WO2012042963A1 - 固体撮像素子及び撮像装置 - Google Patents
固体撮像素子及び撮像装置 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Definitions
- the present invention relates to a solid-state imaging device in which phase difference pixels are formed and an imaging apparatus equipped with the solid-state imaging device.
- phase difference pixel of the phase difference method (pupil division method) on an image sensor (solid-state imaging device) such as a CCD type or CMOS type, it is possible to measure the distance to the subject using the detection signal of the phase difference pixel, It is possible to increase the speed of autofocus. It is also possible to generate a stereoscopic image of the subject from the subject image captured by the phase difference pixels.
- phase difference pixels that perform phase difference type pupil division, for example, those described in Patent Documents 1 and 2 below are known.
- the phase difference pixel of Patent Document 1 is configured by mounting one microlens on a plurality of adjacent pixels.
- the phase difference pixel of Patent Document 2 is configured by covering a part of a microlens mounted on each pixel with a light shielding film.
- a phase difference pixel may be obtained by making the light-shielding film opening of each pixel small and decentering.
- one pixel is shared by a plurality of pixels, a part of the micro lens of each pixel is shielded from light, or the light shielding film opening is narrowed to be eccentric.
- phase difference pixel In the case of a phase difference pixel in which one microlens is shared by multiple pixels, the curvature of the microlens must be increased to form a flat microlens. For this reason, there exists a subject that such a phase difference pixel has the low detection capability of phase difference information.
- phase difference pixel In the case of a phase difference pixel in which a part of the microlens is shielded from light or is made eccentric by narrowing the light shielding film opening, it is possible to obtain more accurate phase difference information as the light shielding film opening is narrowed and decentered. However, since the amount of light transmitted through the microlens and the light shielding film opening is reduced, there is a problem that the light use efficiency, that is, the sensitivity of the phase difference pixel is lowered.
- An object of the present invention is to provide a solid-state imaging device having a phase-difference pixel having high detection capability of phase difference information and high light utilization efficiency, and an imaging device equipped with the solid-state imaging device.
- the solid-state imaging device of the present invention includes a pixel group composed of a plurality of pixels for detecting a phase difference, An optical element provided on a light incident side upper layer of the pixel group; A groove portion formed in the optical element, wherein the groove portion asymmetrically receives incident light received in each pixel of the pixel group, and a side surface of the groove portion is a light reflecting surface.
- An imaging apparatus includes the above-described solid-state imaging device, a photographing lens that performs focusing on a subject, A control unit that performs distance measurement from a detection signal of each pixel of the pixel group of the solid-state imaging device to the subject and performs focusing control of the photographing lens.
- An imaging apparatus includes the above-described solid-state imaging device and a signal processing unit that takes a captured image signal detected by each pixel of the pixel group and generates a three-dimensional image of the subject.
- the phase difference information can be detected without sacrificing sensitivity.
- FIG. 5 is a schematic cross-sectional view taken along line AA in FIG. 4. It is explanatory drawing of the phase difference pixel of 2nd Embodiment of this invention. It is a cross-sectional schematic diagram of the phase difference pixel of 3rd Embodiment of this invention.
- FIG. 9 is a schematic cross-sectional view taken along line BB in FIG. 8. It is explanatory drawing of the phase difference pixel of 5th Embodiment of this invention.
- FIG. 11 is a schematic cross-sectional view taken along the line CC in FIG. 10. It is a cross-sectional schematic diagram of the phase difference pixel of 6th Embodiment of this invention. It is explanatory drawing of the phase difference pixel of 7th Embodiment of this invention.
- FIG. 14 is a schematic cross-sectional view taken along the line DD of FIG. 13. It is explanatory drawing of the phase difference pixel of 8th Embodiment of this invention.
- FIG. 16 is a schematic cross-sectional view taken along the line EE in FIG. 15. It is a cross-sectional schematic diagram of the phase difference pixel of 9th Embodiment of this invention. It is explanatory drawing of the phase difference pixel of 10th Embodiment of this invention.
- FIG. 19 is a schematic sectional view taken along line FF in FIG. 18. It is explanatory drawing of the phase difference pixel of 11th Embodiment of this invention.
