WO2012108306A1 - 異物検出装置及び異物検出方法 - Google Patents
異物検出装置及び異物検出方法 Download PDFInfo
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- WO2012108306A1 WO2012108306A1 PCT/JP2012/052206 JP2012052206W WO2012108306A1 WO 2012108306 A1 WO2012108306 A1 WO 2012108306A1 JP 2012052206 W JP2012052206 W JP 2012052206W WO 2012108306 A1 WO2012108306 A1 WO 2012108306A1
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- light
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- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
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- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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Definitions
- the present invention relates to a foreign matter detection device and a foreign matter detection method, and more particularly to a foreign matter detection device and a foreign matter detection method using far infrared rays or the like.
- a method of detecting scattered light using a dark field configuration is used as a means for highly sensitively detecting a small-size foreign matter adhering to the surface of a semiconductor wafer or a liquid crystal substrate.
- An electrode sheet which is one of LIB members, is obtained by coating an electrode mixture, which is a mixture containing an active material, a conductive additive, and a binder, on a metal foil as a current collector.
- an electrode mixture which is a mixture containing an active material, a conductive additive, and a binder
- the positive electrode material generally has LiCoO 2 or the like having a particle diameter of several ⁇ m to several tens of ⁇ m, which is the same as the film thickness, and the visible light transmittance is 0.1% or less. It is difficult to detect foreign matter in the film using visible light.
- Patent Document 1 terahertz light having a wavelength of 50 ⁇ m to 2 mm is irradiated on a paper sheet, terahertz reflected light reflected on the front and back surfaces of the paper sheet is detected, and the phase difference of the detected terahertz reflected light is detected.
- a paper sheet inspection method for detecting the thickness of a paper sheet by detecting the strength of interference is disclosed.
- Patent Document 2 introduces a method for measuring a terahertz time waveform in a single shot with the THz pulse and the probe pulse light being non-coaxial for the purpose of realizing a complete real-time measurement.
- An apparatus for real-time terahertz tomography and terahertz spectroscopic imaging in which a scanning mechanism is not required by irradiating a THz pulse with a line condensing state and using a two-dimensional imaging device as a detector is disclosed.
- the polarization axis of the polarizer is changed in accordance with the specific polarization axis of the object to be inspected, the light from the irradiation means is polarized and irradiated to the object to be inspected, and the analyzer has the polarization axis of the polarizer.
- a defect inspection apparatus that detects a defect in an inspection object by detecting a change in transmission amount or a change in reflection amount through light transmitted or reflected from the inspection object in accordance with the polarization axis by a light detection means. Has been.
- Patent Document 4 discloses a surface inspection apparatus that determines the surface shape of a metal by using a microwave having a wavelength of 10 ⁇ m to 1 mm and detecting a reflected wave from a surface to be measured.
- Patent Document 5 discloses an inspection method for examining the internal structure of an object formed by assembling powder particles by transmitting infrared light having a wavelength sufficiently longer than the diameter of the powder particles into the powder particles. Yes.
- Patent Document 6 an object to be inspected is irradiated with a pulsed or continuous sub-terahertz electromagnetic wave having a wavelength of 600 ⁇ m to 3 mm (0.5 THz to 100 GHz), and a difference in propagation time or transmittance due to the substance is utilized.
- An apparatus for inspecting foreign matter in a powder is disclosed.
- Non-Patent Document 1 describes the wavelength dependence of the refractive index and absorption coefficient of various metals and composite oxides.
- JP 2009-300279 A WO2006 / 085403 Japanese Patent Application No. 2007-502543
- An object of the present invention is to detect the surface of an object such as an electrode mixture film or a foreign substance contained in the object and improve the reliability of the object.
- the present invention detects a foreign object contained in a surface of an object or the object by irradiating the object with illumination light having a wavelength of 4 ⁇ m to 10 mm and detecting scattered light from the object as a signal. It is characterized by.
- the object is irradiated with illumination light having a wavelength of 4 ⁇ m to 10 mm, and the scattered light from the object is detected as a signal, so that the surface of the object or a foreign substance contained in the object is detected. And the reliability of the object can be improved.
- the present invention is a detection device and detection for detecting foreign substances (metals, etc.) mixed in a multi-particle structure (electrode mixture layer, etc.) formed of particles that transmit far infrared rays, etc., as an object. It is about the method.
- terahertz waves that pass through a complex oxide such as an active material are used as illumination light, and this terahertz wave is irradiated in a DF configuration to an electrode material film (electrode mixture layer) containing metal foreign objects as objects, metal foreign objects Scattered light (that is, light terahertz waves that have passed through the complex oxide hit the metal foreign matter and diffusely reflected) is generated.
- a foreign object can be detected by detecting the scattered light. That is, when terahertz waves belonging to far-infrared rays are used, the influence of scattering by the active material particles is reduced, the transmittance is also several tens of percent, and the scattered light from the metal foreign matter in the film can be detected. Become.
- the scattered light can be efficiently detected by disposing a scattered light detection optical system that captures the scattered light above the electrode material film.
- the foreign matter detection device is also called a foreign matter inspection device
- the foreign matter detection method is also called a foreign matter inspection method.
- the foreign object detection device is a foreign object detection device that detects a surface of a target object or a foreign object in the target object, and includes an illumination light generation unit that generates illumination light to irradiate the target object, and scattered light from the target object. And a scattered light detection unit that detects light as a signal using a light receiving element, and the wavelength of illumination light is 4 ⁇ m to 10 mm.
- the foreign matter contained in the surface of the object or the object includes not only the surface of the object or the foreign substance contained in the object but also the surface of the object and the object. Foreign materials shall be included.
- the scattered light includes light scattered in the process in which the illumination light passes through the object and light irregularly reflected by a foreign substance contained in the object.
- the foreign object detection device further includes a regular reflection light detection unit that detects regular reflection light from the object using a light receiving element.
- the specularly reflected light refers to light reflected at the same angle as the illumination light elevation angle, which is the angle at which the illumination light is incident on the object. However, light that falls within the range of the aperture angle of the optical system when detecting regular reflection light is included.
- the foreign object detection device further includes a smoothing processing unit that smoothes a signal obtained by the scattered light detection unit, and a filter processing unit that filters the smoothed signal smoothed by the smoothing processing unit. Including.
- the foreign object detection device further includes a clarification processing unit that performs differential processing on the noise removal signal obtained by the filter processing unit.
