WO2013038889A1 - 太陽電池用インターコネクタ材料、太陽電池用インターコネクタ、およびインターコネクタ付き太陽電池セル - Google Patents

太陽電池用インターコネクタ材料、太陽電池用インターコネクタ、およびインターコネクタ付き太陽電池セル Download PDF

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WO2013038889A1
WO2013038889A1 PCT/JP2012/071411 JP2012071411W WO2013038889A1 WO 2013038889 A1 WO2013038889 A1 WO 2013038889A1 JP 2012071411 W JP2012071411 W JP 2012071411W WO 2013038889 A1 WO2013038889 A1 WO 2013038889A1
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Prior art keywords
solar cell
interconnector
layer
plating layer
plating
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PCT/JP2012/071411
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English (en)
French (fr)
Japanese (ja)
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稔也 津田
友森　龍夫
興 吉岡
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東洋鋼鈑株式会社
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Priority to CN201280045102.4A priority Critical patent/CN103814157B/zh
Priority to KR1020147009313A priority patent/KR101968788B1/ko
Publication of WO2013038889A1 publication Critical patent/WO2013038889A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell interconnector material, a solar cell interconnector, and a solar cell with an interconnector.
  • the solar cell interconnector is a wiring material that plays a role of collecting electrical energy converted mainly by the solar cells by connecting the solar cells made of crystalline Si.
  • a solder-coated rectangular copper wire obtained by coating a rectangular copper wire with solder hot dipping has been used as an interconnector material for such a solar cell.
  • solder-coated flat copper wire is used as an interconnector material for solar cells
  • Patent Document 1 proposes an interconnector material for a solar cell in which a flat aluminum substrate is subjected to copper plating and coated with solder hot dipping.
  • a flat aluminum substrate is subjected to copper plating, since copper is expensive, a cheaper interconnector material that does not use copper is required.
  • the present invention has been made in view of such a situation, and its purpose is substantially free of copper and is relatively inexpensive, and the occurrence of defects such as cracking and peeling of the film due to the thermal history of soldering.
  • An object of the present invention is to provide a solar cell interconnector material and a solar cell interconnector that are effectively prevented.
  • Another object of the present invention is to provide a solar cell with an interconnector obtained by using such an interconnector for solar cells.
  • the present inventors have found that the above problems can be solved by a solar cell interconnector material having a Ni plating layer having a thickness of 0.2 ⁇ m or more and an Sn plating layer in order from the substrate side on the Al substrate surface.
  • the present invention has been completed.
  • an interconnector material for a solar cell which has a Ni plating layer and a Sn plating layer having a thickness of 0.2 ⁇ m or more in order from the substrate side on the surface of the Al substrate. Is done.
  • the present invention it is obtained by forming a solder layer on the surface of the Sn plating layer of the interconnector material for solar cell, and the Sn—Ni alloy layer is sequentially formed on the surface of the Al substrate from the substrate side.
  • an interconnector for a solar cell characterized by having a solder layer.
  • the Sn—Ni alloy layer is formed by causing diffusion in the Ni plating layer and the Sn plating layer by heat at the time of forming the solder layer.
  • the ratio of the Ni strength of the Sn—Ni alloy layer when analyzed by high-frequency glow discharge optical emission spectrometry to the Ni strength of the Ni plating layer before thermal diffusion is “Ni strength of Sn—Ni alloy layer”. / Ni strength of Ni plating layer before thermal diffusion "is preferably 0.15 or more.
  • the Sn—Ni alloy layer is continuously formed so as to cover the surface of the Al base.
  • a solar battery cell with an interconnector wherein any one of the above solar battery interconnectors is connected to a solar battery cell.
  • the solar battery interconnector and the solar battery cell are connected by soldering.
  • the present invention it is not necessary to substantially use copper, so that it is relatively inexpensive, and the occurrence of defects such as cracking and peeling of the film due to the thermal history of soldering is effectively prevented.
  • the interconnector material for solar cells, the interconnector for solar cells, and the solar cell with an interconnector obtained using such an interconnector for solar cells can be provided.
  • FIG. 1 is a diagram showing a configuration of a solar cell interconnector material 100 according to the present embodiment.
  • FIG. 2 is a diagram showing a configuration of the solar cell interconnector 200 according to the present embodiment.
  • FIG. 3 is a diagram showing a configuration of a solar cell interconnector 200a in which the thickness of the Ni plating layer 20 before thermal diffusion is less than 0.2 ⁇ m.
