substrate holding member 15 may perform a linear motion as well as a rotational motion. Also, the polishing surface plate 11 and the polishing pad 13 do not have to perform rotational movement, and may move in one direction, for example, by a belt type.
- the polishing pad 13 a known pad made of a nonwoven resin, a porous resin such as foamed polyurethane or the like and containing no abrasive grains can be used. Further, in order to promote the supply of the polishing liquid 17 to the polishing pad 13 or to collect a certain amount of the polishing liquid 17 on the polishing pad 13, the surface of the polishing pad 13 has a lattice shape, a concentric circle shape, a spiral shape, or the like. Groove processing may be performed. Further, if necessary, the pad conditioner may be brought into contact with the surface of the polishing pad 13 to perform polishing while conditioning the surface of the polishing pad 13.
- the polishing conditions by the polishing apparatus 10 are not particularly limited, but it is possible to increase the polishing pressure and improve the polishing speed by applying a load to the substrate holding member 15 and pressing it against the polishing pad 13.
- the polishing pressure is preferably about 5 to 80 kPa, and more preferably about 10 to 50 kPa from the viewpoint of uniformity of polishing rate in the surface to be polished, flatness, and prevention of polishing defects such as scratches.
- the number of rotations of the polishing surface plate 11 and the substrate holding member 15 is preferably about 50 to 500 rpm, but is not limited thereto.
- the supply amount of the polishing liquid 17 is appropriately adjusted and selected depending on the composition of the polishing liquid, the polishing conditions described above, and the like.
- the polishing object to be polished using the polishing liquid according to the embodiment of the present invention is a silicon carbide single crystal substrate or a gallium nitride single crystal substrate that is a non-oxide single crystal, and more preferably a silicon carbide single crystal substrate. . More specifically, a silicon carbide single crystal substrate having a crystal structure of 3C—SiC, 4H—SiC, or 6H—SiC can be given. The 3C-, 4H-, and 6H- represent silicon carbide crystal polymorphs determined by the stacking order of Si-C pairs.
- CMP polishing liquid of the embodiment of the present invention
- a conventional polishing slurry containing hydrogen peroxide as an oxidizing agent and colloidal silica abrasive grains is used.
- a polished main surface having an atomic step / terrace structure in which flat terrace 1 regions and step regions which are step regions are alternately derived, which are derived from the crystal structure, can be obtained.
- the C-axis shown in FIG. 4B is a direction perpendicular to the paper surface in FIG.
- the front end line portion 2a of the atomic step 2 has a chipped shape or a chipped shape due to mechanical damage during polishing, and crystal defects are generated.
- excessive polishing of the front end line portion 2a by abrasive grains having a strong mechanical action can be considered.
- the polishing liquid according to the embodiment of the present invention substantially does not contain abrasive grains, the mechanically added to the front end line portion 2a of the atomic step in the atomic step / terrace structure generated on the polished main surface. Damage has been significantly reduced. Accordingly, as shown in FIGS. 1A and 1B, the front end line portion 2a free from chipping, chipping, and crystal defects can be formed, and the smoothness is high and the front end line portion 2a is excellent. Machining accuracy at the atomic level while maintaining a precise shape.
- the polishing liquid according to the embodiment when used, a machine using a polishing pad having a hardness lower than that of the abrasive grains even though there is no mechanical action due to the abrasive grains due to the action of the oxidant having strong oxidizing power.
- the work-affected layer due to diamond polishing can be quickly removed at a high polishing rate only by the effective action. And the processing precision with the high atomic level which suppressed the damage to the to-be-polished surface of a silicon carbide single crystal substrate is possible.
- silicon atoms and carbon atoms are formed on the polished main surface on which the atomic step / terrace structure of the silicon carbide single crystal substrate is formed by a thermal CVD method. And crystal growth.
- Each atom attached to the terrace 1 of the atomic step / terrace structure reaches the front end line portion 2a and is bonded to an atom having an unbonded hand in the front end line portion 2a, and the surface of the terrace 1 is laterally (
- a film is formed by growing a crystal in a direction orthogonal to the front end line portion 2a (indicated by an arrow in FIG. 5). That is, the front end line portion 2a of the atomic step 2 functions as a starting point for crystal growth in epitaxial growth.
