WO2013021921A1 - ガラスセラミックス体、発光素子搭載用基板、および発光装置 - Google Patents
ガラスセラミックス体、発光素子搭載用基板、および発光装置 Download PDFInfo
- Publication number
- WO2013021921A1 WO2013021921A1 PCT/JP2012/069751 JP2012069751W WO2013021921A1 WO 2013021921 A1 WO2013021921 A1 WO 2013021921A1 JP 2012069751 W JP2012069751 W JP 2012069751W WO 2013021921 A1 WO2013021921 A1 WO 2013021921A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass
- ceramic body
- glass ceramic
- flat
- filler
- Prior art date
Links
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- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 239000000945 filler Substances 0.000 claims abstract description 112
- 239000011521 glass Substances 0.000 claims abstract description 90
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims description 77
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 35
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000010445 mica Substances 0.000 claims description 8
- 229910052618 mica group Inorganic materials 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 38
- 239000000919 ceramic Substances 0.000 description 30
- 238000010304 firing Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 21
- 229910001593 boehmite Inorganic materials 0.000 description 16
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 16
- 230000007423 decrease Effects 0.000 description 15
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- 239000002994 raw material Substances 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 239000002002 slurry Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 8
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 6
- 238000001027 hydrothermal synthesis Methods 0.000 description 6
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- 238000007606 doctor blade method Methods 0.000 description 5
- 239000004014 plasticizer Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000006112 glass ceramic composition Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
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- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
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- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- -1 2-ethylhexyl Chemical group 0.000 description 1
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- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
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- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- GTBGXKPAKVYEKJ-UHFFFAOYSA-N decyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C(C)=C GTBGXKPAKVYEKJ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
- SCFQUKBBGYTJNC-UHFFFAOYSA-N heptyl prop-2-enoate Chemical compound CCCCCCCOC(=O)C=C SCFQUKBBGYTJNC-UHFFFAOYSA-N 0.000 description 1
- ZNAOFAIBVOMLPV-UHFFFAOYSA-N hexadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCOC(=O)C(C)=C ZNAOFAIBVOMLPV-UHFFFAOYSA-N 0.000 description 1
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- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- 229910052863 mullite Inorganic materials 0.000 description 1
- MDYPDLBFDATSCF-UHFFFAOYSA-N nonyl prop-2-enoate Chemical compound CCCCCCCCCOC(=O)C=C MDYPDLBFDATSCF-UHFFFAOYSA-N 0.000 description 1
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- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
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- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Definitions
- the present invention relates to a glass ceramic body, a light emitting element mounting substrate, and a light emitting device.
- light emitting devices having light emitting elements such as light emitting diode elements have been used with light emitting devices having light emitting elements for backlights of mobile phones and liquid crystal TVs, etc., with the increase in brightness and whiteness of light emitting devices having light emitting elements.
- a substrate in such a light-emitting device is required to have high thermal conductivity, to quickly dissipate heat generated from the light-emitting element, and to have high reflectivity and good productivity. Further, since it is necessary to prevent chipping or breakage due to stress applied to the substrate when mounting the light emitting element, a predetermined strength is also required.
- a glass ceramic substrate consists of glass powder and ceramic powder such as alumina powder. Since the difference in refractive index between glass and ceramic is large, and there are many interfaces between them, a high reflectance is obtained compared to conventional ceramic substrates. It is done. However, a higher reflectance is required for use as a light emitting element mounting substrate. Further, with respect to glass ceramic substrates, suppression of shrinkage during firing is also required from the viewpoint of reducing variations in various characteristics, for example, variations in reflectance, strength, and the like.
- a method of suppressing firing shrinkage of a glass ceramic substrate a method of orienting flat particles having an aspect ratio of 5 as ceramic particles in a predetermined direction is known (for example, see Patent Document 1). Further, as a method for improving the strength, a method of dispersing and containing ceramic particles having an aspect ratio of 4 or more and 10 or less is known (for example, see Patent Document 2).
- Patent Document 3 describes a method of improving the reflectance with a glass ceramic substrate containing glass and ceramic particles.
- a high-reflectance light reflector in which the area occupied by the particle group of ceramic particles having a particle diameter of 0.3 to 1.0 ⁇ m is 10 to 70% in a cross section viewed from above the glass ceramic substrate. has been proposed.
- the degree of crystallization is 50% or more, and during firing, the flowability and sinterability are likely to decrease due to crystallization of the glass component, and the inside of the substrate and the substrate Holes are likely to be formed on the surface.
- the reflectivity is slightly increased, but the substrate strength is decreased, and the plating solution used for the plating process easily enters the substrate from the holes. For this reason, after mounting the light-emitting element, problems such as poor connection may occur and reliability may be reduced.
- Japanese Unexamined Patent Publication No. 9-71472 Japanese Unexamined Patent Publication No. 2002-111210 Japanese Unexamined Patent Publication No. 2007-121613
- the present invention has been made in order to solve the above-described problems, and reduces light that passes through the substrate and leaks (i.e., exits) in directions other than the incident direction, and has fewer holes on the substrate surface and inside the substrate.
- An object of the present invention is to provide a glass ceramic body capable of suppressing chipping during mounting of a light emitting element, breakage during division, and the like.
- Another object of the present invention is to provide a light emitting element mounting substrate and a light emitting device using such a glass ceramic body.
- the glass ceramic body of the present invention is a glass ceramic body in which flat fillers are dispersed in a glass matrix, and the flat fillers are dispersed in the glass matrix so that individual thickness directions are substantially the same direction.
- the length of the flat filler in the flat direction is 0.5 to 20 ⁇ m
- the length of the flat ceramic particles in the thickness direction is The area occupied by the flat filler having a thickness of 0.02 to 0.25 ⁇ m is 30 to 48% per unit area of the cross section.
- the term “to” indicating the above numerical range is used in the sense that the numerical values described before and after it are used as the lower limit value and the upper limit value. Unless otherwise specified, “to” is the same in the following specification. Used with meaning.
