WO2012165568A1 - 発光素子用基板、基板用材料および発光モジュール - Google Patents
発光素子用基板、基板用材料および発光モジュール Download PDFInfo
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- WO2012165568A1 WO2012165568A1 PCT/JP2012/064134 JP2012064134W WO2012165568A1 WO 2012165568 A1 WO2012165568 A1 WO 2012165568A1 JP 2012064134 W JP2012064134 W JP 2012064134W WO 2012165568 A1 WO2012165568 A1 WO 2012165568A1
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- Prior art keywords
- light emitting
- base material
- material layer
- emitting element
- light
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Definitions
- the present invention relates to a light emitting element substrate, a substrate material, and a light emitting module, and in particular, a light emitting element substrate provided with a light reflecting layer, a substrate material including a portion that becomes the light emitting element substrate, and the light emitting element substrate
- a light emitting module comprising:
- a light emitting module including a light emitting element substrate provided with a light reflecting layer is known.
- a light emitting module including a light emitting element substrate provided with such a light reflecting layer is disclosed in, for example, Japanese Patent Application Laid-Open No. 2008-10591.
- Japanese Patent Application Laid-Open No. 2008-10591 discloses an LED device including a substrate made of ceramics and an LED chip disposed on the surface of the substrate.
- a wiring pattern made of Cu is formed so as to cover from the surface on the LED chip side to the surface on the opposite side of the LED chip from the side surface.
- Ag plating for reflecting light is formed on the surface of the wiring pattern on the LED chip side, and sulfur components in the air are transmitted on the surface of the Ag plating.
- a difficult thin film coat is formed. By this thin film coating, formation of black silver sulfide (Ag 2 S) that makes it difficult to reflect light on the surface of the Ag plating is suppressed.
- the present invention has been made to solve the above-described problems, and one object of the present invention is to reduce the amount of light reflected by the light reflecting layer, thereby reducing the light amount of the light emitting module. It is to provide a light emitting element substrate capable of suppressing the decrease, a substrate material including a portion to be the light emitting element substrate, and a light emitting module including the light emitting element substrate.
- a substrate for a light emitting device includes a light reflecting layer made of Al or an Al alloy on which a light emitting device is arranged, and a base material layer made of Cu or a Cu alloy,
- the light reflection layer has a bonding region that can be bonded to the light reflection layer, and the light reflection layer is pressure bonded to all or part of the bonding region of the base material layer.
- the light emitting element has a light reflecting layer made of Al or Al alloy disposed on the surface, whereby Al or Al alloy is sulfur in the air. Therefore, Ag 2 S or the like is not formed as an adhering substance on the light reflecting layer.
- the light reflecting layer since it can suppress that the amount of light reflection in the light reflection layer which consists of Al or Al alloy decreases, it can control that a light quantity falls in a light emitting module using a substrate for light emitting elements. it can.
- the light reflecting layer is press-bonded to all or part of the bonding region of the base material layer, the light reflecting layer is formed by a plating process that is difficult to form in a uniform thickness in the manufacturing process.
- the base material layer made of Cu or Cu alloy having high thermal conductivity, the heat generated by the light emitting element can be easily passed through the base material layer. Therefore, it is possible to suppress deterioration of the light emitting characteristics of the light emitting element due to heat generation.
- the light reflecting layer is formed in a bonding region provided in at least a part of the base material layer. If comprised in this way, in the joining area
- the base material layer has a portion having a thickness equal to or less than a total thickness of the light reflection layer and the base material layer in the joining region so as to protrude from the joining region. It further has an overhang part provided. If comprised in this way, the board
- the overhang portion is formed at least in a region to be bent. If comprised in this way, it can be bent easily in the overhang
- a step portion is formed between the bonding region of the base material layer and the overhang portion.
- the substrate for a light-emitting element in which the base material layer has an overhang portion preferably, at least a part of the surface of the overhang portion of the base material layer has wettability to solder rather than the base material layer made of Cu or Cu alloy.
- a plating layer containing a material having a good thickness is formed. If comprised in this way, since the base material layer and solder which consist of Cu or Cu alloy can be easily connected via a plating layer, a base material layer and a light emitting element are controlled via a plating layer. A substrate or the like can be easily connected with solder.
- the light emitting element substrate body having a clad structure is bent from the side opposite to the side where the light emitting element is disposed so as to cover the upper surface, the side surface, and the lower surface of the base supporting the light emitting element substrate body.
- the plating layer is provided on a lower portion of the light emitting element substrate main body covering the lower surface of the base and on a side portion of the light emitting element substrate main body covering the side surface of the base.
- the thickness of the bonding region of the base material layer is preferably larger than the thickness of the overhang portion of the base material layer. If comprised in this way, it can make it easy to make an overhang
- the thickness of the bonding region of the base material layer is larger than the thickness of the light reflecting layer. If comprised in this way, since the base material layer which consists of Cu or Cu alloy generally has thermal conductivity larger than the light reflection layer which consists of Al or Al alloy, the thickness of the joining area
- the thickness of the bonding region of the base material layer is 10 times or more the thickness of the light reflecting layer. If comprised in this way, the heat from a light emitting element can be further radiated easily by the joining area
- the thickness of the bonding region of the base material layer is preferably 0.1 mm or more and 3 mm or less.
- the thickness of the reflective layer is 1 ⁇ m or more and 50 ⁇ m or less. If comprised in this way, it can make it easier to radiate the heat
- the thickness of the light reflecting layer is 1 ⁇ m or more and 50 ⁇ m or less
- the thickness of the light reflecting layer is preferably 1 ⁇ m or more and 10 ⁇ m or less. If comprised in this way, heat can be rapidly transmitted to the base material layer excellent in heat dissipation from the light reflection layer because the thickness of the light reflection layer is sufficiently small.
- the bonding region to which the light reflecting layer is bonded is formed at least in a region surrounded by a reflector formed so as to surround the light emitting element. If comprised in this way, since the light from a light emitting element can fully be reflected by the reflector and the light reflection layer formed in the area
- the light emitting element substrate body having a clad structure is preferably a base that supports the light emitting element substrate body from the side opposite to the side where the light emitting element is disposed.
- the step portion is formed on the surface of the base layer on the side where the light emitting element is disposed, and the side where the light emitting element of the base layer is disposed.
- the surface on the opposite side is formed in a substantially flat surface shape. If comprised in this way, since the surface on the opposite side to the side by which the light emitting element of the base material layer is arrange
- the light reflecting layer is embedded in the base material layer, and is positioned around the surface of the light reflecting layer embedded in the base material layer and the bonding region.
