WO2013037295A1 - Oled像素结构及驱动方法 - Google Patents
Oled像素结构及驱动方法 Download PDFInfo
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- WO2013037295A1 WO2013037295A1 PCT/CN2012/081304 CN2012081304W WO2013037295A1 WO 2013037295 A1 WO2013037295 A1 WO 2013037295A1 CN 2012081304 W CN2012081304 W CN 2012081304W WO 2013037295 A1 WO2013037295 A1 WO 2013037295A1
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- thin film
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- pixel structure
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/02—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes by tracing or scanning a light beam on a screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
Definitions
- the invention relates to a pixel structure of an organic light emitting display device and a driving method thereof. Background technique
- OLEDs Organic light-emitting display diodes
- the conventional passive matrix OLED device requires a shorter driving time of a single pixel, and thus it is necessary to increase the transient current and increase the power consumption.
- the application of high current will cause the voltage drop on the ITO line to be too large, and the OLED operating voltage will be too high, which will reduce its efficiency.
- the active matrix organic light-emitting display device (Active Matrix OLED) scans the input OLED current progressively through the switching transistor, which can solve these problems.
- the main problem to be solved is the luminance non-uniformity between pixels and pixels.
- AMOLED uses a low temperature polysilicon thin film transistor (LTPS TFT) to build a pixel circuit to provide the corresponding current for the OLED device.
- LTPS TFTs Compared with general amorphous-Si TFTs, LTPS TFTs have higher mobility and more stable characteristics, and are more suitable for use in AMOLED displays.
- LTPS TFTs fabricated on large-area glass substrates often have non-uniformities in electrical parameters such as threshold voltage and mobility. This non-uniformity translates into currents of OLED display devices. Differences in brightness and brightness, and are perceived by the human eye, namely the moire phenomenon (mura).
- the backplane power line has a certain resistance
- the driving current of all pixels is provided by ARVDD
- the power supply voltage in the backplane near the ARVDD power supply position is compared with the power supply position.
- the power supply voltage in the far area is high. This phenomenon is called IR Drop. Since the voltage of ARVDD is related to the current, IR Dro also causes current differences in different regions, which in turn produces mura when displayed.
- the OLED device may cause non-uniformity in electrical properties due to uneven film thickness during vapor deposition.
- the degradation of its internal electrical performance causes the threshold voltage to rise, the luminous efficiency to be lower, and the brightness to decrease.
- the threshold voltage As shown in Fig. 6(a), as the use time of the OLED device increases, the brightness will gradually decrease, and the threshold voltage will gradually increase. How to compensate for the degradation of OLED devices has become an important issue. OLED degradation can cause image sticking in the area where the fixed picture is displayed for a long time, which affects the display effect.
- the rise of the OLED threshold voltage is substantially linear with the luminance loss, and the relationship between the OLED current and the luminance is also linear.
- the driving current can be made to be wider in the OLED.
- the linearity increases as the voltage increases, thereby compensating for the loss of brightness.
- AMOLEDs can be divided into three categories according to the type of drive: digital, current and voltage.
- the digital driving method realizes the gray scale by controlling the driving time by using the TFT as a switch, and does not need to compensate for the non-uniformity, but the operating frequency thereof increases exponentially with the increase of the display size, resulting in a large power consumption, and is certain The physical limits of the design are reached within the range and are therefore not suitable for large size display applications.
- the current-driven method realizes gray scale by directly supplying currents of different sizes to the driving tube, which can better compensate TFT non-uniformity and IR Drop, but when writing low-gradation signals, small current is on the data line. Larger parasitic capacitance charging will cause the writing time to be too long.
- the driving IC provides a voltage signal representing the gray scale.
- the voltage signal is converted into a current signal of the driving tube inside the pixel circuit, thereby driving the OLED to realize the brightness gray scale.
- the method has the advantages of fast driving speed and simple realization, and is suitable for driving large-sized panels, and is widely used in the industry.
- additional TFT and capacitor components are needed to compensate for TFT non-uniformity and IR Drop.
- FIG. 7 shows the most traditional voltage-driven pixel circuit structure (2T1C) consisting of two TFT transistors and one capacitor.
- the switch tube T2 transmits the voltage on the data line to the gate of the driving tube T1, and the driving tube T1 converts the data voltage into a corresponding current supply to the OLED device.
- the driving tube T1 should be in the saturation region, in one row.
- a constant current is supplied during the scan time.
- the drive current can be expressed as:
- I OLED - ⁇ ⁇ - ⁇ -— ⁇ ⁇ Vdata- ARVDD-V TH f
- W/L is the transistor aspect ratio.
