WO2012105701A1 - 導電性粒子及びこれを用いた異方性導電材料 - Google Patents

導電性粒子及びこれを用いた異方性導電材料 Download PDF

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Publication number
WO2012105701A1
WO2012105701A1 PCT/JP2012/052547 JP2012052547W WO2012105701A1 WO 2012105701 A1 WO2012105701 A1 WO 2012105701A1 JP 2012052547 W JP2012052547 W JP 2012052547W WO 2012105701 A1 WO2012105701 A1 WO 2012105701A1
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Prior art keywords
resin
layer
particles
metal
metal layer
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PCT/JP2012/052547
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English (en)
French (fr)
Japanese (ja)
Inventor
達朗 深谷
山本　潤
美佐夫 小西
竜 島田
勇人 本村
香取　健二
須藤　業
Original Assignee
ソニーケミカル＆インフォメーションデバイス株式会社
ソニー株式会社
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Application filed by ソニーケミカル＆インフォメーションデバイス株式会社, ソニー株式会社 filed Critical ソニーケミカル＆インフォメーションデバイス株式会社
Priority to CN2012800075384A priority Critical patent/CN103339687A/zh
Priority to KR1020137023157A priority patent/KR20140045328A/ko
Publication of WO2012105701A1 publication Critical patent/WO2012105701A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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Definitions

  • the present invention relates to conductive particles used for connection between electrodes and an anisotropic conductive material using the same.
  • anisotropic conductive films are used for mounting components such as semiconductors on a printed circuit board.
  • ACF Anisotropic Conductive Film
  • a driving IC integrated circuit
  • COG chip-on-glass
  • the conductive particles dispersed in the anisotropic conductive film those in which electroless Ni plating is applied around the resin particles and Au plating is applied to the outer periphery thereof are known.
  • Patent Document 3 discloses conductive particles in which metal particles are used as base material particles and sputtered metal is laminated on the surface of metal particles. However, metal particles have a wider particle size distribution than resin particles. It is difficult to cope with a fine pitch circuit.
  • the present invention has been proposed in view of such a conventional situation, and provides conductive particles that improve connection reliability in a fine circuit and an anisotropic conductive material using the same.
  • the inventors of the present invention improved the adhesion with the resin particle surface by coating the resin particle surface with electroless metal plating, and made the outermost layer a metal sputter layer. We found that reliable connection reliability can be obtained.
  • the conductive particles according to the present invention are characterized by having resin particles, an electroless metal plating layer covering the surface of the resin particles, and a metal sputter layer excluding Au forming the outermost layer.
  • the anisotropic conductive material according to the present invention includes a binder resin and conductive particles dispersed in the binder resin, and the conductive particles are electroless that covers the resin particles and the surface of the resin particles. It has a metal plating layer and a metal sputter layer excluding Au forming the outermost layer.
  • the first electronic component and the second electronic component include resin particles, an electroless metal plating layer that covers the resin particle surface, and Au that forms the outermost layer. It is electrically connected by conductive particles having a metal sputter layer to be removed.
  • connection method according to the present invention is such that conductive particles having resin particles, an electroless metal plating layer covering the surface of the resin particles, and a metal sputter layer excluding Au forming the outermost layer are dispersed in the binder resin.
  • the anisotropic conductive film made is pasted on the terminal of the first electronic component, the second electronic component is temporarily arranged on the anisotropic conductive film, and is pressed from above the second electronic component by a heat pressing device. The terminal of the first electronic component and the terminal of the second electronic component are connected.
  • the adhesion with the surface of the resin particles is improved, and by forming the outermost layer as a metal sputter layer, for example, IZO (Indium Zinc Oxide), Even when a fine pitch wiring material having a smooth surface such as amorphous ITO (Indium (Tin Oxide) is used, high connection reliability can be obtained. Furthermore, the same effect can be obtained even when a metal wiring that easily forms an oxide film is used.
  • IZO Indium Zinc Oxide
  • FIG. 1 is a cross-sectional view showing conductive particles in the present embodiment.
  • the electroconductive particle shown as a specific example of this invention has a resin particle, the electroless metal plating layer which coat
  • FIG. 1 is a cross-sectional view showing an example of conductive particles in the present embodiment.
