WO2012086701A1 - 太陽電池素子の製造方法及び太陽電池素子 - Google Patents
太陽電池素子の製造方法及び太陽電池素子 Download PDFInfo
- Publication number
- WO2012086701A1 WO2012086701A1 PCT/JP2011/079671 JP2011079671W WO2012086701A1 WO 2012086701 A1 WO2012086701 A1 WO 2012086701A1 JP 2011079671 W JP2011079671 W JP 2011079671W WO 2012086701 A1 WO2012086701 A1 WO 2012086701A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- screen printing
- cell element
- collector electrode
- squeegee speed
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title abstract description 22
- 238000007650 screen-printing Methods 0.000 claims abstract description 46
- 238000007639 printing Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
- B41P2215/00—Screen printing machines
- B41P2215/50—Screen printing machines for particular purposes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a method for manufacturing a solar cell element and a solar cell element obtained thereby.
- a conventional solar cell element has a structure shown in FIG.
- 1 is, for example, a plate shape having a size of 100 to 150 mm square and a thickness of 0.1 to 0.3 mm, and is made of polycrystalline, single crystal silicon, etc., and doped with p-type impurities such as boron.
- P-type semiconductor substrate The substrate 1 is doped with an n-type impurity such as phosphorus to form an n-type diffusion layer 2, an antireflection film 3 such as SiN (silicon nitride) is provided, and a conductive aluminum is formed on the back surface by screen printing.
- the back electrode 6 and the BSF (Back Surface Field) layer 4 are formed at the same time by drying and firing, and after the conductive silver paste is printed on the surface, it is dried and fired, and the collector electrode (surface electrode) ) 5 is produced.
- the surface of the substrate that is the light receiving surface side of the solar cell is referred to as the front surface
- the surface of the substrate that is opposite to the light receiving surface side is referred to as the back surface.
- the thickness of 30 ⁇ m is the limit with respect to the line width of 100 ⁇ m in one printing process, and the thickness variation is large. For this reason, resistance becomes high and becomes a factor which inhibits the improvement of conversion efficiency.
- the screen mesh pattern to be used is different for each of the plurality of screen printing processes.
- the solar cell element manufactured by such a method generally has a structure shown in FIG. By performing the overlay printing, the height of the surface electrode is increased.
- reference numeral 7 denotes a second surface electrode.
- the degree of elongation when printing pressure is applied differs depending on the pattern, which adversely affects printing accuracy and makes it difficult to accurately superimpose the collector electrodes.
- the collector electrode is displaced, resulting in a decrease in the conversion efficiency of the solar cell element and a problem in appearance due to partial thickening of the collector electrode.
- the present invention has been made in view of the above circumstances, and is capable of accurately printing the collector electrode, reducing the resistance value, having good electrical characteristics, and shortening the manufacturing tact. It aims at providing the solar cell element which can be manufactured, and its manufacturing method.
- the present inventors have determined that the squeegee speed during the second and subsequent screen printing is the same as the squeegee during the first screen printing. It has been found that the resistance value of the collector electrode can be reduced by making it faster than the speed. As a result, it is possible to further shorten the manufacturing tact without causing a deviation of the collecting electrode due to a pattern change of the screen mesh, and further reduce the manufacturing tact without impairing such reliability and appearance. It has been found that forming a collecting electrode by a screen printing method that can be advantageous for manufacturing a solar cell element, and has led to the present invention.
- the present invention provides a method for producing a solar cell element having a collector electrode, wherein the collector electrode is formed by performing a plurality of screen printing overlays of a conductive paste at the collector electrode forming position, A method of manufacturing a solar cell element characterized by performing a squeegee speed at the time of the second and subsequent screen printing at a speed equal to or higher than a squeegee speed at the time of the first screen printing in the multiple overprinting of the paste, and obtained thereby A solar cell element is provided.
- the result of subtracting the value of the squeegee speed at the first screen printing from the value of the squeegee speed at the second and subsequent screen printings is 0 mm / second or more and 300 mm / second or less.
