JPWO2013021454A1 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JPWO2013021454A1 JPWO2013021454A1 JP2013527775A JP2013527775A JPWO2013021454A1 JP WO2013021454 A1 JPWO2013021454 A1 JP WO2013021454A1 JP 2013527775 A JP2013527775 A JP 2013527775A JP 2013527775 A JP2013527775 A JP 2013527775A JP WO2013021454 A1 JPWO2013021454 A1 JP WO2013021454A1
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- Prior art keywords
- heat treatment
- treatment apparatus
- heating element
- temperature
- heating
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 abstract description 8
- 239000000470 constituent Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000691 Re alloy Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- SXRIPRHXGZHSNU-UHFFFAOYSA-N iridium rhodium Chemical compound [Rh].[Ir] SXRIPRHXGZHSNU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Resistance Heating (AREA)
Abstract
Description
加えて、一度の熱処理で数十枚の基板を処理することができるので、基板の熱処理を量産性よく行うことができる。
図1は、本発明の一実施例の熱処理装置1の縦断面図であり、図2はそのX−X断面図である。
加熱室5の温度300℃以下で、ボート3に載置した基板2を、搬送装置6を動かすことにより加熱室5内に挿入し、アルゴン等の不活性ガスをガス導入管12を通してSiCチューブ4の上端部から導入し、酸素、水分をSiCチューブ4の下端部からガス排気管13を通して排気する。次に、抵抗発熱体7によって急速加熱し、加熱室5内を1600℃以上に昇温させ、数分間おいて熱処理を完了し、加熱室5を冷却する。図3は、この場合の加熱室5の内側と外側の温度変化の一例である。このようにこの加熱装置によれば、毎分100℃以上、好ましくは毎分200℃以上という急速な温度上昇が可能となる。したがって、基板内の不純物を拡散させることなく、イオン注入後の熱活性化処理を行うことができる。
2 基板
3 ボート
4 SiCチューブ
5 加熱室
6 搬送装置
7 抵抗発熱体
7a、7b、7c プレート型発熱体
8a、8b 熱電対温度計
9 ヒータ電極
10 ヒータ電極導入管
11 反射板
12 ガス導入管
13 ガス排気管
14 ダミープレート
15 オーリング
16 石英板
17 サブチャンバー
18 水冷管
Claims (5)
- 抵抗発熱体と熱電対温度計を用いた温度制御により1600〜1900℃の熱処理を可能とする半導体基板の熱処理装置であって、抵抗発熱体と熱電対温度計との構成金属の主成分が共通である熱処理装置。
- 毎分100℃以上の温度上昇を可能とする請求項1記載の熱処理装置。
- 複数の面を有する屈曲したプレート型金属発熱体が筒型に配置され、その内側に高融点材料で形成された加熱室を有する請求項1又は2記載の熱処理装置。
- 屈曲したプレート型金属発熱体が3面に屈曲している請求項3記載の熱処理装置。
- 加熱室がSiCチューブで形成されている請求項3記載の熱処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/068100 WO2013021454A1 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013021454A1 true JPWO2013021454A1 (ja) | 2015-03-05 |
JP5733399B2 JP5733399B2 (ja) | 2015-06-10 |
Family
ID=47668007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013527775A Active JP5733399B2 (ja) | 2011-08-09 | 2011-08-09 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10237915B2 (ja) |
EP (1) | EP2743971B1 (ja) |
JP (1) | JP5733399B2 (ja) |
WO (1) | WO2013021454A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435909A (en) * | 1987-07-30 | 1989-02-07 | Sony Corp | Barrel type vapor growth device |
JPH04245510A (ja) * | 1991-01-31 | 1992-09-02 | Nec Corp | 高温水素炉 |
JP2000286331A (ja) * | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2005019725A (ja) * | 2003-06-26 | 2005-01-20 | Shinku Jikkenshitsu:Kk | アニール装置及びアニール方法 |
JP2009007193A (ja) * | 2007-06-27 | 2009-01-15 | Kwansei Gakuin | 熱処理装置及び熱処理方法 |
JP2009124005A (ja) * | 2007-11-16 | 2009-06-04 | Sukegawa Electric Co Ltd | 均熱高速昇降炉 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2897335A (en) * | 1958-06-23 | 1959-07-28 | Gen Electric | Temperature controlled soldering iron |
US5536918A (en) | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
JP3471100B2 (ja) * | 1994-11-07 | 2003-11-25 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US5947718A (en) * | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
US6462310B1 (en) * | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
JP3892609B2 (ja) * | 1999-02-16 | 2007-03-14 | 株式会社東芝 | ホットプレートおよび半導体装置の製造方法 |
JP3100376B1 (ja) | 1999-06-23 | 2000-10-16 | 助川電気工業株式会社 | 縦型加熱装置 |
US6246031B1 (en) * | 1999-11-30 | 2001-06-12 | Wafermasters, Inc. | Mini batch furnace |
JP4894111B2 (ja) | 2001-08-31 | 2012-03-14 | 株式会社デンソー | 熱処理装置 |
US6692249B1 (en) * | 2003-01-06 | 2004-02-17 | Texas Instruments Incorporated | Hot liner insertion/removal fixture |
US20070137794A1 (en) * | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
US20060057287A1 (en) * | 2003-12-08 | 2006-03-16 | Incomplete Trex Enterprises Corp | Method of making chemical vapor composites |
US7205231B2 (en) * | 2004-10-29 | 2007-04-17 | Axcelis Technologies, Inc. | Method for in-situ uniformity optimization in a rapid thermal processing system |
JP2007033154A (ja) * | 2005-07-25 | 2007-02-08 | Denso Corp | 赤外線検出器 |
US20100124613A1 (en) * | 2008-11-19 | 2010-05-20 | Remco Van Den Berg | Heater integrated thermocouple |
US8866271B2 (en) * | 2010-10-07 | 2014-10-21 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device |
-
2011
- 2011-08-09 JP JP2013527775A patent/JP5733399B2/ja active Active
- 2011-08-09 US US14/236,161 patent/US10237915B2/en active Active
- 2011-08-09 WO PCT/JP2011/068100 patent/WO2013021454A1/ja active Application Filing
- 2011-08-09 EP EP11870675.3A patent/EP2743971B1/en active Active
-
2019
- 2019-01-31 US US16/263,455 patent/US11291083B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435909A (en) * | 1987-07-30 | 1989-02-07 | Sony Corp | Barrel type vapor growth device |
JPH04245510A (ja) * | 1991-01-31 | 1992-09-02 | Nec Corp | 高温水素炉 |
JP2000286331A (ja) * | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2005019725A (ja) * | 2003-06-26 | 2005-01-20 | Shinku Jikkenshitsu:Kk | アニール装置及びアニール方法 |
JP2009007193A (ja) * | 2007-06-27 | 2009-01-15 | Kwansei Gakuin | 熱処理装置及び熱処理方法 |
JP2009124005A (ja) * | 2007-11-16 | 2009-06-04 | Sukegawa Electric Co Ltd | 均熱高速昇降炉 |
Also Published As
Publication number | Publication date |
---|---|
EP2743971B1 (en) | 2019-06-26 |
WO2013021454A1 (ja) | 2013-02-14 |
US20190166652A1 (en) | 2019-05-30 |
EP2743971A1 (en) | 2014-06-18 |
US11291083B2 (en) | 2022-03-29 |
US20140166637A1 (en) | 2014-06-19 |
EP2743971A4 (en) | 2015-03-11 |
US10237915B2 (en) | 2019-03-19 |
JP5733399B2 (ja) | 2015-06-10 |
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