  • the conductive particles include resin particles 11, an electroless metal plating layer 12 that covers the surface of the resin particles 11, and a metal sputter layer 13 that covers the electroless metal plating layer 12.
  • Resin particle 11 is a base material (core) particle of conductive particles, and a particle that does not cause changes such as breakage, melting, flow, decomposition, and carbonization during mounting is used.
  • resin particles 11 include monofunctional vinyl compounds typified by (meth) acrylic acid esters such as ethylene, propylene, and styrene, diallyl phthalate, triallyl trimellitate, triallyl cyanurate, Copolymers with polyfunctional vinyl compounds such as divinylbenzene, di (meth) acrylate, tri (meth) acrylates, curable polyurethane resin, cured epoxy resin, phenol resin, benzoguanamine resin, melamine resin, polyamide, polyimide , Silicone resin, fluororesin, polyester, polyphenylene sulfide resin, polyphenylene ether and the like.
  • Particularly desirable resin particles 11 are selected from physical properties such as elastic modulus at the time of thermocompression bonding and fracture strength, and are polystyrene resin, acrylate resin, benzoguanamine resin, and a copolymer of a monofunctional vinyl compound and a polyfunctional vinyl compound.
  • the average particle diameter of the resin particles 11 is not particularly limited, but is preferably 1 to 20 ⁇ m. When the average particle size is less than 1 ⁇ m, for example, when performing electroless plating, the particles tend to aggregate and hardly form single particles. On the other hand, if the average particle diameter exceeds 20 ⁇ m, the range used for fine pitch circuit boards as an anisotropic conductive material may be exceeded.
  • the average particle diameter of the resin particles is obtained by measuring the particle diameters of 50 randomly selected base particles and arithmetically averaging them.
  • the electroless metal plating layer 12 is one or more types of metal layers made of Cu, Ni, Co, Au, Ag, and Sn by electroless plating.
  • an electroless Ni plating layer having good adhesion to the surface of the resin particles 11 is used.
  • the thickness of the electroless metal plating layer 12 is preferably 20 to 200 nm. If the thickness is less than 20 nm, adhesion to the surface of the resin particles 11 cannot be obtained. On the other hand, if the thickness exceeds 200 nm, the conductive particles themselves aggregate and cannot be applied to fine pitch circuit connection.
  • the metal sputter layer 13 is a metal layer made of Ni, Ru, W, Pd, Ir, Co, Mo, Ti, Rh, Pt, or an alloy containing one or more of these by sputtering.
  • a bipolar sputtering method, a magnetron sputtering method, an RF (radio frequency) sputtering method, a reactive sputtering method, and other known sputtering methods can be widely used.
  • a film forming method by a general vapor deposition method such as vacuum vapor deposition, laser ablation, chemical vapor deposition may be used.
  • the Vickers hardness (Hv) of the metal sputter layer 13 is preferably 40 to 500. When the Vickers hardness (Hv) is less than 40, there is little biting into the wiring, and good connection resistance cannot be obtained. On the other hand, when the Vickers hardness (Hv) exceeds 500, the film ductility is poor, plating peeling does not occur, and good connection resistance cannot be obtained. In addition, Vickers hardness can be measured by the Vickers hardness test method prescribed
  • the thickness of the metal sputter layer 13 is preferably 5 to 200 nm. When the thickness is less than 5 nm, a film is not uniformly formed, so that good connection resistance cannot be obtained. On the other hand, if the thickness exceeds 200 nm, the rate at which particle agglomeration occurs increases, which may reduce the insulating properties. Considering the manufacturing cost by sputtering, the more preferable thickness of the sputtered metal layer 13 is 5 to 30 nm.
  • conductive particles use resin particles 11 as base material particles, the particle size distribution is narrower than that of metal particles, and can correspond to fine pitch wiring. Moreover, since the surface of the resin particle 11 is covered with the electroless metal plating layer 12, the adhesion with the surface of the resin particle 11 is improved, and the adhesion of the metal sputter layer 13 can be improved. Furthermore, since the sputtered metal layer 13 is formed as the outermost layer, the conductive particles can be caused to penetrate into the wiring, and the surface is smooth, such as IZO (Indium Zinc Oxide) or non-crystalline ITO (Indium Tin Oxide). Even when a fine pitch wiring material is used, high connection reliability can be obtained. Furthermore, the same effect can be obtained even when a metal wiring that easily forms an oxide film is used.
