WO2012061464A1 - Vitrocéramiques à structure spinelle exemptes d'arsenic à transmission de lumière visible élevée - Google Patents
Vitrocéramiques à structure spinelle exemptes d'arsenic à transmission de lumière visible élevée Download PDFInfo
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- 229910052596 spinel Inorganic materials 0.000 title claims abstract description 23
- 239000011029 spinel Substances 0.000 title claims abstract description 23
- 239000002241 glass-ceramic Substances 0.000 title claims description 47
- 230000005540 biological transmission Effects 0.000 title description 27
- 239000006112 glass ceramic composition Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000005354 aluminosilicate glass Substances 0.000 claims abstract description 6
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002243 precursor Substances 0.000 claims abstract description 6
- 239000006104 solid solution Substances 0.000 claims abstract description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 230000005693 optoelectronics Effects 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 37
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 23
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 6
- 239000006060 molten glass Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 238000003279 ceramming Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000007670 refining Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000006124 Pilkington process Methods 0.000 claims description 3
- 229910017356 Fe2C Inorganic materials 0.000 claims description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 6
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 16
- 239000006064 precursor glass Substances 0.000 description 14
- 239000002667 nucleating agent Substances 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000006025 fining agent Substances 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004031 devitrification Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007571 dilatometry Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001676 gahnite Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001753 sapphirine Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/10—Compositions for glass with special properties for infrared transmitting glass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
Definitions
- the present disclosure relates to transparent glass-ceramic materials which contain a spinel solid solution as the main crystalline phase, corresponding precursor alumino-silicate glasses, articles made of said transparent glass-ceramic materials as well as a method for manufacturing such articles, and structures comprising a sheet made of such glass-ceramic materials and electronic or optoelectronic devices comprising such structures.
- the transparent spinel glass-ceramics display a high transmission in the 400-1000 nm range and are environmentally friendly (free of arsenic and antimony). They are industrially obtained in an easy way insofar as their precursor alumino-silicate glasses show suitable liquidus (low temperature of liquidus and high viscosity at this temperature).
- Some transparent spinel glass-ceramics also display interesting strain points and coefficient of thermal expansion. They are suitable substrates for high temperature growth of high quality monocrystalline or poly crystalline silicon thin films for example. Structures including such substrates with such thin films thereon can be used in photovoltaic devices, flat panel devices and liquid crystal devices.
- US Patent No. 4,687,750 relates to transparent glass-ceramics containing gahnite.
- the composition of the precursor glasses contains Ti0 2 as nucleating agent. Minor amounts of Zr0 2 may be included in the composition without adversely affecting the properties of the crystallized products. Nonetheless it is explained that Zr0 2 is unnecessary as a nucleating agent as Ti0 2 is a much more efficient nucleating agent. Moreover Zr0 2 is much less soluble than Ti0 2 in the glass, hence its presence hazards unmelted particles and/or devitrification in the glass and requires higher melting temperature.
- a fining agent such as AS2O3 and/or Sb 2 03 may be added to the batch.
- US Patent No. 5,476,821 describes high modulus glass-ceramics containing fine grained spinel-type crystals. Nucleation efficiency is enhanced by the presence of components such as Ti0 2 , Zr0 2 and NiO, and also high levels of A1 2 0 3 .
- US Patent No. 5,968,857 describes transparent glass-ceramics containing spinel as a predominant crystal phase.
- the composition of the precursor glasses contains Ti0 2 and/or Zr0 2 as nucleating agents. Fining agents such as As 2 C"3 or Sb 2 C"3 may be added to said precursor glass compositions.
- L.R. Pinckney the inventor of said US Patent No. 5,968,857, has also disclosed such transparent spinel glass-ceramics which display high strain point in the Journal of Non-Crystalline Solids, 255 (1999), pp. 171-177.
- the described glass-ceramics are able to withstand thermal treatments at 1000°C without deformation.