- the collector electrode printing is performed at the second and subsequent times at a speed equal to or higher than the first collector electrode printing speed, thereby impairing reliability and appearance. Not only can the electrical characteristics of the solar cell be improved, but also the manufacturing cycle of the solar cell element can be shortened. This can be widely used in a method for manufacturing a solar cell element having high electrical characteristics.
- FIG. 1 is a cross-sectional view showing a general structure of a solar cell element.
- 1 is a semiconductor substrate
- 2 is a diffusion layer (diffusion region)
- 3 is an antireflection film / passivation film
- 4 is a BSF layer
- 5 is a collector electrode (front electrode)
- 6 is a back electrode.
- the semiconductor substrate 1 is prepared.
- the semiconductor substrate 1 is made of single crystal or polycrystalline silicon, and may be either p-type or n-type.
- a p-type silicon substrate containing p-type semiconductor impurities such as boron and having a specific resistance of 0.1 to 4.0 ⁇ ⁇ cm is often used.
- a method for manufacturing a solar cell element using a p-type silicon substrate will be described as an example.
- a plate-shaped member having a size of 100 to 150 mm square and a thickness of 0.05 to 0.30 mm is preferably used.
- the surface of the p-type silicon substrate serving as the light-receiving surface of the solar cell element is immersed in an acidic solution, for example, to remove surface damage caused by slicing, etc., and further cleaned and dried by chemical etching with an alkaline solution.
- an uneven structure called a texture is formed.
- the concavo-convex structure causes multiple reflection of light on the light receiving surface of the solar cell element. Therefore, by forming the concavo-convex structure, the reflectance is effectively reduced and the conversion efficiency is improved.
- a sheet resistance is formed by a thermal diffusion method in which a p-type silicon substrate is placed in a high-temperature gas of about 850 ° C. or more containing, for example, POCl 3 , and an n-type impurity element such as phosphorus is diffused over the entire surface of the p-type silicon substrate.
- An n-type diffusion layer 2 having a thickness of about 30 to 300 ⁇ / ⁇ is formed on the surface.
- the n-type diffusion layer may be formed on both surfaces and the end surface of the p-type silicon substrate.
- An unnecessary n-type diffusion layer can be removed by immersing a p-type silicon substrate whose surface is covered with an acid-resistant resin in a hydrofluoric acid solution. Thereafter, the glass layer formed on the surface of the semiconductor substrate at the time of diffusion is removed by immersing in a chemical such as a diluted hydrofluoric acid solution, and washed with pure water.
- an antireflection film / passivation film 3 is formed on the surface side of the p-type silicon substrate.
- This anti-reflection film and passivation film is made of, for example, SiN, and is formed by, for example, a plasma CVD method in which a mixed gas of SiH 4 and NH 3 is diluted with N 2 , and plasma is deposited by glow discharge decomposition. .
- This antireflection film / passivation film is formed so as to have a refractive index of about 1.8 to 2.3 in consideration of a difference in refractive index from the p-type silicon substrate, and has a thickness of about 500 to 1,000 mm.
- this SiN also functions as a passivation film that has a passivation effect on the n-type diffusion layer when formed, and has the effect of improving the electrical characteristics of the solar cell element together with the antireflection function.
- a conductive paste containing, for example, aluminum, glass frit, varnish and the like is screen printed on the back surface and dried.
- a conductive paste containing, for example, silver, glass frit and varnish is screen printed on the surface and dried.
- each electrode paste is baked at a temperature of about 500 to 950 ° C. to form the BSF layer 4, the front surface electrode (that is, the collector electrode) 5, and the back surface electrode 6.
- a solar cell element having high electrical characteristics cannot be obtained because the resistance value of the collector electrode is high.
- a plurality of screen printings of the conductive paste at the collector electrode forming position are performed at a squeegee speed faster than the first squeegee speed. It is characterized in that the electrical characteristics of the solar cell element are enhanced by forming by performing the process once. The improvement of electrical characteristics by the screen printing process is due to the following reasons.