  • IZO Indium Zinc Oxide
  • ITO Indium Tin Oxide
  • Anisotropic Conductive Material An anisotropic conductive material shown as a specific example of the present invention is obtained by dispersing the above-described conductive particles in a binder resin.
  • Binder resin adhesive materials include epoxy resin, phenol resin, isocyanate resin, silicone resin, polyester resin, phenoxy resin, terpene resin, rosin resin, polyacrylic resin, styrene-butadiene rubber, acrylonitrile butadiene rubber, fluoro rubber, Thermosetting resins or thermoplastic resins such as polyethylene resin, vinyl resin, polybutylene resin, polybutadiene resin, polystyrene resin, polycarbonate resin, polyurethane resin, ionomer resin, polyacetal resin, etc. may be mentioned. You may use in combination of more than one kind.
  • binder resin it is preferable to contain a film-forming resin, a thermosetting resin, and a curing agent.
  • the film-forming resin corresponds to a high molecular weight resin having an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film formation.
  • the film forming resin include various resins such as phenoxy resin, polyester urethane resin, polyester resin, polyurethane resin, acrylic resin, polyimide resin, butyral resin, and these may be used alone or in combination of two or more. You may use it in combination.
  • phenoxy resin is preferably used from the viewpoints of film formation state, connection reliability, and the like.
  • thermosetting resin an epoxy resin, a liquid epoxy resin having fluidity at room temperature, or the like may be used alone, or two or more kinds may be mixed and used.
  • the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin, and various modified epoxy resins such as rubber and urethane. These may be used alone or in combination of two or more. Also good.
  • Liquid epoxy resins include bisphenol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, phenol novolac type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin, and naphthol type epoxy resin. Resin, dicyclopentadiene type epoxy resin, triphenylmethane type epoxy resin and the like can be used, and these may be used alone or in combination of two or more.
  • the curing agent is not particularly limited and can be appropriately selected depending on the purpose.
  • a latent curing agent that is activated by heating a latent curing agent that generates free radicals by heating, or the like can be used.
  • the latent curing agent that is activated by heating include anionic curing agents such as polyamines and imidazoles, and cationic curing agents such as sulfonium salts.
  • silane coupling agent epoxy, amino, mercapto sulfide, ureido, and the like can be used. Among these, in this Embodiment, an epoxy-type silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved. Moreover, you may add an inorganic filler. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used, and the kind of the inorganic filler is not particularly limited. Depending on the content of the inorganic filler, the fluidity can be controlled and the particle capture rate can be improved.
  • a rubber component or the like can also be used as appropriate for the purpose of relaxing the stress of the bonded body. Moreover, when mix
  • a composition of a binder resin in which each component is blended is applied onto a release substrate using a bar coater, a coating device, etc., and the composition on the release substrate is then heated in a heat oven. Then, an anisotropic conductive film having a predetermined thickness is obtained by drying using a heat drying apparatus or the like.
  • the release substrate has, for example, a laminated structure in which a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), etc. While preventing the anisotropic conductive film from drying, these shapes are maintained.
  • connection structure is such that the first electronic component and the second electronic component are electrically connected by the conductive particles described above.
  • Examples of the first electronic component include an IC (Integrated Circuit) in which fine pitch bumps are formed.
  • Examples of the second electronic component include IZO (Indium Zinc Oxide), amorphous ITO (Indium Tin Oxide), and the like.
  • a fine-pitch wiring material having a smooth surface can be used.
  • the conductive particles in the present embodiment are suitably used for joining such fine pitch IC and the wiring material. Since the conductive particles in the present embodiment cover the surface of the resin particles 11 with the electroless metal plating layer 12, the adhesion to the surface of the resin particles 11 is improved, and the adhesion of the metal sputter layer 13 is also improved. Can be improved. In addition, since the metal sputter layer 13 is formed as the outermost layer, conductive particles can be bitten into the wiring. For example, IZO (Indium Zinc Oxide), amorphous ITO (Indium Tin Oxide), etc. Even when a wiring material having a pitch is used, high connection reliability can be obtained. Furthermore, the same effect can be obtained even when a metal wiring that easily forms an oxide film is used.
