WO2012121030A1 - Capteur de pression absolue - Google Patents
Capteur de pression absolue Download PDFInfo
- Publication number
- WO2012121030A1 WO2012121030A1 PCT/JP2012/054584 JP2012054584W WO2012121030A1 WO 2012121030 A1 WO2012121030 A1 WO 2012121030A1 JP 2012054584 W JP2012054584 W JP 2012054584W WO 2012121030 A1 WO2012121030 A1 WO 2012121030A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- pressure sensor
- cavity
- absolute pressure
- thickness
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 208
- 229910052710 silicon Inorganic materials 0.000 claims description 77
- 239000010703 silicon Substances 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 62
- 238000005304 joining Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 239000001307 helium Substances 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000035882 stress Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
La présente invention concerne un capteur de pression absolue (1) qui est formé par la jonction d'un substrat de chapeau (20) de manière à fermer une cavité (13) avec un substrat de capteur (10) dans lequel est formée une pluralité de piézorésistances (12, 12) sur le bord d'une membrane (11), et la cavité (13) est formée à la surface qui se situe sur le côté inverse de la surface où sont formées les piézorésistances (12, 12). L'épaisseur (T2) de la cavité (13) correspond au moins à l'épaisseur (T3) du substrat de chapeau (20). Il en résulte qu'il est possible de proposer un capteur de pression absolue qui peut être d'une épaisseur globale réduite.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-053620 | 2011-03-10 | ||
| JP2011053620A JP2012189460A (ja) | 2011-03-10 | 2011-03-10 | 絶対圧力センサ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012121030A1 true WO2012121030A1 (fr) | 2012-09-13 |
Family
ID=46797999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2012/054584 WO2012121030A1 (fr) | 2011-03-10 | 2012-02-24 | Capteur de pression absolue |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2012189460A (fr) |
| WO (1) | WO2012121030A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6230049B2 (ja) * | 2012-10-09 | 2017-11-15 | 国立大学法人 香川大学 | 内視鏡フード、内視鏡および内視鏡用圧力センサ |
| JP6218330B2 (ja) * | 2014-07-04 | 2017-10-25 | アルプス電気株式会社 | 圧力センサ及びその製造方法 |
| JP6440488B2 (ja) * | 2014-12-24 | 2018-12-19 | セイコーインスツル株式会社 | 脈波測定装置及び脈波測定方法 |
| JP6474619B2 (ja) * | 2015-01-15 | 2019-02-27 | 国立大学法人 東京大学 | 圧力測定装置および圧力測定方法 |
| JP6300773B2 (ja) * | 2015-10-23 | 2018-03-28 | 三菱電機株式会社 | 半導体圧力センサ |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03112168A (ja) * | 1989-09-26 | 1991-05-13 | Nippondenso Co Ltd | 半導体ピエゾセンサ |
| JPH04328434A (ja) * | 1991-04-30 | 1992-11-17 | Hitachi Ltd | 複合センサ |
| JPH10160602A (ja) * | 1996-11-28 | 1998-06-19 | Denso Corp | 半導体式圧力センサ |
| WO2007058010A1 (fr) * | 2005-11-15 | 2007-05-24 | Mitsubishi Electric Corporation | Capteur de pression a semi-conducteur et son procede de fabrication |
| JP2007147374A (ja) * | 2005-11-25 | 2007-06-14 | Mitsubishi Electric Corp | 圧力センサ |
-
2011
- 2011-03-10 JP JP2011053620A patent/JP2012189460A/ja not_active Withdrawn
-
2012
- 2012-02-24 WO PCT/JP2012/054584 patent/WO2012121030A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03112168A (ja) * | 1989-09-26 | 1991-05-13 | Nippondenso Co Ltd | 半導体ピエゾセンサ |
| JPH04328434A (ja) * | 1991-04-30 | 1992-11-17 | Hitachi Ltd | 複合センサ |
| JPH10160602A (ja) * | 1996-11-28 | 1998-06-19 | Denso Corp | 半導体式圧力センサ |
| WO2007058010A1 (fr) * | 2005-11-15 | 2007-05-24 | Mitsubishi Electric Corporation | Capteur de pression a semi-conducteur et son procede de fabrication |
| JP2007147374A (ja) * | 2005-11-25 | 2007-06-14 | Mitsubishi Electric Corp | 圧力センサ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012189460A (ja) | 2012-10-04 |
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