WO2012105705A1 - 光学フィルタリングデバイス、並びに欠陥検査方法及びその装置 - Google Patents
光学フィルタリングデバイス、並びに欠陥検査方法及びその装置 Download PDFInfo
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- WO2012105705A1 WO2012105705A1 PCT/JP2012/052555 JP2012052555W WO2012105705A1 WO 2012105705 A1 WO2012105705 A1 WO 2012105705A1 JP 2012052555 W JP2012052555 W JP 2012052555W WO 2012105705 A1 WO2012105705 A1 WO 2012105705A1
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- shutter
- pattern
- filtering device
- optical filtering
- light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
Definitions
- the present invention relates to an optical filtering device that blocks the light in a desired region of incident light and transmits the remaining light, and compares the optical image of the object to be inspected with a reference image using the optical filtering device.
- the present invention relates to a method and apparatus for detecting fine pattern defects and foreign matters from the difference, and more particularly to a defect inspection method and apparatus for inspecting the appearance of semiconductor wafers, photomasks, liquid crystals and the like.
- a substrate (wafer) on which semiconductor devices are formed is processed in a manufacturing process of several hundreds to produce a product.
- foreign matter adheres to the substrate (wafer) or pattern defects occur due to variations in the pattern formation process.
- DOE objects of interest
- detection heads In order to meet such needs, in recent years, a plurality of detection optical systems and image processing systems (hereinafter referred to as detection heads) are provided, and the increase in defect types and defects that can be detected by using detection signals in each detection optical system. Defect inspection devices with improved detection performance have been developed, manufactured and sold, and are being applied to semiconductor manufacturing lines.
- a semiconductor device defect inspection apparatus detects, for example, pattern defects and foreign matters generated in processes such as a lithographic process, a film forming process, and an etch process by inspecting a substrate surface after the process is completed. This command is used to promptly detect the occurrence of defective products by issuing a cleaning execution command for the apparatus or by flowing a substrate in which a fatal defect has already occurred in the subsequent process.
- the substrate in the process of forming the semiconductor device that has been subjected to the predetermined processing in the previous process is loaded into the inspection apparatus.
- An image of the surface of the substrate (wafer) in the process of forming the semiconductor device is taken and acquired, and based on the image, Japanese Patent Application Laid-Open No. 2003-83907 (Patent Document 1) and Japanese Patent Application Laid-Open No. 2003-98113 (Patent Document 2).
- Defect determination is performed by performing defect signal determination threshold defect determination processing as described in Japanese Patent Application Laid-Open No. 2003-271927 (Patent Document 3), and the number of defects on the substrate is output.
- the detected defect number Nt is smaller than the preset defect number threshold value Nc, it is sent to the next process as it is. If the number of defects Nt is large, whether or not the substrate can be regenerated is determined after issuing a cleaning execution command for the pre-process apparatus. If it is determined that the substrate can be regenerated, the substrate is cleaned in the cleaning process and then sent again to the next process through the inspection process.
- a substrate (wafer) in the process of forming a semiconductor device to be inspected has portions 1 and 1 '(hereinafter referred to as dies) having the same pattern regularly arranged as shown in FIG.
- the defect inspection method and the defect inspection apparatus targeted by the present invention compare the images at positions where the in-die coordinates are the same between adjacent dies, and perform defect detection determination based on the difference between the two images.
- Patent Document 4 diffracted light from a pattern on a semiconductor device is shielded using a spatial filter. By preventing the reflected image from being reflected in the inspection image, foreign matter and defects on the semiconductor device are detected with high sensitivity, thereby meeting the demand for finer DOI detection and high-speed inspection.
- the spatial filter configured by arranging rod-shaped plates as in the published patent, for example, it is formed on the Fourier transform plane, which is generated due to a plurality of pattern pitches formed on the semiconductor device. It is difficult to shield diffracted light having a plurality of pitches.
- a semiconductor device is illuminated using a plurality of light sources having a plurality of illumination wavelengths or a plurality of laser light sources having different oscillation wavelengths, a diffraction pattern having a plurality of pitches is formed on the Fourier transform plane even if the pitch is a single pattern. Since light is generated, it is difficult to shield it. Further, even if the light can be shielded, there is a problem that the defect detection sensitivity is lowered because the light shielding region becomes too wide and the substantial opening becomes small.
- the ratio of the wavelengths of the plurality of light is similarly determined even with a single pattern pitch. Except for the case where the relationship with the pattern pitch on the semiconductor device is special, it is difficult to shield the light, or even if the light can be shielded, the defect detection sensitivity decreases for the same reason.
- Patent Document 5 a method using a two-dimensional DMD (Digital Micromirror Device) as disclosed in Japanese Patent Application Laid-Open No. 2004-170111 (Patent Document 5), There are a method using a microactuator array and a micromirror as disclosed in Japanese Patent Application Laid-Open No. 2004-184564 (Patent Document 6), and a method using a micro shutter array by T. Takahashi et al.
- the former two that is, the method using a micromirror, gives the desired potential difference to each part of the device and changes the direction of the mirror, thereby changing the direction in which the light irradiated toward the mirror is reflected. It takes advantage of changing.
- the optical filtering method using a device that changes the reflection direction of light using a micromirror described above has no problem when an image is obtained based on the ON / OFF switch result, but a Fourier filter is used as a spatial filter.
- a Fourier filter is used as a spatial filter.
- the shutter is used only as an opening / closing operation and then used as a transmissive device, no aberration is generated unlike the case of reflecting light using a mirror, but to form a shutter, and In order to prevent malfunction due to sticking (sticking), it is necessary to make a cut by etching the substrate. As a result of light leaking from the cut, there is a problem that the light shielding ratio is lowered.
- micro shutter arrays when a high voltage is applied to the shutter body or wiring on the glass substrate, the wiring pattern on the shutter array and glass substrate are close to each other, causing dielectric breakdown and causing an accident such as discharge.
- the shutter array main body may be damaged.
- it is not possible to open / close an arbitrary shutter array by simply determining the opening / closing of the shutter sequentially for each intersection point.
- a complicated signal generator and simultaneous control of signals are required for each wiring.
- the present invention solves the above-described problems of the prior art and provides an optical filtering device capable of opening and closing an arbitrary shutter and having a high light shielding ability when the shutter is closed.
- the present invention provides an optical inspection method and inspection apparatus with high defect detection sensitivity using an optical filtering device that can open and close an arbitrary shutter and has a high light shielding ratio, solving the above-described problems of the prior art. To do.
- the present invention is configured as a system including the following means.
- the present invention also provides an optical inspection method and inspection apparatus using a spatial (optical) filtering device capable of opening and closing an arbitrary shutter and having a high light shielding ratio. That is, the present invention is configured as a system including the following means in order to achieve the above-described problems.
- an optical filtering device is formed by arranging a shutter pattern in a two-dimensional manner on an optically opaque thin film formed on an SOI wafer.
- a shutter array in which a lower portion of the SOI wafer is removed to form a hole and a working electrode is formed in the remaining portion of the SOI wafer; and a glass substrate on which an electrode pattern is formed and the shutter array is mounted;
- a power supply unit that supplies power to the electrode pattern formed on the glass substrate and the working electrode of the SOI wafer, and controls power supplied from the power supply unit to the electrode pattern and the working electrode in a two-dimensional manner.
- the shutter pattern formed in an array was opened and closed with respect to the hole, and the shutter pattern was configured to have a protrusion at the end.
- the defect inspection apparatus detects a defect as a defect among the illuminating unit that illuminates the inspection target substrate and the scattered light from the inspection target substrate illuminated by the illuminating unit.
- An optical filtering device that shields scattered light from a portion that is not desired, a detection optical system means for detecting scattered light that is not shielded by the optical filtering device, and a detection optical system means for detecting the scattered light.
- a shutter pattern is formed in a two-dimensional array on an optically opaque thin film formed on a wafer, and an SOI window in a lower portion of the shutter pattern is formed.
- a shutter array in which holes are formed and holes are formed and operating electrodes are formed on the remaining portion of the SOI wafer, a glass substrate having an electrode pattern formed on the surface and mounting the shutter array, and a glass substrate formed on the glass substrate.
- a shutter pattern formed by two-dimensionally arranging the power supply unit for supplying power to the electrode pattern and the working electrode of the SOI wafer and controlling the power supplied from the power feeding unit to the electrode pattern and the working electrode Was opened and closed with respect to the hole.
- the inspection target substrate is illuminated, and the scattered light from the illuminated scattered inspection target substrate is scattered from a portion that is not desired to be detected as a defect.
- Detects scattered light that is shielded by the optical filtering device and is not shielded by the optical filtering device processes the signal obtained by detecting the scattered light, detects defects in the inspection target substrate, and outputs information on the detected defects
- the optically opaque thin film generated on the SOI wafer is shielded by shielding the scattered light from the portion of the scattered light from the inspection target substrate that is not detected as a defect by the optical filtering device.
- the SOI wafer in the lower part of the shutter pattern formed in a three-dimensional arrangement is removed and a hole is formed to operate on the remaining part of the SOI wafer.
- the shutter pattern can be opened and closed by controlling the power supplied to the operating electrode of the shutter array in which the poles are formed and the electrode pattern formed on the surface of the glass substrate on which the shutter array is mounted.
- the scattered light is shielded by closing the desired shutter pattern by controlling the power supplied.
- an optical filtering device that is electrically safe and capable of changing the light shielding region at high speed using a simple system.
- the present invention also provides an optical inspection method and inspection apparatus with high defect detection sensitivity using an optical filtering device that uses a simple system, is electrically safe, and can change the light shielding area at high speed. Is possible.
- FIG. 1 It is a flowchart which shows the manufacture procedure of a micro shutter array. It is the top view which looked at the SOI part of the micro shutter array from the upper surface. It is the top view which looked at the SOI part of the micro shutter array from the lower surface. It is a top view of the glass with a wiring pattern which shows the wiring shape produced on the lower surface of the glass with a wiring pattern of a micro shutter array. It is A-A 'sectional view of a micro shutter carried in an optical filtering device. It is B-B 'sectional drawing of the micro shutter mounted in the optical filtering device. 2 is a plan view of a micro shutter formed on an SOI wafer 201. FIG.
- It is sectional drawing of the single micro shutter which shows the space
- FIG. 3 is a cross-sectional view of a single micro shutter showing a state in which reflected light from the shutter is shielded by a diaphragm in a configuration in which the shutter is closed in the optical system.
- FIG. 6 is a front view of a screen showing a state in which one micro-shutter cannot maintain the latch open.
- a voltage for controlling the shutter array of the optical filtering device is set on the screen displaying the image of the shutter array observed with the camera of the magnifying optical system and the graph showing the relationship between the potential difference between the drive electrode and the shutter and the rotation angle of the shutter.
- FIG. 6 is a front view of a screen showing a state where all the micro shutters are in a latch open state.
- a voltage for controlling the shutter array of the optical filtering device is set on the screen displaying the image of the shutter array observed with the camera of the magnifying optical system and the graph showing the relationship between the potential difference between the drive electrode and the shutter and the rotation angle of the shutter.
- FIG. 5 is a front view of a screen showing a state in which all the micro shutters are kept latched open with the potential difference set to 25 V, which is a user interface.
- it is a top view of a wafer in the state where the position was adjusted in wafer alignment performed before the start of inspection.
- FIG. 5 is a plan view of a wafer in a state before the position is adjusted in an example of wafer alignment performed before the start of inspection in a general inspection apparatus.
- FIG. 1st Example The diffracted light intensity distribution in the Fourier-transform surface before the spatial filter setting in the modification of the user interface for the light-shielding area setting of the spatial filter of the inspection apparatus using the optical filtering device using the micro shutter array in the first embodiment is shown.
- FIG. 1st Example The front of the screen which showed the spatial filter setting area light-shielded with the optical filtering device in the modification of the user interface for the light-shielding area setting of the spatial filter of the inspection apparatus using the optical filtering device using the micro shutter array in 1st Example
- a plurality of tabs are displayed so that a plurality of light shielding area patterns can be set. It is a front view of a screen. It is a front view of the screen of the user interface which sets the combination and the switching position of the scanning area and light-shielding area of the spatial filter of the inspection apparatus using the optical filtering device using the micro shutter array in the first embodiment.
- FIG. 6 is a plan view of a Fourier transform plane showing the distribution of bright spots on a Fourier transform plane by diffracted light from a repetitive pattern on a substrate, showing the positional relationship between the distribution of bright spots from the first repeat pattern and a linear light shielding pattern.
- FIG. 401 is a diagram 402 showing the positional relationship between the distribution of bright spots from the second repetitive pattern and the linear light shielding pattern
- the top view of the Fourier-transform surface which shows the state which shaded the distribution of the bright spot in the Fourier-transform surface of an oblique detection system with the long light-shielding pattern in the X direction of the board
- FIG. 1 It is a block diagram which shows the structure of the outline of the test
- FIG. 6 is an image diagram showing a distribution of scattered light scattered by a component having a high spatial frequency due to surface roughness of the sample when the sample is irradiated with illumination light. It is a graph which shows the relationship between the spatial frequency of the scattered light scattered by the component with a high spatial frequency by the surface roughness of a sample, and light intensity.
- FIG. 6 is an image diagram showing a distribution of scattered light scattered by a component having a low spatial frequency due to surface roughness of the sample when the sample is irradiated with illumination light. It is a graph which shows the relationship between the spatial frequency of the scattered light scattered by the component with a low spatial frequency by the surface roughness of a sample, and light intensity.
- FIG. It is the schematic diagram explaining the scanning method of the irradiation spot illuminated on the sample surface.
- optical filtering device 2000 using the micro shutter array in the present invention An example of the optical filtering device 2000 using the micro shutter array in the present invention will be described with reference to FIG.
- the optical filtering device 2000 includes a micro shutter array 2100, a glass substrate with wiring pattern 2020 on which a wiring pattern 2022 is formed, and a power supply member (including a connector) 2080. While maintaining the function as a transmissive shutter array, a high direct current voltage is applied to the electrode portion during operation, so that the risk of an electric shock accident due to contact with a hand or the like is reduced. It is desirable to provide the window material 2090. Further, in order to prevent sticking / opening / closing operation failure caused by moisture of the micro shutter, it is desirable that the packaging member 2070 includes an airtight holding member 2091 such as an O-ring. In order to open and close the micro shutter array 2100 in the filtering device 2000, a power supply 2200 including a drive control circuit is connected via a power supply member 2080.
- a region surrounded by a dotted line 2010 in FIG. 2A represents a single micro shutter.
- a single micro shutter 2010 includes an optically opaque shutter 2001, a working electrode 2002, a suspension 2003, and an opening 2004.
- FIG. 2B is a plan view of the SOI portion with the shutter 2001 of the micro shutter 2010 closed
- FIG. 2C is a plan view with the shutter 2001 open
- 2A is a cross-sectional view taken along the line AA in FIG. 2B.
- the shutter 2001 is connected to and integrated with the suspension 2003 in the vicinity of the center of the suspension 2003. For this reason, as the suspension 2003 is twisted in the direction perpendicular to the longitudinal direction, the integrated shutter 2001 opens and closes. In this state, no torsion is generated in the SOI portion 2016.
- FIGS. 2A, 2B, and 2G Next, a single micro shutter structure and a manufacturing method thereof will be described with reference to FIGS. 2A, 2B, and 2G.
- Micro shutter array is fabricated using SOI (S ilicon o n I nsulator ) wafer 201.
- SOI wafer 201 as shown in FIG. 2E, on the Si substrate 2012, the oxide insulating film (BOX layer: B uried Ox ide layer) 2014, (hereinafter referred to as SOI unit) surface Si layer 2016 is formed structure I am doing.