  • the method for connecting an electronic component in the present embodiment includes a resin particle, an electroless metal plating layer covering the surface of the resin particle, and a metal sputter layer excluding Au forming the outermost layer.
  • An anisotropic conductive film in which particles are dispersed in a binder resin is pasted on a terminal of the first electronic component, a second electronic component is temporarily placed on the anisotropic conductive film, and heating is performed from the second electronic component. Pressing with a pressing device connects the terminal of the first electronic component and the terminal of the second electronic component. Thereby, the connection body by which the terminal of the 1st electronic component and the terminal of the 2nd electronic component were connected via the electroconductive particle is obtained.
  • the anisotropic conductive film contains conductive particles whose resin particle surfaces are coated with an electroless metal plating layer, the conductive particles can be caused to bite into the wiring.
  • high connection reliability can be obtained even when a fine pitch wiring material having a smooth surface such as IZO (Indium Zinc ⁇ Oxide) or amorphous ITO (Indium Tin Oxide) is used.
  • IZO Indium Zinc ⁇ Oxide
  • ITO Indium Tin Oxide
  • Example> Examples of the present invention will be described below, but the present invention is not limited to these examples.
  • the first metal layer and the second metal layer were formed in this order on the resin particles to produce conductive particles of Examples 1 to 10 and Comparative Examples 1 to 7.
  • the thickness of the first metal layer, the thickness of the second metal layer, and the Vickers hardness (Hv) of the second metal layer were measured.
  • anisotropic conductive films were produced using the conductive particles of Examples 1 to 10 and Comparative Examples 1 to 7. Using each anisotropic conductive film, an IC (Integrated Circuit) and a glass substrate on which a wiring pattern was formed were joined to obtain a mounting body. And about each mounting body, connection resistance was measured and connection reliability was evaluated.
  • IC Integrated Circuit
  • the thickness measurement of the metal layer was performed as follows.
  • a metal of the second metal layer was formed on the glass substrate by a DC magnetron sputtering method.
  • the sputtered metal layer was measured with a Vickers hardness tester (manufactured by Mitutoyo Corporation, HM-125) according to JIS Z2244, and this was defined as the Vickers hardness (Hv) of the second metal layer.
  • this Vickers hardness (Hv) was computed by making test load into Kgf unit.
  • phenoxy resin trade name: PKHH, manufactured by Phenoxy Associates
  • naphthalene type bifunctional epoxy resin trade name: HP4032D, manufactured by DIC
  • thermosetting resin 33 parts by mass of an imidazole curing agent (HP3941, manufactured by Asahi Kasei Chemicals Corporation)
  • an epoxy silane coupling agent trade name: A-187, Momentive Performance Materials Co., Ltd.
  • Conductive particles were prepared as in Examples 1 to 10 and Comparative Examples 1 to 7 described later.
  • ITO Indium Tin Oxide
  • the 0.7 mm thick ITO wiring board or glass substrate was bonded to a 0.7 mm thick IZO wiring board obtained by patterning an IZO (Indium Zinc Oxide) film.
  • An anisotropic conductive film was slit to a predetermined width and attached to an ITO wiring board or an IZO wiring board. After temporarily fixing the IC thereon, bonding was performed at a bonding condition of 200 ° C.-60 MPa-5 sec using a heat tool coated with Teflon (trademark) having a thickness of 50 ⁇ m as a buffer material, thereby completing a mounting body. .
  • connection resistance With respect to the mounted body, an initial resistance and a resistance after a TH test (Thermal Humidity Test) at a temperature of 85 ° C., a humidity of 85% RH, and 500 hours were measured. The measurement was performed using a digital multimeter (digital multimeter 7555, manufactured by Yokogawa Electric Corporation) to measure the connection resistance when a current of 1 mA was passed by the four-terminal method.