- Vdata is the data voltage
- ARVDD is the AMOLED backplane power supply, shared by all pixel cells
- VTH is the threshold voltage of the transistor.
- Document [1] discloses a pixel structure and control time that can compensate for VTH uniformity and IR drop. Order, as shown in Figure 8.
- the structure in Figure 8 can compensate for the effects of VTH non-uniformity, IR drop, and OLED degradation, but since it is a current-driven, it is not suitable for large-sized panels.
- Embodiments of the present invention provide a pixel structure of an improved organic light emitting display device (OLED) that causes a driving current flowing through the OLED device to be independent of a threshold voltage of a thin film transistor and a backplane power supply, thereby The problem of uneven luminance caused by the threshold voltage non-uniformity of the TFT driving tube and the IR drop of the backplane power supply is eliminated.
- OLED organic light emitting display device
- the pixel structure includes first to fifth thin film transistors, a capacitor, and an OLED device, wherein a drain of the first thin film transistor is connected to a negative power source through an OLED device, and a source connection of the first thin film transistor To the drain of the third thin film transistor, the source of the third thin film transistor is connected to the positive power source, one end of the capacitor is connected to the third node N3 between the first and third thin film transistors, and the other end of the capacitor is connected to the second The second node N2 between the source of the thin film transistor and the fourth thin film transistor, the drain of the second thin film transistor is connected to the fourth node N4 between the first thin film transistor and the OLED device, and the drain of the fourth thin film transistor
- the pole is connected to the first node N1 between the drain of the fifth thin film transistor and the gate of the first thin film transistor, the source of the fifth thin film transistor is connected to the data line, and the gate of the fifth and second thin film transistors is connected To the scan line, a
- the pixel structure is in a precharge period, the row scan voltage and the first control signal on the scan line are at a low level, the second control signal is at a high level, and the fourth thin film transistor is turned off.
- the first, second, third, and fifth thin film transistors are turned on, and the data voltage is transmitted to the gate of the first thin film transistor through the fifth thin film transistor.
- the pixel structure is in a compensation period
- the row scan voltage on the scan line is a low level
- the first control signal and the second control signal are at a high level
- the third and fourth films are The transistor is turned off
- the first, second, and fifth thin film transistors are turned on, and the data voltage is transmitted to the gate of the first thin film transistor through the fifth thin film transistor.
- the pixel structure is in a light emitting period
- the line scan voltage on the scan line is at a high level
- the first control signal and the second control signal are at a low level
- the second and fifth films are The transistor is turned off, and the first, third, and fourth thin film transistors are turned on.
- the pixel structure is within a precharge period and a compensation period, and the signal (DATA) on the data line is the actual data voltage.
- the first to fifth thin film transistors in the pixel structure are low temperature polysilicon thin film transistors.
- the aspect ratio of the first thin film transistor in the pixel structure is set to be capable of compensating for luminance loss due to degradation of the OLED device.
- a driving method for driving the above pixel structure wherein: in each frame image refreshing process, the following steps are performed for the pixel structure: in a precharge cycle, a scan line and The first control signal (EM) is at a low level, the second control signal (EMD) is at a high level, so that the fourth thin film transistor is turned off, and the first, second, third, and fifth thin film transistors are turned on; Cycle, the scan line is low, the first control signal (EM) and the second control signal (EMD) are at a high level, so that the third and fourth thin film transistors are turned off, the first, second, and fifth films The transistor is turned on; and during the illumination period, the scan line is at a high level, and the first control signal (EM) and the second control signal (EMD) are at a low level, so that the second and fifth thin film transistors are turned off, first, The third and fourth thin film transistors are turned on.
- Figure la shows the pixel structure of the present invention
- Figure lb shows the control timing of the pixel structure shown in Figure la;
- 2a to 2c illustrate circuit states of the pixel structure of FIG. 1 in three different periods;
- 3 is a graph showing a uniformity compensation simulation for a threshold voltage of a thin film transistor drive tube;
- Figure 4 shows a graph of compensation simulation for backplane power supply voltage drop
- Figure 5 shows a graph of a compensation simulation for OLED device degradation
- Figures 6a-c show a plot of the brightness and threshold voltage of an OLED device as a function of time of use
- Figure 7 shows a circuit diagram of a conventional pixel structure
- Figures 8a-b show a pixel compensation circuit diagram and a control timing diagram in Reference 1.
