WO2012067246A1 - 近接露光装置及び近接露光方法 - Google Patents

近接露光装置及び近接露光方法 Download PDF

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Publication number
WO2012067246A1
WO2012067246A1 PCT/JP2011/076719 JP2011076719W WO2012067246A1 WO 2012067246 A1 WO2012067246 A1 WO 2012067246A1 JP 2011076719 W JP2011076719 W JP 2011076719W WO 2012067246 A1 WO2012067246 A1 WO 2012067246A1
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WIPO (PCT)
Prior art keywords
light
light source
mask
substrate
proximity exposure
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Application number
PCT/JP2011/076719
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English (en)
French (fr)
Japanese (ja)
Inventor
工 富樫
洋徳 川島
Original Assignee
Ｎｓｋテクノロジー株式会社
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Filing date
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Application filed by Ｎｓｋテクノロジー株式会社 filed Critical Ｎｓｋテクノロジー株式会社
Priority to JP2012544332A priority Critical patent/JPWO2012067246A1/ja
Priority to CN201180055791.2A priority patent/CN103299243B/zh
Publication of WO2012067246A1 publication Critical patent/WO2012067246A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers

Definitions

  • the present invention relates to a proximity exposure apparatus and a proximity exposure method, and more particularly to a proximity exposure apparatus and a proximity exposure method suitable for exposure transfer of a TFT array substrate and a color filter substrate of a liquid crystal display device.
  • the collimation half angle is 1 to 2 °.
  • the collimation half-angle is determined by the relationship between the size of the integrator lens and the distance from the integrator lens to the collimation mirror. Is adjusted to 1.3 to 1.7 °.
  • the shape of the integrator lens is made circular by partially hiding the lens element in order to suppress a decrease in resolution even if the exposure gap varies.
  • a pulsed laser emitted from an excimer laser is incident on a beam shaping lens, converted into a parallel laser, and incident on a fly-eye lens having a diameter of 1/10. It is described that the laser beam is emitted as a uniform laser and the collimation half angle is set to 0.5 ° or less by a collimation mirror.
  • the illumination light intensity is uniformized by a uniformizing means comprising a rod lens between the light source and the fly-eye lens, and the photomask is illuminated by the fly-eye lens. It is described that the light intensity distribution is made uniform, and the ultraviolet illumination light emitted from the light source by the collimating means is converted into parallel light and applied to the photomask.
  • Illumination light emitted from a mercury lamp or an ultrahigh pressure mercury lamp used as a light source unit includes g-line (435 nm) light, h-line (404 nm) light, i-line (365 nm) light, and j-line (313 nm) light is included, and exposure was conventionally performed using g-line light, h-line light, and i-line light.
  • j-line light is used. It is known that the use of light in the wavelength range is effective (see, for example, Patent Document 5).
  • the proximity exposure apparatus described in Patent Document 7 includes a lamp unit having at least two types of lamps having different internal pressures, and selectively turns on each type of lamp.
  • Japanese Unexamined Patent Publication No. 2007-240714 Japanese Unexamined Patent Publication No. 2007-94310 Japanese Unexamined Patent Publication No. 2008-158282 Japanese Unexamined Patent Publication No. 2005-265985 Japanese Unexamined Patent Publication No. 2009-182191 Japanese Unexamined Patent Publication No. 2006-184709 Japanese Unexamined Patent Publication No. 2008-191252 Japanese Unexamined Patent Publication No. 2008-242365
  • Patent Document 3 also describes that the collimation half angle is determined by the size and shape of the integrator lens.
  • the same problem as in Patent Document 2 exists.
  • the pattern to be transferred onto the substrate has a high resolution
  • each pattern has a desired line width
  • the collimation half angle is required to be variable so as to give the desired line width for each pattern. It is done.
  • Patent Documents 1 to 5 are configured so as to have a fixed small collimation half angle aiming at high resolution, and are not configured to easily change the collimation half angle.
  • Patent Document 5 has a problem that the light source is limited to the excimer laser, and other light sources cannot be used.
  • the exposure apparatus described in Patent Document 6 relates to a projection exposure apparatus, and does not disclose that a plurality of types of lamps are switched and used.
  • the proximity exposure apparatus described in Patent Document 7 also has a problem that it is difficult to control at the time of switching because the lamps are switched by selectively emitting a plurality of types of lamps.
  • only a plurality of shutters are described, and it does not relate to proximity exposure.
  • the present invention has been made in view of the above-described problems, and an object thereof is a proximity exposure apparatus and a proximity exposure method capable of obtaining a high-resolution pattern having a desired line width by variably setting a collimation half angle. Is to provide. Another object is to obtain a high-resolution pattern by using a light source unit that irradiates light of a short wavelength, and by using a light source unit that irradiates light of another wavelength, It is another object of the present invention to provide a proximity exposure apparatus and a proximity exposure method capable of switching each light source unit at an appropriate timing.
  • the above object of the present invention can be achieved by the following constitution. (1) a substrate holder for holding the substrate; A mask holding unit for holding a mask so as to face the substrate; An illumination optical system that emits light for pattern exposure toward the mask; In the state where the substrate and the mask are brought close to a predetermined gap, the substrate is irradiated with light from the illumination optical system through the mask, and the pattern of the mask is transferred to the substrate A proximity exposure apparatus,
  • the proximity exposure apparatus wherein the illumination optical system includes a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred onto the substrate.
  • the illumination optical system further includes: a light source unit; and an integrator configured by a fly-eye lens including a plurality of lens cells to equalize the intensity of light from the light source unit.
