WO2013011986A1 - Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque - Google Patents

Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque Download PDF

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Publication number
WO2013011986A1
WO2013011986A1 PCT/JP2012/068122 JP2012068122W WO2013011986A1 WO 2013011986 A1 WO2013011986 A1 WO 2013011986A1 JP 2012068122 W JP2012068122 W JP 2012068122W WO 2013011986 A1 WO2013011986 A1 WO 2013011986A1
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Prior art keywords
diffusion layer
type diffusion
forming composition
layer forming
mol
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PCT/JP2012/068122
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English (en)
Japanese (ja)
Inventor
洋一 町井
吉田　誠人
野尻　剛
岩室　光則
明博 織田
修一郎 足立
鉄也 佐藤
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日立化成工業株式会社
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Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to US14/233,704 priority Critical patent/US20150099352A1/en
Priority to JP2012547355A priority patent/JP5176159B1/ja
Priority to KR1020147004451A priority patent/KR20140041865A/ko
Priority to EP12814632.1A priority patent/EP2743967A4/fr
Priority to KR1020147003094A priority patent/KR101541660B1/ko
Priority to CN201280035500.8A priority patent/CN103688341B/zh
Publication of WO2013011986A1 publication Critical patent/WO2013011986A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an n-type diffusion layer forming composition for a solar cell element, a method for producing an n-type diffusion layer, and a method for producing a solar cell element. More specifically, the present invention relates to a technique that makes it possible to form an n-type diffusion layer in a specific portion of silicon that is a semiconductor substrate.
  • a p-type silicon substrate having a textured structure formed on the light receiving surface is prepared so as to promote the light confinement effect, and then a donor element-containing compound such as phosphorus oxychloride (POCl 3 ), nitrogen, oxygen
  • a donor element-containing compound such as phosphorus oxychloride (POCl 3 ), nitrogen, oxygen
  • POCl 3 phosphorus oxychloride
  • the n-type diffusion layer is uniformly formed by performing several tens of minutes at 800 ° C. to 900 ° C. in the mixed gas atmosphere.
  • phosphorus is diffused using a mixed gas
  • n-type diffusion layers are formed not only on the surface but also on the side surface and the back surface. Therefore, a side etching process for removing the side n-type diffusion layer is necessary.
  • the n-type diffusion layer on the back surface needs to be converted into a p + -type diffusion layer.
  • An aluminum paste is applied on the n-type diffusion layer on the back surface, and the p + -type diffusion is performed from the n-type diffusion layer by the diffusion of aluminum. Was converted into a layer.
  • the donor element or a compound containing the same is scattered from the solution or paste as a diffusion source, so that phosphorus is formed on the side surface and the back surface during the formation of the diffusion layer as in the gas phase reaction method using the mixed gas. And an n-type diffusion layer is formed in addition to the applied portion.
  • an n-type diffusion layer in the gas phase reaction using phosphorus oxychloride, not only one surface (usually the light-receiving surface or the surface) that originally requires the n-type diffusion layer, but also the other surface An n-type diffusion layer is also formed on the (non-light-receiving surface or back surface) and side surfaces.
  • an n-type diffusion layer is formed in addition to the surface as in the gas phase reaction method.
  • the present invention has been made in view of the above-described conventional problems, and is applicable to the manufacture of solar cell elements using a semiconductor substrate, and without forming an n-type diffusion layer in an unnecessary region.
  • An object is to provide an n-type diffusion layer forming composition capable of forming an n-type diffusion layer in a region, a method for manufacturing an n-type diffusion layer, and a method for manufacturing a solar cell element.
  • the means for solving the above-mentioned problems are as follows.
  • n-type diffusion layer forming composition containing glass powder containing P 2 O 5 , SiO 2 and CaO and a dispersion medium.
  • the glass powder contains P 2 O 5 in an amount of 20 mol% to 50 mol%, SiO 2 in an amount of 30 mol% to 70 mol%, and CaO in an amount of 2 mol% to 30 mol%.
  • the n-type diffusion layer forming composition ⁇ 3> The n-type diffusion layer forming composition according to ⁇ 1> or ⁇ 2>, wherein the glass powder has a volume average particle diameter of 10 ⁇ m or less.
  • n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 3>, wherein the glass powder is contained in an amount of 1% by mass to 30% by mass based on the total mass.
  • ⁇ 5> The n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 4>, wherein the viscosity is 1 Pa ⁇ s or more and 500 Pa ⁇ s or less.
  • ⁇ 6> The n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 5>, wherein the dispersion medium includes at least one selected from terpineol and butyl carbitol acetate.
  • n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 6>, wherein the dispersion medium includes ethyl cellulose.
  • a step of applying the n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 7> on a semiconductor substrate, and a semiconductor substrate provided with the n-type diffusion layer forming composition And a step of forming a n-type diffusion layer by performing a thermal diffusion treatment on the n-type diffusion layer.
  • a treatment temperature of the thermal diffusion treatment is 800 ° C. or higher and 1000 ° C. or lower.
  • the semiconductor substrate to which the n-type diffusion layer forming composition is applied is heat-treated at 80 ° C. or more and 300 ° C. or less, and the dispersion medium contained in the n-type diffusion layer forming composition
  • ⁇ 12> The method according to any one of ⁇ 8> to ⁇ 11>, further including a step of etching the surface of the n-type diffusion layer formed on the semiconductor substrate with hydrofluoric acid after the thermal diffusion treatment.
  • a method for producing an n-type diffusion layer is a method for producing an n-type diffusion layer.
  • ⁇ 13> A step of applying the n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 7> on a semiconductor substrate, and a semiconductor substrate having the n-type diffusion layer forming composition applied thereto
  • the manufacturing method of the solar cell element which has the process of giving a thermal-diffusion process and forming an n-type diffused layer, and the process of forming an electrode on the formed n-type diffused layer.
