WO2011162394A1 - COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION D'IMPURETÉS, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE n, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE p, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE p, ET PROCÉDÉ DE FABRICATION D'ÉLÉMENTS DE CELLULE SOLAIRE - Google Patents

COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION D'IMPURETÉS, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE n, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE p, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE p, ET PROCÉDÉ DE FABRICATION D'ÉLÉMENTS DE CELLULE SOLAIRE Download PDF

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WO2011162394A1
WO2011162394A1 PCT/JP2011/064591 JP2011064591W WO2011162394A1 WO 2011162394 A1 WO2011162394 A1 WO 2011162394A1 JP 2011064591 W JP2011064591 W JP 2011064591W WO 2011162394 A1 WO2011162394 A1 WO 2011162394A1
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Prior art keywords
diffusion layer
type diffusion
forming composition
layer forming
glass
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PCT/JP2011/064591
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English (en)
Japanese (ja)
Inventor
鉄也 佐藤
吉田　誠人
野尻　剛
香 岡庭
洋一 町井
岩室　光則
木沢　桂子
修一郎 足立
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日立化成工業株式会社
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Priority claimed from JP2010144204A external-priority patent/JP5625538B2/ja
Priority claimed from JP2010144203A external-priority patent/JP5625537B2/ja
Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to CN2011800307885A priority Critical patent/CN102959684A/zh
Priority to KR1020127033323A priority patent/KR20130098180A/ko
Publication of WO2011162394A1 publication Critical patent/WO2011162394A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an n-type diffusion layer forming composition for a solar cell element, a method for producing an n-type diffusion layer, a p-type diffusion layer forming composition, a method for producing a p-type diffusion layer, and a method for producing a solar cell element. More specifically, a technique that enables an n-type diffusion layer to be formed in a specific portion of a silicon substrate that is a semiconductor substrate, and a reduction in internal stress of the silicon substrate that is a semiconductor substrate, and damage to grain boundaries.
  • the present invention relates to a technique for forming a p-type diffusion layer capable of suppressing the growth of crystal defects and suppressing warping.
  • a p-type silicon substrate having a textured structure formed on the light receiving surface is prepared so as to promote the light confinement effect, and then a donor element-containing compound such as phosphorus oxychloride (POCl 3 ), nitrogen, oxygen
  • a donor element-containing compound such as phosphorus oxychloride (POCl 3 ), nitrogen, oxygen
  • POCl 3 phosphorus oxychloride
  • the n-type diffusion layer is uniformly formed on the substrate by performing several tens of minutes at 800 ° C. to 900 ° C. in the mixed gas atmosphere.
  • phosphorus is diffused using a mixed gas
  • n-type diffusion layers are formed not only on the surface but also on the side surface and the back surface. Therefore, side etching is performed to remove the n-type diffusion layer on the side surface.
  • the n-type diffusion layer on the back surface needs to be converted into a p + -type diffusion layer, and an aluminum paste is applied on the n-type diffusion layer on the back surface, and this is baked. It was converted to a p + type diffusion layer.
  • the aluminum paste has a low electrical conductivity, and in order to reduce the sheet resistance, an aluminum layer usually formed on the entire back surface Must have a thickness of about 10 ⁇ m to 20 ⁇ m after firing. Furthermore, when a thick aluminum layer is formed in this way, the thermal expansion coefficient differs greatly between silicon and aluminum, so that a large internal stress is generated in the silicon substrate during the firing and cooling process, resulting in damage to the grain boundaries, In some cases, defects increased and warped.
  • n-type diffusion layer in the gas phase reaction using phosphorus oxychloride, not only one side (usually the light receiving surface or the surface) that originally requires the n-type diffusion layer but also the other side An n-type diffusion layer is also formed on the surface (non-light-receiving surface or back surface) and side surfaces. Further, even in the method of applying a solution containing phosphate and thermally diffusing, an n-type diffusion layer is formed on the surface other than the surface as in the gas phase reaction method. Therefore, in order to have a pn junction structure as an element, it is necessary to perform etching on the side surface and convert the n-type diffusion layer to the p-type diffusion layer on the back surface. In general, an aluminum paste which is a Group 13 element is applied to the back surface and fired to convert the n-type diffusion layer into a p-type diffusion layer.
  • the present invention has been made in view of the above-described conventional problems, and in a manufacturing process of a solar cell element using a silicon substrate, a specific portion can be formed in a short time without forming an unnecessary n-type diffusion layer. It is an object to provide an n-type diffusion layer forming composition capable of forming an n-type diffusion layer, a method for producing an n-type diffusion layer, and a method for producing a solar cell element.
  • the present invention provides a p-type diffusion layer capable of forming a p-type diffusion layer in a short time while suppressing the occurrence of internal stress and substrate warpage in the silicon substrate in the manufacturing process of a solar cell element using a silicon substrate.
  • An object is to provide a composition for forming a diffusion layer, a method for manufacturing p-type diffusion, and a method for manufacturing a solar cell element.
  • An impurity diffusion layer forming composition comprising glass powder containing a donor element or acceptor element and a dispersion medium, wherein the content ratio of the glass powder is in the range of 1% by mass to 90% by mass.
  • n-type diffusion layer forming composition according to ⁇ 2> wherein the donor element is at least one selected from P (phosphorus) and Sb (antimony).
  • the glass powder containing the donor element includes at least one donor element-containing material selected from P 2 O 3 , P 2 O 5 and Sb 2 O 3 , and SiO 2 , K 2 O, and Na 2 O.
  • ⁇ 2> containing at least one glass component material selected from Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 , and MoO 3
  • n-type diffusion layer forming composition according to any one of ⁇ 2> to ⁇ 4>, further comprising at least one metal selected from Ag, Si, Cu, Fe, Zn, and Mn. .
  • An n-type diffusion comprising a step of applying the n-type diffusion layer forming composition according to any one of ⁇ 2> to ⁇ 6> on a semiconductor substrate and a step of performing a thermal diffusion treatment.
  • Layer manufacturing method
  • ⁇ 8> A step of applying the n-type diffusion layer forming composition according to any one of ⁇ 2> to ⁇ 6> above on a semiconductor substrate and a thermal diffusion treatment to form an n-type diffusion layer
  • the manufacturing method of the solar cell element which has a process and the process of forming an electrode on the formed n type diffused layer.
  • a p-type diffusion layer forming composition comprising glass powder containing an acceptor element and a dispersion medium, wherein the glass powder content is in the range of 1% by mass to 90% by mass.
  • the acceptor element-containing glass powder is at least one acceptor element-containing material selected from B 2 O 3 , Al 2 O 3, and Ga 2 O 3 , and SiO 2 , K 2 O, and Na 2 O. And at least one glass component material selected from Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl 2 O, SnO, ZrO 2 , and MoO 3.