- the light emitting element mounting substrate of the present invention is a light emitting element mounting substrate for mounting a light emitting element, and is characterized by utilizing the above-described glass ceramic body of the present invention.
- the light emitting device of the present invention includes the above-described light emitting element mounting substrate of the present invention and a light emitting element mounted on the light emitting element mounting substrate.
- the glass ceramic body of the present invention in the cross section in the thickness direction, by containing a flat filler having a predetermined shape in an amount within a predetermined range, generation of pores on the surface and inside is suppressed, and a decrease in strength can be prevented. Further, even in a state where there are few holes, high reflectance can be achieved.
- a glass ceramic body by applying such a glass ceramic body, sufficient light emission brightness can be obtained, chipping when mounting the light emitting element and breakage when dividing are suppressed, and connection due to penetration of the plating solution into the substrate A light emitting element mounting substrate and a light emitting device in which the occurrence of defects such as defects is suppressed can be obtained.
- the typical sectional view showing the glass ceramics object of the embodiment of the present invention The typical sectional view showing the section along the thickness direction of the flat alumina particle in the glass ceramics object of the present invention.
- Sectional drawing which shows the light-emitting device of embodiment of this invention.
- FIG. 1 is an explanatory diagram of an embodiment of the present invention, in which flat ceramic particles 12 (in the present specification, flat ceramic particles are also referred to as flat fillers) are oriented in a plate shape.
- flat ceramic particles 12 in the present specification, flat ceramic particles are also referred to as flat fillers
- FIG. 2 is a schematic diagram of a cross section in a normal direction relationship with the cross section of FIG. 1 (corresponding to a cross sectional view of the flat filler in the thickness direction).
- a glass ceramic body 10 has flat fillers 12 dispersed in a glass matrix 11 so that the thickness directions of the glass ceramic bodies 10 are substantially the same.
- the flat filler 12 is dispersed so that the flat surface of each particle is parallel to a certain plane.
- the flat surface of the flat filler 12 is the main surface of the light emitting element mounting substrate. It is distributed so that it becomes parallel.
- the thickness direction of the flat filler 12 is, for example, the vertical direction in the drawing shown in FIG. 2, and the flat direction (that is, the length direction) is a direction perpendicular to the thickness direction (see FIG. 2). 2 in the left-right direction).
- the glass matrix 11 is not particularly limited, but is preferably not crystallized after firing, that is, amorphous. That the glass matrix 11 is not crystallized means that there are no crystals precipitated from the glass derived from the glass powder as the raw material powder. Confirmation that the glass matrix 11 is not crystallized can be performed by X-ray diffraction. In this determination, when the maximum intensity (absolute value) of a peak derived from ceramic particles such as alumina particles in an X-ray diffraction spectrum is 100, a peak derived from glass having an intensity of 10 or more does not appear. Is not crystallized.
- the flat filler 12 when the cross section as shown in FIG. 2 is observed with a stereomicroscope, the flat filler 12 is dispersed in the glass matrix 11 so that the individual thickness directions are substantially the same.
- the flat filler 12 has a length in the flat direction (left and right direction in FIG. 2) of 0.5 to 20 ⁇ m and a length in the thickness direction (vertical direction in FIG. 2) of 0.02 to 0.25 ⁇ m. “Substantially the same direction” means that the same direction can be visually recognized when observed with a stereomicroscope. For this reason, the frequency
- the light that collides with the interface is repeatedly reflected or refracted due to the difference in refractive index between the glass and the ceramic particles, so that the light that passes through the substrate in the thickness direction and leaks (i.e., exits) other than above is reduced. Accordingly, it is possible to increase the amount of reflected light returning upward from the substrate.
- the average length in the flat direction and the average length in the thickness direction are determined by cutting the glass ceramic body 10 along a plane along the thickness direction as shown in FIG. 2, and using a scanning microscope (SEM) and image analysis. It is the average of the values obtained by measuring the length in the flat direction and the length in the thickness direction of each flat filler 12 in an arbitrary cross section of 100 ⁇ m 2 using an apparatus. Further, when the glass ceramic body is obtained by firing a green sheet made of a doctor blade method, the cutting direction is set to a direction substantially parallel to the forming direction of the doctor blade method. In this specification, unless otherwise specified, “substantially parallel” means that it can be visually recognized as parallel at the visual level.
- the length of the flat filler 12 in the flat direction (left-right direction in FIG. 2) is also referred to as “major axis”, and the thickness direction (FIG. 2).
- the length in the middle and up and down directions is also referred to as “minor axis”.
- the glass ceramic body 10 contains a flat filler 12 having a major axis of 0.5 to 20 ⁇ m and a minor axis of 0.02 to 0.25 ⁇ m. As shown in FIG. 2, in the cross section along the thickness direction of the flat filler, the flat filler 12 in which the length of the major axis and the minor axis satisfies the above range has an occupation area per unit area of the section of 30 to 48. % Is dispersed and contained. More preferably, it is 35 to 45%.
- the ratio of the flat filler 12 By setting the ratio of the flat filler 12 to 30% or more, the number of layers of the flat filler 12 in the thickness direction increases, and the number of times incident light collides with the interface between the glass matrix 11 and the flat filler 12 is increased.
- Reflectivity can be obtained and firing shrinkage can be suppressed.
- the ratio of the flat filler 12 by setting the ratio of the flat filler 12 to 48% or less, a decrease in sinterability due to a decrease in the ratio of the glass matrix 11 can be suppressed.
- the ratio of the flat filler 12 exceeds 48%, the sinterability between the glass and the flat filler 12 decreases, and voids are likely to be generated on the surface and inside of the substrate, resulting in a decrease in substrate strength.
- the glass ceramic body 10 is cut, and the arbitrary shape is obtained using a scanning microscope (SEM) and an image analysis device.
- SEM scanning microscope
- the area of each flat filler 12 can be measured and summed up.
- all flat fillers having different chemical compositions such as alumina and mica are used.
- the average maximum length which is the average of the maximum length of the major axis
- the average length of 20 ⁇ m and the average value of the minor axis is preferably 0.02 to 0.25 ⁇ m.
