WO2012090360A1 - Metal base circuit board, and method for producing metal base circuit board - Google Patents
Metal base circuit board, and method for producing metal base circuit board Download PDFInfo
- Publication number
- WO2012090360A1 WO2012090360A1 PCT/JP2011/005510 JP2011005510W WO2012090360A1 WO 2012090360 A1 WO2012090360 A1 WO 2012090360A1 JP 2011005510 W JP2011005510 W JP 2011005510W WO 2012090360 A1 WO2012090360 A1 WO 2012090360A1
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- Prior art keywords
- circuit board
- metal base
- base circuit
- aluminum substrate
- resin layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
Definitions
- the present invention relates to a metal base circuit board and a method for manufacturing the metal base circuit board.
- Patent Document 1 When an oxide film is formed on the surface of the metal substrate constituting the metal base circuit board, the adhesion with the insulating resin layer is lowered. Therefore, as described in Patent Document 1 or 2, in order to remove the oxide film on the surface of the aluminum substrate, mechanical polishing for polishing the surface or chemical etching of the surface as described in Patent Documents 3 to 5 is performed. A roughening method is performed. In recent years, light emitting elements such as LEDs are mounted and used as light sources for liquid crystal display devices (Patent Document 6).
- the present inventors have found a new problem of improving the adhesion between the aluminum substrate and the resin layer and further improving the yield of various apparatuses using the metal base circuit board.
- the LED light source unit described in Patent Document 6 has a predetermined shape in which the metal base circuit board is disposed in the housing, but still has the above-described problems when processed into various shapes. It was.
- the present inventors have intensively studied in view of the above problems, and even when the surface of the aluminum substrate is smooth, by making the contact angle with water within a predetermined range, the adhesion with the resin layer is improved, and the metal It has been found that all of the improvement in the yield of various devices using the base circuit board can be satisfied, and the present invention has been completed.
- the present inventors have intensively studied in view of the above problems, and by treating the surface of the aluminum substrate with a safe and simple method, the adhesion with the resin layer is improved and the metal base circuit board is obtained.
- the present inventors have found that it is possible to satisfy any of the improvement in yield of various devices using the present invention.
- a metal base circuit board in which an aluminum substrate, an insulating resin layer, and a metal layer are sequentially laminated,
- the contact angle of the aluminum substrate surface with water is 50 ° or more and 95 ° or less
- a metal base circuit board having a surface roughness (Rz) of 3 ⁇ m or more and 9 ⁇ m or less is provided.
- a method of manufacturing the metal base circuit board Contacting the aluminum substrate with water at 50 ° C. or more and 80 ° C. or less for 0.5 minutes or more and 3 minutes or less; Forming the insulating resin layer on the surface of the aluminum substrate after processing, and then forming the metal layer on the insulating resin layer.
- a method for treating an aluminum substrate used in the metal base circuit board There is provided a method for treating an aluminum substrate for a metal base circuit board, wherein the aluminum substrate is contacted with water at 50 ° C. or higher and 80 ° C. or lower for 0.5 minutes or longer and 3 minutes or shorter.
- a method of manufacturing the metal base circuit board Irradiating the aluminum substrate surface with ultraviolet rays; Forming the insulating resin layer on the surface of the aluminum substrate after irradiation with the ultraviolet light, and then forming the metal layer on the insulating resin layer.
- the integrated light quantity of the ultraviolet to be irradiated to the aluminum substrate surface is 0.1 J / cm 2 or more 1.0 J / cm 2 or less, the processing method of an aluminum substrate metal base circuit board is provided.
- the metal base circuit board of the present invention is excellent in the adhesion between the aluminum substrate and the insulating resin layer, solder heat resistance, and bending resistance, and can improve the yield of various devices using the same.
- the metal base circuit board 10 includes an aluminum substrate 12, an insulating resin layer 14, and a metal layer 16 stacked in order.
- the metal base circuit board 10 is used as a heat spreader.
- the surface of the aluminum substrate 12 in contact with the insulating resin layer 14 has a surface roughness (Rz) in the range of 3 ⁇ m to 9 ⁇ m, more preferably in the range of 3 ⁇ m to 5 ⁇ m, and is smooth.
- the surface of the aluminum substrate 12 has a contact angle with water of 50 ° to 95 °, preferably 55 ° to 90 °.
- the contact angle with water can be calculated according to JIS R3257, and an average of 5 or more points can be calculated as the contact angle.
- the surface roughness can be calculated according to JIS B0601, and can be calculated as a ten-point average roughness (Rz).
- the surface of the aluminum substrate 12 since the surface of the aluminum substrate 12 is not subjected to mechanical polishing or chemical etching, it has an oxide layer by natural oxidation.
- the thickness of the aluminum substrate 12 is not less than 100 ⁇ m and not more than 5000 ⁇ m. If the thickness is less than 100 ⁇ m, the heat dissipation as a heat spreader decreases. When the thickness exceeds 5000 ⁇ m, workability such as bending is degraded.
- the aluminum substrate 12 may not be surface-treated with a coupling agent. Even if the aluminum substrate 12 of this embodiment is not surface-treated with a coupling agent, the adhesion to the insulating resin layer 14 is excellent. Therefore, the process of processing the surface of the aluminum substrate 12 with a coupling agent can be omitted.
- the bending elastic modulus of the insulating resin layer 14 is 5 GPa or more and 20 GPa or less. Thereby, even when stress is applied to the metal base circuit board, the insulating resin layer 14 is excellent in flexibility, so that the adhesion between the aluminum substrate 12 and the insulating resin layer 14 is further improved.
- the flexural modulus can be measured as follows. Two copper foils with resin are stacked so that the resin layers face each other and pressed at 220 ° C. for 180 minutes to obtain a resin plate with double-sided copper foil. The entire surface of the resin plate with the double-sided copper foil is etched to produce a test piece of 6 mm ⁇ 25 mm ⁇ 0.2 mm (thickness). And it heats up at 5 degree-C / min using DMA apparatus (TA Instruments company make dynamic viscoelasticity measuring apparatus DMA983), and measures the bending elastic modulus in 25 degreeC.
- DMA apparatus T Instruments company make dynamic viscoelasticity measuring apparatus DMA983
- the insulating resin layer 14 may be a single layer or a multilayer.
- the insulating resin layer 14 contains a thermosetting resin and an inorganic filler as main components.
- the thermosetting resin include an epoxy resin, a phenol resin, a melamine resin, and an unsaturated polyester resin, and it is preferable to use an epoxy resin.
- the epoxy resin is not particularly limited as long as it is an epoxy resin having two or more epoxy groups in one molecule.
- bisphenol type such as bisphenol A type and bisphenol F type, biphenyl type, novolac type, polyfunctional phenol
- glycidyl ethers such as naphthylene, naphthalene, alicyclic and alcohols, glycidylamines and glycidylesters, and one or a mixture of two or more can be used.
- epoxy resins it is preferable to use bisphenol F-type or A-type epoxy resins and those obtained by hydrogenating these resins.
- bisphenol F type or A type epoxy resin which is liquid at normal temperature is preferable.
- thermosetting resin can be contained in the insulating resin layer 14 in an amount of 10% by mass to 90% by mass.
- a resin other than the thermosetting resin can also be blended. Thereby, adhesiveness with the aluminum substrate 12 can be improved more.
- the inorganic filler examples include, but are not limited to, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, and crystallinity.
- Silica, amorphous silica, silicon carbide and the like can be mentioned.
- alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable from the viewpoint of high thermal conductivity. More preferred is alumina. When alumina is used, it is preferable in terms of heat resistance and insulation in addition to high thermal conductivity.
- crystalline silica or amorphous silica is preferable in that it has few ionic impurities.
- a metal base substrate having excellent insulation reliability can be manufactured.
- Crystalline silica or amorphous silica is preferable in that it has high insulation under a water vapor atmosphere such as a pressure cooker test and has little corrosion on metals, aluminum wires, aluminum plates, and the like.
- aluminum hydroxide and magnesium hydroxide are preferred.
- aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, Amorphous silica is preferred.
- the content of the inorganic filler is not particularly limited, but is preferably included in the insulating resin layer 14 in an amount of 10% by mass to 90% by mass.
- (B) By making content of an inorganic filler into 10 mass% or more, thermal resistance can be reduced and sufficient heat dissipation can be obtained. By making content of an inorganic filler into 90 mass% or less, it can suppress that the fluidity
- the metal layer 16 is comprised from copper, aluminum, nickel, iron, tin, etc., and may contain 2 or more types.
- the metal layer 16 has a thickness of about 0.1 to 1500 ⁇ m.
- Other layers such as an adhesive layer may be interposed between the insulating resin layer 14 and the metal layer 16.
- the adhesion between the aluminum substrate 12 and the insulating resin layer 14 is improved. To do. Furthermore, it is excellent in solder heat resistance and bending resistance, and the yield of various devices using the same is improved.
- the contact angle with water on the surface of the aluminum substrate 12 the better the wettability with water.
- the contact angle with water is less than 50 °, the adhesion between the aluminum substrate 12 and the insulating resin layer 14 decreases.
- the contact angle with the water on the surface of the aluminum substrate 12 is within a predetermined range, the wettability with the resin composition forming the insulating resin layer 14 becomes an appropriate range, and the aluminum substrate 12 It is considered that the adhesion with the insulating resin layer 14 is improved even if the surface is smooth.
