WO2012132977A1 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- WO2012132977A1 WO2012132977A1 PCT/JP2012/056924 JP2012056924W WO2012132977A1 WO 2012132977 A1 WO2012132977 A1 WO 2012132977A1 JP 2012056924 W JP2012056924 W JP 2012056924W WO 2012132977 A1 WO2012132977 A1 WO 2012132977A1
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- WO
- WIPO (PCT)
- Prior art keywords
- susceptor
- box
- exchange
- vapor phase
- phase growth
- Prior art date
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 24
- 239000003550 marker Substances 0.000 claims description 13
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- the present invention relates to a vapor phase growth apparatus that deposits a thin film on a substrate by supplying a vapor phase material while heating the substrate.
- a thin film is uniformly formed on a plurality of substrates as a vapor phase growth apparatus in which a source gas is supplied into a reaction chamber while a substrate held by a susceptor is heated to a predetermined temperature, and a thin film is deposited (grown) on the substrate surface. Therefore, the vapor phase growth apparatus has a mechanism for rotating the susceptor and rotating the substrate mounting member (substrate tray) on which the substrate is mounted in accordance with the rotation of the susceptor to rotate the substrate during film formation. Is known (see Patent Document 1).
- FIG. 4 is a cross-sectional view of the vapor phase growth apparatus 70 disclosed in Patent Document 1.
- a vapor phase growth apparatus 70 disclosed in Patent Document 1 includes a susceptor 73 made of disc-shaped carbon in a flat cylindrical chamber 72 having a gas introduction pipe 71 disposed at the upper center, and an outer peripheral portion of the susceptor 73.
- the chamber 72 is divided into a chamber main body 77 having an opening on the side opposite to the susceptor side, and a chamber lid 78 that is airtightly mounted on the upper peripheral wall of the chamber main body 77 via an O-ring.
- a rotation drive shaft 79 for rotating the susceptor 73 is provided at the center of the bottom of the chamber body 77, and the substrate holder 74 holding the substrate 80 is rotated by rotating the susceptor 73 with the rotation drive shaft 79.
- a rotation gear mechanism provided on the outer periphery of the susceptor 73 rotates.
- a heater 81 for heating the substrate 80 is disposed in a ring shape below the substrate holder 74, and a ring-shaped exhaust passage 82 is provided on the outer peripheral side of the susceptor 73.
- the susceptor 73 Since the inside of the chamber where the susceptor 73 is installed is not contaminated, it is housed in a box called a glow box and cannot be exposed to the outside air. Therefore, the susceptor 73 is exchanged in an exchange box provided on the side surface of the glow box and capable of adjusting the internal environment to a nitrogen atmosphere.
- Patent Document 2 An example in which the susceptor is replaced by an automatic transfer device is described in Patent Document 2.
- Patent Document 2 although details of the conveyance of the susceptor 73 itself are not described, the following is generally performed.
- a transfer robot installed in the glove box holds the susceptor in the reaction furnace and transfers it to the exchange box.
- the second susceptor waiting in the exchange box is transported from the exchange box to the exchange table.
- the susceptor After placing the substrate on the substrate holder (substrate tray) with the exchange table, the susceptor is transferred from the exchange table to the reaction furnace. In this way, while the first susceptor is grown, the second susceptor is in a two-sheet operation where it stands by in the exchange box.
- the transport robot transports the susceptor while keeping the position (phase) of the susceptor in the exchange box, and sets the susceptor in the chamber.
- the setting of the susceptor in the chamber needs to be performed by accurately aligning the fitting portion provided in the central opening of the susceptor and the fitting portion provided on the rotating shaft side of the chamber. Therefore, if the susceptor is misaligned when it is placed in the replacement box, a situation may occur in which the susceptor does not properly fit on the rotating shaft.
- the susceptor is unintentionally shifted on the exchange table when the susceptor is placed on the exchange table in the glow box and then transported to the chamber, the same problem as described above occurs. Arise.