- the crystal quality of a semiconductor layer formed on a silicon carbide single crystal substrate is strongly influenced by crystal defects and surface conditions of the substrate.
- the crystal defect of the silicon carbide single crystal substrate include a micropipe defect, a screw dislocation defect, and an edge dislocation defect.
- the surface state include adhesion of foreign matter such as scratches due to polishing and abrasive grains derived from the abrasive to the surface of the terrace 1, surface oxides of the terrace 1, and the like.
- the front end line portion 2a of the atomic step 2 which is the starting point of the epitaxial growth, the propagation of defects existing in this portion can be considered. Therefore, in order to form a higher quality semiconductor layer, an atomic step terrace structure is used. It is necessary to have an atomic level processing accuracy that takes into consideration the shape and crystal defects of the front end line portion 2a of the atomic step 2 instead of the polishing processing considering only the generation of.
- the terrace 1 since the polished main surface of the silicon carbide single crystal substrate obtained by using the above-described conventional polishing slurry is smoothed by generating an atomic step / terrace structure, the terrace 1 Although crystal defects in the semiconductor layer due to surface scratches and the like can be suppressed, the front end line portion 2a, which is the starting point of crystal growth, has a shape in which crystal defects are unavoidable due to chipping and chipping. A high-quality silicon carbide semiconductor layer or gallium nitride semiconductor layer cannot be formed by epitaxial growth.
- the CMP processing using the polishing liquid according to the embodiment of the present invention has an atomic step / terrace structure, and in this atomic step / terrace structure, a machine for the front end line portion 2a of the atomic step 2 is provided. Since a highly smooth main surface with suppressed damage can be obtained, crystal growth of a higher quality semiconductor layer becomes possible.
- the polishing liquid of the embodiment of the present invention does not contain abrasive grains, the abrasive grains do not remain on the surface of the silicon carbide single crystal substrate even after cleaning, and the semiconductor originates from abrasive residue derived from the abrasive. Crystal defects in the layer can be prevented.
- Examples 1 to 4 are examples of the present invention, and examples 5 and 6 are comparative examples.
- polishing liquid and abrasive liquid (1-1)
- Each polishing liquid of Examples 1 to 4 was prepared as follows. First, pure water was added to potassium permanganate, which is an oxidizing agent shown in Table 1, and the mixture was stirred for 10 minutes using a stirring blade. Subsequently, nitric acid in Examples 1 to 3 and potassium hydroxide in Example 4 were gradually added to this liquid while stirring to adjust to the predetermined pH shown in Table 1 to obtain a polishing liquid. It was.
- Table 1 shows the content (concentration: mass%) of potassium permanganate, which is the oxidizing agent used in each example, with respect to the entire polishing liquid.
- the oxidizing agent concentration in Table 1 is not the concentration of permanganate ions but the concentration of potassium permanganate.
- Example 5 The abrasive liquids of Examples 5 and 6 were prepared as shown below.
- pure water was added to a colloidal silica dispersion having a primary particle size of 40 nm and a secondary particle size of about 70 nm and a silica solid content of about 40% by mass, and the mixture was stirred for 10 minutes using a stirring blade.
- ammonium vanadate as a metal salt was added to this solution while stirring, and finally hydrogen peroxide solution was added and stirred for 30 minutes to obtain an abrasive solution adjusted to each component concentration shown in Table 1. .
- Example 6 pure water was added to a colloidal silica dispersion having a primary particle size of 80 nm and a secondary particle size of about 110 nm and a silica solid content of about 40% by mass, and the mixture was stirred for 10 minutes. Next, potassium permanganate as an oxidizing agent was added to this solution while stirring, and then nitric acid was gradually added to adjust the pH shown in Table 1 to obtain an abrasive solution. Table 1 shows the content ratio (concentration: mass%) of each component used in Examples 5 and 6 with respect to the entire abrasive.
- the oxidizing agent concentration in Table 1 is not the concentration of permanganate ions but the concentration of potassium permanganate.
- the primary particle size of the silica particles blended in Examples 5 and 6 is obtained by conversion from the specific surface area obtained by the BET method, and the secondary particle size is determined by a dynamic light scattering particle size distribution measuring device. Measured using a Microtrack UPA (manufactured by Nikkiso Co., Ltd.).