- the shutter 2001 and the suspension 2003 are manufactured by patterning a resist in the SOI portion 2016 using a technique such as lithography (S2301), performing etching (S2302), and making cuts 2006 and 2007.
- an opening 2004 is formed while leaving a part of the Si substrate 2012 as an electrode 2002 as shown in FIG. 2A (S2303).
- the micro-shutter array 2010 is manufactured by processing the SOI wafer in a MEMS process such as lithography or etching technology (S2201). Further, as shown in FIG. 2D, the light shielding pattern 2022 is formed on the upper surface of the glass substrate with wiring pattern 2020 and the wiring patterns 2021 and 2023 are formed on the lower surface by a MEMS process such as lithography or etching technique or a technique such as coating. (S2202).
- the pattern recessed portion 2027 of the wiring pattern 2021 formed on the lower surface of the glass substrate 2010 with the wiring pattern is formed so that the position where the light shielding pattern 2022 formed on the upper surface is substantially matched.
- the micro shutter array 2100 formed on the SOI wafer and the glass substrate with a wiring pattern 2020 are aligned and electrically connected and bonded (S2203).
- the wiring connected to the electricity supply member 2080 is connected to the wiring patterns 2021 and 2023 on the patterned glass substrate 2020, respectively (S2204).
- the packaging member 2070 and the transmitted light glass window material are arranged so that the micro shutter array 2100 is on the inside in consideration of the risk reduction risk of occurrence of an electric shock accident.
- 2090 is preferably used to assemble the optical filtering device 2000 in a dry atmosphere (S2205).
- confidentiality such as an O-ring is maintained between the packaging member 2070, the glass substrate with a wiring pattern 2020, and the transmitted light glass window material 2090 as shown in FIG.
- a member 2091 may be interposed.
- the notch 2006 as shown in FIGS. 2B and 2C is formed by etching, laser processing, or EB (Electron Beam) processing on the SOI portion on the SOI wafer.
- EB Electro Beam
- the optical filtering device uses the light transmitted through the notches 2006 and 2007 of the SOI portion 2016 (in FIG. 2A).
- a wiring pattern is formed on the glass substrate 2020 with a wiring pattern at a position facing the notches 2006 and 2007 of the SOI portion 2016 so as to shield the light (indicated by a thick arrow).
- the shape is devised so as not to cause a short circuit due to contact between the two. That is, as shown in FIG. 2B, by leaving the projection 2008 at the end of the shutter 2001, if the shutter 2001 rotates too far toward the patterned glass 2020 substrate, there is a possibility of contact with the glass substrate 2020 with the wiring pattern. A certain part is made to be only the projection 2008. Then, in the region on the side of the glass 2020 with the wiring pattern that the projection 2008 may come into contact with, the projection 2008 comes into contact with the glass substrate with the wiring pattern 2020 as shown in FIG. 2D. Even if it happens, it is possible to avoid the occurrence of a short circuit.
- the light shielding surface is provided on the surface of the glass substrate with wiring pattern 2020 opposite to the side on which the wiring pattern 2021 is formed.
- a metal pattern (light-shielding pattern) 2022 is formed.
- the micro shutter array 2010 is an array of micro shutters formed in the SOI part shown in FIG.
- the shutter rows 2018 arranged in the vertical direction are electrically connected to each other by the grooves 2017 in which the SOI portion 2016 is dug until the insulating film 2014 can be seen, and the shutters arranged side by side.
- the column is non-conductive. As will be described later, it is possible to open and close any shutter in the array by devising a voltage to be applied to the wiring that is conductive in the lateral direction.
- Openings 2004 formed in the Si substrate 2012 are arranged vertically and horizontally at a pitch in which micro shutters are arranged vertically and horizontally.
- the opening 2004 is formed by etching the Si portion 2012 from the Si substrate 2012 side by deep groove etching, and then removing the oxide insulating film (BOX layer) 2014 portion at the bottom of the opening 2004 of the Si substrate 2012 by means such as etching. It is a thing. Therefore, the shutter 2001 formed on the SOI portion 2016 can be seen from the lower surface side of the SOI substrate 201.
- Wiring patterns 2021 and 2023 for supplying power of two systems for operating the shutter 2001 formed on the SOI portion 2016 are formed on the surface of the glass with wiring pattern 2020 on which the micro shutter array 2100 is mounted.
- a light shielding pattern 2022 that is not energized is formed on the surface opposite to the side on which the micro shutter array 2100 is mounted.
- FIG. 4 shows the surface of the glass substrate with wiring pattern 2020 on the side where the micro shutter array 2100 is mounted, and the light shielding pattern 2022 formed on the opposite surface is not shown.
- the wiring pattern 2023 is used to supply a potential to each column (vertical direction in FIG. 4) of the shutter array.
- the wiring pattern 2021 is used to bring the closed shutter 2001 into the latch closed state.
- the wiring pattern 2021 has a wiring opening 2301 that is slightly smaller than the shutter 2001, and transmits light that has passed through the shutter 2001 when the shutter 2001 is in an open state.
- a chromium film is formed on a glass substrate on the order of 10 nm, and a gold or aluminum film is 50 nm or more, preferably 100 nm or more.
- a desired pattern may be obtained by performing a photo process and etching in the order of gold, aluminum, and chromium. This is because gold or aluminum is a convenient material for obtaining a desired light-shielding pattern, but the aim is to improve the adhesion with glass which tends to be insufficient by forming a thin chrome layer therebetween.
- the glass 2020 with a wiring pattern is used as a transmissive optical device.
- the method of etching the wiring patterns 2021 and 2023 and the light shielding pattern 2022 is based on wet etching. This is because when a pattern is formed by dry etching, a lot of minute scratches are generated on the glass substrate as a base material, which not only becomes a light scattering source but also a fatal light transmission as a transmission type optical device. This is because the rate drops.
- titanium, titanium nitride, or the like is sometimes used to improve film-to-film adhesion.
- such a film premised on dry etching is on the wiring pattern glass 2020 in this embodiment. It is not suitable for pattern formation.
- FIG. 5C is a plan view of the micro shutter 2010 formed on the SOI wafer 201.
- 5A is a view of the micro shutter 2010 of FIG. 5C mounted on the optical filtering device 2000 as seen from the AA ′ section of FIG. 5C
- FIG. 5B is a view of the micro shutter 2010 from the BB ′ section of FIG. 5C. Indicates.
- the wiring pattern 2023 and the SOI portion 2016 are fixed by the conductive adhesive 2028 so as to be conductive.
- the glass 2020 and the shutter 2001 are also in contact with each other and serve as a spacer.
- the distance between the glass 2020 and the SOI portion 2016 formed by the conductive adhesives 2028 and 2028 ' is controlled to about 15 to 35 ⁇ m, and more preferably 20 to 25 ⁇ m.
- Patent Document 7 Japanese Patent Application Laid-Open No. 2000-352943
- the structure is different from that of the present embodiment as shown in FIGS. 2A to 5C. It explains using.
- an electrode for latching the shutter is provided immediately above the opening 2004.
- ITO Indium Tin Oxide
- Al Al is used for the reflective type.
- the invention that can be used as a light transmission type optical device as in this embodiment corresponds to the backlight type. It is assumed that ITO is used as the metal electrode and functions as a device that transmits visible light.
- no electrode is present immediately above the opening 2004 as shown in FIG. This is because a metal that does not transmit light is used for the electrodes so that the light shielding rate is high when the shutter is closed.
- ITO is used as the metal electrode.
- illumination light having a wavelength of ultraviolet to deep ultraviolet is generally used in order to ensure defect detection sensitivity.
- the ITO film does not transmit deep ultraviolet light in particular, and therefore cannot be replaced by the device of the invention described in Patent Document 7.
- the shutter of this embodiment has a protrusion at the tip.
- region to contact is limited to the projection part.
- the protruding portion small, a large warp does not occur even when the protruding portion contacts the glass substrate.
- the three-dimensional structure of the device differs between the invention described in Patent Document 7 and the invention of this example. 5A and 5B, the distance between the glass substrate 2020 and the SOI portion 2016 is controlled to about 15 to 35 ⁇ m.
- the conductive portions having different potentials are located in close proximity in this way ( Wiring, shutters, etc.) are installed, and when a high voltage is applied to the conductive parts on the glass substrate 2020 or the shutter array 2100, even if these are sealed with dry air, dielectric breakdown occurs. It may discharge and cause damage to the conductive part.
- the standard electric field strength for dielectric breakdown of dry air is set to about 3 kV / mm. That is, since the distance between the glass substrate 2020 and the SOI portion 2016 is preferably about 20 to 25 ⁇ m, if the potential difference between the wiring patterns 2021 and 2023 on the glass 2020 and the shutter 2001 exceeds 60 to 75 V, dielectric breakdown may occur. There is. Accordingly, the absolute value
- the potential difference Vlatch for bringing the shutter into the latched state was about 40V.
- the latch operation can be performed without any problem even if the above dielectric breakdown is taken into consideration.
- the distance between the latched shutter and the wiring patterns 2021 and 2023 on the glass substrate 2020 becomes narrower. Although it depends on the design, it is about 10 ⁇ m in the narrowest place. Therefore, the potential difference applied to the shutter in the latched state is quickly lowered to Vitmed described with reference to FIG. 7B, thereby avoiding unnecessary dielectric breakdown.
- a potential difference ⁇ V is generated between the operating electrode 2002 and the shutter 2001 that is connected in an electrically insulated state with the oxide insulating film 2014 when the shutter 2001 is closed (initial state).
- of the electric field intensity obtained by dividing the potential difference ⁇ V by the average distance d (see FIG. 6C) between the working electrode 2002 and the shutter 2001 acts on both.
- one of the potentials of the working electrode 2002 and the shutter 2001 does not necessarily have to be a ground potential, and the above-described potential difference may be generated relatively.
- the suspension 2003 is twisted according to the strength of the force, and the shutter 2001 is opened as shown on the right side of FIG. 6A.
- the distance d ′ between the shutter 2001 and the working electrode 2002 becomes narrower than when the shutter closing (left side in FIG. 6A: initial state) ⁇ opening (right side in FIG. 6A) operation is started, the absolute value of the electric field intensity is reduced.
- the twist restoring force of the suspension 2003 increases depending on the twist angle.
- the restoring force of the torsion of the suspension 2003 becomes dominant, and the shutter 2001 is closed as the torsion of the suspension 2003 is restored.
- the above is the cycle of opening and closing the shutter 2001.
- the magnitude of the attractive force 2107 is proportional to the square of the absolute value
- the horizontal axis represents the potential difference ⁇ V between the shutter 2001 and the working electrode 2002
- the vertical axis represents the twist angle ⁇ of the suspension 2003. If ⁇ is approximately 0, the shutter 2001 is in the closed state, and if ⁇ is approximately 90, the shutter 2001 is in the open state.
- the shutter 2001 is in a closed state (initial state) even when ⁇ V is raised to Vstay (S702).
- ⁇ V is further increased, the shutter opens completely when Vopen is exceeded ( ⁇ 90 °: latch open state).
- S703 Even in the state where ⁇ V is lowered from Vopen to Vstay (S704), the state where the shutter is completely opened (latch open state) is maintained. That is, even when the potential difference ⁇ V is the same, it is possible to realize the closed state (S702) and the open state (S704).
- ⁇ V is further lowered to become smaller than Vclose, the shutter 2001 is closed. Finally, ⁇ V is lowered to 0, and the initial state is restored (S701).
- of the potential difference in the initial state (S701) may be any potential difference as long as it is smaller than Vclose, and
- the distance d2 between the shutter 2001 and the wiring pattern 2021 when the shutter is closed (initial state) ⁇ the closing operation is started (the initial state on the left side in FIG. 7C).
- the distance d2 ′ between the shutter 2001 and the wiring pattern 2021 (see the latched state on the right side of FIG. 7C) is narrower than the absolute value
- the latch state is maintained even when the potential difference ⁇ V2 ′ ( ⁇ V2> ⁇ V2 ′) is lower.
- the potential difference ⁇ V2 is further reduced to almost zero, the force that restores the twist of the suspension 2003 is dominant, and the shutter 2001 returns to the initial state (left side in FIG. 7A).
- the horizontal axis of the graph of FIG. 7B is the potential difference ⁇ V2 between the shutter 2001 and the wiring pattern 2021, and the vertical axis is the twist angle ⁇ 2 of the suspension 2003.
- the rotation direction is the opposite direction to that in FIG. 6A.
- the shutter 2001 is in the closed state (the state on the left side in FIG. 7C), and if ⁇ 2 is substantially ⁇ max, the shutter 2001 is in the forcibly closed (latched state) (the state on the right side in FIG. 7C). Show.
- of the potential difference in the initial state may be any potential difference as long as it is smaller than Vrel, and
- the shutter 2001 described in FIGS. 7A to 7C is placed on the wiring pattern-attached glass substrate 2020 side.
- a force larger than the force to be attracted is applied between the working electrode 2002 and the shutter 2001, and the shutter 2001 is pulled toward the working electrode 2002 to open (latch open).
- the operating potential difference ⁇ V of the shutter 2001 should be set and operated within a range of V′open ⁇ V ⁇ V ′′ open.
- the operating electrode 2002 since the operating electrode 2002 has the same potential for all the shutters on the micro shutter array 2100, all the shutters to be closed in advance are in a latch closed state, and a potential difference ⁇ V is applied to the operating electrode 2002 to close the latch. After all the unoccupied shutters 2001 are opened, the potential difference applied to the working electrode 2002 is lowered to such an extent that the shutters 2001 are not closed so that the opened shutters 2001 are maintained in the opened state (latched open state). At this time, the shutter 2001 ′ in the latched state may be returned to the closed state (initial state) by ⁇ V2 ⁇ 0.
- the potential difference applied to the shutter 2001, the operation electrode 2002, and the wiring pattern 2021 is set to zero.
- FIG. 9 shows a setting flow for obtaining a desired filtering state of the optical filtering device 2000 according to the present invention.
- a voltage is applied to the pattern wiring 2021 passing immediately above the focused shutter 2001 (S901), and a voltage is applied to the shutter row 2018 passing through the focused shutter 2001 so that the potential difference with the pattern wiring 2021 becomes Vlatch (S902).
- the voltage is corrected so that the potential difference between the shutter row 2018 and the pattern wiring 2021 becomes Vitmed (S903), and the focused shutter 2001 in the latched state is held.
- the wiring of the glass substrate with a wiring pattern 2020 has a function of forcibly closing the shutter 2001 and a function of blocking light leaked from the cut portions (2006 and 2007 in FIG. 2B). Therefore, the wiring portion may be anywhere as long as the shutter 2001 can be forcibly closed.
- a forced closing wiring pattern 2021 ′ is formed on the surface opposite to the shutter array 2100 with respect to the glass substrate with wiring pattern 2020, and the wiring patterns 2021 and 2022 (light-shielding) in the configuration shown in FIG. Pattern).
- 10A and 10B parts having the same numbers as those in FIG. 2 show the same configurations.
- FIG. 10B shows a glass substrate with wiring pattern 2020 and a wiring pattern 2021 ′ formed thereon (shutter array 2100).
- the forced closing wiring pattern 2021 ′ is formed on the surface opposite to the shutter array 2100 with respect to the glass substrate with wiring pattern 2020, so that the shutter 2001 comes into contact with the wiring pattern 2021 ′. It is possible to prevent a short accident.
