WO2012115072A1 - 炭素材料及びその製造方法 - Google Patents

炭素材料及びその製造方法 Download PDF

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WO2012115072A1
WO2012115072A1 PCT/JP2012/054042 JP2012054042W WO2012115072A1 WO 2012115072 A1 WO2012115072 A1 WO 2012115072A1 JP 2012054042 W JP2012054042 W JP 2012054042W WO 2012115072 A1 WO2012115072 A1 WO 2012115072A1
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Prior art keywords
carbon material
carbon
chromium carbide
particles
carbide layer
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English (en)
French (fr)
Japanese (ja)
Inventor
薫 瀬谷
紘明 松永
章義 武田
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Toyo Tanso Co Ltd
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Toyo Tanso Co Ltd
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Priority to US13/983,788 priority Critical patent/US8896099B2/en
Priority to CN2012800059979A priority patent/CN103328411A/zh
Priority to KR1020137024604A priority patent/KR20140057477A/ko
Priority to EP12749856.6A priority patent/EP2679565A1/en
Publication of WO2012115072A1 publication Critical patent/WO2012115072A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/4519—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application application under an other specific atmosphere
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/4545—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied as a powdery material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057—Carbides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation

Definitions

  • the present invention relates to a carbon material and a method for producing the same, and more particularly, to a carbon material that is surface-modified and suppressed from generating particles and a method for producing the same.
  • the carbon material is lightweight, has excellent chemical and thermal stability, and has good thermal and electrical conductivity while being non-metallic. However, since it has dust generation properties, its use is limited as a material in a semiconductor manufacturing process or the like.
  • Patent Document 1 and Patent Document 2 an invention in which a chromium carbide layer made of Cr 23 C 6 is provided on the surface of a carbon substrate by treating the carbon substrate with a chromium halide gas. Proposed.
  • chromium carbide having a large composition ratio of chromium such as Cr 23 C 6 is formed, the hardness of the chromium carbide is increased and defects are likely to occur during handling.
  • particles are generated, there is a problem that it cannot be used for a member (for example, a jig) used in the semiconductor manufacturing apparatus, such as a member in which low dust generation is regarded as important.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a carbon material that can be used in the field of semiconductor manufacturing and the like and a method for manufacturing the same by suppressing the generation of particles. .
  • the present invention is characterized in that, in a carbon material in which a chromium carbide layer is formed on the surface of a carbon base material, the chromium carbide layer contains Cr 3 C 2 as a main component. If the chromium carbide layer is mainly composed of Cr 3 C 2 , the composition ratio of chromium is smaller than that of Cr 23 C 6 (the composition ratio of the carbon ratio is increased), so the hardness is lowered (becomes flexible). ), It becomes difficult to cause defects due to handling. As a result, the generation of particles (dust generation) can be suppressed, so that the carbon material can be used in fields where low dust generation is important, such as the semiconductor manufacturing field. Note that “Cr 3 C 2 as a main component” refers to a case where the ratio of Cr 3 C 2 in the chromium carbide layer exceeds 50 wt%.
  • the carbon material after washing was subjected to ultrasonication in 3000 mL of pure water to extract particles, and the number of particles was measured with a particle counter.
  • the number of particles is preferably less than 100 per 100 mm 2 of the surface area of the carbon material, and more preferably less than 50.
  • the cleaned carbon material is subjected to ultrasonication in 3000 mL of pure water to extract particles, and when the number of particles is measured with a particle counter, 0.1 ⁇ m or more
  • the number of particles is preferably less than 1000 per 100 mm 2 of the surface area of the carbon material, and more preferably less than 500.
  • the chromium carbide layer preferably has an orthorhombic structure.
  • the present invention provides a first step of forming a chromium carbide layer containing chromium carbide other than Cr 3 C 2 on the surface of the carbon base material, and the carbon base material in a reducing atmosphere. heat treatment under, and having a second step to convert the chromium carbide other than the Cr 3 C 2 to Cr 3 C 2.
  • the carbon material mentioned above can be produced by such a method.
  • the chromium carbide layer before over-heat treatment may be contained is chromium carbide other than Cr 3 C 2, therefore, it is composed of only chromium carbide other than Cr 3 C 2, and Cr 3 C 2 cr 3 C 2 other than chromium carbide may be configured with.