- the surface of the base material layer is connected to a substantially flat surface. If comprised in this way, the heat which a light emitting element produces can be transmitted to a base material layer also from the side surface of a light reflection layer. Thereby, the heat which a light emitting element produces can be thermally radiated more effectively via a base material layer.
- a substrate material according to a second aspect of the present invention is a substrate material including a portion to be a plurality of light emitting element substrates, and each of the plurality of light emitting element substrates has an Al surface on which the light emitting elements are disposed.
- a light reflection layer made of an Al alloy and a base material layer made of Cu or Cu alloy the base material layer has a bonding region that can be joined to the light reflection layer, and the light reflection layer is made of a base material Pressure bonding is performed on all or a part of the bonding regions of the layers, and the portions to be a plurality of light emitting element substrates are configured to be separable.
- each of the plurality of light emitting element substrates has a light reflecting layer made of Al or Al alloy on which the light emitting elements are arranged. Since Al or Al alloy does not substantially react with sulfur in the air, Ag 2 S or the like is not formed as a deposit on the light reflecting layer. Thereby, since it can suppress that the reflected amount of light in the one surface which consists of Al or Al alloy reduces, it can suppress that a light quantity falls in the light emitting module using the board
- the light reflecting layer is press-bonded to all or part of the bonding region of the base material layer, the light reflecting layer is formed by a plating process that is difficult to form in a uniform thickness in the manufacturing process. Unlike the case, it is possible to suppress the formation of a hole (pin hole) in which Al or an Al alloy is not disposed in the light reflecting layer. Thereby, it can suppress that the amount of light reflection in a light reflection layer reduces due to a pinhole.
- each of the plurality of light-emitting element substrates has a base material layer made of Cu or Cu alloy having high thermal conductivity, so that a light-emitting element is generated. Since heat can be easily dissipated through the base material layer, it is possible to suppress deterioration of the light emitting characteristics of the light emitting element due to heat generation.
- the portions to be the plurality of light emitting element substrates can be separable, the plurality of light emitting element substrates can be easily manufactured from one substrate material.
- a light emitting module includes a light emitting element, a light reflecting layer made of Al or Al alloy on which the light emitting element is disposed, and a base material layer made of Cu or Cu alloy.
- the layer has a bonding region that can be bonded to the light reflecting layer, and the light reflecting layer is pressure bonded to all or part of the bonding region of the base material layer, and the base material And a base arranged so that the side opposite to the light reflecting layer is along the surface.
- the light emitting element substrate has the light reflecting layer made of Al or Al alloy on the surface of which the light emitting element is arranged. Since it does not substantially react with sulfur in the air, Ag 2 S or the like is not formed as a deposit on the light reflecting layer. Thereby, since it can suppress that the reflection amount of the light in the one surface which consists of Al or Al alloy reduces, it can suppress that a light quantity falls in a light emitting module. Further, in the light emitting element substrate, the light reflecting layer is press-bonded to all or a part of the bonding region of the base material layer, so that light is not easily formed by a plating process that is difficult to form in a uniform thickness in the manufacturing process.
- the reflective layer is formed, it is possible to suppress the formation of a hole (pin hole) in which Al or an Al alloy is not disposed in the light reflective layer. Thereby, it can suppress that the amount of light reflection in a light reflection layer reduces due to a pinhole.
- the light emitting element substrate has the base layer made of Cu or Cu alloy having high thermal conductivity, so that the heat generated by the light emitting element can be easily determined. Since heat can be dissipated through the material layer, it is possible to suppress deterioration of the light emitting characteristics of the light emitting element due to heat generation.
- the light reflecting layer is formed in a bonding region provided in at least a part of the base material layer. If comprised in this way, it can suppress that a light quantity falls in the joining area
- the base material layer is formed at least in a region to be bent, and is a total of the light reflecting layer and the base material layer in the joining region so as to protrude from the joining region. It further has an overhang portion provided with a portion having a thickness equal to or less than the thickness, and the overhang portion of the base material layer is arranged on the base in a state of being bent so as to cover the side surface and the lower surface of the base. Yes. If comprised in this way, the board
- the total thickness of the light reflecting layer and the base material layer in the bonding region equal to or greater than the thickness of the overhanging portion, heat from the light emitting element can be easily radiated by the large bonding region.
- the contact area between the base material layer and the base can be increased by arranging the overhanging portion so as to cover the side surface and the lower surface of the base, the heat of the base material layer is transmitted by the base. Can do.
- a step portion is formed between the bonding region of the base material layer and the overhang portion.
- FIG. 6 is a cross-sectional view taken along line 600-600 in FIG. It is sectional drawing which showed the light reflection part and level
- FIG. 3 is a cross-sectional view taken along line 610-610 in FIG. It is a perspective view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention. It is a perspective view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention.
- the LED module 100 is an example of the “light emitting module” in the present invention.
- the LED module 100 As shown in FIGS. 1 and 2, the LED module 100 according to the first embodiment of the present invention has solder 101a on one side (X1 side) in the direction (X direction) in which the Cu wirings 102a and 102b of the printed board 102 extend.
- the other side (X2 side) is connected to the Cu wiring 102b via the solder 101b.
- the light emission of the LED element 2 of the LED module 100 is controlled by a control unit (not shown) separately connected to the printed circuit board 102.
- the LED module 100 includes a heat dissipation board 1 divided into an X1 side and an X2 side, an LED element 2 fixed on an upper surface 12a described later on the X1 side of the heat dissipation board 1, and a base covered with the heat dissipation board 1.
- the base 3 (refer FIG. 2) is included.
- the base 3 is covered with the heat dissipation substrate 1 on the upper surface 3a (Z1 side surface), both side surfaces 3b in the longitudinal direction (X direction), and a part of the lower surface 3c (Z2 side surface).
- the heat dissipation substrate 1 is an example of the “light emitting element substrate” and the “light emitting element substrate body” in the present invention
- the LED element 2 is an example of the “light emitting element” in the present invention.
- the heat radiating substrate 1 includes a notch 10a formed on the upper surface 3a side (Z1 side) of the base 3 and on the X2 side of the center in the X direction, and the lower surface 3c side (Z2 side) of the base 3 And it is comprised so that it may be divided into X1 side and X2 side by the notch part 10b (refer FIG. 2) formed in the center part of X direction, and its periphery.