- the wiring pattern 2021 ′ and the light shielding pattern 2022 shown in FIG. 2A may be formed on the glass substrate with wiring pattern 2020 without being divided, and the glass with wiring pattern as shown in FIG. 2A. Since there is no need to align the wiring pattern 2021 formed on the lower side of the substrate 2020 (shutter array 2100 side) and the metal pattern (light-shielding pattern) 2022 formed on the upper side of the glass substrate 2020, the wiring formation process is simplified. Is expected.
- the shutter 2001 is formed by cutting the SOI portion of the SOI wafer.
- the shutter 2001 is formed by forming a thin metal film such as aluminum or gold on the SOI portion. The light shielding performance due to may be improved.
- the ground state 1 is a case where all the potentials are 0, which is an initial state of power-on of the device of this embodiment, and the shutter 2001 is in a closed state (a state on the left side in FIG. 7A).
- the stable state (S1101) ⁇ 5V is applied to the wiring patterns 2021, 2023 and the shutter 2001, the absolute value
- the reference state 1 (S1102) the voltage applied to the wiring patterns 2021 and 2023 from the stable state (S1101) is changed from -5V to + 5V, and the absolute value
- the shutter 2001 is in a closed state.
- the voltage applied to the shutter 2001 from the reference state 1 (S1102) is changed from ⁇ 5V to ⁇ 20V, and the absolute value
- the transition level (S1104) is a state in which the voltage applied to the wiring patterns 2021 and 2023 from the intermediate state 1 (S1103) is changed from + 5V to + 20V, and the absolute value
- the shutter 2001 shifts from the closed state to the latch closed state (the state on the right side in FIG. 7A).
- the intermediate state 2 (S1105) the voltage applied to the wiring patterns 2021, 2023 from the transition level (S1104) is changed from + 20V to + 5V, and the absolute value
- the shutter 2001 is in a latch closed state.
- Reference numeral 2001 denotes a latch closed state.
- the state returns to the stable state (closed state: S1101).
- the above is an example of voltage values applied to the wiring patterns 2021 and 2023 on the glass substrate with wiring pattern 2020 and the shutter 2001 during the shutter closing operation cycle in the shutter opening / closing operation cycle.
- the shutter does not shift from the latch closed state to the closed state unless the reference state 2 (S1106) is passed. Using this characteristic, it is possible to shift the shutter included in the entire region to be shielded from the closed state to the latch closed state.
- FIG. 12 shows a procedure for shifting the shutter 2001 included in the entire region to be shielded from the closed state to the latch closed state.
- the shutters arranged vertically are electrically connected to each other, and the wiring patterns 2021 on the glass substrate with wiring patterns 2020 arranged horizontally are arranged. Conducted.
- the transition from the closed state to the latch closed state does not occur even if one of the two is in the high voltage state (V A2 , V B2 ). Then, the transition from the closed state to the latch closed state occurs, and once the state shifts to the latch closed state, the latch closed state is continued even when both of them become low voltage states (V A1 , V B1 ).
- the electrically connected vertical shutter rows are selected in order from the right to be in a high voltage state (V A2 ), and the horizontal direction formed in the upper portion of the shutter included in the region to be shielded from light.
- V A2 high voltage state
- V B2 high voltage state
- the shutter 2001 included in the region to be shielded from light is in the latch closed state (3 in FIG. 12).
- S1104 or 4: S1105 state is sequentially repeated from S1201 to S1212 to shift all the shutters 2001 included in the desired light-shielding region to the latch closed state.
- a high voltage typically 200 V or more
- All the shutters in the closed state are shifted to the latch open state (see FIG. 6A).
- an intermediate voltage typically about 40 V
- the shutter 2001 once in the latch-open state is latched. Keep open.
- the shutter 2001 and the working electrode 2002 have the same potential.
- the electrostatic attraction does not work with the working electrode 2002, and the shutter 2001 returns to the initial closed state (left side in FIG. 6A) due to the restoring force of the torsion of the suspension 2003.
- the voltage applied to the shutter 2001 is ⁇ 5 V while the shutter 2001 is in the operation of closing ⁇ latch opening ⁇ closing.
- S1102 to S1106, S703, and S704 shown in FIG. 12 correspond to the initial state (closed state) and the latch closed state described in FIG. 11A and the latch open state described in FIG. 6, respectively.
- FIG. 14A shows the relationship between the shutter array indicated by the circle 1301 and the switch arrays 5311 to 5313 and 5331 to 5334.
- FIG. 14B is a graph showing the relationship between the state transition signal source outputs (5301 and 5303) and the stable state voltage outputs (5302 and 5304).
- FIG. 14C is a table showing the connection state of the switches 5311 to 5313 and 5331 to 5334 with the signal lines 5301 to 5304 at a certain time (time of 0 to t 0 and time of t 0 to 2 ⁇ t 0 ).
- a control power source for driving the shutter array As a control power source for driving the shutter array, a switch array (5331 to 5334 in the horizontal direction, 5311 to 5313 in the vertical direction), a signal source output for state transition (5301 and 5303), and a voltage output in a stable state (5302 and 5302) 5304) will be described.
- the shutter array is an array of shutters having very similar opening / closing characteristics throughout, if the applied voltage is selected appropriately, it is possible to mount with one applied voltage for each shutter row.
- the present embodiment is such a system.
- the shutter rows 5231 to 5234 and the wiring rows 5211 to 5213 are electrically connected to switches 5311 to 5313 and 5331 to 5334, respectively.
- the switches 5311 to 5313 can switch the signal lines 5303 and 5304, and the switches 5331 to 5334 can switch the signal lines 5301 and 5302, respectively.
- a periodic signal as shown in FIG. 14B flows through the signal lines 5301 to 5304 at a period t0.
- the potentials of V A1 , V A2 , V B1 , and V B2 in FIG. 14B are Vrel ⁇
- 5301 changes from VB1 to VB2 it is important that 5303 once becomes VA2, then returns to VA1, and further 5301 changes from VB2 to VB1.
- the signal lines of the shutter trains that are not directly related to the latch closed state (in this case, 5212 at time 0 to t0, 5213 at time t0 to 2 ⁇ t0, and 5231 and 5232) If a certain voltage is applied (the voltage that maintains the latch closed state if it is already latched, or the voltage that maintains the closed state if it is simply closed), the state between the shutter closed state and the latch closed state No transition occurs.
- the latch control of the shutter 1301 is realized by using the control of the switch arrangement so that the necessary control signal is applied only to the shutter row directly related to the closed state of the latch.
- the switches 5311 to 5313 are connected to the signal line 5304, the switches 5331 to 5334 are connected to the signal line 5302, and a signal to be supplied to the signal line 5302 is set to V A1 . It will be realized.
- This embodiment is an implementation example that realizes shutter latch control by using only a constant voltage source and a switch arrangement.
- the shutter rows 5231 to 5234 and the wiring rows 5211 to 5213 are electrically connected to switches 5341 to 5343 and 5351 to 5354, respectively.
- the switches 5341 to 5343 can switch the signal lines 5323 and 5324, and the switches 5351 to 5354 can switch the signal lines 5321, 5322, and 5324, respectively.
- a constant voltage flows as a signal in the signal lines 5321 to 5324 as shown in FIG. 15B at the period t0.
- V A1 , V A2 , V B1 , and V B2 are Vrel ⁇
- each switch is switched to be connected to the signal line shown in the table.
- all desired shutters 5238 are in a latched state.
- the latch closed state can be maintained by connecting each switch to the signal line shown in the 3 ⁇ t0- column. Note that by connecting the switches 5341 to 5343 and 5351 to 5354 to the signal line 5324, the latched state of all the shutters is released.
- the optical filtering device 2000 of the present invention even if the shutter 2001 is attracted to or damaged by the glass substrate with a wiring pattern 2020, a desired voltage is applied as long as no short circuit occurs due to contact with the working electrode 2002 or the wiring pattern 2021. It is possible to apply. In other words, the open / close state of the shutter 2001 cannot be managed only by monitoring the applied voltage. Therefore, the two-dimensional spatial filter system 32 including the optical filtering device 2000 and the magnification observation system 3210 for confirming the open / closed state of the shutter is configured (see FIG. 16A).
- the magnification observation system 3210 includes at least an illumination 3211, a lens 3212, a camera 3213, and a diaphragm 3218.
- the position of the camera 3213 is set at a position conjugate with the shutter 2001 through the lens 3212. If the reflected light 3214 from the focused shutter 2001 reaches the camera 3213 and looks bright (FIG. 16B), the shutter 2001 is in the closed state, and if there is no reflected light and looks dark, the shutter 2001 is determined to be in the open state (FIG. 16C). .
- the state is determined by changing the aperture size of the diaphragm 3218 and picking up an image with the camera 3213.
- the shutter 2001 looks dark.
- the aperture 3219 of the diaphragm 3218 is enlarged so that the reflected light from the shutter 2001 in the latch closed state reaches the camera 3213, the shutter 2001 looks bright (FIG. 16E). Therefore, first, the aperture 3219 of the diaphragm 3218 is enlarged, and an image of light reflected by the surface of the shutter 2001, condensed by the lens 3212, and passed through the aperture 3219 is captured by the camera 3213. From the light and darkness of the position of the shutter 2001, the shutter 2001 is obtained. The open / close state of the is determined.
- the aperture 3219 of the diaphragm 3218 is reduced, reflected by the surface of the shutter 2001, collected by the lens 3212, and an image of the light passing through the aperture 3219 is captured by the camera 3213. It is determined whether 2001 is in a closed state or a latched state. When the open / closed state of the shutter 2001 is not confirmed, the illumination 3211 is preferably turned off or shielded so that illumination light does not strike the optical filtering device 2000.
- the width 1761 of the suspension 2003 of the shutter 2001 shown in FIG. 17B varies depending on the shutter due to the occurrence of variations in the MEMS photo process and the etching process.
- the variation range is generally about 10% of the entire width 1761.
- the force that recovers the twist of the suspension 2003 is used in order to recover the closed state of the shutter 2001.
- the recovery force of the twist is the cross-sectional area of the suspension 2003. Inversely proportional to When the width 1761 of the suspension 2003 varies and the cross-sectional area of the suspension 2003 changes, the torsional recovery force of the suspension 2003 also changes, resulting in variations in the operating characteristics of the suspension 2003.
- each shutter 2001 generates a force proportional to an electrostatic force based on a potential difference generated between the shutter 2001 and the wiring 2021 formed on the glass substrate 2020 with the wiring pattern, so that the closed state and the latch closed. Transitions between states occur.
- the electrostatic force generated between the wiring formed on the shutter 2001 and the glass substrate 2020 with the wiring pattern is inversely proportional to the square of the gap distance between the shutter 2001 and the glass substrate 2020 with the wiring pattern. For this reason, the potential difference at the time of transition from the closed state to the latch closed state varies depending on variations in the gap distance between the shutter 2001 and the glass substrate with the wiring pattern.
- FIG. 19A shows an example of a user interface 4721.
- the user interface 4721 has a shutter array image 4731, a graph 4732 showing the relationship between the potential difference between the drive electrode 2002 and the shutter 2001 and the rotation angle of the shutter 2001, and a potential difference setting button for setting the potential difference between the drive electrode 2002 and the shutter 2001.
- 4751 a save button P1804 for saving the set result, and a button P1805 for clearing the displayed contents and returning to the original state are displayed.
- the potential difference setting button 4751 of the user interface 4721 By dragging the potential difference setting button 4751 of the user interface 4721 to the right or pressing the + button 4752, the difference between the voltages applied to the shutter 2001 and the working electrode 2002, that is, between the shutter 2001 and the working electrode 2002 is displayed. Increase the potential difference.
- a shutter array image 4731 output from the camera 3213 of the magnification observation system 3210 for confirming the open / close state of the shutter is displayed.
- the potential difference is increased by operating the potential difference setting button 4751 or the + button 4752, and when all the shutters are opened and the shutter part looks dark, the button P1802 is clicked on the graph 4732 ( B) Record the potential difference V′open at which all the shutters open (FIG. 19B). From that point on, by dragging the potential difference setting button 4751 to the left or pressing the ⁇ button 4753 to reduce the applied potential difference between the shutter 2001 and the working electrode 2002, there is no change in the state that all the shutters are opened for a while. When the potential difference decreases to a certain potential difference, only one shutter is first closed.
- V′close at which the shutter starts closing is recorded (FIG. 19C).
- V'stay in (1) is selected within the range from V'close in (C) to Vopen in (A), and V'open in (2) is selected as it is in (B).
- the shutter operates and the voltage to be applied to the shutter row is selected.
- FIG. 21A shows a block diagram of the inspection apparatus 1 to which the optical filtering device using the micro shutter array in Example 1 is applied.
- the inspection apparatus 1 includes an illumination optical system 10, a substrate transport system 20, a detection optical system 30, a focus measurement system 50, an image processing system 60, a control processing system 80, an interface system 90, and a pupil plane observation system 310. Yes.
- the illumination optical system 10 includes a laser light source 11 and a beam shaping lens 12, and the light emitted from the laser light source 11 is appropriately shaped by the lens 12 to illuminate the inspected substrate 100.
- a linear region that is long in one direction on a substrate to be inspected (semiconductor wafer: substrate) 100 is illuminated.
- the substrate transport system 20 includes an X stage 21, a Y stage 22, a Z stage 23, a substrate chuck 24, and a ⁇ stage 25.
- a point light source 109 is placed adjacent to the substrate chuck 24 and at substantially the same height as the wafer surface.
- the detection optical system 30 includes an objective lens 31, an optical filtering device 2000, an imaging lens 33, an optical sensor 35, and an A / D conversion unit 36.
- an integral type sensor TDI (Time Delay Integration) sensor
- a polarizing filter 34 may be installed between the imaging lens 33 and the optical sensor 35.
- FIG. 21A shows a configuration diagram including the polarization filter 34.
- the pupil plane observation system 310 includes a half mirror 319, lenses 311 and 313, and an area sensor 315 so that the light intensity distribution on the Fourier transform plane of the objective lens can be observed.
- the half mirror 319 transmits a part of the light that has been collected by the objective lens 31 and transmitted through the optical filtering device 2000 out of the scattered light from the substrate 100 illuminated by the illumination optical system 10, and the direction of the imaging lens 33. And the remaining light is reflected and guided toward the pupil plane observation system 310.
- the focus measurement system 50 includes an illumination optical system 51, a detection optical system 52, an optical sensor 53, and a focus deviation calculation processing unit 54.
- the image processing system 60 includes an adjacent die image position shift information calculation unit 61 and a data processing unit 62 that performs defect determination / detection processing using the die difference image.
- the adjacent die inter-image image misalignment information calculation unit 61 and the data processing unit 62 each include a memory having a sufficient capacity for storing image data.
- the control / processing system 80 obtains an image by synchronizing at least the transport system control unit 81 for controlling the transport system 20, the illumination light source control unit 82, the first detection optical system 30 and the second detection optical system 40.
- Sensor control unit 83, defect information processing unit 84 that performs merge processing and classification processing of defect information 600 output from first image processing system 60 and second image processing system 70, and overall control A unit 89 is provided.
- a power supply unit 86 including the control circuit of the optical filtering device 2000 is also illustrated.
- the interface system 90 displays at least a data storage unit 91 for storing defect information 650 processed and output by the control / processing system 80, an input unit 92 for performing inspection condition setting and control processing information input, and defect information 650.
- Display section 93 for displaying control processing information.
- 21B and 21C show the effect of the conical curved lens used as the shaping lens 12 in this embodiment.
- this is used when the laser is irradiated from a direction rotated by ⁇ with respect to the y-axis direction of the wafer and inclined at an angle ⁇ in the z-axis direction.