- those having an average aspect ratio (average maximum length / average length) of 25 to 80, which is a ratio of the average maximum length to the average length are preferable. As will be described later, this average aspect ratio is also referred to as a cross-sectional particle aspect ratio.
- the flat filler 12 as a raw material powder can be used by mixing those having different average aspect ratios.
- the total value of the values obtained by multiplying the average aspect ratios of the individual flat fillers 12 and their abundance ratios is defined as the apparent average aspect ratio.
- the flat filler As the blending ratio of the flat filler as the raw material powder for obtaining the above-mentioned area, the flat filler is preferably 35 to 60% by mass with respect to the total amount of the glass powder and the flat filler. A more preferable blending ratio of the flat filler is 40 to 58% by mass, and more preferably 45 to 55% by mass.
- the ratio of the flat filler By setting the ratio of the flat filler to 35% by mass or more, the number of times the incident light collides with the interface between the glass matrix 11 and the flat filler 12 can be increased to obtain high reflectance, and firing shrinkage can be suppressed.
- the ratio of the flat filler is 60% by mass or less, it is possible to suppress a decrease in sinterability due to a decrease in the ratio of the glass matrix 11.
- the glass ceramic body 10 has an aspect ratio (in the area occupied by the flat filler group having a major axis of 0.5 to 20 ⁇ m and a minor axis of 0.02 to 0.25 ⁇ m in a cross section as shown in FIG.
- the area occupied by the flat filler having a cross-sectional particle aspect ratio of 25 or more is more preferably 30% or more, and particularly preferably 35% or more.
- the cross-sectional particle aspect ratio of the flat filler 12 is a ratio of the major axis to the minor axis, and is a value represented by (major axis / minor axis).
- the cross-sectional particle aspect ratio of the flat filler 12 is preferably 25 to 80.
- a material made of at least one ceramic selected from the group consisting of alumina, mica, silica, and boron nitride is preferably used.
- alumina and mica are preferably used.
- alumina preferred is alumina obtained by hydrothermal synthesis (for example, trade name: Seraph, manufactured by Kinsei Matec Co., Ltd.).
- a part of the flat filler 12 typified above is an aspect such as Al 2 O 3 , SiO 2 , ZrO 2 , TiO 2 , MgO, mullite, AlN, Si 3 N 4 , SiC, forsterite and cordierite.
- the amount of substitution of the amorphous filler is up to an amount occupying 23% by mass of the entire glass ceramic body.
- the average length of the major axis of the flat filler 12 is preferably 0.5 to 20 ⁇ m, and the average length of the minor axis is 0.02 to It is preferable that it is 0.25 ⁇ m.
- the average aspect ratio (average length of major axis / average length of minor axis), which is the ratio of the average length of the major axis to the average length of the minor axis, is referred to herein as the average cross-sectional particle aspect ratio, It is preferably 25 to 80.
- the glass constituting the glass matrix 11 is not necessarily limited as long as it does not produce crystals in the firing temperature range during firing.
- the glass matrix 11 has a refractive index difference of 0.15 or more with respect to ceramics such as flat fillers, particularly alumina. preferable. That is, when the refractive index of glass is a and the refractive index of alumina is b, the absolute value of (ba) is preferably 0.15 or more, more preferably 0.17 or more, and particularly preferably 0.19 or more. .
- the difference in refractive index between glass and alumina can be 0.15 or more, scattering at the interface can be improved and the reflectance can be increased.
- Such glass preferably of SiO 2 -B 2 O 3 based, SiO 2 -B 2 O 3 -MO-based: glass are more preferable for (M alkaline earth), SiO 2 -B 2 O 3 —Al 2 O 3 —MO (M: alkaline earth) glass is particularly preferred.
- the refractive index of such glass can be calculated using Appen's coefficient.
- Table 1 shows additivity factors (coefficients) of the respective components in the silicate glass containing alkali.
- SiO 2 and B 2 O 3 that are glass network formers, Al 2 O 3 that increases the stability, chemical durability, and strength of the glass produces a glass having a low refractive index.
- the total content of SiO 2 , B 2 O 3 and Al 2 O 3 is preferably 57 mol% or more, more preferably 62 mol% or more, and further preferably 67 mol% or more.
- the content of B 2 O 3 in the glass is preferably 10 mol% or more.
- ZrO 2 filler has a high refractive index, it is inferior in sinterability with glass. Therefore, when it is blended with glass matrix 11, the strength of the substrate is lowered due to insufficient sintering between glass and ZrO 2 filler. Or a void may be formed inside the substrate.
- the content of B 2 O 3 10 mol% or more the sinterability between the glass and the ZrO 2 filler is enhanced. Therefore, even when the ZrO 2 filler is used as the ceramic particles, the generation of pores and the strength It can be difficult to cause a decrease.
- Alkaline earth metal oxide is added to increase the stability of the glass, lower the glass melting temperature and the glass transition point (Tg), and improve the sinterability.
- CaO is particularly preferable as the alkaline earth metal oxide because the sinterability of the glass ceramic body 10 can be improved.
- the content of the alkaline earth metal oxide is preferably 15 to 40 mol% from the viewpoints of glass stability, glass melting temperature, glass transition point (Tg), sinterability, and the like. By setting the content of the alkaline earth metal oxide to 15 mol% or more, an excessive increase in the glass melting temperature can be suppressed.
- the content of the alkaline earth metal oxide is 40 mol% or less, the refractive index of the glass can be suppressed from being excessively increased, and the refractive index difference from the ceramic particles can be increased to increase the reflectance.
- the content of the alkaline earth metal oxide is more preferably 18 to 38 mol%, still more preferably 20 to 35 mol%.
- Alkali metal oxides such as K 2 O and Na 2 O that lower the glass transition point (Tg) can be added in the range of 0 to 10 mol%.
- These alkali metal oxides are preferably contained from the viewpoint of producing a glass having a low refractive index because the degree of increasing the refractive index is remarkably low as compared with alkaline earth metal oxides.
- chemical durability, particularly acid resistance may be lowered, and electrical insulation may be lowered.