- the notches 10a and 10b are both formed to extend in the Y direction.
- the LED element 2 is configured to irradiate light from the upper surface (Z1 side surface) side mainly upward (Z1 side).
- a part of light irradiated from the LED element 2 is irradiated to the heat radiating substrate 1 side (Z2 side) or a reflector 6 side (side side) described later.
- the base 3 is made of white alumina (Al 2 O 3 ) having an insulating property and capable of reflecting light.
- the base 3 is also formed inside the notches 10a and 10b of the heat dissipation board 1. Thereby, the insulation between the X1 side and the X2 side of the heat dissipation substrate 1 is ensured. Further, the base 3 disposed inside the notch 10a may reflect light emitted from the LED element 2 to the notch 10a below (Z2 side) upward (Z1 side). Is possible.
- the LED element 2 is bonded to the upper surface 12a on the X1 side of the heat dissipation substrate 1 through an adhesive member 4 made of an insulating resin.
- a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are electrically connected to the X1 side and the X2 side of the heat dissipation substrate 1 via Au wires 5a and 5b, respectively.
- a reflector 6 is disposed on the upper surface 12 a of the heat dissipation substrate 1 so as to surround the LED element 2.
- the reflector 6 is made of alumina (Al 2 O 3 ) and has an opening that increases from the lower side (Z2 side) to the upper side (Z1 side). Thereby, the reflector 6 is comprised so that the light irradiated to the side side from the LED element 2 can be reflected toward upper direction (Z1 direction).
- a sealing resin 7 made of a transparent silicon resin is disposed in the space formed by the reflector 6 and the heat dissipation substrate 1 so as to cover the LED element 2 and the Au wires 5a and 5b.
- the heat dissipation substrate 1 is a clad material having a clad structure in which a base layer 11 made of Cu and a light reflecting layer 12 made of Al are roll-bonded to each other. Consists of.
- the base material layer 11 covers the upper surface 3a (Z1 side surface) of the base 3, both side surfaces 3b in the longitudinal direction (X direction), and a part of the lower surface 3c (Z2 side surface).
- the light reflecting layer 12 is disposed in a part of the joining region 13 on the outer surface 11 b of the base material layer 11. Further, the light reflecting layer 12 is pressure-bonded to a region of the bonding region 13 excluding the notch 10a.
- the light reflecting layer 12 is disposed in a part of the bonding region 13 of the base material layer 11.
- the LED element 2 is bonded on the upper surface 12a (the surface on the Z1 side), and the base material layer 11 is bonded to the lower surface 12b (the surface on the Z2 side).
- an oxide film (not shown) made of Al 2 O 3 having a very thin thickness is formed on the upper surface 12a (the surface on the Z1 side). This oxide film suppresses the light reflecting layer 12 from reacting with sulfur in the air.
- the thickness t ⁇ b> 1 of the heat dissipation substrate 1 in the bonding region 13, which is a region where the base material layer 11 and the light reflecting layer 12 are bonded, is other than the bonding region 13. It is larger than the thickness t2 of the thin plate portion 14 formed of the region.
- the thin plate portion 14 is composed only of the base material layer 11. Specifically, the pair of thin plate portions 14 is formed so as to sandwich the joining region 13 in the X direction. Further, step portions 15 a and 15 b are formed on the outer surface 11 b of the base material layer 11 on the LED element 2 side and at the boundary between the bonding region 13 and the pair of thin plate portions 14.
- the step portion 15a is formed at the boundary between the thin plate portion 14 on the X1 side and the bonding region 13
- the step portion 15b is formed at the boundary between the thin plate portion 14 on the X2 side and the bonding region 13.
- the pair of thin plate portions 14 are formed so as to project from the step portion 15a on the X1 side of the joining region 13 to the X1 side, and so as to project from the step portion 15b on the X2 side of the joining region 13 to the X2 side. Is formed.
- the thin plate portion 14 is an example of the “overhang portion” in the present invention.
- the height position (position in the Z direction) on the bonding region 13 side (X2 side) is higher than the height position on the thin plate portion 14 side (X1 side) with the step portion 15a as a boundary. It is configured as follows. Similarly, the heat dissipation substrate 1 is configured such that the height position on the bonding region 13 side (X1 side) is higher than the height position on the thin plate portion 14 side (X2 side) with the stepped portion 15b as a boundary. Yes. On the other hand, as shown in FIG. 2, a step portion is not formed on the inner surface 11 a of the base material layer 11 on the base 3 side, and a substantially flat surface is formed. Thereby, as shown in FIG. 3, the thickness t ⁇ b> 1 of the joining region 13 is configured to be larger than the thickness t ⁇ b> 2 of the thin plate portion 14.
- the thickness t2 of the thin plate portion 14 is about 0.1 mm.
- the light reflecting layer 12 (bonding region 13) extends from one end (Y1 side) in the Y direction to the other end (Y2 side) in the Y direction. Is formed. Further, the light reflection layer 12 is formed in a region excluding the notch 10 a and at least a region surrounded by the reflector 6. Thus, the light reflected from the LED element 2 downward (Z2 side, see FIG. 2) by the light reflecting layer 12 can be reflected upward (Z1 side, see FIG. 2). In the bonding region 13, the base material layer 11 and the light reflecting layer 12 have a width W1 of about 5 mm in the Y direction and a length L1 of about 5 mm in the X direction.
- the base material layer 11 is made of Cu having a purity of about 99.9% or more such as oxygen-free copper, tough pitch copper, and phosphorus deoxidized copper.
- the light reflecting layer 12 is made of Al having a purity of about 99% or more such as JIS 1100, JIS 1050, JIS 1070, JIS 1080, and JIS 1060, and is configured to reflect light.
- the thermal conductivity (about 400 W / (m ⁇ k)) of the base material layer 11 made of Cu is larger than the thermal conductivity (about 240 W / (m ⁇ k)) of the light reflecting layer 12 made of Al. .
- the conductivity (about 60 ⁇ 10 6 / ( ⁇ ⁇ m)) of the base material layer 11 made of Cu is the conductivity (about 35 ⁇ 10 6 / ( ⁇ ⁇ m)) of the light reflecting layer 12 made of Al. Bigger than. That is, the base material layer 11 is made of a material that is easier to receive and radiate heat than the light reflecting layer 12 and is made of a highly conductive material.