- polishing characteristics of the polishing liquids obtained in Examples 1 to 4 and the polishing liquids obtained in Examples 5 and 6 were evaluated by the following method.
- polishing machine a small single-side polishing machine manufactured by MAT was used.
- polishing pad SUBA800-XY-groove (manufactured by Nitta Haas) was used, and the polishing pad was conditioned using a diamond disk and a brush before polishing. Polishing was performed for 30 minutes with a polishing liquid or abrasive liquid supply rate of 25 cm 3 / min, a polishing platen rotation speed of 68 rpm, a substrate holder rotation speed of 68 rpm, and a polishing pressure of 5 psi (34.5 kPa). .
- (3-2) To-be-polished material As a to-be-polished object, a 4H—SiC substrate having a diameter of 3 inches that had been pre-polished using diamond abrasive grains was prepared. Then, an SiC single crystal substrate (On-axis substrate) having an off angle within 0 ° + 0.25 ° with respect to the C axis of the main surface (0001) was used, and the Si surface side was polished and evaluated.
- polishing rate was evaluated by the amount of change in thickness (nm / hr) per unit time of the SiC single crystal substrate. Specifically, the mass of an unpolished substrate with a known thickness and the substrate mass after polishing each time were measured, and the mass change was determined from the difference. And the change per time of the thickness of the board
- the polishing liquids of Examples 1 to 4 were used. As compared with, the polishing rate was remarkably low.
- the average line roughness of the front end line portion of the atomic step with respect to the theoretical value of the atomic step height (h) is 24%, which is larger than Examples 1 to 4 and the surface roughness is deteriorated. Due to mechanical damage due to polishing, chipping or scooping occurs at the front end line portion of the atomic step. I found out.
- the abrasive grain residue considered to be colloidal silica was observed on the polished main surface.