- the conical curved lens 12 when used, it is possible to form an on-slit beam 199 having a minor axis in the x-axis direction and a major axis in the y-direction on the wafer 100.
- a normal cylindrical lens 128 is used to shorten the length on the wafer 100 in the x-axis direction. It is possible to form an on-slit beam 199 whose axis is long in the y direction.
- FIG. 22 shows a flowchart of the substrate inspection process using the inspection apparatus according to this example.
- the substrate 100 is loaded on the inspection apparatus 1 (S2201) and held by the substrate chuck 24.
- the inspection apparatus 1 performs an alignment operation (S2202), thereby eliminating the tilt of the substrate 100 and obtaining the wafer origin coordinates 190 (see FIG. 20A) (S2203).
- the substrate 100 is scanned (S2204), and an optical image 301 (see FIG. 26C) near the surface of the substrate 100 is acquired (S2205). Based on the obtained image, defects near the surface of the substrate 100 and the presence or absence of foreign matter are determined by performing defect determination processing (S2206).
- defect determination processing a method for defect determination processing, a method for detecting a mismatched portion as a defect by comparing the acquired optical image 301 with a reference image stored in advance, or a threshold value for which a signal of the optical image 301 is set in advance. There is a method of detecting a portion larger than the threshold signal level as a defect compared to the signal level.
- FIG. 23 shows a substrate inspection condition setting flow using the inspection apparatus according to the present invention.
- basic design information such as the die size and arrangement of the wafer to be inspected (substrate 100) is input from the input unit 92 (S2301).
- illumination conditions such as illumination angle (azimuth and elevation angle) and illumination polarization are input from the input unit 92 and set (S2302).
- detection optical conditions optical magnification, presence / absence of light detection, etc.
- S2304 defect processing parameters
- the wafer 100 to be inspected is loaded (S2305) and the alignment is adjusted (S2306).
- the wafer 100 to be inspected is moved so that a region having a pattern from which the diffracted light is to be removed by the spatial filter (optical filtering device 2000) enters the region 199 irradiated with illumination light ( S2307).
- the area 3220 shielded by the optical filtering device 2000 is set (S2308).
- the wafer 100 to be inspected is trial-inspected under the inspection conditions set above (S2311). If sufficient defect detection sensitivity can be achieved (S2312), the substrate inspection condition setting is completed. When the defect detection sensitivity is insufficient, the set condition is corrected by returning to the setting of the illumination condition (S2302).
- FIG. 24 shows an operation flow when the surface of the substrate to be inspected is illuminated with a sheet beam and an inspection image on the surface of the substrate is detected using an optical sensor (TDI sensor) 35.
- TDI sensor optical sensor
- the substrate 100 is loaded on the inspection apparatus 1, and the substrate 100 is fixed by the wafer chuck 34 (S2401).
- wafer alignment is performed using the alignment mark 108 (see FIG. 20B) on the substrate 100, and an offset 2101 (see FIG. 20B) and an inclination 2102 (see FIG. 20B) between the coordinates on the substrate 100 and the coordinates of the substrate scanning system. Reference) is measured (S2402).
- the transport system control unit 81 controls the ⁇ stage 25 to rotate in the reverse direction by the tilt 1302 so that the tilt becomes almost zero.
- the alignment of the substrate 100 is performed again, and the offset 2101 between the coordinates on the substrate 100 and the coordinates of the substrate scanning system is measured again.
- the optical filtering device 2000 is controlled to shield a preset area (S2403).
- the X stage 21 is scanned (S2404).
- the X stage 21 is moved at a substantially constant speed while the linear region 199 on the substrate 100 is irradiated with the laser shaped by the beam forming lens 12.
- the shutter (not shown) of the light source 11 is opened within a range where the illumination area 199 of the laser molded by the beam forming lens 12 is on the substrate 100, and illumination by the laser molded by the beam forming lens 12 is performed.
- the TDI sensor is operated in synchronization with the scanning of the X stage 21, and the surface image of the substrate 100 is acquired at once (S2406).
- the Y stage 22 has a width that can be collectively measured by the optical sensor 35 until a substrate surface image of the entire measurement region on the substrate designated in advance is acquired (S2407). Is moved (S2408), and the X stage 21 is repeatedly scanned. When completed, the substrate 100 is unloaded (S2409), and the operation as the inspection apparatus is completed.
- the X stage 21 is driven by the transport system control unit 81, and the substrate 100 is imaged by the detection optical system 30 while continuously moving the substrate 100 in the direction indicated by the arrow in FIG.
- a difference image 303 is calculated from the inspection image 301 obtained by imaging as shown in FIG. 26A and the adjacent die image 302 serving as a reference image using the positional deviation information between them as shown in FIG. 26C (S2601). This is repeated for one scan of the x stage (hereinafter referred to as one column).
- the variation in the brightness value of the difference image 303 at a location corresponding to the same portion of a plurality of dies for one column is calculated for each pixel (S2602).
- 26D shows an image 304 obtained by superimposing the inspection image 301 and the adjacent die image 302 on the top.
- the middle graph displays the brightness value of each pixel of the inspection image 301 and the brightness value of each pixel of the adjacent die image 302 on the line AA ′ in the upper superimposed image.
- the signal waveform 301 ′ of the inspection image 301 in which the defect 307 exists has a peak value in the portion where the defect exists, with respect to the signal waveform 302 ′ of the adjacent die image 302 in which the defect 307 does not exist.
- the defect determination threshold value 305 of the pixel of interest is determined by multiplying the brightness value variation 304 by a coefficient set in advance using the user interface (S2603).
- the defect determination threshold value 305 is set to be relatively large in a place where the difference between the brightness value of the pixel of the inspection image 301 and the brightness value of the corresponding pixel of the adjacent die image 302 is small.
- the threshold value 305 for defect determination is set to a relatively small value at a place where is large.
- the determined defect determination threshold value 305 and the absolute value 306 of the brightness value of the difference image 303 are compared for each pixel (the middle graph in FIG.
- the defect determination method is similar to the above-described processing after combining image brightness values of two adjacent images 301 and 302 as described in JP-A-2003-83907 (Patent Document 1).
- Defect determination may be performed based on the data voted on the multi-dimensional space possessed in the image, that is, using the lightness value information of the inspection image and the difference information of the lightness value of the inspection image and the reference image To do If may.
- the illumination conditions used for the inspection of the substrate 100 are set (S2701).
- the stage 100 is operated to move the substrate 100 so that the pattern portion to be shielded from diffracted light enters the illumination light irradiation region (S2702).
- a light intensity distribution image 3235 (see FIG. 28A) on the Fourier transform plane including the diffracted light from the pattern is acquired by the pupil plane observation system 310 (S2703).
- all the shutters 2001 that can be normally opened and closed on the optical filtering device 2000 are in an open state, and all the light incident on the openings 2004 of the optical filtering device 2000 is transmitted. .
- the power supply unit 86 controls the individual shutters 2001 of the optical filtering device 2000 to set the light blocking region of the optical filtering device 2000 (S2704). .
- the light intensity distribution on the Fourier transform plane of the objective lens 31 is measured by the pupil plane observation system 310. It is actually measured in the form (S2706), and it is confirmed that the region where the strong diffracted light is incident is shielded, that is, the desired shielded state 3235 ′ (FIG. 18C) is obtained (S2707). If the desired light shielding state is obtained, the light shielding region setting on the Fourier transform plane is completed. If the desired light shielding state is not achieved, the process returns to S2704 again to set (adjust) the light shielding region of the optical filtering device 2000.
- FIGS. 28A and 28B show examples of a GUI screen for setting a light shielding area.
- FIG. 28A shows an initial state.
- an area 3211 for displaying the intensity distribution 3235 of the diffracted light on the pupil plane from a preset pattern area and a light shielding area 3220 of the spatial filtering device (spatial filter) 2000 for the intensity distribution 3235 of the diffracted light.
- a slide bar 9352 and a numerical value input window 9353 are displayed as an area 3214 for setting a light shielding threshold for the diffracted light intensity. For each diffracted light intensity distribution, the light shielding threshold value is set by moving the slide bar 9352 or inputting a numerical value into the window 9353.
- FIG. 28B shows a state where a partial area is set as a light-shielding area.
- a pixel of the spatial filter 2000 including a pixel whose brightness value is larger than the light shielding threshold set in the region 3214 for setting the light shielding threshold is automatically designated as the light shielding region, and the intensity distribution 3235 of the diffracted light It displays in the area
- the region 3213 displaying the filtered intensity distribution 3235 ′ the region shielded from light by the spatial filter 2000 is filled and displayed.
- the method for setting the light shielding region instead of setting the light shielding threshold value in the region 3214 described above, using a pointing device such as a mouse, click the pixel of the desired spatial filter 2000 to set the light shielding region. At the same time as the setting is turned ON / OFF, the filling may be turned ON / OFF. By this method, it is also possible to set the light shielding ON / OFF of each pixel of the spatial filter 2000.
- the result of simulation calculation of the inspection image of the PSL sphere that is a standard defect when the currently set light-shielding region is applied to the inspection may be shown.
- the calculation method is as follows.
- the light scattered light distribution on the pupil plane when the PSL spheres scattered on the substrate 100 are illuminated is calculated in advance including the phase for each illumination condition, and Fourier transform and inverse Fourier transform are performed in consideration of the light shielding region.
- the image formation is calculated using.
- the scattered light distribution varies greatly depending on the size of the PSL sphere, the magnitude of the influence varies even under the same light shielding conditions.
- simulation images 3215 and 3216 of two types of large and small PSL spheres the influence on the defect inspection sensitivity by the currently set light-shielding region is confirmed from a plurality of viewpoints.
- the diffracted light from the pattern formed in the vicinity of the surface of the substrate 100 is shielded by using the two-dimensional spatial filter system 32 according to this embodiment installed on the Fourier transform surface of the objective lens 31. A flow for setting an area will be described.
- illumination conditions used for wafer inspection are set (S2901).
- the stage 100 is operated to move the substrate 100 so that the pattern portion to be shielded from diffracted light enters the illumination light irradiation region (S2902).
- the light intensity distribution on the Fourier transform plane including the diffracted light from the pattern is acquired as an image 3235 (S2903).
- the power supply unit 86 is optically based on the idea of shielding the relatively strong diffracted light generated by the scattered light from the pattern regularly formed on the substrate 100.
- the light shielding area 3220 is set by controlling the individual shutters of the filtering device 2000 (S2904).
- the camera 3213 of the two-dimensional spatial filtering system 32 confirms that the filter in the light shielding region 3220 of the spatial filter is closed while confirming an output image obtained by imaging the open / closed state of the shutter 2001 of the optical filtering device 2000.
- the spatial filter set again the light intensity distribution on the Fourier transform plane is measured as an image 3235 'and displayed on the screen (S2906). It is confirmed that strong diffracted light is shielded (S2907), and if the desired shielded state is reached, the setting of the shielded region on the Fourier transform plane is completed. If not, the procedure from S2908 is repeated until a desired light shielding state is reached.
- the diffracted light from the pattern formed in the vicinity of the surface of the substrate 100 is used using the two-dimensional spatial filter system 32 according to this embodiment installed on the Fourier transform plane of the objective lens 31.
- a flow for setting a light shielding area will be described.
- illumination conditions used for wafer inspection are set (S3001).
- the stage 100 is operated to move the substrate 100 so that the pattern portion to be shielded from diffracted light enters the illumination light irradiation region (S3002).
- the light intensity distribution on the Fourier transform plane including the diffracted light from the pattern is acquired as an image 3235 by the pupil plane observation system 310 (S3003).
- a Fourier transform plane image is acquired for a pattern portion where all diffracted light is desired to be shielded (S3004). If not acquired, the procedure from S3001 to S3003 is repeated.
- the power supply unit is based on the idea of shielding relatively strong diffracted light generated by the scattered light from the pattern regularly formed on the substrate 100.
- the individual shutters of the optical filtering device 2000 are controlled to set the light shielding region 3220 (S3005).
- the light shielding region 3220 is set based on the light intensity distribution on the Fourier transform plane obtained in S3003.
- the light shielding areas obtained by repeating this procedure are merged to obtain a temporary light shielding area 3020.
- a preset ratio S3006
- FIG. 31 is an image diagram of the arrangement of a die having the semiconductor wafer 100.
- a similar pattern is repeatedly created with the pitch (px, py), but if there is a place where a similar pattern is created with a finer repetition cycle depending on the region (3101), a finer repeat pattern of more than that is created.
- the patterns in the emission direction of the diffracted light emitted to these pattern areas are different from each other, the intensity distribution of the diffracted light from the area 3101 becomes 3235, and the intensity distribution of the diffracted light from the area 3102 becomes 3235 '. Therefore, the necessary light shielding pattern is different.
- FIG. 32A shows an initial state on a GUI screen 9350 for setting a light shielding area.
- the intensity distributions 9351 and 9351 ′ of the diffracted light on the pupil plane from a plurality of preset pattern areas are displayed so as to overlap the light shielding area of the spatial filter.
- the light shielding threshold value is set by moving the slide bar 9352 or 9352 ′ or inputting a numerical value into the window 9353 or 9353 ′.
- a pixel of the spatial filter including a pixel whose brightness value is larger than the light shielding threshold value is automatically designated as a light shielding region. In the case of FIG.
- the slide bars 9352 and 9352 ′ show the case where the light-shielding brightness value at the right end is the maximum, and shows a state where there is substantially no light-shielding region due to the spatial filter.
- the area 9354 the light shielding area of the entire semiconductor wafer 100 is displayed.
- the light shielding threshold is adjusted by moving the slide bar 9352 or 9352 'or inputting a numerical value in the window 9353 or 9353'.
- the shielded region is displayed so as to overlap with the intensity distribution of the diffracted light on the pupil plane as in regions 9361 and 9361 ′ shown in FIG. 32B.
- the filling is turned ON / OFF. It is also possible to set the light shielding ON / OFF of each pixel by this method.
- a light shielding area obtained by merging the light shielding areas 9361 and 9361 ′ set for each diffracted light intensity distribution over the entire semiconductor wafer 100 is displayed in the area 9354. If the light shielding area becomes too large, there is a fatal effect on the defect detection sensitivity.
- the results of simulation calculation of the inspection image of the PSL sphere that is the standard defect when the currently set light-shielding region is applied to the inspection may be shown in regions 9355 and 9356.
- the calculation is performed by a method similar to the method described in FIG.
- FIG. 33 shows an operation flow when the surface of the substrate to be inspected is illuminated with a sheet beam and an inspection image on the surface of the substrate is detected using a TDI sensor.
- the substrate 100 is loaded on the inspection apparatus 1, and the substrate 100 is fixed by the wafer chuck 34 (S3301).
- wafer alignment is performed using the alignment mark 108 (see FIG. 20A) on the substrate 100, and an offset 2101 (see FIG. 20B) and an inclination 2102 between the coordinates on the substrate 100 and the coordinates of the substrate scanning system are measured. (S3302). If the tilt angle 2102 is larger than the preset angle threshold value, the ⁇ stage 26 is rotated in the opposite direction by the tilt 2102 so that the tilt becomes almost zero, and then the substrate alignment is performed again. The offset 2101 between the coordinates on the substrate 100 and the coordinates of the substrate scanning system is measured again.
- the optical filtering device 2000 is controlled to shield a preset area (S3303).
- the X stage 21 is scanned (S3304).
- the X stage 21 is moved at substantially constant speed while the wafer 100 is irradiated with the sheet beam 198.
- the shutter 13 of the light source 11 is opened and illumination by the sheet beam 198 is performed (S3305).