  • 4A is a cross-sectional photograph of the solar cell interconnector sample of Example 2
  • FIG. 4B is a cross-sectional photograph of the solar cell interconnector sample of Comparative Example 1.
  • FIG. 1 is a diagram showing a configuration of a solar cell interconnector material 100 according to the present embodiment.
  • FIG. 2 is a diagram showing a configuration of the solar cell interconnector 200 according to the present embodiment.
  • FIG. 3 is a diagram showing a configuration of a solar cell interconnector 200a in which the thickness of the Ni plating layer 20 before thermal diffusion is less than 0.2 ⁇ m.
  • FIG. 1 is a diagram showing a configuration of a solar cell interconnector material 100 according to the present embodiment. As shown in FIG. 1, the solar cell interconnector material 100 according to this embodiment is formed by forming a Ni plating layer 20 and a Sn plating layer 30 on both surfaces of an Al base 10 in this order.
  • the aluminum plate constituting the Al base 10 is not particularly limited, and a pure aluminum plate or any JIS standard 1000 series, 2000 series, 3000 series, 5000 series, 6000 series, or 7000 series aluminum alloy sheet is used. Among them, a 1000 series O material is particularly preferable.
  • the thickness of the Al base 10 is not particularly limited, and may be a thickness that can secure sufficient conductivity as a solar cell interconnector, but is preferably 0.1 to 0.5 mm.
  • the Ni plating layer 20 is formed by performing nickel plating on the Al base material 10.
  • the method for forming the Ni plating layer 20 on the Al base 10 is not particularly limited, but it is difficult to directly provide the Ni plating layer on the Al surface, so the Zn layer is formed in advance by displacement plating. After that, a Ni plating layer is preferably formed thereon.
  • a method for forming a Zn layer as the underlayer will be described.
  • a pure aluminum plate or an aluminum alloy plate constituting the Al base 10 is subjected to a degreasing process, and then subjected to acidic etching and smut removal, followed by Zn substitution plating.
  • the substitution plating of Zn is performed through the steps of nitric acid immersion treatment, first Zn substitution treatment, zinc nitrate stripping treatment, and second Zn substitution treatment.
  • the water washing process is implemented after the process of each process.
  • the Zn layer formed by the first Zn substitution treatment and the second Zn substitution treatment is slightly dissolved when Ni plating is performed.
  • the Zn layer is desirably formed so that the coating amount in the state after Ni plating is preferably in the range of 5 to 500 mg / m 2 , more preferably in the range of 30 to 300 mg / m 2 .
  • the coating amount of the Zn layer can be adjusted by appropriately selecting the concentration of Zn ions in the treatment liquid and the time for immersion in the treatment liquid in the second Zn substitution treatment.
  • the Ni plating layer 20 is formed by performing Ni plating on the Zn layer as the base layer.
  • the Ni plating layer 20 may be formed using any plating method of electroplating or electroless plating.
  • the thickness of the Ni plating layer 20 is 0.2 ⁇ m or more, preferably 0.2 to 3.0 ⁇ m, more preferably 0.5 to 2.0 ⁇ m.
  • the Sn plating layer 30 is formed by heat generated when the solder layer is formed. And a Ni—Sn alloy layer by diffusion.
  • the Sn plating layer 30 is formed on the Ni plating layer 20 by performing Sn plating.
  • the Sn plating layer 30 may be formed using any plating method of electroplating or electroless plating.
  • the thickness of the Sn plating layer 30 is preferably 0.5 to 3.0 ⁇ m. When the thickness of the Sn plating layer 30 is too thin, solder wettability at the time of forming the solder layer on the Sn plating layer 30 is lowered, and it becomes difficult to form a good solder layer. On the other hand, if the Sn plating layer 30 is too thick, the effect of improving the solder wettability by increasing the thickness is saturated, which is disadvantageous in terms of cost.
  • FIG. 2 is a diagram showing a configuration of the solar cell interconnector 200 according to the present embodiment.
  • the solar cell interconnector 200 according to the present embodiment uses the solar cell interconnector material 100 shown in FIG. 1 and forms the solder layer 50 on the Sn plating layer 30 of the solar cell interconnector material 100. As shown in FIG. 2, an Sn—Ni alloy layer 40 and a solder layer 50 are formed in this order on both surfaces of the Al base 10.
  • the solder layer 50 can be formed by performing molten solder plating on the Sn plating layer 30 constituting the interconnector material 100 for a solar cell shown in FIG.
  • the Ni plating layer constituting the solar cell interconnector material 100 shown in FIG. 1 is formed by forming the solder layer 50 by hot-dip solder plating and by heat when the solder layer 50 is formed.