- polishing was performed as compared with the case where the polishing liquids of Examples 1 to 4 were used. The speed has dropped significantly. Further, although the generation of the atomic step / terrace structure was confirmed from the AFM image of the main surface after polishing, the average line roughness of the front end line portion of the atomic step with respect to the theoretical value of the height (h) of the atomic step ( The ratio of R) is 28%, which is larger than Examples 1 to 4 and the surface roughness is deteriorated. Due to mechanical damage due to polishing, chipping or scooping occurs at the front end line portion of the atomic step. I found out. Moreover, the abrasive grain residue considered to be colloidal silica was observed on the polished main surface.
- the polishing liquid of the present invention it is possible to polish a silicon carbide single crystal substrate having high hardness and high chemical stability at a high polishing rate, excellent in flatness and smoothness without scratches, and an atomic step terrace structure is generated.
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Abstract
Description
本発明の実施形態の炭化ケイ素単結晶基板は、図1(a)および図1(b)に模式的に示すように、結晶構造に由来する平坦なテラス1領域と段差領域である原子ステップ2とが、交互に連続する原子ステップ・テラス構造を持つ、平滑性の高い主面を有する。この原子ステップ・テラス構造において、原子ステップ2の上端部がテラス1と接するフロント端線部2aは、直線状を呈し、湾曲や欠け、えぐれがない。また、テラス1の幅は、全テラスで略同一であり、かつ各テラスで各部略均一となっている。なお、図1(b)に示すC軸は、図1(a)において紙面に垂直な方向である。
例えば、4H-SiC基板は、図2に示す結晶構造を有し、C軸方向の結晶格子間隔(格子定数)であるC0(1.008nm)の1/4が原子ステップの高さ(h)となる。すなわち、4H-SiC基板では、原子ステップの高さ(h)は1.008nm/4により算出される値(約0.25nm)になる。
6H-SiC基板における原子ステップの高さ(h)も、4H-SiC基板と同様に約0.25nmになる。すなわち、6H-SiC基板において、C軸方向の格子定数C0は1.542nmであり、この値の1/6が原子ステップの高さ(h)であるので、原子ステップの高さ(h)は約0.25nmになる。
なお、前記4H-SiC基板、6H-SiC基板については、研磨対象物の項で説明する。
本発明の実施形態の研磨液は、炭化ケイ素単結晶基板の所定の面方向の主面を、化学的機械的に研磨するための研磨液であり、酸化還元電位0.5V以上の遷移金属を含む酸化剤と水とを含み、砥粒を含有しないことを特徴とする。
この研磨液を使用して炭化ケイ素単結晶基板の前記主面のCMPを行うことで、研磨の際の機械的ダメージによる、表面へのスクラッチや原子ステップのフロント端線部の結晶欠陥を抑制できる。そして、前記したように、結晶構造由来の原子ステップ・テラス構造を有し、かつフロント端線部の平均線粗さ(R)の原子ステップの高さ(h)に対する割合が20%以下((R/h)×100≦20)である研磨された主面(以下、研磨済み主面と示すことがある。)を得ることができる。
以下に、本発明の研磨液の各成分、およびpHについて記載する。
本発明の実施形態の研磨液に含有される、酸化還元電位が0.5V以上の遷移金属を含む酸化剤は、研磨対象物である炭化ケイ素単結晶基板の被研磨面に酸化層を形成するものである。この酸化層を機械的な力で被研磨面から除去することにより、研磨対象物の研磨が促進される。すなわち、非酸化物である炭化ケイ素単結晶は、難研磨材料であるが、研磨液中の酸化還元電位が0.5V以上の遷移金属を含む酸化剤により、表面に酸化層を形成でき、形成された酸化層は、研磨対象物に比べて硬度が低く研磨されやすいので、砥粒を内包しない研磨パッドとの接触によっても除去できる。したがって、十分に高い研磨速度を得ることができる。酸化還元電位測定法としては、一般的に市販されている酸化還元電位計を使用できる。参照電極としては、飽和塩化カリウム水溶液を内部液に用いた銀/塩化銀電極が挙げられ、作用電極としては、白金等の金属電極が使用できる。測定時の水溶液は温度及びpHについては、25度付近の室温で行い、pHは適宜調整した試料を準備して測定できる。
なお、本発明において、「被研磨面」とは研磨対象物の研磨される面であり、例えば表面を意味する。
