WO2013021454A1 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- WO2013021454A1 WO2013021454A1 PCT/JP2011/068100 JP2011068100W WO2013021454A1 WO 2013021454 A1 WO2013021454 A1 WO 2013021454A1 JP 2011068100 W JP2011068100 W JP 2011068100W WO 2013021454 A1 WO2013021454 A1 WO 2013021454A1
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- WO
- WIPO (PCT)
- Prior art keywords
- heat treatment
- temperature
- heating element
- treatment apparatus
- heating
- Prior art date
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Definitions
- the present invention relates to a heat treatment apparatus useful for heat treatment after ion implantation of a SiC substrate.
- Activating heat treatment after ion implantation in a SiC substrate requires a temperature of 1600-1900 ° C.
- the impurities are activated without giving the transfer time to the atoms, it is necessary to perform the activation heat treatment in a short time, and further suppress the variation in the temperature distribution in the heat treatment surface and improve the mass productivity. Desired.
- a heat treatment apparatus in which a substrate is held in a cylindrical body formed of a high melting point material, and the cylindrical body is heated at a high frequency with an RF coil to generate a high temperature region in the cylindrical body.
- Patent Document 1 a temperature increase rate of 20 to 30 ° C. per minute, which is about 2 to 3 times that of heating by an infrared lamp, can be obtained, and variation in in-plane temperature can be suppressed.
- the number of substrates that can be heat-treated at a time is limited to 4 to 8 due to the structure of the jig that holds the substrate in a high temperature region, so that the mass productivity of the processed substrate is poor.
- the temperature control in the heat treatment apparatus is often performed by measuring the temperature of the substrate with a radiation thermometer.
- the radiation thermometer has different emissivities of thermal radiation depending on the substance to be measured.
- the calibration curve must be obtained by another temperature measurement method, which is complicated.
- the radiation thermometer is greatly affected by the surface condition of the measurement object, and it is difficult to accurately measure the temperature even if the measurement port is contaminated.
- thermocouple thermometer instead of a radiation thermometer, but if a thermocouple thermometer is used in a high-frequency heating device, the temperature can be accurately measured by induction self-heating or noise. Can not. Therefore, when the heating method is changed from high-frequency heating to resistance heating, the problem of self-heating is solved, but in the activation heat treatment after ion implantation, the temperature rising rate and the falling rate are large. When a thermocouple thermometer using an iridium rhodium alloy is used, the thermocouple is broken and cut by the grain boundary.
- the present invention provides a heating means that enables a rapid temperature rise to a temperature of 1600-1900 ° C and accurate temperature measurement even when repeated rapid temperature rise and drop.
- An object of the present invention is to provide a heat treatment apparatus that includes a thermometer that can perform heat treatment, can perform heat treatment after ion implantation of a SiC substrate with high productivity, and has a large number of substrates that can be heat treated at a time.
- the present inventor assumes that the heating method in the heat treatment apparatus is resistance heating, and in using a thermocouple thermometer for temperature control, when the main component of each constituent metal of the heating element and thermocouple responsible for resistance heating is shared, Since the atmosphere suitable for the same temperature is common, it has been found that it is easy to set the optimum heat treatment conditions when repeating the rapid rise and fall in temperature, and that a heat treatment apparatus capable of maintaining accurate heat control can be constructed.
- the present invention is a semiconductor substrate heat treatment apparatus capable of heat treatment at 1600 to 1900 ° C. by temperature control using a resistance heating element and a thermocouple thermometer.
- a heat treatment apparatus having a common metal main component is provided.
- the temperature of the heat treatment of the substrate is controlled using a resistance heating element that performs resistance heating and a thermocouple thermometer that shares the main component with the resistance heating element.
- a rapid temperature rise to 0 ° C. is possible, and even if a rapid temperature rise and a temperature drop are repeated, the temperature of the heat treatment can be accurately controlled. For this reason, the heat treatment after ion implantation of the SiC substrate can be satisfactorily performed.
- the heat treatment of the substrate can be performed with high productivity.
- FIG. 1 is a longitudinal sectional view of a heat treatment apparatus according to an embodiment.
- FIG. 2 is an XX cross-sectional view of the heat treatment apparatus of the example.
- FIG. 3 is a diagram showing a temperature change in the heat treatment.
- FIG. 1 is a longitudinal sectional view of a heat treatment apparatus 1 according to an embodiment of the present invention
- FIG. 2 is an XX sectional view thereof.
- This heat treatment apparatus 1 is an apparatus for performing activation treatment after ion implantation on a SiC substrate 2, and is a vertical boat 3 on which 20 or more SiC substrates 2 can be placed simultaneously, a high melting point material (for example, SiC) ) Formed in a tube-type container (hereinafter referred to as SiC tube) 4, a transfer device 6 for inserting or withdrawing the boat 3 into and from the heating chamber 5 formed in the upper region in the SiC tube 4, and surrounding the heating chamber 5.
