WO2013016942A1 - 多腔室半导体处理装置 - Google Patents

多腔室半导体处理装置 Download PDF

Info

Publication number
WO2013016942A1
WO2013016942A1 PCT/CN2011/085095 CN2011085095W WO2013016942A1 WO 2013016942 A1 WO2013016942 A1 WO 2013016942A1 CN 2011085095 W CN2011085095 W CN 2011085095W WO 2013016942 A1 WO2013016942 A1 WO 2013016942A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
chamber portion
microchamber
driving device
processing apparatus
Prior art date
Application number
PCT/CN2011/085095
Other languages
English (en)
French (fr)
Inventor
温子瑛
Original Assignee
无锡华瑛微电子技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 无锡华瑛微电子技术有限公司 filed Critical 无锡华瑛微电子技术有限公司
Priority to EP11870218.2A priority Critical patent/EP2738789B1/en
Priority to US14/234,215 priority patent/US9859134B2/en
Publication of WO2013016942A1 publication Critical patent/WO2013016942A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • This invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, and more particularly to a multi-chamber semiconductor processing apparatus for chemically processing semiconductor wafer surfaces, as well as cleaning, etching, and other processing.
  • BACKGROUND OF THE INVENTION In the process of semiconductor integrated circuit fabrication, nearly 100 steps are associated with wafer surface cleaning and chemical processing, which account for 25% to 35% of the total production process steps. Nearly 70% of the wafer surface chemical processing and cleaning equipment used in the integrated circuit manufacturing industry is still the traditional batch processing cleaning equipment and RCA cleaning method.
  • the multi-chamber semiconductor Processing means having a plurality of longitudinally distributed on the uprights 2 micro chambers, each chamber may simultaneously micro plurality of semiconductor wafers for single-wafer chemical treatment, respectively.
  • a multi-chamber semiconductor processing apparatus includes: a microchamber including at least two semiconductor wafers for accommodating and processing semiconductor wafers, each microcavity including an upper working surface a chamber portion and a lower chamber portion forming a lower working surface, the upper chamber portion and the lower chamber portion being in an open position for loading or removing the semiconductor wafer and a receiving and processing semiconductor a relative movement between the closed positions of the wafer, wherein the semiconductor wafer is disposed between the upper working surface and the lower working surface, and a gap for the flow of the processing fluid is formed with the inner wall of the micro-chamber,
  • the microchamber includes at least one inlet for processing fluid to enter the microchamber and at least one outlet for processing fluid to exit the microchamber.
  • the multi-chamber semiconductor processing apparatus further includes a driving device, and an upper chamber portion or a lower chamber portion of the at least one micro-chamber is driven to be driven by the driving device, the upper chamber portion and the lower chamber
  • the other one of the sections is fixed at a predetermined position.
  • the multi-chamber semiconductor processing apparatus further includes a post penetrating the upper chamber portion and the lower chamber portion of each microcavity, the upper chamber portion and the lower chamber portion being along the column The open position and the closed position move relatively.
  • the multi-chamber semiconductor processing apparatus further includes a driving device located below the lower chamber portion of the lowermost micro-chamber or/and a driving device above the upper chamber portion of the uppermost micro-chamber,
  • the driving device drives the corresponding chamber portion in the longitudinal direction
  • the upper chamber portion and the lower chamber portion of each micro chamber further include a retractable micro-driving member, and the upper chamber of each micro-chamber The lower portion and the lower chamber portion are driven to move upward or downward along the guide of the column under the driving force provided by the micro-driving member and the driving device.
  • the micro-driving component is a helical tension spring that is sleeved on the column, and the spring coefficient of the helical tension spring between the upper chamber portion and the lower chamber portion of the lower micro-chamber A spring coefficient greater than a helical tension spring between the upper chamber portion and the lower chamber portion of the upper microchamber.
  • the lower chamber portion of the microchamber located vertically above and the upper chamber portion of the microchamber located below the longitudinal direction are fixed or integrally formed with each other.
  • the multi-chamber semiconductor processing apparatus further includes a driving device located below the lower chamber portion of the lowermost micro-chamber or a driving device above the upper chamber portion of the uppermost micro-chamber, all The upper chamber portion of the microchamber is fixedly connected and the lower chamber portions of all the micro chambers are fixedly connected, when driving When the lower chamber portion of the microchamber located at the lowermost side is moved upward, the lower chamber portion of all the micro chambers moves upward; when the driving device drives the upper chamber portion of the uppermost micro chamber to move downward At the time, the upper chamber portions of all the microchambers are moved downward under the guidance of the uprights.
  • the upper chamber portions of all the microchambers are fixed to the plurality of first sleeves; the lower chamber portions of all the microchambers are fixed to the plurality of second sleeves, each of the first sleeves And a second sleeve is respectively sleeved on the column and movable up or down along the column.
  • first sleeve and the second sleeve comprise threads, and the first sleeve and the second sleeve are selectively penetrated through the edge of the upper chamber portion or the lower chamber portion. Secured by a nut corresponding to the thread.
  • the driving device includes a top cover and a bottom cover, the top cover and the bottom cover respectively comprise a correspondingly shaped substrate portion, and the base portion of the top cover extends downwardly with a top side wall.
  • the substrate portion of the bottom cover extends upwardly with a bottom sidewall, and the substrate portion, the top sidewall of the top cover, and the cavity defined by the substrate portion and the bottom sidewall of the bottom cover comprise a fluid drive a device, the fluid driving device is connected to the substrate portion, one of the top cover or the bottom cover is fixed to a predetermined position of the column, and the other of the top cover or the bottom cover
  • the chamber portion of the adjacent microchamber is fixedly connected or integrally formed, and the one of the top cover and the bottom cover that is not fixed to the column is driven by expansion and contraction of the fluid drive device And a chamber portion adjacent thereto moves along the column.
  • the multi-chamber semiconductor processing apparatus further includes a processing fluid supply device and a processing fluid collection device.
  • the treatment fluid supply means is coupled to an inlet for the treatment fluid to enter the microchamber for providing a treatment fluid.
  • the treatment fluid collection device is coupled to an outlet for the treatment fluid to exit the microchamber for collecting waste fluid after processing the fluid processing semiconductor wafer, wherein the treatment fluid comprises a chemical and a gas.
  • the multi-chamber semiconductor processing apparatus of the present invention employs a column guiding structure, and a plurality of micro-chambers are longitudinally disposed on the column.
  • the semiconductor processing apparatus is capable of performing a single wafer chemical process on a plurality of semiconductor wafers simultaneously.
  • Figure 1 is a perspective view of the microchamber of the present invention in one embodiment
  • Figure 2 is a perspective view of the driving device of the present invention in one embodiment
  • FIG. 3 is a perspective view of the multi-chamber semiconductor processing apparatus of the present invention in an open position in one embodiment
  • FIG. 4 is a perspective view of the multi-chamber semiconductor processing apparatus of the present invention in a closed position in one embodiment
  • Figure 5 is a perspective view showing the multi-chamber semiconductor processing apparatus of the present invention in an open position in another embodiment
  • Figure 6 is a perspective view showing the multi-chamber semiconductor processing apparatus of the present invention in a closed position in another embodiment
  • Figure 7A is a perspective view showing the multi-chamber semiconductor processing apparatus of the present invention in a closed position in still another embodiment
  • Figure 7B is an exploded perspective view showing the upper chamber kit and the second upper driving device of the present invention in still another embodiment
  • Figure 7C is a schematic view showing the assembly of the lower chamber kit, the third lower driving device and the column in still another embodiment of the present invention.
  • Figure 8 is a cross-sectional view of the microchamber of the present invention in one embodiment. The present invention will be further described in detail with reference to the drawings and specific embodiments.
  • microchamber as one of the core components of the multi-chamber semiconductor processing apparatus will first be described.
  • the microchamber is used to house and process semiconductor wafers.
  • the microchamber 100 includes an upper chamber portion 120 and a lower chamber portion 140.
  • the upper chamber portion 120 includes a rectangular substrate portion and an upper working surface and an upper portion extending downward from the rectangular substrate portion. a peripheral portion, the lower chamber portion 140 also includes a rectangular substrate portion extending upward from the rectangular substrate portion to form a lower working surface and a lower peripheral portion, the upper working surface, the upper peripheral portion, the lower peripheral portion, and the lower portion
  • the working surface is surrounded by a cavity for receiving and processing the semiconductor wafer.
  • the upper chamber portion 120 and the lower chamber portion 140 may be varied between a closed position and an open position by the guide of a post (not shown).
  • the upper chamber portion 120 and the lower chamber when in the open position The chamber portions 140 are separated from each other to facilitate loading and removing semiconductor wafers to be processed or have been processed in the microchamber; when in the closed position, the upper chamber portion 120 and the lower chamber
  • the chamber portion 140 corresponds to a close fit, and the upper working surface, the upper peripheral portion, the lower peripheral portion, and the lower working surface surround the cavity in which the semiconductor wafer is accommodated.
  • a driving device which is one of the other core components of the multi-chamber semiconductor processing apparatus will be described below.
  • the driving device is disposed above the upper chamber portion or below the lower chamber portion for driving the upper chamber portion or the lower chamber portion to move up and down along the guide of the column.
  • the driving device 200 includes a top cover 220 and a bottom cover 240.
  • the top cover 220 and the bottom cover 240 respectively include a correspondingly shaped substrate portion, and the base portion 222 of the top cover 220 extends downward.
  • a top sidewall 224, the bottom plate 242 of the bottom cover 240 extends upwardly with a bottom sidewall 244, a substrate portion 222 of the top cover 220, a top sidewall 224, and a substrate portion 242 of the bottom cover 240,