  • the collimation half-angle adjustment mechanism is provided on an incident surface side or an emission surface side of the integrator, and blocks light incident on one of the plurality of lens cells or light emitted from any of the plurality of lens cells.
  • the proximity exposure apparatus according to (1) which is a light intensity reducing member that reduces light.
  • the proximity exposure apparatus according to (2) wherein the light intensity reducing member has a plurality of neutral density filters that can move independently.
  • the plurality of neutral density filters include a plurality of types of neutral density filters, and can be shielded with a plurality of neutral density ratios equal to or greater than the type of neutral density filters.
  • Proximity exposure device (5)
  • the illumination optical system further includes a light source unit and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
  • the proximity exposure apparatus according to (1), wherein the collimation half-angle adjustment mechanism is a lens that is provided between the light source unit and the integrator and changes a diameter or an incident angle of light incident on the integrator. .
  • the illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
  • the illumination optical system further includes a light uniformizing optical component that is provided between the light source unit and the integrator and uniformizes the intensity of light from the light source unit (2).
  • the proximity exposure apparatus wherein the pattern of the mask has a line width different from a desired line width of the pattern exposed on the substrate.
  • the illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
  • the proximity exposure according to (1), wherein the collimation half-angle adjustment mechanism is a light shielding member that is provided on an exit surface side of the integrator and shields light emitted from any of the plurality of lens cells. apparatus.
  • the proximity exposure apparatus according to (9), wherein light from the light source unit is directly incident on the integrator.
  • the illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit. And a plurality of light shielding members capable of shielding light from the first and second light source units, (1) The illumination optical system can irradiate the light of the first and second light source units at different timings by controlling the opening timing of the plurality of light shielding members. Proximity exposure device.
  • the plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second light shielding member capable of shielding light from the second light source unit, (9)
  • Each of the first and second light source units includes a plurality of first and second light source units
  • the first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units
  • the second light shielding member is provided for each of the plurality of second light source units, and includes a plurality of second light shielding members capable of shielding light from the plurality of second light source units, respectively.
  • the apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
  • the proximity exposure apparatus according to (13), wherein the plurality of first and second light shielding members are attached to the cassette.
  • the plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second capable of shielding all light from the first and second light source units.
  • Each of the first and second light source units includes a plurality of first and second light source units,
  • the first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units, respectively.
  • the proximity exposure apparatus according to (15).
  • the apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
  • the proximity exposure apparatus according to (16), wherein the plurality of first light shielding members are attached to the cassette.
  • the illumination optical system is a proximity exposure method of a proximity exposure apparatus having a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred to the substrate, Adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate by the collimation half angle adjustment mechanism; Irradiating the substrate with light from the illumination optical system through the mask in a state where the substrate and the mask are close to a predetermined gap, and exposing and transferring the pattern of the mask to the substrate;
  • a proximity exposure method comprising: (19)
  • the illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of
  • the exposure transfer step the light from the first and second light source units is made different by controlling the opening timing of the plurality of light shielding members in a state where the substrate and the mask are brought close to a predetermined gap.
  • the proximity exposure method according to (18) wherein the substrate is irradiated with light through the mask at a timing, and the pattern of the mask is transferred to the substrate.
  • the illumination optical system has a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate,
  • the collimation half-angle adjustment mechanism adjusts to a predetermined collimation half-angle corresponding to the desired line width of the pattern transferred to the substrate, and masks the light from the illumination optical system with the substrate and mask close to a predetermined gap. And irradiating the substrate through the mask, and transferring the mask pattern onto the substrate.
  • the collimation half angle can be set variably, and a high-resolution pattern having a desired line width can be obtained.
  • the illumination optical system includes a first light source unit that emits light having a peak wavelength at a short wavelength of 350 nm or less, the first light source unit,
  • the illumination optical system includes a second light source unit that emits light having different characteristics and a plurality of light shielding members capable of shielding light from the first and second light source units.
  • FIG. 4 It is a partial exploded perspective view for demonstrating the division
  • (A) is a front view which shows the modification of the mask holder of FIG. 20, (b) is the top view, (c) is the side view. It is a schematic diagram of the illumination optical system which concerns on the modification of 7th Embodiment of this invention.
  • (A) is the front view which shows the mask holder of FIG. 23, (b) is the top view, (c) is the side view. It is a graph which shows the light intensity distribution in the exposure surface at the time of exposing using the mask which has a general mask pattern, and an ideal light intensity distribution.
  • the divided sequential proximity exposure apparatus PE of one embodiment holds a mask stage 10 that holds a mask M and a glass substrate (hereinafter also simply referred to as “substrate W”) W.
  • a substrate stage 20 and an illumination optical system 70 (see FIG. 4) for irradiating light for pattern exposure are provided.
  • the substrate W is disposed so as to face the mask M, and a resist is coated on the surface (opposite surface side of the mask M) in order to expose and transfer the mask pattern drawn on the mask M.
  • the mask stage 10 is a mask stage base 11 in which a rectangular opening 11a is formed at the center, and a mask holding part that is mounted on the opening 11a of the mask stage base 11 so as to be movable in the X axis, Y axis, and ⁇ directions.
  • a mask holding frame 12 and a mask driving mechanism 16 that is provided on the upper surface of the mask stage base 11 and adjusts the position of the mask M by moving the mask holding frame 12 in the X axis, Y axis, and ⁇ directions. .
  • the mask stage base 11 is supported by a column 51 standing on the apparatus base 50 and a Z-axis moving device 52 provided at the upper end of the column 51 so as to be movable in the Z-axis direction (see FIG. 2). It is arranged above the stage 20.