  • ⁇ 15> Use of the n-type diffusion layer forming composition according to any one of ⁇ 1> to ⁇ 7> in the manufacture of a solar cell element including a semiconductor substrate, an n-type diffusion layer, and an electrode.
  • the n-type diffusion layer can be applied to the manufacture of a solar cell element using a semiconductor substrate, and an n-type diffusion layer can be formed in a specific region without forming an n-type diffusion layer in an unnecessary region. It is possible to provide a diffusion layer forming composition, a method for producing an n-type diffusion layer, and a method for producing a solar cell element.
  • FIG. 2A is a plan view of the solar cell element as seen from the surface.
  • FIG. 2B is an enlarged perspective view showing a part of FIG. 2A.
  • the n-type diffusion layer forming composition of the present invention will be described, and then the n-type diffusion layer and solar cell element manufacturing method using the n-type diffusion layer forming composition will be described.
  • the term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even when it cannot be clearly distinguished from other processes.
  • a numerical range indicated using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
  • the amount of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. means.
  • the n-type diffusion layer forming composition of the present invention contains a glass powder containing at least P 2 O 5 , SiO 2 and CaO (hereinafter sometimes simply referred to as “glass powder”) and a dispersion medium. Furthermore, other additives may be contained as necessary in consideration of the applicability (applicability) of the composition.
  • the composition for forming an n-type diffusion layer contains a glass powder containing a donor element, and a material capable of forming an n-type diffusion layer by thermally diffusing this donor element after being applied to a semiconductor substrate. Say. By using an n-type diffusion layer forming composition containing a donor element in glass powder, an n-type diffusion layer is formed at a desired site, and an unnecessary n-type diffusion layer is not formed on the back surface or side surface.
  • the composition for forming an n-type diffusion layer of the present invention is applied, the side etching step that is essential in the gas phase reaction method that has been widely employed is not required, and the process is simplified.
  • the step of converting the n-type diffusion layer formed on the back surface into the p + -type diffusion layer is not necessary. Therefore, the method for forming the p + -type diffusion layer on the back surface and the material, shape, and thickness of the back electrode are not limited, and the choice of manufacturing method, material, and shape to be applied is widened.
  • the glass powder contained in the n-type diffusion layer forming composition of the present invention is melted by firing to form a glass layer on the n-type diffusion layer.
  • a glass layer is formed on the n-type diffusion layer even in a conventional gas phase reaction method or a method of applying a phosphate-containing solution or paste, and thus the glass layer produced in the present invention is a conventional method.
  • it can be removed by etching. Therefore, the n-type diffusion layer forming composition of the present invention does not generate unnecessary products and does not increase the number of steps as compared with the conventional method.
  • the donor element in the glass powder is not easily volatilized even during firing, the formation of an n-type diffusion layer not only on the surface but also on the back surface and side surfaces due to the generation of the volatilizing gas is suppressed. This is probably because the donor element is bonded to other elements in the glass powder or is taken into the glass, so that it is difficult to volatilize.
  • the n-type diffusion layer forming composition of the present invention can form an n-type diffusion layer having a desired concentration at a desired site, the concentration of the n-type donor element (dopant) is high. A selective region can be formed. On the other hand, it is generally difficult to form a selective region having a high n-type donor element concentration by a gas phase reaction method, which is a general method of an n-type diffusion layer, or a method using a phosphate-containing solution. It is.
  • the glass powder according to the present invention contains a donor element.
  • a donor element is an element that can form an n-type diffusion layer by diffusing (doping) into a semiconductor substrate.
  • P phosphorus
  • P 2 O 5 is used as the donor element-containing material used for introducing the donor element into the glass powder.
  • glass powder as a glass component material, comprising at least SiO 2 and CaO.
  • the glass powder according to the present invention is low in hygroscopicity and excellent in storage stability by combining P 2 O 5 that is a donor element-containing material and SiO 2 and CaO that are glass component materials. Therefore, even after long-term storage, the donor component in the glass powder is less likely to be volatilized during firing, so that the formation of n-type diffusion layers not only on the surface but also on the back surface and side surfaces due to the generation of volatilized gas is suppressed.
  • the content ratio of the donor element-containing substance and the glass component substance in the glass powder is preferably set as appropriate in consideration of the melting temperature, softening temperature, glass transition temperature, chemical durability, etching characteristics, and the like.
  • the molar fraction of P 2 O 5 contained in the glass powder is preferably 20 mol% to 50 mol%, and preferably 25 mol% to 45 mol% from the viewpoint of water resistance, melting temperature, and diffusion ability. More preferably, it is mol%.
  • the mole fraction of SiO 2 is preferably 30 mol% to 70 mol%, more preferably 35 mol% to 65 mol%, from the viewpoint of water resistance, melting temperature, and etching characteristics.
  • the mole fraction of CaO is preferably 2 mol% to 30 mol%, and preferably 5 mol% to 25 mol% from the viewpoint of water resistance, melting temperature, and etching characteristics.
  • the glass powder, P 2 O 5 and also good as 100% mole fraction in the SiO 2 and CaO may contain a glass component material in the following in addition to these.
  • glass component materials that can be added include K 2 O, Na 2 O, Li 2 O, BaO, SrO, MgO, BeO, ZnO, PbO, CdO, V 2 O 5 , SnO, ZrO 2 , MoO 3 , and La 2.
  • glass component materials include K 2 O, Na 2 O, Li 2 O, BaO, SrO, MgO, BeO, ZnO, PbO, CdO, V 2 O 5 , SnO, ZrO 2 , MoO 3 , and La 2.
  • Examples include O 3 , Nb 2 O 5 , Ta 2 O 5 , Y 2 O 3 , TiO 2 , ZrO 2 , GeO 2 , Al 2 O 3 , TeO 2, and Lu 2 O 3 .