- the total content of K 2 O and Na 2 O is preferably 1 to 8 mol%, more preferably 1 to 6 mol%.
- ZnO, TiO 2 , and SnO can be added for the purpose of lowering the softening point as in the case of alkaline earth metal oxides.
- 20 mol% or less is preferable.
- a typical example of the glass of the glass matrix is SiO 2 —B 2 O 3 -based glass containing 15 to 40 mol% of CaO in terms of oxide.
- SiO 2 is preferably 38 to 60 mol%
- B 2 O 3 is preferably 13 to 25 mol%.
- glass is not necessarily limited to what consists of said components, Other components can be contained in the range with which various characteristics, such as a refractive index difference, are satisfy
- the total content is preferably 10 mol% or less, and more preferably 5 mol% or less.
- flat alumina particles are preferably produced by a method in which flat boehmite particles are produced by hydrothermal synthesis of aluminum hydroxide and the boehmite particles are heat-treated. According to such a method, the crystal structure can be adjusted by adjusting the heat treatment of boehmite particles, particularly the heat treatment temperature.
- the production method will be specifically described.
- reaction raw material containing aluminum hydroxide and water are filled in an autoclave, heated under pressure, and hydrothermal synthesis is performed with no stirring or low-speed stirring.
- the reaction product obtained by this hydrothermal synthesis is washed, filtered, and dried to obtain boehmite particles.
- the reaction raw material may be added with a pH adjusting agent as necessary.
- a pH adjuster include hydroxides of alkali metals such as sodium and potassium, hydroxides of alkaline earth metals such as barium, calcium and strontium, and aluminates thereof.
- the solubility of aluminum hydroxide which is the raw material
- the reaction time can be shortened.
- the size of the boehmite particles produced can be increased.
- the amount of water added as a reaction raw material is preferably 2 to 25 times by mass with respect to aluminum hydroxide. If the mass ratio is less than 2 times, the reaction raw materials cannot be sufficiently reacted. On the other hand, if the mass ratio is more than 25 times, the amount of wasted water increases, resulting in an increase in production cost and a decrease in productivity. .
- the (meth) acrylic acid ester monomer indicates acrylic acid ester and methacrylic acid ester, which are collectively referred to as (meth) acrylic acid ester. More specific examples of (meth) acrylic acid esters include, for example, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, heptyl acrylate, hexyl acrylate, octyl acrylate, nonyl acrylate, acrylic acid 2 -Ethylhexyl, dodecyl acrylate, butyl methacrylate, hexyl methacrylate, octyl methacrylate, decyl methacrylate, dodecyl methacrylate, hexadecyl methacrylate and the like.
- the (meth) acrylic acid ester-based polymer is, in addition to the above-mentioned polymer composed of a single type of (meth) acrylic acid ester, these copolymers, and further (meth) acrylic acid ester, ethylene, It shall include a polymer or copolymer composed of different monomers such as styrene.
- the temperature in the autoclave during hydrothermal synthesis is preferably 110 to 300 ° C. If it is less than 110 ° C., it is difficult to obtain boehmite particles as a reaction product, and if it exceeds 300 ° C., a large amount of energy is consumed to maintain the temperature, which is disadvantageous in terms of cost.
- the reaction time is preferably 4 to 24 hours, although the heating time varies depending on the situation of stirring or standing. If it is less than 4 hours, the aluminum hydroxide may be unreacted. On the other hand, if the reaction is continued for more than 24 hours, the productivity is lowered, which is disadvantageous in terms of cost.
- the alumina particles can be produced by firing the boehmite particles obtained by the above method at a temperature of 450 to 1500 ° C. in an electric furnace or the like. At this time, a ⁇ -alumina crystal structure at 450 to 900 ° C., a ⁇ -alumina crystal structure at 900 to 1100 ° C., a ⁇ -alumina crystal structure at 1100 to 1200 ° C., and ⁇ -alumina at 1200 to 1500 ° C. A crystal structure of the type is mainly obtained.
- Alumina particles obtained by firing boehmite particles retain the shape of the boehmite particles before firing, and this does not depend on the type of alumina. Therefore, flat alumina particles can be obtained by using flat particles as boehmite particles.
- Calcination time is preferably 1 to 4 hours, more preferably 1.5 to 3.5 hours. If it is less than 1 hour, firing is insufficient and it is difficult to obtain alumina particles. Moreover, since the aluminization is almost completed within 4 hours, firing for more than 4 hours is not economical.
- the above method can be mentioned as a preferable method, but it is not necessarily limited to the above method, and any known production method can be adopted as long as a predetermined crystal structure and shape can be obtained.
- the glass ceramic body 10 of the present invention has been described.
- the ceramic particles do not necessarily have to be flat fillers, and a limit that does not contradict the purpose of the present invention as necessary.
- an amorphous filler can be contained.
- the average bending strength of the glass ceramic body 10 is preferably 180 MPa or more, and more preferably 200 MPa or more.
- the reflectance at a wavelength of 460 nm is preferably 83% or more, and more preferably 90% or more.
- the glass ceramic body 10 contains a ZrO 2 filler, it is preferable because a higher reflectance can be obtained.
- FIG. 3 is a cross-sectional view showing a light emitting device 20 to which the glass ceramic body 10 of the present invention is applied.
- the light emitting device 20 includes a light emitting element mounting substrate 21 at least partially made of the glass ceramic body 10.
- two light emitting elements 22 are mounted on the substrate 21 and are electrically connected in series by bonding wires 23, and a sealing layer 24 is provided so as to cover the light emitting elements 22 and the bonding wires 23.
- the light emitting device 20 is obtained.
- the substrate 21 includes, for example, a substantially flat substrate main body 211 and a frame body 212 provided on the surface of the substrate main body 211 that is the mounting surface of the light emitting element 22.
- a pair of element connection terminals 213 are provided on the mounting surface of the substrate body 211, and a pair of external connection terminals 214 that are electrically connected to an external circuit are provided on the back surface.
- a pair of through conductors 215 that electrically connect the element connection terminals 213 and the external connection terminals 214 are provided inside the substrate body 211.