  • a p-type diffusion comprising a step of applying the p-type diffusion layer forming composition according to any one of ⁇ 9> to ⁇ 11> on a semiconductor substrate and a step of performing a thermal diffusion treatment.
  • Layer manufacturing method
  • ⁇ 13> A step of applying the p-type diffusion layer forming composition according to any one of ⁇ 9> to ⁇ 11> on a semiconductor substrate and a thermal diffusion treatment to form a p-type diffusion layer And a step of forming an electrode on the formed p-type diffusion layer.
  • n-type diffusion layer in a specific portion in a short time without forming an unnecessary n-type diffusion layer in a manufacturing process of a solar cell element using a silicon substrate.
  • a p-type diffusion layer in the manufacturing process of a solar cell element using a silicon substrate, it is possible to form a p-type diffusion layer in a short time while suppressing internal stress in the silicon substrate and warping of the substrate. Become.
  • the present invention is an impurity diffusion layer forming composition
  • a glass powder containing a donor element or an acceptor element and a dispersion medium wherein the content ratio of the glass powder is in the range of 1% by mass to 90% by mass.
  • the impurity diffusion layer forming composition is an n-type diffusion layer forming composition
  • the glass powder contains a donor element
  • the impurity diffusion layer forming composition is a p-type diffusion layer forming composition
  • the glass powder contains an acceptor element.
  • the content of the glass powder contained in the n-type diffusion layer forming composition and the p-type diffusion layer forming composition is 1% by mass or more and 90% by mass or less, on the n-type diffusion layer or the p-type diffusion layer
  • the formed glass layer can be removed in a short time.
  • the n-type diffusion layer or the p-type diffusion layer is sufficiently formed by the diffusion of the donor element or the acceptor element. Therefore, according to the n-type diffusion layer forming composition and the p-type diffusion layer forming composition of the present invention, an n-type diffusion layer or a p-type diffusion layer can be formed in a specific portion in a short time.
  • an n-type diffusion layer forming composition and a p-type diffusion layer forming composition of the present invention will be described, and then an n-type diffusion layer manufacturing method using the n-type diffusion layer forming composition, p-type diffusion layer forming composition
  • a method for manufacturing a p-type diffusion layer using a solar cell and a method for manufacturing a solar cell element will be described.
  • the term “process” is not limited to an independent process, and even if it cannot be clearly distinguished from other processes, the term “process” is used if the intended action of the process is achieved. included.
  • “to” indicates a range including the numerical values described before and after the minimum and maximum values, respectively.
  • the n-type diffusion layer forming composition of the present invention contains a glass powder containing at least a donor element (hereinafter sometimes simply referred to as “glass powder”) and a dispersion medium, and further considers coating properties and the like. Other additives may be contained as necessary.
  • the n-type diffusion layer forming composition contains a glass powder containing a donor element, and is a material capable of forming an n-type diffusion layer by thermally diffusing this donor element after being applied to a silicon substrate.
  • an n-type diffusion layer is formed at a desired site, and an unnecessary n-type diffusion layer is not formed on the back surface or side surface.
  • the composition for forming an n-type diffusion layer of the present invention is applied, the side etching step that is essential in the gas phase reaction method that has been widely employed is not necessary, and the process is simplified.
  • the step of converting the n-type diffusion layer formed on the back surface into the p + -type diffusion layer is not necessary. Therefore, the method for forming the p + -type diffusion layer on the back surface and the material, shape, and thickness of the back electrode are not limited, and the choice of manufacturing method, material, and shape to be applied is widened. Although details will be described later, generation of internal stress in the silicon substrate due to the thickness of the back electrode is suppressed, and warpage of the silicon substrate is also suppressed.
  • the glass powder contained in the n-type diffusion layer forming composition of the present invention is melted by firing to form a glass layer on the n-type diffusion layer.
  • a glass layer is formed on the n-type diffusion layer in the conventional gas phase reaction method and the method of applying a phosphate-containing solution, and thus the glass layer produced in the present invention is the same as the conventional method. Further, it can be removed by etching. Therefore, the n-type diffusion layer forming composition of the present invention does not generate unnecessary products and does not increase the number of steps as compared with the conventional method.
  • the content of the glass powder contained in the n-type diffusion layer forming composition is 1% by mass or more and 90% by mass or less, the glass layer formed on the n-type diffusion layer is removed in a short time. it can. Further, the n-type diffusion layer is sufficiently formed by the diffusion of the donor element.
  • the time required for “forming the n-type diffusion layer” in the present invention is the total time required for forming the n-type diffusion layer and removing the glass layer formed on the n-type diffusion layer. Say. Therefore, the time for forming the n-type diffusion layer is shortened by removing the glass layer formed on the n-type diffusion layer in a short time.
  • the donor component of the glass powder is difficult to volatilize even during firing, the formation of an n-type diffusion layer not only on the surface but also on the back surface and side surfaces due to the generation of the volatilizing gas is suppressed.
  • the reason for this is considered that the donor component is bonded to an element in the glass powder or is taken into the glass, so that it is difficult to volatilize.
  • the n-type diffusion layer forming composition of the present invention can form an n-type diffusion layer having a desired concentration at a desired site, a selective region having a high n-type dopant concentration is formed. It becomes possible to form. On the other hand, it is generally difficult to form a selective region having a high n-type dopant concentration by a gas phase reaction method, which is a general method of an n-type diffusion layer, or a method using a phosphate-containing solution. .
  • a donor element is an element that can form an n-type diffusion layer by doping into a silicon substrate.
  • a Group 15 element can be used, and examples thereof include P (phosphorus), Sb (antimony), Bi (bismuth), As (arsenic), and the like. From the viewpoints of safety, ease of vitrification, etc., P or Sb is preferred.
  • Examples of the donor element-containing material used for introducing the donor element into the glass powder include P 2 O 3 , P 2 O 5 , Sb 2 O 3 , Bi 2 O 3 and As 2 O 3 , and P 2 O 3 It is preferable to use at least one selected from P 2 O 5 and Sb 2 O 3 .
  • the glass powder containing a donor element can control a melting temperature, a softening temperature, a glass transition temperature, chemical durability, etc. by adjusting a component ratio as needed. Furthermore, it is preferable to contain the glass component substance described below.