  • the cavity enclosed by the bottom side wall 244 includes a fluid drive 260, which may be an air pocket.
  • the fluid drive unit 260 is in tight and fixed connection with the top cover 220 and the base portion of the bottom cover 240.
  • the top cover 220 and the top cover 220 can be driven by expansion and contraction of the fluid driving device 260.
  • the one of the bottom cover 240 that is not fixed to the upright and the component connected thereto moves along the upright.
  • the substrate portion is not necessarily rectangular, and may be hexagonal, circular, or the like.
  • the top side wall 224 and the bottom side wall 244 generally have corresponding shapes, and the inner wall diameter of one of the two is equal to or slightly smaller than the outer wall diameter of the other, such that the top side wall 224 can be nested in the
  • the bottom sidewall 244 may be sleeved on the top sidewall 224.
  • the driving device 200 when the driving device 200 is disposed under the lower chamber portion, the driving device may be referred to as a lower driving device, and the lower driving device includes a lower top cover and a lower bottom cover.
  • the lower top cover and the lower bottom cover respectively comprise a correspondingly shaped substrate portion, and the base portion of the lower top cover extends downwardly with a top side wall, and the base portion of the lower bottom cover extends upwardly a side wall, a substrate portion of the lower top cover, a top side wall, and a cavity surrounded by the base portion and the bottom side wall of the lower bottom cover a fluid drive device, the fluid drive device being fixedly coupled to the lower top cover and the bottom plate cover.
  • the bottom surface of the lower top cover and the bottom bottom cover are formed with corresponding column holes, and the substrate portion of the lower bottom cover is fixed to the column, and the expansion and contraction of the fluid driving device are performed.
  • the lower top cover and the lower chamber portion carried by the lower top cover are driven to move upward or downward along the guide of the column.
  • the lower top cover may be fixed to the adjacent lower chamber portion or integrally formed as one piece.
  • the driving device 200 when the driving device 200 is disposed above the upper chamber portion, the driving device may be referred to as an upper driving device, and the upper driving device includes an upper top cover and an upper bottom cover.
  • the top cover and the upper bottom cover respectively comprise a correspondingly shaped substrate portion, and the base portion of the upper top cover extends downwardly with a top side wall, and the base portion of the upper bottom cover extends upwardly with a bottom side
  • the wall, the substrate portion of the upper top cover, the top side wall, and the cavity defined by the base portion and the bottom side wall of the upper bottom cover include a fluid driving device, and the fluid driving device and the upper portion
  • the top cover and the base portion of the upper bottom cover are fixedly connected
  • the substrate portion of the upper top cover and the upper bottom cover is formed with a corresponding column hole, the substrate portion of the upper top cover is fixed to the column, and the substrate portion of the upper bottom cover is The upper chamber portion is connected, and the upper bottom cover and the upper chamber portion connected to the upper bottom cover plate are driven to move upward or downward along the column by expansion and contraction of the fluid driving device. .
  • the upper bottom cover and the adjacent upper chamber portion may be fixed to each other or integrally formed as one piece.
  • the multi-chamber semiconductor processing apparatus of the present invention employs a pillar guiding structure, and a plurality of microchambers are longitudinally disposed on the pillar guiding structure.
  • the edges of the upper and lower chamber portions in each microchamber contain corresponding post holes.
  • both the upper chamber portion and the lower chamber portion are movable relative to each other along a column extending through the column hole; and in still other embodiments, the upper chamber portion and the lower chamber portion One of the upper and lower chamber portions is fixed to a predetermined position of the column, and the other of the upper chamber portion and the lower chamber portion is driven by the driving device to move under the guidance of the column.
  • the multi-chamber semiconductor processing apparatus 300 includes a first microcavity 320 and a second microchamber 340 disposed longitudinally on four uprights 33, the partial exterior of which may be provided with threads (not shown).
  • the first microchamber 320 includes a Jth upper chamber portion 322 and a first intermediate plate 330 forming a lower chamber portion thereof.
  • the second microchamber 340 includes a first intermediate plate 330 and a second lower chamber portion 342 that form an upper chamber portion thereof.
  • the first intermediate plate 330 includes a rectangular substrate portion extending upward from the substrate portion to form a lower chamber portion of the first micro-chamber 320; and extending downward from the substrate portion
  • the upper chamber portion of the second microchamber 340, and the first intermediate plate 330 can be fixed to the uprights 33 by a nut 36 that matches the threads on the uprights 33 and cannot move.
  • the multi-chamber semiconductor processing apparatus 300 further includes a first upper driving device 360 that drives the first upper chamber portion 322 to move up and down along the column 33 and a driving the second lower chamber portion 342 along the column 33 is a first lower drive unit 380 that moves up and down.
  • the first upper drive unit 360 has a structure substantially similar to that of the drive unit shown in Fig. 2.
  • the first upper drive unit 360 includes an upper top cover 362 that can be secured to the uprights 33 by a nut 38.
  • the upper bottom cover of the first upper driving device 360 may be integrally formed with the first upper chamber portion 322 as one component.
  • the first upper chamber portion 322 extends upward to form an upper bottom cover of the upper drive unit 360.
  • the first lower drive unit 380 also has a structure substantially similar to that of the drive unit shown in Fig. 2.
  • the first lower drive unit 380 includes a first lower bottom cover 382, and the lower top cover of the first lower drive unit 380 and the second lower chamber portion 342 are integrally formed as one piece.
  • a lower top cover of the first lower driving device 380 is formed to extend downward from the surface of the second lower chamber portion 342.
  • the multi-chamber semiconductor processing apparatus 300 includes two micro-chambers, wherein a lower chamber portion of the first micro-chamber 320 is fixed to the column and cannot move, and the first upper chamber portion 322 was The drive unit is driven to move along the column.
  • the upper chamber portion of the second microchamber 340 is fixed to the column and is not movable, and the second lower chamber portion 342 is driven to move along the column by the driving device.
  • the lower chamber portion of the first micro chamber 320 and the upper chamber portion of the second micro chamber 340 are integrally formed as a first intermediate plate 330.
  • the upper bottom cover and the first upper chamber portion 322 of the first upper driving device 360 are integrally formed as one component; the lower top cover and the second lower chamber portion 342 of the first lower driving device 380 are The body is formed into one part.
  • the first intermediate plate 330 may also be replaced by two plates that are fixed to each other, that is, the lower chamber portion of the first microchamber 320 and the upper chamber portion of the second microchamber 340 that are fixed to each other.
  • Other integrally formed components may also be replaced by two components that are fixed to each other, and will not be described below.
  • the micro-drive of the upper and lower chambers may be included between the upper chamber portion and the lower chamber portion of each microchamber of the multi-chamber semiconductor processing device.
  • the micro-drive component may be a spring, a micro hydraulic device or a pneumatic device or the like that is sleeved on the column, and the upper chamber portion and the lower chamber portion of each micro-chamber are in the micro-drive
  • the driving force provided by the component and the drive device drives the downward movement or downward movement along the guide of the post.
  • the multi-chamber semiconductor processing apparatus 500 includes a third micro-chamber 520 and a fourth micro-chamber 540 disposed longitudinally on four uprights 55, the third micro-chamber 520 including a third upper chamber portion 522 and A second intermediate plate 530 is formed which is a lower chamber portion thereof.
  • the fourth microchamber 540 includes a second intermediate plate 530 and a fourth lower chamber portion 542 that form an upper chamber portion thereof.
  • the second intermediate plate 530 includes a rectangular substrate portion extending upward from the substrate portion to form a lower chamber portion of the third micro-chamber 520; extending downward from the substrate portion The upper chamber portion of the fourth microchamber 540.
  • the multi-chamber semiconductor processing apparatus 500 further includes a second lower driving device 560 that drives the second intermediate plate 530 and the fourth lower chamber portion 542 to move up and down along the column 55.
  • the third upper chamber portion 522 can be fixed to the column 55 by using a nut or the like, and the upper chamber portion 522 of the third micro chamber 520 and the second intermediate plate 530 are further included
  • the first spring 524 is sleeved on the column 55.
  • the first spring 524 sleeved on each column 55 can adopt the same spring coefficient and Spiral tension springs of different sizes.
  • the second intermediate plate 530 and the fourth lower chamber portion 542 are also included between the second intermediate plate 542 and the fourth lower chamber portion 542.
  • the second spring 544 on the post 55, the second spring 544 that is sleeved on each of the posts 55 can also adopt a helical tension spring of the same spring coefficient and size. Both the second intermediate plate 530 and the fourth lower chamber portion 542 are slidable up and down along the column 55.
  • the second lower driving device 560 includes a second lower bottom cover 562, and the lower top cover of the second lower driving device 560 and the fourth lower chamber portion 542 are integrally formed as one piece.
  • a lower top cover of the second lower driving device 560 is formed to extend downward from a lower surface of the fourth lower chamber portion 542.
  • the fourth lower chamber portion 542 moves upward along the column 55, and simultaneously drives the second intermediate portion by the elastic force of the second spring 544.
  • the plate 530 also moves upward, and finally stops at the closed position when the third upper chamber portion 522, the second intermediate plate 530, and the fourth lower chamber portion 542 are closely attached to each other.
  • the fourth lower chamber portion 542 moves downward along the column 55 and combines the first spring 524 and the second spring 544
  • the elastic force causes the microchamber to finally stop in an open position when the third upper chamber portion 522, the second intermediate plate 530, and the fourth lower chamber portion 542 are separated from each other.
  • the fourth microchamber 540 will be slightly smaller than the third micro.
  • the chamber 520 is closed more closely. Therefore, in order to make the third microchamber 520 and the fourth microchamber 540 closed as closely, a first spring 524 having a lower spring rate and a second spring 544 having a higher spring rate may be employed.