- the susceptor If the susceptor is not correctly set in the chamber, normal vapor phase growth is impossible. Therefore, it is essential to set the susceptor correctly in the chamber.
- the operator performs alignment of the susceptor in the exchange box.
- this work has a problem that work efficiency is low because it is necessary to be careful.
- the susceptor is transported again, there is a problem that it takes time and the production efficiency is lowered.
- the present invention has been made to solve such problems, and an object of the present invention is to obtain a vapor phase growth apparatus that does not cause a problem of susceptor misalignment when the susceptor is replaced.
- a vapor phase growth apparatus houses a reaction furnace in which a susceptor is detachably installed to perform vapor phase growth, a transfer robot that transfers the susceptor, the transfer robot, and the reaction furnace.
- An air-conditioner comprising a glow box, an exchange table installed in the glow box and temporarily mounting the susceptor when the susceptor is exchanged, and an exchange box provided on a side wall of the glow box for exchanging the susceptor.
- the exchange table includes a positioning device that rotates when the susceptor is placed and stops at a predetermined rotation position to determine a position in the rotation direction of the susceptor.
- the positioning device is provided in the susceptor provided in the vicinity of the rotation mechanism that rotates the susceptor placed on the exchange table and the exchange table. It is characterized by comprising a sensor for detecting a marker and a control device for controlling the rotational position of the exchange table by inputting a signal of the sensor.
- the replacement table installed in the glow box includes a positioning device that determines the position of the susceptor in the rotational direction, the operator does not need to position the susceptor with the replacement box, and the work efficiency is increased. In addition, there is no reduction in work efficiency due to inadequate positioning.
- the vapor phase growth apparatus 1 includes a reaction furnace 5 in which a susceptor 3 is detachably installed and performs vapor phase growth, and a transfer robot (not shown) that transfers the susceptor 3.
- a glow box 9 in which the transfer robot and the reaction furnace 5 are housed, an exchange table 11 that is installed in the glow box 9 and temporarily places the susceptor 3 when the susceptor 3 is exchanged, and a side wall of the glow box 9
- the vapor phase growth apparatus 1 is provided with an exchange box 13 provided to exchange the susceptor 3, and the exchange table 11 rotates when the susceptor 3 is placed and stops at a predetermined rotational position to thereby stop the susceptor.
- 3 is provided with a positioning device 15 (see FIG. 3) for determining the position in the rotational direction. This will be described in detail below.
- the susceptor 3 is configured by a donut-shaped disk having an opening 17 at the center.
- the susceptor 3 is provided with a plurality of pockets 19 in which the substrate placement unit is installed.
- the number of the pockets 19 is not particularly limited. For example, 11 pockets are illustrated in FIG. 1, and 7 pockets are illustrated in FIG.
- a fitting portion 21 is provided in the central opening portion 17 of the susceptor 3, and the susceptor 3 rotates by fitting the fitting portion 21 formed in the opening portion 17 to the rotating shaft side on the reaction furnace 5 side. It has a structure.
- markers 23 are formed on both sides of one pocket 19 serving as a positioning reference on the back surface side of the susceptor 3.
- the position of the pocket 19 can be detected by detecting the marker 23 by a sensor 31 described later.
- the marker 23 has a concave shape that can be identified by the sensor 31 (for example, an ellipse of 10 mm ⁇ 6 mm, a depth of 5 mm).
- the substrate placement portion installed in the pocket 19 is capable of rotating, and a substrate on which a thin film is formed is placed on the substrate placement portion.
- the reactor 5 is a reactor in which the susceptor 3 is detachably installed to perform vapor phase growth.
- the form of the reaction furnace 5 is not specifically limited, For example, what was described in patent document 1, 2 can be applied.
- An outline of one form of the reaction furnace 5 is that the overall shape is a flat cylindrical shape, and includes a lower chamber body and a chamber lid for opening and closing the chamber body.
- a source gas introduction nozzle is installed at the center of the chamber body so that the source gas can be supplied to the substrate placed on the susceptor 3.
- the raw material gas may be introduced from above as in Patent Document 1 or may be introduced from below as in Patent Document 2.