- the thin plate portion 14 of the heat dissipation substrate 1 is configured to cover the base 3. Specifically, in the thin plate portion 14 of the heat dissipation board 1, the boundary between the upper surface 3 a of the base 3 and both side surfaces 3 b in the X direction and the boundary between the lower surface 3 c of the base 3 and both side surfaces 3 b in the X direction are The thin plate portion 14 covers the vicinity of the end portion of the upper surface 3a of the base 3, the both side surfaces 3b in the X direction, and a part of the lower surface 3c of the base 3 by being bent at a substantially right angle.
- the heat dissipation substrate 1 has a length of about 20 mm in the X direction when not bent.
- a plating layer 16 is formed on the surface of the thin plate portion 14 of the heat dissipation substrate 1 (on the outer surface 11b of the base material layer 11).
- the plating layer 16 is formed at least in a region where the solders 101 a and 101 b are disposed, and is made of a material having better wettability than Cu constituting the base material layer 11.
- the plating layer 16 is formed on the heat dissipation substrate 1 on a part of the outer surface 11b on the Z2 side of the region corresponding to the side surface 3b of the base 3 and outside the region corresponding to the lower surface 3c of the base 3. It is formed on the surface 11b.
- the plating layer 16 is formed on a part of the side portion of the heat dissipation board 1 and the lower part of the heat dissipation board 1. Thereby, a part of the heat transmitted from the LED element 2 to the heat radiating substrate 1 is transmitted to the printed circuit board 102 side via the solders 101a and 101b.
- the plating layer 16 has a structure in which a Ni layer 16a, a Pd layer 16b, and an Au layer 16c are sequentially laminated from the side close to the outer surface 11b of the base material layer 11 made of Cu. Yes.
- the Au layer 16c has better wettability with respect to the solders 101a and 101b than the base material layer 11 (Cu).
- the thickness t5 of the Ni layer 16a is not less than about 0.5 ⁇ m and not more than about 1.5 ⁇ m.
- the thickness t6 of the Pd layer 16b is not less than about 0.02 ⁇ m and not more than about 0.06 ⁇ m.
- the thickness t7 of the Au layer 16c is not less than about 0.001 ⁇ m and not more than about 0.005 ⁇ m.
- the thickness of the Cu plate is about 49 times the thickness of the Al plate.
- the Cu plate and the Al plate are rolled (rolling joined) in a state where the Al plate is disposed on substantially the entire surface of the Cu plate.
- the light reflection layer 12 made of Al was bonded to substantially the entire surface of the outer surface 11b of the base material layer 11 made of Cu by diffusion annealing the Cu plate and the Al plate, as shown in FIG.
- the heat dissipation substrate material 200 made of the clad material is formed.
- the heat dissipation substrate material 200 is an example of the “substrate material” in the present invention.
- the heat dissipation substrate material 200 is mechanically cut in the thickness direction (Z direction) from the Z1 side.
- the step portion 15 a is formed on the X1 side of the bonding region 13 and the step portion 15 b is formed on the X2 side of the bonding region 13 so as to sandwich the bonding region 13.
- the thin plate portion 14 having a thickness t2 (see FIG. 3) smaller than the thickness t1 (see FIG. 3) of the bonding region 13 is formed on the X1 side of the step portion 15a and the X2 side of the step portion 15b.
- the bonding regions 13 where the base material layer 11 and the light reflection layer 12 are bonded and the thin plate portions 14 made of only the base material layer 11 are alternately arranged in the X direction. .
- a plurality of portions corresponding to the heat dissipation substrate 1 are formed in the X direction and the Y direction.
- the Ni layer 16a, the Pd layer 16b, and the Au layer 16c are laminated in this order at predetermined positions on the surface of the thin plate portion 14 (on the outer surface 11b of the base material layer 11) by plating.
- the plating layer 16 is formed.
- the notch part 10a extended in a Y direction is formed in each joining area
- the base 3 and the reflector 6 are formed in each of the part corresponding to the heat sink 1 of the heat sink substrate material 200 by insert molding.
- the thin plate portion is formed by bending the boundary between the upper surface 3a of the base 3 and both side surfaces 3b in the X direction and the boundary between the lower surface 3c of the base 3 and both side surfaces 3b in the X direction at substantially right angles. Bending is performed so that 14 covers the base 3.
- the heat dissipation substrate material 200 is cut along the Y direction so as to follow the cutting line 200a (see FIG. 6).
- the thin plate portion 14 positioned on the X1 side of the cutting line 200a is bent on the base 3 on the X1 side of the cutting line 200a, and the thin plate portion 14 positioned on the X2 side of the cutting line 200a is bent on the cutting line 200a.
- the base 3 on the X2 side is bent.
- the heat dissipation substrate material 200 is formed in a state where portions corresponding to the individual heat dissipation substrates 1 are separated from each other in the X direction.
- a connecting portion 201 is formed between each of the portions corresponding to the heat dissipation substrate 1 so that each of the portions corresponding to the heat dissipation substrate 1 can be separated in the Y direction.
- the LED element 2 is mounted on the heat dissipation board 1. Then, a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are connected to one end of the Au wire 5a and one end of the Au wire 5b by ultrasonic welding. Further, the X1 side and X2 side of the light reflecting layer 12 of the heat dissipation substrate 1 are connected to the other end of the Au wire 5a and the other end of the Au wire 5b by ultrasonic welding. At this time, when the Au wires 5a and 5b are welded to the base material layer 11 made of Cu, the welded portion of the base material layer 11 with the Au wires 5a and 5b due to the reaction of Cu with oxygen in the atmosphere. Fragile oxides are formed.
- the bonding between the heat dissipation substrate 1 and the Au wires 5a and 5b is weakened.
- the Au wires 5a and 5b are welded to the light reflection layer 12 made of Al, only the oxide film of the welded portion of the oxide film of the light reflection layer 12 is peeled off. The Au wires 5a and 5b and the exposed Al of the light reflecting layer 12 are directly joined. Thereby, it is possible to strengthen the bonding between the heat dissipation substrate 1 and the Au wires 5a and 5b.
- the sealing resin 7 is disposed and solidified in a space formed by the reflector 6 and the heat dissipation substrate 1 so as to cover the LED element 2 and the Au wires 5a and 5b. Thereby, the heat dissipation substrate material 200 provided with a plurality of portions where the LED modules 100 are formed is formed.
- the plurality of LED modules 100 are separated at the connection portion 201. Thereby, the part corresponding to each heat dissipation board 1 will be in the state where it separated from each other not only in the X direction but also in the Y direction, whereby a plurality of LED modules 100 are formed.