  • Example 1 A Ni sputter layer (second metal layer) was formed by DC magnetron sputtering on the surface of the Ni-plated resin particles having an average particle diameter of 3 ⁇ m obtained by electroless Ni plating (first metal layer) on the resin particles.
  • the Ni plating resin particles were prepared as follows. A palladium catalyst is supported by 5 g of divinylbenzene resin particles having an average particle diameter of 3 ⁇ m synthesized as described above by a dipping method. Nickel sulfate hexahydrate, sodium hypophosphite, sodium citrate are supported on the resin particles.
  • Electroless nickel plating was performed using an electroless nickel plating solution (pH 12, plating temperature 50 ° C.) prepared from triethanolamine and thallium nitrate, and a Ni plating layer (first metal layer) was formed on the surface.
  • Conductive particles were produced.
  • a DC magnetron sputtering device manufactured in-house on the conductive particles having the Ni plating layer (first metal layer) formed on the surface, a vacuum degree of 1.5 Pa, an argon gas flow rate of 15.0 sccm, A second metal layer was formed on the surface of the first metal layer at a sputtering output of 1 W / cm 2 .
  • the second metal layer was formed on the surface of the first metal layer while cooling the container holding the particles with a coolant having a temperature of 25 ° C.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 50 to 70.
  • Example 2 A Ru sputtered layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m as in Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 30 nm.
  • the Vickers hardness (Hv) of the second metal layer was 300 to 400.
  • Example 3 A Ru sputtered layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m as in Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 300 to 400.
  • Example 4 A Ru sputtered layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m as in Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 5 nm.
  • the Vickers hardness (Hv) of the second metal layer was 300 to 400.
  • Example 5 A Ru—Co sputtered layer (second layer) is formed on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which electroless Ni plating (first metal layer) is applied to resin particles by DC magnetron sputtering. Metal layer).
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 350 to 450.
  • Example 6 The W sputtered layer (second metal layer) is formed on the surface of the Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which the electroless Ni plating (first metal layer) is applied to the resin particles by the DC magnetron sputtering method. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 300 to 400.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 1.6 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 10.8 ⁇ . Table 1 shows the measurement results.
  • Example 7 A Pd sputter layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 40-60.
  • Example 8 An Ir sputter layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 300 to 400.
  • Example 9 A Co sputtered layer (second metal layer) is formed on the surface of the Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles by DC magnetron sputtering. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 100 to 150.
  • Example 10 A Mo sputtered layer (second metal layer) is formed by DC magnetron sputtering on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m as in Example 1 in which electroless Ni plating (first metal layer) is applied to the resin particles. ) was formed.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 150 to 200.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 10-30.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 3.0 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 4.4 ⁇ , and the resistance after the TH test was 229.0 ⁇ . Table 2 shows the measurement results.
  • Electroless Ni-P plating layer (first electrode layer) is formed on the surface of Ni-plated resin particles having an average particle diameter of 3 ⁇ m similar to Example 1 in which electroless Ni plating (first metal layer) is applied to resin particles by electroless plating. 2 metal layers).
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the second metal layer was 10-30.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 4.1 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 34.2 ⁇ . Table 2 shows the measurement results.
  • the second metal layer was not formed using Ni-plated resin particles having an average particle diameter of 3 ⁇ m as in Example 1 in which electroless Ni plating (first metal layer) was applied to the resin particles.
  • the thickness of the first metal layer was 100 nm.
  • the Vickers hardness (Hv) of the first metal layer was 10-30.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 4.1 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 34.2 ⁇ . Table 2 shows the measurement results.
  • a Ni sputter layer (first metal layer) was formed on the surface of divinylbenzene resin particles having an average particle diameter of 3 ⁇ m by a DC magnetron sputtering method, and a second metal layer was not formed.
  • the thickness of the first metal layer was 100 nm.
  • the Vickers hardness (Hv) of the first metal layer was 50 to 70.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 5.8 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 108.0 ⁇ . Table 2 shows the measurement results.
  • a Ni sputtered layer (first metal layer) is formed by DC magnetron sputtering on the surface of divinylbenzene resin particles having an average particle diameter of 3 ⁇ m, and a Ni sputtered layer (second metal layer) is further formed by DC magnetron sputtering. did.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm.