- the squeegee speed is 50 to 300 mm / second when the collector electrode is formed for the first time with a conductive paste containing silver or the like. If it is slower than this, there arises a problem that the separation of the paste between the silicon substrate, which is the printing object, and the paste is deteriorated, and the paste is blurred or the film thickness becomes uneven. On the other hand, if it is faster than this, the plate separation will occur rapidly, and the paste will not be sufficiently transferred to the silicon substrate, causing the problem that the collector electrode will be faded or the film thickness will be thin.
- the collector electrode is formed by the second and subsequent screen printing
- the printed object is not the silicon substrate but the first collector electrode, so the printing object and the paste are separated from each other. Different from the first time.
- the first-layer collector electrode has a rough surface, and the varnish contained in the paste is easy to become familiar with. Therefore, printing with a faster squeegee speed than when the first collector electrode is printed improves the separation between the paste and the base plate, increases the amount of paste applied, and results in a thick collector electrode. Thus, the resistance value is reduced, and the electrical characteristics of the solar cell element can be enhanced.
- the result of subtracting the value of the squeegee speed at the first screen printing from the value of the squeegee speed at the second and subsequent screen printing is 0 mm / second or more and 300 mm / second or less, preferably 10 mm / second to 100 mm / sec, more preferably 40 mm / sec to 80 mm / sec.
- the difference from the squeegee speed at the previous screen printing is also preferably 10 mm / second to 100 mm / second, more preferably 40 mm / second to 80 mm / second.
- the screen mesh pattern used for screen printing is preferably the same for each screen printing.
- the collector electrode formed by each screen printing is preferably formed to have a thickness of 5 to 50 ⁇ m, particularly 8 to 35 ⁇ m, and the total thickness of the collector electrode is 3
- it is preferably formed to have a thickness of 25 to 70 ⁇ m, and in the case of forming a four layer, the thickness is 30 to 90 ⁇ m.
- a known ink such as a known conductive silver paste can be used, and screen printing can be performed by a conventional method except that the squeegee speed is adjusted as described above. .
- Example 1 First, by performing outer diameter processing on a p-type silicon substrate made of p-type single crystal silicon having a specific resistance of about 1 ⁇ ⁇ cm, which is doped with boron and sliced to a thickness of 0.2 mm, a side of 15 cm is formed. A square plate was formed. Then, this p-type silicon substrate is immersed in a hydrofluoric acid solution for 15 seconds for damage etching, and further chemically etched with a 70 ° C. solution containing 2% by mass of KOH and 2% by mass of IPA, and then with pure water. By washing and drying, a textured structure was formed on the p-type silicon substrate surface.
- an n layer was formed on the p-type silicon substrate by a thermal diffusion method in a POCl 3 gas atmosphere at a temperature of 870 ° C. for 30 minutes.
- the sheet resistance of the n layer was about 40 ⁇ / ⁇ , and the depth was 0.4 ⁇ m.
- the p-type silicon substrate was immersed in a hydrofluoric acid solution for 10 seconds to remove the portion of the n layer where the acid resistant resin was not formed. Thereafter, the acid-resistant resin was removed to form an n layer only on the surface of the p-type silicon substrate.
- SiN serving as an antireflection film and a passivation film is formed on the surface of the p-type silicon substrate on which the n layer is formed by plasma CVD using SiH 4 , NH 3 , and N 2. Formed with. Next, a conductive aluminum paste was printed on the back surface of the p-type silicon substrate and dried at 150 ° C.
- a collecting electrode was formed to 20 ⁇ m at a squeegee speed of 150 mm / sec on a surface of the p-type silicon substrate by screen printing using a screen printing method, and dried at 150 ° C. Further, a comparative example in which the overlapping printing of the collecting electrode was performed at 100 mm / second and an example in which the printing was performed at 200 mm / second were prepared and dried at 150 ° C. to obtain a final printed electrode thickness of 30 ⁇ m.