- the outer peripheral edge portion of the chamber main body is a main body flange, and comes into contact with the lid flange of the chamber lid so that the reaction furnace 5 can be hermetically closed.
- the chamber lid is moved up and down with respect to the chamber body by a lifting mechanism.
- a transport robot (not shown) is installed in the glow box 9 and transports the susceptor 3.
- the transfer robot includes a plurality of arms 25 that are rotatably connected by joints, and a holding portion 27 that holds the susceptor 3 is provided on the arm 25 at the tip.
- the transfer robot can transfer the susceptor 3 to the reaction furnace 5, the exchange table 11, and the exchange box 13 by turning each arm 25.
- the glow box 9 accommodates the transfer robot and the reaction furnace 5. Nitrogen gas is supplied to the glow box 9 so that the inside of the box can be replaced with a nitrogen atmosphere.
- An exchange box 13 for exchanging the susceptor 3 is provided on the side surface of the glove box. A vacuum pump and a nitrogen gas supply pipe are connected to the exchange box 13 so that the atmosphere in the exchange box 13 can be replaced with a nitrogen atmosphere.
- the exchange table 11 is installed in the glow box 9 and temporarily places the susceptor 3 when the susceptor 3 is exchanged.
- a positioning device 15 described later is mounted on the exchange table 11.
- the positioning device 15 includes a rotation mechanism 29 that rotates the susceptor 3 placed on the exchange table 11, a sensor 31 that is provided near the exchange table 11 and detects the marker 23 provided on the susceptor 3, And a control device 33 that inputs a signal and controls the rotational position of the exchange table 11.
- the operation at the time of replacement of the susceptor 3 in the present embodiment configured as described above will be described.
- the replacement susceptor 3 is placed in the replacement box 13.
- the operator needs to align the position (phase) of the susceptor 3.
- the susceptor 3 is aligned on the exchange table 11, it is not necessary to align the susceptor 3 when placing it on the exchange box 13.
- the transfer robot holds the susceptor 3 and carries it to the position of the exchange table 11 to place the susceptor 3 on the exchange table 11.
- the exchange table 11 rotates, and the sensor 31 detects the marker 23 on the back surface of the susceptor 3 and transmits a detection signal to the control device 33.
- the control device 33 inputs a detection signal from the sensor 31, controls the rotation mechanism 29 so that the marker detection position becomes a predetermined position, and stops the exchange table 11 at the predetermined position.
- the exchange table 11 stops at a predetermined position the position (phase) alignment of the susceptor 3 placed on the exchange table 11 is completed.
- the sensor 31 irradiates the back surface of the rotating susceptor 3 with a light beam, and the reflected light reflected from the back surface of the susceptor 3 is detected by a detector.
- a marker concave portion
- the presence or absence (intensity) of reflected light is recognized and stopped at a predetermined phase.
- the reliability of marker detection increases.
- the shape of the marker 23 can be recognized by the sensor if it has a diameter of about the sensor light spot diameter (several mm) and a depth of about 5 mm. It is also possible to recognize the number or shape of the markers 23, thereby enabling susceptor identification.
- the substrate mounting portion and the substrate are set in the pocket 19 of the susceptor 3.
- the susceptor 3 is held by the transfer robot and transferred to the reaction furnace 5, and the opening 17 of the susceptor 3 is installed in alignment with the rotation axis of the reaction furnace 5.
- the susceptor 3 since the phase of the susceptor 3 is aligned at a correct position on the exchange table 11, the susceptor 3 does not depend on the rotation axis of the reaction furnace 5 due to the phase shift of the susceptor 3.
- the susceptor 3 is automatically aligned in the exchange table 11, the following effects can be obtained.
- the position of the susceptor 3 is automatically adjusted to the correct position in the exchange table 11, there is no case where the susceptor 3 cannot be set due to a positional shift when the susceptor 3 is set in the reaction furnace 5.