  • Glass component materials other than SiO 2 and CaO can control the melting temperature, softening temperature, glass transition temperature, chemical durability, and the like by adjusting the component ratio as necessary. If the glass powder contains a glass component material other than SiO 2 and CaO, water resistance, melting temperature, etching characteristics, in view of the diffusing capacity, mole fraction in the glass powder of the glass component material other than SiO 2 and CaO, 0 0.01 mol% to 10 mol%, more preferably 0.1 mol% to 5 mol%.
  • the softening temperature of the glass powder is preferably 300 ° C. to 1000 ° C., more preferably 400 ° C. to 900 ° C., from the viewpoints of diffusibility and dripping during the diffusion treatment. If the softening temperature is 300 ° C. or higher, the viscosity of the glass does not become too low during the diffusion treatment, it is easy to suppress the occurrence of dripping and to prevent the formation of an n-type diffusion layer other than a specific portion. Tend. Moreover, if it is 1000 degrees C or less, there exists a tendency which becomes easy to suppress that a glass powder cannot be fuse
  • the softening temperature of the glass powder in the range of 300 ° C. to 1000 ° C., as described above, it becomes easy to suppress the occurrence of dripping, so that after the diffusion treatment, the n-type diffusion layer is formed into a desired shape in a specific region. It becomes easy to form.
  • the n-type diffusion layer forming composition when the n-type diffusion layer forming composition is applied in a linear pattern having a width of a ⁇ m, the linear width b after the diffusion treatment can hold a linear pattern in the range of b ⁇ 1.5 a ⁇ m.
  • the softening temperature of the glass powder can be obtained from a differential heat (DTA) curve or the like using a DTG-60H type differential heat / thermogravimetric simultaneous measuring device manufactured by Shimadzu Corporation.
  • the shape of the glass powder examples include a substantially spherical shape, a flat shape, a block shape, a plate shape, and a scale shape. Applicability to the substrate (applicability) and uniform diffusibility when an n-type diffusion layer forming composition is used. From this point, it is desirable that the shape is substantially spherical, flat or plate-like.
  • the glass powder preferably has a volume average particle size of 10 ⁇ m or less. When glass powder having a volume average particle diameter of 10 ⁇ m or less is used, a smooth coating film can be easily obtained. Furthermore, the volume average particle diameter of the glass powder is more preferably 5 ⁇ m or less, further preferably 2 ⁇ m or less, and particularly preferably 1 ⁇ m or less.
  • the minimum in particular of the volume average particle diameter of glass powder is not restrict
  • the volume average particle diameter of the glass powder can be measured by a laser scattering diffraction particle size distribution measuring device or the like.
  • the glass powder containing P 2 O 5 , SiO 2 and CaO is produced by the following procedure.
  • the crucible material include platinum, platinum-rhodium, gold, iridium, alumina, zirconia, quartz, carbon, boron carbide, boron nitride, and silicon nitride.
  • the material of the crucible is appropriately selected in consideration of the melting temperature, atmosphere, reactivity with the molten material, and the like.
  • the raw material is heated at a temperature corresponding to the glass composition in an electric furnace to obtain a melt. At this time, it is desirable to stir the melt uniformly.
  • the obtained melt is poured onto a zirconia substrate, a carbon substrate or the like to vitrify the melt. Finally, the glass is crushed into powder.
  • a known method such as a stamp mill, a jet mill, a bead mill, or a ball mill can be applied to the pulverization.
  • the content ratio of the glass powder in the n-type diffusion layer forming composition is determined in consideration of the suitability for application, the diffusibility of the donor element, and the like.
  • the content ratio of the glass powder in the n-type diffusion layer forming composition is preferably in the range of 1% by mass to 30% by mass, more preferably in the range of 5% by mass to 25% by mass, and 8% by mass to 20% by mass. % Range is more preferred.
  • the glass powder in the present invention is composed of P 2 O 5 having a mole fraction of 20 mol% to 50 mol% and SiO 2 having a mole fraction of 30% to 70% in terms of water resistance, melting temperature, etching characteristics, and diffusion ability. And a volume average particle diameter of 0.01 ⁇ m to 2 ⁇ m, or P 2 O having a mole fraction of 20 mol% to 50 mol%.
  • P 2 O 5 with a mole fraction of 25 mol% to 45 mol%, SiO 2 with a mole fraction of 30% to 70%, and a mole fraction of 2 mol. % To 30 mol% of CaO and a volume average particle size of 0.01 ⁇ m to 2 can be ⁇ m.
  • the glass powder in the present invention is composed of P 2 O 5 having a molar fraction of 25 mol% to 45 mol% and SiO 2 having a molar fraction of 35% to 65% in terms of water resistance, melting temperature, etching characteristics, and diffusion ability. More preferably, the volume average particle diameter is 0.01 ⁇ m to 2 ⁇ m.
  • the dispersion medium is a medium in which the glass powder is dispersed in the composition. Specifically, at least one selected from the group consisting of a binder and a solvent is employed as the dispersion medium.
  • binder examples include polyvinyl alcohol, polyacrylamide resin, polyvinyl amide resin, polyvinyl pyrrolidone, polyethylene oxide resin, polysulfonic acid, acrylamide alkyl sulfonic acid, cellulose ether resin, cellulose derivative, carboxymethyl cellulose, hydroxyethyl cellulose, ethyl cellulose, gelatin, starch And starch derivatives, sodium alginates and sodium alginate derivatives, xanthan and xanthan derivatives, gua and guar derivatives, scleroglucan and scleroglucan derivatives, tragacanth and tragacanth derivatives, dextrin and dextrin derivatives, (meth) acrylic acid resin, (meta) ) Acrylic ester resin (eg, alkyl (meth) acrylate resin, di Chill aminoethyl (meth) acrylate resin, etc.), butadiene resins, styrene resins, and copoly
  • the molecular weight of the binder is not particularly limited, and it is desirable to adjust appropriately in view of the desired viscosity of the composition. Moreover, what is necessary is just to let the content rate of the binder in a composition be the quantity which achieves the following viscosity, for example.