- the foreign object detection device further includes a heterodyne that processes a signal obtained by at least one of the scattered light detection unit and the regular reflection light detection unit, and a lock-in amplifier.
- the foreign object detection device further includes a synchronous detection unit that processes a signal obtained by at least one of the scattered light detection unit and the regular reflection light detection unit, and a lock-in amplifier.
- the foreign object detection device further includes a nonlinear crystal element that converts at least one of the scattered light and the regular reflection light, and at least one of the scattered light detection unit and the regular reflection light detection unit is Including infrared and visible light detectors.
- the illumination light generation unit includes a combination of a femtosecond pulse laser and a photoconductive antenna InGa electrostrictive element, a combination of a nanosecond pulse laser and a nonlinear crystal element, a terahertz wave Including a quantum cascade laser that generates terahertz waves, a Schottky barrier diode that generates terahertz waves, a Gunn diode, or a tannet diode.
- the wavelength of the terahertz wave is 4 ⁇ m to 10 mm.
- the foreign object detection device further includes a focal length adjustment unit that adjusts the focal lengths of the scattered light and the regular reflection light.
- At least one of the scattered light detection unit and the regular reflection light detection unit includes a one-dimensional sensor or a two-dimensional sensor in which a plurality of sensors are arranged.
- the foreign object detection device further calculates the thickness of the target object or the depth of the foreign object contained in the target object from the signal obtained by the specular reflection light detection unit, or analyzes or targets the foreign substance component.
- An analysis unit that detects moisture contained in the object is included.
- the foreign object detection method is a foreign object detection method for detecting a surface of an object or a foreign object in the object, the step of irradiating the object with illumination light, and detecting scattered light from the object as a signal.
- the wavelength of the illumination light is 4 ⁇ m to 10 mm.
- the foreign object detection method further includes a step of smoothing and filtering the scattered light signal.
- the foreign object detection method further includes a step of differentiating the filtered signal.
- the foreign object detection method further includes a step of detecting regular reflection light from the object.
- the foreign object detection method further includes a step of converting at least one wavelength of scattered light and regular reflection light.
- the foreign object detection method further includes a step of adjusting the focal lengths of the scattered light and the regular reflection light.
- the foreign object detection method further calculates the thickness of the object or the depth of the foreign object included in the object from the signal obtained by detecting the specularly reflected light, or analyzes the component of the foreign object, or A step of detecting moisture contained in the object.
- FIG. 1 shows an outline of a method for detecting a metallic foreign object buried in an electrode mixture layer of a lithium ion secondary battery (LIB).
- LIB lithium ion secondary battery
- Foreign objects such as metal particles (hereinafter also referred to as metal foreign objects) buried in the electrode mixture layer that is the object.
- a method of detecting scattered light from a metal foreign object is an effective means.
- illumination light electromagnetic wave
- the particle size of the active material used for the LIB electrode is about 1 to 30 ⁇ m.
- the particle size of the metal foreign object to be detected is in the range from 10 ⁇ m, which is about the same as that of the active material, to 80 ⁇ m, which is the thickness (film thickness) of a general mixture layer.
- a typical example is a case where the particle size of the active material is about 10 ⁇ m and the particle size of the metal foreign matter is about 30 ⁇ m.
- the particle size of the metal foreign object to be detected depends on the film thickness and the particle size of the active material, it is not limited to the above range. It may be in a range in which foreign matter such as mixed metal particles can be detected.
- the path of the illumination light irradiated to the object is classified into four. That is, [I] light that passes through the active material (electrode mixture layer) and reaches the metal foreign matter, [II] part of the illumination light that is reflected on the upper surface of the active material (electrode mixture layer) [III] light that is reflected and scattered by the surface of the metal foreign matter, and [IV] light that is transmitted through the active material (electrode mixture layer) and is regularly reflected by the current collector (metal plate) Light.
- scattered light from a metal foreign object can be generated using illumination light having a wavelength that passes through the active material under such conditions, the scattered light from the metal particles (metal foreign object) in the active material can be detected. Can do. When the scattered light from the metal particles enters the scattered light detector, a signal S is obtained.
- an unnecessary signal (noise N) is generated.
- the signal S decreases, and it becomes difficult to distinguish it from the reflected / scattered light signal (noise N) from the active material.
- the noise N that lowers the foreign matter detection sensitivity contained in the scattered light from the active material is reduced.
- a detection signal ratio that can be taken out from the scattered light detection unit when detecting metal particles, that is, a condition that determines the detection sensitivity using the S / N ratio.
- the light not reflected from the metal particles is further regularly reflected by the current collector after passing through the active material.
- a device is devised so that this regular reflection light is not normally detected.
- a scattered light detector is arranged so as not to detect this regular reflection light.
- an electromagnetic wave having a long wavelength since it generally has a property of increasing the transmittance of the substance, an electromagnetic wave having a wavelength several tens of times larger than the particle diameter becomes a condition for illumination light for scattering detection.
- an electromagnetic wave (having a wavelength of several hundreds ⁇ m) having a wavelength about 10 times the size (particle size) of the active material is included in a region from a far-infrared wavelength band to a wavelength band called a terahertz wave, and scattered light. It can be a candidate for illumination light when foreign matter is detected by the detection method.
- a terahertz wave refers to an electromagnetic wave having a frequency of about 1 THz (wavelength 300 ⁇ m), a frequency band of 0.1 THz to 10 THz (wavelength 30 ⁇ m to 3000 ⁇ m (3 mm)), or a frequency band of frequency 0.3 THz to 3 THz (wavelength 100 ⁇ m to 1000 ⁇ m (1 mm)).
- the particle size of the active material or foreign material is different from the above particle size, it can be estimated that the same phenomenon and effect can be achieved by changing the wavelength.
- far infrared light wavelength 4 ⁇ m to 100 ⁇ m
- millimeter waves wavelength 1 mm to 10 mm
- the term “terahertz wave” or “terahertz illumination light” includes the above-described far infrared light and millimeter wave regions. It is used as a term.
- FIG. 2A is a schematic diagram showing the principle of scattering of terahertz waves, and shows a case where terahertz waves are irradiated to the LIB electrode.
- an electrode 10 is obtained by applying an electrode mixture layer 700 containing an active material 701, a conductive additive and a binder as constituent elements on both sides of a current collector 710 (usually a metal foil). is there.
- a metal foreign substance 720 may be mixed.