  • a plurality of planar bearings 13 are arranged on the upper surface of the peripheral edge of the opening 11a of the mask stage base 11, and the mask holding frame 12 has a flange 12a provided at the outer peripheral edge of the upper end. It is mounted on the flat bearing 13. As a result, the mask holding frame 12 is inserted into the opening 11a of the mask stage base 11 through a predetermined gap, so that the mask holding frame 12 can move in the X axis, Y axis, and ⁇ directions by the gap.
  • a chuck portion 14 for holding the mask M is fixed to the lower surface of the mask holding frame 12 via a spacer 15.
  • the chuck portion 14 is provided with a plurality of suction nozzles 14a for sucking the peripheral portion of the mask M on which the mask pattern is not drawn, and the mask M is not shown in the drawing through the suction nozzle 14a. It is detachably held on the chuck portion 14 by the apparatus.
  • the chuck portion 14 can move in the X axis, Y axis, and ⁇ directions with respect to the mask stage base 11 together with the mask holding frame 12.
  • the mask driving mechanism 16 includes two Y-axis direction driving devices 16y attached to one side along the X-axis direction of the mask holding frame 12, and one X-axis attached to one side along the Y-axis direction of the mask holding frame 12.
  • Direction drive device 16x is attached to one side along the X-axis direction of the mask holding frame 12.
  • the Y-axis direction driving device 16y is installed on the mask stage base 11, and has a driving actuator (for example, an electric actuator) 16a having a rod 16b that expands and contracts in the Y-axis direction, and a pin support mechanism 16c at the tip of the rod 16b. And a guide rail 16e attached to a side portion of the mask holding frame 12 along the X-axis direction and movably attached to the slider 16d.
  • the X-axis direction drive device 16x has the same configuration as the Y-axis direction drive device 16y.
  • the mask holding frame 12 is moved in the X-axis direction by driving one X-axis direction drive device 16x, and the two Y-axis direction drive devices 16y are driven equally.
  • the mask holding frame 12 is moved in the Y axis direction.
  • the mask holding frame 12 is moved in the ⁇ direction (rotated about the Z axis) by driving one of the two Y-axis direction driving devices 16y.
  • a gap sensor 17 for measuring a gap between the opposing surfaces of the mask M and the substrate W, and a mounting position of the mask M held by the chuck portion 14.
  • an alignment camera 18 for confirming the above.
  • the gap sensor 17 and the alignment camera 18 are held so as to be movable in the X-axis and Y-axis directions via the moving mechanism 19 and are arranged in the mask holding frame 12.
  • aperture blades 38 are provided at both ends in the X-axis direction of the opening 11a of the mask stage base 11 to shield both ends of the mask M as necessary. It is done.
  • the aperture blade 38 is movable in the X-axis direction by an aperture blade drive mechanism 39 including a motor, a ball screw, a linear guide, and the like, and adjusts the shielding area at both ends of the mask M.
  • the aperture blades 38 are provided not only at both ends of the opening 11a in the X-axis direction but also at both ends of the opening 11a in the Y-axis direction.
  • the substrate stage 20 includes a substrate holding unit 21 that holds the substrate W, and a substrate that moves the substrate holding unit 21 in the X-axis, Y-axis, and Z-axis directions with respect to the apparatus base 50.
  • Drive mechanism 22 The substrate holding unit 21 detachably holds the substrate W by a vacuum suction mechanism (not shown).
  • the substrate drive mechanism 22 includes a Y-axis table 23, a Y-axis feed mechanism 24, an X-axis table 25, an X-axis feed mechanism 26, and a Z-tilt adjustment mechanism 27 below the substrate holder 21.
  • the Y-axis feed mechanism 24 includes a linear guide 28 and a feed drive mechanism 29, and a slider 30 attached to the back surface of the Y-axis table 23 extends 2 on the apparatus base 50.
  • the Y-axis table 23 is driven along the guide rail 31 by a motor 32 and a ball screw device 33 while straddling the guide rail 31 through a rolling element (not shown).
  • the X-axis feed mechanism 26 has the same configuration as the Y-axis feed mechanism 24, and drives the X-axis table 25 in the X direction with respect to the Y-axis table 23.
  • the Z-tilt adjustment mechanism 27 has one movable wedge mechanism, which is a combination of the wedge-shaped moving bodies 34 and 35 and the feed drive mechanism 36, arranged at one end in the X direction and two at the other end. Consists of.
  • the feed drive mechanisms 29 and 36 may be a combination of a motor and a ball screw device, or may be a linear motor having a stator and a mover. Further, the number of Z-tilt adjustment mechanisms 27 installed is arbitrary.
  • the substrate driving mechanism 22 feeds and drives the substrate holding unit 21 in the X direction and the Y direction, and moves the substrate holding unit 21 to Z so as to finely adjust the gap between the opposing surfaces of the mask M and the substrate W. Fine movement and tilt adjustment in the axial direction.
  • Bar mirrors 61 and 62 are respectively attached to the X-direction side and Y-direction side of the substrate holding unit 21, and a total of three laser interferometers are installed at the Y-direction end and the X-direction end of the apparatus base 50. 63, 64, 65 are provided. As a result, the laser beams are irradiated from the laser interferometers 63, 64, 65 to the bar mirrors 61, 62, the laser beams reflected by the bar mirrors 61, 62 are received, and the laser beams and the laser beams reflected by the bar mirrors 61, 62 are received. The position of the substrate stage 20 is detected by measuring interference with light.