- FIG. 21 is a schematic cross-sectional view taken along the line HH in FIG. 20. It is a cross-sectional schematic diagram of the phase difference pixel of 12th Embodiment of this invention.
- FIG. 1 is a functional block diagram of an imaging apparatus according to an embodiment of the present invention.
- the imaging apparatus of this embodiment is exemplified by a digital camera 10 that captures a still image or a moving image of a subject.
- the digital camera 10 includes a photographic lens 20, a solid-state imaging device 21, an analog signal processing unit 22, an analog / digital (A / D) conversion unit 23, a drive unit 24, and a flash 25.
- the solid-state imaging device 21 is placed on the back of the taking lens 20 and is disposed on the image plane.
- the analog signal processing unit 22 performs analog processing such as automatic gain adjustment (AGC) and correlated double sampling processing on analog image data output from the solid-state imaging device 21.
- AGC automatic gain adjustment
- the A / D converter 23 converts the analog image data output from the analog signal processor 22 into digital image data.
- the drive unit 24 performs drive control of the A / D conversion unit 23, the analog signal processing unit 22, the solid-state imaging device 21, and the photographing lens 20 according to instructions from a system control unit (CPU) 29 described later.
- the drive unit 24 includes a timing generator.
- the flash 25 emits light according to an instruction from the CPU 29.
- the digital camera 10 of this embodiment further includes a digital signal processing unit 26, a compression / decompression processing unit 27, a display unit 28, a system control unit (CPU) 29, an internal memory 30 such as a frame memory, and a media interface.
- An (I / F) unit 31 and a bus 40 that connects them to each other are provided.
- the digital signal processing unit 26 takes in the digital image data output from the A / D conversion unit 23 and performs interpolation processing, white balance correction, RGB / YC conversion processing, and the like.
- the compression / decompression processing unit 27 executes a process of compressing the image data into image data such as JPEG format or conversely decompressing the image data.
- the display unit 28 displays a menu or the like, and displays a through image (live view image) or a captured image.
- the CPU 29 performs overall control of the entire digital camera.
- a media interface (I / F) unit 31 performs interface processing with a recording medium 32 that stores JPEG image data and the like.
- the system control unit 29 is connected to an operation unit 33 for inputting instructions from the user.
- the solid-state imaging device 21 to be described in detail later may be a CCD type or a CMOS type, and the pixels only need to be arranged in a two-dimensional array.
- phase difference pixels are provided as a part of pixels in a configuration described later.
- the CPU 29 captures the detection signal of the phase difference pixel, analyzes the detection signal of the phase difference pixel using the digital signal processing unit 26, and performs distance measurement to the subject. Then, the CPU 29 moves the focus alignment lens of the photographing lens 20 via the drive unit 24 based on the distance measurement result to focus on the subject.
- all the pixels in the effective pixel area of the solid-state imaging device 21 may be paired as two pixels as phase difference pixels.
- parallax occurs because the light incident direction of one pixel and the other pixel of each pair is different.
- FIG. 2 is an explanatory diagram of the phase difference pixel according to the first embodiment of the present invention.
- Four pixels aligned in the horizontal direction are illustrated, and a semiconductor substrate 40 is provided with a photodiode (PD) corresponding to each pixel.
- PD photodiode
- a phase difference pixel is formed in which two photodiodes PD1 and PD2 adjacent in the horizontal direction are paired.
- a well-known wiring layer in the case of a CMOS type
- charge transfer electrode in the case of a CCD type
- a light shielding film etc.
- a color filter layer 41 is laminated thereon.
- a micro lens (MCL) 43 corresponding to each pixel is formed thereon.
- a refractive index layer (intermediate refractive index layer) 45 having a refractive index intermediate between both refractive indexes is provided.
- the optical element (intermediate refractive index layer 45, microlens 43) between every other photodiode and the adjacent photodiode is parallel to the optical axis of the photographing lens 20 in FIG.
- a slit (groove) 46 is provided.
- the slit 46 is filled with the same material as that of the low refractive index layer 44.