  • the viscosity of the n-type diffusion layer forming composition is preferably in the range of 1 Pa ⁇ s to 500 Pa ⁇ s, more preferably in the range of 10 Pa ⁇ s to 100 Pa ⁇ s, in consideration of the imparting properties during printing.
  • the viscosity is measured using a Tokyo Keiki E-type viscometer EHD type under the conditions of a sample amount of 0.4 ml and a rotation speed of 5 rpm.
  • the solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-i-propyl ketone, methyl-n-butyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, Ketone solvents such as diethyl ketone, dipropyl ketone, di-i-butyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone; diethyl ether, methyl ethyl ether, methyl- n-propyl ether, di-i-propyl ether, tetrahydrofuran, methyltetrahydrofuran, dioxane, dimethyldioxane, ethylene glycol di
  • terpene solvents such as ⁇ -terpinene, terpineol, myrcene, alloocimene, limonene, dipentene, ⁇ -pinene, ⁇ -pinene, terpineol, carvone, ocimene, and ferrandrene; water and the like. These are used singly or in combination of two or more.
  • the solvent is preferably at least one selected from terpineol and butyl carbitol acetate (diethylene glycol mono-n-butyl ether acetate) from the viewpoint of suitability for application to the substrate.
  • the content ratio of the dispersion medium in the n-type diffusion layer forming composition is determined in consideration of application suitability and donor concentration.
  • the method for producing an n-type diffusion layer of the present invention includes a step of applying the above-described n-type diffusion layer forming composition on a semiconductor substrate, and a thermal diffusion treatment on the semiconductor substrate to which the n-type diffusion layer forming composition is applied. And forming an n-type diffusion layer.
  • the method for producing a solar cell element of the present invention includes a step of applying the above-described n-type diffusion layer forming composition on a semiconductor substrate, and applying a thermal diffusion treatment to the semiconductor substrate to which the n-type diffusion layer forming composition is applied. Forming an n-type diffusion layer and forming an electrode on the formed n-type diffusion layer.
  • FIG. 1 is a schematic cross-sectional view conceptually showing an example of the manufacturing process of the solar cell element of the present invention.
  • 10 is a p-type semiconductor substrate
  • 12 is an n-type diffusion layer
  • 14 is a p + -type diffusion layer
  • 16 is an antireflection film
  • 18 is a front electrode
  • 20 is a back electrode (electrode layer).
  • common constituent elements are denoted by the same reference numerals and description thereof is omitted.
  • the semiconductor substrate is not limited to a silicon substrate.
  • an alkaline solution is applied to a silicon substrate which is a p-type semiconductor substrate 10 to remove a damaged layer, and a texture structure is obtained by etching.
  • a texture structure is obtained by etching.
  • the damaged layer on the silicon surface generated when slicing from the ingot is removed with 20% by mass caustic soda.
  • etching is performed with a mixed solution of 1% by mass caustic soda and 10% by mass isopropyl alcohol to form a texture structure (the description of the texture structure is omitted in the figure).
  • a texture structure on the light receiving surface (surface) side, a light confinement effect is promoted, and high efficiency is achieved.
  • the n-type diffusion layer forming composition layer 11 is formed by applying the n-type diffusion layer forming composition to the surface of the p-type semiconductor substrate 10, that is, the surface serving as the light receiving surface.
  • the application method is not limited, and examples include a printing method, a spin method, a brush coating, a spray method, a doctor blade method, a roll coater method, and an ink jet method, and a printing method, particularly a screen printing method is preferable.
  • the amount of the n-type diffusion layer-forming composition applied is not particularly limited.
  • the glass powder amount can be 0.01 g / m 2 to 100 g / m 2, and 0.1 g / m 2 to 10 g. / M 2 is preferable.
  • the substrate after applying the n-type diffusion layer forming composition may be removed before the thermal diffusion treatment in order to remove at least a part of the solvent contained in the composition.
  • a heat treatment step may be necessary.
  • the heat treatment is performed at a temperature of 80 ° C. to 300 ° C. for 1 minute to 10 minutes when using a hot plate, and about 10 minutes to 30 minutes when using a dryer or the like.
  • This heat treatment condition depends on the solvent composition of the n-type diffusion layer forming composition, and is not particularly limited to the above condition in the present invention.
  • the n-type diffusion layer forming composition applied on the substrate can be dried.
  • a step of heat-treating the substrate after the application of the n-type diffusion layer forming composition may be necessary.
  • the heat treatment is performed under the conditions of treatment at a temperature of 300 ° C. to 800 ° C. for 1 minute to 10 minutes.
  • a known continuous furnace, batch furnace or the like can be applied to this heat treatment.
  • both the heat treatment at a temperature of 80 ° C. to 300 ° C. and the heat treatment at a temperature of more than 300 ° C. and 800 ° C. or less are performed. (That is, the heat treatment is performed twice under different temperature conditions), or only the heat treatment at one of the temperatures may be used.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is limited to a method by conversion from an n-type diffusion layer to a p-type diffusion layer by aluminum.
  • any conventionally known method can be adopted, and the options for the manufacturing method are expanded. Therefore, for example, a composition containing a Group 13 element such as B (boron) can be applied to form the composition layer 13 and the p + -type diffusion layer 14 can be formed.
  • composition containing a Group 13 element such as B (boron) for example, a glass powder containing an acceptor element is used instead of a glass powder containing a donor element, and the composition is the same as that of the n-type diffusion layer forming composition.