- a detection optical unit 260 and a scattered light detector 200 configured by a condensing lens or the like are installed.
- the transmitted light 656 passing through the electrode mixture layer 700 and the upper surface of the electrode mixture layer 700 are reflected. Reflected light 654 is generated. A part of the transmitted light 656 is reflected by the metal foreign object 720 and becomes scattered light 660. Further, the transmitted light 658 that has not been irradiated onto the metal foreign object 720 is reflected by the current collector 710 and becomes specularly reflected light 670.
- the scattered light 660 is collected by the detection optical unit 260 and detected by the scattered light detector 200.
- a light source illumination light generator
- a combination of a femtosecond pulse laser and a photoconductive antenna InGa electrostrictive element, a nanosecond pulse laser and a nonlinear crystal are used.
- Examples include a combination of a conversion element (nonlinear crystal element), a quantum cascade laser (QCL) that generates terahertz waves, a Schottky barrier diode (SBD) that generates terahertz waves, a Gunn diode, and a tannet diode.
- QCL quantum cascade laser
- SBD Schottky barrier diode
- the scattered light signal detected by the scattered light detector 200 and converted into an electrical signal is sent to a signal conversion unit 507 that removes noise.
- the scattered light signal is usually detected as a potential difference.
- the signal conversion unit 507 receives the scattered light signal, and processes the noise N included in the scattered light signal, and the differential processing of the signal that has passed through the noise processing unit 505 and from which the noise N has been removed.
- a manifestation processing unit 506 is provided.
- the noise processing unit 505 is provided with a smoothing processing unit 502 that smoothes the scattered light signal, and a filter processing unit 504 that filters the signal smoothed by the smoothing processing unit 502.
- a set value (threshold value) obtained in advance by calculation or actual measurement is prepared, and a detection value lower than this set value among the signals sent from the smoothing processing unit 502 is determined as noise N. Therefore, it is regarded as 0 (zero), and the noise N is removed.
- the signal S that has passed through the signal converter 507 becomes an output 500.
- the revealing processing unit 506 it is preferable to provide the revealing processing unit 506 because the signal S is easily revealed, but it may not be provided.
- noise processing by the noise processing unit 505 will be briefly described.
- the noise generation factors can be broadly classified into two. One is externally generated noise as an unnecessary signal that jumps in from the outside of the apparatus. The other is internally generated noise as an unnecessary signal generated inside the device, for example, generated inside the circuit.
- a smoothing processing unit 502 is provided.
- the smoothing processing unit 502 can smooth the externally generated noise, and can exhibit an effect as an active noise countermeasure.
- An example of the smoothing processing unit 502 is a ferrite core.
- a filter processing unit 504 functions as a bandpass filter that limits the signal band based on the condition for detecting internally generated noise and the condition for limiting the sampling period, and can reduce noise in other bands. Can increase the effect.
- the light transmitted through the electrode mixture layer 700 is reflected by the surface of the current collector 710 to become regular reflection light 670.
- the electrode mixture layer 700 includes the metal foreign matter 720 (metal particle)
- part of the transmitted light of the terahertz illumination light 100 is reflected by the metal foreign matter 720 in the film and becomes scattered light 660 upward.
- the detection optical unit 260 arranged at the position is entered.
- the scattered light 660 is collected by a lens, a mirror, or the like in the detection optical unit 260 and introduced into the scattered light detector 200.
- FIG. 2B is a graph showing the distribution of scattered light of terahertz waves.
- the horizontal axis represents the pixel number, and the vertical axis represents the scattered light intensity.
- the output of the scattered light detector 200 has an intensity distribution spatially and has a peak at the center of the horizontal axis. That is, the peak of the scattered light intensity clearly indicates that the metal foreign object 720 has been detected, and thus is defined as a signal S. Scattered light in a region where the intensity of scattered light other than the peak is low is a factor that hinders detection of the signal S, and thus is called noise. In this figure, the maximum value of noise is shown as noise N.
- the metal foreign matter 720 having a smaller particle diameter can be detected easily and reliably when the S / N ratio is higher. That is, even if the particle size of the metal foreign object 720 is small and the signal S is low, the metal foreign object 720 can be determined if the noise N is low.
- the terahertz illumination light 100 that has not been reflected by the metal foreign object 720 is reflected by the current collector 710 to become specularly reflected light 670 and travels to a region other than the detection optical unit 260.
- specularly reflected light 670 is strong, it is preferable to separately provide an antireflection portion for preventing reflection so that the light does not become stray light when hitting a member such as a frame inside the apparatus.
- a transmission experiment was performed in which the active material 701 was irradiated with a terahertz wave having a wavelength of about 10 times the particle size of the active material 701, and the transmittance was measured.
- FIG. 3A is a schematic cross-sectional view showing a sample (sample) for measuring transmittance.
- An electrode mixture containing an active material 701 is applied to a part of the surface of a Si wafer (silicon wafer) that is a base material 730 that transmits the terahertz illumination light 100 (terahertz wave) to form an electrode mixture layer 700 having a thickness of 50 ⁇ m. Formed. Therefore, the base material 730 has a region where the electrode mixture layer 700 is formed and a region where the electrode mixture layer 700 is not formed.
- the transmittance of the terahertz illumination light 100 in the electrode mixture layer 700 was calculated by irradiating each region with the terahertz illumination light 100 and measuring the intensity of the transmitted light.
- FIG. 3B is a graph showing the measurement results of transmittance.
- the horizontal axis represents the wavelength of the terahertz illumination light 100 (terahertz wave) as a logarithmic axis, and the vertical axis represents the transmittance M / R.
- the transmittance is expressed as a percentage. Further, the wavelength shown on the horizontal axis decreases as it goes to the right.
- This figure shows that the transmittance decreases as the wavelength of the terahertz wave becomes shorter. For example, when the wavelength is 3 mm (0.1 THz), the transmittance is 60%, but when the wavelength is 100 ⁇ m (3 THz), the transmittance is reduced to several percent. Thus, it can be seen that the transmittance of the terahertz illumination light 100 in the electrode mixture layer 700 including the active material 701 can be increased by appropriately selecting the wavelength.
- FIG. 4A shows a state when the irradiated light is reflected or transmitted at the interface.
- the refractive index of the incident side medium and n i the incident angle in the case where the refractive index of the transmitted side medium was n t and phi i, the refraction angle and phi t, a reflection angle phi r .