- the adhesion strength between the aluminum substrate 12 and the insulating resin layer 14 is 20 kg / cm 2 or more and 50 kg / cm 2 or less, preferably 30 kg / cm 2 or more and 45 kg / cm 2 or less. can do.
- the adhesion strength can be measured under the following conditions. ⁇ Test equipment: NXT-250P (manufactured by Toyama Sangyo Co., Ltd.) A resin varnish for obtaining the insulating resin layer is applied to an aluminum test chip (disc-shaped, bonding surface 2.0 cm ⁇ ), and the coated surface is bonded to a fixed aluminum test plate. The resin varnish is cured under conditions of 180 ° C.
- the aluminum test chip is pulled up in the vertical direction at a speed of 1.5 mm / min, and the time when the aluminum test chip or the aluminum test plate and the resin layer are peeled is measured as the adhesion strength.
- the metal base circuit board 10 of the present embodiment can form a circuit by etching the metal layer 16 into a predetermined pattern.
- the metal base circuit board 10 functions as a heat spreader by mounting various heating elements such as LEDs, semiconductor elements, or laser elements on the circuit.
- the aluminum substrate is treated with water, and then an insulating resin layer and a metal layer are formed.
- the aluminum substrate is treated with ultraviolet rays, and thereafter And a method of forming an insulating resin layer and a metal layer.
- the manufacturing method of the metal base circuit board 10 of this embodiment includes the following steps (a) to (b).
- (b) The insulating resin layer 14 is formed on the surface of the aluminum substrate 12 after the treatment, Step of forming metal layer 16 on 14
- the aluminum substrate 12 is brought into contact with water at 50 ° C. or more and 80 ° C. or less, preferably 50 ° C. or more and 70 ° C. or less for 0.5 minutes or more and 3 minutes or less, preferably 0.5 minutes or more and 2 minutes or less.
- water used for the treatment pure water can be used.
- alcohols such as isopropyl alcohol, ethanol, and tert-butyl alcohol, and various ions such as Ca 2+ , Mg 2+ , Na + , K + , and Cl ⁇ are included as long as the surface tension of the aluminum substrate 12 is not affected. You may go out.
- the treatment method it is sufficient if water can be brought into contact with the surface of the aluminum substrate 12 under the above conditions, and examples include immersion treatment, running water treatment, and spray treatment. After the contact treatment, moisture is removed by a predetermined method.
- the surface roughness (Rz) of the aluminum substrate 12 hardly changes before and after the treatment and is 3 to 9 ⁇ m and is smooth.
- the surface roughness can be calculated according to JIS B0601, and can be calculated as a ten-point average roughness (Rz).
- the contact angle of the aluminum substrate 12 with water can be adjusted to 50 ° to 95 °, preferably 55 ° to 85 °.
- the aluminum substrate 12 of this embodiment has excellent adhesion to the insulating resin layer 14 even if it is not surface-treated with a coupling agent. Therefore, since the process of processing the surface of the aluminum substrate 12 with a coupling agent can be omitted, the process can be simplified.
- an insulating resin layer 14 is formed on the surface of the treated aluminum substrate 12, and then a metal layer 16 is formed on the insulating resin layer 14.
- the resin composition is applied to the surface of the aluminum substrate 12 and preliminarily cured to obtain a B-staged state. And metal foil is bonded together, post-curing is performed, and the metal base circuit board 10 by which the insulating resin layer 14 and the metal layer 16 were laminated
- the resin composition can be applied to the surface of the aluminum substrate 12 and cured to form the insulating resin layer 14, and then the metal layer 16 can be formed on the insulating resin layer 14 by metal vapor deposition.
- an insulating resin layer may be formed on the surface of the metal foil and bonded to the processed aluminum substrate 12.
- the resin composition is applied to the surface of the metal foil and pre-cured to obtain a B-stage state.
- the metal base circuit board 10 in which the insulating resin layer 14 and the metal layer 16 are laminated on the surface of the aluminum substrate 12 is manufactured by bonding with the aluminum substrate 12 and post-curing.
- the metal foil is not particularly limited.
- Metal foils, such as an alloy, iron, and an iron-type alloy, are mentioned.
- copper foil is preferable in that the metal foil can be used as a conductor circuit by etching. From the viewpoint of low thermal expansion, an iron-nickel alloy is preferable.
- the method for producing the metal foil may be either an electrolytic method or a rolling method.
- the metal foil may be plated with metal such as Ni plating, Ni—Au plating, solder plating, etc., but from the point of adhesiveness to the insulating resin layer 14, the insulating resin layer 14 of the conductor circuit is formed. It is more preferable that the surface on the side in contact with the surface is previously roughened by etching, plating, or the like.
- the thickness of the metal foil is not particularly limited, but is preferably 0.5 ⁇ m or more and 105 ⁇ m or less, more preferably 1 ⁇ m or more and 70 ⁇ m or less, and particularly preferably 9 ⁇ m or more and 35 ⁇ m or less.
- the thickness variation of metal foil can be made small by making the thickness of metal foil below an upper limit, and the surface roughness variation of a metal foil roughening surface can be suppressed.
- an ultrathin metal foil with a carrier foil can be used as the metal foil.
- the ultrathin metal foil with a carrier foil is a metal foil obtained by laminating a peelable carrier foil and an ultrathin metal foil.
- an ultrathin metal foil layer can be formed on both sides of an insulating layer by using an ultrathin metal foil with a carrier foil, for example, when forming a circuit by a semi-additive method, an ultrathin metal without performing electroless plating By electroplating the foil as a direct power supply layer, the ultrathin copper foil can be flash etched after the circuit is formed.
- an ultra-thin metal foil with a carrier foil even with an ultra-thin metal foil having a thickness of 10 ⁇ m or less, for example, a reduction in handling properties of the ultra-thin metal foil in a pressing process, and cracking or cutting of the ultra-thin copper foil are prevented. Can do.
- the resin composition is acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, cellosolve, carbitol, anisole, etc.
- Dissolve, mix, and stir in various organic solvents using various mixing machines such as the ultrasonic dispersion method, high-pressure collision dispersion method, high-speed rotation dispersion method, bead mill method, high-speed shear dispersion method, and rotation and revolution dispersion method.
- various mixing machines such as the ultrasonic dispersion method, high-pressure collision dispersion method, high-speed rotation dispersion method, bead mill method, high-speed shear dispersion method, and rotation and revolution dispersion method.
- the content of the resin composition in the resin varnish is not particularly limited, but is preferably 45% by mass or more and 85% by mass or less, and particularly preferably 55% by mass or more and 75% by mass or less.
- a resin varnish is applied to the surface of the aluminum substrate 12 using various coating apparatuses, and dried.
- the resin varnish is spray-coated on the surface of the aluminum substrate 12 by a spray device and then dried.
- the coating apparatus is not particularly limited, and for example, a roll coater, a bar coater, a knife coater, a gravure coater, a die coater, a comma coater, a curtain coater, or the like can be used.
- a method using a die coater, a knife coater, and a comma coater is preferable. Thereby, the insulating resin layer 14 which has no void and has a uniform thickness can be efficiently manufactured.
- the thickness of the insulating resin layer 14 is preferably in the range of 20 ⁇ m to 250 ⁇ m.
- the thickness of the insulating resin layer 14 is preferably in the range of 20 ⁇ m to 250 ⁇ m.
- the thickness of the insulating resin layer 14 is set to 250 ⁇ m or less, the amount of strain at the surface mounting portion of the metal base circuit board 10 is reduced, and good thermal shock reliability can be obtained, and the thermal resistance is reduced. And sufficient heat dissipation can be obtained. Therefore, if the thickness of the insulating resin layer 14 is within the above range, the balance of these characteristics is excellent.
- the manufacturing method of the metal base circuit board 10 according to the present embodiment includes a step of bringing the surface of the aluminum substrate into contact with water under a predetermined condition. It is possible to obtain a metal base circuit board that is excellent in adhesion, solder heat resistance, and bending resistance and that can improve the yield of various devices using the same.
- the resin composition for preparing the insulating resin layer 14 includes a curing agent, a curing accelerator, a coupling agent, a flexibility-imparting component, an antioxidant, and a leveling agent. Etc. can be included.
- Curing agents include diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylylenediamine (MXDA), isophoronediamine (IPD), 1,3-bisaminomethylcyclohexane (1,3BAC), diaminodiphenylmethane (DDM) , Mphenylenediamine (MPDA), diaminodiphenyl sulfone (DDS), dicyandiamide (DICY), organic acid hydrazide, dodecenyl succinic anhydride (DDSA), polyazeline anhydride (PAPA), hexahydrophthalic anhydride (HHPA), methyl Tetrahydrophthalic anhydride (MTHPA), methyl nadic anhydride (MNA), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenonetetracarboxylic acid (BTDA), tetrabromoanhydride Examples thereof include phthalic acid
- Curing accelerators include various imidazoles such as 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole, and various phosphorus compounds such as triphenylphosphine and triphenylphosphite. And various tertiary amines such as triethylamine, benzyldimethylamine, pyridine, DBU (diazabicycloundecene), and quaternary ammonium salts.
- Coupling agents include 2- (3,4-epoxycyclohexyl), 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3- Glycidoxypropyltriethoxysilane, vinyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-isocyanate
- Examples include various silane coupling agents such as propyltriethoxysilane.
- the content of the coupling agent preferably satisfies the following formula (1). 5 ⁇ 10 ⁇ 2 ⁇ c ⁇ (b ⁇ 1/100) ⁇ 11 (1)
- c (mass%) shows content of a coupling agent with respect to 100 mass% of total amounts of a resin composition.