- the LED module 100 is connected to the printed circuit board 102 on which the Cu wirings 102a and 102b are formed using the solders 101a and 101b. Thereby, the LED module 100 connected to the printed circuit board 102 shown in FIGS. 1 and 2 is manufactured.
- the heat dissipation substrate 1 has the LED element 2 bonded on the upper surface 12a and the light reflection layer 12 made of Al, thereby providing a thin oxide film (not shown) on the surface.
- Al) in which (A) is formed does not substantially react with sulfur in the air, so that Ag 2 S and the like are not formed as deposits.
- the base material layer 11 which consists of the heat sink 1 and Cu and the light reflection layer 12 which consists of Al mutually roll in part of the joining area
- the heat generated by the LED element 2 is easily transmitted through the base material layer 11 by using the base material layer 11 made of Cu having high thermal conductivity for the heat dissipation substrate 1. Since heat can be dissipated, it is possible to suppress the deterioration of the light emission characteristics of the LED element 2 due to heat generation.
- the thickness t1 of the heat dissipation substrate 1 in the bonding region 13 that is a region where the base material layer 11 and the light reflection layer 12 are bonded is set to include only the base material layer 11. And by making it larger than thickness t2 of the thin plate part 14 which consists of areas other than the joining area
- FIG. Further, the heat from the LED element 2 can be transmitted by the heat dissipation substrate 1 by the bonding region 13 having a large thickness t1.
- the boundary between the upper surface 3 a of the base 3 and both side surfaces 3 b in the X direction, the lower surface 3 c of the base 3, and the X direction By bending the boundary with both side surfaces 3b at a substantially right angle, the thin plate portion 14 that can be easily deformed can be easily bent.
- the step portion 15a is formed at the boundary between the thin plate portion 14 on the X1 side and the bonding region 13, and the step is formed at the boundary between the thin plate portion 14 on the X2 side and the bonding region 13.
- the portion 15b By forming the portion 15b, the joining region 13 having a large thickness t1 and the thin plate portion 14 having a small thickness t2 that can be easily bent are formed on the heat dissipation substrate 1 with the step portions 15a and 15b as a boundary. Can do.
- the base material layer 11 made of Cu and the solders 101 a and 101 b can be easily connected via the plating layer 16, and thus the base material layer 11 is connected via the plating layer 16.
- the printed circuit board 102 can be easily connected by the solders 101a and 101b.
- the thickness t4 (about 0.49 mm) of the base material layer 11 is formed to be larger than the thickness t2 (about 0.1 mm) of the thin plate portion 14.
- the thin plate portion 14 can be easily bent so as to cover the base 3, and the heat from the LED element 2 can be easily radiated by the bonding region 13 of the base material layer 11.
- the thickness t3 of the light reflecting layer 12 is set to about 10 ⁇ m and the thickness t4 of the base material layer 11 is set to about 0.49 mm, so that light can be reliably reflected.
- the light reflecting layer 12 is formed so as to have a thickness t3 of about 10 ⁇ m, and further from the LED element 2 in the bonding region 13 having a thickness t4 of about 0.49 mm which is larger than the thickness t3 of the light reflecting layer 12. Heat can be easily dissipated.
- the heat dissipation substrate material 200 is formed in a state where portions corresponding to the heat dissipation substrate 1 are separated from each other in the X direction, and each of the portions corresponding to the heat dissipation substrate 1 is formed.
- a plurality of heat dissipating substrates 1 can be easily manufactured from one heat dissipating substrate material 200 by forming connecting portions 201 for separating the portions corresponding to the heat dissipating substrate 1 in the Y direction between the Y directions. can do.
- the boundary between the upper surface 3 a of the base 3 and both side surfaces 3 b in the X direction, the lower surface 3 c of the base 3, and the X direction By bending the boundary with both side surfaces 3b at a substantially right angle, the thin plate portion 14 is near the end of the upper surface 3a of the base 3, the both side surfaces 3b in the X direction, and one of the lower surfaces 3c of the base 3. Since the contact area between the base material layer 11 and the base 3 can be increased by bending so as to cover the portion, the heat of the base material layer 11 can be transmitted by the base 3.
- the plating layer 16 is formed on a part of the side portion of the heat radiating substrate 1 and the lower portion of the heat radiating substrate 1 so that not only the lower surface 3c of the base 3 but also the base is formed. Since the plating layer 16 is also located on the side surface 3b of the base 3, the base 3 and the LED element 2 are controlled by the solders 101a and 101b arranged not only on the lower surface 3c of the base 3 but also on the side 3b of the base 3. The printed circuit board 102 to be connected can be connected. Thereby, the base 3 can be reliably fixed to the printed circuit board 102.
- the light reflecting layer 12 is formed at least in a region surrounded by the reflector 6, thereby forming the light reflecting layer 12 formed in the region surrounded by the reflector 6 and the reflector 6. Therefore, the light from the LED element 2 can be sufficiently reflected, so that it is possible to further suppress the light amount from being reduced in the LED module 100 using the heat dissipation substrate 1.
- the inner surface 11a on the base 3 side of the base material layer 11 in a substantially flat surface shape, the upper surface 3a, the side surface 3b and the base 3 can be easily formed. Since it can be adhered to the lower surface 3c, the heat generated by the LED element 2 can be easily transmitted to the base 3.
- the LED module 300 is an example of the “light emitting module” in the present invention
- the heat dissipation substrate 301 is an example of the “light emitting element substrate” and the “light emitting element substrate body” in the present invention.
- a groove portion 311 c is formed in the base material layer 311 of the heat dissipation substrate 301 of the LED module 300.
- the groove 311c has a length L2 of about 3 mm in the X direction at the central portion on the outer surface 311b corresponding to the upper surface 3a of the base 3 and its periphery.
- the base material layer 311 and the light reflecting layer 312 are roll-bonded to each other with the light reflecting layer 312 embedded in the groove 311c. That is, the heat dissipation substrate 301 is made of a clad material having a clad structure.
- the LED element 2 is bonded on the upper surface 312a, and the base material layer 311 is bonded to the lower surface 312b.
- the light reflecting layer 312 has a length L2 of about 3 mm in the X direction.
- peripheral portions 316a and 316b each including only the base material layer 311 are formed at both ends in the X direction of the joint region 313, which is a region where the base material layer 311 and the light reflecting layer 312 are joined.