- the scattering coefficient representing the intensity of scattered light due to the Rayleigh scattering phenomenon can be calculated by the following calculation formula (1).
- n is the number of particles
- d is a particle diameter
- ⁇ is a wavelength
- the reflection coefficient m can be calculated using the following formulas (2) to (4).
- the calculation formula (3) is for calculating the reflection coefficient m s of S-polarized light
- the calculation formula (4) is for calculating the reflection coefficient m p of P-polarized light.
- Non-Patent Document 1 when the wavelength of the irradiated light is 150 ⁇ m, the refractive index of aluminum is 358 and the absorption coefficient is 425. Regarding the refractive index and absorption coefficient of other metals such as copper, iron, and SUS steel, which are other metal foreign matters that need to be detected, NPL 1 does not describe sufficient data in the terahertz region. As a result of extrapolating the data of Patent Document 1, it was found that it was about the same as aluminum (about three digits).
- the electrode mixture includes an active material that is a compound such as LiCoO 2 , a conductive aid that is a fine particle of a carbonaceous material, a binder that is a resin such as polyvinylidene fluoride (PVDF), styrene-butadiene rubber (SBR), and the like.
- PVDF polyvinylidene fluoride
- SBR styrene-butadiene rubber
- FIG. 4B shows setting conditions for simulating the intensity of scattered light.
- the terahertz illumination light 100 is irradiated to the substrate 310 at a predetermined illumination light elevation angle ⁇ and scattered.
- the scattered light is collected by a detection optical unit 260 having an aperture angle 2 ⁇ and converted into an electric signal by the scattered light detector 200.
- the scattered light detector 200 is arranged in a direction perpendicular to the substrate 310, and calculates the sum of the amounts of light entering the predetermined opening angle 2 ⁇ to obtain the scattered light intensity.
- the substrate 310 is made of aluminum, and one foreign particle 300 (aluminum particle) is placed on the substrate 310.
- FIG. 4C shows an example of the result of the simulation based on the setting conditions of FIG. 4B.
- the horizontal axis is the particle size of the foreign particle 300, and the vertical axis is the logarithmic axis with the scattered light intensity.
- the wavelength ⁇ of the terahertz illumination light 100 is 150 ⁇ m and 500 ⁇ m.
- the scattered light intensity (indicated by A in the figure) is 10 of the incident light quantity. -4 times.
- the scattered light intensity (indicated by B in the figure) is about 10 ⁇ 7 times the incident light amount. That is, the difference in signal intensity (scattered light intensity) obtained by the scattered light detector 200 is different by about 1000 times. Therefore, it can be seen that when the wavelength ⁇ is 500 ⁇ m, it is difficult to detect the foreign particles 300 with a weak signal, and when the wavelength ⁇ is 150 ⁇ m, it is easy to detect the foreign particles 300.
- FIG. 5 shows the result of simulation of the change in scattered light intensity due to the difference in material and particle size.
- the particle diameter is taken on the horizontal axis, and the scattered light intensity is taken on the vertical axis to make the logarithmic axis.
- the refractive index was set to 358 and the absorption coefficient was set to 425 based on Non-Patent Document 1, as in FIG. 4C.
- the active material physical property values were assumed assuming LiCoO 2 and the like. That is, with reference to data such as LiNbO 3 described in Non-Patent Document 1, it was assumed that the refractive index was 1.6 and the absorption coefficient was 0.
- the scattered light intensity (indicated by A in the figure) is about 10 ⁇ 4 times the amount of incident light.
- terahertz waves close to a wavelength of 100 ⁇ m (3 THz) are advantageous as illumination light used for detecting scattered light, and a wavelength in the range of 30 to 200 ⁇ m is preferable.
- the wavelength is 500 ⁇ m, there is a high possibility that it is difficult to detect scattered light. For this reason, wavelengths in the range of 30 ⁇ m or more and less than 500 ⁇ m are suitable.
- the wavelength of the terahertz wave is preferably in the range of 30 ⁇ m or more and less than 500 ⁇ m, and more preferably in the range of 30 to 200 ⁇ m, in the case of active materials and metal foreign substances that meet the above conditions such as particle size.
- the desirable range of the wavelength varies depending on the thickness of the electrode mixture layer, such as the type of active material to be processed, the particle diameter, and the like.
- FIG. 6A shows a schematic configuration of the optical system of the foreign object detection device.
- the foreign object detection apparatus shown in this figure uses far infrared rays (terahertz illumination light 100) because of the requirement to efficiently detect scattered light 660.
- the foreign object detection apparatus has an illumination light aperture 130, a scattered light detector 200, and a regular reflection light detector 210 as main components.
- the terahertz illumination light 100 is applied to an object (work) such as an electrode sheet that flows in the work movement direction 520 to form a line-shaped bright portion 140.
- the terahertz illumination light 100 is applied to the object from the direction of the illumination light azimuth ⁇ and the illumination light elevation angle ⁇ . Further, the terahertz illumination light 100 is irradiated at an illumination light aperture angle ⁇ .
- the object may include a metal foreign object 720.
- Most of the terahertz illumination light 100 irradiated on the object becomes specularly reflected light 670 and travels to the specularly reflected light detector 210.
- a part of the scattered light 660 (including the reflected light 654 shown in FIG. 2A) from the object passes through the scattered light detection opening 220 and travels toward the scattered light detector 200.
- Part of the reflected light from the metal foreign object 720 also enters the scattered light detector 200.
- the terahertz illumination light 100 passes through the active material and becomes the metallic foreign matter 720.
- the scattered light 660 that reaches and is reflected from the metal foreign object 720 can also pass through the active material and be detected by the scattered light detector 200. In this case, it is desirable to install the scattered light detector 200 at a position where the scattered light 660 from the metal foreign object 720 can be captured with the highest sensitivity.
- the scattered light 660 from the metallic foreign material 720 is generated and the reflected light 654 (see FIG. 2A. The same shall apply hereinafter).
- the reflected light 654 from the active material is preferably reduced for the purpose of detecting the scattered light 660 from the metal foreign object 720 with high sensitivity.
- the arrangement of the detection optical system of the scattered light 660 is such that the signal of the metal foreign object 720 is the highest and the noise due to the scattered light 660 from the active material is the lowest, and the elevation angle ⁇ and azimuth of the terahertz illumination light 100 ⁇ , the opening angle ⁇ of the illumination light opening 130, and the arrangement of the scattered light detection opening 220 and the scattered light detector 200 are determined.