- substantially flat form means that it can visually recognize with a flat plate on a visual level.
- a portion excluding conductor portions such as the element connection terminal 213, the external connection terminal 214, and the through conductor 215 is the glass ceramic body 10 of the present invention.
- the part used as the glass ceramic body 10 should just be at least one part other than a conductor part, for example, other than the conductor part in the board
- substrate body 211 may be sufficient as it.
- the flat filler 12 usually has a thickness direction that coincides with the thickness direction of the substrate 21, in other words, the flat surface of the flat filler has a mounting surface and a back surface of the substrate 21. And so as to be substantially parallel to each other.
- a slurry is prepared by adding a binder and, if necessary, a plasticizer, a solvent, a leveling agent, a dispersant and the like to a glass ceramic composition containing at least glass powder and a flat filler. This is formed into a sheet by a doctor blade method or the like and dried to produce a green sheet.
- the glass powder is obtained by producing glass containing the above glass components by a melting method and pulverizing by a dry pulverization method or a wet pulverization method.
- a dry pulverization method it is preferable to use water as a solvent.
- a pulverizer such as a roll mill, a ball mill, or a jet mill can be used.
- the particle size of the glass powder is preferably 0.5 to 3 ⁇ m with a 50% particle size (D 50 ).
- D 50 a 50% particle size
- the 50% particle size of the glass powder is less than 0.5 ⁇ m, the glass powder tends to agglomerate, making it difficult to handle and making it difficult to disperse uniformly.
- the 50% particle size of the glass powder exceeds 3 ⁇ m, the glass softening temperature may increase or the sintering may be insufficient.
- the particle size can be adjusted by classification as necessary after pulverization, for example.
- the particle size of the powder shown in this specification is obtained by a particle size measuring device (trade name: MT3100II, manufactured by Nikkiso Co., Ltd.) by a laser diffraction / scattering method.
- the long diameter of the flat filler 12 is 0.5 to 20 ⁇ m and the short diameter is 0.02 to 0.25 ⁇ m.
- a slurry is obtained by blending a glass ceramic composition comprising such glass powder and a flat filler with a binder and, if necessary, adding a solvent (organic solvent), a plasticizer or the like.
- the blending ratio of the flat filler is preferably 35 to 60% by mass, more preferably 40 to 58% by mass with respect to the total amount of the glass powder and the flat filler.
- binder for example, polyvinyl butyral, acrylic resin or the like can be suitably used.
- plasticizer for example, dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate and the like can be used.
- solvent aromatic or alcoholic organic solvents such as toluene, xylene and butanol can be used. It is preferable to use a mixture of an aromatic solvent and an alcohol solvent. Further, a dispersant or a leveling agent can be used in combination.
- the composition of the slurry is, for example, 54.1% by mass of solid content (glass powder + alumina flat filler) and 36.5% of organic solvent (mixed solvent of toluene, xylene, isopropyl alcohol (2-propanol) and 2-butanol). % By mass, 0.8% by mass of the dispersant, 3.2% by mass of the plasticizer, and 5.4% by mass of the resin as the binder.
- At least glass powder and alumina powder are added to a mixed solvent obtained by mixing a leveling agent and a dispersant as necessary with an organic solvent, and the mixture is stirred with a ball mill using ZrO 2 as a medium.
- a vehicle in which a resin as a binder is dissolved in an organic solvent is added thereto, and the mixture is stirred with a stirring rod equipped with a propeller, and then filtered using a mesh filter. By stirring while evacuating, bubbles trapped inside can be removed.
- the obtained slurry is applied onto a PET film coated with a release agent using, for example, a doctor blade, formed into a sheet, and dried to produce a green sheet.
- the flat filler can be oriented by forming the green sheet so that the individual minor axes are substantially in the same direction.
- the slurry containing glass powder and flat filler passes through the gap formed by the tip of the blade part of the doctor blade device and the surface of the film, so that the slurry flow ( Streamline) is along the transport direction of the film.
- the flat filler dispersed in the slurry also passes through the gap so as to follow the flow of the slurry. Therefore, the flat filler in the green sheet is oriented so that the direction of the flat plane is parallel to the surface direction of the sheet.
- unfired conductors such as unfired element connection terminals 213, unfired external connection terminals 214, unfired through conductors 215, and the like are formed.
- the method for forming the unfired conductor is not particularly limited, and the conductor paste is applied by a screen printing method.
- the conductive paste for example, a paste obtained by adding a vehicle such as ethyl cellulose to a metal powder mainly containing any one of copper, silver, gold, aluminum and the like, and a solvent as required can be used. Among these, silver powder and copper powder are preferable.
- Degreasing is performed, for example, by holding at a temperature of 500 to 600 ° C. for 1 to 10 hours.
- the degreasing temperature is less than 500 ° C. or the degreasing time is less than 1 hour, the binder or the like may not be sufficiently decomposed and removed.
- the degreasing temperature is set to about 600 ° C. and the degreasing time is set to about 10 hours, the binder and the like can be sufficiently removed, but if this time is exceeded, productivity and the like may be lowered.
- Calcination is performed, for example, by holding at a temperature of 850 to 900 ° C. for 20 to 60 minutes, and particularly preferably at a temperature of 860 to 880 ° C. If the firing temperature is less than 850 ° C. or the firing time is less than 20 minutes, a dense sintered body may not be obtained. If the firing temperature is about 900 ° C. and the firing time is about 60 minutes, a sufficiently dense product can be obtained, and if this is exceeded, productivity and the like may be reduced.
- the substrate is transmitted in the thickness direction and leaks to other than the upper side (that is, The light emitted can be reduced and the reflectance can be increased, and the firing shrinkage in the flat direction can be suppressed.
- Examples; Examples 1 to 19, Comparative Examples; Examples 20 to 21 Each glass raw material was blended and mixed to form a raw material mixture so that the ratio of glass shown in Table 2 was obtained.
- the raw material mixture was put in a platinum crucible and melted at 1200 to 1500 ° C. for 60 minutes, and then the melt was poured out and cooled. .