  • the multi-chamber semiconductor processing apparatus 500 includes two micro-chambers, wherein the upper chamber portion of the third micro-chamber 520 is fixed to the column and cannot move, and constitutes the third micro-chamber
  • the lower chamber portion of 520 and the second intermediate plate 530 constituting the upper chamber portion of the fourth micro chamber 540 and the lower chamber portion 542 of the fourth micro chamber 540 are movable along the column.
  • the semiconductor processing apparatus 500 has an advantage in that one driving apparatus can be saved, but the semiconductor processing apparatus 500 has a drawback in that the opening and closing of the micro chambers are simultaneously performed. It is not possible to perform a single one for each of the micro chambers.
  • the semiconductor processing apparatus 500 also employs a micro-driving component such as a spring for the transmission of the driving force, and a spring of a different spring coefficient can be used to eliminate the influence of gravity on the tightness of the microchamber closure.
  • a micro-driving component such as a spring for the transmission of the driving force
  • a spring of a different spring coefficient can be used to eliminate the influence of gravity on the tightness of the microchamber closure.
  • the upper chamber portions of all of the microchambers of the multi-chamber semiconductor processing device are fixedly coupled and the lower chamber portions of all of the microchambers are fixedly coupled, when the drive device drives the microscopically located lowermost side When the lower chamber portion of the chamber moves upward, the lower chamber portion of all the micro chambers is guided by the column Moving upward; when the driving device drives the upper chamber portion of the uppermost microchamber to move downward, the upper chamber portions of all the microchambers are moved downward under the guidance of the column.
  • the multi-chamber semiconductor processing apparatus 700 includes three microchambers longitudinally disposed on six uprights 75, a fifth microchamber 720, a sixth microchamber 740, and a seventh microchamber 760, respectively.
  • the three microchambers are not directly fixed to the six uprights 75, but are fixed to six sleeves that are slidable up and down along the six uprights 75, the inner diameter of the six sleeves being equal to or Slightly larger than the outer diameter of the six uprights 75.
  • the six sleeves include three first sleeves 77 fixed to the respective upper chamber portions and three second sleeve tubes 79 fixed to the respective lower chamber portions.
  • the partial appearance of the six uprights 75, the first sleeve 77 and the second sleeve 79 may be provided with threads.
  • the fifth microchamber 720 includes a fifth upper chamber portion 722 and a fifth lower chamber portion 724; the sixth microchamber chamber 740 includes a sixth upper chamber portion 742 and a sixth lower chamber The chamber portion 744; the seventh micro chamber 760 includes a seventh upper chamber portion 762 and a seventh lower chamber portion 764.
  • Each of the chamber portions is formed with six sleeve holes corresponding to the six columns and the respective sleeves at the edges. The inner diameter of the sleeve bore is equal to or slightly larger than the outer diameter of the six sleeves.
  • the fifth upper chamber portion 722, the sixth upper chamber portion 742, and the seventh upper chamber portion 762 are both fixed to the first sleeve 77 by nuts.
  • the fifth lower chamber portion 724, the sixth lower chamber portion 744, and the seventh lower chamber portion 764 are both fixed to the second sleeve 79 by nuts.
  • the three first sleeves 77 and the three second sleeves 79 are arranged in a crosswise manner, and the principle of one plane is determined according to three points, and the respective chamber portions are fixed to the sleeves and parallel to each other.
  • the adjacent upper chamber portions have the same predetermined interval, and the adjacent lower chamber portions also have the same predetermined interval.
  • the multi-chamber semiconductor processing apparatus 700 also includes a second upper drive 710 and a third lower drive 780.
  • the second upper driving device 710 and the third lower driving device 780 each have a structure similar to that of the driving device shown in FIG. 2.
  • the second upper driving device 710 includes an upper top cover 712 and an upper bottom cover 714 and a fluid driving device (not shown) disposed between the upper top cover 712 and the upper bottom cover 714.
  • the fluid drive device is fixedly coupled to the upper top cover 712 and the upper bottom cover 714.
  • the upper top cover 712 is directly fixed to the top position of the column 75 by a nut, and the upper bottom cover 714 is fixed to the first sleeve by the nut and the fifth upper chamber portion 722. 77.
  • the upper bottom cover 714, the fifth upper chamber portion 722, the sixth upper chamber portion 742, and the seventh upper portion The chamber portion 762 and the first sleeve 77 are fixed to each other by a nut to form an upper chamber kit
  • the third lower driving device 780 includes a lower top cover 782 and a lower bottom cover 784 as described in FIG. 7B.
  • a fluid driving device (not shown) disposed between the lower top cover 782 and the lower bottom cover 784, the fluid driving device and the lower top cover 782 and the lower bottom cover 784 Fixedly connected.
  • the lower bottom cover 784 is directly fixed to the bottom position of the upright 75 by a nut.
  • the lower top cover 782 is fixed to the second sleeve 79 by a nut and the seventh lower chamber portion 764.
  • the lower top cover 782, the fifth lower chamber portion 724, the sixth lower chamber portion 744, the seventh lower chamber portion 764, and the second sleeve 79 are fixed to each other by a nut to form a lower chamber.
  • Room kit as shown in Figure 7C.
  • the fluid drive in the second upper drive 710 and/or the third lower drive 780 is inflated, the upper chamber kit and the lower chamber kit are relatively moved, and finally The pair of upper chamber portions and each pair of lower chamber portions are stopped in the closed position when they are in close contact with each other.
  • the upper chamber kit and the lower chamber kit are moved back, and in each pair The upper chamber portion and each pair of lower chamber portions are stopped in an open position when separated from each other.
  • the distance between the respective upper chamber portions should be the same as the distance between the corresponding lower chamber portions for the fifth microchamber 720, the sixth microchamber 740 and the seventh microchamber 760.
  • the respective lower chamber portions are displaced in the same manner, they can be simultaneously in the same conforming or discrete state as the corresponding upper chamber portions.
  • the distance between the respective upper chamber portions and the distance between the corresponding lower chamber portions can be finely adjusted by the nut on the sleeve, and even the distance between the respective chamber portions can be passed.
  • the nut on the sleeve is fine-tuned.
  • FIG. 8 shows a cross-sectional view of a microchamber of the present invention in one embodiment 800.
  • the microchamber 800 includes an upper chamber plate 820 and a lower chamber plate 840.
  • An upper working surface 822 and a first flange 824 surrounding the upper working surface 822 are formed on the upper chamber plate 820.
  • a lower working surface 842 and a second flange 844 surrounding the lower working surface 842 are formed on the lower chamber plate 840.
  • the positions of the first flange 824 and the second flange 842 are opposite, and in order to be able to fit snugly, the first flange 824 and the second flange 842 may also include coupling therebetween.
  • first flange 824 and the second flange 842 may not be opposite but interlocked with each other, or the first flange 824 and the second flange 842 may be designed as other types according to a specific embodiment.
  • Mutual fit shapes such as opposing flanges and grooves.
  • the processed semiconductor wafer is housed within the upper working surface 822, the lower working surface 842, and the microcavity 800 formed by the first flanges 824 and I or the second flanges 844 forming the peripheral portion.
  • the predetermined width of the gap being generally between 0.01 mm and 10 mm, it should be understood that different pressures and different inner diameters are passed through the upper and lower chamber plates.
  • the seal ring can vary the width of the void, and as these voids change, different flow patterns for the treatment fluid within the microchamber 800 can be achieved, for example, a fluid that achieves laminar fluid flow to disturb the fluid flow pattern.
  • the microchamber 800 should also include at least one inlet 882 for processing fluid to enter the microchamber and at least one outlet 884 for processing fluid to exit the microchamber.
  • the treatment fluid supply device being connectable to an inlet 882 for the treatment fluid to enter the microchamber for providing a treatment fluid;
  • the fluid collection device is coupled to an outlet 884 for processing fluid to exit the microchamber for collecting waste fluid after processing the fluid processing semiconductor wafer.
  • the inlet 882 and the outlet 884 may be disposed at any one or more preferred locations of the inner wall of the microchamber 800. Further, in order to be able to better obtain the desired fluid pattern.
  • the microchamber 800 can also include at least one inlet for gas entering the microchamber and at least one outlet (not shown) for gas to exit the microchamber, through which the microchamber is accessed
  • the gas can serve as a carrier for the flow of the treatment fluid.
  • a gas supply device connected to an inlet for supplying gas into the microchamber for supplying a gas as a carrier when the treatment fluid flows, and a gas collection device connected to an outlet for discharging the gas to the microchamber for collecting the load Treat the exhaust gas after the fluid flows.
  • the gas supply device also includes a vacuum pump or the like for forming a vacuum. Since gas is also considered a fluid, for the sake of brevity, the meaning of the treatment fluid encompasses both chemical and gaseous gases.
  • the semiconductor processing device may further comprise a plurality of sensors for sensing the processing liquid in the semiconductor processing device before, during and after processing.
  • Parameters such as temperature, concentration, and concentration of substances and substances contained.
  • this article will not be described one by one. It should be noted, however, that the specific shape and configuration of the various components described above may be adapted for the installation and implementation of various sensors, processing liquid supply and recovery devices, and gas supply and recovery devices. Change and styling.
  • the semiconductor processing apparatus of the present invention can be used for wet copper film Chemical etching.
  • the treatment liquid may enter the microchamber from the inlet at the center, and flow radially to the edge of the semiconductor wafer, and after the treatment liquid reaches the edge, may be collected into the predetermined device via the outlet provided at the lower peripheral portion, in the collection
  • a sensor can be used to monitor the concentration of copper in the treated liquid to obtain the actual etch rate.
  • the entire etching process is monitored in conjunction with the acquisition of other parameters. Processing such as other semiconductor wafer surface cleaning and the like are well known to those skilled in the art and will not be described in detail herein.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种多腔室半导体处理装置，包括至少两个用于容纳和处理半导体晶圆的微腔室，每个微腔室包括形成上工作表面的上腔室部和形成下工作表面的下腔室部，所述上腔室部和所述下腔室部在一用于装载或移除该半导体晶圆的打开位置和一用于容纳和处理半导体晶圆的关闭位置之间相对移动。通过在纵向上设置多个微腔室，使得所述多腔室半导体处理装置能够同时对多个半导体圆晶进行单晶圆化学处理。