- L.R. Pinckney has observed that precursor glasses melted with Ti0 2 (but without arsenic) leads to glass-ceramics showing a gray color and so having a low transmission in all the visible range.
- US Patent Application No. 2005/0096208 describes glass-ceramics containing spinel, sapphirine or cordierite as a main crystalline phase. Said glass- ceramics can be obtained in forming precursor glasses by the float method and then by ceramming the formed glasses.
- B 2 O 3 is an essential component of the composition of the precursor glasses.
- P 2 O 5 , Ti0 2 , Zr0 2 , Sn0 2 and Ta 2 0 5 are proposed as nucleating agents.
- Sn0 2 is also proposed as fining agent.
- WO Patent Application 2007/144875 also describes glass-ceramics containing spinel as a main crystalline phase.
- Ti0 2 is disclosed as a preferred nucleating agent. It may be used in a large amount.
- the Figure shows complete transmission curves (as a function of wavelength) of comparative examples A and B and inventive examples 1 and 3.
- the inventors have considered the technical problem of providing spinel glass-ceramics (i) free of any toxic fining agent (free of AS 2 O 3 and Sb 2 0 3 ), (ii) showing a high transmission in the visible and near IR (such a high transmission is very important in the case of photovoltaic or equivalent applications: the glass-ceramic used as superstrate so allows a maximum of solar energy to reach the silicon layer), i.e.
- the transparent spinel glass-ceramics disclosed herein also display a high strain point (higher than 850°C, more preferably higher than 875°C and most preferably higher than 900°C), as well as a CTE in the 30-40x10 " 7 K _1 range (25-300°C).
- a high strain point higher than 850°C, more preferably higher than 875°C and most preferably higher than 900°C
- CTE in the 30-40x10 " 7 K _1 range 25-300°C.
- Said advantageous characteristics are particularly advantageous if the glass-ceramics are aimed to be used as substrates for layer(s) made of a semi-conductor, especially for crystalline silicon layer(s). Therefore, their CTE provides a relatively close thermal match to silicon, and their high strain point allows to be used them as a substrate to make high quality crystalline silicon by growth at high temperature (> 850°C).
- glass-ceramics disclosed herein have more particularly been developed in reference to the five above stipulations (so as to be particularly suitable as substrate for layer(s) made of a semi-conductor, especially for crystalline silicon layer(s)) but that the disclosure also encompasses glass-ceramics complying with only the first three stipulations and usable in others contexts. Such transparent spinel glass-ceramics are easily obtained, free of toxic fining agent and are per se interesting.
- Tin oxide is known as a possible substitute to arsenic for fining in alumino-silicate glasses.
- tin oxide in the composition of glass-ceramics, said glass-ceramics obtained from a precursor glass with a suitable liquidus and said glass-ceramics having a high transmission.
- the removal of arsenic leads to a strong absorption in the visible range and the removal of titanium oxide and its replacement by zirconium oxide leads to transparent material but with an inacceptable liquidus (> 1500°C).
- titanium containing glass-ceramics tend to have a strong absorption in the 400-450 nm range, probably due to the existence of a charge transfer between titanium and iron brought as an impurity by the raw materials. This absorption is enhanced when tin oxide is added.
- a transparent glass-ceramic material free of As and Sb and containing a spinel solid solution as the main crystalline phase.
- the composition of said material (expressed in percentages in weight) is free of As 2 0 3 and Sb 2 0 3 , with the exception of unavoidable trace thereof, and comprises Sn0 2 , Ti0 2 and Zr0 2 , and less than 100 ppm of Fe 2 0 3 .
- a transparent material here means a material showing a transmission of at least 50% for any wavelength in the 400-450 nm range (preferably higher than 70% for any wavelength in the 400-450 nm range), higher than 80% for any wavelength in the 450-520 nm range and higher than 85% for any wavelength in the 520-1000 nm range, such a transmission being measured through a thickness of 1 mm of material.