  • a p-type diffusion layer forming composition may be mentioned.
  • the acceptor element may be an element belonging to Group 13, and examples thereof include B (boron), Al (aluminum), and Ga (gallium). Further, it is preferable that the glass powder containing acceptor element comprising at least one member selected from the group consisting of B 2 O 3, Al 2 O 3 and Ga 2 O 3.
  • the method for applying the p-type diffusion layer forming composition to the back surface of the silicon substrate is the same as the method for applying the n-type diffusion layer forming composition described above to the silicon substrate.
  • the p + -type diffusion layer 14 can be formed on the back surface by subjecting the p-type diffusion layer forming composition applied to the back surface to a thermal diffusion treatment similar to the thermal diffusion treatment in the n-type diffusion layer forming composition described later. it can.
  • the thermal diffusion treatment of the p-type diffusion layer forming composition is preferably performed simultaneously with the thermal diffusion treatment of the n-type diffusion layer forming composition.
  • the p-type semiconductor substrate 10 on which the n-type diffusion layer forming composition layer 11 is formed is subjected to thermal diffusion treatment.
  • the treatment temperature is preferably 800 ° C. to 1000 ° C., more preferably 850 ° C. to 980 ° C.
  • the treatment time is preferably 5 minutes to 60 minutes.
  • the donor element diffuses into the semiconductor substrate, and the n-type diffusion layer 12 is formed.
  • a known continuous furnace, batch furnace, or the like can be applied to the thermal diffusion treatment. Further, the furnace atmosphere during the thermal diffusion treatment can be appropriately adjusted to air, oxygen, nitrogen or the like.
  • a glass layer such as phosphate glass is formed on the surface of the formed n-type diffusion layer 12. For this reason, this phosphate glass is removed by etching.
  • etching any of known methods such as a method of immersing in an acid such as hydrofluoric acid and a method of immersing in an alkali such as caustic soda can be applied, and an etching treatment with hydrofluoric acid is preferable in terms of etching ability.
  • the immersion time is not particularly limited, and can be generally 0.5 to 30 minutes, preferably 1 to 10 minutes.
  • an n-type diffusion layer 12 is formed at a desired site, and an unnecessary n-type diffusion layer is formed on the back and side surfaces.
  • a side etching process for removing an unnecessary n-type diffusion layer formed on a side surface is essential. According to the manufacturing method of the invention, the side etching process is not required, and the process is simplified. As described above, a uniform n-type diffusion layer having a desired shape and a desired shape is formed in a short time by the manufacturing method of the present invention.
  • n-type diffusion layer formed on the back surface it is necessary to convert an unnecessary n-type diffusion layer formed on the back surface into a p-type diffusion layer.
  • a group 13 element is added to the n-type diffusion layer on the back surface.
  • a method is adopted in which an aluminum paste is applied and baked to diffuse aluminum into the n-type diffusion layer and convert it into a p-type diffusion layer.
  • conversion to the p-type diffusion layer is sufficient, and in order to form a high-concentration electric field layer of the p + -type diffusion layer, a certain amount of aluminum is required. There was a need to form.
  • the manufacturing method of the present invention since an unnecessary n-type diffusion layer is not formed on the back surface, it is not necessary to perform conversion from the n-type diffusion layer to the p-type diffusion layer, and the necessity of increasing the thickness of the aluminum layer is eliminated. . As a result, generation of internal stress and warpage in the silicon substrate can be suppressed. As a result, it is possible to suppress an increase in power loss and damage to the solar cell element.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is limited to a method by conversion from an n-type diffusion layer to a p-type diffusion layer with aluminum. Any method can be adopted without any problem, and the choice of manufacturing method is expanded.
  • a p-type diffusion layer forming composition configured in the same manner as the n-type diffusion layer forming composition is formed on the back surface (n).
  • the p + -type diffusion layer (high-concentration electric field layer) 14 is preferably formed on the back surface by applying to a surface opposite to the surface to which the mold diffusion layer-forming composition is applied and baking treatment.
  • the material used for the back electrode 20 is not limited to Group 13 aluminum.
  • Ag (silver) or Cu (copper) can be applied, and the thickness of the back electrode 20 is also conventional. It becomes possible to form thinner.
  • an antireflection film 16 is formed on the n-type diffusion layer 12.
  • the antireflection film 16 is formed by applying a known technique.
  • the antireflection film 16 is a silicon nitride film, it is formed by a plasma CVD method using a mixed gas of SiH 4 and NH 3 as a raw material. At this time, hydrogen diffuses into the crystal, and orbits that do not contribute to the bonding of silicon atoms, that is, dangling bonds and hydrogen are combined to inactivate defects (hydrogen passivation).
  • the mixed gas flow ratio NH 3 / SiH 4 is 0.05 to 1.0
  • the reaction chamber pressure is 13.3 Pa (0.1 Torr) to 266.6 Pa (2 Torr)
  • the temperature is 300 ° C. to 550 ° C. and the frequency for plasma discharge is 100 kHz or more.
  • a surface electrode metal paste is printed on the antireflection film 16 on the surface (light-receiving surface) by screen printing and dried to form a surface electrode metal paste layer 17.
  • the metal paste for a surface electrode contains (1) metal particles and (2) glass particles as essential components, and includes (3) a resin binder and (4) other additives as necessary.
  • a back electrode metal paste layer 19 is also formed on the p + -type diffusion layer 14 on the back surface.
  • the material and forming method of the back electrode metal paste layer 19 are not particularly limited.
  • the back electrode metal paste layer 19 may be formed by applying and drying a back electrode paste containing a metal such as aluminum, silver, or copper.
  • a silver paste for forming a silver electrode may be partially provided on the back surface for connection between solar cell elements in the module process.
  • the electrode metal paste layer 17 is fired to complete the solar cell element.