- the peripheral portion 316a is formed so as to protrude from the X1 end of the bonding region 313 to the X1 side, and the peripheral portion 316b is extended from the X2 end of the bonding region 313 to the X2 side. Is formed.
- the thickness of the joining region 313, the thickness of the peripheral portion 316a, and the thickness of the peripheral portion 316b are all configured to be substantially the same.
- the peripheral portions 316a and 316b are examples of the “overhang portion” in the present invention.
- Step portions 315a and 315b are formed on the outer surface 311b of the base material layer 311 on the LED element 2 side, and on the X1 side of the peripheral portion 316a and the X2 side of the peripheral portion 316b, respectively.
- Thin plate portions 314 are formed on the side opposite to the bonding region 313 of the stepped portion 315a and on the side opposite to the bonding region 313 of the stepped portion 315b.
- the thickness of the thick plate portion composed of the joining region 313 and the peripheral portions 316a and 316b is larger than the thickness of the thin plate portion 314 composed of regions other than the joining region 313 and the peripheral portions 316a and 316b.
- region 313, the peripheral part 316a, and the peripheral part 316b has the length L3 of about 5 mm in the X direction.
- the thin plate portion 314 is an example of the “overhang portion” in the present invention.
- the light reflecting layer 312 is embedded in the groove 311c, whereby the upper surface 312a of the light reflecting layer 312 in the bonding region 313 and the outer surface 311b of the base material layer 311 in the region around the bonding region 313 Are connected in a substantially flat surface shape. Accordingly, both side surfaces in the X direction of the light reflecting layer 312 are configured to contact the inner surface of the groove 311c.
- the light reflecting layer 312 is formed in a region excluding the cutout portion 10 a and at least in a region surrounded by the reflector 6. In addition, the light reflecting layer 312 is disposed in a part of the bonding region 313 of the base material layer 311.
- the other structure of 2nd Embodiment of this invention is the same as that of the said 1st Embodiment.
- a Cu plate made of Cu having a length of about 60 mm in a predetermined direction (X direction) and extending in the Y direction perpendicular to the X direction is prepared.
- a groove 311c (see FIG. 9) having a predetermined length in the X direction is formed on the Cu plate at equal intervals in the X direction so as to extend in the Y direction.
- an Al plate made of Al having substantially the same width as the groove 311c in the X direction and extending in the Y direction is prepared.
- the Cu plate and the Al plate are rolled (rolled) with the Al plate disposed in each of the plurality of grooves 311c extending in the Y direction of the Cu plate.
- a heat dissipation substrate material 400 made of a clad material is formed.
- the length L2 in the X direction of the groove 311c and the light reflecting layer 312 embedded in the groove 311c is about 3 mm.
- the heat dissipation substrate material 400 is an example of the “substrate material” in the present invention.
- stepped portions 315a and 315b are formed so as to sandwich the bonding region 313 and the peripheral portions 316a and 316b, and the thick plate portion and the thin plate portion 314 formed of the bonding region 313 and the peripheral portions 316a and 316b Are alternately arranged in the X direction.
- a plurality of portions corresponding to the heat dissipation substrate 301 are formed so as to be aligned in the X direction and the Y direction.
- the other manufacturing process of 2nd Embodiment of this invention is the same as that of the said 1st Embodiment.
- the heat dissipation base 301 includes the light reflecting layer 312 made of Al by the LED element 2 being bonded to the upper surface 312a and the light reflecting layer 312 made of Al. It is possible to suppress a decrease in the amount of reflection of light at. Further, the heat dissipation base material 301 is made of a clad material having a clad structure in which a light reflection layer 312 made of Al and a base material layer 311 made of Cu are roll-bonded to each other, thereby causing light reflection due to pinholes. A decrease in the amount of light reflected by the layer 312 can be suppressed. Moreover, by using the base material layer 311 made of Cu having a high thermal conductivity for the heat dissipation base material 301, it is possible to suppress the deterioration of the light emission characteristics of the LED element 2 due to heat generation.
- the light reflection layer 312 is embedded in the groove 311c, whereby the upper surface 312a of the light reflection layer 312 in the bonding region 313 and the base material layer 311 in the region around the bonding region 313.
- the outer surface 311b of the light reflecting layer 311b is connected in a substantially flat shape, so that the heat generated by the LED element 2 is not only from the lower surface 312b of the light reflecting layer 312 but also in the X direction of the light reflecting layer 312. It can transmit to the base material layer 311 also from both sides. Thereby, the heat generated by the LED element 2 can be radiated more effectively through the base material layer 311.
- the remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.
- the LED module 300 in the modification of the second embodiment of the present invention is made of Cu having a length of about 10 mm in a predetermined direction (X direction) and extending in the Y direction perpendicular to the X direction.
- a Cu plate is prepared.
- a groove 311c (see FIG. 10) having a predetermined length in the X direction is formed to extend in the Y direction at a substantially central portion in the X direction of the Cu plate.
- an Al plate made of Al having substantially the same width as the groove 311c in the X direction and extending in the Y direction is prepared.
- the Cu plate and the Al plate are rolled (rolled) with the Al plate disposed in the groove 311c extending in the Y direction of the Cu plate. Thereafter, by performing diffusion annealing on the Cu plate and the Al plate, as shown in FIG. 10, the clad structure in which the base material layer 311 made of Cu and the light reflecting layer 312 made of Al are joined in the joining region 313 is obtained. By being formed, a heat dissipation substrate material 500 made of a clad material is formed.
- the heat dissipation substrate material 500 is cut along the X direction along the cutting line 500a. Thereby, as shown in FIG. 11, a plurality of heat dissipation substrates 301 are formed. Thereafter, the regions excluding the bonding region 313 and the peripheral portions 316a and 316b of each heat dissipation substrate 301 are coined. Thus, stepped portions 315a and 315b are formed so as to sandwich the bonding region 313 and the peripheral portions 316a and 316b, and the thick plate portion and the thin plate portion 314 formed of the bonding region 313 and the peripheral portions 316a and 316b Is formed.
- the plating layer 16 is formed at a predetermined position of the thin plate portion 314 by plating, and the cutout portion 10a is formed in the heat dissipation substrate 301 by pressing. Thereafter, the base 3 and the reflector 6 are formed by insert molding, and the thin plate portion 314 is bent along the base 3. Thereafter, the LED element 2 is mounted on the heat dissipation substrate 301, and the Au wires 5a and 5b are connected. Then, by disposing the sealing resin 7, one LED module 300 is formed. Finally, the LED module 300 is connected to the printed circuit board 102 using the solders 101a and 101b. Thereby, the LED module 300 connected to the printed circuit board 102 shown in FIG. 8 is manufactured.