- the optical sensor (TDI sensor) 35 is operated in synchronization with the scanning of the X stage 21, and the surface image of the substrate 100 is collectively acquired (S3306).
- a light-shielding region is set using a two-dimensional spatial filter system 32 according to this embodiment, in which diffracted light from a pattern formed in the vicinity of the surface of the substrate 100 is installed on the Fourier transform plane. The flow to perform will be described.
- the illumination conditions used for the inspection of the substrate 100 are set (S3401).
- the stage 100 is operated to move the substrate 100 so that the pattern portion that wants to shield the diffracted light enters the illumination light irradiation region (S3402).
- the light intensity distribution on the Fourier transform plane including the diffracted light from the pattern is acquired as an image 3235 (S3403).
- the acquired image is displayed in the areas 3211 and 3212 on the GUI screen 3200 as described with reference to FIG. 28A, and the slide bar displayed in the area 3214 on the area 3212 based on the concept of shielding strong diffracted light.
- the light shielding area of the optical filtering device 2000 is set by operating 9352 or inputting a numerical value from the numerical input window 9353 (S3404).
- the shutter once shifted to the latch closed state has a special application potential difference smaller than Vrel.
- the latch closed state is maintained.
- the positional relationship of the shutters to be in the latch closed state is the same as in the first row, the third row, the second row, and the fourth row from the left in FIG. 35A, the first row and the third row
- FIG. 36 shows an example of the diffracted light intensity distribution on the Fourier transform plane of the objective lens 31 when the memory cell portion and the logic portion of the semiconductor wafer (substrate 100) are irradiated with laser light.
- the Fourier transform image 3601 of the memory cell portion memory portion
- a place where strong diffracted light is generated repeatedly. Therefore, the light shielding for forming the light shielding pattern 3603 by the two-dimensional spatial filter by the speed-up method shown in this modified example.
- the effect of shortening the time for the transition of the in-region shutter from the closed state to the latch state becomes significant.
- the effect of speeding up the light shielding state transition by the method of this modification is remarkable in order to set a wide light shielding region vertically and horizontally by the light shielding pattern 3604 by the two-dimensional spatial filter.
- FIG. 37A and 37B show an embodiment of a user interface screen (GUI screen) 3700 for setting a light shielding area.
- GUI screen user interface screen
- the configuration of the GUI screen 3700 shown in FIG. 37A is the same as the configuration of the GUI screen 3200 described with reference to FIG. 28A.
- a plurality of light shielding area patterns can be set as shown in FIG. 37B. Therefore, a plurality of tabs 3711 are displayed.
- the light shielding area pattern stored in the storage means in each tab 3711 is set.
- the tab 3711 can be increased or decreased so that the number of light shielding area patterns can be increased or decreased.
- the setting method of each light shielding area is the same as the contents described in FIGS. 28A and 28B.
- GUI user interface screen
- FIG. 38A shows a die pattern and a scanning area of each scanning in the X direction by an interface screen (GUI) 3800.
- GUI interface screen
- the user sets the position of the notch side end of the scanning area for each scanning in the X direction according to the die area by moving the scanning position knobs 3812a to 38e up and down.
- the scanning area width of each of the knobs is set to a preset value (sensor size when the line sensor is projected onto the sample by the inspection optical system, etc.) Move so that the upper limit is determined).
- FIG. 38B shows an example in which the knob 3812c is moved. In this case, the positions of the knobs 3812a and 3812b are also moved in accordance with the movement.
- a light shielding state in each scanning time is selected.
- the light shielding state is set in advance using the user interface 3700 described with reference to FIGS. 37A and 37B. If it is desired to increase the light shielding state, the “filter” tabs 3812-1, 3812-2 and 3812-3 are added to the window by pressing a new filter button 3811.
- the increased shading area is set by displaying the interface of FIG. 37B by selecting a newly increased tab.
- FIG. 39 is an image diagram of an arrangement of a certain die 4000 on the semiconductor wafer (substrate) 100.
- Region A, region A ′, region B, and region C are repeatedly formed with substantially the same pattern in each region, and region A, A ′, B, and region C are divided by line L4001 along scanning direction 4010.
- a relatively large pattern such as a peripheral circuit or a logic pattern is formed in the regions A, A ′, and B, and a minute repetitive pattern such as a memory is formed in the region C.
- a minute repetitive pattern such as a memory is formed in the region C.
- FIG. 40 shows an example of a user interface screen (GUI) 4100 for setting the scanning position and the combination of the scanning position and the light shielding area.
- GUI user interface screen
- the die pattern and the scanning area for each scanning are shown.
- the user sets the position of the notch side end of the scanning area for each scanning time in accordance with the area of the die 4101 by moving the scanning position knobs 3812a to 38d up and down.
- the scanning area width of each of the knobs is set to a preset value (when the line sensor is projected onto the sample by the inspection optical system).
- the upper limit of (determined with reference to sensor size, etc.) becomes the upper limit.
- 3812b is adjusted so as to substantially coincide with the line L4001 that divides the regions A, A ', B and the region C described in FIG.
- a filter to be used at the time of scanning is selected by clicking the filter tab 4111 or 4112.
- the example shown in FIG. 40 shows an example in which the filter 1 is selected to be used during the area C scan, and the filter 2 is selected to be used during the areas A, A ′, and B scans.
- the user selects a light shielding state at each scanning time.
- the light shielding state is set in advance using the user interface screen (GUI) 3700 described with reference to FIG.
- GUI user interface screen
- the filter 2 when the filter 2 is set, the diffracted light patterns of the regions A / A ′ and the region B are measured, the light shielding regions are set for each, and the exclusive OR of the set light shielding regions is used. Set the entire shaded area.
- FIG. 41 shows an operation flow when the linear region 199 on the surface of the substrate to be inspected (substrate) 100 is illuminated with the sheet beam 198 and an inspection image on the surface of the substrate 100 is detected using the light beam difference (TDI sensor) 35. The modification of is shown.
- TDI sensor light beam difference
- the substrate 100 is loaded on the inspection apparatus 1, and the substrate 100 is fixed by the wafer chuck 34 (S5001).
- wafer alignment is performed using the alignment mark 108 on the substrate 100, and an offset 2101 and an inclination 2102 between the coordinates on the substrate 100 and the coordinates of the substrate scanning system are measured (S5002). If the inclination 2102 is larger than the preset angle threshold value 1309, the ⁇ stage 26 is rotated in the opposite direction by the inclination 2102 so that the inclination becomes almost zero, and then the substrate alignment is performed again.
- the offset 2101 between the coordinates on the substrate 100 and the coordinates of the substrate scanning system is measured again.
- the optical filtering device 2000 is controlled to shield a preset area (S5003).
- the X stage 21 is scanned (S5004).
- the X stage 21 is moved at substantially constant speed while the sheet beam 1310 is irradiated on the wafer. In a range where the illumination area of the sheet beam is on the wafer, the shutter 13 of the light source 11 is opened, and the sheet beam illumination is performed (S5005).
- the TDI sensor is operated in synchronization with the scanning of the X stage 21, and the surface image of the substrate 100 is acquired in a batch (S5006).
- the stage is moved in the Y direction by a preset distance (S5008).
- the optical filtering device 2000 is controlled to shield the preset area. (S5003).
- the stage When acquisition of the substrate surface image for one die in the Y direction is completed, the stage is moved in the vicinity of the position where the sensor position coincides with the lower end of the next die in the Y direction (S5009 '), and the X stage 21 is repeatedly scanned.
- the substrate 100 is unloaded when completed (S5011), and the operation as the inspection apparatus is completed. .
- FIG. 42 is a block diagram of the inspection apparatus 210.
- the same components as those in the inspection apparatus according to the first embodiment shown in FIG. 21A are given the same numbers.
- the illumination optical system 110 includes a laser light source 111 and a beam shaping lens 112, and a laser light source 11001 and a beam shaping lens 11002, and the light emitted from the laser light source 111 is changed to the lens 112. Or the light emitted from the laser light source 11001 is appropriately shaped by the lens 11002 to illuminate the substrate 100 to be inspected.
- the image processing system 2160 includes an adjacent die image position shift information calculation unit 2161 and a data processing unit 2162 that performs defect determination / detection processing using the die difference image.
- the adjacent die image position shift information calculation unit 2161 and the data processing unit 2162 each include a memory having a sufficient capacity for storing image data.
- the control / processing system 2180 includes at least a transport system control unit 81 for controlling the transport system 20, an illumination light source control unit 82, and a sensor control unit 2183 for acquiring an image from detection signals from the first detection optical system 30.
- a defect information processing unit 2184 that performs classification processing of defect information 611 output from the image processing system 2160, and a control unit 2189 that controls the whole are provided.
- 42 also shows a power supply unit 86 including a control circuit for the optical filtering device 2000.
- the interface system 2190 includes at least a data storage unit 2191 that stores defect information processed and output by the control / processing system 2180, an input unit 2192 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display unit 2193 for displaying processing information is provided.
- FIG. 43 shows a setting flow of substrate inspection conditions using the inspection apparatus according to the second embodiment.
- the operation is the same as the operation described in the first embodiment with reference to FIG. 23 until the substrate 100 is loaded into the apparatus and the alignment is adjusted (S306).
- One wavelength of the laser light source 110 or 11001 is selected as the illumination light source, and the substrate 100 is irradiated (S4321).
- the X table 21 or the Y table 22 is driven by the transport system control unit 81 so that a region where the optical filtering device 2000 has a pattern from which the diffracted light is to be removed enters a region irradiated with illumination light. Then, the substrate 100 is moved (S4307).
- the light shielding region 3220 (FIG. 28B) of the optical filtering device 2000 is determined while viewing the Fourier transform plane image 3235 (FIG. 28A) with the pupil plane observation system 310 (S4308).
- the light shielding region 3220 is set as a light shielding region at the time of inspection by adding the light shielding region determined by illuminating the substrate 100 with another wavelength and the light shielding region 3220 determined in the previous stage. To do.
- the procedures of S4321, S4307, and S4308 are repeated until the light shielding region 3220 is set for all wavelengths of illumination light used for the inspection sequentially.
- the substrate 100 is trial-inspected under the inspection conditions set by the above procedure (S4311), and if sufficient defect detection sensitivity is achieved, the substrate inspection condition setting is terminated (S4312). If the defect detection sensitivity is insufficient, the conditions set in accordance with the procedure from the setting of the illumination conditions (S4302) are corrected until sufficient defect detection sensitivity can be achieved.
- the substrate 100 to be inspected is usually formed with various repetitive patterns at different pitches.
- a bright spot 410 generated by scattered light from the first repetitive pattern formed on the substrate 100 generated in the field of view 400 of the detection optical system 30 on the Fourier transform plane of the objective lens 31, and this An arrangement of a light shielding pattern 420 conventionally used to shield the bright spot 410 is shown.
- reference numeral 402 in FIG. 44A shows a bright spot 430 generated by scattered light from the second repetitive pattern formed on the substrate 100 and a light-shielding pattern 420 conventionally used to shield the bright spot 410. Indicates placement.
- a bright spot 410 is generated in the field of view 400 of the detection optical system 30 on the Fourier transform plane of the objective lens 31, and the first repetitive pattern is generated. Since a bright spot 430 is generated when an area is inspected, a large number of light shielding patterns 420 must be arranged in accordance with the bright spot 410 and the bright spot 430 as shown by 403 in FIG. 44A. It was necessary to enlarge the shading area. As a result, the detection accuracy has been reduced.
- bright spots 410 and 430 are generated by causing the optical filtering device 2000 disposed on the Fourier transform plane of the objective lens 31 to generate a light shielding pattern as indicated by 2001-n in 405 of FIG. 44B. Therefore, it is possible to shield only a portion where the light is present, and it is possible to detect without reducing the amount of light incident on the optical sensor 35.
- the illumination conditions used for the inspection of the substrate 100 are set (S4501).
- the stage 100 is operated to move the substrate 100 so that the pattern portion to be shielded from diffracted light enters the illumination light irradiation region (S4502).
- a pupil plane image 3235 including diffracted light from the pattern is acquired (S4503).
- a light shielding region is set (S4504).
- it is checked whether the Fourier transform surface of the objective lens 31 is shielded from light exceeding a preset ratio (S4505). This is because if the light shielding area is enlarged, the resolution of the inspection image is lowered and the defect detection sensitivity tends to be lowered.
- the pupil plane distribution is actually measured by the pupil plane observation system 310 in a state where the spatial filter by the optical filtering device 2000 is set (S4506), and it is confirmed that the region where the strong diffracted light is incident is shielded. (S4507).
- the setting of the light shielding state using the optical filtering device 2000 is completed.
- the configuration of the illumination optical system is changed with respect to the first embodiment.
- the illumination optical system 10 ′ includes a lamp light source 17, a beam shaping lens 12, a beam splitter 15, an illumination stop 16, and an illumination stop control device 19.
- the wavelength selector 18 may be installed in the illumination optical path in order to increase the sensitivity of defect detection.
- FIG. 46 shows an embodiment in which the wavelength selector 18 is installed in the illumination optical path.
- An image of the lamp light source 17 is arranged so as to form an image at the position of the illumination stop 16 via the lens 12.
- the position of the illumination stop 16 is set on the Fourier transform plane of the objective lens via the beam splitter 15.
- the illumination optical system 10 ' is a Koehler illumination optical system.
- the detection optical system 2530 includes an objective lens 31, an optical filtering device 2000, an imaging lens 33, an optical sensor 35, and an A / D conversion unit 36.
- an integration type sensor TDI (Time Delay Integration) sensor
- a polarizing filter 34 may be installed between the imaging lens 33 and the optical sensor 35.
- FIG. 46 the block diagram including the polarization filter 34 is shown.
- the configuration of the pupil plane observation system 310 is omitted, the lenses 311 and 313 and the area are arranged so that the light intensity distribution on the Fourier transform plane of the objective lens can be observed in the same manner as described with reference to FIGS. 21A and 42.
- a sensor 315 is provided.
- Reference numeral 319 denotes a beam splitter composed of a half mirror. Of the scattered light from the substrate 100 illuminated by the illumination optical system 10, half of the light collected by the objective lens 31 and transmitted through the optical filtering device 2000 is transmitted. In addition to being guided in the direction of the image lens 33, half is reflected and guided in the direction of the pupil plane observation system 310.
- the image processing system 2560 includes an adjacent die image position shift information calculation unit 2561, and a data processing unit 2562 that performs defect determination / detection processing using the die difference image.
- the adjacent die image position deviation information calculation unit 2561 and the data processing unit 2562 each include a memory having a sufficient capacity for storing image data.
- the control / processing system 2580 includes at least a transport system control unit 81 for controlling the transport system 20, an illumination light source control unit 82, a sensor control unit 2583 for acquiring an image from a detection signal from the detection optical system 2530, and image processing.
- a defect information processing unit 2584 that performs classification processing of defect information 611 output from the system 2560 and a control unit 2589 that controls the whole are provided.
- a power supply unit 86 including a control circuit of the optical filtering device 2000 is also illustrated. The power supply unit 86 is connected to the control unit 2589, but the display thereof is omitted in FIG.
- the interface system 2590 includes at least a data storage unit 2591 that stores defect information processed and output by the control / processing system 2580, an input unit 2592 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display portion 2593 for displaying processing information is provided.
- the diffracted light distribution on the Fourier transform plane of the objective lens 31 is wider than that in the second embodiment.
- the lamp illumination light source has a distribution in the wavelength of the illumination light, and since the luminance is lower than that of the laser light source, it is often necessary to increase the illumination light amount by increasing the illumination ⁇ .