- These arrangements may be experimentally determined as optimal values, or when the shape and physical property values (for example, refractive index and absorption coefficient) of the object generating the scattered light 660 and the metal foreign object 720 are known.
- the optimum values such as the elevation angle ⁇ and the azimuth angle ⁇ of the terahertz illumination light 100 in which the scattered light 660 becomes strong may be grasped using a simulation of the scattering phenomenon.
- the scattered light 660 and the metal foreign object 720 have different angles of scattered light
- the scattered light 660 is shielded by the opening of the detection optical unit, and a diaphragm is installed at a position where the scattered light from the metal foreign object 720 passes.
- the detection optical unit is a Fourier transform lens
- a detection optical unit that allows the scattered light from the metal foreign object 720 to pass through a diaphragm that selectively blocks the scattered light 660 on the Fourier transform surface is manufactured. Is also possible.
- FIG. 6B is a graph showing the distribution of scattered light 660 detected by the scattered light detector 200.
- This figure shows the distribution of the brightness (incident light intensity) of the scattered light 660 two-dimensionally incident on the sensor of the scattered light detector 200 in three-dimensional coordinates.
- the scattered light detector 200 is not a single sensor, but is a two-dimensionally arranged sensor (referred to as a two-dimensional sensor) or a one-dimensionally arranged sensor (referred to as a one-dimensional sensor). ) Is desirable.
- the terahertz illumination light 100 is irradiated on the surface of the target object in a wide area, and is irradiated on the surface of the target object as the line-shaped bright portion 140 so as to be conjugate with the two-dimensional sensor or the one-dimensional sensor.
- the illumination optical system including the illumination light aperture 130 is arranged so as to form a line-shaped bright portion 140 in parallel with the direction in which the one-dimensional sensors are arranged.
- an illumination optical system that forms a wide bright portion in a planar shape is desirable.
- the illumination optical system forms a desired shape using a member including a condensing lens, a reflection mirror, and the like, and forms a bright portion with a uniform illumination intensity so as to reduce a light amount difference between the central portion and the peripheral portion.
- the size of the inspection area and the size of the terahertz illumination light 100 are determined in consideration of the required detection pixel size, the number of pixels of the scattered light detector 200, resolution, cost effectiveness, and the like. If a wider range of inspections need to be performed simultaneously, a plurality of inspection optical systems including the illumination light aperture 130, the scattered light detector 200, the specular reflection light detector 210, etc. are preferably arranged in parallel. It is good to install in.
- the scattered light detector 200 is required to efficiently detect the scattered light 660 of the metallic foreign matter 720 (metal particles) included in the object.
- the sensor side and the object side of the scattered light detector 200 have a so-called focused relationship.
- Autofocus is a function that automatically adjusts the focal length, and is performed by the focal length adjuster.
- FIG. 6C is a graph showing the distribution of the regular reflection light 670 detected by the regular reflection light detector 210.
- This figure shows the distribution of the brightness (incident light intensity) of the specularly reflected light 670 that is incident two-dimensionally on the sensor of the specularly reflected light detector 210 in three-dimensional coordinates.
- the specularly reflected light detector 210 having a two-dimensional sensor or a one-dimensional sensor (also simply referred to as a sensor) at a position conjugate with the object point in the optical path of the specularly reflected light 670 is used. Deploy. When the position where the terahertz illumination light 100 is reflected, that is, the position where the specularly reflected light 670 is generated (corresponding to the position of the object point in the detection of the scattered light 660) moves up and down. Accordingly, the distribution of the regular reflection light 670 in the sensor varies. This means that the distribution of the regular reflection light 670 in the sensor corresponds to the position of the terahertz illumination light 100. The distribution of the regular reflection light 670 detected by this sensor is fed back to control the position of the object point. Thereby, an autofocus function can be realized.
- FIG. 7 shows a circuit configuration for improving the sensitivity of the foreign substance inspection apparatus.
- This figure shows a circuit configuration in which the signals detected by the scattered light detector 200 and the specular reflection light detector 210 are processed by the heterodyne 400 and the lock-in amplifier 410.
- Each of the heterodyne 400 and the lock-in amplifier 410 includes a local oscillator 420 (Local Oscillator), an attenuator 430 (ATT), and an integration circuit 435.
- the terahertz illumination light 100 is irradiated from the light source 80 and irradiated through the illumination optical system 90 to form a line-shaped bright portion 140.
- the metal foreign object 720 When the amount of scattered light 660 from the metal foreign object 720 decreases and the signal voltage value decreases, and when the voltage value of noise caused by the scattered light 660 from the active material or noise generated from the detection circuit approaches, the metal foreign object is stable. Cannot be detected. Therefore, a separate noise reduction measure is required. As means for reducing noise, a heterodyne detection method and a lock-in detection method are desirable.
- the amount of scattered light 660 is reduced as the size of the metal foreign object 720 is reduced.
- noise is also amplified, which causes erroneous detection. Therefore, in order to reduce amplifier noise during amplification, a signal having the same frequency as the scattered light signal detected by the scattered light detector 200 is supplied to the integrating circuit 435 by the local oscillator 420 and the attenuator 430. As a result, the frequency of the detection signal is converted (reduced) to the MHz band, and signal amplification is performed in the amplifier reduction noise region.
- the heterodyne 400 is used as means for converting the frequency of the detection signal.
- the detection signal when a signal having a frequency in the THz band + MHz band is input as a reference signal in the detector with respect to the detection signal in the terahertz region, the detection signal can be converted into the MHz band having a difference frequency of the detection signal.
- Noise can be removed with a band-pass filter 440 (BPF) in the MHz band, and a low-noise amplifier 450 can be inserted in the subsequent stage to obtain an output in the MHz band with reduced noise.
- BPF band-pass filter 440
- the measurement light, the reference light, and the interference light are represented by the following calculation formulas (5), (6), and (7), respectively.
- ⁇ 1 is the frequency of the terahertz illumination light 100 (measurement illumination light)
- ⁇ 2 is the frequency integrated in the heterodyne 400
- ⁇ 1 - ⁇ 2 is the frequency of MHz output from the heterodyne. It is a target value.
- frequency omega 2 is selected to omega 1 - [omega] 2 is several MHz.
- a lock-in detection method as a means for revealing and taking out a foreign substance detection signal whose noise has been reduced by the heterodyne 400.