Description

多腔室半导体处理装置
技术领域 本发明涉及半导体晶圆或相似工件的表面处理领域， 特别涉及一种用于化 学处理半导体晶圆表面， 以及清洁、 蚀刻和其它处理的多腔室半导体处理装 置。 背景技术 在半导体集成电路制造的工艺流程中， 有近 100个以上的步骤与晶圆表面 清洗和化学处理有关， 这些步骤占总生产流程步骤的 25%至 35%。而在目前集 成电路制造业所使用的晶圆表面化学处理和清洗设备中， 有近 70%仍为传统的 批式处理清洗设备和 RCA类清洗方法。
随着集成电路生产中晶圆尺寸不断地增大 （200mm→300mm→450mm ) ， 电子元件刻线宽度不断地缩小 （65nm→45nm→32nm) ， 传统批式化学处理和 清洗技术（即每次处理多于 25片晶圆）所要面对的挑战也不断增加， 这些挑战 包括有晶圆表面处理均匀性问题和批量处理有可能发生的交叉污染问题； 对于 超微小粒子的去除能力不足的问题； 兆声 （Megasonics) 技术对超微结构的损 伤问题； 具有低介电常数和高介电常数的新材料和金属栅极等表面的化学处理 和清洗难题等等。 同时还因为存在晶圆单面化学处理和清洗的实际需求、 晶圆 的去薄以及在线设备的联机等众多因素， 促使了半导体晶圆的清洗技术逐渐地 由传统批量处理技术转向单晶圆处理技术。
在实际使用中，单晶圆处理技术的优势已在 IC生产后段 (BEOL)的广泛应用 中明显体现,并已开始逐渐扩展到 IC生产前段工序（FEOL) 中。 然而,单晶圆处 理技术在 IC生产前段工序的广泛应用严重地受限于单晶圆化学处理设备相对于 传统多晶圆批量处理设备的低通量问题。 仅靠增加更多单晶圆化学处理设备并 不能够很好地解决与传统批量处理设备在生产通量上的差距， 因为此解决问题 的方案所需的成本的上升的速度远比所能提高的生产通量要上升得快得多。
因此， 有必要提供一种更好的解决方案来解决上述问题。 发明内容 本发明的目的在于提供一种多腔室半导体处理装置， 所述多腔室半导体处 理装置具有多个纵向分布于立柱上的微 2腔室， 每个微腔室可以同时对多个半导 体晶圆分别进行单晶圆化学处理。
根据本发明的目的， 本发明提供一种多腔室半导体处理装置， 其包括： 包 括至少两个用于容纳和处理半导体晶圆的微腔室， 每个微腔室包括形成上工作 表面的上腔室部和形成下工作表面的下腔室部， 所述上腔室部和所述下腔室部 在一用于装载或移除该半导体晶圆的打开位置和一用于容纳和处理半导体晶圆 的关闭位置之间相对移动， 在关闭位置时， 半导体晶圆安置于所述上工作表面 和下工作表面之间， 且与所述微腔室的内壁形成有供处理流体流动的空隙， 所 述微腔室包括至少一个供处理流体进入所述微腔室的入口和至少一个供处理流 体排出所述微腔室的出口。
进一步的， 所述多腔室半导体处理装置还包括驱动装置， 至少一个微腔室 的上腔室部或下腔室部被所述驱动装置驱动而移动， 所述上腔室部和下腔室部 中的另外一个被固定于预定位置。
进一步的， 所述多腔室半导体处理装置还包括贯穿每个微腔室的上腔室部 和下腔室部的立柱， 所述上腔室部和所述下腔室部沿所述立柱在所述打开位置 和所述关闭位置相对移动。
进一步的， 所述多腔室半导体处理装置还包括位于最下侧的微腔室的下腔 室部下方的驱动装置或 /和位于最上侧的微腔室的上腔室部上方的驱动装置， 所 述驱动装置沿纵向驱动对应的腔室部， 每个微腔室的上腔室部和所述下腔室部 之间还包括可伸缩的微驱动部件， 每个微腔室的上腔室部和所述下腔室部在所 述微驱动部件和所述驱动装置提供的驱动力驱使下沿所述立柱的导引向上移动 或者向下移动。
更进一步的， 所述微驱动部件为套接在所述立柱上的螺旋拉伸弹簧， 且位 于下方的微腔室的上腔室部和下腔室部之间的螺旋拉伸弹簧的弹簧系数大于位 于上方微腔室的上腔室部和下腔室部之间的螺旋拉伸弹簧的弹簧系数。
进一步的， 相邻的两个微腔室中， 位于纵向上方的微腔室的下腔室部和位 于纵向下方的微腔室的上腔室部相互固定或者一体成型。
更进一步的， 所述多腔室半导体处理装置还包括位于最下侧的微腔室的下 腔室部下方的驱动装置或位于最上侧的微腔室的上腔室部上方的驱动装置， 所 有微腔室的上腔室部固定相连并且所有微腔室的下腔室部固定相连， 当驱动装 置驱动位于最下侧的微腔室的下腔室部向上移动时， 所有微腔室的下腔室部向 上移动； 当驱动装置驱动位于最上侧的微腔室的上腔室部向下移动时， 所有微 腔室的上腔室部在所述立柱的导引下向下移动。
再进一步的， 所有微腔室的上腔室部被固定于若干根第一套管上； 所有微 腔室的下腔室部被固定于若干根第二套管上， 每根第一套管和第二套管分别套 接在所述立柱上并可沿所述立柱向上或者向下移动。
进一步的， 所述第一套管和第二套管的外表面包含有螺紋， 所述第一套管 和第二套管贯穿所述上腔室部或者下腔室部的边缘后选择性地通过对应于所述 螺紋的螺帽固定。
进一步的， 所述驱动装置包括顶盖板和底盖板， 所述顶盖板和底盖板分别 包括对应形状的基板部， 并且所述顶盖板的基板部向下延伸有顶侧壁， 所述底 盖板的基板部向上延伸有底侧壁， 所述顶盖板的基板部、 顶侧壁和所述底盖板 的基板部、 底侧壁围成的空腔内包含一流体驱动装置， 所述流体驱动装置与所 述基板部相连， 所述顶盖板或者底盖板中的一个固定于所述立柱的预定位置， 所述顶盖板或者底盖板中的另一个与相邻微腔室的腔室部固定相连或一体成 型， 藉由所述流体驱动装置的膨胀和收缩， 驱动所述顶盖板和所述底盖板中的 未固定于所述立柱上的那一个及与其相邻的腔室部沿所述立柱移动。
再进一步的， 所述多腔室半导体处理装置还包括处理流体供应装置和处理 流体收集装置。 所述处理流体供应装置， 连接于供处理流体进入所述微腔室的 入口， 用于提供处理流体。 所述处理流体收集装置， 连接于供处理流体排出所 述微腔室的出口， 用于收集处理流体处理半导体晶圆后的废液， 其中， 所述处 理流体包括化学制剂和气体。
与现有技术相比， 本发明中的多腔室半导体处理装置采用立柱导引结构， 并在所述立柱上纵向设置多个微腔室。 使得所述半导体处理装置能够同时对多 个半导体晶圆分别进行单晶圆化学处理。 附图说明 结合参考附图及接下来的详细描述， 本发明将更容易理解， 其中同样的附 图标记对应同样的结构部件， 其中：
图 1为本发明中的微腔室在一个实施例中的立体示意图； 图 2为本发明中的驱动装置在一个实施例中的立体示意图；
图 3为本发明中的多腔室半导体处理装置在一个实施例中处于打开位置时 的立体示意图；
图 4为本发明中的多腔室半导体处理装置在一个实施例中处于关闭位置时 的立体示意图；
图 5为本发明中的多腔室半导体处理装置在另一个实施例中处于打开位置 时的立体示意图；
图 6为本发明中的多腔室半导体处理装置在另一个实施例中处于关闭位置 时的立体示意图；
图 7A 为本发明中的多腔室半导体处理装置在再一个实施例中处于关闭位 置时的立体示意图；
图 7B 为本发明中的上腔室套件及第二上部驱动装置在再一个实施例中的 分解示意图；
图 7C为本发明中的下腔室套件、第三下部驱动装置和立柱在再一个实施例 中的组装示意图；
图 8为本发明中的微腔室在一个实施例中的剖面示意图。 具体实施方式 为使本发明的上述目的、 特征和优点能够更加明显易懂， 下面结合附图和 具体实施方式对本发明作进一步详细的说明。