- b (mass%) shows content of the inorganic filler with respect to 100 mass% of total amounts of a resin composition.
- [c- (b ⁇ 1/100)] is a coupling agent present in the resin composition without adhering to the surface of the inorganic filler (that is, free in the resin composition) Content of the coupling agent).
- the coupling agent has a functional group bonded to an organic material and an inorganic material in the molecule.
- An inorganic material and an organic material are combined through this coupling agent.
- the coupling agent is used for adhesion between the inorganic filler and the resin composition, and is treated on the surface of the inorganic filler.
- the processing amount (content of a coupling agent with respect to the whole resin composition) of a coupling agent is determined according to content of an inorganic filler.
- the treatment amount of the coupling agent is about 0.5 to 1% by mass with respect to 100% by mass of the total amount of inorganic filler.
- (b ⁇ 1/100) in the above formula (1) indicates a general processing amount of the coupling agent with respect to the inorganic filler. Then, by subtracting the coupling agent treatment amount (b ⁇ 1/100) from the total amount c of the coupling agent, the content of the free coupling agent in the resin composition [c ⁇ (B ⁇ 1/100)] can be estimated.
- Such a free coupling agent in the resin composition is present in the resin composition without adhering to the surface of the inorganic filler.
- Such a coupling agent acts on the aluminum substrate 12 which is an inorganic material, and can improve the adhesion between the insulating resin layer 14 and the aluminum substrate 12.
- the lower limit of the content of the free coupling agent in the resin composition is preferably 5 ⁇ 10 ⁇ 2 mass% or more, more preferably 1 ⁇ 10 ⁇ 1 mass% or more, and further preferably 5 ⁇ .
- 10 is a -1% by weight or more
- the upper limit amount is not particularly limited, for example, preferably not more than 11 wt%, more preferably 10 wt% or less, more preferably not more than 9 mass%.
- the content of the free coupling agent in the resin composition equal to or higher than the lower limit value, the effect obtained from the inorganic filler is sufficiently brought out and the adhesion between the insulating resin layer 14 and the aluminum substrate 12 is enhanced. It becomes possible to improve the insulating properties of the metal base circuit board 10. Moreover, by making content of the coupling agent which is free in a resin composition below into an upper limit, it is suppressed that a coupling agent is hydrolyzed and solder heat resistance falls.
- [c- (b ⁇ 1/100)] is 0 or less when the processing amount of the coupling agent is about 1% by mass with respect to 100% by mass of the total amount of the inorganic filler. In other words, it can be said that this is a case where a general processing amount of the coupling agent is used.
- the metal base circuit board using this type of resin composition has considerable room for improving the adhesion between the metal plate and the resin layer.
- the flexibility-imparting component examples include a phenoxy resin and a rubber component.
- phenoxy resin examples include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton.
- a phenoxy resin having a structure having a plurality of these skeletons can also be used.
- the weight average molecular weight of the phenoxy resin is not particularly limited, but is preferably 4.0 ⁇ 10 4 or more and 8.0 ⁇ 10 4 or less.
- the molecular weight is 4.0 ⁇ 10 4 or more and 8.0 ⁇ 10 4 or less, the following effects can be obtained.
- the elastic modulus can be reduced, and when used for the metal base circuit board 10, the stress relaxation property is also excellent. For example, when a semiconductor device on which electronic components are mounted is manufactured, the semiconductor device cracks at or near the solder joint that joins the electronic component and the metal base substrate even under rapid heating / cooling environments. The occurrence of defects such as these is suppressed.
- the weight average molecular weight of the phenoxy resin is a value in terms of polystyrene measured by gel permeation chromatography (GPC).
- the content of the phenoxy resin is preferably 10% by mass or more and 40% by mass or less of the entire resin composition.
- the content of the phenoxy resin 10% by mass or more, the effect of lowering the elastic modulus can be sufficiently obtained, excellent in stress relaxation when used in the metal base circuit board 10, and subjected to rapid heating / cooling. Also, it is possible to suppress the occurrence of cracks in the solder or in the vicinity thereof.
- the content of the phenoxy resin By setting the content of the phenoxy resin to 40% by mass or less, fluidity at the time of pressing is deteriorated, generation of voids and the like is suppressed, and the insulation reliability of the metal base circuit board 10 can be improved.
- the whole resin composition means solid except a solvent, and liquid components, such as a liquid epoxy and a coupling agent, are contained in a resin composition.
- rubber particles can be used as the rubber component.
- the rubber particles include core-shell type rubber particles, crosslinked acrylonitrile butadiene rubber particles, crosslinked styrene butadiene rubber particles, acrylic rubber particles, and silicone particles.
- the core-shell type rubber particles are rubber particles having a core layer and a shell layer.
- the outer shell layer is composed of a glassy polymer
- the inner core layer is composed of a rubbery polymer
- Examples include a three-layer structure in which the outer shell layer is composed of a glassy polymer, the intermediate layer is composed of a rubbery polymer, and the core layer is composed of a glassy polymer.
- the glassy polymer layer is made of, for example, a polymer of methyl methacrylate.
- the rubbery polymer layer is made of, for example, a butyl acrylate polymer (butyl rubber).
- core-shell type rubber particles include Staphyloid AC3832, AC3816N (trade names, manufactured by Ganz Kasei Co., Ltd.), and Metabrene KW-4426 (trade names, manufactured by Mitsubishi Rayon Co., Ltd.).
- NBR crosslinked acrylonitrile butadiene rubber
- XER-91 average particle size 0.5 ⁇ m, manufactured by JSR.
- SBR crosslinked styrene butadiene rubber
- acrylic rubber particles include methabrene W300A (average particle size 0.1 ⁇ m), W450A (average particle size 0.2 ⁇ m) (manufactured by Mitsubishi Rayon Co., Ltd.), and the like.
- the silicone particles are not particularly limited as long as they are rubber elastic fine particles formed of organopolysiloxane.
- silicone rubber fine particles commercially available products such as KMP-605, KMP-600, KMP-597, KMP-594 (manufactured by Shin-Etsu Chemical), Trefil E-500, Trefil E-600 (manufactured by Toray Dow Corning), etc. Can be used.
- the content of the rubber particles is not particularly limited, but is preferably 20% by mass or more and 80% by mass or less, and particularly preferably 30% by mass or more and 75% by mass or less of the entire resin composition together with the inorganic filler. When the content is within the range, particularly low water absorption can be achieved.
- the manufacturing method of the metal base circuit board 10 of this embodiment includes the following steps (c) and (d).
- the surface of the aluminum substrate 12 is irradiated with ultraviolet rays.
- ultraviolet rays used for the treatment those having a wavelength of 185 nm or 254 nm can be used.
- Integrated light quantity of ultraviolet light irradiating the aluminum surface of the substrate 12 is preferably not 0.1 J / cm 2 or more 1.0 J / cm 2 or less, more preferably 0.2 J / cm 2 or more 0.8 J / cm 2 or less is there. Since this integrated light quantity is the product of the ultraviolet radiation intensity (mW / cm 2 ) and the irradiation time (seconds), the integrated light quantity can be adjusted by the intensity of ultraviolet light used and the irradiation time. Moreover, the radiation intensity of the ultraviolet rays applied to the surface of the aluminum substrate 12 is not particularly limited, but is preferably 1.0 mW / cm 2 or more and 100 mW / cm 2 or less.
- the contact angle of the surface of the aluminum substrate 12 with water can be adjusted to 50 ° to 95 °, preferably 55 ° to 90 °. Further, the surface roughness (Rz) of the aluminum substrate 12 hardly changes before and after the treatment and is 3 to 9 ⁇ m, which is smooth.
- the distance from the aluminum substrate 12 is preferably 5 cm or less, more preferably 3 cm or less, and particularly preferably 1 cm or less. If the distance to the aluminum substrate 12 exceeds 5 cm, the irradiation effect may not be sufficiently obtained.
- the ultraviolet irradiation device to be used is not particularly limited as long as it can irradiate ultraviolet rays having a wavelength of 185 nm or 254 nm, and examples thereof include an ultraviolet irradiation device using a low-pressure mercury lamp.
- the aluminum substrate 12 of this embodiment has excellent adhesion to the insulating resin layer 14 even if it is not surface-treated with a coupling agent. Therefore, since the process of processing the surface of the aluminum substrate 12 with a coupling agent can be omitted, the process can be simplified.
- Example 1 In the following Example 1, the case where the resin varnish a is used is referred to as “Example 1a”, and the case where the resin varnish b is used is referred to as “Example 1b”. The same applies to other examples and comparative examples.
- Examples 2 to 5 and Comparative Examples 1 to 8 The aluminum plate was treated according to the treatment conditions shown in Tables 1 to 3, washed with acetone and dried to obtain an aluminum test plate.
- Example 6 An aluminum plate having a thickness of 1 mm and a length and width of 10 cm was used as a substrate.
- a low-pressure mercury lamp manufactured by Oak Co., Ltd., wavelength: 185 nm, radiation intensity 5.0 mW / cm 2 ) was used. According to the processing conditions shown in Table 4, one side of the substrate was irradiated with ultraviolet rays to obtain an aluminum test plate.
- the aluminum test plates obtained in each of the examples, comparative examples, and reference examples were subjected to the following evaluations by the following measurement methods.
- the evaluation results are shown in Tables 1 to 4.