  • glass component materials include SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 , MoO 3 , La 2 O 3 , Examples include Nb 2 O 5 , Ta 2 O 5 , Y 2 O 3 , TiO 2 , ZrO 2 , GeO 2 , TeO 2, and Lu 2 O 3, and include SiO 2 , K 2 O, Na 2 O, Li 2 O. It is preferable to use at least one selected from BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 , and MoO 3
  • the glass powder containing a donor element include a system containing both the donor element-containing substance and the glass component substance, and a P 2 O 5 -SiO 2 system (in order of donor element-containing substance-glass component substance). in described, the same applies hereinafter), P 2 O 5 -K 2 O based, P 2 O 5 -Na 2 O-based, P 2 O 5 -Li 2 O system, P 2 O 5 -BaO-based, P 2 O 5 - SrO-based, P 2 O 5 -CaO-based, P 2 O 5 -MgO-based, P 2 O 5 -BeO based, P 2 O 5 -ZnO-based, P 2 O 5 -CdO based, P 2 O 5 -PbO system , including P 2 O 5 -V 2 O 5 system, P 2 O 5 -SnO-based, P 2 O 5 -GeO 2 system, a P 2 O 5 as a donor element-containing material of P 2
  • a donor element-containing material is used instead of P 2 O 5 in a system containing P 2 O 5 .
  • glass powder of a system containing Sb 2 O 3 instead of P 2 O 5 in a system containing P 2 O 5 , a donor element-containing material is used.
  • glass powder of a system containing Sb 2 O 3 a glass powder containing two or more kinds of donor element-containing substances, such as a P 2 O 5 —Sb 2 O 3 system and a P 2 O 5 —As 2 O 3 system, may be used.
  • a composite glass containing two components is exemplified, but glass powder containing three or more components such as P 2 O 5 —SiO 2 —V 2 O 5 and P 2 O 5 —SiO 2 —CaO may be used.
  • the content ratio of the glass component substance in the glass powder is preferably set as appropriate in consideration of the melting temperature, the softening temperature, the glass transition temperature, and the chemical durability, and is generally 0.1% by mass to 95% by mass. It is preferable that it is 0.5 mass% or more and 90 mass% or less.
  • the softening temperature of the glass powder is preferably 200 ° C. to 1000 ° C., more preferably 300 ° C. to 900 ° C., from the viewpoints of diffusibility during the diffusion treatment and dripping.
  • the shape of the glass powder examples include a substantially spherical shape, a flat shape, a block shape, a plate shape, a scale shape, and the like. From the viewpoint of the application property to the substrate and the uniform diffusibility when it is an n-type diffusion layer forming composition, It is desirable to have a substantially spherical shape, a flat shape, or a plate shape.
  • the particle size of the glass powder is desirably 100 ⁇ m or less. When glass powder having a particle size of 100 ⁇ m or less is used, a smooth coating film is easily obtained. Furthermore, the particle size of the glass powder is more desirably 50 ⁇ m or less. The lower limit is not particularly limited, but is preferably 0.01 ⁇ m or more.
  • the particle diameter of glass represents an average particle diameter, and can be measured by a laser scattering diffraction particle size distribution measuring apparatus or the like.
  • the glass powder containing a donor element is produced by the following procedure.
  • raw materials for example, the donor element-containing material and the glass component material are weighed and filled in a crucible.
  • the material for the crucible include platinum, platinum-rhodium, iridium, alumina, quartz, carbon, and the like, and are appropriately selected in consideration of the melting temperature, atmosphere, reactivity with the molten material, and the like.
  • it heats with the temperature according to a glass composition with an electric furnace, and is set as a melt. At this time, it is desirable to stir the melt uniformly.
  • the obtained melt is poured onto a zirconia substrate, a carbon substrate or the like to vitrify the melt.
  • the glass is crushed into powder.
  • a known method such as a jet mill, a bead mill, or a ball mill can be applied to the pulverization.
  • the content ratio of the glass powder containing the donor element in the n-type diffusion layer forming composition is 1% by mass or more and 90% by mass or less from the viewpoints of coatability, donor element diffusibility, unnecessary glass etching properties, and the like. 5 mass% or more and 70 mass% or less are desirable, and 10 mass% or more and 30 mass% or less are more desirable from a viewpoint of showing the sufficiently low surface resistance and the immersion time which does not damage a board
  • the content ratio of the glass powder exceeds 90% by mass, it becomes difficult to etch unnecessary glass components.
  • the content ratio of the glass powder is less than 1% by mass, the diffusibility and coating property of the donor to the substrate are lowered.
  • the content of the donor element-containing substance in the n-type diffusion layer forming composition is preferably 1% by mass or more, and preferably 2% by mass or more. More preferred. Even if a certain amount or more of the donor element is added to the n-type diffusion layer forming composition, the sheet resistance of the surface having the formed n-type diffusion layer does not decrease to a certain value or more.
  • the dispersion medium is a medium in which the glass powder is dispersed in the composition. Specifically, a binder, a solvent, or the like is employed as the dispersion medium.
  • binder examples include polyvinyl alcohol, polyacrylamides, polyvinylamides, polyvinylpyrrolidone, polyethylene oxides, polysulfonic acid, acrylamide alkylsulfonic acid, cellulose ethers, cellulose derivatives, carboxymethyl cellulose, hydroxyethyl cellulose, ethyl cellulose, gelatin, starch And starch derivatives, sodium alginates, xanthan, gua and gua derivatives, scleroglucan and scleroglucan derivatives, tragacanth and tragacanth derivatives, dextrin and dextrin derivatives, (meth) acrylic acid resins, (meth) acrylic acid ester resins (e.g.
  • Alkyl (meth) acrylate resins Alkyl (meth) acrylate resins, dimethylaminoethyl (meth) acrylate resins, etc.), butadiene Fat, styrene resins and copolymers thereof, as well as appropriately selected and siloxane resin. These are used singly or in combination of two or more.
  • the molecular weight of the binder is not particularly limited, and it is desirable to adjust appropriately in view of the desired viscosity as the composition.
  • the solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-iso-propyl ketone, methyl-n-butyl ketone, methyl-iso-butyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, Ketone solvents such as diethyl ketone, dipropyl ketone, di-iso-butyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, ⁇ -butyrolactone, ⁇ -valerolactone , Diethyl ether, methyl ethyl ether, methyl-n-propyl ether, di-iso-propyl ether, tetrahydrofuran, methyltetrahydrofur
  • the content ratio of the dispersion medium in the n-type diffusion layer forming composition is determined in consideration of applicability and donor concentration.
  • the viscosity of the n-type diffusion layer forming composition is preferably 10 mPa ⁇ S or more and 1000000 mPa ⁇ S or less, more preferably 50 mPa ⁇ S or more and 500000 mPa ⁇ S or less in consideration of applicability.
  • the n-type diffusion layer forming composition may contain other additives.
  • other additives include metals that easily react with the glass powder.
  • the n-type diffusion layer forming composition is applied on a semiconductor substrate and heat-treated at a high temperature to form an n-type diffusion layer. At that time, glass is formed on the surface. This glass is removed by dipping in an acid such as hydrofluoric acid, but some glass is difficult to remove depending on the type of glass. In that case, the glass can be easily removed after the acid cleaning by adding a metal such as Ag, Mn, Cu, Fe, Zn, or Si. Among these, it is preferable to use at least one selected from Ag, Si, Cu, Fe, Zn and Mn, more preferable to use at least one selected from Ag, Si and Zn. It is particularly preferred.