- the solar cell element was produced by throwing the conductive paste at a maximum temperature of 800 ° C. to form an electrode by putting the processed substrate so far into a firing furnace. The electrical characteristics and printing tact time of these solar cell elements were measured.
- Table 1 shows the average of the electrical characteristics and the printing tact time of the solar cell elements when 10 solar cell elements were produced for each of the example and the comparative example by the above method.
- Example 2 A p-type silicon substrate was produced in the same manner as in Example 1, and a collector electrode was formed on the surface by a screen printing method using a conductive silver paste.
- the first layer forms 20 ⁇ m at a squeegee speed of 150 mm / sec
- the second layer forms 12 ⁇ m at a squeegee speed of 200 mm / sec
- the third layer forms 8 ⁇ m at a squeegee speed of 250 mm / sec
- the thickness of the printed electrode was 40 ⁇ m.
- Table 2 shows the electrical characteristics and printing tact time of the obtained solar cell element.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
このようなスクリーン印刷法による集電極形成にあっては、1回の印刷処理で100μmの線幅に対して30μmの厚さが限界であり、厚みのばらつきも大きい。このため、抵抗が高くなってしまい、変換効率の向上を阻害する要因となっている。
この場合、前記二回目以降のスクリーン印刷時のスキージ速度の値から、一回目のスクリーン印刷時のスキージ速度の値を引いた結果が、0mm/秒以上300mm/秒以下であることが好ましい。
まず、半導体基板1を用意する。この半導体基板1は、単結晶又は多結晶シリコンなどからなり、p型、n型のいずれでもよい。半導体基板1は、ボロンなどのp型の半導体不純物を含み、比抵抗は0.1~4.0Ω・cmのp型シリコン基板が用いられることが多い。
以下、p型シリコン基板を用いた太陽電池素子の製造方法を例にとって説明する。大きさは100~150mm角、厚みは0.05~0.30mmの板状のものが好適に用いられる。そして、太陽電池素子の受光面となるp型シリコン基板の表面に、例えば酸性溶液中に浸漬してスライスなどによる表面のダメージを除去してから、更にアルカリ溶液で化学エッチングして洗浄、乾燥することで、テクスチャとよばれる凹凸構造を形成する。凹凸構造は、太陽電池素子受光面において光の多重反射を生じさせる。そのため、凹凸構造を形成することにより、実効的に反射率が低減し、変換効率が向上する。
この場合、前記二回目以降のスクリーン印刷時のスキージ速度の値から、一回目のスクリーン印刷時のスキージ速度の値を引いた結果が、0mm/秒以上300mm/秒以下、好ましくは10mm/秒~100mm/秒、更に好ましくは40mm/秒~80mm/秒である。
また、三回目以降のスクリーン印刷を行う場合、その前のスクリーン印刷時のスキージ速度との差も同様に、好ましくは10mm/秒~100mm/秒、更に好ましくは40mm/秒~80mm/秒である。
更に、スクリーン印刷に用いるスクリーンメッシュのパターンは、各回のスクリーン印刷において同じとすることが好ましい。
まず、ボロンがドープされ、厚さ0.2mmにスライスして作製された比抵抗が約1Ω・cmのp型の単結晶シリコンからなるp型シリコン基板に外径加工を行うことによって、一辺15cm角の正方形の板状とした。そして、このp型シリコン基板をフッ硝酸溶液中に15秒間浸漬させてダメージエッチングし、更に2質量%のKOHと2質量%のIPAを含む70℃の溶液で5分間化学エッチングした後に純水で洗浄し、乾燥させることで、p型シリコン基板表面にテクスチャ構造を形成した。次に、このp型シリコン基板に対し、POCl3ガス雰囲気中において、870℃の温度で30分間の条件で熱拡散法により、p型シリコン基板にn層を形成した。ここで、n層のシート抵抗は約40Ω/□、深さは0.4μmであった。そして、n層上に耐酸性樹脂を形成した後に、p型シリコン基板をフッ硝酸溶液中に10秒間浸漬することによって、耐酸性樹脂が形成されていない部分のn層を除去した。その後、耐酸性樹脂を除去することによって、p型シリコン基板の表面のみにn層を形成した。続いて、SiH4とNH3、N2を用いたプラズマCVD法により、p型シリコン基板のn層が形成されている表面上に、反射防止膜兼パッシベーション膜となるSiNを厚さ1,000Åで形成した。次に、p型シリコン基板の裏面に、導電性アルミニウムペーストを印刷し、150℃で乾燥させた。
実施例1と同様にしてp型シリコン基板を作製し、表面にスクリーン印刷法により、導電性銀ペーストを用いて集電極を形成した。この場合、一層目はスキージ速度150mm/秒で20μmを形成し、二層目はスキージ速度200mm/秒で12μmを形成し、三層目はスキージ速度250mm/秒で8μmを形成し、その最終的な印刷電極厚みは40μmとした。