  • the illumination optical system 70 includes a light source unit 73 including an ultra-high pressure mercury lamp 71 as a light emitting unit, and a reflecting mirror 72 that emits light generated from the lamp 71 with directivity. And an integrator 74 that is made up of a fly-eye lens composed of a plurality of lens cells and that uniformizes the intensity of light from the light source unit 73, and a plane mirror 75 that changes the direction of the optical path emitted from the exit surface of the integrator 74. A collimation mirror 76, and an exposure control shutter 77 that is disposed between the light source unit 73 and the integrator 74 and controls opening and closing so as to transmit and block the irradiated light.
  • the lamp 71 is not limited to a single lamp, and may be a combination of a plurality of lamps.
  • the light source unit 73 is not limited to the lamp 71 and may be laser light.
  • the illumination optical system 70 of the present embodiment is provided on the incident surface side of the integrator 74 as a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate W.
  • a light blocking member 78 that is a light intensity reducing member that blocks light incident on any of the plurality of lens cells so as to be set to a predetermined collimation half angle.
  • another integrator 79 as a light uniformizing optical component that uniformizes the intensity of light from the light source unit 73.
  • the collimation half angle is determined by the diameter of the integrator and the collimation mirror 76 (or collimation lens), but the light shielding member 78 is provided so that the emitted light from the integrator 74 does not diffuse and the emitted light becomes closer to parallel light. .
  • the light shielding member 78 is configured to be movable so as to shield a portion of the lens cell that contributes to light having a large angle within the collimation half angle and to give a predetermined collimation half angle.
  • the collimation half angle is preferably set between 0.1 and 2.0 °. When the collimation half angle is less than 0.1 °, the transfer pattern is distorted.
  • the collimation half angle is greater than 2.0 °
  • the amount of blur of the transfer pattern increases.
  • the light blocking member 78 if the light is blocked by the light blocking member 78, the illuminance uniformity deteriorates. In this case, the uniformity is improved by employing the integrator 74 having a large number of divisions.
  • the light shielding member 78 may be a metal such as iron, aluminum, tungsten, tantalum, tantalum is preferable in consideration of heat resistance, and light aluminum is preferable in consideration of mobility. Further, the light shielding member 78 may shield the outer portion of the lens cell so that the light from the light source unit 73 enters the integrator 74 in a circular shape, or the lens so that the light is incident in a square shape. The outer portion of the cell may be shielded from light.
  • the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other.
  • the gap between them is adjusted to a gap of about 100 to 300 ⁇ m, for example, and is arranged close to each other.
  • light for exposure from the light source unit 73 is incident on another integrator 79, and further collected by an integrator 74 that is partially shielded by moving a light shielding member 78, and is collected by a plane mirror 75 and a collimation mirror 76.
  • the light is reflected to be a plane light having a predetermined collimation angle and enters the mask M.
  • the exposure light transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is exposed and transferred to the substrate W.
  • a predetermined collimation half angle can be given by partially blocking the light incident on the integrator 74 by the movement of the light blocking member 78, so that a desired pattern to be transferred to the substrate W to be exposed can be obtained.
  • the collimation half angle can be variably set according to the line width, and a high-resolution pattern having a desired line width can be obtained.
  • the integrators 74 and 79 can make the light intensity uniform by subdividing. Therefore, the integrators 74 and 79 can select different division numbers in consideration of the illuminance distribution.
  • the light intensity reducing member may be a neutral density filter that attenuates light incident on any of the plurality of lens cells instead of the light shielding member 78.
  • the light blocking member 78 and the neutral density filter are provided on the incident surface side of the integrator 74, but are provided on the output surface side of the integrator 74 so that the collimation half angle of the light for pattern exposure is 0.1 to 2.0.
  • the light emitted from any one of the plurality of lens cells may be blocked or dimmed so that the light intensity is highest in the vicinity of the incident angle of 0 °.
  • the light homogenizing optical component it is preferable to use another integrator 79 because it is possible to obtain parallel light even when a plurality of light source units are provided.
  • a kaleidoscope composed of a rod integrator or mirror that is an internal reflection type optical element, a diffusion plate, or the like may also be used.
  • the positional relationship between the integrator 74 and the other integrator 79 is arbitrary.
  • the other integrator 79 may be arranged on the downstream side of the integrator 74, or at least one of the integrator 74 and the other integrator 79 is Further, it may be arranged upstream of the exposure control shutter 77.
  • the proximity exposure apparatus has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
  • the proximity exposure apparatus and the proximity exposure according to the first embodiment are used in that a plurality of neutral density filters 78a and 78b are used as the light intensity reducing member that is a collimation half angle adjustment mechanism. Different from the method.
  • the illumination optical system 70a includes a movable first neutral density filter 78a having a first attenuation ratio and a movable second density having a second attenuation ratio as a light intensity reducing member. And a neutral density filter 78b.
  • the lens cell portion of the integrator 74 that contributes to light with a large angle within the collimation half angle is dimmed by moving at least one of the first neutral density filter 78a and the second neutral density filter 78b.
  • the light intensity can be variably set so that the vicinity of the incident angle of 0 ° is the highest, and a high-resolution pattern having a desired line width can be obtained.
  • the light is attenuated alone or jointly to reduce
  • the light incident on the lens cell can be dimmed with two dimming rates.
  • the sum of the first attenuation rate of the first attenuation filter 78a and the second attenuation rate of the second attenuation filter 78b is 100% or more, the two attenuation filters 78a and 78b You may make it light-shield the part of a lens cell using both.
  • the light intensity reducing member only needs to have a plurality of neutral density filters that can move independently of each other, and is not limited to two as in the present embodiment, and may be three or more. Good. Therefore, a plurality of neutral density filters are constituted by a plurality of types of neutral density filters and selectively used, so that light can be shielded with a plurality of neutral density ratios that are equal to or greater than the types of neutral density filters.