- the cooled product was pulverized with an alumina ball mill for 10 to 60 hours using water as a solvent, and classified to obtain glass powders G1 to G13 having respective compositions.
- a flat boehmite powder was produced from aluminum hydroxide by hydrothermal synthesis, and this boehmite powder was fired to obtain a flat alumina filler. That is, first, aluminum hydroxide, sodium hydroxide or calcium carbonate as a pH adjusting agent, and water were charged into an autoclave. Here, the pH was adjusted to 8 or more, and the mixing ratio of water was 5 times or more of the amount of aluminum hydroxide in mass ratio. The reaction was carried out at 150 to 200 ° C. under natural pressure for 2 to 10 hours. Thereafter, it was washed with water and filtered to obtain flat boehmite particles.
- the boehmite powder was fired at 800 to 1300 ° C., the average maximum length which is the average of the maximum length of the major axis is 2 to 3.5 ⁇ m, and the average length of the minor axis is 0.08 to 0.001.
- a flat alumina filler having an average cross-sectional particle aspect ratio (average maximum length / average length) of 25 to 50 and 2 ⁇ m was obtained.
- adjustment of average aspect ratio etc. was performed by adjustment of average aspect ratio etc. at the time of manufacture of flat boehmite powder.
- the ratio of the ceramic powder is expressed in mass% as the mixing ratio of the glass powder and the ceramic powder. Therefore, the ratio of the glass powder in each example is a value obtained by subtracting the mass% of the ceramic powder from 100 mass%.
- amorphous alumina filler an alumina powder having a 50% particle size (D 50 ) of 2 ⁇ m and a specific surface area of 4.5 m 2 / g (manufactured by Showa Denko KK, trade name: AL-45H) is used.
- a zirconia (ZrO 2 ) powder having a 50% particle size (D 50 ) of 0.5 ⁇ m and a specific surface area of 8.0 m 2 / g (trade name: HST-3F, manufactured by Daiichi Rare Element Chemical Co., Ltd.) was used.
- the flat mica filler mica powder having a 50% particle size (D 50 ) of 6.0 ⁇ m (trade name: PDM-5B, manufactured by Topy Industries, Ltd.) was used.
- this mixed powder glass ceramic composition
- 15 g of an organic solvent toluene, xylene, 2-propanol, 2-butanol mixed at a mass ratio of 4: 2: 2: 1
- a plasticizer di-phthalate
- 2-ethylhexyl polyvinyl butyral
- polyvinyl butyral trade name: PVK # 3000K, 5 g
- 0.5 g dispersant trade name: BYK180, 0.5 g
- the six green sheets were overlapped and integrated at 80 ° C. by applying a pressure of 10 MPa. Thereafter, the binder resin was decomposed and removed by holding it in a baking furnace at 550 ° C. for 5 hours, and then baking was carried out by holding at 870 ° C. for 1 hour. Thus, a glass ceramic body having a thickness of 500 ⁇ m was obtained. The glass ceramic body was measured for strength, water absorption, etc. as shown below. In addition, about this glass ceramic body, when the crystallinity degree of glass was investigated by X-ray diffraction, it was confirmed that none is crystallizing.
- the above-mentioned glass ceramic body was subjected to a three-point bending strength test based on JIS C2141. That is, one side of the glass ceramic body is supported at two points, and a load is gradually applied to an intermediate position between the two points on the opposite side to measure the load when the glass ceramic body is cut. Based on the above, the three-point bending strength (MPa) was calculated. The bending strength was measured at 30 points to determine an average value (average bending strength). The results are shown in Tables 3-5.
- a glass ceramic body for reflectance measurement for measuring the reflectance (hereinafter referred to as a reflectance measurement substrate) was produced. That is, the green sheets similar to those used for the production of the glass ceramic body described above were overlapped and integrated, and the film thickness after firing was 300 ⁇ m. Thereafter, the binder resin was decomposed / removed and baked under the same conditions as in the glass ceramic body described above to obtain a reflectance measurement substrate.
- the reflectance of the surface of this reflectance measurement substrate was measured.
- the reflectance was measured using a spectroscope USB2000 from Ocean Optics and a small integrating sphere ISP-RF as a reflectance (unit:%) at 460 nm.
- the results are shown in Tables 3-5.
- the area ratio of the flat alumina filler and the flat mica filler is such that, in the cross section of 100 ⁇ m 2 , the long diameter (length in the flat direction) is 0.5 to 20 ⁇ m, and the short diameter (length in the thickness direction) is 0.02 to It is calculated by measuring the area of a particle having a size of 0.25 ⁇ m.
- the occupied area per unit area of the flat filler having a major axis of 0.5 to 20 ⁇ m and a minor axis of 0.02 to 0.25 ⁇ m is 30.
- the substrates of Examples 1 to 19 which are ⁇ 48% a high reflectance of 83% or more was obtained, and a high average bending strength of 180 MPa or more was obtained. Further, with respect to the substrates of Examples 1 to 19, the absorptance was 1.5% or less, and the generation of holes in the substrate was suppressed.
- the water absorption is as high as 3.1% or more. It was confirmed that holes were generated in the substrate.
- the present invention in the cross section in the thickness direction, by containing a flat filler having a predetermined shape in an amount within a predetermined range, generation of pores on the surface and inside is suppressed, and a decrease in strength is suppressed. Therefore, it is possible to provide a glass ceramic body having a high reflectivity with few holes. In addition, by applying such a glass ceramic body, sufficient light emission brightness can be obtained, chipping when mounting the light emitting element and breakage when dividing are suppressed, and connection due to penetration of the plating solution into the substrate It is possible to provide a light-emitting element mounting substrate and a light-emitting device in which occurrence of defects such as defects is suppressed.