  • the carbon base material embedded in the surface modifier containing the chromium particles and the thermally decomposable hydrogen halide generator is heated together with a carbon member other than the carbon base material. It is desirable to form a chromium carbide layer containing chromium carbide other than Cr 3 C 2 on the surface of the material. With such a method, the chromium carbide layer can be easily formed.
  • the chromium carbide other than Cr 3 C 2 is preferably composed of at least one selected from the group consisting of Cr 2 C, Cr 7 C 3 , and Cr 23 C 6 , and the reducing atmosphere is A hydrogen gas atmosphere is desirable.
  • the heat treatment in the second step is desirably performed at 500 ° C. or higher and 1500 ° C. or lower.
  • the temperature during the heat treatment in the second step is regulated to 500 ° C. or more and 1500 ° C. or less, while Cr 2 C or the like may not be converted to Cr 3 C 2 when the temperature is less than 500 ° C. This is because, even if the temperature exceeds 1500 ° C., the conversion rate cannot be increased any more, and the energy loss increases and the production cost of the carbon material increases.
  • the temperature is particularly preferably 800 ° C. or higher and 1100 ° C. or lower.
  • the heat treatment in the second step is desirably performed under a reduced pressure of 10 to 1000 Pa.
  • the reason for regulating in this way is that if the pressure exceeds 1000 Pa or less than 10 Pa, the cost of the gas used for the apparatus and processing becomes too high, so it is not practical.
  • a pressure of 10 to 1000 Pa is preferable because the structure on the apparatus is simplified and the conversion effect can be sufficiently exerted.
  • the above chromium carbide layer after the treatment it is preferable that a orthorhombic consisting mainly of Cr 3 C 2.
  • a carbon material can be used even in the semiconductor manufacturing field where importance is placed on low dust generation.
  • the carbon material of the present invention is used as a jig in the field of semiconductor manufacturing, there is an excellent effect that it is possible to prevent adhesion of particles to the counterpart material.
  • the present invention is a carbon material having a chromium carbide layer composed of Cr 3 C 2 on the surface of a carbon substrate.
  • This carbon material is prepared by passing through the surface of the carbon substrate, a first step of forming a chromium carbide layer comprising chromium carbide other than Cr 3 C 2, a second step of heat treatment in a reducing atmosphere be able to.
  • a chromium carbide layer containing chromium carbide other than Cr 3 C 2 hereinafter, a chromium carbide layer containing chromium carbide other than Cr 3 C 2 may be simply referred to as a chromium carbide layer
  • a chromium carbide layer is used for the carbon base material.
  • the heat treatment in the second step is preferably performed in a temperature range of 500 ° C. to 1500 ° C. under a reduced pressure of 10 to 1000 Pa.
  • the carbon material before the heat treatment will be described.
  • the carbon material (the carbon material before the heat treatment in the second step) is, for example, carbon embedded in a surface modifier (powder) containing chromium particles and a pyrolytic hydrogen halide generator.
  • the substrate can be produced by heat treatment together with a carbon member other than the carbon substrate (first step).
  • the carbon member include containers made of carbon such as a graphite crucible, carbon powder, and the like.
  • the chromium carbide layer can be formed almost uniformly on the carbon base material with no color unevenness by the treatment for less than 1 hour.
  • This chromium carbide layer can be sufficiently formed in 30 minutes.
  • This treatment time may be longer, for example, 1 hour or longer when the chromium carbide layer needs to be thickened.
  • the carbon substrate is not particularly limited, and examples thereof include isotropic graphite materials, anisotropic graphite materials, and carbon fiber materials.
  • This carbon substrate preferably has a bulk density of 1.0 to 2.1 g / cm 3 and preferably has a porosity of 40% or less.
  • the above-mentioned thermally decomposable hydrogen halide generator is a substance that maintains a solid state at normal temperature and pressure and decomposes by heating to generate hydrogen halides such as hydrogen chloride, hydrogen fluoride, and hydrogen bromide.
  • the thermal decomposition temperature of the thermally decomposable hydrogen halide generator is preferably 200 ° C. or higher because it is easy to handle before heating.
  • the hydrogen halide generated from the thermally decomposable hydrogen halide generator reacts with chromium during the heat treatment to generate chromium halide gas. By treating the carbon substrate with this chromium halide gas, a chromium carbide layer can be formed on the surface of the carbon substrate.
  • the carbon substrate is treated with gas in this way, a chromium carbide layer is formed almost uniformly on the carbon substrate even when it has a complicated shape such as holes and grooves formed in the carbon substrate. can do.
  • ammonium chloride is preferable because of its availability.
  • Examples of the carbon member include a container made of carbon, such as a graphite crucible, and carbon powder.
  • a container made of carbon such as a graphite crucible, and carbon powder.
  • a graphite crucible As the carbon member.