  • the content ratio of the metal is desirably adjusted as appropriate depending on the type of glass and the type of the metal, and is generally 0.01% by mass or more and 10% by mass or less with respect to the glass powder.
  • the said metal can be used with forms, such as a metal simple substance and a metal oxide.
  • the p-type diffusion layer forming composition of the present invention contains a glass powder containing at least an acceptor element (hereinafter sometimes simply referred to as “glass powder”) and a dispersion medium, and further considers coating properties and the like. Other additives may be contained as necessary.
  • the p-type diffusion layer forming composition contains a glass powder containing an acceptor element.
  • the acceptor element is thermally diffused (baked) after being applied to a silicon substrate, thereby thermally diffusing the acceptor element to p-type diffusion.
  • a material capable of forming a layer is
  • the p + -type diffusion layer forming step and the ohmic contact forming step can be separated, and the choice of electrode material for forming the ohmic contact is widened.
  • the options also expand. For example, if a low resistance material such as silver is used for the electrode, a low resistance can be achieved with a thin film thickness.
  • the electrodes need not be formed on the entire surface, and may be partially formed like a comb shape. As described above, by forming a partial shape such as a thin film or a comb shape, it is possible to form a p-type diffusion layer while suppressing the occurrence of internal stress in the silicon substrate and warping of the substrate.
  • the p-type diffusion layer forming composition of the present invention is applied, a conventionally widely employed method, that is, printing an aluminum paste and firing it to turn the n-type diffusion layer into a p + -type diffusion layer.
  • a conventionally widely employed method that is, printing an aluminum paste and firing it to turn the n-type diffusion layer into a p + -type diffusion layer.
  • the internal stress in the substrate and the warpage of the substrate that are generated by the method of obtaining the ohmic contact are suppressed.
  • the acceptor component in the glass powder is not easily volatilized even during firing, the formation of a p-type diffusion layer other than the desired region due to the generation of the volatilizing gas is suppressed. The reason for this is considered that the acceptor component is bonded to an element in the glass powder or is taken into the glass, so that it is difficult to volatilize.
  • the content of the glass powder contained in the p-type diffusion layer forming composition is 1% by mass or more and 90% by mass or less
  • the glass layer on the p-type diffusion layer formed by firing the glass powder is shortened. Etching can be removed in time.
  • the p-type diffusion layer is sufficiently formed by the diffusion of the acceptor element.
  • the time required for “forming the p-type diffusion layer” in the present invention is the total time required for forming the p-type diffusion layer and removing the glass layer formed on the p-type diffusion layer. Say. Therefore, the time for forming the p-type diffusion layer is shortened by removing the glass layer formed on the p-type diffusion layer in a short time.
  • An acceptor element is an element that can form a p-type diffusion layer by doping into a silicon substrate.
  • a Group 13 element can be used, and examples thereof include B (boron), Al (aluminum), and Ga (gallium).
  • acceptor element-containing material used for introducing the acceptor element into the glass powder examples include B 2 O 3 , Al 2 O 3 , and Ga 2 O 3 , and B 2 O 3 , Al 2 O 3, and Ga 2 O. It is preferable to use at least one selected from 3 .
  • the glass powder containing an acceptor element can control a melting temperature, a softening temperature, a glass transition temperature, chemical durability, etc. by adjusting a component ratio as needed. Furthermore, it is preferable to contain the components described below.
  • glass component materials include SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl 2 O, SnO, ZrO 2 , MoO 3 , La 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , Y 2 O 3 , TiO 2 , GeO 2 , TeO 2, and Lu 2 O 3, and the like can be mentioned.
  • SiO 2 , K 2 O, Na 2 O, Li 2 It is preferable to use at least one selected from O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl 2 O, SnO, ZrO 2 , and MoO 3 .
  • the glass powder containing an acceptor element include a system containing both the acceptor element-containing substance and the glass component substance, and a B 2 O 3 —SiO 2 system (in order of acceptor element-containing substance—glass component substance). And the same applies hereinafter), B 2 O 3 —ZnO system, B 2 O 3 —PbO system, B 2 O 3 single system, etc., a system containing B 2 O 3 as an acceptor element-containing substance, Al 2 O 3 —SiO Glasses such as a system containing Al 2 O 3 as the acceptor element-containing material such as a 2 system and a system containing Ga 2 O 3 as the acceptor element containing material such as a Ga 2 O 3 —SiO 2 system can be given.
  • a glass powder containing two or more kinds of acceptor element-containing materials such as Al 2 O 3 —B 2 O 3 series, Ga 2 O 3 —B 2 O 3 series, etc. may be used.
  • acceptor element-containing materials such as Al 2 O 3 —B 2 O 3 series, Ga 2 O 3 —B 2 O 3 series, etc.
  • a single component glass or a composite glass containing two components is exemplified, but three or more types of composite glasses such as B 2 O 3 —SiO 2 —Na 2 O may be used as necessary.
  • the content ratio of the glass component substance in the glass powder is preferably set as appropriate in consideration of the melting temperature, the softening temperature, the glass transition temperature, and the chemical durability, and is generally 0.1% by mass to 95% by mass. It is preferable that it is 0.5 mass% or more and 90 mass% or less.
  • the softening temperature of the glass powder is preferably 200 ° C. to 1000 ° C., more preferably 300 ° C. to 900 ° C., from the viewpoints of diffusibility during the diffusion treatment and dripping.
  • the shape of the glass powder examples include a substantially spherical shape, a flat shape, a block shape, a plate shape, a scale shape, and the like. From the viewpoint of applicability to a substrate and uniform diffusibility when a p-type diffusion layer forming composition is used. It is desirable to have a substantially spherical shape, flat shape, or plate shape.
  • the particle size of the glass powder is desirably 50 ⁇ m or less. When glass powder having a particle size of 50 ⁇ m or less is used, a smooth coating film is easily obtained. Further, the particle size of the glass powder is more preferably 10 ⁇ m or less. The lower limit is not particularly limited, but is preferably 0.01 ⁇ m or more.
  • the particle diameter of glass represents an average particle diameter, and can be measured by a laser scattering diffraction particle size distribution measuring apparatus or the like.
  • the glass powder containing an acceptor element is produced by the following procedure. First, weigh the ingredients and fill the crucible. Examples of the material for the crucible include platinum, platinum-rhodium, iridium, alumina, quartz, carbon, and the like, and are appropriately selected in consideration of the melting temperature, atmosphere, reactivity with the molten material, and the like. Next, it heats with the temperature according to a glass composition with an electric furnace, and is set as a melt. At this time, it is desirable to stir the melt uniformly. Subsequently, the obtained melt is poured onto a zirconia substrate, a carbon substrate or the like to vitrify the melt. Finally, the glass is crushed into powder. A known method such as a jet mill, a bead mill, or a ball mill can be applied to the pulverization.