  • the antireflection film 16 that is an insulating film is melted by the glass particles contained in the electrode metal paste on the surface side, and part of the surface of the p-type semiconductor substrate 10
  • the metal particles for example, silver particles
  • the paste form a contact portion with the p-type semiconductor substrate 10 and solidify.
  • the formed surface electrode 18 and the p-type semiconductor substrate 10 are electrically connected. This is called fire-through.
  • the back electrode metal paste of the back electrode metal paste layer 19 is baked to form the back electrode 20.
  • FIG. 2 indicates a bus bar electrode, and 32 indicates a finger electrode.
  • the surface electrode 18 includes a bus bar electrode 30 and finger electrodes 32 intersecting with the bus bar electrode 30.
  • 2A is a plan view of a solar cell element in which the surface electrode 18 includes a bus bar electrode 30 and finger electrodes 32 intersecting with the bus bar electrode 30 as viewed from the surface.
  • FIG. 2B is a plan view of FIG. It is a perspective view which expands and shows a part of.
  • Such a surface electrode 18 can be formed, for example, by means such as screen printing of the above metal paste, plating of the electrode material, vapor deposition of the electrode material by electron beam heating in a high vacuum, or the like.
  • the surface electrode 18 composed of the bus bar electrode 30 and the finger electrode 32 is generally used as an electrode on the light receiving surface side and is well known, and it is possible to apply known forming means for the bus bar electrode and finger electrode on the light receiving surface side. it can.
  • the solar cell element in which the n-type diffusion layer is formed on the front surface, the p + -type diffusion layer is formed on the back surface, and the front surface electrode and the back surface electrode are further provided on the respective layers has been described.
  • a layer formation composition it is also possible to produce a back contact type solar cell element.
  • the back contact type solar cell element has all electrodes provided on the back surface to increase the area of the light receiving surface. That is, in the back contact type solar cell element, it is necessary to form both the n-type diffusion region and the p + -type diffusion region on the back surface to form a pn junction structure.
  • the n-type diffusion layer forming composition of the present invention can form an n-type diffusion site at a specific site, and can therefore be suitably applied to the production of a back contact type solar cell element.
  • the present invention includes the use of the n-type diffusion layer forming composition in the production of an n-type diffusion layer, and the formation of the n-type diffusion layer in the production of a solar cell element including the semiconductor substrate, the n-type diffusion layer, and an electrode.
  • Each use of the composition is also encompassed.
  • a uniform n-type can be formed in a desired shape in a specific region in a short time without forming an unnecessary n-type diffusion layer.
  • a diffusion layer can be obtained, and a solar cell element having such an n-type diffusion layer can be obtained without forming an unnecessary n-type diffusion layer.
  • Example 1 P 2 O 5 —SiO 2 —CaO glass (P 2 O 5 : 30 mol%, SiO 2 60 mol%, CaO 10 mol%) having a block shape and a volume average particle diameter of 0.89 ⁇ m 10 g of powder, 5 g of ethyl cellulose, and 85 g of terpineol were mixed and pasted using an automatic mortar kneader to prepare an n-type diffusion layer forming composition.
  • the viscosity of the obtained n-type diffusion layer forming composition was 61 Pa ⁇ s.
  • the particle shape of the glass was determined by observation using a TM-1000 scanning electron microscope manufactured by Hitachi High-Technologies Corporation.
  • the average particle size of the glass was calculated using a LS 13 320 type laser scattering diffraction particle size distribution analyzer (measurement wavelength: 632 nm) manufactured by Beckman Coulter, Inc.
  • the viscosity of the n-type diffusion layer forming composition is determined by using an E-type viscometer EHD type manufactured by Tokyo Keiki Co., Ltd. It is assumed that the measurement was performed under conditions of a sample amount of 0.4 ml and a rotation speed of rpm. Further, when the softening temperature of the glass was obtained from a differential heat (DTA) curve using a DTG-60H type differential heat / thermogravimetric measuring device manufactured by Shimadzu Corporation, it could be estimated to be around 800 ° C.
  • DTA differential heat
  • the prepared paste was applied to the surface of the p-type silicon substrate by screen printing, and dried on a hot plate at 150 ° C. for 5 minutes to form a layer. Subsequently, heat treatment was performed for 5 minutes in an electric furnace set at 500 ° C., and then heat diffusion treatment was performed for 10 minutes in another electric furnace for diffusion set at 950 ° C. Thereafter, in order to remove the glass layer, the substrate was immersed in hydrofluoric acid for 5 minutes, washed with running water and dried.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 45 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was not measurable above the measurement upper limit, and no n-type diffusion layer was formed.
  • the sheet resistance was measured at 25 ° C. by a four-probe method using a Loresta-EP MCP-T360 type low resistivity meter manufactured by Mitsubishi Chemical Corporation.
  • P 2 O 5 —SiO 2 —CaO glass (P 2 O 5 : 30 mol%, SiO 2 : 50 mol%, CaO: 20 mol%) having a block shape and a volume average particle diameter of 0.95 ⁇ m 10 g of powder, 5 g of ethyl cellulose, and 85 g of butyl carbitol acetate were mixed and pasted using an automatic mortar kneader to prepare an n-type diffusion layer forming composition.
  • the viscosity of the obtained n-type diffusion layer forming composition was 67 Pa ⁇ s.
  • the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 38 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was not measurable above the measurement upper limit, and no n-type diffusion layer was formed.
  • P 2 O 5 —SiO 2 —CaO-based glass having a substantially spherical particle shape and a volume average particle diameter of 1.02 ⁇ m P 2 O 5 : 40 mol%, SiO 2 : 40 mol%, CaO: 20 mol%) 10 g of powder, 5 g of ethyl cellulose, and 85 g of butyl carbitol acetate were mixed and pasted using an automatic mortar kneader to prepare an n-type diffusion layer forming composition.