- the susceptor 3 in the replacement box 13 is not correct, the susceptor 3 is not correctly set in the reaction furnace 5, and after being returned to the replacement box 13 and aligned. Therefore, it has to be transported again, and wasteful time is required, resulting in a reduction in production efficiency.
- this embodiment since such a useless time does not occur, there is an effect that the production efficiency is improved.
- the marker 23 provided on the susceptor 3 is used only for recognizing the position of the susceptor 3.
- the shape of the marker 23 may be changed for each susceptor 3 so that the susceptor 3 can be individually identified in addition to the recognition of the position of the susceptor 3. In this way, by preparing a vapor phase growth program in which reaction conditions and the like are set in advance for each susceptor 3, a vapor phase growth reaction can be performed under conditions most suitable for the susceptor 3.
- the present invention particularly relates to a semiconductor manufacturing apparatus for forming a compound semiconductor, and can be used to improve the quality of a semiconductor manufactured by the apparatus.
- vapor phase growth device 3 susceptor 5 reactor 9 glow box 11 exchange table 13 exchange box 15 positioning device 17 opening 19 pocket 21 fitting portion 23 marker 25 arm 27 holding portion 29 rotating mechanism 31 sensor 33 control device 70 vapor phase growth Apparatus 71 gas introduction pipe 72 chamber 73 susceptor 74 substrate holder 75 reaction chamber 77 chamber body 78 chamber lid 79 rotation drive shaft 80 substrate 81 heater
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Abstract
Description
本願は、2011年3月31日に、日本に出願された特願2011-077390号に基づき優先権を主張し、その内容をここに援用する。
また、基板ホルダー74の下方には、基板80を加熱するためのヒーター81がリング状に配設され、サセプタ73の外周側にはリング状の排気通路82が設けられている。
グローブボックス内に設置された搬送ロボットによって、反応炉内にあるサセプタを保持して交換ボックスに搬送する。一方、交換ボックスで待機している2枚目のサセプタを交換ボックスから交換テーブルへ搬送する。交換テーブルで基板ホルダ(基板トレイ)上に基板を載置した後、交換テーブルから反応炉へサセプタを搬送する。このように、1枚目のサセプタで成長させている間、2枚目のサセプタは交換ボックスで待機しているという2枚運用である。
サセプタのチャンバーヘのセットは、サセプタの中心開口部に設けられた嵌合部とチャンバーの回転軸側に設けられた嵌合部を正確に位置合わせして行う必要がある。
そのため、サセプタを交換ボックス内に載置した際に位置ずれが生じていると、サセプタが回転軸に正しく嵌らない事態が生ずる。
また、サセプタをグローボックス内の例えば交換テーブルに載置してからチャンバーに搬送する場合において、交換テーブル上で意図せずにサセプタの位相がずれてしまった場合には、上記と同様の問題が生ずる。
しかしながら、従来例では、サセプタの位置合わせは交換ボックスにおいて作業者が行っていたが、この作業は慎重を期する必要から作業効率が悪いという問題がある。