- the main crystalline phase observed in the material is a spinel solid solution of formula (Zn,Mg)Al 2 0 4 (being it not impossible that other elements like titanium or iron enter in the solid solution). It represents at least 75% (in weight %) of the crystalline matter.
- Other crystalline phases present within the material of the invention could be for example srilankite or quartz.
- the mean size of the spinel crystalites is typically lower than 10 nm.
- the composition of the material includes Sn0 2 as fining agent, both Ti0 2 and Zr0 2 as nucleating agents, and less than 100 ppm of Fe 2 0 3 , to generate a spinel glass-ceramic with a high transmission.
- Sn0 2 is efficient as fining agent. It seems also to play a role as nucleating agent and help to limit the level of titanium oxide. It is advantageously present at the indicated level of 0.1 - 2 wt. %, and it is very advantageously present at the indicated level of 15 - 0.8 wt. %. The fining efficiency and the absorption both increase with the tin oxide level.
- Ti0 2 is advantageously present (very advantageously present) within the indicated ranges. It has to be efficient enough as nucleating agent (otherwise the material is not transparent) and not responsible of a strong absorption.
- Zr0 2 is advantageously present within the indicated range. It has to be efficient enough as nucleating agent and not responsible of devitrification.
- the disclosed glasses display liquidus temperature lower than 1500°C and a viscosity at the liquidus higher than 700 dPa.s
- Iron is an impurity which may be introduced by the raw materials. Iron can be present at a concentration of less than 100 ppm to limit absorption. Its level is advantageously less than 80 ppm, very advantageously it is less than 60 ppm.
- the glass-ceramic materials have a composition, expressed in percentage by weight of oxide, which essentially consists of:
- the composition "essentially consists of the given list of compounds (oxides). This means that in the glass-ceramic materials according, the sum of the listed compounds (oxides) represents at least 95 weight %, generally at least 98 weight %. It cannot be excluded that other compounds may be found in low quantities in said glass-ceramic materials (obviously any other compounds that have not a strong detrimental action on the required properties, more particularly on transparency). So the presence of Ce0 2 is (quasi) excluded (the composition of the glass-ceramics generally includes no Ce0 2 ), also the significant presence of B 2 0 3 (the composition of the glass-ceramics generally includes no B 2 0 3 ).
- the composition advantageously comprise more than 55 % by weight of Si0 2 and within said composition, the molar ratio (R 2 0 + R0)/A1 2 03 is between 0.5 to 1.5, R 2 0 being the sum of the moles of alkali oxides and RO the sum of the moles of alkaline earth oxides plus ZnO.
- Glass-ceramics with such composition have a high strain point, of generally at least 875°C (at least 900°C).
- A1 2 0 3 is one of the main component of the crystals. It can be present at a minimum amount to ensure sufficient crystallization and not at a too high amount to then produce an unacceptable devitrification of mullite, hence the above indicated preferred range.
- ZnO and MgO are also constituents of the crystals. Therefore a minimum amount can be incorporated. At a too high level, MgO is detrimental for transparency. The above indicated preferred values take that into account.
- BaO stays in the residual glass. It has been observed that it helps in having a good transparency but its amount has to be limited to keep enough crystallinity and a high strain point, hence the above indicated preferred range.
- the precursor glass as well as the glass-ceramics are environmentally free (are arsenic and antimony free).
- the precursor glass is easily formed.
- the glass-ceramics are transparent and display a high transmission above 400 nm which, combined with a high strain point, more particularly makes them suitable as superstrate for photovoltaic cells.
- Some of the glass-ceramics are more particularly suitable to support the high temperature growth of a mono crystalline or poly crystalline semiconductor layer.
- Such growth may consist in the epitaxial thickening of a seed layer formed on the glass-ceramic material.
- the seed layer may be a large grain polycrystalline silicon layer formed by Aluminum Induced Crystallization or Aluminum Induced Layer Exchange (O. Nast, T. Puzzer, L.M. Koschier, A.B. Sproul, S.R. Wenham, Appl. Phys. Lett. 73 (1998) 3214), or may be a monocrystalline silicon layer (WO 2008/121262).