- a second thermocouple thermometer 8b is provided. The outside of the resistance heating element 7 arranged in a cylindrical shape is surrounded by a reflector 11 made of a tungsten-molybdenum alloy.
- the resistance heating element 7 three plate-type heating elements bent on three surfaces are used, and these three bent plate-type heating elements 7 a, 7 b, 7 c serve as the heating chamber 5.
- a cylindrical shape is formed surrounding the outer periphery of the SiC tube 4 to be formed.
- the cross-section of the cylindrical body has a substantially regular dodecagon, and nine bent plate-type heating elements 7a, 7b, 7c occupy nine sides of the substantially regular dodecagon. Yes.
- three heater electrodes 9 and their introduction pipes 10 are provided corresponding to the three bent plate-type heating elements 7a, 7b, 7c.
- a circle is formed by the heating elements in the cross section from the viewpoint of the uniform temperature of the cross section of the heating chamber 5, for example,
- the plate-type heating element so that a regular polygon having 6 or more sides is formed on the SiC tube 4 having an outer diameter of 145 mm or more, more preferably 145 to 185 mm, the cross section is sufficiently uniform. Thermal properties can be ensured.
- the individual plate-type heating elements may be arranged with a gap between them. If there are too many regions where there is no heating element, the temperature of the heating chamber 5 cannot be rapidly raised to 1600-1900 ° C. Therefore, for example, when a regular polygon having 12 or more sides is formed by a plurality of plate-type heating elements, it is preferable that 3/4 or more of the number of sides is occupied by the heating elements. Therefore, the resistance heating element 7 of the present embodiment, which uses three bent plate heating elements 7a, 7b, and 7c each having a continuous three rectangular surfaces to form a substantially regular dodecagon, The soaking property of the chamber 5 is excellent.
- the plate-type heating elements are arranged so as to form a cylindrical shape having a polygonal cross section, a bent plate in which a plurality of adjacent surfaces, more preferably 2 to 4 side surfaces, are continuous is provided.
- the use of the mold heating element is more preferable because the total number of heating elements can be reduced and the manufacturing cost of the heating element can be reduced.
- a resistance heating element made of tungsten a conventional resistance heating element formed into a cylindrical shape with a mesh is known, but a bent plate type heating element is arranged in a cylindrical shape as in this embodiment. By using a heating element, the processing cost of the heating element can be reduced by 15 to 20%.
- this heat treatment apparatus 1 includes a tungsten rhenium alloy thermocouple having a main component in common with the plate-type heating elements 7a, 7b, and 7c as the first thermocouple thermometer 8a and the second thermocouple thermometer 8b. (Rhenium 5%, 26%). Therefore, the heat treatment apparatus 1 can be used at a high temperature in a reducing atmosphere. Moreover, according to this heat treatment apparatus 1, since heating control is performed by resistance heating and a thermocouple thermometer regardless of high-frequency heating, heating accuracy within ⁇ 1 ° C with respect to 1900 ° C is achieved even if repeated heat treatment is performed. Can be maintained. When the heating chamber is heated by a combination of conventional high-frequency heating and a radiation thermometer, there is an error of about ⁇ 10 ° C. Therefore, according to the heat treatment apparatus 1 of this embodiment, the temperature control accuracy is greatly improved. You can see that
- the heat treatment apparatus 1 includes a gas introduction pipe 12 for introducing an inert gas such as argon and nitrogen into a SiC tube 4 forming a heating chamber 5 and a gas for exhausting from the SiC tube 4 as atmosphere adjusting means.
- the exhaust pipe 13 is provided, and the lower part of the SiC tube 4 is closed by a quartz plate 16 through an O-ring 15.
- a dummy plate 14 is placed below the heating chamber 5 in the SiC tube 4 in order to keep the heating chamber 5 warm, and further, water passes through the lower region to cool the SiC tube 4.
- a stainless steel water cooling tube 18 is provided outside the reflector 11.
- This heat treatment apparatus 1 is used as follows.
- the substrate 2 placed on the boat 3 at a temperature of 300 ° C. or less in the heating chamber 5 is inserted into the heating chamber 5 by moving the transfer device 6, and an inert gas such as argon is passed through the gas introduction pipe 12 through the SiC tube 4.
- oxygen and moisture are exhausted from the lower end of the SiC tube 4 through the gas exhaust pipe 13.
- rapid heating is performed by the resistance heating element 7 to raise the temperature in the heating chamber 5 to 1600 ° C. or more, and the heat treatment is completed in a few minutes, and the heating chamber 5 is cooled.
- FIG. 3 is an example of temperature changes inside and outside the heating chamber 5 in this case.