また、仮に交換ボックスにおいて位置ずれが生じていたような場合には、サセプタの位置合わせをやり直す必要があるが、そのためには一旦サセプタを交換ボックスに戻して位置合わせをした後、再度サセプタを搬送し直す必要がある。
しかし、サセプタを再搬送するとなると、時間を要し、生産効率が低下するという問題がある。
前記交換テーブルは、前記サセプタが載置されると回転して所定の回転位置で停止することでサセプタの回転方向の位置を決める位置決め装置を備えてなることを特徴とするものである。
以下詳細に説明する。
サセプタ3は、図2に示すように、中央に開口部17を有する全体形状がドーナツ状の円盤によって構成されている。
サセプタ3には基板載置部が設置される複数のポケット19が設けられている。ポケット19の数は特に限定されず、例えば図1においては11個のものが図示され、図2では7個のものが図示されている。
サセプタ3の中央の開口部17には嵌合部21が設けられており、サセプタ3は開口部17に形成された嵌合部21が反応炉5側の回転軸側に嵌合して回転する構造になっている。
ポケット19に設置される基板載置部は、自転可能になっており、基板載置部に薄膜が形成される基板が載置される。サセプタ3は、反応炉5にセットされると、図示しない駆動機構によってサセプタ3全体が公転(回転)し、この公転に連動して基板載置部が自転する機構になっている。
反応炉5はサセプタ3が着脱可能に設置されて気相成長を行うものである。反応炉5の形態は特に限定されるものではなく、例えば特許文献1、2に記載されたものが適用できる。
反応炉5の一形態を概説すると、全体形状が偏平円筒状をしており、下部側のチャンバー本体と、チャンバー本体を開閉するチャンバー蓋とを備えている。
チャンバー本体の中心部には、原料ガス導入ノズルが設置され、サセプタ3に載置された基板に原料ガスを供給できるようになっている。原料ガス導入は、例えば特許文献1のように上方から導入する形態でもよいし、特許文献2のように下方から導入する形態でもよい。
チャンバー本体の外周縁部は本体部フランジとなっており、チャンバー蓋の蓋部フランジと当接して反応炉5を気密に閉止できるようになっている。チャンバー蓋は、昇降機構によってチャンバー本体に対して昇降するようになっている。
搬送ロボット(図示しない)は、グローボックス9内に設置されて、サセプタ3を搬送する。搬送ロボットは、図1に示すように、複数の腕25が関節で回転可能に連結され、先端の腕25にサセプタ3を保持する保持部27が設けられている。
搬送ロボットは、各腕25を旋回させることで、サセプタ3を反応炉5、交換テーブル11、交換ボックス13のそれぞれに搬送することができる。
グローボックス9は、搬送ロボット及び反応炉5を収容する。グローボックス9には、窒素ガスを供給して、ボックス内を窒素雰囲気に置換できるようになっている。
グローブボックスの側面には、サセプタ3の交換を行う交換ボックス13が設けられている。交換ボックス13には、真空ポンプや窒素ガス供給管が接続され、交換ボックス13内の雰囲気を窒素雰囲気に置換できるようになっている。
交換テーブル11は、グローボックス9内に設置されてサセプタ3の交換時にサセプタ3を一時的に載置するものである。交換テーブル11には、後述する位置決め装置15が搭載されている。
位置決め装置15は、交換テーブル11に載置されたサセプタ3を回転させる回転機構29と、交換テーブル11の近傍に設けられてサセプタ3に設けられたマーカー23を検出するセンサ31と、センサ31の信号を入力して交換テーブル11の回転位置を制御する制御装置33とを備えている。
交換用のサセプタ3が交換ボックス13内に載置される。このとき、従来例ではサセプタ3の位置決めを交換ボックス13で行うようにしていたので、作業者はサセプタ3の位置(位相)合わせをする必要があった。しかし、本実施の形態では、交換テーブル11においてサセプタ3の位置合わせが行われるので、交換ボックス13にサセプタ3を載置する際には、位置合わせを行う必要がない。
センサ31は回転するサセプタ3の裏面に光線を照射し、サセプタ3の裏面から反射してくる反射光を検出器で検出する。サセプタ3の裏面にマーカー(凹部)を設けることで反射光の有無(強度)を認識し、所定の位相で停止する。マーカー23の個数が複数個あると、マーカー検出の信頼性が高まる。マーカー23の形状は、センサ光スポット径程度(数mm)の直径があり5mm程度の深さがあればセンサで認識可能である。マーカー23の個数あるいは形状を認識させることもでき、それによってサセプタ識別を行うことも可能である。
まず、交換テーブル11において、作業者がサセプタ3の位置合わせをする必要がなくなるので、作業効率が向上する。
また、交換テーブル11においてサセプタ3の位置を自動的に正しい位置に合わせるため、反応炉5にサセプタ3をセットする際に位置ずれのためにサセプタ3のセットができないということがない。
この点、従来例では、交換ボックス13におけるサセプタ3の位置が正しくなっていない場合には、反応炉5にサセプタ3が正しくセットされず、再度、交換ボックス13に戻して位置合わせを行ったあとで、再度搬送しなければならず、無駄な時間を要することになり生産効率が低下していた。