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Abstract
Description
また、発光素子の実装時に、基板にかかる応力による欠けや破断等を防止する必要があることから、所定の強度も求められる。
また、ガラスセラミックス基板については、各種特性のばらつき、例えば、反射率、強度等のばらつきを少なくする観点から、焼成時の収縮抑制も求められている。
このようなガラスセラミックス体を発光素子搭載用基板に用いた場合、発光素子の実装時に基板にかかる応力による欠けや、分割後の個片上での破断等が生じやすくなり、歩留まりの低下を招くおそれがある。
基板内に空孔が生じた場合、反射率が若干高まるものの、基板強度が低下し、またメッキ処理に用いるメッキ液が、空孔から基板内部に侵入しやすくなる。このため、発光素子搭載後において、接続不良等の不具合を生じ、信頼性が低下するおそれがある。
また、本発明は、このようなガラスセラミックス体を用いた発光素子搭載用基板、発光装置の提供を目的とする。
上記した数値範囲を示す「~」とは、その前後に記載された数値を下限値および上限値として含む意味で使用され、特段の定めがない限り、以下本明細書において「~」は、同様の意味をもって使用される。
また、このようなガラスセラミックス体を適用することで、十分な発光輝度を得られ、また発光素子搭載時における欠けや、分割時における破断を抑制され、さらに基板内へのメッキ液の侵入による接続不良等の不具合の発生が抑制された発光素子搭載用基板、発光装置とできる。
ガラスマトリックス11が結晶化していないとは、原料粉末としてのガラス粉末に由来するガラスから析出した結晶が存在しないことを意味する。ガラスマトリックス11が結晶化していないことの確認は、X線回折により行うことができる。この判定は、X線回折スペクトルにおけるアルミナ粒子等のセラミックス粒子に由来するピークの最高強度(絶対値)を100としたとき、絶対値が10以上の強度を有するガラス由来のピークが現出しないものを結晶化していないとする。
このため、扁平度の小さいセラミックス粒子が分散された基板と比べて、入射光がガラスとセラミックス粒子との界面に衝突する回数が増大する。界面に衝突した光は、ガラスとセラミックス粒子との屈折率の違いにより反射あるいは屈折を繰り返すため、基板を厚さ方向に透過して上方以外に漏れる(すなわち、出射する)光が低減される。したがって、基板の上方に戻る反射光量を増大させることができる。
扁平フィラー12の割合を30%以上とすることで、厚さ方向での扁平フィラー12の層数が増え、入射光がガラスマトリックス11と扁平フィラー12との界面に衝突する回数を増加させて高い反射率が得られるとともに、焼成収縮を抑制できる。
一方、扁平フィラー12の割合を48%以下とすることで、ガラスマトリックス11の割合が低下することによる焼結性の低下も抑制できる。扁平フィラー12の割合が48%を超えると、ガラスと扁平フィラー12との焼結性が低下し、基板の表面や内部に空孔が生じやすくなり、基板強度が低下する。
なお、扁平フィラー12の断面粒子アスペクト比は、短径に対する長径の割合であり、(長径/短径)で表わされる値である。扁平フィラー12の断面粒子アスペクト比が25~80であることが好ましい。
一般に、ZrO2フィラーは高屈折率を有するものの、ガラスとの焼結性に劣るため、これをガラスマトリックス11に配合した場合、ガラスとZrO2フィラーとの焼結不足により、基板の強度を低下したり、基板の内部に空孔を生じたりすることがある。
B2O3の含有量を10mol%以上とすることで、ガラスとZrO2フィラーとの焼結性が高められるため、セラミックス粒子としてZrO2フィラーを用いた場合でも、空孔の生成や強度の低下が生じ難いものとできる。
ガラスマトリックスのガラスの代表的な例として、酸化物基準表示でCaOを15~40mol%含有するSiO2-B2O3系ガラスが挙げられる。このガラスにおいて、SiO2は、38~60mol%であり、B2O3は、13~25mol%であるのが好ましい。
発光装置20は、少なくとも一部がガラスセラミックス体10からなる発光素子搭載用基板21を有する。基板21には、例えば2個の発光素子22が搭載され、ボンディングワイヤ23によって電気的に直列に接続されるとともに、これら発光素子22とボンディングワイヤ23とを覆うように封止層24が設けられて発光装置20とされる。
扁平フィラーの配合割合としては、ガラス粉末と扁平フィラーとの合計量に対して、扁平フィラーを35~60質量%、より好ましくは40~58質量%とすることが好ましい。
表2に示す割合のガラスとなるように各ガラス原料を配合、混合して原料混合物とし、この原料混合物を白金ルツボに入れて1200~1500℃で60分間溶融後、溶融物を流し出し冷却した。そして、冷却物をアルミナ製ボールミルにより水を溶媒として10~60時間粉砕し、分級して各組成のガラス粉末G1~G13を得た。
なお、平均アスペクト比等の調整は扁平状のベーマイト粉末の製造時の平均アスペクト比等の調整により行った。
不定形アルミナフィラーとしては、50%粒径(D50)が2μm、比表面積が4.5m2/gであるアルミナ粉末(昭和電工社製、商品名:AL-45H)を用い、不定形ジルコニアフィラーとしては、50%粒径(D50)が0.5μm、比表面積が8.0m2/gであるジルコニア(ZrO2)粉末(第一稀元素化学社製、商品名:HST-3F)を用いた。
扁平マイカフィラーとしては、50%粒径(D50)が6.0μmであるマイカ粉末(トピー工業製、商品名:PDM-5B)を用いた。
上記したガラスセラミックス体について、JIS C2141に準拠する3点曲げ強さ試験を行った。すなわち、ガラスセラミックス体の一辺を2点で支持し、これと対向する辺における上記2点の中間位置に徐々に加重を加えて、ガラスセラミックス体に切断が生じたときの荷重を測定し、これに基づいて3点曲げ強度(MPa)を算出した。当該曲げ強度を30点測定して平均値(平均曲げ強度)を求めた。結果を表3~5に示す。
上記したガラスセラミックス体について、JIS R 2205に準拠する吸水率測定を行った。すなわち、ガラスセラミックス体の乾燥質量、真空法による飽水基板の質量を測定し、これらに基づいて吸水率を算出した。結果を表3~5に示す。なお、吸水率の値が低いほど、開気孔が少ない。
この反射率測定用基板について表面の反射率を測定した。反射率の測定には、オーシャンオプティクス社の分光器USB2000と小型積分球ISP-RFを用い、460nmの反射率(単位:%)として算出した。結果を表3~5に示す。
上記したガラスセラミックス体を厚さ方向、かつドクターブレードの成形方向と略平行な方向に切断し、その断面を鏡面研磨した。走査型顕微鏡(SEM)、画像解析装置を用いて、断面100μm2における個々の粒子の長径および短径を測定し、それらを平均して粒子の長径の平均長さ、短径の平均長さを求めた。また、同断面における粒子の面積を測定し、単位面積当たりの粒子の面積割合を求めた。結果を表3~5に示す。