- the relationship between the contact angle and the adhesion strength is shown in FIG.
- the relationship between processing conditions and adhesion strength is shown in FIG.
- the aluminum test chip was pulled up at a rate of 1.5 mm / min in the vertical direction, and the time when the aluminum test chip or the aluminum test plate and the resin layer were peeled was measured as the adhesion strength.
- the evaluation results are shown in Tables 1 to 4.
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Abstract
Description
また、近年では、LEDのような発光素子などを搭載し、液晶表示装置などの光源として用いられるようになってきている(特許文献6)。 When an oxide film is formed on the surface of the metal substrate constituting the metal base circuit board, the adhesion with the insulating resin layer is lowered. Therefore, as described in Patent Document 1 or 2, in order to remove the oxide film on the surface of the aluminum substrate, mechanical polishing for polishing the surface or chemical etching of the surface as described in Patent Documents 3 to 5 is performed. A roughening method is performed.
In recent years, light emitting elements such as LEDs are mounted and used as light sources for liquid crystal display devices (Patent Document 6).
アルミニウム基板と、絶縁樹脂層と、金属層とが順に積層されてなる金属ベース回路基板であって、
前記アルミニウム基板表面の水との接触角が50°以上95°以下であり、
表面粗度(Rz)が3μm以上9μm以下である、金属ベース回路基板が提供される。 According to the present invention,
A metal base circuit board in which an aluminum substrate, an insulating resin layer, and a metal layer are sequentially laminated,
The contact angle of the aluminum substrate surface with water is 50 ° or more and 95 ° or less,
A metal base circuit board having a surface roughness (Rz) of 3 μm or more and 9 μm or less is provided.
上記金属ベース回路基板の製造方法であって、
前記アルミニウム基板を50℃以上80℃以下の水に0.5分間以上3分間以下接触させる工程と、
処理後の前記アルミニウム基板表面に前記絶縁樹脂層を形成し、次いで前記絶縁樹脂層上に前記金属層を形成する工程と
を含む、金属ベース回路基板の製造方法が提供される。 Furthermore, according to the present invention,
A method of manufacturing the metal base circuit board,
Contacting the aluminum substrate with water at 50 ° C. or more and 80 ° C. or less for 0.5 minutes or more and 3 minutes or less;
Forming the insulating resin layer on the surface of the aluminum substrate after processing, and then forming the metal layer on the insulating resin layer.
上記金属ベース回路基板に用いられるアルミニウム基板の処理方法であって、
前記アルミニウム基板を50℃以上80℃以下の水に0.5分間以上3分間以下接触させる、金属ベース回路基板用アルミニウム基板の処理方法が提供される。 Furthermore, according to the present invention,
A method for treating an aluminum substrate used in the metal base circuit board,
There is provided a method for treating an aluminum substrate for a metal base circuit board, wherein the aluminum substrate is contacted with water at 50 ° C. or higher and 80 ° C. or lower for 0.5 minutes or longer and 3 minutes or shorter.
上記金属ベース回路基板の製造方法であって、
前記アルミニウム基板表面に紫外線を照射する工程と、
前記紫外線を照射後の前記アルミニウム基板表面に前記絶縁樹脂層を形成し、次いで前記絶縁樹脂層上に前記金属層を形成する工程と
を含む、金属ベース回路基板の製造方法が提供される。 Furthermore, according to the present invention,
A method of manufacturing the metal base circuit board,
Irradiating the aluminum substrate surface with ultraviolet rays;
Forming the insulating resin layer on the surface of the aluminum substrate after irradiation with the ultraviolet light, and then forming the metal layer on the insulating resin layer.
上記金属ベース回路基板に用いられるアルミニウム基板の処理方法であって、
前記アルミニウム基板表面に照射する前記紫外線の積算光量が0.1J/cm2以上1.0J/cm2以下である、金属ベース回路基板用アルミニウム基板の処理方法が提供される。 Furthermore, according to the present invention,
A method for treating an aluminum substrate used in the metal base circuit board,
The integrated light quantity of the ultraviolet to be irradiated to the aluminum substrate surface is 0.1 J / cm 2 or more 1.0 J / cm 2 or less, the processing method of an aluminum substrate metal base circuit board is provided.
図1に記載のように、本実施形態に係る金属ベース回路基板10は、アルミニウム基板12と、絶縁樹脂層14と、金属層16とが順に積層されてなる。金属ベース回路基板10は、ヒートスプレッダーとして用いられる。 <Metal base circuit board>
As shown in FIG. 1, the metal
絶縁樹脂層14と接触するアルミニウム基板12の表面は、表面粗度(Rz)が3μm以上9μm以下の範囲にあり、さらに好ましくは3μm以上5μm以下の範囲にあり平滑である。そして、アルミニウム基板12の表面は、水との接触角が50°以上95°以下、好ましくは55°以上90°以下である。 (Aluminum substrate 12)
The surface of the
水との接触角は、JIS R3257に準拠して行い、5点以上の平均を接触角として算出することができる。表面粗度は、JIS B0601に準拠して行い、十点平均粗さ(Rz)として算出することができる。 With such a contact angle, even when the surface of the
The contact angle with water can be calculated according to JIS R3257, and an average of 5 or more points can be calculated as the contact angle. The surface roughness can be calculated according to JIS B0601, and can be calculated as a ten-point average roughness (Rz).
絶縁樹脂層14の曲げ弾性率は、5GPa以上20GPa以下である。これにより、金属ベース回路基板に応力が加わった場合においても、絶縁樹脂層14は可とう性に優れるため、アルミニウム基板12と絶縁樹脂層14との密着性がより向上する。
曲げ弾性率は、以下のように測定することができる。
樹脂層同士が向かい合うように2枚の樹脂付き銅箔を重ね、220℃で180分間プレスを行い、両面銅箔付き樹脂板を得る。この両面銅箔付き樹脂板を全面エッチングし、6mm×25mm×0.2mm(厚)の試験片を作製する。そして、DMA装置(TAインスツルメント社製動的粘弾性測定装置DMA983)を用いて5℃/分で昇温し、25℃での曲げ弾性率を測定する。 (Insulating resin layer 14)
The bending elastic modulus of the insulating
The flexural modulus can be measured as follows.
Two copper foils with resin are stacked so that the resin layers face each other and pressed at 220 ° C. for 180 minutes to obtain a resin plate with double-sided copper foil. The entire surface of the resin plate with the double-sided copper foil is etched to produce a test piece of 6 mm × 25 mm × 0.2 mm (thickness). And it heats up at 5 degree-C / min using DMA apparatus (TA Instruments company make dynamic viscoelasticity measuring apparatus DMA983), and measures the bending elastic modulus in 25 degreeC.
熱硬化性樹脂としては、エポキシ樹脂、フェノール樹脂、メラミン樹脂、不飽和ポリエステル樹脂、などを挙げることができ、エポキシ樹脂を用いることが好ましい。 The insulating
Examples of the thermosetting resin include an epoxy resin, a phenol resin, a melamine resin, and an unsaturated polyester resin, and it is preferable to use an epoxy resin.
エポキシ樹脂の中でも、ビスフェノールF型またはA型のエポキシ樹脂、さらにこれらの樹脂が水素添加されたものを用いることが好ましい。とくに常温で液状のビスフェノールF型またはA型のエポキシ樹脂が好ましい。これらの樹脂を用いることにより、絶縁樹脂層14は可とう性に優れ、金属ベース回路基板10が曲げられて使用される場合においても、アルミニウム基板12と絶縁樹脂層14との剥離が抑制される。 The epoxy resin is not particularly limited as long as it is an epoxy resin having two or more epoxy groups in one molecule. For example, bisphenol type such as bisphenol A type and bisphenol F type, biphenyl type, novolac type, polyfunctional phenol These include glycidyl ethers such as naphthylene, naphthalene, alicyclic and alcohols, glycidylamines and glycidylesters, and one or a mixture of two or more can be used.
Among epoxy resins, it is preferable to use bisphenol F-type or A-type epoxy resins and those obtained by hydrogenating these resins. In particular, bisphenol F type or A type epoxy resin which is liquid at normal temperature is preferable. By using these resins, the insulating
これらの中でも、アルミナ、窒化アルミニウム、窒化ホウ素、結晶性シリカ、非晶性シリカが、高熱伝導性の観点から好ましい。さらに好ましくは、アルミナである。アルミナを用いた場合、高熱伝導性に加え、耐熱性、絶縁性の点で好ましい。また、結晶性シリカまたは非晶性シリカは、イオン性不純物が少ない点で好ましい。絶縁信頼性に優れる金属ベース基板を製造することができる。
結晶性シリカまたは非晶性シリカは、プレッシャークッカテストなどの水蒸気雰囲気下で絶縁性が高く、金属、アルミ線、アルミ板などの腐食が少ない点で好適である。
一方、難燃性の観点からは、水酸化アルミニウム、水酸化マグネシウムが好ましい。
さらに、溶融粘度調整やチクトロピック性の付与の目的においては、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグシウム、アルミナ、結晶性シリカ、非晶性シリカが好ましい。 Examples of the inorganic filler include, but are not limited to, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, and crystallinity. Silica, amorphous silica, silicon carbide and the like can be mentioned.
Among these, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable from the viewpoint of high thermal conductivity. More preferred is alumina. When alumina is used, it is preferable in terms of heat resistance and insulation in addition to high thermal conductivity. Further, crystalline silica or amorphous silica is preferable in that it has few ionic impurities. A metal base substrate having excellent insulation reliability can be manufactured.