得られた太陽電池素子の電気特性と印刷タクトタイムは表2の通りであった。
なお、比較のため、一層目のスキージ速度150mm/秒、二層目のスキージ速度100mm/秒、三層目のスキージ速度90mm/秒で総厚み40μmの電極を印刷、形成した。得られた電気特性と印刷タクトタイムの結果を表2に示す。
Claims (4)
- 集電極を有する太陽電池素子の製造方法であって、前記集電極の形成を、集電極形成位置における導電性ペーストのスクリーン印刷の重ね合わせを複数回行うと共に、該導電性ペーストの複数回の重ね印刷において、二回目以降のスクリーン印刷時のスキージ速度を一回目のスクリーン印刷時のスキージ速度以上で行うことを特徴とする太陽電池素子の製造方法。
- 前記二回目以降のスクリーン印刷時のスキージ速度の値から、一回目のスクリーン印刷時のスキージ速度の値を引いた結果が、0mm/秒以上300mm/秒以下であることを特徴とする請求項1記載の太陽電池素子の製造方法。
- 前記二回目以降のスクリーン印刷時のスキージ速度の値から、一回目のスクリーン印刷時のスキージ速度の値を引いた結果が、10mm/秒以上100mm/秒以下であることを特徴とする請求項2記載の太陽電池素子の製造方法。
- 請求項1、2又は3記載の製造方法によって得られる太陽電池素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137019353A KR101849400B1 (ko) | 2010-12-24 | 2011-12-21 | 태양전지 소자의 제조 방법 및 태양전지 소자 |
JP2012549852A JP5482911B2 (ja) | 2010-12-24 | 2011-12-21 | 太陽電池素子の製造方法 |
EP11850435.6A EP2657979B1 (en) | 2010-12-24 | 2011-12-21 | Method for manufacturing solar cell element |
CA2822592A CA2822592A1 (en) | 2010-12-24 | 2011-12-21 | Method for manufacturing solar cell element and solar cell element |
US13/997,341 US10439094B2 (en) | 2010-12-24 | 2011-12-21 | Method for manufacturing solar cell element and solar cell element |
SG2013048988A SG191350A1 (en) | 2010-12-24 | 2011-12-21 | Method for manufacturing solar cell element and solar cell element |
CN201180066540.4A CN103348489B (zh) | 2010-12-24 | 2011-12-21 | 太阳能电池元件的制造方法及太阳能电池元件 |
RU2013134467/28A RU2570814C2 (ru) | 2010-12-24 | 2011-12-21 | Способ изготовления солнечного элемента и солнечный элемент |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-288062 | 2010-12-24 | ||
JP2010288062 | 2010-12-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012086701A1 true WO2012086701A1 (ja) | 2012-06-28 |
Family
ID=46313969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/079671 WO2012086701A1 (ja) | 2010-12-24 | 2011-12-21 | 太陽電池素子の製造方法及び太陽電池素子 |
Country Status (11)
Country | Link |
---|---|
US (1) | US10439094B2 (ja) |
EP (1) | EP2657979B1 (ja) |
JP (1) | JP5482911B2 (ja) |
KR (1) | KR101849400B1 (ja) |
CN (1) | CN103348489B (ja) |
CA (1) | CA2822592A1 (ja) |
MY (1) | MY166077A (ja) |
RU (1) | RU2570814C2 (ja) |
SG (1) | SG191350A1 (ja) |
TW (1) | TWI532200B (ja) |
WO (1) | WO2012086701A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413867A (zh) * | 2013-08-23 | 2013-11-27 | 英利能源(中国)有限公司 | 太阳能电池的扩散制结方法、太阳能电池及其制作方法 |
US9553228B2 (en) * | 2013-05-17 | 2017-01-24 | Kaneka Corporation | Solar cell, production method therefor, and solar cell module |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI556455B (zh) * | 2014-03-04 | 2016-11-01 | 茂迪股份有限公司 | 太陽能電池、其模組及其製造方法 |
CN107408583B (zh) * | 2015-02-13 | 2019-09-03 | 株式会社钟化 | 太阳能电池及其制造方法和太阳能电池组件 |