- FIG. 3 is a graph showing a simulation result obtained by examining the incident angle dependency of the sensitivity of the two photodiodes PD1 and PD2 constituting the phase difference pixel.
- the light incident angle ⁇ (see the upper right part of FIG. 2) is taken on the horizontal axis, and the sensitivity is taken on the vertical axis. According to this simulation result, it can be seen that the light receiving sensitivity of the two phase difference pixels PD1 and PD2 as a pair has a light incident angle dependency.
- phase difference pixels PD1 and PD2 do not block a part of the microlens, so that there is no reduction in sensitivity.
- this side surface is not a rough state but a mirror surface.
- FIG. 4 is a schematic view of the surface of a solid-state imaging device in which the pair of phase difference pixels described in FIG. 2 is provided at discrete positions on the light receiving surface.
- the microlenses stacked on each pixel are indicated by a circle, and the other signal readout units and the like are not shown.
- FIG. 5 is a schematic cross-sectional view taken along line AA in FIG.
- the solid-state imaging device of the embodiment shown in FIG. 5 is configured such that a flattening layer 42 is provided instead of the color filter layer 41 of FIG.
- phase difference pixel pairs 50 are arranged at discrete positions (every two pixels in the illustrated example) of pixel rows extending in the horizontal direction from the center of the light receiving surface, and the pixels of each pair extend in the vertical direction. Divided by slits 46.
- phase difference pixel pairs 51 are arranged at discrete positions (every two pixels in the illustrated example), and a slit extending horizontally between the pixels of each pair. 46.
- each pair of phase difference pixels of the present embodiment is a twin-lens phase difference detection pixel.
- FIG. 6 is an explanatory diagram of a phase difference pixel according to the second embodiment of the present invention.
- phase difference pixel groups 52 are provided at discrete positions on the light receiving surface of the solid-state imaging device 21 at the center of the light receiving surface and every four pixels in the horizontal and vertical directions.
- the four pixels are separated by a cross-shaped slit 47 in plan view.
- a four-eye type phase difference pixel is detected in which the phase difference in the vertical direction and the horizontal direction is detected based on the group of phase difference pixels 52.
- a rectangular groove portion surrounding the pixel group may be used.
- a common microlens can be mounted on a pixel group having a cross-shaped groove portion or a rectangular groove portion, as in the embodiment of FIG. 15 described later.
- FIG. 7 is an explanatory diagram of a phase difference pixel according to the third embodiment of the present invention.
- the phase difference pixels are divided by the slits 46 and 47, and a low refractive index material is embedded in the slit.
- the slits 46 and 47 were air gap portions.
- a metal plate 48 is embedded in the slits 46 and 47.
- the metal plate 48 is formed, for example, by laminating the intermediate refractive index layer 45, opening the slits 46 and 47 by etching, and then depositing metal to fill the slits 46 and 47. Then, after the metal plate 48 is embedded, the solid-state imaging device 21 can be manufactured by polishing the surface of the intermediate refractive index layer 45 by CMP or the like.
- the metal plate 48 may be embedded in the intermediate refractive index layer 45 instead of the slits 46 and 47.
- the same effect as in the first and second embodiments can be obtained.
- light exceeding the condition for total reflection on the light reflecting surface is transmitted through the slit. To do.
- a metal surface having a high light reflectance is used as the light reflecting surface as in this embodiment, all incident light can be reflected.
- the embodiment described above is an example applied to a solid-state imaging device in which each pixel is arranged in a square lattice pattern.
- the present invention can be similarly applied to a so-called honeycomb pixel arrangement in which even-numbered pixel rows are shifted by 1 ⁇ 2 pixel pitch with respect to odd-numbered pixel rows.
- the slits 46 and 47 and the metal plate 48 are inclined at 45 degrees.
- FIG. 8 is an explanatory diagram of a solid-state imaging device according to the fourth embodiment of the present invention
- FIG. 9 is a schematic cross-sectional view taken along the line BB of FIG.
- all the pixels in the effective pixel region are phase difference pixels. That is, every other row is provided with a vertical slit 49 over the entire light receiving surface. Also in the configuration of the present embodiment, the slit 49 may be filled with metal, as in the embodiment of FIG.