- this heating apparatus a rapid temperature increase of 100 ° C./min or more, preferably 200 ° C./min or more is possible. Therefore, the thermal activation process after ion implantation can be performed without diffusing impurities in the substrate.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Resistance Heating (AREA)
Abstract
Description
加えて、一度の熱処理で数十枚の基板を処理することができるので、基板の熱処理を量産性よく行うことができる。
図1は、本発明の一実施例の熱処理装置1の縦断面図であり、図2はそのX-X断面図である。
加熱室5の温度300℃以下で、ボート3に載置した基板2を、搬送装置6を動かすことにより加熱室5内に挿入し、アルゴン等の不活性ガスをガス導入管12を通してSiCチューブ4の上端部から導入し、酸素、水分をSiCチューブ4の下端部からガス排気管13を通して排気する。次に、抵抗発熱体7によって急速加熱し、加熱室5内を1600℃以上に昇温させ、数分間おいて熱処理を完了し、加熱室5を冷却する。図3は、この場合の加熱室5の内側と外側の温度変化の一例である。このようにこの加熱装置によれば、毎分100℃以上、好ましくは毎分200℃以上という急速な温度上昇が可能となる。したがって、基板内の不純物を拡散させることなく、イオン注入後の熱活性化処理を行うことができる。
2 基板
3 ボート
4 SiCチューブ
5 加熱室
6 搬送装置
7 抵抗発熱体
7a、7b、7c プレート型発熱体
8a、8b 熱電対温度計
9 ヒータ電極
10 ヒータ電極導入管
11 反射板
12 ガス導入管
13 ガス排気管
14 ダミープレート
15 オーリング
16 石英板
17 サブチャンバー
18 水冷管
Claims (5)
- 抵抗発熱体と熱電対温度計を用いた温度制御により1600~1900℃の熱処理を可能とする半導体基板の熱処理装置であって、抵抗発熱体と熱電対温度計との構成金属の主成分が共通である熱処理装置。
- 毎分100℃以上の温度上昇を可能とする請求項1記載の熱処理装置。
- 複数の面を有する屈曲したプレート型金属発熱体が筒型に配置され、その内側に高融点材料で形成された加熱室を有する請求項1又は2記載の熱処理装置。
- 屈曲したプレート型金属発熱体が3面に屈曲している請求項3記載の熱処理装置。
- 加熱室がSiCチューブで形成されている請求項3記載の熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/236,161 US10237915B2 (en) | 2011-08-09 | 2011-08-09 | Heat treatment apparatus |
JP2013527775A JP5733399B2 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
EP11870675.3A EP2743971B1 (en) | 2011-08-09 | 2011-08-09 | Heat treatment apparatus |
PCT/JP2011/068100 WO2013021454A1 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
US16/263,455 US11291083B2 (en) | 2011-08-09 | 2019-01-31 | Heat treatment apparatus |
Applications Claiming Priority (1)
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PCT/JP2011/068100 WO2013021454A1 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
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Application Number | Title | Priority Date | Filing Date |
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US14/236,161 A-371-Of-International US10237915B2 (en) | 2011-08-09 | 2011-08-09 | Heat treatment apparatus |
US16/263,455 Continuation US11291083B2 (en) | 2011-08-09 | 2019-01-31 | Heat treatment apparatus |
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WO2013021454A1 true WO2013021454A1 (ja) | 2013-02-14 |
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PCT/JP2011/068100 WO2013021454A1 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
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US (2) | US10237915B2 (ja) |
EP (1) | EP2743971B1 (ja) |
JP (1) | JP5733399B2 (ja) |
WO (1) | WO2013021454A1 (ja) |
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2011
- 2011-08-09 US US14/236,161 patent/US10237915B2/en active Active
- 2011-08-09 EP EP11870675.3A patent/EP2743971B1/en active Active
- 2011-08-09 JP JP2013527775A patent/JP5733399B2/ja active Active
- 2011-08-09 WO PCT/JP2011/068100 patent/WO2013021454A1/ja active Application Filing
-
2019
- 2019-01-31 US US16/263,455 patent/US11291083B2/en active Active
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JPS6435909A (en) * | 1987-07-30 | 1989-02-07 | Sony Corp | Barrel type vapor growth device |
JPH04245510A (ja) * | 1991-01-31 | 1992-09-02 | Nec Corp | 高温水素炉 |
JP2000286331A (ja) * | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2001007035A (ja) * | 1999-06-23 | 2001-01-12 | Sukegawa Electric Co Ltd | 縦型加熱装置 |
JP2003077855A (ja) | 2001-08-31 | 2003-03-14 | Denso Corp | 熱処理装置、熱処理方法 |
JP2005019725A (ja) * | 2003-06-26 | 2005-01-20 | Shinku Jikkenshitsu:Kk | アニール装置及びアニール方法 |
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See also references of EP2743971A4 |
Also Published As
Publication number | Publication date |
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US11291083B2 (en) | 2022-03-29 |
JPWO2013021454A1 (ja) | 2015-03-05 |
JP5733399B2 (ja) | 2015-06-10 |
EP2743971A1 (en) | 2014-06-18 |
US20190166652A1 (en) | 2019-05-30 |
EP2743971B1 (en) | 2019-06-26 |
US10237915B2 (en) | 2019-03-19 |
EP2743971A4 (en) | 2015-03-11 |
US20140166637A1 (en) | 2014-06-19 |
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