これに対して、本実施の形態では、このような無駄な時間が発生しないので、生産効率が向上するという効果がある。
しかし、マーカー23の形状をサセプタ3ごとに変えるようにして、サセプタ3の位置の認識に加えてサセプタ3を個体識別ができるようにしてもよい。このようにすれば、サセプタ3ごとに反応条件等を予め設定した気相成長プログラムを準備しておくことで、当該サセプタ3に最も適した条件での気相成長反応を実施することができる。
3サセプタ
5反応炉
9グローボックス
11交換テーブル
13交換ボックス
15位置決め装置
17開口部
19ポケット
21嵌合部
23マーカー
25腕
27保持部
29回転機構
31センサ
33制御装置
70気相成長装置
71ガス導入管
72チャンバー
73サセプタ
74基板ホルダー
75反応室
77チャンバー本体
78チャンバー蓋
79回転駆動軸
80基板
81ヒーター
Claims (2)
- サセプタが着脱可能に設置されて気相成長を行う反応炉と、前記サセプタを搬送する搬送ロボットと、該搬送ロボット及び前記反応炉が収容されるグローボックスと、該グローボックス内に設置されてサセプタの交換時にサセプタを一時的に載置する交換テーブルと、前記グローボックスの側壁に設けられてサセプタの交換を行う交換ボックスとを備えた気相成長装置であって、
前記交換テーブルは、前記サセプタが載置されると回転して所定の回転位置で停止することで前記サセプタの回転方向の位置を決める位置決め装置を備えてなることを特徴とする気相成長装置。 - 前記位置決め装置は、交換テーブルに載置されたサセプタを回転させる回転機構と、前記交換テーブルの近傍に設けられて前記サセプタに設けられたマーカーを検出するセンサと、該センサの信号を入力して前記交換テーブルの回転位置を制御する制御装置とを備えてなることを特徴とする請求項1記載の気相成長装置。
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US14/008,401 US20140014039A1 (en) | 2011-03-31 | 2012-03-16 | Vapor-phase growth apparatus |
CN2012800130555A CN103443912A (zh) | 2011-03-31 | 2012-03-16 | 气相生长装置 |
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US9816184B2 (en) * | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
JP6068255B2 (ja) * | 2013-05-13 | 2017-01-25 | 大陽日酸株式会社 | 気相成長装置および気相成長装置の部材搬送方法 |
CN107818932B (zh) * | 2013-09-09 | 2020-02-14 | 北京北方华创微电子装备有限公司 | 转盘定位装置、装载传输系统及等离子体加工设备 |
JP6373703B2 (ja) * | 2014-09-26 | 2018-08-15 | 大陽日酸株式会社 | 気相成長装置 |
CN105762092B (zh) * | 2014-12-16 | 2019-02-19 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
US9748113B2 (en) | 2015-07-30 | 2017-08-29 | Veeco Intruments Inc. | Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system |
JP7081919B2 (ja) * | 2017-12-26 | 2022-06-07 | 株式会社ディスコ | 加工装置 |
TW201946581A (zh) * | 2018-05-14 | 2019-12-16 | 瑞士商雀巢製品股份有限公司 | 用於施配飲料前驅物的個別分份的設備以用於由其製備飲料 |
JP7169786B2 (ja) * | 2018-06-25 | 2022-11-11 | 東京エレクトロン株式会社 | メンテナンス装置 |
JP7389076B2 (ja) | 2021-03-22 | 2023-11-29 | 大陽日酸株式会社 | 基板搬送機構及びこれを用いた基板搬送方法 |
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- 2012-03-16 CN CN2012800130555A patent/CN103443912A/zh active Pending
- 2012-03-16 WO PCT/JP2012/056924 patent/WO2012132977A1/ja active Application Filing
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TW201250048A (en) | 2012-12-16 |
JP5791329B2 (ja) | 2015-10-07 |
US20140014039A1 (en) | 2014-01-16 |
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