- a combination of linear filters at regular intervals as known in the art cannot provide sufficient performance for shielding unnecessary diffracted light, but a spatial filter using the optical filtering device 2000 in the present invention. If the system 32 is used, an arbitrary region can be shielded from light, so that the light can be shielded even if the diffracted light distribution is widened.
- the illumination conditions used for wafer inspection are set (S4501).
- one wavelength for which the light shielding pattern is not determined is selected from the wavelengths of illumination light used for inspection, and the substrate 100 is illuminated only by the wavelength (S4508).
- the stage system is operated so that the substrate 100 is moved so that the pattern portion to be shielded from the diffracted light enters the illumination light irradiation region (S4502).
- a pupil plane image 3235 including diffracted light from the pattern is acquired (S4503).
- a light shielding region is set (S4504).
- the inspection apparatus 2700 includes an illumination optical system 2710, a substrate transport system 2720, an upper detection optical system 2730, a first Fourier transform plane observation system 27310, an oblique detection optical system 40, a second Fourier transform plane observation system 410, and focus measurement.
- the system 50 includes a first image processing system 60, a second image processing system 70, a control processing system 2780, and an interface system 2790.
- the illumination optical system 2710 includes a laser light source 2711 and a beam shaping lens 2712. The light emitted from the laser light source 2711 is appropriately shaped by the lens 2712 to illuminate the inspected substrate 100. The same number is attached
- the substrate transport system 20 includes an X stage 21, a Y stage 22, a Z stage 23, a substrate chuck 24, and a ⁇ stage 25.
- the detection optical system 1: 2730 which is an upper detection optical system, includes an objective lens 31, an optical filtering device 2000, an imaging lens 33, an optical sensor 35, and an A / D conversion unit 36. Further, a polarizing filter 34 may be installed between the imaging lens 33 and the optical sensor 35.
- FIG. 48 shows a configuration including the polarization filter 34.
- An optical filtering device 2000 is installed on the Fourier transform surface of the objective lens 31.
- the first Fourier transform surface observation is performed so that the light intensity distribution on the Fourier transform surface and the light blocking state by the optical filtering device 2000 can be observed.
- a system 310 is installed.
- the first Fourier transform plane observation system 310 includes at least an optical element 319 for splitting light, lenses 311 and 313, and an area sensor 315.
- the detection optical system 2 2740 which is an oblique detection optical system is similar to the first detection optical system 2730, the objective lens 41, the optical filtering device 2400, the imaging lens 43, the optical sensor 45, and the A / D conversion unit 46. It has. Further, a polarizing filter 44 may be installed between the imaging lens 43 and the optical sensor 45. In FIG. 48, the block diagram including the polarization filter 44 is shown.
- the optical filtering device 2400 is installed on the Fourier transform surface of the objective lens 41.
- the second Fourier transform surface observation is performed so that the light intensity distribution on the Fourier transform surface and the light blocking state by the optical filtering device 2400 can be observed.
- a system 410 is installed.
- the second Fourier transform plane observation system 410 includes an optical element 419 for splitting light, lenses 411 and 413, and an area sensor 415.
- the focus measurement system 50 includes an illumination optical system 51, a detection optical system 52, an optical sensor 53, and a focus deviation calculation processing unit 54.
- the first image processing system 60 includes an adjacent die image position shift information calculation unit 61 and a data processing unit 62 that performs defect determination / detection processing using the die difference image.
- the second image processing system 70 includes an adjacent die image position shift information calculation unit 71 and a data processing unit 72 that performs defect determination / detection processing using the die difference image.
- the control / processing system 2780 includes at least a transport system control unit 2781 for controlling the transport system 2720, an illumination light source control unit 2782, a detection optical system 1: 2730 which is an upper detection optical system, and a detection optical system which is an oblique detection optical system.
- System 2 Merge processing and classification processing of defect information 600 and 601 output from sensor control unit 2783, first image processing system 60, and second image processing system 70 for acquiring images in synchronization with 2740 Are provided with a defect information processing unit 2784 and a control unit 2789 for controlling the whole.
- 48 also shows a power supply unit 86 including a control circuit of the optical filtering device 2000 and a power supply unit 87 including a control circuit of the optical filtering device 2400. (In FIG.
- the interface system 2790 includes at least a data storage unit 2791 that stores defect information processed and output by the control / processing system 2780, an input unit 2792 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display unit 2793 for displaying processing information is provided.
- the most different point from the first embodiment is that it has a detection optical system 2: 2740 which is an oblique detection optical system, a second Fourier transform plane observation optical system 410, and a second image processing system 70. is there.
- the light incident on the detection optical system 2: 2740 which is an oblique detection optical system, among the diffracted light from the repetitive pattern formed on the substrate 100 is condensed on the Fourier transform plane. Indicates.
- the Fourier transform in the detection optical system 1: 2730 which is an upper detection optical system installed in a direction substantially perpendicular to the surface of the substrate 100.
- the light intensity distribution on the surface is in the form of a vertical and horizontal grid, and the intersection of the grids is a bright spot, but the detection optical system 2: 2740, which is an oblique detection optical system, is greatly inclined from the vertical direction of the surface of the substrate 100.
- the optical intensity distribution in the field of view 400 on the Fourier transform plane in the detection optical system 2: 2740 is such that the bright spot 410 is unidirectional (see FIG. 4) as discussed in Japanese Patent Laid-Open No.
- 49A in the Y direction is a straight line, and in a direction perpendicular to it (the X direction in FIG. 49A), the lines are arranged on the lattice points of the curve.
- the filter 420 in the direction of arrangement of the linear grating, when the lattice spacing P X is narrow, the objective
- the light shielding area by the filter 420 at the opening of the lens 41 becomes large and the inspection cannot be performed substantially.
- the curve 401 does not have a large curve (curvature is large), and can be shielded by the horizontal filter 420 ′.
- the width of the filter 420 ′ is not sufficient as shown in FIG. 49B, it is difficult to shield all the bright spots.
- the optical filtering method using the spatial filtering device 2000 of the present development only the bright spot portion can be shielded as shown in FIG. 49C, so that the region for shielding the aperture of the objective lens 41 is narrow. It becomes possible to shield a desired bright spot in the state.
- FIG. 50 shows a fifth embodiment in which an optical filtering device using a micro shutter array according to the present invention is applied to a dark field inspection apparatus.
- the configuration of the detection optical system 2930 is different from that of the first embodiment.
- the scattered light from the surface of the substrate 1 that has passed through the relay lens 33 is separated into two polarization components by using a polarization beam splitter 37 and is imaged on the sensor 35 and the sensor 38, respectively.
- Data obtained by digitally converting the obtained light intensity distribution by the A / D conversion units 36 and 39 is processed by the image processing unit 2960.
- the outputs of the sensors 35 and 38 are appropriately used. To determine if there is a defect.
- the image processing system 2960 includes an adjacent inter-die image positional deviation information calculation unit 2961 and a data processing unit 2962 that performs defect determination / detection processing using the inter-die difference image.
- Each of adjacent die image position deviation information calculation unit 2961 and data processing unit 2962 includes a memory having a sufficient capacity for storing image data.
- the control / processing system 2980 includes at least a transport system control unit 81 for controlling the transport system 20, an illumination light source control unit 82, a sensor control unit 2983 for acquiring an image from a detection signal from the detection optical system 2930, and image processing.
- a defect information processing unit 2984 that performs classification processing of defect information 611 output from the system 2960, and a control unit 2989 that controls the whole are provided.
- 50 also shows the power supply unit 86 including the control circuit of the optical filtering device 2000. The power supply unit 86 is connected to the control unit 2989, but the display thereof is omitted in FIG.
- the interface system 2990 includes at least a data storage unit 2991 that stores defect information processed and output by the control / processing system 2980, an input unit 2992 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display unit 2993 for displaying processing information is provided.
- FIG. 51 shows a sixth embodiment in which an optical filtering device using a micro shutter array according to the present invention is applied to a dark field inspection apparatus.
- light emitted from a plurality of light sources 11a and 11b included in the illumination optical system 3010 is once passed through a substantially identical optical path using a beam splitter 11c, and then irradiated onto the substrate 100. It is.
- the image processing system 3060 includes an adjacent die image position shift information calculation unit 3061 and a data processing unit 3062 that performs defect determination / detection processing using the die difference image.
- the adjacent die inter-image image misalignment information calculation unit 3061 and the data processing unit 3062 each include a memory having a sufficient capacity for storing image data.
- the control / processing system 3080 includes at least a transport system control unit 81 for controlling the transport system 20, an illumination light source control unit 3082, a sensor control unit 3083 for acquiring an image from a detection signal from the detection optical system 30, and image processing.
- a defect information processing unit 3084 that performs classification processing of defect information 611 output from the system 3060 and a control unit 3089 that controls the whole are provided.
- 51 also shows a power supply unit 86 including a control circuit of the optical filtering device 2000. The power supply unit 86 is connected to the control unit 3089, but the display thereof is omitted in FIG.
- the interface system 3090 includes at least a data storage unit 3091 that stores defect information processed and output by the control / processing system 3080, an input unit 3092 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display unit 3093 for displaying processing information is provided.
- FIG. 52 shows a seventh embodiment in which an optical filtering device using a micro shutter array according to the present invention is applied to a dark field inspection apparatus.
- the spatial filter 32 in which the magnification observation system 3210 is incorporated into the optical filtering device 2000 is used.
- the expanded Fourier transform plane observation system 3100 includes a light source 329 and a beam splitter 328 in addition to the Fourier transform plane observation system 310 of the first embodiment.
- the light emitted from the light source 329 is bent by the beam splitter 328 disposed so as to pass through a path substantially coincident with the optical axis of the Fourier transform plane observation system of the detection optical system 3130, and the lenses 311,
- the optical filtering device 2000 is illuminated through the beam splitter 319. If the reflected light 3214 from the focused shutter 2001 reaches the camera 315 and looks bright, the shutter 2001 is closed, and if there is no reflected light and looks dark, the shutter 2001 is determined to be open.
- the directly reflected light is 2 ⁇ different from the portion other than the shutter. Since the light is reflected in a direction shifted by ⁇ max, a lens having a sufficiently large aperture needs to be used as the lens 311 so that the reflected light also enters the lens 311. Note that when the opening of the lens 311 is small and the reflected light from the shutter in the latched closed state does not enter the lens, the shutter 2001 appears to be completely dark and cannot be distinguished from the opened state.
- the substrate 100 is scanned in the flowchart shown in FIG. 22 (S2204), and an optical image near the surface of the substrate 100 is displayed. (S2205), the illumination 329 is preferably turned off or shielded so that the optical filtering device 2000 is not exposed to illumination light.
- the image processing system 3160 includes an adjacent die image position shift information calculation unit 3161 and a data processing unit 3162 that performs defect determination / detection processing using the die difference image.
- the adjacent die image position shift information calculation unit 3161 and the data processing unit 3162 each include a memory having a sufficient capacity for storing image data.
- the control / processing system 3180 includes at least a transport system control unit 81 for controlling the transport system 20, an illumination light source control unit 82, a sensor control unit 3183 for acquiring an image from a detection signal from the detection optical system 3130, and image processing.
- a defect information processing unit 3184 that performs classification processing of defect information 611 output from the system 3160 and a control unit 3189 that controls the whole are provided.
- the power supply unit 86 including the control circuit of the optical filtering device 2000 is also illustrated. The power supply unit 86 is connected to the control unit 3089.
- the interface system 3190 includes at least a data storage unit 3191 that stores defect information processed and output by the control / processing system 3180, an input unit 3192 that performs inspection condition setting and control processing information input, and displays and controls defect information.
- a display unit 3193 for displaying processing information is provided.
- FIGS. 53A and 53B An eighth embodiment in which an optical filtering device using a micro shutter array according to the present invention is applied to a dark field inspection apparatus will be described with reference to FIGS. 53A and 53B.
- the dark field inspection apparatus includes an illumination unit 4100, a detection unit 4200 (4200a to 4200f), a stage 4300 on which a sample 4001 can be placed, a signal processing unit 4500, and an overall control unit 4600.
- the display unit 4700 and the input unit 4800 are used as appropriate.
- the signal processing unit 4500 includes a defect determination unit 4510, a feature amount extraction unit 4520, and a defect type / dimension determination unit 4530.
- the regular reflection detection unit 4290 is installed as necessary for the purpose of large area defect inspection or sample surface measurement.
- the illumination unit 4100 includes a laser light source 4101, an attenuator 4102, a polarization element 4103, a beam expander 4104, an illuminance distribution control element 4105, a reflection mirror 4106, and a condenser lens 4107 as appropriate.
- the laser light emitted from the laser light source 4101 is adjusted in intensity by the attenuator 4102, the polarization state by the polarizing element 4103, and the intensity distribution in the illumination light beam by the illuminance distribution control element 4105, and condensed by the reflecting mirror 4106.
- the lens 4107 the light is condensed near the surface of the sample 4001 and irradiated on the surface of the sample.
- the stage 4300 includes a translation stage 4310, a rotation stage 4320, a Z stage 4330, and a substrate support mechanism 4340.
- FIG. 59 shows the relationship between the illumination region (illumination spot 4020) of the sample 4001 and the scanning direction due to the movement of the rotary stage 4320 and the translation stage 4310, and the locus of the illumination spot 4020 drawn on the sample 4001 thereby. .
- the illumination spot 4020 is scanned in the circumferential direction D1 of the circle around the rotation axis of the rotary stage 4320 by the rotary motion of the rotary stage 4320, and in the translation direction D2 of the translation stage 4310 by the translational motion of the translation stage 4310.
- the illumination unit 4100 is configured such that the longitudinal direction of the illumination spot 4020 is parallel to the scanning direction D2, and the illumination spot 4020 passes through the rotation axis of the rotary stage 4310 by scanning in the scanning direction D2.
- the Z stage is moved so that the surface of the sample 4001 is at an appropriate position.
- the illumination spot 4020 scans in the scanning direction D2 for a distance equal to or less than the length in the longitudinal direction of the illumination spot 4020. T is drawn and the entire surface of the sample 4001 is scanned.
- the detection unit 4200 includes a plurality of detection units 4200a to 4200f as shown in FIG. 53B, and collects and detects scattered light scattered on the surface of the sample 4001 and propagating in different azimuth and elevation directions. Configured as follows.
- the detection unit 4200a is configured by appropriately using a condensing system 4210a, a two-dimensional spatial filter system 32a, a polarizing filter 4220a, and a sensor 4230a.
- An image of the illumination spot 4020 is formed on the light receiving surface of the sensor 4230a or in the vicinity thereof by the condensing system 4210a.
- the polarizing filter 4220a can be inserted into and removed from the optical axis of the light condensing system 4210a.
- a photomultiplier tube, an avalanche photodiode, a semiconductor photodetector imaged with an image intensifier, or the like is appropriately used.
- the scattered light signal detected by the detection unit 4200 is transmitted to the signal processing unit 4500 after being subjected to processing such as A / D conversion.
- the defect determination unit 4510 determines the location of the defect. For a portion determined to be a defect, a feature amount is extracted by a feature amount extraction unit 4520, and the feature amount is sent to a defect type / dimension determination unit 4530 to determine the defect type and size.
- the determination result is sent to the overall control unit 4600 and output from the display unit 4700 in a form that can be confirmed by the apparatus operator.
- FIG. 54A to 54D show images showing how the distribution 4003 of scattered light due to surface roughness of the sample 4001 becomes when the sample 1 is irradiated with the illumination 1.
- FIG. The illumination light 1 is scattered in various directions according to the spatial frequency of the rough surface that contributed to the light scattering.