为了便于描述本发明， 首先描述作为所述多腔室半导体处理装置的核心部 件之一的微腔室。 所述微腔室用于容纳和处理半导体晶圆。
请参考图 1， 其示出了本发明中的微腔室在一个实施例 100 中的立体示意 图。 所述微腔室 100包括上腔室部 120和下腔室部 140， 所述上腔室部 120中 包括一个矩形基板部及从所述矩形基板部向下延伸形成的一上工作表面及上周 边部分， 所述下腔室部 140中也包括一个矩形基板部及从所述矩形基板部向上 延伸形成一下工作表面及下周边部分， 所述上工作表面、 上周边部分、 下周边 部分和下工作表面围绕成一个用于容纳和处理半导体晶圆的空腔。 所述上腔室 部 120和所述下腔室部 140可以通过立柱 （未示出） 的导引下在一个关闭位置 和一个打开位置之间变化。 当处于打开位置时， 所述上腔室部 120和所述下腔 室部 140互相分离， 以便于装载和移除将要被处理的或者已经被处理过的半导 体晶圆于所述微腔室； 当处于关闭位置时， 所述上腔室部 120和所述下腔室部 140对应紧密贴合， 所述上工作表面、上周边部分、下周边部分和下工作表面围 绕成所述容纳半导体晶圆的空腔。 当半导体晶圆被装载进入所述微腔室， 并且 所述微腔室处于关闭位置时， 可将化学试剂及其他流体引入所述微腔室内部以 对其内的半导体晶圆进行分析、 清洁、 蚀刻及其它处理， 并在处理过程中及处 理完毕后， 将处理后的所述化学试剂及其它流体引出所述微腔室。
下文将描述作为所述多腔室半导体处理装置的另一核心部件之一的驱动装 置。 所述驱动装置被设置于所述上腔室部的上方或者所述下腔室部的下方， 用 于驱动所述上腔室部或者下腔室部沿所述立柱的导引而上下移动。
请参考图 2， 其示出了本发明中的驱动装置在一个实施例 200中的分解示 意图。 所述驱动装置 200包括顶盖板 220和底盖板 240， 所述顶盖板 220和底 盖板 240分别包括对应形状的基板部， 并且所述顶盖板 220的基板部 222向下 延伸有顶侧壁 224， 所述底盖板 240的基板部 242向上延伸有底侧壁 244， 所 述顶盖板 220的基板部 222、 顶侧壁 224和所述底盖板 240的基板部 242、 底 侧壁 244围成的空腔内包含一流体驱动装置 260， 所述流体驱动装置 260可以 是一个气袋。 所述流体驱动装置 260与所述顶盖板 220和所述底盖板 240的基 板部紧密固定连接。 当所述顶盖板 220和所述底盖板 240中的一个被固定于所 述立柱的预定位置时， 藉由所述流体驱动装置 260的膨胀和收缩， 可以驱动所 述顶盖板 220和所述底盖板 240中未固定于所述立柱的那一个及与其相连的组 件沿所述立柱移动。
其中， 所述基板部不一定为矩形， 也可以为六边形、 圆形等。 所述顶侧壁 224和所述底侧壁 244通常具有对应的形状， 并且两者之一的内壁直径等于或 者略小于另外一者的外壁直径，使得所述顶侧壁 224可以套接在所述底侧壁 244 上， 或者说， 所述底侧壁 244可以套接在所述顶侧壁 224上。
具体来讲， 当所述驱动装置 200被设置于所述下腔室部下方时， 所述驱动 装置可以称之为下部驱动装置， 所述下部驱动装置包括下顶盖板和下底盖板， 所述下顶盖板和下底盖板分别包括对应形状的基板部， 并且所述下顶盖板的基 板部向下延伸有顶侧壁， 所述下底盖板的基板部向上延伸有底侧壁， 所述下顶 盖板的基板部、 顶侧壁和所述下底盖板的基板部、 底侧壁围成的空腔内包含一 流体驱动装置， 所述流体驱动装置可以与所述下顶盖板和所述下底盖板的基板 部固定相连。
所述下顶盖板和下底盖板的基板部边缘形成有对应的柱位孔， 所述下底盖 板的基板部与所述立柱固定， 藉由所述流体驱动装置的膨胀和收缩， 驱动所述 下顶盖板及被所述下顶盖板承载的下腔室部沿所述立柱的导引而向上移动或者 向下移动。 所述下顶盖板可以与相邻的下腔室部相互固定或者一体成型为一个 部件。
同理， 当所述驱动装置 200被设置于所述上腔室部上方时， 所述驱动装置 可以称之为上部驱动装置， 所述上部驱动装置包括上顶盖板和上底盖板， 所述 上顶盖板和上底盖板分别包括对应形状的基板部， 并且所述上顶盖板的基板部 向下延伸有顶侧壁， 所述上底盖板的基板部向上延伸有底侧壁， 所述上顶盖板 的基板部、 顶侧壁和所述上底盖板的基板部、 底侧壁围成的空腔内包含一流体 驱动装置， 所述流体驱动装置与所述上顶盖板和所述上底盖板的基板部固定相 连，
所述上顶盖板和上底盖板的基板部边缘形成有对应的柱位孔， 所述上顶盖 板的基板部与所述立柱固定， 所述上底盖板的基板部与所述上腔室部相连， 藉 由所述流体驱动装置的膨胀和收缩， 驱动所述上底盖板及与所述上底盖板板相 连的上腔室部沿所述立柱向上移动或者向下移动。 所述上底盖板与相邻的上腔 室部可以相互固定或者一体成型为一个部件。
作为本发明的重点和难点之一， 本发明中的多腔室半导体处理装置采用了 立柱导引结构， 并在所述立柱导引结构上纵向设置多个微腔室。 每个微腔室中 的上腔室部和下腔室部的边缘包含对应的柱位孔。 在一些实施例中， 所述上腔 室部和下腔室部都可以沿贯穿所述柱位孔的立柱相对移动； 而在另外一些实施 例中， 所述上腔室部和下腔室部中的一个被固定于所述立柱的预定位置， 而所 述上腔室部和下腔室部中的另外一个被驱动装置所驱动而在所述立柱的导引下 移动。
请结合参考图 3和图 4，其示出了本发明中的多腔室半导体处理装置在一个 实施例 300中分别处于打开位置和处于关闭位置时的立体示意图。 所述多腔室 半导体处理装置 300包括纵向设置于四根立柱 33上的第一微腔室 320和第二 微腔室 340， 所述立柱 33的局部外表可以设置有螺紋 （未示出） 。 其中所述第一微腔室 320包括第 J上腔室部 322和形成其下腔室部分的第 一中间板 330。 所述第二微腔室 340包括形成其上腔室部分的第一中间板 330 和第二下腔室部 342。 具体来讲， 所述第一中间板 330包括一呈矩形的基板部， 从所述基板部向上延伸形成所述第一微腔室 320的下腔室部分； 从所述基板部 向下延伸形成所述第二微腔室 340的上腔室部分， 并且所述第一中间板 330通 过匹配所述立柱 33上的螺紋的螺帽 36可以固定在所述立柱 33上而无法移动。
所述多腔室半导体处理装置 300还包括驱动所述第一上腔室部 322沿所述 立柱 33上下移动的第一上部驱动装置 360和驱动所述第二下腔室部 342沿所 述立柱 33上下移动的第一下部驱动装置 380。
所述第一上部驱动装置 360具有基本类似于图 2所示驱动装置的结构。 所 述第一上部驱动装置 360包括上顶盖板 362， 所述上顶盖板 362可以通过螺帽 38与所述立柱 33固定。 所述第一上部驱动装置 360的上底盖板可与所述第一 上腔室部 322—体成型为一个部件。 或者说， 所述第一上腔室部 322向上延伸 形成了所述上部驱动装置 360的上底盖板。 当位于所述第一上部驱动装置 360 中的流体驱动装置膨胀时，所述第一上腔室部 322被驱动而沿所述立柱 33向下 移动， 并且在与所述第一中间板 330紧密贴合时停止于该关闭位置。 当位于所 述第一上部驱动装置 360中的流体驱动装置收缩时， 所述第一上腔室部 322沿 所述立柱 33向上移动，并且在与所述第一中间板 330互相分离一定距离后停止 于一打开位置。