(1)過マンガン酸イオンは、炭化ケイ素単結晶を酸化する酸化力が強い。
酸化剤の酸化力が弱すぎると、炭化ケイ素単結晶基板の被研磨面との反応が不十分となり、その結果十分に平滑な表面を得ることができない。酸化剤が物質を酸化する酸化力の指標として、酸化還元電位が用いられる。過マンガン酸イオンの酸化還元電位は1.70Vであり、酸化剤として一般に用いられる過塩素酸カリウム(KClO4)(酸化還元電位1.20V)や次亜塩素酸ナトリウム(NaClO)(酸化還元電位1.63V)に比べて、酸化還元電位が高い。
(2)過マンガン酸イオンは反応速度が大きい。
過マンガン酸イオンは、酸化力の強い酸化剤として知られている過酸化水素(酸化還元電位1.76V)に比べて、酸化反応の反応速度が大きいので、酸化力の強さを速やかに発揮できる。
(3)過マンガン酸イオンは、人体に対して毒性が低く安全である。
(4)過マンガン酸塩は、後述する分散媒である水に、溶解度曲線から得られる水温に依存した溶解濃度以下であれば完全に溶解する。したがって、溶解残渣が基板の平滑性に悪影響を与えることがない。
本発明の実施形態の研磨液は、酸化ケイ素(シリカ)粒子、酸化セリウム(セリア)粒子、酸化アルミニウム(アルミナ)粒子、酸化ジルコニウム(ジルコニア)粒子、酸化チタン(チタニア)粒子等の研磨砥粒を、実質的に含有していないことを特徴とする。研磨液が砥粒を含有せず、前記したように洗浄後に砥粒の残渣が生じないので、砥粒残渣に起因する結晶欠陥の発生を防止できる。また、砥粒の分散性に留意することなく研磨液を使用できる、実質的に砥粒の凝集が発生しないため、被研磨面への機械的ダメージが抑制される、という利点がある。
本発明の実施形態の研磨液のpHは、研磨特性の点から、11以下が好ましく、5以下がより好ましく、3以下が特に好ましい。pHが11超では、十分な研磨速度が得られないばかりでなく、被研磨面の平滑性が悪化するおそれがある。
本発明の実施形態の研磨液においては、分散媒として水が含有される。水は、前記酸化剤および必要に応じて添加される後述する任意成分を分散・溶解するための媒体である。水については、特に制限はないが、配合成分に対する影響、不純物の混入、pH等への影響の観点から、純水、超純水、およびイオン交換水(脱イオン水)が好ましい。
本発明の実施形態の研磨液は、前記した各成分が前記所定の割合で含有され、均一に溶解した混合状態になるように調製されて、使用される。混合には、研磨液の製造に通常用いられる撹拌翼による撹拌混合方法を採ることができる。研磨液は、必ずしも、構成する研磨成分を予めすべて混合したものとして、研磨の場に供給する必要はない。研磨の場に供給される際に、研磨成分が混合されて、研磨液の組成になってもよい。
本発明の実施形態の研磨液を使用して研磨を行うには、砥粒を内包しない公知の研磨パッドを使用し、この研磨パッドに前記した研磨液を供給しながら、研磨対象物である炭化ケイ素単結晶基板の被研磨面と研磨パッドとを接触させ、両者間の相対運動により研磨を行う。研磨対象物については、後述する。
本発明の実施形態の研磨液を用いて研磨する研磨対象物は、非酸化物単結晶である炭化ケイ素単結晶基板や窒化ガリウム単結晶基板であり、より好適には炭化ケイ素単結晶基板である。より具体的には、3C-SiC、4H-SiC、あるいは6H-SiCの結晶構造を有する炭化ケイ素単結晶基板が挙げられる。なお、前記3C-、4H-、および6H-は、Si-C対の積層順序により決まる炭化ケイ素の結晶多形を表す。実施形態の研磨液を使用することで、高い研磨速度を得ることができる。また、以下に示す表面性状の主面(研磨済み主面)を得ることができる。
CMP工程の前工程であるダイヤモンド研磨後の炭化ケイ素単結晶基板の主面には、ダイヤモンド研磨による機械的ダメージが生じており、表面にスクラッチが形成されているだけでなく、内部まで結晶歪等の欠陥が生じた加工変質層が生成されている。前記した従来の研磨スラリーによるCMPでも、相当長時間の研磨を行うことで、ダイヤモンド研磨により生じた加工変質層を除去することは可能であり、図4(a)および図4(b)に模式的に示すように、結晶構造に由来する、平坦なテラス1領域と段差領域である原子ステップ2とが交互に連続する原子ステップ・テラス構造を有する研磨済み主面を得ることができる。なお、図4(b)に示すC軸は、図4(a)において紙面に垂直な方向である。
ステップフロー方式による炭化ケイ素単結晶基板上への半導体層のエピタキシャル成長のメカニズムと、原子ステップのフロント端線部の役割について、図5に基づいて説明する。
(1-1)
例1~4の各研磨液を、以下に示すようにして調製した。まず、表1に示す酸化剤である過マンガン酸カリウムに純水を加え、撹拌翼を用いて10分間撹拌した。次いで、この液に、pH調整剤として、例1~3では硝酸を、例4では水酸化カリウムを撹拌しながら徐々に添加して、表1に示す所定のpHに調整し、研磨液を得た。各例において使用した酸化剤である過マンガン酸カリウムの研磨液全体に対する含有割合(濃度;質量%)を、表1に示す。なお、表1における酸化剤濃度は、過マンガン酸イオンの濃度ではなく、過マンガン酸カリウムの濃度である。