  • first and second light shielding members 78a and 78b are provided on the exit surface side of the integrator 74, and light uniformizing optics.
  • the structure which does not provide components may be sufficient.
  • the integrator 74 is provided between the light source unit 73 and the integrator 74.
  • a lens 80 that is movable in the vertical direction with respect to the incident surface is provided.
  • the lens 80 of the present embodiment can be applied in combination with the light intensity reducing member of the first embodiment or the light intensity reducing member of the second embodiment, or the light intensity reducing member of the first embodiment. It is also possible to apply in combination with both the light intensity reducing member of the second embodiment.
  • the lens 80 is moved to change the incident light diameter or the incident angle to the integrator 74 to weaken the intensity of light outside the collimation half angle of the light for pattern exposure.
  • a high-resolution pattern with a desired line width can be obtained by setting the light intensity to be highest in the vicinity of an incident angle of 0 ° between ⁇ 2.0 °.
  • the lens 80 is disposed between the light source unit 73 and another integrator 79 that is a light uniformizing optical component, but a modification of the present embodiment shown in FIG. 10.
  • the lens 80 may be arranged between the light source unit 73 and the integrator 74 without providing the light uniformizing optical component as in the proximity exposure apparatus according to the above.
  • the light source unit 73 can be moved in the vertical direction with respect to the incident surface of the integrator 74 as a collimation half-angle adjustment mechanism instead of providing the above-described light intensity reducing member and lens. Provided.
  • the light source unit 73 is moved to change the incident light diameter to the integrator 74, thereby reducing the intensity of light outside the collimation half angle of the light for pattern exposure.
  • a high-resolution pattern with a desired line width can be obtained by making the light intensity the highest in the vicinity of an incident angle of 0 ° between 0.0 °.
  • the proximity exposure apparatus may have a configuration in which the light uniformizing optical component is not provided.
  • the illumination optical system 70d of the present embodiment includes a plurality of bandpass filters 90a and 90b that respectively transmit different wavelengths ⁇ [nm].
  • the filter switching mechanism 91 provided is further provided.
  • the mask M used in the present embodiment is made of a translucent substrate, and as shown in FIG. 14, a main pattern portion (light transmission portion) 81 having a line-shaped main opening, and a main pattern portion 81.
  • the phase shift mask includes a side-transparent line-shaped auxiliary pattern portion (light transmission portion) 83, and the main pattern portion 81 and the auxiliary pattern portion 83 are partitioned by a phase shift film 84.
  • the outer portion of the auxiliary pattern portion 83 is a light shielding film (chrome film) 82 that shields light.
  • the auxiliary pattern portion 83 is an opening that is not resolved after the development processing, and is arranged symmetrically on both sides with respect to the center O of the main pattern portion 81.
  • a plurality of auxiliary pattern portions 83 may be arranged symmetrically on both sides with respect to the center O of the main pattern portion 81.
  • the phase shift film 84 can improve the resolution that has deteriorated due to light interference by shifting the phase of the light passing therethrough by 180 °.
  • the phase difference of 180 ° is given by giving it by -1).
  • the phase shift film 84 can also change the degree of interference according to the phase shift amount. Further, the degree of interference can be changed even if the amount of transmission through the phase shift film 84 is changed.
  • the line width A of the main pattern portion 81 is 15 ⁇ m or less, and is set wider than the line width of the pattern that is exposed and transferred onto the surface of the substrate W.
  • the width B of the phase shift film 84 is set to 2/3 or less of the line width A of the main pattern portion 81
  • the line width C of the auxiliary pattern portion 83 is set to 2/3 or less of the width B of the phase shift film. Is set.
  • the line widths A and C of the main pattern portion 81 and the auxiliary pattern portion 83 of the mask pattern P and the width B of the phase shift film 84 are obtained by calculating the intensity of light irradiated to the substrate W and obtained by each mask pattern.
  • the intensity distribution in the line width direction to be obtained is calculated by simulation, and is determined by whether the line width of the pattern on the substrate obtained after the development processing or the contrast necessary for fine line resolution is obtained.
  • the mask M having the phase shift film 84 has a predetermined wavelength ⁇ of light to be transmitted in relation to the film thickness d in order to improve the resolution due to the phase shift.
  • the band-pass filters 90a and 90b that transmit the wavelength ⁇ according to the photosensitive characteristics of the substrate W are selected from the plurality of band-pass filters 90a and 90b that can be switched. Then, light having a wavelength transmitted through the bandpass filters 90a and 90b is irradiated through the mask M, and a line-shaped pattern 85 is formed on the surface of the substrate W facing the main pattern portion 81 by the mask pattern of the mask M. .
  • the mask M on which the mask pattern P is not formed is attracted and held by the chuck portion 14, the mask M is bent by its own weight, and the opposing surface of the mask M and the substrate W The gap g between them tends to be small near the center of the mask M, and tends to be large at the periphery, and the intensity distribution obtained by changing the gap g at each position of the mask M is different.
  • the exposure amount (energy amount) necessary for the resist to form a pattern after the development processing is such that the line width of the pattern formed on the substrate at each position in the exposure region where the gap g is different is substantially constant.
  • the amount of energy is preferably a line width of a pattern formed on the substrate W in consideration of the sensitivity of the resist applied to the substrate W and the gap g between the opposing surfaces of the substrate W and the mask M. It is determined to be the width of.