- the phase difference information can be acquired from all the pixels by the binocular system, and further, the binocular 3D image can be acquired by the single solid-state imaging device 21. That is, a subject image viewed with the right eye can be captured with the left pixel of each slit 49, and a subject image viewed with the left eye can be captured with the right pixel of each slit 49.
- each pixel is a phase difference pixel, it is not a configuration in which a part of the microlens is shielded from light or a configuration in which the opening of the light shielding film is narrowed and decentered. For this reason, it is possible to capture a stereoscopic image of the subject without reducing the sensitivity. In addition, ranging to the subject is possible with all pixels.
- the slits 49 may be formed in the horizontal direction (row direction) instead of being provided in the vertical direction (column direction). In this case, phase difference information in the vertical direction (vertical direction) can be acquired. Further, in the so-called honeycomb pixel array solid-state imaging device in which the pixel array is shifted by 45 degrees, the formation direction of the light reflection surface by the slit 49 may be similarly inclined by 45 degrees.
- FIG. 10 is an explanatory diagram of a phase difference pixel according to the fifth embodiment of the present invention
- FIG. 11 is a schematic cross-sectional view taken along the line CC of FIG.
- each of the two pixels between the adjacent slits 49 has a microlens mounted thereon.
- two pixels between the adjacent slits 49 share one elliptical microlens 43a.
- the microlens by sharing one microlens with two phase difference pixels, in addition to the phase difference information based on whether the light reflection surface by the slit 49 is on the left or right, the microlens The phase difference of light separation is added, and the phase difference detection capability is improved.
- FIG. 12 is a schematic cross-sectional view of a phase difference pixel according to the sixth embodiment of the present invention.
- the arrangement of the pixels in the plan view is the same as the arrangement in FIG.
- the surface of the intermediate refractive index layer 45 is a flat surface.
- the present embodiment is different from the embodiment of FIG. 11 in that the thickness of the intermediate refractive index layer 45a is a uniform thickness and is a curved shape along the surface of the microlens 43a. According to this embodiment, the light separation effect due to the lens effect on the surface of the intermediate refractive index layer 45a is added, and the phase difference detection capability is further improved.
- FIG. 13 is an explanatory diagram of a phase difference pixel according to the seventh embodiment of the present invention
- FIG. 14 is a schematic cross-sectional view taken along the line DD of FIG.
- the 9 ⁇ 3 pixel groups that are 3 ⁇ 3 closest to each other are taken as one group, and slits 61 that extend in the vertical direction are provided for every three pixels in the horizontal direction so that each group is separated on the entire light receiving surface. Further, a slit 62 extending in the horizontal direction is provided every three pixels in the vertical direction.
- the three-dimensional image becomes smoother as the number of eyes increases.
- FIG. 15 is an explanatory diagram of a phase difference pixel according to the eighth embodiment of the present invention
- FIG. 16 is a schematic cross-sectional view taken along the line EE of FIG.
- each group of 9 pixels has a microlens 43.
- a group of 9 pixels share one flat microlens 43b.
- Each group of 9 pixels shares one microlens 43b as in the present embodiment, so that not only the phase difference due to the positional relationship between the 9 pixels and the light reflecting surface by the slits 61 and 62 but also light separation.
- the phase difference can also be detected, and the phase difference detection performance is further improved.
- the phase difference of each of the surrounding 8 pixels can be obtained with reference to the detection signal at the center of 9 pixels.
- FIG. 17 is a schematic cross-sectional view of a phase difference pixel according to the ninth embodiment of the present invention.
- the present embodiment is different from the embodiment of FIG. 15 in that the shape of the intermediate refractive index layer 45b is a curved surface along the surface of the microlens 43b serving as a base.
- the light separation effect due to the lens effect on the surface of the intermediate refractive index layer 45b is added, and the phase difference detection capability is further improved.
- FIG. 18 is an explanatory diagram of a phase difference pixel according to the tenth embodiment of the present invention
- FIG. 19 is a schematic cross-sectional view taken along the line FF of FIG.