  • the Sn—Ni alloy layer 40 is formed below the solder layer 50 as shown in FIG.
  • the bath temperature of the molten solder plating when forming the solder layer 50 is preferably 140 to 300 ° C., more preferably 180 to 250 ° C. Further, the immersion time in performing the molten solder plating is preferably 3 to 15 seconds. If the bath temperature of the molten solder plating is too low, or if the immersion time when performing the molten solder plating is too short, the formation of the solder layer 50 becomes insufficient, while the bath temperature of the molten solder plating is too high. In the case where the immersion time in performing the molten solder plating is too long, the Sn component contained in the solder layer 50 diffuses to the Al base material 10, and solid solution hardening occurs between Al and Sn. May occur, and the Sn—Ni alloy layer 40 may be cracked or peeled off.
  • the thickness of the solder layer 50 is not particularly limited, but is preferably 10 to 30 ⁇ m, more preferably 15 to 30 ⁇ m.
  • the Sn—Ni alloy layer 40 is diffused between the Ni plating layer 20 and the Sn plating layer 30 constituting the solar cell interconnector material 100 shown in FIG. 1 when the solder layer 50 is formed.
  • the thickness of the Ni plating layer 20 before thermal diffusion that constitutes the Sn—Ni alloy layer 40 is 0.2 ⁇ m or more, preferably 0.2 to 3.0 ⁇ m, more preferably 0.5. Since the thickness is set to ⁇ 2.0 ⁇ m, the Sn—Ni alloy layer 40 after thermal diffusion can be continuously formed so as to cover the surface of the Al base 10. That is, the Sn—Ni alloy layer 40 after thermal diffusion can be formed in such a manner that there is no break.
  • An interrupted portion 41 is generated in the layer 40a.
  • the interrupted portion 41 is generated, the adhesiveness between the Al base 10 and the Sn—Ni alloy layer 40a is deteriorated starting from the interrupted portion 41, and the Sn-Ni alloy layer 40a is not cracked.
  • a corrosive substance enters through a problem that peeling is likely to occur or a crack generated during processing or the like, a potential difference due to the corrosive substance is generated in the interrupted portion 41, and the corrosion proceeds. This will cause a malfunction.
  • the thickness of the Ni plating layer 20 before thermal diffusion that constitutes the Sn—Ni alloy layer 40 is set to 0.2 ⁇ m or more, so that Sn— The Ni alloy layer 40 can be continuously formed so as to cover the surface of the Al base 10, thereby effectively solving the above problem. If the thickness of the Ni plating layer 20 before thermal diffusion is too thick, the effect of increasing the thickness is saturated, which is disadvantageous in terms of cost.
  • the Ni intensity of the Sn—Ni alloy layer 40 when analyzed by the high-frequency glow discharge optical emission spectrometry is “Sn—Ni relative to the Ni intensity of the Ni plating layer 20 before thermal diffusion.
  • the ratio of “Ni strength of alloy layer 40 / Ni strength of Ni plating layer 20 before thermal diffusion” is preferably 0.15 or more, more preferably 0.18 or more, and further preferably 0.34 or more. .
  • the upper limit of the ratio is 1 or less.
  • the ratio of “Ni strength of Sn—Ni alloy layer 40 / Ni strength of Ni plating layer 20 before thermal diffusion” is too low, that is, the Ni content in the Sn—Ni alloy layer 40 is small and Sn content is low. If the ratio is too large, the Sn component in the Sn—Ni alloy layer 40 diffuses into the Al base 10 and solid solution hardening occurs between Al and Sn, and the Sn—Ni alloy layer 40 Cracking or peeling may occur.
  • Ni strength of Sn—Ni alloy layer 40 / Ni strength of Ni plating layer 20 before thermal diffusion is determined using, for example, a high-frequency glow discharge optical emission spectrometer. 40 and the Ni plating layer 20 before thermal diffusion were measured while sputtering with Ar plasma, and in the Sn—Ni alloy layer 40 and the Ni plating layer 20 before thermal diffusion, each of the portions with the highest Ni strength was measured. The data were respectively obtained as the Ni strength of the Sn—Ni alloy layer 40 and the Ni strength of the Ni plating layer 20 before thermal diffusion, and these were used to calculate “Ni strength of the Sn—Ni alloy layer 40 / before thermal diffusion”. The “Ni strength of the Ni plating layer 20” can be calculated.
  • the method of setting the ratio of “Ni strength of Sn—Ni alloy layer 40 / Ni strength of Ni plating layer 20 before thermal diffusion” in the above range is not particularly limited.
