WO2012121542A3 - Cigs 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법 - Google Patents

Cigs 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법 Download PDF

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WO2012121542A3
WO2012121542A3 PCT/KR2012/001653 KR2012001653W WO2012121542A3 WO 2012121542 A3 WO2012121542 A3 WO 2012121542A3 KR 2012001653 W KR2012001653 W KR 2012001653W WO 2012121542 A3 WO2012121542 A3 WO 2012121542A3
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molybdenum
sputtering target
manufacturing
solar cell
temperature
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PCT/KR2012/001653
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French (fr)
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WO2012121542A2 (ko
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오익현
박현국
이승민
양준모
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한국생산기술연구원
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Priority to US14/002,666 priority Critical patent/US9506141B2/en
Priority to JP2013557645A priority patent/JP5789002B2/ja
Publication of WO2012121542A2 publication Critical patent/WO2012121542A2/ko
Publication of WO2012121542A3 publication Critical patent/WO2012121542A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
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    • B22F3/1028—Controlled cooling
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/541—CuInSe2 material PV cells
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  • Mechanical Engineering (AREA)
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  • Metallurgy (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

본 발명은 CIGS 태양전지요 몰리브덴 스퍼터링 타겟 제조방법에 관한 것으로서, 몰리브덴 분말을 그라파이트 소재로 된 몰드 내에 충진하는 단계와, 몰리브덴 분말이 충진된 몰드를 방전 플라즈마 소결 장치의 챔버 내부에 장착하는 단계와, 챔버 내부를 진공화하는 단계와, 몰드 내의 몰리브덴 분말에 일정한 압력을 유지하면서 설정된 승온패턴에 따라 승온시키면서 최종 목표온도에 도달할 때까지 성형하는 성형 단계와, 최종 목표온도를 1 내지 10분 더 유지하는 단계와, 일정 압력을 유지하면서 상기 챔버 내부를 냉각하는 냉각 단계를 포함한다. 이러한 CIGS 태양전지용 몰리브덴 스퍼터링 타겟 제조방법에 의하면, 방전 플라즈마 소결 공정을 이용하여 스퍼터링 타겟에 적합하게 소결체 제조시 고밀도화가 가능하고 단일 공정으로 짧은 시간에 입자 성장이 거의 없는 균질한 조직, 및 고순도를 갖는 소결체를 제조할 수 있는 이점이 있다.
PCT/KR2012/001653 2011-03-08 2012-03-07 Cigs 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법 WO2012121542A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/002,666 US9506141B2 (en) 2011-03-08 2012-03-07 Method for manufacturing a molybdenum sputtering target for back electrode of CIGS solar cell
JP2013557645A JP5789002B2 (ja) 2011-03-08 2012-03-07 Ｃｉｇｓ太陽電池の背面電極用モリブデンスパッタリングターゲットの製造方法

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Application Number Priority Date Filing Date Title
KR1020110020586A KR101259599B1 (ko) 2011-03-08 2011-03-08 Ｃｉｇｓ 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법
KR10-2011-0020586 2011-03-08

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WO2012121542A2 WO2012121542A2 (ko) 2012-09-13
WO2012121542A3 true WO2012121542A3 (ko) 2012-11-01

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US (1) US9506141B2 (ko)
JP (1) JP5789002B2 (ko)
KR (1) KR101259599B1 (ko)
WO (1) WO2012121542A2 (ko)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
KR101483254B1 (ko) * 2013-07-15 2015-01-15 한국생산기술연구원 스퍼터링 타겟용 4성분계 셀렌화합물 소결체 및 그 제조방법
US10047434B2 (en) * 2014-06-19 2018-08-14 Kewei Molybdenum And Tungsten Co., Ltd Method for preparing ultra-long-tube type fine-grain molybdenum tube target
KR20180045100A (ko) * 2016-10-24 2018-05-04 한국생산기술연구원 Pvd 코팅공정용 다성분계 합금타겟 제조방법
CN110148639B (zh) * 2019-05-15 2021-05-14 安徽正熹标王新能源有限公司 一种CIGS薄膜太阳能电池用Mo背电极的制备方法
CN110273149B (zh) * 2019-07-31 2021-06-01 安徽工业大学 一种钼基合金涂层及具有该合金涂层的基体
CN112813397B (zh) * 2020-12-31 2023-06-30 金堆城钼业股份有限公司 一种钼钠合金板状靶材的制备方法

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KR20070057225A (ko) * 2004-08-31 2007-06-04 에이치. 씨. 스타아크 아이앤씨 몰리브덴 스퍼터링 타겟
US20080193798A1 (en) * 2004-08-31 2008-08-14 H. C. Starck Inc. Molybdenum Tubular Sputtering Targets with Uniform Grain Size and Texture
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US20130336831A1 (en) 2013-12-19
US9506141B2 (en) 2016-11-29
WO2012121542A2 (ko) 2012-09-13
JP5789002B2 (ja) 2015-10-07
KR101259599B1 (ko) 2013-04-30
JP2014514438A (ja) 2014-06-19

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