- Light scattered by the component having a high spatial frequency of the sample 4001 as shown in FIG. 54A is scattered in a direction close to the direct reflection direction of the illumination light 1 (FIG. 43B), and the spatial frequency as shown in FIG. 54C is obtained.
- the light scattered by the low component is scattered in a direction close to the incident direction of the illumination light 1 (FIG. 43D).
- the degree of surface roughness is caused by the process of wafer manufacture or wafer reclamation, for example, it may be considered that the same lot hardly changes. If the degree of surface roughness does not change, the scattering direction of scattered light caused by surface roughness does not change.
- the scattering direction of the surface roughness-caused scattered light is acquired in advance, and the surface rough-caused scattering light is shielded using the optical filtering device 2000 of the present invention, so that foreign substances or substrates on the substrate surface can be obtained. It can detect surface defects with high sensitivity.
- stage drive driver 4610 and the drive circuits 4250a to 4250f of the spatial filters 32a to 32f can dynamically change the light shielding region in synchronization with the output of the rotation angle output unit 4322 of the rotary stage 4320.
- a signal line 4650 is added to the spatial filter drive circuit control system 4660.
- FIG. 57 shows a setting flow of substrate inspection conditions using the inspection apparatus according to the present invention.
- illumination conditions such as illumination angle (azimuth and elevation angle) and illumination polarization are set (S5701).
- Detection optical conditions optical magnification, presence / absence of light detection, etc.
- Defect processing parameters are set (S5703). If the wafer 100 to be inspected has not been loaded on the apparatus, the wafer 100 is loaded (S5705), and alignment is performed using a notch or orientation flat (S5706). The wafer is moved so that the region including the terrace on the epi-wafer enters the illumination light irradiation region (S5707).
- the terrace direction 7451 is shifted from the horizontal direction of the wafer by about 5 to 15 °. It is known that this shift differs depending on the crystal growth method.
- This value is input (S5704).
- the stage angle is obtained (S5708), and the light diffracted on the terrace on the epi-wafer is detected while scanning the wafer in the direction D2 shown in FIG.
- a sensor is specified (S5709), and it is confirmed whether there is a contradiction in the relationship between the terrace angle 7451, the stage angle, the illumination direction, and the sensor having the maximum detected light amount (S5710). If there is a contradiction, the setting of the optical system or the input value of the terrace angle is incorrect, and the process returns to step S4601.
- the wafer is tested for trial inspection under the inspection conditions set above (S5711), and if it is confirmed that the diffracted light from the terrace is reduced (S5712), the substrate inspection condition setting is completed.
- the set condition is corrected by returning to the setting of the illumination condition (S5701).
- FIG. 58 shows a flowchart of the substrate inspection process using the inspection apparatus according to the second embodiment of the present invention.
- the substrate 100 is loaded onto the inspection apparatus 1 (S5801) and is held by the substrate chuck 24.
- the inspection apparatus 1 performs alignment of the substrate 100 (S5802), and acquires the coordinates of the notch 195 on the aligned substrate 100 (S5803), thereby determining the angle formed between the angle of the substrate 100 and the reference direction of the rotary stage. Detect.
- FIG. 59 shows the relationship between the illumination area (illumination spot 4020) on the sample 4001, the scanning direction due to the movement of the rotary stage 4320 and the translation stage 4310, and the locus of the illumination spot 4020 drawn on the sample 4001 thereby. .
- the illumination spot 4020 is scanned in the circumferential direction D1 of the circle around the rotation axis of the rotary stage 4320 by the rotary motion of the rotary stage 4320, and in the translation direction D2 of the translation stage 4310 by the translational motion of the translation stage 4310.
- the illumination unit 4100 is configured so that the longitudinal direction of the illumination spot 4020 is parallel to the scanning direction D2, and the illumination spot 4020 passes through the rotation axis of the rotary stage 4310 by scanning in the scanning direction D2.
- the Z stage is moved so that the surface of the sample 4001 is at an appropriate position.
- the illumination spot 4020 scans in the scanning direction D2 for a distance equal to or less than the length in the longitudinal direction of the illumination spot 4020. T is drawn and the entire surface of the sample 4001 is scanned.
- the present invention is not limited to the above embodiments, and includes various modifications. For example, it is possible to replace part of the configuration of an embodiment that does not deviate from the gist thereof with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of a certain embodiment. Is possible. Further, it is possible to add, delete, and replace other known configurations for a part of the configuration of each embodiment.
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Abstract
Description
(1):一方向に電気的に接続されたMEMSシャッタアレイ、
(2):(1)とは直行する方向に導通する状態で形成された配線パターンを持つガラス基板、
(3):(1)と(2)を位置合わせして固着する手段
(4):(1)を駆動するための制御電源ハードウェア
(5):(4)の動作を制御する手順。
なお、以下の特徴を備えていることが望ましい。
(6):(1)が内側となりかつ光が透過可能なように組合せられた透明基板と枠、
(7):(2)と(6)を外壁として(1)を密閉し内部から湿気を除去する手順。
(A): レーザ等の光源、及び照明光学系、
(B): 被検査サンプルからの回折光分布を測定可能なフーリエ空間面の観測光学系
(C): 任意の領域を遮光可能で遮光比率の高い、MEMSシャッタアレイを応用した空間フィルタリングデバイス、
(D):(B)及び(C)を持つ散乱光を検出するための1つまたは複数の欠陥検出光学系及び光検出器、
(E):(D)を用いて被検査サンプル表面近傍に存在する欠陥を検出するための画像処理系。
図2Aの点線2010で囲んだ領域は、単一のマイクロシャッタを表わす。単一のマイクロシャッタ2010は、光学的に不透明なシャッタ2001、動作電極2002、サスペンション2003、開口2004を備えて構成されるが、配線パターン付きガラス基板2020のシャッタ2001の側に形成された配線パターン2021のシャッタ2001近傍部分、及び、配線パターン付きガラス基板2020のシャッタ2001と反対の側に形成された遮光パターン2022のシャッタ2001近傍部分も単一のマイクロシャッタ2010の動作に寄与するため、以下の説明ではこれらも合わせて説明する。
リソグラフィやエッチング技術などのMEMS工程にてSOIウェハを加工することで、マイクロシャッタアレイ2010を作製する(S2201)。また、リソグラフィやエッチング技術などのMEMS工程、もしくは塗布などの手法により、図2Dに示すように、配線パターン付きガラス基板2020の上面に遮光パターン2022を下面に配線パターン2021、2023を、それぞれ形成する(S2202)。このとき漏れ光発生を避けるため、配線パターン付きガラス基板2010の下面に形成される配線パターン2021のパターン凹み部分2027と、上面に形成される遮光パターン2022の形成される位置がほぼ合うように形成する。次に、SOIウェハ上に形成したマイクロシャッタアレイ2100と配線パターン付ガラス基板2020を、位置合わせをした上で電気的に接続すると共に接着する(S2203)。更に、電気供給部材2080に接続された配線をパターン付ガラス基板2020上の配線パターン2021、2023に、それぞれ接続する(S2204)。
SOIウェハを用いてシャッタ2001として用いる部分とサスペンション2003を作製するには、SOIウェハ上のSOI部にエッチングやレーザ加工又はEB(Electron Beam)加工によって図2B及び図2Cに示すような切り込み部2006及び2007を形成することが必須であるが、図2Bのようにシャッタ2001が閉じた状態であっても、この切り込み部を通って光が透過してしまう。この切り込み部2006及び2007を透過した光がそのまま光学フィルタリングデバイス2000から出力されてしまうと、ノイズとなり光学フィルタリングデバイス2000の性能を低下させる原因となってしまう。
配線パターン付ガラス2020のマイクロシャッタアレイ2100が搭載される側の面には、SOI部2016に形成されたシャッタ2001を動作させるための2系統の電力を供給する配線パターン2021、2023とが形成されており、マイクロシャッタアレイ2100が搭載されている側と反対側の面には通電を伴わない遮光パターン2022が形成されている。図4は、配線パターン付きガラス基板2020のマイクロシャッタアレイ2100が搭載されている側の面を示しており、反対側の面に形成された遮光パターン2022は示されていない。
光学フィルタリングデバイス2000は、基本的には、図2Aで説明した単一のシャッタ2010が、XY方向格子状に配列している。図5Cは、SOIウェハ201上に形成されたマイクロシャッタ2010の平面図である。図5Aは、光学フィルタリングデバイス2000に搭載した図5Cのマイクロシャッタ2010に対して、図5CのA-A’断面から見た図、図5Bは、図5CのB-B’断面から見た図を示す。
このうち、本実施例と同様に光透過型の光学デバイスとして利用可能な発明は、上記バックライト型に相当する。金属電極としてITOを用いており、可視光を透過させるデバイスとして機能することが想定される。
一方本実施例のシャッタは、先端に突起を付加している。これにより、接触する領域を突起部分に限定している。また、突起部分を小さく形成することで、突起部分がガラス基板に接触しても大きな反りは生じない構造になっている。すなわち、特許文献7に記載されている発明と本実施例の発明では、デバイスの立体構造が異なっている。
図5A及び図5Bに関する実施例の説明において、ガラス基板2020とSOI部分2016の間隔は15乃至35μm程度に制御されているとしたが、このように非常に近接した場所に電位の異なる導電部(配線、シャッタ等)が設置されているため、ガラス基板2020上もしくはシャッタアレイ2100上の導電部に高い電圧をかけると、これらが乾燥空気にて封止されていたとしても、絶縁破壊が起こって放電し、導電部にダメージを生じる可能性がある。一般的に乾燥空気の絶縁破壊の目安電界強度は3kV/mm程度とされている。すなわち、ガラス基板2020とSOI部分2016の間隔は好ましくは20~25μm程度であるから、ガラス2020上の配線パターン2021,2023とシャッタ2001との電位差が60~75Vを超えると絶縁破壊が生じる可能性がある。従って、ガラス基板2020上の配線パターン2021,2023とシャッタ2001との電位差の絶対値|ΔV2|は、60V以下となることが安全性を考慮した運用上、必須である。
まず、図6Aの左側のようにシャッタ2001が閉じた状態(初期状態)で酸化絶縁膜2014で、電気的に絶縁された状態で接続しているシャッタ2001と動作電極2002の間に電位差ΔVを与えると、電位差ΔVを動作電極2002とシャッタ2001との平均間隔d(図6C参照)で割った電界強度の絶対値|ΔV/d|の自乗に比例した静電引力2107が両者に働く。このとき、動作電極2002とシャッタ2001の電位は、どちらかが必ずしも接地電位でなくてもよく、相対的に上記した電位差を発生させればよい。この力の強さに応じてサスペンション2003がねじれ、図6Aの右側のようにシャッタ2001が開く。このとき、シャッタ閉(図6Aの左側:初期状態)→開(図6Aの右側)の動作を開始した時点よりもシャッタ2001と動作電極2002の間隔d’が狭くなるため、電界強度の絶対値|ΔV/d’|はシャッタ2001が閉じた状態の時に働く引力2107よりも大きくなる。
以上がシャッタ2001の開閉のサイクルである。
図6Bのグラフで、横軸はシャッタ2001-動作電極2002間の電位差ΔV、縦軸をサスペンション2003のねじれ角Δθとする。Δθがほぼ0であればシャッタ2001は閉状態、Δθがほぼ90であればシャッタ2001の開状態を示す。
まず、図7Aの左側に示したような状態(初期状態)で、シャッタ2001と配線パターン付ガラス基板2020上の動作配線パターン2021の間に電位差ΔV2を与えると、電位差ΔV2を間隔d2´(図7Cの左側の閉状態の図を参照)で割った電界強度の絶対値|ΔV2/d2´|の自乗に応じた静電引力2207が両者に働く。この力の強さに応じてサスペンション2003がねじれ、シャッタ2001が配線パターン付ガラス基板2020の方向に回転する。この回転の最大角Δθmaxは、シャッタ2001の突起部2008が配線パターン付ガラス基板2020にほぼ接触する角度である。ほぼΔθmaxまで回転した状態を、以下ラッチ閉状態と記す。