  • a graphite crucible when processing, it is possible to suppress the flow of gas around the embedded carbon base material, and to form a chromium carbide layer more uniformly on the surface of the carbon base material without color unevenness. it can. Further, since the gas generated from the powder can be kept to some extent in the graphite crucible, the generated gas can be used effectively.
  • the graphite crucible is preferably covered with this lid, and the gas flow around the carbon substrate can be further suppressed by this lid. Examples of the lid include those made of graphite, sheets made of graphite, and the like. In order to escape the gas generated in the container, it is preferable to provide a vent hole in the container or the lid. In addition, when using the sheet
  • the container When carbon powder is used as the carbon member, the container is filled with powder containing chromium particles, a pyrolytic hydrogen halide generator and carbon powder, and the carbon base material is embedded in the powder filled in the container. What is necessary is just to heat-process.
  • a container when using carbon powder as this carbon member, a container is not specifically limited. And when processing, you may suppress the flow of the gas in a container, such as covering or covering with a sheet of graphite. Moreover, you may use said graphite crucible as a container.
  • ⁇ Introduced gas is not directly blown into the container in which the carbon substrate is embedded. On the contrary, even if it is going to process while introducing hydrogen gas, containers, such as a graphite crucible, obstruct hydrogen gas, and it is difficult to perform processing using hydrogen gas efficiently.
  • the apparatus When used for manufacture of carbon material (carbon material before performing heat treatment in the second step)
  • the apparatus includes a heating furnace 1 having a heater, and a processed product placed in the heating furnace 1 Is to be heat-treated.
  • the heating furnace 1 is provided with an intake port 4 and an exhaust port 5.
  • An inert gas such as nitrogen gas or argon gas can be introduced from the intake port 4, while the inert gas or the like is naturally exhausted from the exhaust port 5.
  • a graphite crucible 6 is arranged in the heating furnace 1.
  • the graphite crucible 6 is filled with powder (surface modifying agent) 3, and the carbon substrate 2 to be processed is embedded in the filled powder 3.
  • the powder 3 contains a thermally decomposable hydrogen halide generator and chromium particles.
  • the graphite crucible 6 is covered with a lid 7, and the lid 7 is provided with a vent hole.
  • the graphite crucible 6 as a carbon member is filled with the powder 3, and the filled powder 3
  • the carbon base material 2 is embedded in the lid 7.
  • this graphite crucible 6 is arrange
  • the pressure in the apparatus is reduced to 10 Pa or more and 10,000 Pa or less using a vacuum pump.
  • a reducing gas such as H 2 gas from the intake port 4
  • the temperature in the apparatus is raised to 500 ° C. or higher and 1500 ° C. or lower (preferably 800 ° C. or higher and 1100 ° C. or lower).
  • heat treatment is performed.
  • the reason for this restriction is that if the heat treatment time is less than 1 minute, Cr 2 C, Cr 7 C 3 , Cr 23 C 6, etc. may not be converted to Cr 3 C 2. This is because the conversion is sufficiently performed in 30 hours.
  • the heat treatment time in the second step is particularly preferably 5 hours or more and 25 hours or less.
  • the amount of chromium needs to be changed according to the surface area of the carbon substrate, but is restricted to about 0.6 to 0.9 g (particularly 0.7 to 0.8 g) per 1 cm 2 of the carbon substrate. Is preferred. This is because a chromium carbide layer having a film thickness described later can be obtained by regulating in this way.
  • the weight ratio of chromium powder to ammonium chloride is preferably regulated to 6: 1 to 7: 1.
  • the amount of ammonium chloride powder is too small, a chromium carbide layer is not sufficiently formed on the carbon substrate, while when the amount of ammonium chloride powder is too large, the generation of the metal carbide layer becomes insufficient due to excessive supply of hydrogen halide. This is because.
  • the weight ratio of chromium powder to ammonium chloride is 6: 1 to 7: 1.
  • the thickness of the chromium carbide layer is preferably 1 ⁇ m or more and 50 ⁇ m or less. This is because when the thickness of the chromium carbide layer is less than 1 ⁇ m, there is a problem that it is difficult to modify the entire surface of the carbon to be processed, whereas when the thickness of the chromium carbide layer exceeds 50 ⁇ m. This is because the dimensional change of the final carbon material becomes too large, which may cause a disadvantage that the dimensional control is difficult.
  • the carbon material before heat processing is produced.
  • the temperature in the said heat processing is 1000 degreeC, and processing time is 30 minutes.
  • the film thickness of the chromium carbide layer was 2 to 3 ⁇ m, and the chromium carbide layer was substantially composed of Cr 2 C.
  • the carbon material produced as described above is directly placed in the apparatus, and then the pressure in the apparatus is reduced to 150 Pa using a vacuum pump.
  • heat treatment was performed by introducing the H 2 gas from the intake port 4 while raising the temperature in the apparatus to 1100 ° C. and maintaining such a state for 20 hours.