所述第一下部驱动装置 380也具有基本类似与图 2所示驱动装置的结构。 所述第一下部驱动装置 380包括第一下底盖板 382，所述第一下部驱动装置 380 的下顶盖板与所述第二下腔室部 342—体成型为一个部件。 或者说， 从所述第 二下腔室部 342的表面向下延伸形成所述第一下部驱动装置 380的下顶盖板。 当位于所述第一下部驱动装置 380中的流体驱动装置膨胀时， 所述第二下腔室 部 342被驱动而沿所述立柱 33向上移动， 并且在与所述第一中间板 330紧密 贴合时停止于该关闭位置。 当位于所述第一下部驱动装置 380中的流体驱动装 置收缩时， 所述第二下腔室部 342沿所述立柱 33向下移动， 并且在与所述第一 中间板 330互相分离一定距离后停止于一打开位置。
综上， 所述多腔室半导体处理装置 300包括两个微腔室， 其中第一微腔室 320的下腔室部分被固定于所述立柱上无法移动， 而所述第一上腔室部 322被 驱动装置驱动沿所述立柱移动。 其中第二微腔室 340的上腔室部分被固定于所 述立柱上无法移动，而所述第二下腔室部 342被驱动装置驱动沿所述立柱移动。 其中， 第一微腔室 320的下腔室部和第二微腔室 340的上腔室部一体成型为一 个第一中间板 330。所述第一上部驱动装置 360的上底盖板和第一上腔室部 322 一体成型为一个部件； 所述第一下部驱动装置 380的下顶盖板和第二下腔室部 342—体成型为一个部件。 显而易见地， 所述第一中间板 330也可以采用相互 固定的两块板也即相互固定的第一微腔室 320的下腔室部和第二微腔室 340的 上腔室部来代替。 其它一体成型的组件也均可以采用相互固定的两个组件来代 替， 下文不再 累述。
在另外一些实施例中， 所述多腔室半导体处理装置的每个微腔室的上腔室 部和所述下腔室部之间还可以包括有可伸缩运动而分开上下腔室的微驱动部 件， 所述微驱动部件可以是套接在所述立柱上的弹簧、 微型液压装置或者气压 装置等等， 每个微腔室的上腔室部和所述下腔室部在所述微驱动部件和所述驱 动装置提供的驱动力驱使下沿所述立柱的导引向上移动或者向下移动。 请结合 参考图 5和图 6， 其示出了本发明中的多腔室半导体处理装置在另一个实施例 500中分别处于打开位置和处于关闭位置时的立体示意图。所述多腔室半导体处 理装置 500包括纵向设置于四根立柱 55上的第三微腔室 520和第四微腔室 540， 所述第三微腔室 520包括第三上腔室部 522和形成其下腔室部分的第二 中间板 530。 所述第四微腔室 540包括形成其上腔室部分的第二中间板 530和 第四下腔室部 542。 具体来讲， 所述第二中间板 530包括一呈矩形的基板部， 从所述基板部向上延伸形成所述第三微腔室 520的下腔室部分； 从所述基板部 向下延伸形成所述第四微腔室 540的上腔室部分。 所述多腔室半导体处理装置 500还包括驱动所述第二中间板 530和第四下腔室部 542沿所述立柱 55上下移 动的第二下部驱动装置 560。
所述第三上腔室部 522可以利用螺帽等组件固定于所述立柱 55上， 所述 第三微腔室 520的上腔室部 522和所述第二中间板 530之间还包括有套接在所 述立柱 55上的第一弹簧 524， 当所述立柱 55为若干个时， 比如本实施例中的 四个，各个立柱 55上套接的第一弹簧 524可以采用相同弹簧系数和大小形状的 螺旋拉伸弹簧。
所述第二中间板 530和所述第四下腔室部 542之间也包括有套接在所述立 柱 55上的第二弹簧 544， 每个立柱 55上套接的第二弹簧 544也可以采用相同 弹簧系数和大小形状的螺旋拉伸弹簧。 所述第二中间板 530和所述第四下腔室 部 542都可沿所述立柱 55上下滑动。
所述第二下部驱动装置 560包括第二下底盖板 562， 所述第二下部驱动装 置 560的下顶盖板与所述第四下腔室部 542—体成型为一个部件。 或者说， 从 所述第四下腔室部 542的下表面向下延伸形成了所述第二下部驱动装置 560的 下顶盖板。 当位于所述第二下部驱动装置 560中的流体驱动装置膨胀时， 所述 第四下腔室部 542沿所述立柱 55向上移动， 并且利用第二弹簧 544的弹力同 时驱使所述第二中间板 530也向上移动， 最后在所述第三上腔室部 522、 所述 第二中间板 530和所述第四下腔室部 542都互相紧密贴合时停止于该关闭位置。 当位于所述第二下部驱动装置 560中的流体驱动装置收缩时， 所述第四下腔室 部 542沿所述立柱 55向下移动， 并且结合所述第一弹簧 524和第二弹簧 544 的弹力使得所述微腔室最后在所述第三上腔室部 522、 所述第二中间板 530和 所述第四下腔室部 542都互相分离时停止于一打开位置。 但是可以预料到， 由 于所述第二中间板 530的重力作用，如果所述第一弹簧 524和所述第二弹簧 544 采用同样弹簧系数的弹簧， 则第四微腔室 540将比第三微腔室 520闭合的更为 紧密。所以为了使所述第三微腔室 520和所述第四微腔室 540闭合的同样紧密， 可以采用较低弹簧系数的第一弹簧 524和较高弹簧系数的第二弹簧 544。
综上， 所述多腔室半导体处理装置 500包括两个微腔室， 其中第三微腔室 520的上腔室部被固定于所述立柱上无法移动， 而构成所述第三微腔室 520的 下腔室部分和构成所述第四微腔室 540的上腔室部分的第二中间板 530和所述 第四微腔室 540的下腔室部 542可以沿所述立柱移动。 对比与实施例 300中的 半导体处理装置可知， 所述半导体处理装置 500的优点是可以节约一个驱动装 置， 但是所述半导体处理装置 500的缺点是所述微腔室的打开和关闭是同时进 行的， 无法单一针对其中的一个微腔室单独进行。 同时， 所述半导体处理装置 500还采用了诸如弹簧之类的微驱动部件来进行驱动力的传递，并且可以采用不 同弹簧系数的弹簧消除重力对微腔室闭合紧密性的影响。
在再一些实施例中， 所述多腔室半导体处理装置的所有微腔室的上腔室部 固定相连并且所有微腔室的下腔室部固定相连， 当驱动装置驱动位于最下侧的 微腔室的下腔室部向上移动时， 所有微腔室的下腔室部在所述立柱的导引下向 上移动； 当驱动装置驱动位于最上侧的微腔室的上腔室部向下移动时， 所有微 腔室的上腔室部在所述立柱的导引下向下移动。
请进一步结合参考图 7A、 图 7B和图 7C, 其示出了本发明中的多腔室半导 体处理装置在再一个实施例 700中的立体示意图。 所述多腔室半导体处理装置 700包括纵向设置于六根立柱 75上的三个微腔室， 分别为第五微腔室 720、 第 六微腔室 740和第七微腔室 760。 特别地， 所述三个微腔室不是直接固定于所 述六根立柱 75上，而是被固定于可沿所述六根立柱 75上下滑动的六根套管上， 所述六根套管的内径等于或者略大于所述六根立柱 75的外径。所述六根套管包 括三根与各个上腔室部固定的第一套管 77和三根与各个下腔室部固定的第二套 管 79。 所述六根立柱 75、 第一套管 77和所述第二套管 79的局部外表可以设 置有螺紋。