なお、扁平アルミナフィラー及び扁平マイカフィラーの面積比は、上記断面100μm2において、長径(扁平方向の長さ)が0.5~20μm、短径(厚さ方向の長さ)が0.02~0.25μmである粒子の面積を測定し、算出したものである。
一方、このような扁平状セラミックス粒子を、所定の断面において、その単位面積での占有面積が48%を超えて含有する例20、21の基板では、吸水率が3.1%以上と高くなっており、基板に空孔が生成していることが認められた。
また、このようなガラスセラミックス体を適用することで、十分な発光輝度を得られ、また発光素子搭載時における欠けや、分割時における破断を抑制され、さらに基板内へのメッキ液の侵入による接続不良等の不具合の発生が抑制された発光素子搭載用基板、また発光装置を提供することができる。
なお、2011年8月8日に出願された日本特許出願2011-172889号の明細書、特許請求の範囲、図面および要約書の全内容をここに引用し、本発明の開示として取り入れるものである。
Claims (11)
- ガラスマトリックス中に扁平フィラーが分散されたガラスセラミックス体であって、
前記扁平フィラーは、個々の厚さ方向が略同一方向となるように前記ガラスマトリックス中に分散されており、
前記ガラスセラミックス体における前記扁平フィラーの厚さ方向に沿った断面において、前記扁平フィラーの扁平方向の長さが0.5~20μm、かつ前記扁平フィラーの厚さ方向の長さが0.02~0.25μmである扁平フィラーの占有面積が当該断面の単位面積当たり30~48%であることを特徴とするガラスセラミックス体。 - 前記ガラスセラミックス体は、前記ガラスマトリックスが結晶化していない請求項1に記載のガラスセラミックス体。
- 前記扁平フィラーの占有面積のうち、平均断面粒子アスペクト比が25以上である扁平フィラーの占有面積が30~48%である請求項1又は2に記載のガラスセラミックス体。
- 前記扁平フィラーの占有面積のうち、平均断面粒子アスペクト比が25~80である扁平フィラーの占有面積が30~48%である請求項1乃至3のいずれか1項に記載のガラスセラミックス体。
- 前記扁平フィラーは、アルミナ、マイカ、シリカ、および窒化ホウ素からなる群より選ばれる少なくとも一種からなる請求項1乃至4のいずれか1項に記載のガラスセラミックス体。
- 前記ガラスセラミックス体は、厚み300μmの平板状としたときの波長460nmでの反射率が83%以上である請求項1乃至5のいずれか1項に記載のガラスセラミックス体。
- 前記ガラスセラミックス体の曲げ強度が180MPa以上である請求項1乃至6のいずれか1項に記載のガラスセラミックス体。
- 前記ガラスマトリックスは、酸化物基準表示でCaOを15~40mol%含有するSiO2-B2O3系ガラスからなる請求項1乃至7のいずれか1項に記載のガラスセラミックス体。
- 前記ガラスセラミックス体は、ZrO2粒子を含有しており、厚み300μmの平板状としたときの波長460nmでの反射率が90%以上であり、曲げ強度が180MPa以上である請求項1乃至8のいずれか1項に記載のガラスセラミックス体。
- 発光素子を搭載するための発光素子搭載用基板であって、
請求項1乃至9のいずれか1項に記載のガラスセラミックス体を有することを特徴とする発光素子搭載用基板。 - 請求項10に記載の発光素子搭載用基板と、
前記発光素子搭載用基板に搭載された発光素子と
を有することを特徴とする発光装置。
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JP2015106633A (ja) * | 2013-11-29 | 2015-06-08 | 京セラ株式会社 | 発光素子実装用基板およびこれを用いた発光素子モジュール |
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JP2018131353A (ja) * | 2017-02-15 | 2018-08-23 | Tdk株式会社 | ガラスセラミックス焼結体およびコイル電子部品 |
JP2019116409A (ja) * | 2017-12-27 | 2019-07-18 | Tdk株式会社 | ガラスセラミックス焼結体およびコイル電子部品 |
JPWO2021256409A1 (ja) * | 2020-06-17 | 2021-12-23 | ||
WO2021256409A1 (ja) * | 2020-06-17 | 2021-12-23 | 株式会社村田製作所 | ガラスセラミックス及び積層セラミック電子部品 |
JP7494908B2 (ja) | 2020-06-17 | 2024-06-04 | 株式会社村田製作所 | ガラスセラミックス及び積層セラミック電子部品 |
WO2022071230A1 (ja) * | 2020-09-30 | 2022-04-07 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2022058212A (ja) * | 2020-09-30 | 2022-04-11 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2023050105A (ja) * | 2021-09-29 | 2023-04-10 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP7401809B2 (ja) | 2021-09-29 | 2023-12-20 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP7510097B2 (ja) | 2021-09-29 | 2024-07-03 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Also Published As
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JP5928468B2 (ja) | 2016-06-01 |
US9175834B2 (en) | 2015-11-03 |
TW201315706A (zh) | 2013-04-16 |
CN103733361A (zh) | 2014-04-16 |
JPWO2013021921A1 (ja) | 2015-03-05 |
US20140153262A1 (en) | 2014-06-05 |
KR20140050654A (ko) | 2014-04-29 |
TWI560167B (ja) | 2016-12-01 |
CN103733361B (zh) | 2016-06-29 |
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