- the pixel circuit structure is composed of P-type TFT transistors 1 to 5, a capacitor 6 and an OLED 7, ARVDD and ARVSS are DC positive and negative levels, and DATA is a data voltage signal, and SCAN is The row scan voltage signal, EM and EMD are control signals, the pixel units in the same row share the SCAN and EM, EMD control signals, and the pixel units in the same column share the DATA data voltage signal.
- the drain of the first thin film transistor 1 is connected to the negative level of the backplane through the OLED device, the source of the first thin film transistor 1 is connected to the drain of the third thin film transistor 3, and the third The source of the thin film transistor 3 is connected to a positive level of the backplane, one end of the capacitor 6 is connected between the first thin film transistor 1 and the third thin film transistor 3 (N3), and the other end of the capacitor 6 is connected to the second thin film transistor 2.
- a source (N2) of the fourth thin film transistor 4 the drain of the second thin film transistor 2 is connected to the drain of the first thin film transistor 1 and the OLED device 7 (N4), and the drain of the fourth thin film transistor 4 is connected to the a drain of the thin film transistor 5 and a gate (N1) of the first thin film transistor 1, wherein a source of the fifth thin film transistor 5 is connected to the data line, and a gate of the fifth thin film transistor 5 and the second thin film transistor 2 is connected to The scan line, the first control signal (EM) is supplied to the gate of the third thin film transistor, and the second control signal (EMD) is supplied to the gate of the fourth thin film transistor.
- EM first control signal
- EMD the second control signal
- the working process of the pixel circuit is divided into three stages, pre-charging, compensation and illumination.
- the timing of the control signal is shown in Figure 1(b).
- the first stage is a precharge stage.
- SCAN SCAN
- EM is low
- EMD is high
- DATA is the actual data voltage.
- the transistor 4 is turned off, and the transistors 1, 2, 3, and 5 are turned on.
- the data voltage is transmitted through the transistor 5 to the first node N1 on the gate of the transistor 1;
- the third node N3 is connected to the ARVDD through the transistor 3, and its potential is ARVDD;
- the voltage at the four node N4 is ARVSS plus the OLED drive voltage.
- the capacitor 6 is connected between the third node N3 and the fourth node N4 at this time. The effect of precharging is to cause the third node N3 to reach a high potential in advance so that during the second phase of the compensation process, the transistor 1 can establish the correct initial voltage.
- the second stage is the compensation stage, as shown in Figure 2(b).
- SCAN is low
- EM and EMD are high
- Vdata is the actual data voltage.
- the transistors 3, 4 are turned off, and the transistors 1, 2, and 5 are turned on.
- the data voltage is transmitted through transistor 5 to the first node N1 on the gate of transistor 1. Since the third node N3 is connected to ARVDD through the transistor 3 before the EM goes high, the initial voltage of the third node N3 when the transistor 3 is turned off instantaneously is the high level ARVDD.
- the third node N3 is floating, and the transistor 1 is turned on, and the third node N3 is discharged to the ARVSS, so the potential of the third node N3 is gradually decreased until the transistor 1 is in the critical turn-off region, and then the third The voltage at node N3 is VDATA-VTH, where VTH is the threshold voltage of transistor 1.
- VTH is the threshold voltage of transistor 1.
- the current flowing through the transistor 1 and the OLED is getting smaller and smaller, and the potential of the fourth node N4 is also reduced until the transistor 1 is turned off and the current is zero.
- the voltage of the fourth node N4 is VOLED. 0, the threshold voltage of OLED 7. This is stored on capacitor 6
- the third stage is the lighting stage, as shown in Figure 2(c). At this stage, SCAN is high,
- V M ARVDD - V + V TH + V OLED ) ( 3 )
- the current flowing through transistor 1 is
- IOLED --M p -Cox ⁇ - (ARVDD - V + V m + V OLED > - ARVDD - V m )
- the current is independent of the threshold voltage and ARVDD, thus substantially eliminating the non-uniformity of the threshold voltage and the influence of the IR Drop.
- Figure 3 shows the simulation results for compensating for the non-uniformity of the threshold voltage.
- the maximum current drift may be more than 1.8 times, while in the structure of the present invention.
- Medium current fluctuation is less than 3%.
- Figure 4 shows the simulation result of compensating IR Drop.
- the ARVDD voltage drop drifts by ⁇ 0.5V, its current greatly drifts by 81%, and in the structure of the present invention, the current fluctuation is less than 3.4%.
- the Ioled current is related to the OLED wide voltage VOLED-0, which can compensate for the brightness loss caused by OLED degradation.