- a signal having a frequency in the same MHz band as the signal detected by the heterodyne 400 is supplied from the local oscillator 420 to the integrating circuit 435 via the attenuator 430.
- the signal change in this case is expressed by the following calculation formula (8) as a formula of the intensity of the synthesized wave.
- the 2 ⁇ component is blocked by passing through a low-pass filter 460 (LPF) arranged at the subsequent stage.
- LPF low-pass filter 460
- the signal obtained as an output by this signal processing is the scattered light signal 500 of the metallic foreign object 720, which is A / 2 as shown in the calculation formula (8).
- a synchronous detection unit and a lock-in amplifier are provided, and a method using the synchronous detection and the lock-in amplifier by using these also has the same noise reduction effect. Can be issued.
- This method is a proven method for transmission and reception of general AM radio. Specifically, a modulation frequency is added to the transmission side, modulated and transmitted toward the space, and the reception side can receive by selecting only the same frequency as the transmission side. is there. By selecting the frequency on the receiving side, noise can be removed, and thereafter only the foreign substance signal can be detected with high sensitivity from the lock-in amplifier.
- the present invention can be applied to foreign object detection in dielectric materials such as ceramics and resin members, which are multi-particle structures formed by solidifying particles.
- FIG. 8A shows a configuration in which an optical system is devised and detection is performed in the near-infrared or visible light region, and the detection is accelerated to be applicable to a mass production line of an object such as an electrode sheet. .
- This figure shows an example in which the specularly reflected light 670 is detected by a two-dimensional planar photoelectric conversion element (light receiving sensor) or a one-dimensional photoelectric conversion element (line sensor).
- the planar photoelectric conversion element is a kind of two-dimensional sensor
- the one-dimensional photoelectric conversion element is a kind of one-dimensional sensor.
- a detection method that converts it into visible light using a non-linear crystal element (EO crystal element 600) for photoelectric conversion. is there.
- the wavelength region of sensing can be shortened.
- the region can be from visible light to infrared light.
- the EO crystal element 600 uses the Pockels effect.
- the Pockels effect is a phenomenon in which when an electric field E is applied to a crystal element, the refractive index in a certain crystal direction varies due to the electric field E.
- the terahertz illumination light 100 (terahertz wave) is applied to the electrode mixture layer 700 including the metal foreign matter 720, and regular reflection light 670 is generated.
- a part of a nanosecond pulse laser (wavelength is an infrared light or visible light region) before the terahertz illumination light 100 (terahertz wave) is generated by a nonlinear crystal is branched into a probe light 620, which is positive.
- the optical path length when passing through the EO crystal element 600 varies.
- the phase of the probe light 620 that has passed changes. Due to this phase change, the polarization direction of the incident probe light 620 changes.
- the variation in the amount of light passing through the quantum infrared / visible light detector 650 By detecting the variation in the amount of light passing through the quantum infrared / visible light detector 650, the variation in the amount of light of the terahertz wave is detected. That is, the variation in the reflection position of the terahertz illumination light 100, the film thickness, and the like can be detected at high speed.
- the point of using the principle of the Pockels effect is the same as that in the case where the EO crystal element 600 is used in the specular reflection light detection optical system.
- scattered light 660 when scattered light 660 is generated, pump light enters the EO crystal element 600. Due to the scattered light 660, the refractive index of the EO crystal element 600 varies.
- the probe light 630 used in the scattered light detection optical system branches a nanosecond pulse laser (wavelength is an infrared light or visible light region) before the terahertz illumination light 100 is generated by a nonlinear crystal. The light is converted by passing through the polarizing plate 610.
- the phase of the probe light 630 that has passed changes.
- the polarization direction of the incident probe light 630 changes.
- a polarizing plate 610 is disposed on the entrance side of the EO crystal element, and an analyzer plate 640 is disposed on the exit side so as to be at an appropriate angle with respect to the polarization angle of the probe light 630.
- the scattered light 660 of the metal foreign object 720 can be detected at high speed and with high sensitivity.
- the method shown in this figure is a method for extracting the Pockels effect of the EO crystal element 600 due to the terahertz wave by the phase change of the passing laser beam.
- the change in the phase of the laser beam also occurs due to the reflection of the EO crystal element 600.
- a laser beam is irradiated from the sensor side, and the reflected light from the EO crystal element 600 is detected by the sensor as a change in the amount of light at the polarizing plate 610 in the same manner as the transmitted light.
- terahertz waves can be detected.
- FIG. 8B is an explanatory diagram showing the relationship between the intensity of specularly reflected light, the film thickness, and the depth of foreign matter.
- FIG. 8C is a schematic diagram illustrating a method for calculating the film thickness from the distribution of the intensity of regular reflected light.
- the regular reflection light 670 from the electrode mixture layer 700 is reflected from the upper surface of the electrode mixture layer 700 (upper surface reflection light 530 in FIG. 8C) and from the lower surface of the electrode mixture layer 700.
- regular reflection light lower surface reflection light 540 in FIG. 8C.
- the infrared / visible light detector 650 can recognize the upper surface and the lower surface of the electrode mixture layer 700 as position information. Furthermore, the film thickness (thickness) of the electrode mixture layer 700 can be detected by detecting the distance between the upper surface and the lower surface.
- the thickness of the electrode mixture layer 700 affects the performance of the battery.
- the thickness of the electrode mixture layer 700 is measured using other means and is used as a management item in the production process.
- a reflection signal from the metal foreign matter 720 is included in the film thickness information (foreign matter reflection light 535 in FIG. 8C). Can be detected.
- the depth information in which the metal foreign object 720 is buried can be detected at the same time.
- FIG. 9A is a schematic configuration diagram showing a foreign matter inspection apparatus having a moisture analysis function and a foreign matter component analysis function.
- FIG. 9B is a graph showing the frequency distribution of illumination light.
- FIG. 9C is a graph showing a moisture spectrum.
- FIG. 9D is a graph showing a spectrum of foreign matter.
- terahertz waves are light (electromagnetic waves) having a wavelength of several tens to several hundreds of ⁇ m, they cause vibration and absorption phenomena at the molecular level in the irradiated material.
- a femtosecond pulse laser 170 is converted into terahertz illumination light 100 by a photoconductive antenna element 180 (photoconductive antenna InGa electrostrictive element), and is irradiated onto an object.
- a part of the femtosecond pulse laser 170 is branched and used as the probe light 630 via the reflector 345 and the like.