- the epitaxial thickening of such layers is advantageously performed at temperatures above 800 °C, and more advantageously performed at temperatures above 1000°C (I. Gordon et al, Solar Energy Materials & Solar Cells 94 (2010) 381-385).
- Another means of achieving a high quality polycrystalline silicon layer is to perform a high temperature rapid thermal annealing step of a previously grown polycrystalline silicon layer (B. Rau et al, Materials Science and Engineering B 159-160 (2009) 329-332).
- Photovoltaic cells usually include at least one transparent conductive layer located between the superstrate and the at least one semiconductor absorber layer.
- a transparent conductive layer allows the collection of the charge carriers generated in the semiconductor absorber layer, while allowing most of the photons to reach the semiconductor absorber layer.
- the transparent conductive layer may be a transparent conductive oxide layer, or more advantageously, in the case of an epitaxial thickening of a seed layer, may be the seed layer itself in the event that it is a highly doped layer.
- the transparent conductive layer usually has significant absorption below a wavelength of 400 nm, which does not result in the generation of collectable charge carriers. Therefore a superstrate should preferably have a high transmission for wavelengths above 400 nm.
- this semi-transparent conductive layer usually has significant absorption up to a wavelength of about 450 nm.
- a superstrate should preferably have a high transmission for wavelengths above 450 nm. In this way the glass-ceramics of the invention are particularly suitable as superstates for photovoltaic cells.
- the present disclosure relates to alumino-silicate glass materials which are precursor of the glass-ceramic materials described above.
- Such glass materials advantageously have the compositions indicated above (for the glass-ceramics).
- the level of zirconium oxide can be kept at a low enough level to limit devitrification.
- the co- presence of Ti0 2 and Zr0 2 allows the requirements to be satisfied.
- the present invention also relates to articles made of glass-ceramic materials described above.
- Such glass-ceramic articles may present any shape and may be aimed to any use.
- they consist in a sheet.
- Such sheets generally have a thickness in the range of 0.5 to 4 mm.
- Such sheets are advantageously used as support (substrate) for semiconductor thin films.
- the present disclosure relates to a method for manufacturing an article made of a glass-ceramic material as described above.
- Said method successively includes melting of a batch mixture of raw materials able to vitrify, said batch mixture containing Sn0 2 as refining agent, followed by refining of the molten glass obtained, cooling of the refined molten glass obtained, and simultaneously forming it into a desired form for the targeted article, and ceramming of said formed glass, said batch mixture being a precursor of a glass-ceramic material as described above.
- Said method is characteristically carried out with a suitable mineral batch mixture (including Sn0 2 as fining agent, Ti0 2 and Zr0 2 as nucleating agents and less than 100 ppm of Fe 2 0 3 , advantageously in the amounts as more precisely described above) and with a suitable heat-treatment which provides a spinel glass-ceramic.
- a suitable mineral batch mixture including Sn0 2 as fining agent, Ti0 2 and Zr0 2 as nucleating agents and less than 100 ppm of Fe 2 0 3 , advantageously in the amounts as more precisely described above
- the ceramming treatment generally comprises the two steps: a nucleation step (in the 700-850°C range) and a step of crystal growth (in the 850 -
- the forming step of said method is advantageously carried out to produce a sheet.
- it very advantageously consists in rolling (between rollers) or in a float process.
- the produced sheet generally has a thickness of 0.5 to 4 mm.
- Any sheet produced by the above method is opportunely a part of a structure including, further to said sheet, at least one layer made of a semi-conductor (arranged on said sheet).
- a structure constitutes a further subject-matter.
- the disclosure relates to electronic and optoelectronic devices comprising such a structure (glass-ceramic sheet + at least one layer made of a semi-conductor).