- VOLED-0 When the OLED device is degraded, VOLED-0 will gradually increase, and the luminous efficiency will decrease, requiring the first thin film transistor (drive tube) 1 to provide a larger current to maintain the same brightness. If the application makes Vdata ⁇ 0 and Vdata ⁇ V OLED ⁇ . , then with V OLED ⁇ . Increase,
- Ioled has a linear relationship with A voniD — o.
- the slope of the Ioled curve can be adjusted by setting the aspect ratio of the first thin film transistor 1 according to the OLED degradation measurement result, so that it is complementary to the luminance- ⁇ VOLED—0 curve. Compensate for the loss of brightness due to OLED degradation.
- Figure 5 shows the simulation results of compensating OLED degradation.
- the OLED wide-value voltage drifts 0 0.8V
- its current has a tendency to slowly decrease, which will increase the display brightness degradation.
- the current increases linearly with the increase of the OLED threshold voltage, which can effectively compensate the OLED brightness loss.
- Adjusting the aspect ratio of the first thin film transistor 1 can control the speed and range of increasing current.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12795318.0A EP2608192B1 (en) | 2011-09-14 | 2012-09-12 | Oled pixel structure and driving method |
US13/703,853 US9041634B2 (en) | 2011-09-14 | 2012-09-12 | Pixel structure of organic light emitting diode and driving method thereof |
JP2014530087A JP6084616B2 (ja) | 2011-09-14 | 2012-09-12 | Oled画素構造及び駆動方法 |
KR1020127032679A KR101443224B1 (ko) | 2011-09-14 | 2012-09-12 | 유기 발광 다이오드의 화소 구조 및 그것의 구동 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110271117.XA CN102651195B (zh) | 2011-09-14 | 2011-09-14 | 用于补偿发光不均匀的oled像素结构及驱动方法 |
CN201110271117.X | 2011-09-14 |
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Publication Number | Publication Date |
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WO2013037295A1 true WO2013037295A1 (zh) | 2013-03-21 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/CN2012/081304 WO2013037295A1 (zh) | 2011-09-14 | 2012-09-12 | Oled像素结构及驱动方法 |
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US (1) | US9041634B2 (zh) |
EP (1) | EP2608192B1 (zh) |
JP (1) | JP6084616B2 (zh) |
KR (1) | KR101443224B1 (zh) |
CN (1) | CN102651195B (zh) |
WO (1) | WO2013037295A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10176757B2 (en) | 2016-03-25 | 2019-01-08 | Boe Technology Group Co., Ltd. | Pixel circuit and driving method thereof, and display device |
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CN102651195B (zh) * | 2011-09-14 | 2014-08-27 | 京东方科技集团股份有限公司 | 用于补偿发光不均匀的oled像素结构及驱动方法 |
US10089930B2 (en) * | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
CN103325339B (zh) * | 2013-06-21 | 2016-05-25 | 京东方科技集团股份有限公司 | 像素电路及其驱动方法、有机发光显示面板及显示装置 |
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KR102278599B1 (ko) * | 2014-11-19 | 2021-07-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 구동 방법 |
KR102388912B1 (ko) * | 2014-12-29 | 2022-04-21 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치와 그 구동방법 |
CN104485074B (zh) * | 2014-12-30 | 2017-05-31 | 合肥鑫晟光电科技有限公司 | 像素驱动电路、方法和显示装置 |
KR20160092537A (ko) * | 2015-01-27 | 2016-08-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 로고 영역 휘도 조절 방법 |
CN104658481B (zh) | 2015-03-11 | 2017-03-22 | 京东方科技集团股份有限公司 | 一种像素补偿电路、显示装置和驱动方法 |
CN105489168B (zh) * | 2016-01-04 | 2018-08-07 | 京东方科技集团股份有限公司 | 像素驱动电路、像素驱动方法和显示装置 |
CN105788531A (zh) * | 2016-05-20 | 2016-07-20 | 深圳市华星光电技术有限公司 | Oled显示面板的驱动电路 |
CN106205491B (zh) * | 2016-07-11 | 2018-09-11 | 京东方科技集团股份有限公司 | 一种像素电路、其驱动方法及相关装置 |
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CN102651195B (zh) | 2014-08-27 |
JP6084616B2 (ja) | 2017-02-22 |
EP2608192A4 (en) | 2014-04-09 |
CN102651195A (zh) | 2012-08-29 |
JP2014530372A (ja) | 2014-11-17 |
EP2608192B1 (en) | 2021-03-03 |
KR20130038872A (ko) | 2013-04-18 |
US9041634B2 (en) | 2015-05-26 |
KR101443224B1 (ko) | 2014-09-22 |
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EP2608192A1 (en) | 2013-06-26 |
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