  • the content ratio of the glass powder containing the acceptor element in the p-type diffusion layer forming composition is 1% by mass or more and 90% by mass or less from the viewpoints of coatability, acceptor element diffusibility, unnecessary glass etching properties, and the like. 5 mass% or more and 70% mass% or less are desirable, and 10 mass% or more and 30 mass% or less are more desirable from a viewpoint of showing the sufficiently low surface resistance and the immersion time which does not damage a board
  • the glass content is 90% by mass or more, it becomes difficult to etch unnecessary glass components.
  • the content ratio of the glass powder is less than 1% by mass, the diffusibility and coating property of the acceptor element to the substrate are lowered.
  • the content of the acceptor element-containing substance in the p-type diffusion layer forming composition is preferably 1% by mass or more, and preferably 2% by mass or more. More preferred. Even if an acceptor element is added in a certain amount or more to the p-type diffusion layer forming composition, the sheet resistance of the surface having the formed p-type diffusion layer does not decrease to a certain value or more.
  • the dispersion medium in the p-type diffusion layer forming composition As the dispersion medium in the p-type diffusion layer forming composition, the same dispersion medium as in the n-type diffusion layer forming composition can be used, and the preferred range is also the same.
  • the content ratio of the dispersion medium in the p-type diffusion layer forming composition is determined in consideration of applicability and acceptor concentration.
  • the viscosity of the p-type diffusion layer forming composition is preferably 10 mPa ⁇ S or more and 1000000 mPa ⁇ S or less, more preferably 50 mPa ⁇ S or more and 500000 mPa ⁇ S or less in consideration of applicability.
  • FIG. 1 is a schematic cross-sectional view conceptually showing an example of the manufacturing process of the solar cell element of the present invention.
  • common constituent elements are denoted by the same reference numerals.
  • an alkaline solution is applied to a silicon substrate which is a p-type semiconductor substrate 10 to remove a damaged layer, and a texture structure is obtained by etching.
  • a texture structure is obtained by etching.
  • the damaged layer on the silicon surface generated when slicing from the ingot is removed with 20% by mass caustic soda.
  • etching is performed with a mixed solution of 1% by mass caustic soda and 10% by mass isopropyl alcohol to form a texture structure (the description of the texture structure is omitted in the figure).
  • a texture structure on the light receiving surface (surface) side, a light confinement effect is promoted, and high efficiency is achieved.
  • the n-type diffusion layer forming composition layer 11 is formed by applying the n-type diffusion layer forming composition to the surface of the p-type semiconductor substrate 10, that is, the surface that becomes the light receiving surface.
  • the coating method is not limited, and examples thereof include a printing method, a spin method, a brush coating, a spray method, a doctor blade method, a roll coater method, and an ink jet method.
  • the coating amount of the n-type diffusion layer forming composition is not particularly limited.
  • the glass powder amount can be 0.001 g / m 2 to 1 g / m 2, and 0.015 g / m 2 to 0. .15 g / m 2 is preferred.
  • a drying step for volatilizing the solvent contained in the composition may be necessary after coating.
  • drying is performed at a temperature of about 80 ° C. to 300 ° C. for about 1 to 10 minutes when using a hot plate, and about 10 to 30 minutes when using a dryer or the like.
  • the drying conditions depend on the solvent composition of the n-type diffusion layer forming composition, and are not particularly limited to the above conditions in the present invention.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is limited to a method by conversion from an n-type diffusion layer to a p-type diffusion layer with aluminum. Therefore, any conventionally known method can be adopted, and the options of the manufacturing method are expanded. Therefore, for example, the high-concentration electric field layer 14 can be formed by applying the composition 13 containing a Group 13 element such as B (boron).
  • the semiconductor substrate 10 on which the n-type diffusion layer forming composition layer 11 is formed is subjected to thermal diffusion treatment at 600 ° C. to 1200 ° C.
  • thermal diffusion treatment As shown in FIG. 1C, the donor element diffuses into the semiconductor substrate, and the n-type diffusion layer 12 is formed.
  • a known continuous furnace, batch furnace, or the like can be applied to the thermal diffusion treatment. Further, the furnace atmosphere during the thermal diffusion treatment can be appropriately adjusted to air, oxygen, nitrogen or the like.
  • the thermal diffusion treatment time can be appropriately selected according to the content of the donor element contained in the n-type diffusion layer forming composition. For example, it can be 1 minute to 60 minutes, more preferably 2 minutes to 30 minutes.
  • a glass layer such as phosphate glass is formed on the surface of the formed n-type diffusion layer 12, this phosphate glass is removed by etching.
  • etching a known method such as a method of immersing in an acid such as hydrofluoric acid or a method of immersing in an alkali such as caustic soda can be applied.
  • the n-type diffusion layer 12 is formed using the n-type diffusion layer forming composition 11 of the present invention shown in FIGS.
  • the n-type diffusion layer 12 is formed, and no unnecessary n-type diffusion layer is formed on the back surface or the side surface. Therefore, in the conventional method of forming an n-type diffusion layer by a gas phase reaction method, a side etching process for removing an unnecessary n-type diffusion layer formed on a side surface is essential. According to the manufacturing method of the invention, the side etching process is not required, and the process is simplified.
  • n-type diffusion layer formed on the back surface it is necessary to convert an unnecessary n-type diffusion layer formed on the back surface into a p-type diffusion layer.
  • a group 13 element is added to the n-type diffusion layer on the back surface.
  • a method is adopted in which an aluminum paste is applied and baked to diffuse aluminum into the n-type diffusion layer and convert it into a p-type diffusion layer.
  • an aluminum amount of a certain amount or more is required in order to sufficiently convert to the p-type diffusion layer and to form a high concentration electric field layer of p + layer. Therefore, the aluminum layer is formed thick. There was a need.
  • n-type diffusion layer since an unnecessary n-type diffusion layer is not formed on the back surface, it is not necessary to perform conversion from the n-type diffusion layer to the p-type diffusion layer, and the necessity of increasing the thickness of the aluminum layer is eliminated. . As a result, generation of internal stress and warpage in the silicon substrate can be suppressed. As a result, it is possible to suppress an increase in power loss and damage to the element.
  • the manufacturing method of the p + -type diffusion layer (high concentration electric field layer) 14 on the back surface is limited to a method by conversion from an n-type diffusion layer to a p-type diffusion layer with aluminum. Therefore, any conventionally known method can be adopted, and the options of the manufacturing method are expanded.
  • a p + -type diffusion layer may be formed using the p-type diffusion layer forming composition of the present invention.
  • the material used for the back surface electrode 20 is not limited to Group 13 aluminum, and for example, Ag (silver), Cu (copper), or the like can be applied. In addition, it can be formed thinner than the conventional one.
  • an antireflection film 16 is formed on the n-type diffusion layer 12.