  • the viscosity of the obtained n-type diffusion layer forming composition was 65 Pa ⁇ s.
  • the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes to form a layer. Subsequently, heat treatment was performed for 5 minutes in an electric furnace set at 500 ° C., and then heat diffusion treatment was performed for 10 minutes in another electric furnace for diffusion set at 950 ° C. Thereafter, in order to remove the glass layer, the substrate was immersed in hydrofluoric acid for 5 minutes, washed with running water and dried.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 35 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was not measurable above the measurement upper limit, and no n-type diffusion layer was formed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 51 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 60 ⁇ / ⁇ , and an n-type diffusion layer was also formed on the back surface.
  • a solution is prepared by mixing 1 g of ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ) powder, 7 g of pure water, 0.7 g of polyvinyl alcohol, and 1.5 g of isopropyl alcohol using an automatic mortar kneader. Then, an n-type diffusion layer composition was prepared. Next, the prepared solution was applied to the surface of the p-type silicon substrate by a spin coater (2000 rpm, 30 sec) and dried on a hot plate at 150 ° C. for 5 minutes to form a layer.
  • a spin coater 2000 rpm, 30 sec
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 43 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 55 ⁇ / ⁇ , and an n-type diffusion layer was also formed on the back surface.

Abstract

Une composition formant une couche de diffusion de type n comprend une poudre de verre contenant du P2O5, du SiO2 et du CaO, et un milieu de dispersion. Une couche de diffusion de type n et un élément de cellule photovoltaïque possédant une couche de diffusion de type n sont fabriqués en revêtant un substrat semi-conducteur avec ladite composition formant une couche de diffusion de type n et en réalisant un processus de diffusion thermique.
PCT/JP2012/068122 2011-07-19 2012-07-17 Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque WO2013011986A1 (fr)

Priority Applications (6)

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US14/233,704 US20150099352A1 (en) 2011-07-19 2012-07-17 COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, METHOD OF PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT
JP2012547355A JP5176159B1 (ja) 2011-07-19 2012-07-17 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
KR1020147004451A KR20140041865A (ko) 2011-07-19 2012-07-17 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
EP12814632.1A EP2743967A4 (fr) 2011-07-19 2012-07-17 Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque
KR1020147003094A KR101541660B1 (ko) 2011-07-19 2012-07-17 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
CN201280035500.8A CN103688341B (zh) 2011-07-19 2012-07-17 n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179360A (ja) * 2013-03-13 2014-09-25 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池素子の製造方法
JP2017045930A (ja) * 2015-08-28 2017-03-02 日立化成株式会社 ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013011986A1 (fr) * 2011-07-19 2013-01-24 日立化成工業株式会社 Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque
DE102013113123B4 (de) * 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
DE102013113108A1 (de) * 2013-11-27 2015-05-28 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000054341A1 (fr) * 1999-03-11 2000-09-14 Merck Patent Gmbh Pates de dopage pour la production de zones p, p+ et n, n+ dans des semiconducteurs
JP2002075894A (ja) 2000-09-01 2002-03-15 Sanken Electric Co Ltd 液状不純物源材料及びこれを使用した半導体装置の製造方法
JP4073968B2 (ja) 1997-05-30 2008-04-09 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 太陽電池及びその製造方法
WO2009116569A1 (fr) * 2008-03-21 2009-09-24 信越化学工業株式会社 Pâte de diffusion à base de phosphore et procédé de production d'une batterie solaire utilisant la pâte à base de phosphore
WO2010022030A2 (fr) * 2008-08-20 2010-02-25 Honeywell International Inc. Dopants contenant du phosphore et procédés pour former des régions dopées au phosphore dans des substrats semi-conducteurs utilisant lesdits dopants
WO2011024408A1 (fr) * 2009-08-27 2011-03-03 東京応化工業株式会社 Composition d'agent de diffusion, procédé de formation de couche de diffusion d'impuretés et cellule solaire
WO2011090216A1 (fr) * 2010-01-25 2011-07-28 日立化成工業株式会社 COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
WO2012067117A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire
WO2012067119A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL207969A (fr) * 1955-06-28
US6225392B1 (en) * 1996-05-15 2001-05-01 Asahi Glass Company Ltd. Conductive paste
US6849334B2 (en) * 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US6171987B1 (en) * 1997-12-29 2001-01-09 Ben-Gurion University Of The Negev Cadmium-free and lead-free glass compositions, thick film formulations containing them and uses thereof
US6611372B1 (en) * 2000-06-09 2003-08-26 The Arizona Board Of Regents On Behalf Of The University Of Arizona Erbium and ytterbium co-doped phosphate glass optical fiber amplifiers using short active fiber length
DE10141117A1 (de) * 2001-08-22 2003-03-13 Schott Glas Antimikrobielles Silicatglas und dessen Verwendung
DE60318517T2 (de) * 2002-04-24 2009-07-23 Central Glass Co., Ltd., Ube Bleifreies niedrigschmelzendes Glas
US7176152B2 (en) * 2004-06-09 2007-02-13 Ferro Corporation Lead-free and cadmium-free conductive copper thick film pastes
US7339780B2 (en) * 2004-06-09 2008-03-04 Ferro Corporation Copper termination inks containing lead free and cadmium free glasses for capacitors