- the light reflection layer 12 (312) is arrange
- the present invention is not limited to this. In this invention, you may arrange
- the base material layer 11 (311) is made of Cu having a purity of about 99.9% or more
- the light reflecting layer 12 (312) is made of Al having a purity of about 99% or more.
- the base material layer 11 (311) is made of a Cu alloy having a Cu purity of about 99.9% or less, such as C19400 (CDA standard) made of Cu-2.30Fe-0.10Zn-0.03P. You may comprise so that it may become.
- the light reflecting layer 12 (312) may be made of an Al alloy having an Al purity of about 99% or less.
- the present invention is not limited to this. I can't.
- the entire thickness of the heat dissipation substrate 1 (301) may be made substantially the same. Thereby, since it is not necessary to perform the process for varying thickness with respect to the thermal radiation board
- the thickness t2 of the thin plate portion 14 is about 0.1 mm, but the present invention is not limited to this. In the present invention, the thickness t2 of the thin plate portion 14 may not be about 0.1 mm.
- the thickness t2 of the thin plate portion 14 is preferably about 0.05 mm or more and about 0.5 mm or less, and preferably smaller than the thickness t1 of the bonding region 13 of the base material layer 11.
- the thickness t3 of the light reflection layer 12 was about 10 micrometers, and the thickness t4 of the base material layer 11 was shown to about 0.49 mm, this invention is limited to this. Absent. In the present invention, the thickness t3 of the light reflecting layer 12 may not be about 10 ⁇ m, and the thickness t4 of the base material layer 11 may not be about 0.49 mm.
- the thickness t3 of the light reflecting layer 12 is preferably about 1 ⁇ m or more and about 50 ⁇ m or less, and more preferably about 1 ⁇ m or more and about 10 ⁇ m or less.
- the thickness t3 of the light reflection layer 12 is sufficiently small, heat can be quickly transferred to the base material layer 11 having better heat dissipation than the light reflection layer 12.
- the thickness t4 of the base material layer 11 is about 0.1 mm or more and about 3 mm or less. Furthermore, the thickness t4 of the base material layer 11 is preferably not less than 10 times the thickness t3 of the light reflecting layer 12.
- the base material layer 11 and the light reflecting layer 12 have a width W1 of about 5 mm in the Y direction and a length L1 of about 5 mm in the X direction.
- the present invention is not limited to this.
- the base material layer 11 and the light reflecting layer 12 may be formed to have a width W1 of about 2 mm or more and about 5 mm or less in the Y direction, or about 5 mm or more in the X direction. You may form so that it may have length L1 of 10 mm or less.
- the light reflection layer 312 is formed to have a length L2 of about 3 mm in the X direction.
- the present invention is not limited to this.
- the reflective layer 312 may be formed to have a length L2 of about 2 mm or more and about 3 mm or less in the X direction.
- the light reflecting layer 312 is embedded in the groove 311c, whereby the upper surface 312a of the light reflecting layer 312 in the bonding region 313 and the outer surface 311b of the base material layer 311 in the region around the bonding region 313 are obtained.
- the present invention is not limited to this.
- the upper surface 312a of the light reflecting layer 312 and the outer surface 311b of the base material layer 311 may be connected by a step. At this time, if the upper surface 312a of the light reflecting layer 312 is positioned below the outer surface 311b of the base material layer 311, heat can be transferred from the entire surface of both side surfaces in the X direction of the light reflecting layer 312 to the base material layer 311. This is preferable because it is possible.
- the base 3 and the reflector 6 is an example made of alumina (Al 2 O 3), the present invention is not limited thereto.
- the Cu plate and the Al plate are rolled in a state where an Al plate having substantially the same width as the groove 311c is disposed in each of the plurality of grooves 311c extending in the Y direction of the Cu plate.
- an Al plate having substantially the same width as the groove 311c is disposed in the groove 311c extending in the Y direction of the Cu plate.
- a clad material in which a light reflecting layer made of Al is bonded to the entire surface is formed. Thereafter, the light reflection layer in the region excluding the periphery of the LED element among the light reflection layers bonded to substantially the entire surface on the outer surface of the base material layer is mechanically or chemically removed, whereby the second embodiment. Further, the heat dissipation substrate material 400 (500) of the modification of the second embodiment may be formed.
- the heat dissipation substrate 1 (301) is used for the LED module 100 (300) having the LED element 2 has been described.
- the present invention is not limited to this.
- the heat dissipation substrate 1 (301) may be used for a laser element module that emits laser light.