FI128685B (en) | 2016-09-27 | 2020-10-15 | Teknologian Tutkimuskeskus Vtt Oy | Layered device and its manufacturing method |
CN115084287B (zh) * | 2022-05-11 | 2024-03-29 | 通威太阳能(成都)有限公司 | 一种栅线的制备方法及太阳能电池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010090211A (ja) * | 2008-10-06 | 2010-04-22 | Mitsubishi Materials Corp | 導電性インク組成物及びこれを用いた電極の形成方法 |
JP2010103572A (ja) | 2010-02-08 | 2010-05-06 | Sanyo Electric Co Ltd | 太陽電池素子の製造方法及び太陽電池素子 |
JP2010161178A (ja) * | 2009-01-07 | 2010-07-22 | Mitsubishi Electric Corp | 太陽電池とその製造方法 |
JP2010199034A (ja) * | 2009-02-27 | 2010-09-09 | Dic Corp | 太陽電池用導電性ペースト及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091019A (en) * | 1997-09-26 | 2000-07-18 | Sanyo Electric Co., Ltd. | Photovoltaic element and manufacturing method thereof |
WO2005109524A1 (ja) | 2004-05-07 | 2005-11-17 | Mitsubishi Denki Kabushiki Kaisha | 太陽電池及びその製造方法 |
JP2006339342A (ja) * | 2005-06-01 | 2006-12-14 | Shin Etsu Handotai Co Ltd | 太陽電池および太陽電池の製造方法 |
US20070158621A1 (en) * | 2005-07-19 | 2007-07-12 | Kyocera Corporation | Conductive Paste, Solar Cell Manufactured Using Conductive Paste, Screen Printing Method and Solar Cell Formed Using Screen Printing Method |
KR101444980B1 (ko) * | 2008-03-19 | 2014-09-29 | 산요덴키가부시키가이샤 | 태양 전지 및 그 제조 방법 |
JP4986945B2 (ja) * | 2008-07-25 | 2012-07-25 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP4754655B2 (ja) * | 2008-08-07 | 2011-08-24 | 京都エレックス株式会社 | 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法 |
WO2010135496A1 (en) * | 2009-05-20 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Process of forming a grid electrode on the front-side of a silicon wafer |
US20110214718A1 (en) * | 2010-03-02 | 2011-09-08 | E.I. Du Pont De Nemours And Company | Manufacturing of electrode |
-
2011
- 2011-12-21 SG SG2013048988A patent/SG191350A1/en unknown
- 2011-12-21 WO PCT/JP2011/079671 patent/WO2012086701A1/ja active Application Filing
- 2011-12-21 KR KR1020137019353A patent/KR101849400B1/ko active IP Right Grant
- 2011-12-21 RU RU2013134467/28A patent/RU2570814C2/ru active
- 2011-12-21 MY MYPI2013002331A patent/MY166077A/en unknown
- 2011-12-21 EP EP11850435.6A patent/EP2657979B1/en active Active
- 2011-12-21 US US13/997,341 patent/US10439094B2/en active Active
- 2011-12-21 CA CA2822592A patent/CA2822592A1/en not_active Abandoned
- 2011-12-21 JP JP2012549852A patent/JP5482911B2/ja active Active
- 2011-12-21 CN CN201180066540.4A patent/CN103348489B/zh active Active
- 2011-12-23 TW TW100148347A patent/TWI532200B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010090211A (ja) * | 2008-10-06 | 2010-04-22 | Mitsubishi Materials Corp | 導電性インク組成物及びこれを用いた電極の形成方法 |