US20060102228A1 (en) * 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts
US7943539B2 (en) * 2005-01-31 2011-05-17 Kabushiki Kaisha Ohara Glass-ceramics and method for manufacturing the same
JP2006294579A (ja) * 2005-03-17 2006-10-26 Fujitsu Ltd 突起体の製造方法
US7326367B2 (en) * 2005-04-25 2008-02-05 E.I. Du Pont De Nemours And Company Thick film conductor paste compositions for LTCC tape in microwave applications
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
US7771623B2 (en) * 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7718092B2 (en) * 2005-10-11 2010-05-18 E.I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
FR2906405B1 (fr) * 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
JP5166745B2 (ja) * 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
CN101675484B (zh) * 2007-05-09 2012-07-04 日立化成工业株式会社 导电体连接用部件、连接结构和太阳能电池组件
KR101248636B1 (ko) * 2007-05-09 2013-04-01 히타치가세이가부시끼가이샤 도전체의 접속 방법, 도전체 접속용 부재, 접속 구조 및 태양 전지 모듈
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
WO2009029738A1 (fr) * 2007-08-31 2009-03-05 Ferro Corporation Structure de contact en couches pour des cellules solaires
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
KR20090080756A (ko) * 2008-01-22 2009-07-27 삼성에스디아이 주식회사 감광성 페이스트 조성물, 이를 이용하여 제조된 플라즈마디스플레이 패널의 격벽 및 이를 포함하는 플라즈마디스플레이 패널
JP5522900B2 (ja) * 2008-02-22 2014-06-18 東京応化工業株式会社 電極形成用導電性組成物及び太陽電池の形成方法
US8158504B2 (en) * 2008-05-30 2012-04-17 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
TW201008889A (en) * 2008-06-06 2010-03-01 Du Pont Glass compositions used in conductors for photovoltaic cells
JP4754655B2 (ja) * 2008-08-07 2011-08-24 京都エレックス株式会社 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法
EP2417073A1 (fr) * 2009-04-09 2012-02-15 E. I. du Pont de Nemours and Company Compositions de verre utilisées dans des conducteurs pour des cellules photovoltaïques
JP5649290B2 (ja) * 2009-07-30 2015-01-07 株式会社ノリタケカンパニーリミテド 太陽電池電極用無鉛導電性組成物
US20110315210A1 (en) * 2009-12-18 2011-12-29 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110195541A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell
EP3070062A1 (fr) * 2010-05-04 2016-09-21 E. I. du Pont de Nemours and Company Pâtes à couches épaisses contenant des oxydes de plomb-tellure, et leur utilisation dans la fabrication de dispositifs à semi-conducteurs
US8404599B2 (en) * 2010-11-17 2013-03-26 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
US20120122265A1 (en) * 2010-11-17 2012-05-17 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
US20120325307A1 (en) * 2010-12-16 2012-12-27 E. I. Du Pont De Nemours And Company Low bow aluminum paste with an alkaline earth metal salt additive for solar cells
EP2688848A2 (fr) * 2011-03-24 2014-01-29 Ben-Gurion University of The Negev Research and Development Authority Revêtements pour applications solaires
WO2013011986A1 (fr) * 2011-07-19 2013-01-24 日立化成工業株式会社 Composition formant une couche de diffusion de type n, procédé de fabrication d'une couche de diffusion de type n et procédé de fabrication d'un élément de cellule photovoltaïque
EP2728624A4 (fr) * 2011-07-25 2015-05-27 Hitachi Chemical Co Ltd Substrat à semi-conducteur, son procédé de fabrication, élément de photopile et photopile
DE112012004085T5 (de) * 2011-09-29 2014-07-31 Noritake Co., Ltd. Bleifreie leitfähige Pastenzusammensetzung für Solarzellen
CN104137227B (zh) * 2012-02-23 2018-05-18 日立化成株式会社 n型扩散层形成用组合物、具有n型扩散层的半导体基板的制造方法及太阳能电池元件的制造方法
US20150155401A1 (en) * 2012-06-12 2015-06-04 Heraeus Precious Metals North America Conshohocken Llc Electroconductive paste with adhesion enhancer
KR101999795B1 (ko) * 2012-06-27 2019-07-12 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073968B2 (ja) 1997-05-30 2008-04-09 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 太陽電池及びその製造方法
WO2000054341A1 (fr) * 1999-03-11 2000-09-14 Merck Patent Gmbh Pates de dopage pour la production de zones p, p+ et n, n+ dans des semiconducteurs
JP2002075894A (ja) 2000-09-01 2002-03-15 Sanken Electric Co Ltd 液状不純物源材料及びこれを使用した半導体装置の製造方法
WO2009116569A1 (fr) * 2008-03-21 2009-09-24 信越化学工業株式会社 Pâte de diffusion à base de phosphore et procédé de production d'une batterie solaire utilisant la pâte à base de phosphore
WO2010022030A2 (fr) * 2008-08-20 2010-02-25 Honeywell International Inc. Dopants contenant du phosphore et procédés pour former des régions dopées au phosphore dans des substrats semi-conducteurs utilisant lesdits dopants
WO2011024408A1 (fr) * 2009-08-27 2011-03-03 東京応化工業株式会社 Composition d'agent de diffusion, procédé de formation de couche de diffusion d'impuretés et cellule solaire
WO2011090216A1 (fr) * 2010-01-25 2011-07-28 日立化成工業株式会社 COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
WO2012067117A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire
WO2012067119A1 (fr) * 2010-11-17 2012-05-24 日立化成工業株式会社 Procédé de fabrication d'une cellule solaire

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2743967A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179360A (ja) * 2013-03-13 2014-09-25 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池素子の製造方法
JP2017045930A (ja) * 2015-08-28 2017-03-02 日立化成株式会社 ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法

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JPWO2013011986A1 (ja) 2015-02-23
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JP5176159B1 (ja) 2013-04-03
TWI462157B (zh) 2014-11-21
EP3007210A3 (fr) 2016-04-20
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TWI575762B (zh) 2017-03-21
CN105489662A (zh) 2016-04-13
TW201306095A (zh) 2013-02-01
CN103688341B (zh) 2016-09-28
EP2743967A4 (fr) 2015-06-03
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