  • the antireflection film 16 is formed by applying a known technique.
  • the antireflection film 16 is a silicon nitride film, it is formed by a plasma CVD method using a mixed gas of SiH 4 and NH 3 as a raw material. At this time, hydrogen diffuses into the crystal, and orbits that do not contribute to the bonding of silicon atoms, that is, dangling bonds and hydrogen are combined to inactivate defects (hydrogen passivation).
  • the mixed gas flow ratio NH 3 / SiH 4 is 0.05 to 1.0
  • the reaction chamber pressure is 13.3 Pa (0.1 Torr) to 266.6 Pa (2 Torr)
  • the temperature is 300 ° C. to 550 ° C. and the frequency for plasma discharge is 100 kHz or more.
  • a surface electrode metal paste is printed, applied and dried by a screen printing method on the antireflection film 16 on the surface (light receiving surface) to form the surface electrode 18.
  • the metal paste for a surface electrode contains (1) metal particles and (2) glass particles as essential components, and includes (3) a resin binder and (4) other additives as necessary.
  • the back electrode 20 is also formed on the high-concentration electric field layer 14 on the back surface.
  • the material and forming method of the back electrode 20 are not particularly limited.
  • the back electrode 20 may be formed by applying and drying a back electrode paste containing a metal such as aluminum, silver, or copper.
  • a silver paste for forming a silver electrode may be partially provided on the back surface for connection between elements in the module process.
  • the electrode is fired to complete the solar cell element.
  • the antireflection film 16 as an insulating film is melted by the glass particles contained in the electrode metal paste on the surface side, and the silicon 10 surface is also partially melted.
  • the metal particles (for example, silver particles) in the paste form a contact portion with the silicon substrate 10 and solidify. Thereby, the formed surface electrode 18 and the silicon substrate 10 are electrically connected. This is called fire-through.
  • FIG. 2A is a plan view of a solar cell element in which the surface electrode 18 includes a bus bar electrode 30 and a finger electrode 32 intersecting with the bus bar electrode 30 as viewed from the surface.
  • FIG. 2B is a perspective view showing a part of FIG.
  • Such a surface electrode 18 can be formed, for example, by means such as screen printing of the above-described metal paste, plating of the electrode material, or vapor deposition of the electrode material by electron beam heating in a high vacuum.
  • the surface electrode 18 composed of the bus bar electrode 30 and the finger electrode 32 is generally used as an electrode on the light receiving surface side and is well known, and it is possible to apply known forming means for the bus bar electrode and finger electrode on the light receiving surface side. it can.
  • tens of minutes of treatment is performed at 800 ° C. to 900 ° C. in a mixed gas atmosphere of phosphorus oxychloride (POCl 3 ), nitrogen, and oxygen to uniformly form an n-type diffusion layer.
  • a mixed gas atmosphere of phosphorus oxychloride (POCl 3 ), nitrogen, and oxygen to uniformly form an n-type diffusion layer.
  • the diffusion of phosphorus extends to the side surface and the back surface, and the n-type diffusion layer is formed not only on the surface but also on the side surface and the back surface. Therefore, side etching is performed to remove the n-type diffusion layer on the side surface.
  • the p-type diffusion layer forming composition is applied onto the n-type diffusion layer on the back surface of the p-type semiconductor substrate, that is, the surface that is not the light receiving surface.
  • the coating method is not limited, and examples thereof include a printing method, a spin method, a brush coating, a spray method, a doctor blade method, a roll coater method, and an ink jet method.
  • coated amount of the p-type diffusion layer forming composition for example, it is a 0.05g / m 2 ⁇ 1.05g / m 2, 0.065g / m 2 ⁇ 0.02g / M 2 is preferable.
  • a drying step for volatilizing the solvent contained in the composition may be necessary after coating.
  • drying is performed at a temperature of about 80 ° C. to 300 ° C. for about 1 to 10 minutes when using a hot plate, and about 10 to 30 minutes when using a dryer or the like.
  • the drying conditions depend on the solvent composition of the n-type diffusion layer forming composition, and are not particularly limited to the above conditions in the present invention.
  • the semiconductor substrate coated with the p-type diffusion layer forming composition is heat-treated at 600 ° C. to 1200 ° C. By this heat treatment, the acceptor element diffuses into the semiconductor substrate, and a p + -type diffusion layer is formed.
  • a known continuous furnace, batch furnace, or the like can be applied to the heat treatment. Further, the furnace atmosphere during the thermal diffusion treatment can be appropriately adjusted to air, oxygen, nitrogen or the like.
  • the thermal diffusion treatment time can be appropriately selected according to the content of the acceptor element contained in the p-type diffusion layer forming composition. For example, it can be 1 to 60 minutes, and more preferably 2 to 30 minutes.
  • the glass is removed by etching.
  • etching a known method such as a method of immersing in an acid such as hydrofluoric acid or a method of immersing in an alkali such as caustic soda can be applied.
  • the p-type diffusion layer forming composition of the present invention having a glass powder content of 1% by mass or more and 90% by mass or less is used, the glass layer formed on the p-type diffusion layer is removed in a short time. Is done.
  • an aluminum paste is printed on the back surface, and this is baked to change the n-type diffusion layer into a p + -type diffusion layer, and at the same time, an ohmic contact is obtained.
  • the electrical conductivity of the aluminum paste is low, the sheet resistance must be lowered, and the aluminum layer formed on the entire back surface usually has a thickness of about 10 ⁇ m to 20 ⁇ m after firing.
  • the thermal expansion coefficient differs greatly between silicon and aluminum, so that a large internal stress is generated in the silicon substrate during the firing and cooling process, causing warpage. This internal stress has a problem that the crystal grain boundary is damaged and the power loss increases.
  • the warp easily damages the element in the transportation of the solar cell element in the module process and the connection with a copper wire called a tab wire.
  • the thickness of the silicon substrate has been reduced due to the improvement of the slice processing technique, and the elements tend to be easily broken.
  • the material used for the back electrode is not limited to aluminum.
  • Ag (silver) or Cu (copper) can be applied, and the thickness of the back electrode can be made thinner than the conventional one. Further, it is not necessary to form the entire surface. Therefore, it is possible to reduce internal stress and warpage in the silicon substrate that occur during the firing and cooling processes.
  • an antireflection film is formed on the n-type diffusion layer formed above. This step is the same as that described with reference to FIG. 1 (4) in the formation of the n-type diffusion layer.
  • the surface electrode is formed by applying a surface electrode metal paste on the surface (light receiving surface) of the antireflection film by screen printing and drying. This step is the same as that described with reference to FIG. 1 (5) in the formation of the n-type diffusion layer.
  • a back electrode is also formed on the p + -type diffusion layer on the back surface.
  • the back electrode formation process is also the same as that described for the n-type diffusion layer.