Crystalline silica or amorphous silica is preferable in that it has high insulation under a water vapor atmosphere such as a pressure cooker test and has little corrosion on metals, aluminum wires, aluminum plates, and the like.
On the other hand, from the viewpoint of flame retardancy, aluminum hydroxide and magnesium hydroxide are preferred.
Furthermore, for the purpose of adjusting melt viscosity and imparting cyclotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, Amorphous silica is preferred.
金属層16は、銅、アルミニウム、ニッケル、鉄、錫などから構成され、2種以上含んでいてもよい。金属層16の層厚は、0.1~1500μm程度である。なお、絶縁樹脂層14と金属層16との間には、接着層などの他の層が介在していてもよい。 (Metal layer 16)
The
密着強度は、以下の条件で測定することができる。
・試験装置:NXT-250P(富山産業社製)
・アルミニウム試験チップ(円盤状、接着面2.0cmφ)に、前記絶縁樹脂層を得るための樹脂ワニスを塗布し、塗布面を固定されたアルミニウム試験板に接着する。180℃60分間の条件で前記樹脂ワニスを硬化させ、前記アルミニウム試験チップと前記アルミニウム試験板とを樹脂層を介して接着させる。
・アルミニウム試験チップを1.5mm/分速度で垂直方向に引き上げ、前記アルミニウム試験チップまたは前記アルミニウム試験板と前記樹脂層とが剥がれた時点を密着強度として測定する。 In the metal
The adhesion strength can be measured under the following conditions.
・ Test equipment: NXT-250P (manufactured by Toyama Sangyo Co., Ltd.)
A resin varnish for obtaining the insulating resin layer is applied to an aluminum test chip (disc-shaped, bonding surface 2.0 cmφ), and the coated surface is bonded to a fixed aluminum test plate. The resin varnish is cured under conditions of 180 ° C. for 60 minutes, and the aluminum test chip and the aluminum test plate are bonded via a resin layer.
-The aluminum test chip is pulled up in the vertical direction at a speed of 1.5 mm / min, and the time when the aluminum test chip or the aluminum test plate and the resin layer are peeled is measured as the adhesion strength.
本実施形態の金属ベース回路基板10の製造方法として、(1)アルミニウム基板を水で処理し、その後、絶縁樹脂層、金属層を形成する方法、(2)アルミニウム基板を紫外線で処理し、その後、絶縁樹脂層、金属層を形成する方法が挙げられる。 <Manufacturing method of metal base circuit board>
As a manufacturing method of the metal
以下、(1)アルミニウム基板を水で処理し、その後、絶縁樹脂層、金属層を形成する方法について説明する。
本実施形態の金属ベース回路基板10の製造方法は以下の工程(a)~(b)を含んでいる。
(a)アルミニウム基板12を、50℃以上80℃以下の水に0.5分~3分間接触させる工程
(b)処理後のアルミニウム基板12表面に絶縁樹脂層14を形成し、次いで絶縁樹脂層14上に金属層16を形成する工程 <Production Method of Metal Base Circuit Board (1)>
Hereinafter, (1) a method of treating an aluminum substrate with water and then forming an insulating resin layer and a metal layer will be described.
The manufacturing method of the metal
(A) The step of bringing the
アルミニウム基板12を、50℃以上80℃以下、好ましくは50℃以上70℃以下の水に0.5分間以上3分間以下、好ましくは0.5分間以上2分間以下接触させる。当該処理に用いられる水としては、純水を用いることができる。また、アルミニウム基板12の表面張力に影響を与えない範囲で、イソプロピルアルコール、エタノール、tert-ブチルアルコールなどのアルコール類、Ca2+、Mg2+、Na+、K+、Cl-などの各種イオンを含んでいてもよい。 (Process (a))
The
このような接触処理により、アルミニウム基板12表面の水との接触角を50°以上95°以下、好ましくは55°以上85°以下に調整することができる。 As the treatment method, it is sufficient if water can be brought into contact with the surface of the
By such contact treatment, the contact angle of the
次いで、処理後のアルミニウム基板12表面に、絶縁樹脂層14を形成し、次いで絶縁樹脂層14上に金属層16を形成する。
具体的には、硬化後の厚みを考慮して、樹脂組成物をアルミニウム基板12表面に塗布し、予備硬化させてBステージ化状態とする。そして、金属箔を貼り合わせ、後硬化を行い、アルミニウム基板12表面に、絶縁樹脂層14と金属層16が積層された金属ベース回路基板10を製造する。 (Process (b))
Next, an insulating
Specifically, taking into account the thickness after curing, the resin composition is applied to the surface of the
また、工程(a)の後、金属箔表面に絶縁樹脂層を形成し、処理後のアルミニウム基板12と貼り合わせてもよい。具体的には、硬化後の厚みを考慮して、樹脂組成物を金属箔表面に塗布し、予備硬化させてBステージ化状態とする。そしてアルミニウム基板12と貼り合わせ、後硬化を行いアルミニウム基板12表面に、絶縁樹脂層14と金属層16が積層された金属ベース回路基板10を製造する。 Alternatively, the resin composition can be applied to the surface of the
Further, after the step (a), an insulating resin layer may be formed on the surface of the metal foil and bonded to the processed
また、金属箔としては、キャリア箔付き極薄金属箔を用いることもできる。キャリア箔付き極薄金属箔とは、剥離可能なキャリア箔と極薄金属箔とを張り合わせた金属箔である。キャリア箔付き極薄金属箔を用いることで絶縁層の両面に極薄金属箔層を形成できることから、例えば、セミアディティブ法などで回路を形成する場合、無電解メッキを行うことなく、極薄金属箔を直接給電層として電解メッキすることで、回路を形成後、極薄銅箔をフラッシュエッチングすることができる。キャリア箔付き極薄金属箔を用いることによって、厚さ10μm以下の極薄金属箔でも、例えばプレス工程での極薄金属箔のハンドリング性の低下や、極薄銅箔の割れや切れを防ぐことができる。 The thickness of the metal foil is not particularly limited, but is preferably 0.5 μm or more and 105 μm or less, more preferably 1 μm or more and 70 μm or less, and particularly preferably 9 μm or more and 35 μm or less. By controlling the thickness of the metal foil to the lower limit or less, the occurrence of pinholes is suppressed, and when the metal foil is etched and used as a conductor circuit, plating variations during circuit pattern formation, circuit disconnection, etching solution and desmear solution It is possible to avoid the possibility of infiltration of a chemical solution such as the above. Moreover, the thickness variation of metal foil can be made small by making the thickness of metal foil below an upper limit, and the surface roughness variation of a metal foil roughening surface can be suppressed.
Further, as the metal foil, an ultrathin metal foil with a carrier foil can be used. The ultrathin metal foil with a carrier foil is a metal foil obtained by laminating a peelable carrier foil and an ultrathin metal foil. Since an ultrathin metal foil layer can be formed on both sides of an insulating layer by using an ultrathin metal foil with a carrier foil, for example, when forming a circuit by a semi-additive method, an ultrathin metal without performing electroless plating By electroplating the foil as a direct power supply layer, the ultrathin copper foil can be flash etched after the circuit is formed. By using an ultra-thin metal foil with a carrier foil, even with an ultra-thin metal foil having a thickness of 10 μm or less, for example, a reduction in handling properties of the ultra-thin metal foil in a pressing process, and cracking or cutting of the ultra-thin copper foil are prevented. Can do.
まず、樹脂組成物を、アセトン、メチルエチルケトン、メチルイソブチルケトン、トルエン、酢酸エチル、シクロヘキサン、ヘプタン、シクロヘキサンシクロヘキサノン、テトラヒドロフラン、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、エチレングリコール、セルソルブ系、カルビトール系、アニソールなどの有機溶剤中で、超音波分散方式、高圧衝突式分散方式、高速回転分散方式、ビーズミル方式、高速せん断分散方式、および自転公転式分散方式などの各種混合機を用いて溶解、混合、撹拌して樹脂ワニスを作製する。 Hereinafter, a method for forming the insulating
First, the resin composition is acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, cellosolve, carbitol, anisole, etc. Dissolve, mix, and stir in various organic solvents using various mixing machines such as the ultrasonic dispersion method, high-pressure collision dispersion method, high-speed rotation dispersion method, bead mill method, high-speed shear dispersion method, and rotation and revolution dispersion method. To prepare a resin varnish.
塗工装置は、とくに限定されないが、例えば、ロールコーター、バーコーター、ナイフコーター、グラビアコーター、ダイコーター、コンマコーターおよびカーテンコーターなどを用いることができる。これらの中でも、ダイコーター、ナイフコーター、およびコンマコーターを用いる方法が好ましい。これにより、ボイドがなく、均一な厚みを有する絶縁樹脂層14を効率よく製造することができる。 Next, a resin varnish is applied to the surface of the
The coating apparatus is not particularly limited, and for example, a roll coater, a bar coater, a knife coater, a gravure coater, a die coater, a comma coater, a curtain coater, or the like can be used. Among these, a method using a die coater, a knife coater, and a comma coater is preferable. Thereby, the insulating
このような金属ベース回路基板10に半導体素子、抵抗部品などを表面実装した場合、部材間の歪が大きくなることを抑制し、十分な熱衝撃信頼性を得ることができる。また、絶縁樹脂層14の厚さを250μm以下とすることにより、金属ベース回路基板10の表面実装部分における歪量が少なくなり、良好な熱衝撃信頼性を得ることができるとともに、熱抵抗が低減し十分な放熱性を得ることができる。そのため、絶縁樹脂層14の厚さが上記範囲内にあれば、これらの特性のバランスに優れる。 The thickness of the insulating
When a semiconductor element, a resistance component, or the like is surface-mounted on such a metal
5×10-2<c-(b×1/100)<11 (1)
ここで、c(質量%)は、樹脂組成物の合計量100質量%に対するカップリング剤の含有量を示す。b(質量%)は、樹脂組成物の合計量100質量%に対する無機フィラーの含有量を示す。
上記式(1)中[c-(b×1/100)]は、無機フィラーの表面に付着せずに、樹脂組成物中に存在しているカップリング剤(すなわち、樹脂組成物中の遊離しているカップリング剤)の含有量を示す。 The content of the coupling agent preferably satisfies the following formula (1).