  • the Cr 2 C was converted to Cr 3 C 2
  • the chromium carbide layer was composed mainly of Cr 3 C 2 as shown in Experiment 3 described later.
  • the carbon material thus produced is hereinafter referred to as the present invention material A.
  • ⁇ Comparative Example 1> A carbon material was produced in the same manner as in the above example except that the heat treatment was not performed. Thereby, since Cr 2 C does not convert to Cr 3 C 2 , the chromium carbide layer is substantially composed of Cr 2 C as shown in Experiment 4 described later. The carbon material thus produced is hereinafter referred to as a comparative material Z1.
  • Comparative Example 2 A carbon substrate was used as a carbon material (a chromium carbide layer was not formed on the surface of the carbon substrate). The carbon material thus produced is hereinafter referred to as comparative material Z2.
  • Table 1 shows the results of measuring the particle amounts of the inventive material A and the comparative materials Z1 and Z2 by the following method.
  • Measurement method of the amount of particles After each material is immersed in pure water and thoroughly washed (wash for 5 minutes or more), the washed specimen is subjected to ultrasonication in 3000 ml of pure water to extract particles, and the particle counter The number of particles was measured with a XP-L7W (Lion Corporation). Then, the number of particles per unit surface area (100 mm 2 ) of each material was determined.
  • the comparative material Z1 in which the chromium carbide layer is formed on the surface of the carbon substrate is compared with the comparative material Z2 in which the chromium carbide layer is not formed on the surface of the carbon substrate.
  • the amount of particles is decreasing, it is necessary to further reduce particles in order to use them in the field of semiconductor manufacturing.
  • material A in which the heat treatment is performed after forming the chromium carbide layer on the surface of the carbon base material the amount of particles is drastically compared not only with the comparative material Z2 but also with the comparative material Z1. It can be seen that it can be used sufficiently even in the field of semiconductor manufacturing.
  • the number of particles generated by this friction is preferably less than 500 per unit area (100 mm 2 ), and more preferably less than 100.
  • the material A of the present invention has a smaller proportion of chromium and a larger proportion of carbon than the comparative material Z1.
  • the material A of the present invention is considered to be a stable chromium carbide layer substantially equal to the composition of Cr 3 C 2 even when viewed from the ratio of carbon and chromium.
  • the comparative material Z1 since the ratio of chromium is large, unreacted chromium remains, and it is considered that the chromium carbide layer is unstable. It is considered that the particles generated thereby cannot be suppressed.
  • the chromium carbide layer mainly has an orthorhombic structure, whereby the chromium carbide layer is stabilized, and it is considered that the generation of particles is further suppressed.
  • crystals on the surface are developed, and it is considered that the effect of suppressing particles is high.
  • the chromium carbide layer on the surface of the comparative material Z1 has a crystal structure mainly composed of Cr 2 C.
  • FIG. 2 in the comparative material Z1, crystals on the surface are not developed, and the structure is not clear, which is considered to be unstable.
  • the chromium carbide layer before the heat treatment is made of Cr 2 C, but is not limited to this, and may be made of Cr 7 C 3 or Cr 23 C 6. Moreover, you may be comprised with these mixtures.
  • the chromium carbide layer before the heat treatment may contain Cr 3 C 2 . In this case, when the heat treatment, Cr 3 C 2 other than chromium carbide is converted to Cr 3 C 2, Cr 3 C 2 has intact is maintained.
  • the carbon material and the manufacturing method thereof of the present invention can be used as a member for a semiconductor manufacturing apparatus, a jig for manufacturing an electronic device (sensor, etc.), and a positioning jig for bonding other materials.

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PCT/JP2012/054042 2011-02-21 2012-02-21 炭素材料及びその製造方法 Ceased WO2012115072A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/983,788 US8896099B2 (en) 2011-02-21 2012-02-21 Carbon material and method of manufacturing the same
CN2012800059979A CN103328411A (zh) 2011-02-21 2012-02-21 碳材料及其制造方法
KR1020137024604A KR20140057477A (ko) 2011-02-21 2012-02-21 탄소 재료 및 그 제조 방법
EP12749856.6A EP2679565A1 (en) 2011-02-21 2012-02-21 Carbon material, and method for production thereof

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JP2011-034384 2011-02-21
JP2011034384A JP2012171823A (ja) 2011-02-21 2011-02-21 炭素材料及びその製造方法

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EP (1) EP2679565A1 (enExample)
JP (1) JP2012171823A (enExample)
KR (1) KR20140057477A (enExample)
CN (1) CN103328411A (enExample)
TW (1) TWI548612B (enExample)
WO (1) WO2012115072A1 (enExample)

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CN105272320A (zh) * 2015-12-04 2016-01-27 武汉科技大学 一种铁水包包壁用不烧Al2O3-Cr7C3砖及其制备方法

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