  • the above electrode is fired to complete the solar cell element. This process is the same as that described with reference to FIG. 1 (6) in the formation of the n-type diffusion layer.
  • a mixed gas of phosphorus oxychloride (POCl 3 ), nitrogen and oxygen is used to form an n-type diffusion layer on a silicon substrate which is a p-type semiconductor substrate.
  • the n-type diffusion layer may be formed using the above-described n-type diffusion layer forming composition.
  • the n-type diffusion layer forming composition is applied to the light-receiving surface which is the surface of the p-type semiconductor substrate, and the back surface of the p-type semiconductor substrate according to the present invention is applied.
  • the mold diffusion layer forming composition is applied and subjected to thermal diffusion treatment at 600 ° C. to 1200 ° C.
  • the donor element diffuses into the p-type semiconductor substrate on the front surface to form an n-type diffusion layer
  • the acceptor element diffuses on the back surface to form a p + -type diffusion layer.
  • a solar cell element is produced by the same steps as those described above.
  • the solar cell element in which the n-type diffusion layer is formed on the front surface, the p + -type diffusion layer is formed on the back surface, and the front surface electrode and the back surface electrode are provided on the respective layers has been described. If the diffusion layer forming composition and the p-type diffusion layer forming composition are used, a back contact type solar cell element can also be produced.
  • the back contact type solar cell element has all electrodes provided on the back surface to increase the area of the light receiving surface. That is, in the back contact type solar cell element, it is necessary to form both the n-type diffusion region and the p + -type diffusion region on the back surface to form a pn junction structure.
  • the n-type diffusion layer forming composition and the p-type diffusion layer forming composition of the present invention can form an n-type diffusion site and a p-type diffusion site only at a specific site, and thus a back contact solar cell. It can be suitably applied to the manufacture of elements.
  • Example 1A An automatic mortar containing 20 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 0.08 g of ethyl cellulose, and 2.14 g of 2- (2-butoxyethoxy) ethyl acetate An n-type diffusion layer forming composition having a glass content of 90% was prepared by mixing using a kneader and forming a paste. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 11 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • the sheet resistance was measured by a four-probe method using a Loresta-EP MCP-T360 type low resistivity meter manufactured by Mitsubishi Chemical Corporation.
  • Example 2A An automatic mortar containing 8 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 0.17 g of ethyl cellulose, and 4.27 g of 2- (2-butoxyethoxy) ethyl acetate An n-type diffusion layer forming composition having a glass content of 65% was prepared by mixing using a kneader to make a paste. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 40 minutes to remove the glass layer, and washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 12 ⁇ / ⁇ , and P (phosphorus) was diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • Example 3A Automatic mortar kneading 6 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 0.91 g of ethyl cellulose, and 23.1 g of 2- (2-butoxyethoxy) ethyl acetate
  • An n-type diffusion layer forming composition having a glass content of 20% was prepared by mixing using an apparatus to make a paste. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer and washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 11 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • Example 4A 3 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 1.02 g of ethyl cellulose, and 26.0 g of 2- (2-butoxyethoxy) ethyl acetate were mixed to make a paste, An n-type diffusion layer forming composition having a glass content of 10% was prepared. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer and washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 17 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • Example 5A 0.5 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 0.36 g of ethyl cellulose, and 9.14 g of 2- (2-butoxyethoxy) ethyl acetate, Using an automatic mortar kneader, they were mixed to form a paste to prepare an n-type diffusion layer forming composition having a glass content of 5%. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer and washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 20 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • Example 6A 0.3 g of P 2 O 5 —ZnO-based glass (P 2 O 5 : 30%, ZnO: 70%) powder, 0.56 g of ethyl cellulose, and 14.1 g of 2- (2-butoxyethoxy) ethyl acetate, Using an automatic mortar kneader, they were mixed to form a paste to prepare an n-type diffusion layer forming composition having a glass content of 2%. Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer and washed with running water. Thereafter, drying was performed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 56 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 14 ⁇ / ⁇ , and P (phosphorus) diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 50 ⁇ / ⁇ , and an n-type diffusion layer was also formed on the back surface.
  • n-type diffusion layer composition is prepared by mixing 1 g of ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ) powder, 7 g of pure water, 0.7 g of polyvinyl alcohol, and 1.5 g of isopropyl alcohol. Was prepared. Next, the prepared solution was applied to the surface of the p-type silicon substrate by a spin coater (2000 rpm, 30 sec) and dried on a hot plate at 150 ° C. for 5 minutes. Subsequently, a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in hydrofluoric acid for 5 minutes to remove the glass layer, washed with running water, and dried.
  • ammonium dihydrogen phosphate NH 4 H 2 PO 4
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 10 ⁇ / ⁇ , and P (phosphorus) was diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 100 ⁇ / ⁇ , and an n-type diffusion layer was also formed on the back surface.
  • the sheet resistance of the surface on which the n-type diffusion layer forming composition was applied was 10 ⁇ / ⁇ , and P (phosphorus) was diffused to form an n-type diffusion layer.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer and washed with running water. Thereafter, drying was performed.
  • the sheet resistance on the surface on which the n-type diffusion layer forming composition was applied was 186 ⁇ / ⁇ , and P (phosphorus) was not sufficiently diffused.
  • the sheet resistance on the back surface was 1000000 ⁇ / ⁇ or more, which was not measurable, and it was determined that the n-type diffusion layer was not substantially formed.
  • Example 1B 20 g of B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.), 0.08 g of ethyl cellulose, Then, 2.14 g of 2- (2-butoxyethoxy) ethyl acetate was mixed using an automatic mortar kneader to make a paste, thereby preparing a p-type diffusion layer forming composition having a glass powder content of 90%.
  • the prepared paste is applied by screen printing to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface so that the application amount becomes 0.065 g / m 2, and a hot plate at 150 ° C. Dry for 5 minutes above. Subsequently, thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 90 minutes to remove the glass layer, washed with running water, and dried.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 30 ⁇ / ⁇ , and B (boron) was diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • Example 2B 8 g of B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.), 0.17 g of ethyl cellulose, Then, 4.27 g of 2- (2-butoxyethoxy) ethyl acetate was mixed with an automatic mortar kneader to make a paste, and a p-type diffusion layer forming composition having a glass powder content of 65% was prepared. Next, the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C.
  • thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 40 minutes to remove the glass layer, washed with running water, and dried.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 48 ⁇ / ⁇ , and B (boron) was diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • Example 3B 6 g of B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.), 0.91 g of ethyl cellulose, Then, 23.1 g of 2- (2-butoxyethoxy) ethyl acetate was mixed using an automatic mortar kneader to make a paste, thereby preparing a p-type diffusion layer forming composition having a glass powder content of 20%. Next, the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C.