JP2010161178A (ja) * | 2009-01-07 | 2010-07-22 | Mitsubishi Electric Corp | 太陽電池とその製造方法 |
JP2010199034A (ja) * | 2009-02-27 | 2010-09-09 | Dic Corp | 太陽電池用導電性ペースト及びその製造方法 |
JP2010103572A (ja) | 2010-02-08 | 2010-05-06 | Sanyo Electric Co Ltd | 太陽電池素子の製造方法及び太陽電池素子 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2657979A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9553228B2 (en) * | 2013-05-17 | 2017-01-24 | Kaneka Corporation | Solar cell, production method therefor, and solar cell module |
CN103413867A (zh) * | 2013-08-23 | 2013-11-27 | 英利能源(中国)有限公司 | 太阳能电池的扩散制结方法、太阳能电池及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2657979B1 (en) | 2017-08-30 |
CN103348489A (zh) | 2013-10-09 |
US10439094B2 (en) | 2019-10-08 |
JPWO2012086701A1 (ja) | 2014-05-22 |
RU2013134467A (ru) | 2015-01-27 |
KR101849400B1 (ko) | 2018-04-17 |
RU2570814C2 (ru) | 2015-12-10 |
JP5482911B2 (ja) | 2014-05-07 |
CN103348489B (zh) | 2016-05-18 |
EP2657979A4 (en) | 2014-05-07 |
MY166077A (en) | 2018-05-23 |
TWI532200B (zh) | 2016-05-01 |
EP2657979A1 (en) | 2013-10-30 |
CA2822592A1 (en) | 2012-06-28 |
SG191350A1 (en) | 2013-08-30 |
US20130284263A1 (en) | 2013-10-31 |
KR20140014120A (ko) | 2014-02-05 |
TW201242040A (en) | 2012-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5440433B2 (ja) | 太陽電池の製造方法及び製膜装置 | |
JP4481869B2 (ja) | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 | |
JP5482911B2 (ja) | 太陽電池素子の製造方法 | |
WO2006117975A1 (ja) | 太陽電池の製造方法及び太陽電池 | |
EP3101696B1 (en) | Solar cell and solar cell manufacturing method | |
JP2011159783A (ja) | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール | |
JP6644884B2 (ja) | 太陽電池、太陽電池の製造システムおよび太陽電池の製造方法 | |
JP2010118473A (ja) | 太陽電池セルおよびその製造方法 | |
JP5477233B2 (ja) | 太陽電池の製造方法 | |
JP2011061109A (ja) | 太陽電池素子の製造方法及び太陽電池素子 | |
JP6392717B2 (ja) | 太陽電池セルの製造方法 | |
JP2006245502A (ja) | 太陽電池セルおよびその製造方法 | |
JP6176195B2 (ja) | 太陽電池 | |
JP5494511B2 (ja) | 太陽電池の製造方法 | |
JP7126909B2 (ja) | バックコンタクト型太陽電池セルの製造方法 | |
JP2011243726A (ja) | 太陽電池の製造方法 | |
JP2006140282A (ja) | 結晶シリコン太陽電池の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11850435 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2012549852 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2822592 Country of ref document: CA |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13997341 Country of ref document: US Ref document number: 12013501352 Country of ref document: PH |
|
REEP | Request for entry into the european phase |
Ref document number: 2011850435 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011850435 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20137019353 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2013134467 Country of ref document: RU Kind code of ref document: A |