  • the Vickers hardness (Hv) of the first metal layer was 50 to 70.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 5.8 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 108.0 ⁇ . Table 2 shows the measurement results.
  • a Ni sputtered layer (first metal layer) is formed by DC magnetron sputtering on the surface of divinylbenzene resin particles having an average particle size of 3 ⁇ m, and an electroless Ni plated layer (first electroplating layer is formed on the surface of the Ni sputtered layer by electroless plating. 2 metal layers).
  • the thickness of the first metal layer was 15 nm, and the thickness of the second metal layer was 100 nm.
  • the Vickers hardness (Hv) of the first metal layer was 10-30.
  • the initial resistance was 0.1 ⁇ , and the resistance after the TH test was 6.7 ⁇ . Further, when the IC and the IZO wiring board were joined using the anisotropic conductive film containing the conductive particles, the initial resistance was 0.2 ⁇ , and the resistance after the TH test was 67.8 ⁇ . Table 2 shows the measurement results.
  • the thickness of the first metal layer was 100 nm, and the thickness of the second metal layer was 15 nm. Further, the Vickers hardness (Hv) of the first metal layer was 10 to 20.
  • the first metal layer is an electroless metal plating layer
  • the second metal layer is a Ni sputter layer, Ru sputter layer, Ru—Co sputter layer, W sputter layer, Pd.
  • Good connection reliability was obtained by using any one of the sputtered layer, Ir sputtered layer, Co sputtered layer, and Mo sputtered layer.
  • the Vickers hardness (Hv) of the second metal layer is 40 or more, good connection reliability is obtained, and in particular, the Vickers hardness (Hv) is 300 or more. In this case, good connection reliability was obtained for the IZO wiring board.
  • good connection reliability was obtained when the thickness of the metal sputter layer was 5 to 30 nm.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
PCT/JP2012/052547 2011-02-04 2012-02-03 導電性粒子及びこれを用いた異方性導電材料 WO2012105701A1 (ja)

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CN104540777A (zh) * 2013-07-19 2015-04-22 Lg化学株式会社 用于形成透明导电膜的核-壳纳米颗粒及使用其的透明导电膜的制造方法
JP2015210883A (ja) * 2014-04-24 2015-11-24 タツタ電線株式会社 金属被覆樹脂粒子及びそれを用いた導電性接着剤
JP2016015312A (ja) * 2014-06-11 2016-01-28 積水化学工業株式会社 導電性粒子、導電性粒子の製造方法、導電材料及び接続構造体

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CN103748635B (zh) * 2011-12-21 2016-08-31 积水化学工业株式会社 导电性粒子、导电材料及连接结构体
KR101595182B1 (ko) * 2014-06-11 2016-02-17 안우영 도전볼의 제조방법
JP2016181511A (ja) * 2015-03-23 2016-10-13 デクセリアルズ株式会社 導電性粒子、異方性導電接着剤及び接続構造体
WO2017142086A1 (ja) * 2016-02-18 2017-08-24 積水化学工業株式会社 電気モジュール及び電気モジュールの製造方法
JP7039883B2 (ja) 2016-12-01 2022-03-23 デクセリアルズ株式会社 異方性導電フィルム
WO2018101106A1 (ja) 2016-12-01 2018-06-07 デクセリアルズ株式会社 異方性導電フィルム
KR102596306B1 (ko) 2017-03-29 2023-10-30 가부시끼가이샤 레조낙 도전 입자의 선별 방법, 회로 접속 재료, 접속 구조체 및 그의 제조 방법, 그리고 도전 입자
JP7292669B2 (ja) * 2019-04-11 2023-06-19 株式会社レゾナック 導電粒子の製造方法
KR102404193B1 (ko) * 2019-05-20 2022-05-30 타츠타 전선 주식회사 도전성 접착 시트

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CN104540777A (zh) * 2013-07-19 2015-04-22 Lg化学株式会社 用于形成透明导电膜的核-壳纳米颗粒及使用其的透明导电膜的制造方法
JP2015210883A (ja) * 2014-04-24 2015-11-24 タツタ電線株式会社 金属被覆樹脂粒子及びそれを用いた導電性接着剤
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