- the reflecting plate 345 is movable in the reflecting plate moving direction 350, whereby the path length of the probe light 630 can be adjusted.
- the probe light 630 is applied to the photoconductive antenna element 180 that detects the scattered light 660 and the specularly reflected light 670.
- the probe light 630 is incident from the back side of the surface of the photoconductive antenna element 180 on which the scattered light 660 and the specularly reflected light 670 are incident.
- a signal output 470 is obtained from the photoconductive antenna element 180 that detects the scattered light 660 and the specularly reflected light 670.
- the femtosecond pulse laser 170 has a broad frequency distribution.
- the autofocus function and the analysis of moisture contained in the LIB can be realized at the same time. Furthermore, the component of the foreign substance detected from the scattered light can be analyzed in the same manner.
- Water analysis is performed using the signal output 470 obtained from the photoconductive antenna element 180 which is a specular reflection light detector.
- a femtosecond pulse laser 170 is used as a light source, and a broadband terahertz wave is generated using a photoconductive antenna element 180.
- a broadband terahertz wave is generated using a photoconductive antenna element 180.
- FIG. 9C schematically shows a moisture fingerprint spectrum measured with a terahertz wave.
- the fingerprint spectrum of moisture is obtained by converting the brightness phase and amplitude of specular reflection light.
- LIB When LIB operates as a battery and water is contained in its active material, the movement of Li ions is inhibited. For this reason, in a normal production line, a dry room is used to prevent adhesion of moisture, and the active material is focused on drying.
- One function of the foreign substance inspection apparatus is to perform a moisture content inspection at the same time as the foreign substance inspection, which leads to a significant increase in function as the inspection apparatus.
- the spectrum of the component of the foreign material contained in the electrode mixture layer and the electrode mixture layer is detected from the component of the scattered light.
- the spectral component of the foreign substance in the film can be analyzed by analyzing the wavelength of the scattered light. This utilizes a phenomenon in which a change appears in the reflection spectrum of scattered light from vibration at the molecular level.
- the spectrum of a foreign material is obtained by converting the brightness phase and amplitude of scattered light from the foreign material. In the case of managing the process, if the component of the foreign matter is known, the cause of occurrence can be grasped, and the foreign matter can be quickly reduced, so that the effect is great.
- a femtosecond pulse laser 170 is used.
- terahertz wave energy is desirable.
- the detection of scattered light can be realized by using the femtosecond pulse laser 170 as a light source and converting the femtosecond pulse laser 170 to obtain the terahertz illumination light 100. Analysis and scattered light detection can be realized simultaneously.
- FIG. 10A is a schematic diagram showing a configuration in the case where scattered light is detected by a one-dimensional sensor.
- FIG. 10B is a schematic diagram illustrating a configuration in a case where scattered light is detected by a two-dimensional sensor.
- the one-dimensional sensor is a plurality of sensors arranged in one column
- the two-dimensional sensor is a plurality of sensors arranged in a plurality of columns.
- the terahertz illumination light 100 is irradiated onto the workpiece moving in the workpiece movement direction 520 to form a line illumination 140, and scattered light therefrom is detected by the one-dimensional sensor 1010 via the detection optical unit 260.
- the one-dimensional sensor 1010 is desirably arranged in a direction orthogonal to the workpiece movement direction 520.
- the terahertz illumination light 100 is irradiated onto a workpiece moving in the workpiece movement direction 520 to form a planar illumination 1030, and scattered light from this is detected by the two-dimensional sensor 1020 via the detection optical unit 260.
- One-dimensional sensors are generally inexpensive. In addition, since it takes only a short time to read the detected signal, image measurement can be performed at a high speed. Furthermore, a wide object can be inspected at a high speed by using a pixel having thousands of pixels in one column.
- the one-dimensional sensor preferably moves the workpiece when inspecting a planar member.
- ⁇ Two-dimensional sensors can obtain a wide area of information by collecting data once. Further, it is possible to easily reveal the defect from the wide area information.
- the two-dimensional sensor preferably uses illumination light that irradiates a wide area in order to maximize its data collection function.
- a two-dimensional sensor has more image information than a one-dimensional sensor, it is desirable to include a buffer memory and a calculation unit having a parallel processing function in order to perform image measurement at a high speed.
- the calculation unit is also desirable for smooth movement of the workpiece.
- FIG. 11 is a block diagram showing an example of the circuit configuration of the foreign substance inspection apparatus.
- illumination light is irradiated toward an object from an illumination light irradiation unit 1101 including an illumination light generation unit 1102 and an illumination optical system 1103.
- Scattered light from the object is received by the scattered light detection unit 1105 via the scattered light detection optical system 1104.
- the regular reflection light from the object is received by the regular reflection light detection unit 1107 via the regular reflection light detection optical system 1106. The operation of these is controlled by the control unit 1110.
- the signals obtained by the scattered light detection unit 1105 and the specular reflection light detection unit 1107 are sent to the smoothing processing unit 502 of the signal conversion unit 507, and are sent to the control unit 1110 via the filter processing unit 504 and the revealing processing unit 506. Sent.
- the smoothing processing unit 502 and the filter processing unit 504 constitute a noise processing unit 505.
- the scattered light detection unit 1105 and the specular reflection light detection unit 1107 are provided with a two-dimensional sensor or the like and the signal becomes enormous and difficult to process in real time, the scattered light detection unit 1105 and the specular reflection light detection
- the signal obtained by the unit 1107 is sent to the calculation unit 1120 and is sent to the control unit 1110 via the buffer memory 1121 and the parallel processing unit 1122. Thereby, the overflow of the signal in the control part 1110 can be prevented.
- the signals obtained by the scattered light detection unit 1105 and the specular reflection light detection unit 1107 are sent to the analysis unit 1130, and the presence / absence of moisture, the type of foreign matter, and the like can be analyzed.
- the terahertz wave illumination light is expanded to an area corresponding to the size of the sensor and obliquely irradiated, and the detection optical system is arranged vertically above the object such as a battery sheet, thereby maintaining the focus, and At the same time, inspection and analysis of a large area of foreign matter can be performed.
- the range that can be inspected at the same time can be expanded. Further, by arranging the detection optical units corresponding to the width dimension of the electrode sheet, the entire surface can be inspected in one pass.
- the material of the substance can be analyzed by measuring the spectral distribution of reflected light or scattered light from the substance.