図7Bのグラフの横軸はシャッタ2001-配線パターン2021間の電位差ΔV2、縦軸をサスペンション2003のねじれ角Δθ2とする。但し、回転方向は図6Aの場合とは逆方向である。
まず、図8Aに示すように、着目したシャッタ2001が閉状態(図8FのS802)であれば、図6A及び図6Bで説明したように動作電極2002に電位差ΔVを付加することによって、図8Bに示すようにシャッタを2001を開くことができる(ラッチ開状態:図8FのS703’)。但し、シャッタ2001と配線パターン付ガラス基板2020上の配線パターン(電極)2021との間にΔV=Vitmdだけ電位差が発生しているため、シャッタ2001自体には図6A乃至図6Cにて説明したシャッタ2001を開こうとする力の他に、図7A乃至図7Cにて説明したシャッタ2001をガラス基板側に引き付けようとする力がかかっている。このため、シャッタ2001を開くための電位差ΔVは、図8Fに示すようにVopenよりも大きいV’openだけ必要である。
以上が、シャッタ開閉動作サイクルのうちのシャッタ閉動作サイクル時に配線パターン付ガラス基板2020上の配線パターン2021,2023、及びシャッタ2001に印加する電圧値の実施例である。
シャッタ列5231~5234、及び配線列5211~5213は、それぞれスイッチ5311~5313、及び5331~5334に電気的に接続されている。スイッチ5311~5313は信号線5303及び5304を、スイッチ5331~5334は信号線5301及び5302を、それぞれ切り替えることができるようになっている。
まず時間0からt0までの間、スイッチ5311~5313及び5331~5334を、表の中央の列1401に示された信号線と接続するように切り替える。同様に、時間t0から2×t0までの間、スイッチ5311~5313及び5331~5334は、表の右側の列に示された信号線と接続するように切り替える。これによって、所望のシャッタ5238全てが、ラッチ閉の状態となる。
シャッタ列5231~5234、及び配線列5211~5213は、それぞれスイッチ5341~5343、及び5351~5354に電気的に接続されている。スイッチ5341~5343は信号線5323及び5324を、スイッチ5351~5354は信号線5321、5322、及び5324を、それぞれ切り替えることができるようになっている。信号線5321~5324には、周期t0で図15Bに示すように一定電圧が信号として流れされている。図中のVA1、VA2、VB1、VB2の電位は、図14Bで説明したのと同様、Vrel<|VB1-VA1|<Vlatch、Vrel<|VB2-VA1|<Vlatch、Vrel<|VB1-VA2|<Vlatch、|VB2-VA2|>Vlatchを満たすように選択する。
本発明の光学フィルタリングデバイス2000では、シャッタ2001が配線パターン付ガラス基板2020に吸着したり破損したりしても、動作電極2002や配線パターン2021と接触してショートが発生しない限り、所望の電圧を印加することが可能である。すなわち、印加電圧を監視しているだけではシャッタ2001の開閉状態を管理することができない。
そこで、光学フィルタリングデバイス2000とシャッタの開閉状態を確認するための拡大観察系3210とを備える2次元空間フィルタシステム32を構成する(図16A参照)。
以上により、シャッタが動作し、かつシャッタ列に印加する電圧を選択する。
検査装置1は、照明光学系10、基板搬送系20、検出光学系30、フォーカス測定系50、画像処理系60、制御処理系80、インターフェース系90、瞳面観測系310を備えて構成されている。
基板100が検査装置1にロードされ(S2201)基板チャック24で保持される。検査装置1はアライメント動作することにより(S2202)、基板100の傾きをなくすと同時に、ウェハ原点座標190(図20A参照)を求める(S2203)。
本発明に関わる検査装置を用いた基板検査条件の設定フローを図23に示す。
まず被検査ウェハ(基板100)のダイサイズや配列等の基本的な設計情報を入力部92から入力する(S2301)。次に、照明角度(方位、仰角)や照明偏光などの照明条件を入力部92から入力して設定する(S2302)。更に、空間フィルタ設定以外の検出光学条件(光学倍率、検光の有無等)を入力部92から入力して設定し(S2303)、欠陥処理パラメータを設定する(S2304)。
図28Aは初期状態である。GUI画面3200上には、予め設定したパターン領域からの瞳面における回折光の強度分布3235を表示する領域3211と、回折光の強度分布3235を空間フィルタリングデバイス(空間フィルタ)2000の遮光領域3220と重ねて表示する領域3212、及びフィルタリング後の強度分布3235´を表示する領域3213とがある。更に、回折光強度に対する遮光しきい値を設定する領域3214として、スライドバー9352と数値入力用の窓9353が表示される。各回折光強度分布に対し、スライドバー9352を動かすか、もしくは窓9353に数値を入力することにより、遮光しきい値を設定する。
一方、スライドバー9352又は9352´を動かすか、もしくは窓9353又は9353´に数値を入力することにより、遮光しきい値を調整すると、遮光された領域は、図32Bに示す領域9361及び9361´のように瞳面における回折光の強度分布と重ねて表示される。
なお遮光領域については、マウス等のポインティングデバイスを用いて、所望の空間フィルタのピクセルをクリックすると、塗りつぶしがON/OFFする。この方法によって各ピクセルの遮光ON/OFFを設定することも可能である。
図38Bではツマミ3812cを移動させた例を示しているが、この場合はその移動に伴ってツマミ3812a、3812bの位置も移動する。続いて、各走査回における遮光状態を選択する。遮光状態は図37A及び図37Bで説明したユーザインタフェース3700を用いて予め設定しておく。なお遮光状態を増やしたい場合には、新規フィルタボタン3811を押すことにより、ウィンドウに「フィルタ」タブ3812-1,3812-2,3812-3が増える。増えた遮光領域の設定は、新たに増えたタブを選択することで図37Bのインタフェースを表示させ、その中で設定する。
領域Aと領域A’、領域B、領域Cは、それぞれの領域内にほぼ同様なパターンが繰り返し形成され、領域A、A’、Bと領域Cは走査方向4010に沿った線L4001にて分割されている。領域A、A’、Bには周辺回路やロジックパターンなどの比較的大きなパターンが形成され、領域Cには、メモリなどの微細な繰り返しパターンが形成されている。本実施例では、ダイ4000の領域を分けて、各領域からの対物レンズ31のフーリエ変換面における回折光パターン形状に応じた遮光パターンを設定しておくことで、高感度に欠陥検出する例を説明する。
以下、順次検査に使用する照明光の全ての波長について遮光領域3220の設定するまでS4321、S4307、S4308の手順を繰り返す。
次に図45を用いて、基板100に形成されたパターンからの回折光を、対物レンズ31の瞳面上に設置された光学フィルタリングデバイス2000を用いて遮光する実施例の変形例について説明する。
瞳面観測系310の構成は省略しているが、図21A及び図42で説明したのと同様に、対物レンズのフーリエ変換面上の光強度分布を観測できるように、レンズ311及び313、エリアセンサ315を備えている。
照明光学系2710は、レーザ光源2711とビーム整形用のレンズ2712とを備え、レーザ光源2711から出射された光をレンズ2712にて適宜整形して、被検査基板100を照明する。実施例1で図21Aに示した暗視野検査装置1と同じ構成に対しては同じ番号を付している。
インターフェース系2790は、少なくとも制御・処理系2780にて処理・出力された欠陥情報を蓄積するデータ蓄積部2791、検査条件設定や制御処理情報入力を実施する入力部2792、欠陥情報を表示したり制御処理情報を表示する表示部2793を備えている。
本実施例は、照明光学系3010が備える複数の光源11a、11bから出射した光を一旦ビームスプリッタ11cを用いてほぼ同一の光学経路を通るようにした後、基板100を照射するようにしたものである。
検出部4200aは、集光系4210a、2次元空間フィルタシステム32a、偏光フィルタ4220a、及びセンサ4230aを適宜用いて構成される。集光系4210aにより照明スポット4020の像が、センサ4230aの受光面もしくはその近傍に結像される。この際、 2次元空間フィルタシステム32aを用いて、所望の方向へ散乱された光を遮光することが可能である。偏光フィルタ4220aは、集光系4210aの光軸上への挿入・取出が可能となっている。センサ4230aには、光電子増倍管、アバランシェホトダイオード、イメージインテンシファイアと結像した半導体光検出器等を適宜用いる。
このため、シリコンエピウェハに白色の照明を照射した場合には、ウェハが虹色に見えることが知られている。この現象と同じ原因により、レーザ光をシリコンエピウェハに照明した場合には、照明光のウェハ表面からの直接反射方向から、テラスの並び方向に向かって、強い散乱光が発生することが知られている。すなわち、シリコンエピウェハにレーザ光を照射しつつウェハを回転させると、ウェハの向きに応じて強い散乱光が出る方向が変化する。しかしながら、シリコンエピウェハにおいてはテラスは欠陥ではないため、欠陥として検出したくないという強いニーズがある。
まず照明角度(方位、仰角)や照明偏光などの照明条件を設定する(S5701)。空間フィルタ設定以外の検出光学条件(光学倍率、検光の有無等)を設定する(S5702)。欠陥処理パラメータを設定する(S5703)。被検査ウェハ100が装置にロード済でなければウェハ100をロードし(S5705)、ノッチやオリフラを用いてアライメントを合わせる(S5706)。エピウェハ上のテラスを含む領域が、照明光の照射領域に入るようにウェハを移動する(S5707)。
基板100が検査装置1にロードされ(S5801)基板チャック24で保持される。検査装置1は基板100のアライメントを実行し(S5802)、アライメントされた基板100上のノッチ195の座標を取得することにより(S5803)、基板100の角度と回転ステージの基準方向とのなす角度を検知する。
図59に、試料4001上の照明領域(照明スポット4020)と、回転ステージ4320及び並進ステージ4310の運動による走査方向との関係、及び、それによって試料4001条に描かれる照明スポット4020の軌跡を示す。
以上、本発明者によってなされた発明を実施例に基づき具体的に説明したが、本発明は上記実施例に限定されるものではなく、様々な変形例が含まれる。例えば、その要旨を逸脱しない範囲である実施例の構成の一部を他の実施例の構成に置き換えることが可能であり、また、ある実施例の構成に他の実施例の構成を加えることも可能である。また、各実施例の構成の一部について、他の公知の構成の追加・削除・置換をすることが可能である。
Claims (20)
- SOIウェハ上に生成させた光学的に不透明な薄膜にシャッタパターンが2次元状に配列して形成され、該シャッタパターンの下側の部分のSOIウェハが除去されて孔部が形成され前記SOIウェハの残った部分に動作電極が形成されたシャッタアレイと、
表面に電極パターンが形成されて前記シャッタアレイを搭載したガラス基板と、
該ガラス基板に形成された電極パターンと前記SOIウェハの動作電極とに電力を供給する給電部と、
を備え、前記給電部から前記電極パターンと前記動作電極とに供給する電力を制御することにより前記2次元状に配列して形成したシャッタパターンを前記孔部に対して開閉動作させ、
前記シャッタパターンは端部に突起を有することを特徴とする光学フィルタリングデバイス。 - 請求項1記載の光学フィルタリングデバイスであって、
前記シャッタパターンは端部に2つの突起を有することを特徴とする光学フィルタリングデバイス。 - 請求項1又は2に記載の光学フィルタリングデバイスであって、
前記ガラス基板の前記電極パターンが形成された面と対向する面に配線パターンが形成されており、前記配線パターンは前記シャッタパターンの突起の位置に対応する位置に凹み部分を有することを特徴とする光学フィルタリングデバイス。 - 請求項3記載の光学フィルタリングデバイスであって、
前記ガラス基板に形成された遮光パターンは、前記ガラス基板に形成された配線パターンの凹み部分の位置に対応する位置に配置されていることを特徴とする光学フィルタリングデバイス。 - 請求項1又は2の何れかに記載の光学フィルタリングデバイスであって、前記給電部は、前記シャッタパターンを開動作させるときの前記シャッタパターンと前記動作電極との電位差を前記シャッタパターンを閉動作させるときの前記シャッタパターンと前記電極パターンとの電位差より大きくなるように前記シャッタパターンと前記電極パターン又は前記動作電極との電位差を制御することを特徴とする光学フィルタリングデバイス。
- 検査対象基板を照明する照明手段と、
該照明手段で照明された前記検査対象基板からの散乱光のうち欠陥として検出したくない部分からの散乱光を遮光する光学フィルタリングデバイスを有して該光学フィルタリングデバイスで遮光されなかった散乱光を検出する検出光学系手段と、
該検出光学系手段で前記散乱光を検出して得た信号を処理して前記検査対象基板の欠陥を検出する信号処理手段と、
該信号処理手段で検出した欠陥の情報を出力する出力手段と
を備えた欠陥検査装置であって、
前記検出手段の光学フィルタリングデバイスは、
SOIウェハ上に生成させた光学的に不透明な薄膜にシャッタパターンが2次元状に配列して形成され、該シャッタパターンの下側の部分のSOIウェハが除去されて孔部が形成され前記SOIウェハの残った部分に動作電極が形成されたシャッタアレイと、
表面に電極パターンが形成されて前記シャッタアレイを搭載したガラス基板と、
該ガラス基板に形成された電極パターンと前記SOIウェハの動作電極とに電力を供給する給電部と、
を備え、前記給電部から前記電極パターンと前記動作電極とに供給する電力を制御することにより前記2次元状に配列して形成したシャッタパターンを前記孔部に対して開閉動作させる
ことを特徴とする欠陥検査装置。 - 請求項6記載の欠陥検査装置であって、前記検査対象基板は表面に規則的な回路パターンが形成されており、前記光学フィルタリングデバイスは、前記照明手段で照明された前記検査対象基板からの散乱光のうち、前記規則的な回路パターンから発生する強い散乱光を遮光することを特徴とする欠陥検査装置。
- 請求項6記載の欠陥検査装置であって、前記検査対象基板はシリコンエピウェハであり、前記光学フィルタリングデバイスは、前記照明手段で照明された前記シリコンエピウェハからの散乱光のうち、前記シリコンエピウェハの表面の微細な段差により発生する強い散乱光を遮光することを特徴とする欠陥検査装置。
- 請求項6乃至8の何れかに記載の欠陥検査装置であって、
前記光学フィルタリングデバイスのシャッタパターンは端部に2つの突起を有することを特徴とする欠陥検査装置。 - 請求項6乃至8の何れかに記載の欠陥検査装置であって、
前記光学フィルタリングデバイスのガラス基板の前記電極パターンが形成された面と対向する面には配線パターンが形成されており、前記配線パターンは前記シャッタパターンの突起の位置に対応する位置に凹み部分を有することを特徴とする欠陥検査装置。 - 請求項10記載の欠陥検査装置であって、
前記ガラス基板に形成された電極パターンは、前記ガラス基板に形成された配線パターンの凹み部分の位置に対応する位置に配置されていることを特徴とする欠陥検査装置。 - 請求項6乃至8の何れかに記載の欠陥検査装置であって、前記給電部は、前記シャッタパターンを開動作させるときの前記シャッタパターンと前記動作電極との電位差を前記シャッタパターンを閉動作させるときの前記シャッタパターンと前記電極パターンとの電位差より大きくなるように前記シャッタパターンと前記電極パターン又は前記動作電極との電位差を制御することを特徴とする欠陥検査装置。
- 検査対象基板を照明し、
該照明された前記検査対象基板からの散乱光のうち欠陥として検出したくない部分からの散乱光を光学フィルタリングデバイスで遮光し該光学フィルタリングデバイスで遮光されなかった散乱光を検出し、
該散乱光を検出して得た信号を処理して前記検査対象基板の欠陥を検出し、
該検出した欠陥の情報を出力する
欠陥検査方法であって、
前記光学フィルタリングデバイスで前記検査対象基板からの散乱光のうち欠陥として検出したくない部分からの散乱光を遮光することを、
SOIウェハ上に生成させた光学的に不透明な薄膜に2次元状に配列して形成されたシャッタパターンの下側の部分のSOIウェハが除去され孔部が形成されて前記SOIウェハの残った部分に動作電極が形成されたシャッタアレイの前記動作電極と、前記シャッタアレイを搭載したガラス基板の表面に形成された電極パターンとに供給する電力を制御することにより前記孔部に対して開閉動作が可能なシャッタパターンに対して前記供給する電力を制御することにより所望のシャッタパターンを閉じることにより散乱光を遮光する
ことを特徴とする欠陥検査方法。 - 請求項13記載の欠陥検査方法であって、前記検査対象基板は表面に規則的な回路パターンが形成されており、前記光学フィルタリングデバイスは、前記所望のシャッタパターンを閉じることにより前記照明された検査対象基板からの散乱光のうち、前記規則的な回路パターンから発生する強い散乱光を遮光することを特徴とする欠陥検査方法。
- 請求項13記載の欠陥検査方法であって、前記検査対象基板はシリコンエピウェハであり、前記光学フィルタリングデバイスは、前記所望のシャッタパターンを閉じることにより前記照明された前記シリコンエピウェハからの散乱光のうち、前記シリコンエピウェハの表面の微細な段差により発生する強い散乱光を遮光することを特徴とする欠陥検査方法。
- 請求項13乃至15の何れかに記載の欠陥検査方法であって、前記シャッタパターンを開動作させるときの前記シャッタパターンと前記動作電極との電位差を前記シャッタパターンを閉動作させるときの前記シャッタパターンと前記電極パターンとの電位差より大きくなるように前記シャッタパターンと前記電極パターン又は前記動作電極との電位差を制御することを特徴とする欠陥検査方法。
- SOIウエハ上に生成させた光学的に不透明な薄膜にシャッタパターンが2次元状に配列して形成され、前記シャッタパターンの下側の部分のSOIウエハが除去されて孔部が形成され該SOIウエハの残った部分に動作電極が形成されたシャッタアレイと、
表面に電極パターンが形成されて前記シャッタアレイを搭載したガラス基板と、
前記ガラス基板に形成された電極パターンと該SOIウエハの動作電極とに電力を供給する給電部と、を備え、
前記給電部から前記電極パターンと前記動作電極とに供給する電極を制御することにより前記二次元状に配列して形成したシャッタパターンを前記孔部に対して開閉動作させ、
前記シャッタパターンは端部に突起を有する光学フィルタリングデバイス。 - 請求項17記載の光学フィルタリングデバイスであって、
前記シャッタパターンは端部に2つの突起を有することを特徴とする光学フィルタリングデバイス。 - 請求項17記載の光学フィルタリングデバイスであって、
前記ガラス基板の前記電極パターンが形成された面と対向する面に配線パターンが形成されており、前記配線パターンは前記シャッタパターンの突起の位置に対応する位置に凹み部分を有することを特徴とする光学フィルタリングデバイス。 - 請求項17記載の光学フィルタリングデバイスであって、
前記ガラス基板に搭載された電極パターンは、前記ガラス基板に形成された配線パターンの凹み部分の位置に対応する位置に配置されていることを特徴とする光学フィルタリングデバイス。
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Also Published As
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US20140160471A1 (en) | 2014-06-12 |
WO2012105055A1 (ja) | 2012-08-09 |
US9182592B2 (en) | 2015-11-10 |
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