- 1,301 Heat dissipation substrate (light emitting element substrate, light emitting element substrate body) 2 LED elements (light emitting elements) 3 Base 3a Upper surface 3b Side surface 3c Lower surface 6 Reflector 11, 311 Base material layer 12, 312 Light reflection layer 13, 313 Bonding region 14, 314 Thin plate portion (overhang portion) 15a, 15b, 315a, 315b Stepped portion 16 Plating layer 100, 300 LED module (light emitting module) 316a, 316b Peripheral part (overhang part) 200, 400, 500 Heat dissipation substrate material (substrate material)
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Abstract
Description
まず、図1~図4を参照して、本発明の第1実施形態によるLEDモジュール100の構造について説明する。なお、LEDモジュール100は、本発明の「発光モジュール」の一例である。
次に、図8および図9を参照して、本発明の第2実施形態について説明する。この第2実施形態では、上記第1実施形態とは異なり、LEDモジュール300の放熱基板301における基材層311に形成された溝部311cに、光反射層312が埋め込まれている場合について説明する。なお、LEDモジュール300は、本発明の「発光モジュール」の一例であり、放熱基板301は、本発明の「発光素子用基板」および「発光素子用基板本体」の一例である。
次に、図8、図10および図11を参照して、本発明の第2実施形態の変形例について説明する。この第2実施形態の変形例では、上記第2実施形態とは異なり、放熱基板用材料500において、放熱基板301に対応する部分が、Y方向にのみ複数並ぶように形成される場合について説明する。なお、本発明の第2実施形態の変形例におけるLEDモジュール300の構造(図8参照)は、上記第2実施形態と同様である。なお、放熱基板用材料500は、本発明の「基板用材料」の一例である。
2 LED素子(発光素子)
3 基台
3a 上面
3b 側面
3c 下面
6 リフレクタ
11、311 基材層
12、312 光反射層
13、313 接合領域
14、314 薄板部(張出部)
15a、15b、315a、315b 段差部
16 メッキ層
100、300 LEDモジュール(発光モジュール)
316a、316b 周辺部(張出部)
200、400、500 放熱基板用材料(基板用材料)
Claims (20)
- 発光素子(2)が表面(12a)に配置されるAlまたはAl合金からなる光反射層(12)と、CuまたはCu合金からなる基材層(11)とを備え、
前記基材層は、前記光反射層と接合可能な接合領域(13)を有しており、
前記光反射層は、前記基材層の前記接合領域の全部または一部に対して圧接接合されている、発光素子用基板(1)。 - 前記光反射層は、前記基材層の少なくとも一部に設けられている前記接合領域に形成されている、請求項1に記載の発光素子用基板。
- 前記基材層は、前記接合領域から張り出すように、前記接合領域の前記光反射層と前記基材層との合計の厚み以下の厚みを有する部分が設けられた張出部(14)をさらに有する、請求項1に記載の発光素子用基板。
- 前記張出部は、少なくとも曲げ加工される領域に形成されている、請求項3に記載の発光素子用基板。
- 前記基材層の前記接合領域と前記張出部との間に段差部(15a)が形成されている、請求項3に記載の発光素子用基板。
- 前記基材層の前記張出部における表面の少なくとも一部には、CuまたはCu合金からなる前記基材層よりも半田に対する濡れ性が良好な材料を含むメッキ層(16)が形成されている、請求項3に記載の発光素子用基板。
- 前記クラッド構造を有する発光素子用基板本体(1)は、前記発光素子が配置される側とは反対側から前記発光素子用基板本体を支持する基台(3)の上面(3a)、側面(3b)および下面(3c)を覆うように折り曲げられており、
前記メッキ層は、前記基台の下面を覆う前記発光素子用基板本体の下部と、前記基台の側面を覆う前記発光素子用基板本体の側部とに設けられている、請求項6に記載の発光素子用基板。 - 前記基材層の前記接合領域の厚みは、前記基材層の前記張出部の厚みよりも大きい、請求項3に記載の発光素子用基板。
- 前記基材層の前記接合領域の厚みは、前記光反射層の厚みよりも大きい、請求項1に記載の発光素子用基板。
- 前記基材層の前記接合領域の厚みは、前記光反射層の厚みの10倍以上である、請求項9に記載の発光素子用基板。
- 前記基材層の前記接合領域の厚みは、0.1mm以上3mm以下であり、前記光反射層の厚みは、1μm以上50μm以下である、請求項10に記載の発光素子用基板。
- 前記光反射層の厚みは、1μm以上10μm以下である、請求項11に記載の発光素子用基板。
- 前記光反射層が接合される前記接合領域は、少なくとも前記発光素子を囲むように形成されたリフレクタ(6)に囲まれる領域に形成されている、請求項1に記載の発光素子用基板。
- 前記クラッド構造を有する発光素子用基板本体は、前記発光素子が配置される側とは反対側から前記発光素子用基板本体を支持する基台の上面、側面および下面を覆うように折り曲げられており、
前記段差部は、前記基材層の前記発光素子が配置される側の前記表面に形成されているとともに、前記基材層の前記発光素子が配置される側とは反対側の表面(12b)は、略平坦面状に形成されている、請求項5に記載の発光素子用基板。 - 前記光反射層(312)は、前記基材層(311)に埋め込まれており、
前記基材層に埋め込まれた前記光反射層の前記表面(312a)と、前記接合領域(313)の周囲に位置する前記基材層の表面(311b)とは、略平坦面状に接続されている、請求項1に記載の発光素子用基板(301)。 - 複数の発光素子用基板(1)となる部分を含む基板用材料(200)であって、
前記複数の発光素子用基板の各々は、発光素子(2)が表面(12a)に配置されるAlまたはAl合金からなる光反射層(12)と、CuまたはCu合金からなる基材層(11)とを備え、前記基材層は、前記光反射層と接合可能な接合領域(13)を有しており、前記光反射層は、前記基材層の前記接合領域の全部または一部に対して圧接接合されており、
前記複数の発光素子用基板となる部分は、各々分離可能に構成されている、基板用材料。 - 発光素子(2)と、
前記発光素子が表面(12a)に配置されるAlまたはAl合金からなる光反射層(12)と、CuまたはCu合金からなる基材層(11)とを含み、前記基材層は、前記光反射層と接合可能な接合領域(13)を有しており、前記光反射層は、前記基材層の前記接合領域の全部または一部に対して圧接接合されている発光素子用基板(1)と、
前記基材層の前記光反射層とは反対側が表面(3a)に沿うように配置される基台(3)とを備える、発光モジュール(100)。 - 前記光反射層は、前記基材層の少なくとも一部に設けられている前記接合領域に形成されている、請求項17に記載の発光モジュール。
- 前記基材層は、少なくとも曲げ加工される領域に形成され、前記接合領域から張り出すように、前記接合領域の前記光反射層と前記基材層との合計の厚み以下の厚みを有する部分が設けられた張出部(14)をさらに有し、
前記基材層の張出部は、前記基台の側面(3b)および下面(3c)を覆うように曲げ加工された状態で前記基台に配置されている、請求項17に記載の発光モジュール。 - 前記基材層の前記接合領域と前記張出部との間に段差部(15a)が形成されている、請求項19に記載の発光モジュール。
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JPS607747A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 樹脂封止型半導体装置 |
JP2005197329A (ja) * | 2004-01-05 | 2005-07-21 | Stanley Electric Co Ltd | 表面実装型半導体装置及びそのリードフレーム構造 |
JP2008042064A (ja) * | 2006-08-09 | 2008-02-21 | Matsushita Electric Ind Co Ltd | セラミック配線基板とそれを用いた光学デバイス装置、パッケージおよびセラミック配線基板の製造方法 |
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JPS607747A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 樹脂封止型半導体装置 |
JP2005197329A (ja) * | 2004-01-05 | 2005-07-21 | Stanley Electric Co Ltd | 表面実装型半導体装置及びそのリードフレーム構造 |
JP2008042064A (ja) * | 2006-08-09 | 2008-02-21 | Matsushita Electric Ind Co Ltd | セラミック配線基板とそれを用いた光学デバイス装置、パッケージおよびセラミック配線基板の製造方法 |
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