- the electrode material contains moisture, so that the advantage of enabling analysis of the moisture content is great.
- the reflected position can be detected by converting the regular reflected light into visible light using an EO element and detecting the position of the regular reflected light using a visible light sensor, and an autofocus function can be provided using this data. .
Abstract
Description
)の検出を高感度に行なうという目的のためには、金属異物からの散乱光を検出する方式が有効な手段である。この方式においては、条件として、電極合剤層に含まれる活物質を透過する照明光(電磁波)が必要である。
)を有することが望ましい。
この場合の条件としては、散乱光検出器200のセンサ側と対象物側とがいわゆるフォーカスの合っている関係であることが必要となる。この状態を作り出すためには、対象物側を常にフォーカスが合っている一定の状態で検査をする必要がある。そのためには、オートフォーカスの機能を実現することが望ましい。オートフォーカスは、焦点距離を自動的に調節する機能であり、焦点距離調節部によってなされる。
たとえば、テラヘルツ領域の検出信号に対して、検出器における参照信号としてTHz帯+MHz帯の周波数の信号を入れると、検出信号の差周波数のMHz帯に変換することができる。
このとき、プローブ光630としてレーザ光を照射すると、EO結晶素子600を通過する際の光路長が変動する。ここで、散乱光検出光学系に用いるプローブ光630は、テラヘルツ照明光100を非線形結晶で発生させる前のナノ秒パルスレーザ(波長は赤外光または可視光の領域である。)を分岐し、偏光板610を通過させて変換したものである。
異物のスペクトルは、異物からの散乱光の明るさの位相及び振幅を変換して得られる。工程の管理をする場合には、異物の成分が判ると、発生要因をつかむことができ、異物の低減を迅速に行なうことができるため、効果が大きい。
Claims (18)
- 対象物の表面若しくは該対象物の中の異物を検出する異物検出装置であって、前記対象物に照射する照明光を発生する照明光発生部と、前記対象物からの散乱光を受光素子を用いて信号として検出する散乱光検出部とを含み、前記照明光の波長は、4μm~10mmであることを特徴とする異物検出装置。
- さらに、前記対象物からの正反射光を受光素子を用いて検出する正反射光検出部を含むことを特徴とする請求項1記載の異物検出装置。
- さらに、前記散乱光検出部で得られた前記信号を平滑化する平滑化処理部と、この平滑化処理部で平滑化された平滑化信号をフィルタリングするフィルタ処理部とを含むことを特徴とする請求項1又は2に記載の異物検出装置。
- さらに、前記フィルタ処理部で得られたノイズ除去信号を微分処理する顕在化処理部を含むことを特徴とする請求項3記載の異物検出装置。
- さらに、前記散乱光検出部及び前記正反射光検出部のうち少なくともいずれかで得られた信号を処理するヘテロダインと、ロックインアンプとを含むことを特徴とする請求項2~4のいずれか一項に記載の異物検出装置。
- さらに、前記散乱光検出部及び前記正反射光検出部のうち少なくともいずれかで得られた信号を処理する同期検波部と、ロックインアンプとを含むことを特徴とする請求項2~4のいずれか一項に記載の異物検出装置。
- さらに、前記散乱光及び前記正反射光のうち少なくともいずれかの波長を変換する非線形結晶素子を含み、前記散乱光検出部及び前記正反射光検出部のうち少なくともいずれかは、赤外・可視光検出器を含むことを特徴とする請求項2~6のいずれか一項に記載の異物検出装置。
- 前記照明光発生部は、フェムト秒パルスレーザと光伝導アンテナInGa電歪素子とを組み合わせたもの、ナノ秒パルスレーザと非線形結晶素子とを組み合わせたもの、テラヘルツ波を発生する量子カスケードレーザ、テラヘルツ波を発生するショットキーバリアダイオード、ガンダイオード又はタンネットダイオードを含むことを特徴とする請求項1~7のいずれか一項に記載の異物検出装置。
- さらに、前記散乱光及び前記正反射光の焦点距離を調節する焦点距離調節部を含むことを特徴とする請求項2~8のいずれか一項に記載の異物検出装置。
- 前記散乱光検出部及び前記正反射光検出部のうち少なくともいずれかは、複数個のセンサを配列した1次元センサ又は2次元センサを含むことを特徴とする請求項2~9のいずれか一項に記載の異物検出装置。
- さらに、前記正反射光検出部で得られた信号から、前記対象物の厚さ若しくは前記対象物に含まれる異物の深さの算出、又は前記異物の成分の分析若しくは前記対象物に含まれる水分の検出を行う分析部を含むことを特徴とする請求項2~10のいずれか一項に記載の異物検出装置。
- 対象物の表面若しくは該対象物の中の異物を検出する異物検出方法であって、前記対象物に照明光を照射する工程と、前記対象物からの散乱光を信号として検出する工程とを含み、前記照明光の波長は、4μm~10mmであることを特徴とする異物検出方法。
- さらに、前記散乱光の信号を平滑化し、フィルタリングする工程を含むことを特徴とする請求項12記載の異物検出方法。
- さらに、フィルタリングした前記信号を微分処理する工程を含むことを特徴とする請求項13記載の異物検出方法。
- さらに、前記対象物からの正反射光を検出する工程を含むことを特徴とする請求項12~14のいずれか一項に記載の異物検出方法。
- さらに、前記散乱光及び前記正反射光のうち少なくともいずれかの波長を変換する工程を含むことを特徴とする請求項15記載の異物検出方法。
- さらに、前記散乱光及び前記正反射光の焦点距離を調節する工程を含むことを特徴とする請求項15又は16に記載の異物検出方法。
- さらに、前記正反射光を検出して得られた信号から、前記対象物の厚さ若しくは前記対象物に含まれる異物の深さの算出、又は前記異物の成分の分析若しくは前記対象物に含まれる水分の検出を行う工程を含むことを特徴とする請求項15~17のいずれか一項に記載の異物検出方法。
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JP5615941B2 (ja) | 2014-10-29 |
KR20130114242A (ko) | 2013-10-16 |
CN103348235A (zh) | 2013-10-09 |
US20130320216A1 (en) | 2013-12-05 |
KR101545419B1 (ko) | 2015-08-18 |
JPWO2012108306A1 (ja) | 2014-07-03 |
CN103348235B (zh) | 2015-06-03 |
US9164042B2 (en) | 2015-10-20 |
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