  • the sheet resistance on the surface on which the p-type diffusion layer forming composition was applied was 75 ⁇ / ⁇ , and B (boron) was diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • Example 4B 3 g of B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.), 1.02 g of ethyl cellulose, Then, 26.0 g of 2- (2-butoxyethoxy) ethyl acetate was mixed using an automatic mortar kneader to make a paste, thereby preparing a p-type diffusion layer forming composition having a glass powder content of 10%. Next, the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 83 ⁇ / ⁇ , and B (boron) was diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • Example 5B 0.5 g of B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.) 36 g and 9.14 g of 2- (2-butoxyethoxy) ethyl acetate were mixed and pasted using an automatic mortar kneader to prepare a p-type diffusion layer forming composition having a glass powder content of 5%. . Next, the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C. for 5 minutes. Subsequently, a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer, washed with running water, and dried.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 110 ⁇ / ⁇ , and B (boron) diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • Example 6B B 2 O 3 —SiO 2 —R 2 O (R: Na, K, Li) glass powder (trade name: TMX-603C, manufactured by Toago Material Technology Co., Ltd.) 0.3 g 56 g and 14.1 g of 2- (2-butoxyethoxy) ethyl acetate were mixed and pasted using an automatic mortar kneader to prepare a p-type diffusion layer forming composition having a glass powder content of 2%. . Next, the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C. for 5 minutes. Subsequently, a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer, washed with running water, and dried.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 160 ⁇ / ⁇ , and B (boron) was diffused to form a p-type diffusion layer. Further, the substrate was not warped.
  • the sheet resistance of the surface on which the p-type diffusion layer forming composition was applied was 42 ⁇ / ⁇ , and B (boron) was diffused.
  • thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 90 minutes to remove the glass layer, washed with running water, and dried.
  • the prepared paste was applied to the surface of a p-type silicon substrate having an n-type diffusion layer formed on the surface by screen printing, and dried on a hot plate at 150 ° C. for 5 minutes.
  • a thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000 ° C., and then the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes to remove the glass layer, washed with running water, and dried.
  • the sheet resistance on the surface on which the p-type diffusion layer forming composition was applied was 320 ⁇ / ⁇ , and B (boron) was not sufficiently diffused.

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Abstract

Cette invention concerne une composition de formation de couche de diffusion d'impuretés contenant un milieu de dispersion et une poudre de verre contenant un élément donneur ou un élément accepteur, la teneur en poudre de verre allant de 1 à 90% en masse. Quand la composition de formation de couche de diffusion d'impuretés est une composition de formation de couche de diffusion de type n, la poudre de verre contient l'élément donneur. Quand la composition de formation de couche de diffusion d'impuretés est une composition de formation de couche de diffusion de type p, la poudre de verre contient l'élément accepteur. Le revêtement de ladite composition de formation de couche de diffusion d'impuretés et sa soumission à un traitement de diffusion thermique permettent de fabriquer une couche de diffusion de type n ou une couche de diffusion de type p et de fabriquer un élément de cellule solaire avec une couche de diffusion de type n ou une couche de diffusion de type p.
PCT/JP2011/064591 2010-06-24 2011-06-24 COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION D'IMPURETÉS, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE n, COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE p, PROCÉDÉ DE FABRICATION DE COUCHE DE DIFFUSION DE TYPE p, ET PROCÉDÉ DE FABRICATION D'ÉLÉMENTS DE CELLULE SOLAIRE WO2011162394A1 (fr)

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CN2011800307885A CN102959684A (zh) 2010-06-24 2011-06-24 杂质扩散层形成组合物、n型扩散层形成组合物、n型扩散层的制造方法、p型扩散层形成组合物、p型扩散层的制造方法以及太阳能电池元件的制造方法
KR1020127033323A KR20130098180A (ko) 2010-06-24 2011-06-24 불순물 확산층 형성 조성물, ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, ｐ 형 확산층 형성 조성물, ｐ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법

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JP2010144203A JP5625537B2 (ja) 2010-06-24 2010-06-24 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013125252A1 (fr) * 2012-02-23 2013-08-29 日立化成株式会社 Composition de formation de couche de diffusion d'impureté, procédé de fabrication d'un substrat semi-conducteur doté d'une couche de diffusion d'impureté et procédé de fabrication d'un élément de cellule solaire
WO2013129002A1 (fr) * 2012-02-29 2013-09-06 日立化成株式会社 COMPOSITION POUR LA FORMATION D'UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n, ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6232993B2 (ja) * 2013-12-12 2017-11-22 日立化成株式会社 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子
TW201528531A (zh) * 2013-12-20 2015-07-16 Hitachi Chemical Co Ltd 半導體基板的製造方法、半導體基板、太陽電池元件的製造方法及太陽電池元件
KR102044381B1 (ko) * 2018-04-18 2019-11-13 한국과학기술연구원 실리콘 웨이퍼의 제조 방법, 그로부터 제조된 실리콘 웨이퍼와 이를 포함하는 태양전지
CN113782423B (zh) * 2021-08-25 2022-08-23 中国科学院宁波材料技术与工程研究所 杂质扩散方法和太阳能电池制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02162720A (ja) * 1988-12-15 1990-06-22 Sharp Corp 半導体装置の製造方法
JPH04158514A (ja) * 1990-10-22 1992-06-01 Sumitomo Chem Co Ltd 半導体基板への不純物拡散方法
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1160801C (zh) * 1995-11-06 2004-08-04 日亚化学工业株式会社 氮化物半导体器件
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
DE102005061820B4 (de) * 2005-12-23 2014-09-04 Infineon Technologies Austria Ag Verfahren zur Herstellung einer Solarzelle
CN102593243A (zh) * 2007-08-31 2012-07-18 费罗公司 用于太阳能电池的分层触点结构
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
JP5522900B2 (ja) * 2008-02-22 2014-06-18 東京応化工業株式会社 電極形成用導電性組成物及び太陽電池の形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02162720A (ja) * 1988-12-15 1990-06-22 Sharp Corp 半導体装置の製造方法
JPH04158514A (ja) * 1990-10-22 1992-06-01 Sumitomo Chem Co Ltd 半導体基板への不純物拡散方法
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013125252A1 (fr) * 2012-02-23 2013-08-29 日立化成株式会社 Composition de formation de couche de diffusion d'impureté, procédé de fabrication d'un substrat semi-conducteur doté d'une couche de diffusion d'impureté et procédé de fabrication d'un élément de cellule solaire
JPWO2013125252A1 (ja) * 2012-02-23 2015-07-30 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法及び太陽電池素子の製造方法
JP2016027661A (ja) * 2012-02-23 2016-02-18 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法及び太陽電池素子の製造方法
WO2013129002A1 (fr) * 2012-02-29 2013-09-06 日立化成株式会社 COMPOSITION POUR LA FORMATION D'UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n, ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
JP5610100B2 (ja) * 2012-02-29 2014-10-22 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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