具体地讲， 所述第五微腔室 720包括第五上腔室部 722和第五下腔室部 724； 所述第六微腔室 740包括第六上腔室部 742和第六下腔室部 744; 所述 第七微腔室 760包括第七上腔室部 762和第七下腔室部 764。 所述各个腔室部 均在边缘形成有对应于六根立柱及相应套管的六个套管孔。 所述套管孔的内径 等于或者略大于所述六根套管的外径。其中， 所述第五上腔室部 722、第六上腔 室部 742和第七上腔室部 762均通过螺帽固定于第一套管 77上。 而所述第五 下腔室部 724、 第六下腔室部 744和第七下腔室部 764均通过螺帽固定于第二 套管 79上。所述三根第一套管 77和所述三根第二套管 79交叉排列， 根据三点 确定一个平面的原理， 所述各个腔室部被固定于所述套管上并且互相平行。 并 且相邻的上腔室部具有相同的预定间隔， 相邻的下腔室部也具有相同的预定间 隔。
所述多腔室半导体处理装置 700还包括第二上部驱动装置 710和第三下部 驱动装置 780。 所述第二上部驱动装置 710和第三下部驱动装置 780均具有类 似于图 2所示驱动装置的结构。 所述第二上部驱动装置 710包括上顶盖板 712 和上底盖板 714以及设置在所述上顶盖板 712和上底盖板 714之间的流体驱动 装置 （未示出） 。 所述流体驱动装置与所述上顶盖板 712和上底盖板 714固定 相连。所述上顶盖板 712通过螺帽直接固定于所述立柱 75的顶部位置， 所述上 底盖板 714则通过螺帽与所述第五上腔室部 722—起固定于第一套管 77上。 换句话说， 所述上底盖板 714、 第五上腔室部 722、 第六上腔室部 742、 第七上 腔室部 762和第一套管 77被螺帽相互固定而形成一上腔室套件， 如图 7B中所 所述第三下部驱动装置 780则包括下顶盖板 782和下底盖板 784以及设置 在所述下顶盖板 782和所述下底盖板 784之间的流体驱动装置 （未示出） ， 所 述流体驱动装置与所述下顶盖板 782和所述下底盖板 784固定相连。 所述下底 盖板 784通过螺帽直接固定于所述立柱 75的底部位置。 所述下顶盖板 782则 通过螺帽与所述第七下腔室部 764—起固定于所述第二套管 79上。 换句话说， 所述下顶盖板 782、 第五下腔室部 724、 第六下腔室部 744、 第七下腔室部 764 和第二套管 79被螺帽相互固定而形成一下腔室套件， 如图 7C中所示。 易于思 及地， 当所述第二上部驱动装置 710和 /或第三下部驱动装置 780中的流体驱动 装置膨胀时， 所述上腔室套件和所述下腔室套件会相对移动， 最后在各对上腔 室部和各对下腔室部互相紧密贴合时停止于该关闭位置。 当所述第二上部驱动 装置 710和 /或所述第三下部驱动装置 780中的流体驱动装置收缩时，所述上腔 室套件和所述下腔室套件会相背移动， 并且在各对上腔室部和各对下腔室部互 相分离时停止于一打开位置。 应当认识到， 各个上腔室部之间的距离应当和对 应下腔室部之间的距离相同， 以便所述第五微腔室 720、 第六微腔室 740和第 七微腔室 760中的各个下腔室部移动同样位移时， 可以同时与对应的上腔室部 处于相同的贴合或者分立状态。 在具体的实施时， 所述各个上腔室部之间的距 离和对应下腔室部之间的距离可以通过套管上的螺帽进行微调， 甚至各个腔室 部之间的距离都可以通过套管上的螺帽进行微调。
为了进一步描述本发明的诸多方面， 请继续参考图 8， 其示出了本发明中的 微腔室在一个实施例 800中的剖面示意图。 所述微腔室 800包括上腔室板 820 和下腔室板 840。 所述上腔室板 820上形成一上工作表面 822以及环绕所述上 工作表面 822的第一凸缘 824。 所述下腔室板 840上形成一下工作表面 842以 及环绕所述下工作表面 842的第二凸缘 844。 通常来讲， 所述第一凸缘 824和 第二凸缘 842的位置是相对的， 并且为了能够紧密贴合， 所述第一凸缘 824和 第二凸缘 842之间还可以包含有耦合结构或者诸如橡胶质地的密封圈 860。 当 然， 所述第一凸缘 824和第二凸缘 842也可以不是相对的而是互相咬合的， 或 者所述第一凸缘 824和第二凸缘 842根据具体实施例而被设计为其它类型的相 互吻合形状， 比如相对的凸缘和凹槽。 被处理的半导体晶圆被容纳于所述上工作表面 822、 下工作表面 842以及 形成周边部分的第一凸缘 824和 I或第二凸缘 844形成的微腔室 800内。 所述 半导体晶圆与所述上下工作表面之间还应当存在预期的空隙， 所述空隙的预定 宽度通常在 0.01 mm与 10mm之间， 应该能够理解， 通过上下腔室板不同的压 力和不同内径的密封圈可以改变所述空隙的宽度， 而随着此等空隙的改变， 可 以实现用于微腔室 800内的处理流体的不同流动图案， 例如， 实现层状流体流 动对扰动流体流动的流体图案。 当然， 为了引进处理流体， 所述微腔室 800还 应当包括有至少一个供处理流体进入所述微腔室的入口 882和至少一个供处理 流体排出所述微腔室的出口 884。以及相应的处理流体供应装置和处理流体收集 装置 （未具体示出） ， 所述处理流体供应装置可以连接于供处理流体进入所述 微腔室的入口 882，用于提供处理流体；所述处理流体收集装置连接于供处理流 体排出所述微腔室的出口 884，用于收集处理流体处理半导体晶圆后的废液。为 了能够获得期望的流体图案， 所述入口 882和所述出口 884可以设置于所述微 腔室 800的内壁的任一或者多个优选位置。 更进一步地， 为了能够更好地获得 期望的流体图案。 所述微腔室 800还可以包括至少一个供气体进入所述微腔室 的入口和至少一个供气体排出所述微腔室的出口 （未示出） ， 通过所述入口进 入所述微腔室的气体可以作为所述处理流体流动时的载体。 连接于供气体进入 所述微腔室的入口的气体供应装置， 用于提供作为处理流体流动时载体的气体， 连接于供气体排出所述微腔室的出口的气体收集装置， 用于收集承载处理流体 流动后的废气。 所述气体供应装置也包括真空泵等用于形成真空的装置。 由于 气体也算是流体， 故本文中为了简便描述， 所述处理流体的含义既包含了化学 制剂也包含了气体。
另一方面， 为了能够监测、 分析整个处理过程， 所述半导体处理装置还可 以包含若干感测器， 用于感测所述半导体处理装置中的处理液体在处理前、 处 理中和处理后的诸如温度、 浓度和含有物质及含有物质的浓度等参数。 诸如此 类， 皆因具体实施例的不同设计人员和处理需求而定， 本文不再一一类述。 但 是应当注意到， 可能为了各种感测器、 处理液体供应及回收装置和气体供应及 回收装置等的安装和实施， 前文中所述的各个组件的具体形状和结构可能会发 生相应的适应性变化和造型。
作为具体使用时的实例， 本发明中的半导体处理装置可以用于薄膜铜的湿 式化学蚀刻。 处理液体可以从位于中心处的入口进入微腔室， 而沿径向向半导 体晶圆的边缘流动， 并在处理液体达到边缘后， 可以经由设置在下周边部分的 出口收集至预定装置内， 在收集过程中可利用感测器监测处理后的处理液体中 的铜浓度来获得实际的蚀刻速率。 结合其它参数的采集来监控整个蚀刻过程。 诸如其它的半导体晶圆表面清洁等等处理过程， 都是本领域技术人员所熟知的 内容， 本文也不再做详细的描述。
上述说明已经充分揭露了本发明的具体实施方式。 需要指出的是， 熟悉该 领域的技术人员对本发明的具体实施方式所做的任何改动均不脱离本发明的权 利要求书的范围。 相应地， 本发明的权利要求的范围也并不仅仅局限于所述具 体实施方式。