  • the thickness of the Ni plating layer 20 before thermal diffusion is set to 0.2 ⁇ m or more, and the bath temperature of the molten solder plating when forming the solder layer 50 and the immersion time when performing the molten solder plating are within the above-described ranges. And a method of controlling them.
  • the solar cell interconnector 200 is replaced with an Al-alloy 10 instead of a structure in which the Sn—Ni alloy layer 40 is directly formed.
  • a configuration in which the Sn—Ni alloy layer 40 is formed on the substrate 10 via the Ni plating layer 20 may be employed.
  • the bath temperature of the molten solder plating when the solder layer 50 is formed, and the immersion time when performing the molten solder plating the Ni plating layer 20 is entered.
  • the Sn component does not completely diffuse. Therefore, in such a case, the Ni plating layer 20 remains between the Al base 10 and the Sn—Ni alloy layer 40.
  • the solar cell interconnector 200 of the present embodiment is formed by diffusion between the Ni plating layer having a thickness of 0.2 ⁇ m or more and the Sn plating layer 30 due to heat when the solder layer 50 is formed. Since the Sn—Ni alloy layer 40 is provided, it is possible to effectively prevent the occurrence of defects such as cracking and peeling of the Sn—Ni alloy layer 40 due to the thermal history of soldering. Moreover, the solar cell interconnector 200 of the present embodiment does not substantially contain copper, and is therefore relatively inexpensive and advantageous in terms of cost.
  • the solar cell with an interconnector obtained by connecting the solar cell interconnector 200 and the solar cell by soldering using the solar cell interconnector 200 of the present embodiment is good in quality. Moreover, it is also excellent in cost.
  • the Sn—Ni alloy layer 40 and the solder layer 50 are formed on both surfaces of a long Al plate (coil) according to the above-described method. Those formed in this order can be obtained by slitting them to the required width. In the solar cell interconnector 200 thus obtained, the Sn—Ni alloy layer 40 and the solder layer 50 are formed on the upper and lower surfaces, while the surface forming the thickness direction (slit surface) The Sn—Ni alloy layer 40 and the solder layer 50 are not formed.
  • the solar cell interconnector 200 of the present embodiment can be obtained, for example, by forming the Sn—Ni alloy layer 40 and the solder layer 50 on the entire surface of the flat Al wire according to the above-described method. it can.
  • the obtained solar cell interconnector 200 does not go through the slit process unlike the above-described method, and therefore, the interconnector described in Patent Document 1 (Japanese Patent Laid-Open No. 2006-49666) described above is used.
  • the Sn—Ni alloy layer 40 and the solder layer 50 are formed on both the upper and lower surfaces and the surface forming the thickness direction.
  • the size of the solar cell interconnector 200 according to this embodiment is not particularly limited, but the thickness is usually 0.1 to 0.7 mm, preferably 0.1 to 0.5 mm, and the width is Usually, it is 0.5 to 10 mm, preferably 1 to 6 mm, and the length may be appropriately set according to the arrangement of solar cells and the like.
  • Example 1 As a material for forming the Al base 10, an A1100-based O material was prepared (thickness 0.3 mm, width 40 mm, length 120 mm). Then, the Al base material is degreased with an alkali solution, then etched in sulfuric acid, then desmutted in nitric acid, sodium hydroxide: 150 g / L, Rochelle salt: 50 g / L, oxidized The first Zn substitution treatment was performed by dipping in a treatment solution containing zinc: 25 g / L and ferrous chloride 1.5 g / L.
  • the Al base material subjected to the first Zn substitution treatment is immersed in a 400 g / L nitric acid aqueous solution to remove the deposited Zn, and then in the same treatment liquid as the treatment liquid used in the first Zn substitution treatment.
  • a Zn layer was formed on the Al substrate with a coating amount of 100 mg / m 2 by performing the second Zn substitution treatment by dipping for 10 seconds.
  • Ni plating layer 20 having a thickness of 0.2 ⁇ m on the Zn layer.
  • Bath composition nickel sulfate 250 g / L, nickel chloride 45 g / L, boric acid 30 g / L pH: 3-5
  • the solar cell interconnector material 100 was obtained.
  • Bath composition stannous sulfate 30 g / L, sulfuric acid 70 ml / L, appropriate amount of brightener and antioxidant pH: 1 to 2
  • the obtained solar cell interconnector material 100 is immersed in a molten solder plating bath made of Sn—Pb solder whose bath temperature is adjusted to 200 ° C. for 3 seconds to form a solder layer 50 having a thickness of 20 ⁇ m.