5 × 10 −2 <c− (b × 1/100) <11 (1)
Here, c (mass%) shows content of a coupling agent with respect to 100 mass% of total amounts of a resin composition. b (mass%) shows content of the inorganic filler with respect to 100 mass% of total amounts of a resin composition.
In the above formula (1), [c- (b × 1/100)] is a coupling agent present in the resin composition without adhering to the surface of the inorganic filler (that is, free in the resin composition) Content of the coupling agent).
まず、カップリング剤は、分子内に有機材料および無機材料と結合する官能基を合わせ持っている。このカップリング剤を介して、無機材料と有機材料とが結合されることになる。
カップリング剤は、本技術分野において、無機フィラーと樹脂組成物との接着に用いられており、無機フィラーの表面に処理されることになる。このため、カップリング剤の処理量(カップリング剤の樹脂組成物全体に対する含有量)は、無機フィラーの含有量に応じて、決定されることになる。
通常、カップリング剤の処理量は、無機フィラーの合計量100質量%に対して0.5~1質量%程度であることが知られている。
したがって、上記式(1)中の(b×1/100)は、無機フィラーに対するカップリング剤の一般的な処理量を示す。そして、カップリング剤の全量cから、カップリング剤の処理量(b×1/100)を差し引くことにより、上述のとおり、樹脂組成物中の遊離しているカップリング剤の含有量[c-(b×1/100)]を見積もることができる。 Hereinafter, this point will be described.
First, the coupling agent has a functional group bonded to an organic material and an inorganic material in the molecule. An inorganic material and an organic material are combined through this coupling agent.
In this technical field, the coupling agent is used for adhesion between the inorganic filler and the resin composition, and is treated on the surface of the inorganic filler. For this reason, the processing amount (content of a coupling agent with respect to the whole resin composition) of a coupling agent is determined according to content of an inorganic filler.
Usually, it is known that the treatment amount of the coupling agent is about 0.5 to 1% by mass with respect to 100% by mass of the total amount of inorganic filler.
Therefore, (b × 1/100) in the above formula (1) indicates a general processing amount of the coupling agent with respect to the inorganic filler. Then, by subtracting the coupling agent treatment amount (b × 1/100) from the total amount c of the coupling agent, the content of the free coupling agent in the resin composition [c− (B × 1/100)] can be estimated.
本実施形態において、樹脂組成物中の遊離しているカップリング剤の含有量を特定の範囲とすることにより、絶縁樹脂層14とアルミニウム基板12との密着性、およびヒートサイクル特性のバランスを実現することができる。すなわち、樹脂組成物中の遊離しているカップリング剤の含有量として、下限値は好ましくは5×10-2質量%以上、より好ましくは1×10-1質量%以上、さらに好ましくは5×10-1質量%以上であり、上限量は、とくに限定されないが、例えば、好ましくは11質量%以下であり、より好ましくは10質量%以下であり、さらに好ましくは9質量%以下である。 Such a free coupling agent in the resin composition is present in the resin composition without adhering to the surface of the inorganic filler. Such a coupling agent acts on the
In this embodiment, by setting the content of the free coupling agent in the resin composition within a specific range, the adhesion between the insulating
また、樹脂組成物中の遊離しているカップリング剤の含有量を上限値以下とすることにより、カップリング剤が加水分解されて、半田耐熱性が低下することが抑制される。 By making the content of the free coupling agent in the resin composition equal to or higher than the lower limit value, the effect obtained from the inorganic filler is sufficiently brought out and the adhesion between the insulating
Moreover, by making content of the coupling agent which is free in a resin composition below into an upper limit, it is suppressed that a coupling agent is hydrolyzed and solder heat resistance falls.
これに対して、本実施形態においては、[c-(b×1/100)]>0.05となる。これにより、絶縁樹脂層14とアルミニウム基板12との密着性を高め、金属ベース回路基板10の絶縁性特性を向上させることが可能となる。 Conventionally, for example, [c- (b × 1/100)] is 0 or less when the processing amount of the coupling agent is about 1% by mass with respect to 100% by mass of the total amount of the inorganic filler. In other words, it can be said that this is a case where a general processing amount of the coupling agent is used. The metal base circuit board using this type of resin composition has considerable room for improving the adhesion between the metal plate and the resin layer.
On the other hand, in this embodiment, [c− (b × 1/100)]> 0.05. As a result, the adhesion between the insulating
分子量が4.0×104以上8.0×104以下であることにより、次の効果が得られる。第1に、低弾性率化が可能となり、金属ベース回路基板10に用いると応力緩和性にも優れることになる。例えば、電子部品などを実装した半導体装置を製造した場合、当該半導体装置は、急激な加熱/冷却の環境下においても、電子部品と金属ベース基板を接合する半田接合部、またはその近傍で、クラックなどの不良が発生することが抑制されることになる。 The weight average molecular weight of the phenoxy resin is not particularly limited, but is preferably 4.0 × 10 4 or more and 8.0 × 10 4 or less.
When the molecular weight is 4.0 × 10 4 or more and 8.0 × 10 4 or less, the following effects can be obtained. First, the elastic modulus can be reduced, and when used for the metal
なお、樹脂組成物全体とは、例えば、溶剤などを用いたワニスの場合は、溶剤を除く固形を意味し、液状エポキシ、カップリング剤などの液状成分は、樹脂組成物に含まれる。 The content of the phenoxy resin is preferably 10% by mass or more and 40% by mass or less of the entire resin composition. By making the content of the
In addition, in the case of the varnish using a solvent etc., for example, the whole resin composition means solid except a solvent, and liquid components, such as a liquid epoxy and a coupling agent, are contained in a resin composition.
つづいて、(2)アルミニウム基板を紫外線で処理し、その後、絶縁樹脂層、金属層を形成する方法について説明する。
本実施形態の金属ベース回路基板10の製造方法は以下の工程(c)、(d)を含んでいる。
(c)アルミニウム基板12表面に紫外線を照射する工程
(d)処理後のアルミニウム基板12表面に絶縁樹脂層14を形成し、次いで絶縁樹脂層14上に金属層16を形成する工程
なお、工程(d)は、上述した工程(b)と同じ工程なので説明は省略する。 <Method of manufacturing metal base circuit board (2)>
Next, (2) a method of treating an aluminum substrate with ultraviolet rays and then forming an insulating resin layer and a metal layer will be described.
The manufacturing method of the metal
(C) Step of irradiating the surface of the
アルミニウム基板12表面に紫外線を照射する。当該処理に用いられる紫外線としては、波長が185nmまたは254nmのものを用いることができる。 (Process (c))
The surface of the
また、アルミニウム基板12表面に照射する紫外線の放射強度は、とくに限定されないが、好ましくは1.0mW/cm2以上100mW/cm2以下である。
このような紫外線処理により、アルミニウム基板12表面の水との接触角を50°以上95°以下、好ましくは55°以上90°以下に調整することができる。また、アルミニウム基板12の表面粗度(Rz)は、処理前後でほとんど変化せず、3~9μmであり、平滑である。 Integrated light quantity of ultraviolet light irradiating the aluminum surface of the
Moreover, the radiation intensity of the ultraviolet rays applied to the surface of the
By such ultraviolet treatment, the contact angle of the surface of the
(実施例1)
なお、以下の実施例1において樹脂ワニスaを用いた場合を「実施例1a」、樹脂ワニスbを用いた場合を「実施例1b」として表記する。その他の実施例、比較例についても同様である。 EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example and a comparative example, this invention is not limited to this.
Example 1
In the following Example 1, the case where the resin varnish a is used is referred to as “Example 1a”, and the case where the resin varnish b is used is referred to as “Example 1b”. The same applies to other examples and comparative examples.