Claims

1、 一种多腔室半导体处理装置， 其特征在于， 其包括：
包括至少两个用于容纳和处理半导体晶圆的微腔室， 每个微腔室包括形成 上工作表面的上腔室部和形成下工作表面的下腔室部， 所述上腔室部和所述下 腔室部在一用于装载或移除该半导体晶圆的打开位置和一用于容纳和处理半导 体晶圆的关闭位置之间相对移动，
在关闭位置时， 半导体晶圆安置于所述上工作表面和下工作表面之间， 且 与所述微腔室的内壁形成有供处理流体流动的空隙， 所述微腔室包括至少一个 供处理流体进入所述微腔室的入口和至少一个供处理流体排出所述微腔室的出 □。
2、 根据权利要求 1所述的多腔室半导体处理装置， 其特征在于， 所述多腔 室半导体处理装置还包括驱动装置， 至少一个微腔室的上腔室部或下腔室部被 所述驱动装置驱动而移动， 所述上腔室部和下腔室部中的另外一个被固定于预 定位置。
3、 根据权利要求 1所述的多腔室半导体处理装置， 其特征在于， 所述多腔 室半导体处理装置还包括贯穿每个微腔室的上腔室部和下腔室部的立柱， 所述 上腔室部和所述下腔室部沿所述立柱在所述打开位置和所述关闭位置相对移 动。
4、 根据权利要求 3所述的多腔室半导体处理装置， 其特征在于， 所述多腔 室半导体处理装置还包括位于最下侧的微腔室的下腔室部下方的驱动装置或 /和 位于最上侧的微腔室的上腔室部上方的驱动装置， 所述驱动装置沿纵向驱动对 应的腔室部， 每个微腔室的上腔室部和所述下腔室部之间还包括可伸缩的微驱 动部件， 每个微腔室的上腔室部和所述下腔室部在所述微驱动部件和所述驱动 装置提供的驱动力驱使下沿所述立柱的导引向上移动或者向下移动。
5、 根据权利要求 4所述的多腔室半导体处理装置， 其特征在于， 所述微驱 动部件为套接在所述立柱上的螺旋拉伸弹簧， 且位于下方的微腔室的上腔室部 和下腔室部之间的螺旋拉伸弹簧的弹簧系数大于位于上方微腔室的上腔室部和 下腔室部之间的螺旋拉伸弹簧的弹簧系数。
6、 根据权利要求 1所述的多腔室半导体处理装置， 其特征在于， 相邻的两 个微腔室中， 位于纵向上方的微腔室^ 5下腔室部和位于纵向下方的微腔室的上 腔室部相互固定或者一体成型。
7、 根据权利要求 3所述的多腔室半导体处理装置， 其特征在于， 所述多腔 室半导体处理装置还包括位于最下侧的微腔室的下腔室部下方的驱动装置或位 于最上侧的微腔室的上腔室部上方的驱动装置， 所有微腔室的上腔室部固定相 连并且所有微腔室的下腔室部固定相连， 当驱动装置驱动位于最下侧的微腔室 的下腔室部向上移动时， 所有微腔室的下腔室部向上移动； 当驱动装置驱动位 于最上侧的微腔室的上腔室部向下移动时， 所有微腔室的上腔室部在所述立柱 的导引下向下移动。
8、 根据权利要求 7所述的多腔室半导体处理装置， 其特征在于， 所有微腔 室的上腔室部被固定于若干根第一套管上； 所有微腔室的下腔室部被固定于若 干根第二套管上， 每根第一套管和第二套管分别套接在所述立柱上并可沿所述 立柱向上或者向下移动。
9、 根据权利要求 8所述的多腔室半导体处理装置， 其特征在于， 所述第一 套管和第二套管的外表面包含有螺紋， 所述第一套管和第二套管贯穿所述上腔 室部或者下腔室部的边缘后选择性地通过对应于所述螺紋的螺帽固定。
10、 根据权利要求 3所述的多腔室半导体处理装置， 其特征在于， 所述驱 动装置包括顶盖板和底盖板， 所述顶盖板和底盖板分别包括对应形状的基板部， 并且所述顶盖板的基板部向下延伸有顶侧壁， 所述底盖板的基板部向上延伸有 底侧壁， 所述顶盖板的基板部、 顶侧壁和所述底盖板的基板部、 底侧壁围成的 空腔内包含一流体驱动装置， 所述流体驱动装置与所述基板部相连，
所述顶盖板或者底盖板中的一个固定于所述立柱的预定位置， 所述顶盖板 或者底盖板中的另一个与相邻微腔室的腔室部固定相连或一体成型， 藉由所述 流体驱动装置的膨胀和收缩， 驱动所述顶盖板和所述底盖板中的未固定于所述 立柱上的那一个及与其相邻的腔室部沿所述立柱移动。
11、 根据权利要求 10所述的多腔室半导体处理装置， 其特征在于， 所述多 腔室半导体处理装置还包括处理流体供应装置和处理流体收集装置，
所述处理流体供应装置， 连接于供处理流体进入所述微腔室的入口， 用于 提供处理流体， 和
所述处理流体收集装置， 连接于供处理流体排出所述微腔室的出口， 用于 收集处理流体处理半导体晶圆后的废液，
PCT/CN2011/085095 2011-07-29 2011-12-31 多腔室半导体处理装置 WO2013016942A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP11870218.2A EP2738789B1 (en) 2011-07-29 2011-12-31 Multi-chamber semiconductor processing device
US14/234,215 US9859134B2 (en) 2011-07-29 2011-12-31 Multi-chamber semiconductor processing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110217259.8A CN102903606B (zh) 2011-07-29 2011-07-29 多腔室半导体处理装置
CN201110217259.8 2011-07-29

Publications (1)

Publication Number Publication Date
WO2013016942A1 true WO2013016942A1 (zh) 2013-02-07

Family

ID=47575791

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/085095 WO2013016942A1 (zh) 2011-07-29 2011-12-31 多腔室半导体处理装置

Country Status (5)

Country Link
US (1) US9859134B2 (zh)
EP (1) EP2738789B1 (zh)
CN (1) CN102903606B (zh)
TW (1) TWI479560B (zh)
WO (1) WO2013016942A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2693461B1 (en) * 2011-04-15 2015-11-25 Wuxi Huaying Microelectronics Technology Co., Ltd. Semiconductor processing device
CN104485301B (zh) * 2014-12-19 2017-02-22 无锡华瑛微电子技术有限公司 包含防腐蚀立柱结构的半导体晶圆化学处理装置
CN105789089B (zh) * 2014-12-23 2019-11-05 中微半导体设备(上海)股份有限公司 真空处理装置、用于改善真空处理装置工艺结果的方法
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
CN105563292B (zh) * 2015-12-17 2017-09-08 东莞市秦智工业设计有限公司 一种smt激光模板的抛光设备
CN107564830B (zh) * 2016-06-30 2020-10-27 无锡华瑛微电子技术有限公司 半导体处理设备组以及半导体处理设备
CN108807591B (zh) * 2018-05-31 2021-06-22 安徽舟港新能源科技有限公司 一种太阳电池中硅块预制定位装置
CN109166814B (zh) * 2018-09-07 2023-10-17 无锡华瑛微电子技术有限公司 一种半导体处理装置
CN114843212B (zh) * 2022-04-29 2023-01-24 浙江晶睿电子科技有限公司 一种多功能用半导体腔式处理设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
CN1363948A (zh) * 2000-12-14 2002-08-14 东京毅力科创株式会社 基底处理系统和基底处理方法
US20060231389A1 (en) * 2005-04-14 2006-10-19 Ravi Mullapudi Insulated pallet in cleaning chamber
CN1909182A (zh) * 2005-08-05 2007-02-07 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
CN1947220A (zh) * 2004-03-12 2007-04-11 塞米图尔公司 单工件加工腔
CN101809708A (zh) * 2007-07-27 2010-08-18 马特森技术公司 先进多工件处理室
CN102057479A (zh) * 2008-06-06 2011-05-11 应用材料股份有限公司 具有水蒸气的uv固化方法与设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2734734B2 (ja) * 1990-04-10 1998-04-02 松下電器産業株式会社 プラズマ処理装置
JPH1116979A (ja) * 1997-06-19 1999-01-22 Tokyo Electron Ltd 半導体処理用真空チャンバ及び載置台装置
TW434653B (en) * 1999-09-14 2001-05-16 Liu Yu Tsai Stackable processing chamber apparatus
US7102763B2 (en) * 2000-07-08 2006-09-05 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
JP2002359232A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd プラズマ処理装置
EP1639629B1 (en) * 2003-06-13 2011-04-27 WEN, Sophia Apparatus for thin-layer chemical processing of semiconductor wafers
US7822324B2 (en) * 2006-08-14 2010-10-26 Applied Materials, Inc. Load lock chamber with heater in tube
JP2009032901A (ja) * 2007-07-27 2009-02-12 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
CN1363948A (zh) * 2000-12-14 2002-08-14 东京毅力科创株式会社 基底处理系统和基底处理方法
CN1947220A (zh) * 2004-03-12 2007-04-11 塞米图尔公司 单工件加工腔
US20060231389A1 (en) * 2005-04-14 2006-10-19 Ravi Mullapudi Insulated pallet in cleaning chamber
CN1909182A (zh) * 2005-08-05 2007-02-07 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
CN101809708A (zh) * 2007-07-27 2010-08-18 马特森技术公司 先进多工件处理室
CN102057479A (zh) * 2008-06-06 2011-05-11 应用材料股份有限公司 具有水蒸气的uv固化方法与设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2738789A4 *

Also Published As

Publication number Publication date
CN102903606B (zh) 2016-03-30
CN102903606A (zh) 2013-01-30
TW201306118A (zh) 2013-02-01
TWI479560B (zh) 2015-04-01
EP2738789B1 (en) 2016-04-13
EP2738789A1 (en) 2014-06-04
US9859134B2 (en) 2018-01-02
EP2738789A4 (en) 2014-10-01
US20140158299A1 (en) 2014-06-12

Similar Documents

Publication Publication Date Title
WO2013016942A1 (zh) 多腔室半导体处理装置
US9275881B2 (en) Liquid processing apparatus, liquid processing method, and storage medium
CN107615456B (zh) 基板处理装置以及基板处理方法
US9508567B2 (en) Cleaning jig and cleaning method for cleaning substrate processing apparatus, and substrate processing system
CN108140603B (zh) 基板支撑件和挡板设备
KR100758298B1 (ko) 기판 처리 장치 및 방법
US10211075B2 (en) Apparatus and method for treating a substrate
US9346084B2 (en) Liquid processing apparatus and liquid processing method
TWI469201B (zh) 可調式半導體處理裝置及其控制方法
JP6817748B2 (ja) 基板処理装置および基板処理方法
TW201349377A (zh) 獨立晶圓處理的方法及設備
US20100122773A1 (en) Apparatus for processing substrate and method of maintaining the apparatus
JP2014197592A (ja) 基板処理装置
US20150323250A1 (en) Substrate processing apparatus, deposit removing method of substrate processing apparatus and recording medium
KR20200142601A (ko) 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
JP6800818B2 (ja) 基板処理装置および基板処理方法
JP2009038328A (ja) 超臨界流体洗浄装置
KR102058034B1 (ko) 리프트 핀 유닛 및 이를 구비하는 기판 지지 유닛
KR101805525B1 (ko) 반도체 웨이퍼 세정 시스템
JP2017143218A (ja) 基板処理装置
CN107564830B (zh) 半导体处理设备组以及半导体处理设备
KR101010311B1 (ko) 매엽식 기판 처리 장치 및 방법
KR101570167B1 (ko) 기판 처리 장치
KR100695233B1 (ko) 기판 세정 장치 및 방법
KR102030038B1 (ko) 기판 처리 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11870218

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 14234215

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2011870218

Country of ref document: EP