例5および例6の研磨剤液を、以下に示すようにして調製した。例5においては、1次粒子径が40nm、2次粒子径が約70nmのシリカ固形分が約40質量%のコロイダルシリカ分散液に、純水を加え、撹拌翼を用いて10分間撹拌した。次いで、この液に、金属塩としてバナジン酸アンモニウムを撹拌しながら加え、最後に過酸化水素水を添加して30分間撹拌し、表1に示す各成分濃度に調整された研磨剤液を得た。
例6においては、1次粒子径が80nm、2次粒子径が約110nmのシリカ固形分が約40質量%のコロイダルシリカ分散液に、純水を加えて10分間撹拌した。次いで、この液に、酸化剤として過マンガン酸カリウムを撹拌しながら加えた後、硝酸を徐々に添加して表1に示すpHに調整し、研磨剤液を得た。例5および例6で使用した各成分の研磨剤全体に対する含有割合(濃度;質量%)を、表1に示す。
例1~4で得られた各研磨液および例5,6で得られた各研磨剤液のpHを、横河電機社製のpH81-11を使用し25℃で測定した。測定結果を表1に示す。
例1~4で得られた各研磨液および例5,6で得られた各研磨剤液について、以下の方法で研磨特性の評価を行った。
研磨機としては、MAT社製小型片面研磨装置を使用した。研磨パッドとしては、SUBA800-XY-groove(ニッタハース社製)を使用し、研磨前にダイヤディスクおよびブラシを用いて、研磨パッドのコンディショニングを行った。
研磨液または研磨剤液の供給速度を25cm3/分、研磨定盤の回転数を68rpm、基板保持部の回転数を68rpm、研磨圧を5psi(34.5kPa)として、30分間研磨を行った。
被研磨物として、ダイヤモンド砥粒を用いて予備研磨処理を行った3インチ径の4H-SiC基板を準備した。そして、主面(0001)のC軸に対するオフ角が0°+0.25°以内のSiC単結晶基板(On-axis基板)を使用し、Si面側を研磨し評価した。
研磨速度は、前記SiC単結晶基板の単位時間当たりの厚さの変化量(nm/hr)で評価した。具体的には、厚さが既知の未研磨基板の質量と各時間研磨した後の基板質量とを測定し、その差から質量変化を求めた。そして、この質量変化から求めた基板の厚さの時間当たりの変化を、下記の式を用いて算出した。研磨速度の算出結果を表1に示す。
(研磨速度(V)の計算式)
Δm=m0-m1
V=Δm/m0 × T0 × 60/t
(式中、Δm(g)は研磨前後の質量変化、m0(g)は未研磨基板の初期質量、m1(g)は研磨後基板の質量、Vは研磨速度(nm/hr)、T0は未研磨基板の厚さ(nm)、tは研磨時間(min)を表す。)
例1~4の各研磨液および例5,6の各研磨剤液で研磨したOn-axis基板の研磨後の主面を、横2μm×縦1μmの範囲で、AFMにより観察したところ、いずれも原子ステップ・テラス構造の生成が確認された。次いで、得られたAFM像から、前記範囲にある複数のフロント端線部のそれぞれについて平均線粗さ(Ra)を測定し、その平均値としてRを求めた。なお、AFMとしては、D3100(Veeco社製)を使用した。
図6に、フロント端線部2aの平均線粗さ(Ra)の測定位置を破線で示す。この図において、符号1は、原子ステップ・テラス構造におけるテラスを示す。
A(%)=(R(nm)/h(nm))×100
なお、ケイ素と炭素対からなるバイレーヤー原子ステップの高さ(h)は、前記したように1.008nm/4により計算され、約0.25nmになる。
本出願は、2011年10月7日出願の日本特許出願2011-222782に基づくものであり、その内容はここに参照として取り込まれる。
Claims (7)
- 結晶構造に由来する原子ステップとテラスとからなる原子ステップ・テラス構造を有する主面を備え、前記原子ステップ・テラス構造において、前記原子ステップのフロント端線部の平均線粗さが、前記原子ステップの高さに対して20%以下の割合である、炭化ケイ素単結晶基板。
- 前記主面は、結晶をエピタキシャル成長させて炭化ケイ素半導体層または窒化ガリウム半導体層を形成する面である、請求項1に記載の炭化ケイ素単結晶基板。
- 炭化ケイ素単結晶基板の所定の面方向の主面を、結晶構造に由来する原子ステップとテラスとからなる原子ステップ・テラス構造を有し、かつ該原子ステップ・テラス構造において、前記原子ステップのフロント端線部の平均線粗さが、前記原子ステップの高さに対して20%以下の割合となるように、化学的機械的に研磨するための研磨液であり、
酸化還元電位0.5V以上の遷移金属を含む酸化剤と水とを含み、砥粒を含まない、研磨液。 - 前記酸化剤は過マンガン酸イオンである、請求項3に記載の研磨液。
- 前記過マンガン酸イオンの含有量は研磨剤全量に対して0.05質量%以上5質量%以下である、請求項4に記載の研磨液。
- pHが11以下である、請求項3~5のいずれか1項に記載の研磨液。
- pHが5以下である、請求項6に記載の研磨液。
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US10040972B2 (en) | 2018-08-07 |
KR20140076566A (ko) | 2014-06-20 |
US20170283987A1 (en) | 2017-10-05 |
US20170342298A1 (en) | 2017-11-30 |
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