ビスフェノールF骨格とビスフェノールA骨格を有するフェノキシ樹脂(三菱化学社製、4275、重量平均分子量6.0×104、ビスフェノールF骨格とビスフェノールA骨格の比率=75:25)22.0質量部、ビスフェノールFエポキシ樹脂(DIC社製、830S、エポキシ当量170)10.0質量部、ビスフェノールAエポキシ樹脂(三菱化学社製、1001、エポキシ当量475)15.0質量部、2-フェニルイミダゾール(四国化成社製2PZ)1.0質量部、シランカップリング剤としてγ―グリシドキシプロピルトリメトキシシラン(信越シリコーン社製KBM-403)2.0質量部、水酸化アルミニウム(昭和電工社製、HP-360、粒径3.0μm)50.0質量部をシクロヘキサノンに溶解・混合させ、高速撹拌装置を用い撹拌して、樹脂組成物が固形分基準で70質量%のワニスを得た。 (Preparation of resin varnish a)
Phenoxy resin having bisphenol F skeleton and bisphenol A skeleton (Mitsubishi Chemical Co., Ltd., 4275, weight average molecular weight 6.0 × 10 4 , ratio of bisphenol F skeleton to bisphenol A skeleton = 75: 25) 22.0 parts by mass, bisphenol F epoxy resin (DIC, 830S, epoxy equivalent 170) 10.0 parts by mass, bisphenol A epoxy resin (Mitsubishi Chemical Corporation, 1001, epoxy equivalent 475) 15.0 parts, 2-phenylimidazole (Shikoku Chemicals) 2PZ) 1.0 parts by mass, 2.0 parts by mass of γ-glycidoxypropyltrimethoxysilane (KBM-403 manufactured by Shin-Etsu Silicone) as a silane coupling agent, aluminum hydroxide (manufactured by Showa Denko KK, HP-360) , Particle size 3.0 μm) 50.0 parts by mass dissolved in cyclohexanone and mixed And stirred using a high speed stirrer, a resin composition was obtained 70 wt% of varnish on a solids basis.
ビスフェノールF骨格とビスフェノールA骨格を有するフェノキシ樹脂(三菱化学社製、4275、重量平均分子量6.0×104、ビスフェノールF骨格とビスフェノールA骨格の比率=75:25)22.0質量部、ビフェニル骨格エポキシ樹脂(三菱化学社製、YX4000、エポキシ当量185)10.0質量部、ビスフェノールAエポキシ樹脂(三菱化学社製、1001、エポキシ当量475)15.0質量部、2-フェニルイミダゾール(四国化成社製2PZ)1.0質量部、シランカップリング剤としてγ―グリシドキシプロピルトリメトキシシラン(信越シリコーン社製KBM-403)2.0質量部、水酸化アルミニウム(昭和電工社製、HP-360、粒径3.0μm)50.0質量部をシクロヘキサノンに溶解・混合させ、高速撹拌装置を用い撹拌して、樹脂組成物が固形分基準で70質量%のワニスを得た。 (Preparation of resin varnish b)
Phenoxy resin having bisphenol F skeleton and bisphenol A skeleton (Mitsubishi Chemical Co., Ltd., 4275, weight average molecular weight 6.0 × 10 4 , ratio of bisphenol F skeleton to bisphenol A skeleton = 75: 25) 22.0 parts by mass, biphenyl Skeletal epoxy resin (Mitsubishi Chemical Corporation, YX4000, epoxy equivalent 185) 10.0 parts by mass, bisphenol A epoxy resin (Mitsubishi Chemical Corporation, 1001, epoxy equivalent 475) 15.0 parts by mass, 2-phenylimidazole (Shikoku Chemicals) 1.0 parts by mass of 2PZ), 2.0 parts by mass of γ-glycidoxypropyltrimethoxysilane (KBM-403 manufactured by Shin-Etsu Silicone) as a silane coupling agent, aluminum hydroxide (manufactured by Showa Denko KK, HP- 360, particle size 3.0 μm) 50.0 parts by mass dissolved in cyclohexanone Was, and stirred using a high speed stirrer, a resin composition was obtained 70 wt% of varnish on a solids basis.
厚さ1mm、縦横それぞれ10cmのアルミニウム板を基板とした。表1の処理条件に従ってこの基板を所定の温度の純水に所定の時間浸漬した後、アセトンで洗浄・乾燥し、アルミニウム試験板を得た。 (Washing treatment of aluminum substrate)
An aluminum plate having a thickness of 1 mm and a length and width of 10 cm was used as a substrate. This substrate was immersed in pure water at a predetermined temperature for a predetermined time in accordance with the processing conditions shown in Table 1, and then washed and dried with acetone to obtain an aluminum test plate.
表1~3の処理条件に従ってアルミニウム板を処理し、アセトンで洗浄・乾燥し、アルミニウム試験板を得た。 (Examples 2 to 5 and Comparative Examples 1 to 8)
The aluminum plate was treated according to the treatment conditions shown in Tables 1 to 3, washed with acetone and dried to obtain an aluminum test plate.
厚さ1mm、縦横それぞれ10cmのアルミニウム板を基板とした。この基板の表面をサンドペーパー(#1500)で研磨した後、アセトンで洗浄し乾燥させアルミニウム試験板を得た。 (Reference example)
An aluminum plate having a thickness of 1 mm and a length and width of 10 cm was used as a substrate. The surface of this substrate was polished with sandpaper (# 1500), then washed with acetone and dried to obtain an aluminum test plate.
厚さ1mm、縦横それぞれ10cmのアルミニウム板を基板とした。紫外線照射装置として、低圧水銀灯(オーク社製、波長:185nm、放射強度5.0mW/cm2)を使用した。表4の処理条件に従って基板の片面に紫外線を照射し、アルミニウム試験板を得た。 (Examples 6 to 8)
An aluminum plate having a thickness of 1 mm and a length and width of 10 cm was used as a substrate. As the ultraviolet irradiation device, a low-pressure mercury lamp (manufactured by Oak Co., Ltd., wavelength: 185 nm, radiation intensity 5.0 mW / cm 2 ) was used. According to the processing conditions shown in Table 4, one side of the substrate was irradiated with ultraviolet rays to obtain an aluminum test plate.
JIS R3257に準拠して行い、5点以上の平均を接触角として算出した。
b.表面粗度(Rz)
JIS B0601に準拠して行い、十点平均粗さ(Rz)として算出した。
c.密着強度
密着性試験装置(形式:NXT-250P、富山産業株式会社製)を用い、図2のように、密着性試験装置のアルミニウム試験チップ(接着面2.0cmφ)に樹脂ワニスaまたはbを塗布し、塗布面を固定されたアルミニウム試験板に接着し、180℃60分間の硬化条件で硬化させた。そして、図2のように、アルミニウム試験チップを1.5mm/分速度で垂直方向に引き上げ、前記アルミニウム試験チップまたは前記アルミニウム試験板と前記樹脂層とが剥がれた時点を密着強度として測定した。評価結果を表1~4に示す。 a. Contact angle with water Measured according to JIS R3257, an average of 5 or more points was calculated as the contact angle.
b. Surface roughness (Rz)
It carried out based on JIS B0601 and computed as ten-point average roughness (Rz).
c. Adhesion strength Using an adhesion test device (model: NXT-250P, manufactured by Toyama Sangyo Co., Ltd.), as shown in FIG. 2, the resin varnish a or b was applied to the aluminum test chip (adhesion surface 2.0 cmφ) of the adhesion test device. It was applied, and the coated surface was adhered to a fixed aluminum test plate and cured under a curing condition of 180 ° C. for 60 minutes. Then, as shown in FIG. 2, the aluminum test chip was pulled up at a rate of 1.5 mm / min in the vertical direction, and the time when the aluminum test chip or the aluminum test plate and the resin layer were peeled was measured as the adhesion strength. The evaluation results are shown in Tables 1 to 4.
以上のように、アルミニウム基板の表面が平滑(表面粗度(Rz):3~9μm)であっても、アルミニウム基板表面の水との接触角が50°以上95°以下であることにより、アルミニウム基板と絶縁樹脂層との密着強度に優れ、さらに半田耐熱性、耐屈曲性にも優れることが推測された。したがって、これを用いた各種装置の歩留まりを向上させることが明らかとなった。 In Comparative Examples 7a, 7b, 8a, and 8b in Table 3, the adhesion strength was not measured because it was presumed that the adhesion strength was clearly low from the results of separate bending tests.
As described above, even when the surface of the aluminum substrate is smooth (surface roughness (Rz): 3 to 9 μm), the contact angle with water on the surface of the aluminum substrate is 50 ° or more and 95 ° or less. It was estimated that the adhesion strength between the substrate and the insulating resin layer was excellent, and that the solder heat resistance and bending resistance were also excellent. Therefore, it has been clarified that the yield of various devices using this is improved.
Claims (16)
- アルミニウム基板と、絶縁樹脂層と、金属層とが順に積層されてなる金属ベース回路基板であって、
前記アルミニウム基板表面の水との接触角が50°以上95°以下であり、
表面粗度(Rz)が3μm以上9μm以下である、金属ベース回路基板。 A metal base circuit board in which an aluminum substrate, an insulating resin layer, and a metal layer are sequentially laminated,
The contact angle of the aluminum substrate surface with water is 50 ° or more and 95 ° or less,
A metal-based circuit board having a surface roughness (Rz) of 3 μm or more and 9 μm or less. - 請求項1に記載の金属ベース回路基板において、
以下の条件で測定された、前記アルミニウム基板と前記絶縁樹脂層との密着強度が20kg/cm2以上50kg/cm2以下である、金属ベース回路基板;
・アルミニウム試験チップ(円盤状、接着面2.0cmφ)に、前記絶縁樹脂層を得るための樹脂ワニスを塗布し、塗布面を固定されたアルミニウム試験板に接着する。180℃60分間の条件で前記樹脂ワニスを硬化させ、前記アルミニウム試験チップと前記アルミニウム試験板とを樹脂層を介して接着させる。
・アルミニウム試験チップを1.5mm/分速度で垂直方向に引き上げ、前記アルミニウム試験チップまたは前記アルミニウム試験板と前記樹脂層とが剥がれた時点を密着強度として測定する。 The metal base circuit board according to claim 1,
A metal base circuit board having an adhesion strength between the aluminum substrate and the insulating resin layer of 20 kg / cm 2 or more and 50 kg / cm 2 or less, measured under the following conditions;
A resin varnish for obtaining the insulating resin layer is applied to an aluminum test chip (disc-shaped, bonding surface 2.0 cmφ), and the coated surface is bonded to a fixed aluminum test plate. The resin varnish is cured under conditions of 180 ° C. for 60 minutes, and the aluminum test chip and the aluminum test plate are bonded via a resin layer.