  • the mask pattern P of the mask M is not limited to the shape described above, and the main pattern portion includes two main openings parallel to each other via the phase shift film or the light shielding film, and the auxiliary pattern portion is You may arrange
  • the main pattern portion 81 includes two main openings 81 a and 81 a that are parallel to each other via the phase shift film 84, and the auxiliary pattern portion 83 is 2 through the phase shift film 84.
  • the main openings 81a and 81a are arranged outside the book.
  • the auxiliary pattern portion 83 is arranged symmetrically with respect to the center O between the two main openings 81a and 81a.
  • the mask of the present embodiment is configured to have a phase shift film, but is not limited to this.
  • the mask pattern P has a main pattern portion 81 and an auxiliary pattern portion 83 separated by a light shielding film 82 without using a phase shift film, as shown in FIG. It may be a configuration.
  • the mask of a pattern having a line width different from the desired line width of the pattern transferred to the substrate W as in the present embodiment is used in combination with the illumination optical system 70d provided with the collimation half-angle adjustment mechanism.
  • a resolution pattern can be formed.
  • the mask of the present embodiment can also be applied to the collimation half-angle adjustment mechanism of the second to fourth embodiments.
  • the proximity exposure apparatus has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
  • the illumination optical system 70e includes ultrahigh pressure mercury lamps 71a and 71b as light emitting units and reflections emitted with directivity to the light generated from these lamps 71a and 71b.
  • An integrator configured by mirrors 72a and 72b, first and second light source units 73a and 73b including the mirrors 72a and 72b, and a fly-eye lens including a plurality of lens cells, and uniformizing the intensity of light from the light source units 73a and 73b 74, a plane mirror 75 that changes the direction of the light path emitted from the exit surface of the integrator 74, a collimation mirror 76, and the first and second light source units 73a and 73b, respectively, are arranged in front of each other, Mechanical first and second light shielding members (a plurality of light shielding members) 177 and 178 that are controlled to open and close so as to pass and block.
  • the first light source unit 73a emits light having a peak wavelength at 350 nm or less, specifically, a short wavelength of j-line (313 nm), and the second light source unit 73b is 350 nm or more, for example, i-line ( Irradiating light having a peak wavelength at a wavelength of 365 nm).
  • the first light shielding member 177 capable of shielding light from the first light source unit 73a and the second light shielding member 178 capable of shielding light from the second light source unit 73b include the light source units 73a and 73b.
  • each light shielding member 177 and 178 is also arbitrary, and may be a rotary type or a slide type.
  • the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other.
  • the gaps are adjusted to a predetermined gap, for example, about 100 to 150 ⁇ m, and are arranged close to each other.
  • the first light shielding member 177 is closed and the second light shielding member 178 is opened, and the light from the second light source unit 73 b is incident on the integrator 74, and the plane mirror 75 and the collimation mirror 76. And is incident on the mask M.
  • the first light blocking member 177 is also controlled to be opened, so that light having a short wavelength is incident on the integrator 74 from the first light source unit 73a and reflected by the plane mirror 75 and the collimation mirror 76. Is incident on the mask M. Then, each light of the first light source unit 73a and the second light source unit 73b that has passed through the mask M exposes the positive resist applied on the surface of the substrate W so that the mask pattern of the mask M is exposed to the substrate W. Transcribed. At this time, the thinned pattern can be transferred by the short-wavelength light from the first light source unit 73a, and the resist in the contact portion with the substrate W is also exposed by the light from the second light source unit 73b. can do.
  • the illumination optical system 70e includes the first light source unit 73a that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and the first light source unit 73a.
  • a second light source unit 73b that emits light having spectral characteristics different from those of the first light source unit 73a, and first and second light shielding members 177 that can block light from the first and second light source units 73a and 73b. 178.
  • the opening timings of the first and second light shielding members 177 and 178 are controlled to control the first and second light source units 73a and 73b. Is irradiated onto the substrate W through the mask M at different timings, and the pattern of the mask M is transferred to the substrate W. Therefore, a high-resolution pattern can be obtained, the throughput can be improved, and the light sources 73a and 73b can be switched at an appropriate timing.
  • FIG. 19 is a schematic diagram of an illumination optical system according to a modification of the present embodiment.
  • the plurality of light shielding members includes a first light shielding member 177 capable of shielding light from the first light source unit 73a and all light from the first and second light source units 73a and 73b.
  • a second light shielding member 179 capable of shielding the light. As shown in FIG. 19, the second light shielding member 179 may be provided on the incident surface side of the integrator 74, or may be provided on the output surface side of the integrator 74.
  • the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 178 of the above embodiment.
  • the second light shielding member 179 can use an existing light shielding member provided in the proximity exposure apparatus having one light source unit as it is, and can reduce the apparatus cost.
  • the illumination optical system 70g differs from the proximity exposure apparatus and proximity exposure method of the sixth embodiment in the configuration of the first and second light source units and the plurality of light shielding members.
  • the first and second light source units 73c and 73d include a plurality of first and second light source units 73c and 73d, respectively.
  • the cassette 181 and the frame 182 the light from all the light source parts 73 c and 73 d is arranged to be incident on the incident surface of the integrator 74.
  • each of the cassettes 181 includes ten first light source parts 73d arranged in the width direction and divided in the vertical direction, and ten second light source parts 73d arranged in the width direction. It is attached to the center in two steps.
  • the frame 182 is provided with a plurality of cassettes 181 in the vertical direction and a plurality of cassettes 181 in the horizontal direction.
  • Each of the first and second light source units 73c and 73d also includes ultrahigh pressure mercury lamps 71c and 71d as light emitting units, and reflecting mirrors 72c and 72d that emit light with directivity emitted from the lamps 71c and 71d.