  • the solar cell interconnector 200 shown in FIG. 2 was manufactured.
  • the solar cell interconnector 200 manufactured in this example is the one before slitting, and the size is 40 mm in width and 120 mm in length. By slitting together with the arrangement of solar cells, etc., It can be suitably used as a solar cell interconnector.
  • the ratio of “Ni strength of Sn—Ni alloy layer 40 / Ni strength of Ni plating layer 20 before thermal diffusion” was measured by the following method. That is, first, using a high-frequency glow discharge emission spectroscopic analyzer (GDS-3860, manufactured by Rigaku Corporation), Sn-Ni alloy layer 40 and thermal diffusion under the conditions of high-frequency power: 40 W and photomultiplier voltage (Ni): 370 V. The previous Ni plating layer 20 was measured while sputtering with Ar plasma. Then, from the obtained measurement data, the peak value of each Ni intensity is obtained in the Sn—Ni alloy layer 40 and in the Ni plating layer 20 before thermal diffusion, and the respective Ni intensity of the Sn—Ni alloy layer 40 is obtained. As the strength and Ni strength of the Ni plating layer 20 before thermal diffusion, “Ni strength of the Sn—Ni alloy layer 40 / Ni strength of the Ni plating layer 20 before thermal diffusion” was calculated. The results are shown in Table 1.
  • the continuity of the Sn—Ni alloy layer 40 is determined by observing the cross section of the solar cell interconnector 200 with a field emission scanning electron microscope (FE-SEM) (JSM-6330F, manufactured by JEOL Ltd.). evaluated. As a result of observation with a field emission scanning electron microscope, a discontinuous portion as shown in FIG. 3, that is, a portion where the solder layer 50 is in direct contact with the surface of the Al base 10 (Al When the Ni content ratio is substantially zero on the surface of the base material 10), it is determined that the Sn—Ni alloy layer 40 has no continuity, and such a discontinuous portion is observed. If not, it was determined that the continuity of the Sn—Ni alloy layer 40 was “present”. The results are shown in Table 1.
  • Example 2 Except that the thickness of the Ni plating layer 20 was changed to 0.5 ⁇ m (Example 2), 1 ⁇ m (Example 3), and 1.5 ⁇ m (Example 4), respectively, The battery interconnector material 100 and the solar cell interconnector 200 were obtained and evaluated in the same manner. The results are shown in Table 1.
  • Example 5 The interconnector material for solar cells was the same as in Example 1 except that the temperature of the molten solder plating tank when forming the solder layer 50 was changed from 200 ° C. to 250 ° C. and the solder layer 50 was formed with a thickness of 20 ⁇ m. 100 and solar cell interconnector 200 were obtained and evaluated in the same manner. The results are shown in Table 1.
  • Example 6 In the same manner as in Example 5, except that the thickness of the Ni plating layer 20 was changed to 0.5 ⁇ m (Example 6), 1 ⁇ m (Example 7), and 1.5 ⁇ m (Example 8), respectively.
  • the battery interconnector material 100 and the solar cell interconnector 200 were obtained and evaluated in the same manner. The results are shown in Table 1.
  • FIG. 4 (A) shows a cross-sectional photograph of the solar cell interconnector sample of Example 2
  • FIG. 4 (B) shows a cross-sectional photograph of the solar battery interconnector sample of Comparative Example 1.
  • Example 2 there is no discontinuous portion in the Sn—Ni alloy layer 40, and the Sn—Ni alloy layer 40 is continuous so as to cover the surface of the Al base material 10. Can be confirmed.
  • Comparative Example 1 it can be confirmed that there is a discontinuity in the Sn—Ni alloy layer 40 and the Sn—Ni alloy layer 40 has no continuity.

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PCT/JP2012/071411 2011-09-16 2012-08-24 太陽電池用インターコネクタ材料、太陽電池用インターコネクタ、およびインターコネクタ付き太陽電池セル WO2013038889A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280045102.4A CN103814157B (zh) 2011-09-16 2012-08-24 太阳能电池用互连件材料、太阳能电池用互连件及带互连件的太阳能电池单元
KR1020147009313A KR101968788B1 (ko) 2011-09-16 2012-08-24 태양전지용 인터커넥터 재료, 태양전지용 인터커넥터, 및 인터커넥터를 구비한 태양전지 셀

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JP7050786B2 (ja) * 2016-12-16 2022-04-08 ハルドール・トプサー・アクチエゼルスカベット 固体酸化物セルスタック用のインターコネクタ上のコーティングの堆積
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