-The aluminum test chip is pulled up in the vertical direction at a speed of 1.5 mm / min, and the time when the aluminum test chip or the aluminum test plate and the resin layer are peeled is measured as the adhesion strength. - 請求項1または2に記載の金属ベース回路基板において、
前記絶縁樹脂層は、常温で液状のビスフェノールF型またはA型のエポキシ樹脂の硬化物を含む、金属ベース回路基板。 The metal base circuit board according to claim 1 or 2,
The said insulating resin layer is a metal base circuit board containing the hardened | cured material of the bisphenol F type or A type epoxy resin which is liquid at normal temperature. - 請求項1乃至3いずれか一項に記載の金属ベース回路基板において、
前記絶縁樹脂層は、フェノキシ樹脂およびゴム成分から選択される1種以上の可とう性付与成分を含む、金属ベース回路基板。 The metal base circuit board according to any one of claims 1 to 3,
The said insulating resin layer is a metal base circuit board containing 1 or more types of flexibility provision components selected from a phenoxy resin and a rubber component. - 請求項4に記載の金属ベース回路基板において、
前記可とう性付与成分の含有量は、前記絶縁樹脂層100質量%に対して10質量%以上40質量%以下である、金属ベース回路基板。 The metal base circuit board according to claim 4,
Content of the said flexibility provision component is a metal base circuit board which is 10 to 40 mass% with respect to 100 mass% of said insulating resin layers. - 請求項1乃至5いずれか一項に記載の金属ベース回路基板において、
前記アルミニウム基板はカップリング剤で表面処理されていない、金属ベース回路基板。 The metal base circuit board according to any one of claims 1 to 5,
The aluminum substrate is a metal-based circuit board that is not surface-treated with a coupling agent. - 請求項1乃至6いずれか一項に記載の金属ベース回路基板において、
前記絶縁樹脂層は、無機フィラーと、シランカップリング剤と、を含み、
前記絶縁樹脂層の合計量100質量%に対する前記シランカップリング剤の含有量をc質量%とし、
前記絶縁樹脂層の合計量100質量%に対する前記無機フィラーの含有量をb質量%としたとき、
5×10-2<c-(b×1/100)<11
を満たす、金属ベース回路基板。 The metal base circuit board according to any one of claims 1 to 6,
The insulating resin layer includes an inorganic filler and a silane coupling agent,
The content of the silane coupling agent with respect to a total amount of 100% by mass of the insulating resin layer is c% by mass,
When the content of the inorganic filler with respect to 100% by mass of the total amount of the insulating resin layer is b% by mass,
5 × 10 −2 <c− (b × 1/100) <11
Meet the metal base circuit board. - 請求項7に記載の金属ベース回路基板において、
前記無機フィラーが水酸化アルミニウム、水酸化マグネシウムまたはアルミナである、金属ベース回路基板。 The metal base circuit board according to claim 7,
A metal-based circuit board, wherein the inorganic filler is aluminum hydroxide, magnesium hydroxide or alumina. - 請求項1乃至8いずれか一項に記載の金属ベース回路基板の製造方法であって、
前記アルミニウム基板を50℃以上80℃以下の水に0.5分間以上3分間以下接触させる工程と、
処理後の前記アルミニウム基板表面に前記絶縁樹脂層を形成し、次いで前記絶縁樹脂層上に前記金属層を形成する工程と
を含む、金属ベース回路基板の製造方法。 A method of manufacturing a metal base circuit board according to any one of claims 1 to 8,
Contacting the aluminum substrate with water at 50 ° C. or more and 80 ° C. or less for 0.5 minutes or more and 3 minutes or less;
Forming the insulating resin layer on the surface of the aluminum substrate after processing, and then forming the metal layer on the insulating resin layer. - 請求項9に記載の金属ベース回路基板の製造方法において、
前記アルミニウム基板はカップリング剤で表面処理されていない、金属ベース回路基板の製造方法。 In the manufacturing method of the metal base circuit board of Claim 9,
The method of manufacturing a metal base circuit board, wherein the aluminum substrate is not surface-treated with a coupling agent. - 請求項1乃至8いずれか一項に記載の金属ベース回路基板の製造方法であって、
前記アルミニウム基板表面に紫外線を照射する工程と、
前記紫外線を照射後の前記アルミニウム基板表面に前記絶縁樹脂層を形成し、次いで前記絶縁樹脂層上に前記金属層を形成する工程と
を含む、金属ベース回路基板の製造方法。 A method of manufacturing a metal base circuit board according to any one of claims 1 to 8,
Irradiating the aluminum substrate surface with ultraviolet rays;
Forming the insulating resin layer on the surface of the aluminum substrate after irradiation with the ultraviolet light, and then forming the metal layer on the insulating resin layer. - 請求項11に記載の金属ベース回路基板の製造方法において、
前記紫外線の波長が185nmまたは254nmである、金属ベース回路基板の製造方法。 In the manufacturing method of the metal base circuit board of Claim 11,
A method for producing a metal base circuit board, wherein the wavelength of the ultraviolet light is 185 nm or 254 nm. - 請求項11または12に記載の金属ベース回路基板の製造方法において、
前記アルミニウム基板表面に照射する前記紫外線の積算光量が0.1J/cm2以上1.0J/cm2以下である、金属ベース回路基板の製造方法。 In the manufacturing method of the metal base circuit board of Claim 11 or 12,
It said aluminum integral light quantity of the ultraviolet rays irradiated to the substrate surface is 0.1 J / cm 2 or more 1.0 J / cm 2 or less, the production method of the metal base circuit board. - 請求項11乃至13いずれか一項に記載の金属ベース回路基板の製造方法において、
前記アルミニウム基板はカップリング剤で表面処理されていない、金属ベース回路基板の製造方法。 In the manufacturing method of the metal base circuit board as described in any one of Claims 11 thru | or 13,
The method of manufacturing a metal base circuit board, wherein the aluminum substrate is not surface-treated with a coupling agent. - 請求項1乃至8いずれか一項に記載の金属ベース回路基板に用いられるアルミニウム基板の処理方法であって、
前記アルミニウム基板を50℃以上80℃以下の水に0.5分間以上3分間以下接触させる、金属ベース回路基板用アルミニウム基板の処理方法。 A method for treating an aluminum substrate used in a metal base circuit board according to any one of claims 1 to 8,
A method for treating an aluminum substrate for a metal base circuit board, comprising bringing the aluminum substrate into contact with water at 50 ° C. or more and 80 ° C. or less for 0.5 minutes or more and 3 minutes or less. - 請求項1乃至8いずれか一項に記載の金属ベース回路基板に用いられるアルミニウム基板の処理方法であって、
前記アルミニウム基板表面に照射する前記紫外線の積算光量が0.1J/cm2以上1.0J/cm2以下である、金属ベース回路基板用アルミニウム基板の処理方法。 A method for treating an aluminum substrate used in a metal base circuit board according to any one of claims 1 to 8,
The integrated quantity of ultraviolet light is 0.1 J / cm 2 or more 1.0 J / cm 2 or less, the processing method of an aluminum substrate metal base circuit board to be irradiated to the aluminum substrate surface.
Priority Applications (3)
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KR1020137019385A KR20130132560A (en) | 2010-12-28 | 2011-09-29 | Metal base circuit board, and method for producing metal base circuit board |
CN201180063612XA CN103283313A (en) | 2010-12-28 | 2011-09-29 | Metal base circuit board, and method for producing metal base circuit board |
JP2012550678A JP5870934B2 (en) | 2010-12-28 | 2011-09-29 | Method for manufacturing metal-based circuit board |
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KR (1) | KR20130132560A (en) |
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WO2015056523A1 (en) * | 2013-10-17 | 2015-04-23 | 住友ベークライト株式会社 | Epoxy-resin composition, carrier material with resin layer, metal-based circuit board, and electronic device |
WO2015163055A1 (en) * | 2014-04-21 | 2015-10-29 | 住友ベークライト株式会社 | Metal-based substrate, method for manufacturing metal-based substrate, metal-based circuit board, and electronic device |
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JP2016039042A (en) * | 2014-08-08 | 2016-03-22 | 株式会社日立製作所 | Insulated wire, rotary electric machine and method for producing insulated wire |
CN115348737A (en) * | 2022-08-12 | 2022-11-15 | 江苏迪飞达电子有限公司 | Preparation method of double-sided thick copper-aluminum-based mixed pressing plate |
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JP5659379B1 (en) * | 2014-09-04 | 2015-01-28 | 東洋インキScホールディングス株式会社 | Printed wiring board |
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CN115348737A (en) * | 2022-08-12 | 2022-11-15 | 江苏迪飞达电子有限公司 | Preparation method of double-sided thick copper-aluminum-based mixed pressing plate |
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JP5870934B2 (en) | 2016-03-01 |
KR20130132560A (en) | 2013-12-04 |
TW201234940A (en) | 2012-08-16 |
JPWO2012090360A1 (en) | 2014-06-05 |
CN103283313A (en) | 2013-09-04 |
TWI527504B (en) | 2016-03-21 |
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