  • the first light source unit 73c irradiates light having a peak wavelength at 350 nm or less, specifically at a short wavelength of j-line (313 nm), and the second light source unit 73d is 350 nm or more.
  • light having a peak wavelength at the wavelength of i-line (365 nm) is irradiated. That is, the illumination optical system 70g of the present embodiment uses a plurality of first and second light source units 73c and 73d that are reduced in size as compared with those of the sixth embodiment that emit light with power of 10 kw or less. Configured.
  • the cassette 181 is provided with a plurality of light shielding members 183 and 184 on the front surface of the respective opening portions 181a of the light source portions 73c and 73d. That is, the plurality of first light shielding members 183 are provided for each of the plurality of first light source parts 73c, and are opened and closed around the rotation shafts 183a provided around the respective openings 181a. The light from the light source unit 73c is passed / shielded.
  • a plurality of second light shielding members 184 are provided for each of the plurality of second light source parts 73d, and are opened and closed around a rotation shaft 184a provided around each opening part 181a. The light from the light source unit 73d is passed / shielded.
  • the first and second light shielding members 183 and 184 may be attached to the cassette 181 as in the present embodiment, or may be attached to the frame 182.
  • the plurality of first light shielding members 183 are closed and the plurality of second light shielding members 184 are opened, so that the plurality of second light source units 73d are controlled. Is incident on the integrator 74, reflected by the plane mirror 75 and the collimation mirror 76, and incident on the mask M.
  • the plurality of first light shielding members 183 are also controlled to open, so that light having a short wavelength is incident on the integrator 74 from the plurality of first light source units 73c, and the plane mirror 75 and collimation are performed. The light is reflected by the mirror 76 and enters the mask M.
  • each light of the plurality of first light source units 73c and the plurality of second light source units 73d transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is formed. It is exposed and transferred to the substrate W. Therefore, also in the present embodiment, the thinned pattern can be transferred by the short wavelength light from the plurality of first light source portions 73c, and the substrate can be transferred by the light from the plurality of second light source portions 73d. The resist in contact with W can also be exposed.
  • the small light source units 73c and 73d as in the present embodiment, since the area of the glass of the lamp is small, the light absorption on the short wavelength side is small, so that it is possible to secure the light emission amount necessary for exposure. it can.
  • the arrangement of the two types of light source units 73c and 73d is determined in advance in the cassette 181, and a plurality of light source units 73c and 73d are arranged adjacent to each other, as in the modification shown in FIG.
  • the first and second light shielding members 183 and 184 that can collectively shield the light sources 73c and 73d may be configured.
  • the plurality of light shielding members 179, 183 are capable of shielding light from the plurality of first light source units 73c, and the first and second light source units 73c. , 73d, and a second light shielding member 179 that can shield all light.
  • the second light shielding member 179 may be provided on the incident surface side of the integrator 74 as illustrated in FIG. 23, or may be provided on the emission surface side of the integrator 74. For this reason, a plurality of first light shielding members 183 are attached to the cassette 181 only on the front surface of the plurality of first light source parts 73c.
  • the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 184 of the above embodiment. Can do.
  • the second light shielding member 179 can use an existing light shielding member provided in a proximity exposure apparatus having one type of light source unit as it is, and can reduce the apparatus cost.
  • the illumination optical systems 70e to 70h of the sixth or seventh embodiment can be applied in combination with the illumination optical systems 70 to 70d having the collimation half angle adjustment mechanism of the first to fifth embodiments.
  • the proximity exposure apparatus and proximity exposure method of the present invention may be applied to the production of a TFT array substrate, and can also be applied to the production of a color filter substrate.
  • the light transmittance at the opening of the mask pattern may be set to 90% or less.
  • the proximity scanning exposure apparatus exposes light for exposure via a plurality of masks M on which a mask pattern is formed on a substantially rectangular substrate W that is floated and supported in the vicinity of the mask M and is transported in a predetermined direction. , And a mask pattern is exposed and transferred onto the substrate W, and a scanning exposure method is adopted in which exposure transfer is performed while the substrate W is moved relative to the plurality of masks M.