- Such devices may consist in a photovoltaic device, a flat panel display device, a liquid crystal display device. Said list is in no way exhaustive.
- the raw materials in proportions (weight proportions expressed as oxides) copied out in the first part of Table 1 hereafter, have been mixed carefully for producing batches of 1 kg of precursor glass. It has to be noted that said raw materials includes impurities (as traces), more particularly traces of Fe 2 C"3.
- the transmission measurements have been performed on 1 mm thick polished samples with a spectrophotometer equipped with an integrating sphere (this allows to measure the total, i.e. direct + diffuse, transmission).
- the lines "T 80%", “T 85%” and “T 90%” (of the second part Table 1 hereafter) give the wavelengths (in nm) at which the transmission values of 80%>, 85% and 90% are respectively reached. The lower values are better.
- the temperature is decreased to the test temperature, at 10°C/min; maintenance at the test temperature for 17h;
- Examples A, B, C and D do not belong to the invention. They are comparative examples.
- the glass of comparative example A contains AS 2 O 3 . It is a glass according to US Patent No. 5,968,857.
- the glass of comparative example B has quasi the same composition as the one of the glass of comparative example A. However, its composition is free of AS 2 O 3 . As explained above, it displays a low transmission.
- the glass of comparative example C does not contain arsenic but a lower titanium level than the glass of comparative example B. Its transmission is higher but still low.
- the glass of comparative example D contains a lower level of iron than the one of comparative example C. It displays a higher transmission but still much lower than the one of comparative example A (with AS 2 O 3 ).
- Examples 1-6 are inventive.
- Example 1 is preferred.
- example B is low and that transmission of examples A, 1 and 3 is higher than 80% for any wavelength above 450nm and higher than 85% for any wavelength higher than 520 nm. It also shows that the transmission of example 1 is especially interesting with a transmission higher than 80% for any wavelength higher than 400 nm.
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Abstract
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JP2013537777A JP6049141B2 (ja) | 2010-11-04 | 2011-11-02 | 可視透過率の高い無ヒ素スピネルガラスセラミック |
CN201180062746.XA CN103298760B (zh) | 2010-11-04 | 2011-11-02 | 具有高可见光透射率的不含砷的尖晶石玻璃-陶瓷 |
KR1020137014308A KR101951963B1 (ko) | 2010-11-04 | 2011-11-02 | 높은 가시광선 투과율을 갖는 비소가 없는 스피넬 유리-세라믹 |
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EP10306207.1 | 2010-11-04 | ||
EP10306207.1A EP2450320B1 (fr) | 2010-11-04 | 2010-11-04 | Vitrocéramiques transparentes de spinelle dépourvues de As2O3 et de Sb2O3 |
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PCT/US2011/058903 WO2012061464A1 (fr) | 2010-11-04 | 2011-11-02 | Vitrocéramiques à structure spinelle exemptes d'arsenic à transmission de lumière visible élevée |
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US (1) | US8853110B2 (fr) |
EP (1) | EP2450320B1 (fr) |
JP (1) | JP6049141B2 (fr) |
KR (1) | KR101951963B1 (fr) |
CN (1) | CN103298760B (fr) |
ES (1) | ES2443592T3 (fr) |
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JP2014500844A (ja) | 2014-01-16 |
KR101951963B1 (ko) | 2019-04-22 |
CN103298760A (zh) | 2013-09-11 |
US8853110B2 (en) | 2014-10-07 |
JP6049141B2 (ja) | 2016-12-21 |
EP2450320B1 (fr) | 2014-01-08 |
TWI545097B (zh) | 2016-08-11 |
US20120114955A1 (en) | 2012-05-10 |
ES2443592T3 (es) | 2014-02-19 |
CN103298760B (zh) | 2015-09-30 |
KR20140005168A (ko) | 2014-01-14 |
EP2450320A1 (fr) | 2012-05-09 |
TW201228964A (en) | 2012-07-16 |
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