  • the light source unit of the present invention is not limited to the two types of light source units, the first and second light source units, and has another type of light source unit that has spectral characteristics different from those of the first and second light source units. It may be a configuration.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
PCT/JP2011/076719 2010-11-19 2011-11-18 近接露光装置及び近接露光方法 WO2012067246A1 (ja)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020179740A1 (ja) * 2019-03-04 2020-09-10 株式会社ブイ・テクノロジー 露光用の光源装置、露光装置、及び露光方法
JPWO2019146448A1 (ja) * 2018-01-24 2021-01-07 株式会社ニコン 露光装置及び露光方法
WO2021070643A1 (ja) * 2019-10-11 2021-04-15 株式会社ブイ・テクノロジー 近接露光装置用照明装置、ｌｅｄユニット、近接露光装置及び近接露光装置の露光方法
TWI753032B (zh) * 2016-11-07 2022-01-21 日商Ｈｏｙａ股份有限公司 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107065445B (zh) * 2017-01-22 2018-11-27 武汉华星光电技术有限公司 一种曝光装置
JP6951926B2 (ja) * 2017-06-06 2021-10-20 株式会社オーク製作所 露光装置
KR102049806B1 (ko) * 2018-04-25 2020-01-22 한국과학기술연구원 특정 파장의 광원 및 반응성 가스를 이용하여 대상물의 표면을 평탄화하는 방법 및 장치

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04136853A (ja) * 1990-09-28 1992-05-11 Hitachi Ltd プロキシミティ露光用マスク及びその製造方法
JPH0695356A (ja) * 1992-09-17 1994-04-08 Sharp Corp マスク用データ作成方法
JPH07176475A (ja) * 1993-10-27 1995-07-14 Canon Inc 投影露光装置及び該投影露光装置を用いたデバイスの製造方法
JPH09190974A (ja) * 1996-12-20 1997-07-22 Canon Inc 露光装置及びそれを用いた素子製造方法
JP2002141261A (ja) * 2000-10-30 2002-05-17 Nikon Corp 面位置検出装置及びその製造方法、露光装置及びその製造方法、並びにマイクロデバイスの製造方法
JP2002217083A (ja) * 2001-01-12 2002-08-02 Canon Inc 照明装置及び露光装置
JP2003218000A (ja) * 2002-01-18 2003-07-31 Pentax Corp 露光装置
JP2004335949A (ja) * 2002-11-29 2004-11-25 Nikon Corp 露光装置及び露光方法
JP2005037637A (ja) * 2003-07-14 2005-02-10 Toppan Printing Co Ltd 露光装置
JP2008164729A (ja) * 2006-12-27 2008-07-17 Ushio Inc 光照射器及び光照射装置並びに露光方法
JP2008171974A (ja) * 2007-01-11 2008-07-24 Canon Inc 光量調整装置、露光装置およびデバイス製造方法
JP2008191252A (ja) * 2007-02-01 2008-08-21 Phoenix Denki Kk 露光用光源ならびにこれを用いた露光装置
JP2009163205A (ja) * 2007-12-31 2009-07-23 Lg Display Co Ltd 感光性膜露光装置及び方法
JP2009244913A (ja) * 2009-07-29 2009-10-22 Dainippon Printing Co Ltd プロキシミティ露光装置及びこのプロキシミティ露光装置を用いた露光方法
JP2009253209A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
JP2010251363A (ja) * 2009-04-10 2010-11-04 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251310A (ja) * 1992-03-06 1993-09-28 Nikon Corp 露光制御装置
JP2946950B2 (ja) * 1992-06-25 1999-09-13 キヤノン株式会社 照明装置及びそれを用いた露光装置
JP2891219B2 (ja) * 1996-12-20 1999-05-17 キヤノン株式会社 露光装置及びそれを用いた素子製造方法
JP4310816B2 (ja) * 1997-03-14 2009-08-12 株式会社ニコン 照明装置、投影露光装置、デバイスの製造方法、及び投影露光装置の調整方法
JP3005203B2 (ja) * 1997-03-24 2000-01-31 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
JP2005032847A (ja) * 2003-07-09 2005-02-03 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法およびデバイス
KR101138681B1 (ko) * 2009-04-09 2012-04-24 닛본 세이고 가부시끼가이샤 노광 장치용 광조사 장치, 노광 장치 및 노광 방법

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04136853A (ja) * 1990-09-28 1992-05-11 Hitachi Ltd プロキシミティ露光用マスク及びその製造方法
JPH0695356A (ja) * 1992-09-17 1994-04-08 Sharp Corp マスク用データ作成方法
JPH07176475A (ja) * 1993-10-27 1995-07-14 Canon Inc 投影露光装置及び該投影露光装置を用いたデバイスの製造方法
JPH09190974A (ja) * 1996-12-20 1997-07-22 Canon Inc 露光装置及びそれを用いた素子製造方法
JP2002141261A (ja) * 2000-10-30 2002-05-17 Nikon Corp 面位置検出装置及びその製造方法、露光装置及びその製造方法、並びにマイクロデバイスの製造方法
JP2002217083A (ja) * 2001-01-12 2002-08-02 Canon Inc 照明装置及び露光装置
JP2003218000A (ja) * 2002-01-18 2003-07-31 Pentax Corp 露光装置
JP2004335949A (ja) * 2002-11-29 2004-11-25 Nikon Corp 露光装置及び露光方法
JP2005037637A (ja) * 2003-07-14 2005-02-10 Toppan Printing Co Ltd 露光装置
JP2008164729A (ja) * 2006-12-27 2008-07-17 Ushio Inc 光照射器及び光照射装置並びに露光方法
JP2008171974A (ja) * 2007-01-11 2008-07-24 Canon Inc 光量調整装置、露光装置およびデバイス製造方法
JP2008191252A (ja) * 2007-02-01 2008-08-21 Phoenix Denki Kk 露光用光源ならびにこれを用いた露光装置
JP2009163205A (ja) * 2007-12-31 2009-07-23 Lg Display Co Ltd 感光性膜露光装置及び方法
JP2009253209A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
JP2010251363A (ja) * 2009-04-10 2010-11-04 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2009244913A (ja) * 2009-07-29 2009-10-22 Dainippon Printing Co Ltd プロキシミティ露光装置及びこのプロキシミティ露光装置を用いた露光方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753032B (zh) * 2016-11-07 2022-01-21 日商Ｈｏｙａ股份有限公司 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法
JPWO2019146448A1 (ja) * 2018-01-24 2021-01-07 株式会社ニコン 露光装置及び露光方法
WO2020179740A1 (ja) * 2019-03-04 2020-09-10 株式会社ブイ・テクノロジー 露光用の光源装置、露光装置、及び露光方法
WO2021070643A1 (ja) * 2019-10-11 2021-04-15 株式会社ブイ・テクノロジー 近接露光装置用照明装置、ｌｅｄユニット、近接露光装置及び近接露光装置の露光方法
JP7548589B2 (ja) 2019-10-11 2024-09-10 株式会社ブイ・テクノロジー 近接露光装置用照明装置、近接露光装置及び近接露光装置の露光方法

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