- the basic structure of the cross section is the same as that of the embodiment of FIG.
- this embodiment is different from the embodiment of FIG. 12 in that a color filter layer 41 is provided instead of the planarization layer 42 of the embodiment of FIG.
- a plurality of pixels (PD) arranged in a two-dimensional array are not a square lattice array but a so-called honeycomb pixel array. That is, even-numbered pixel rows are formed with a 1 ⁇ 2 pixel pitch shifted from odd-numbered pixel rows. As a result, the slits 49 formed every two pixels are provided so as to extend in an oblique direction.
- the pixels are arranged in a square lattice, and the three primary color RGB color filters are arranged in a Bayer arrangement. Further, when only even pixel rows are viewed, the pixels are similarly arranged in a square lattice, and RGB color filters are arranged in a Bayer array.
- the pixels adjacent obliquely have the same color filter.
- Diagonal pixel rows having G (green) color filters are provided every other row. Further, in the remaining diagonal pixel rows, two pixels having an R (red) color filter are consecutive, two pixels having a B (blue) color filter are next, and two pixels having an R color filter are two. Consecutive diagonal pixel rows, and conversely, two pixels having a B (blue) color filter are consecutive, two pixels having an R (red) color filter are next, and two pixels having a B color filter are two. Diagonal pixel rows with continuous pixels are alternately arranged with diagonal pixel rows having a G color filter interposed therebetween.
- one microlens 43a is mounted on the same color pixel that is diagonally continuous with two pixels.
- the phase difference pixel By incorporating a phase difference pixel into two pixels of the same color, it is not necessary to make the phase difference pixel a special color filter array.
- the two pixels of the same color are added to capture a three-dimensional high-sensitivity subject image, and the exposure time of each of the two pixels is changed to change the three-dimensional. It is possible to capture a subject image with a wide dynamic range.
- a color filter array mounted on the odd-numbered unit pixels a column in which R color filters and B color filters are alternately mounted, a B color filter, and an R color It is also possible to provide a configuration in which columns in which filters are alternately mounted are alternately provided, and only G color filters are mounted in even-numbered column unit pixels.
- a color filter array is called a honeycomb color filter array.
- FIG. 20 is an explanatory diagram of a phase difference pixel according to the eleventh embodiment of the present invention
- FIG. 21 is a schematic cross-sectional view taken along the line HH of FIG.
- the arrangement of each group is a square arrangement, and therefore, color filters of the same color are mounted in the same group, and RGB color filters are Bayer arranged in each group.
- one microlens 43b is laminated in each group, and the intermediate refractive index layer 45b is laminated in a lens shape on the microlens 43b.
- all the pixels are multi-eye phase difference pixels, and ranging to a subject and imaging of a three-dimensional subject image are possible.
- the color filter array of each group is not limited to the Bayer array, and may be a stripe array.
- FIG. 22 is a schematic sectional view of a phase difference pixel according to a twelfth embodiment of the present invention.
- the solid-state imaging devices of the first to eleventh embodiments are surface-illumination type solid-state imaging devices.
- a photodiode (PD) and a signal readout circuit are formed on the surface side of a semiconductor substrate, and a microlens or the like is formed on the upper layer on the surface side.
- PD photodiode
- a signal readout circuit is formed on the surface side of a semiconductor substrate, and a microlens or the like is formed on the upper layer on the surface side.
- a photodiode (PD) and a signal readout circuit are formed on the front surface side of the semiconductor substrate, a micro lens or the like is formed on the back surface side of the semiconductor substrate, and incident light from the subject is received on the back surface side of the semiconductor substrate, A signal charge corresponding to the amount of light entering the semiconductor substrate is detected by a photodiode (PD) on the surface side.
- the aperture ratio can be increased.
- FIG. 22 shows an embodiment in which the embodiment of FIG. 19 is applied to this back-illuminated solid-state imaging device.
- a wiring layer 30 of a signal readout circuit is formed on the front surface side of the semiconductor substrate 40, and an intermediate refractive index layer 45a provided with a microlens 43a and a slit 49 is formed on the back surface side.
- an intermediate refractive index layer 45a provided with a microlens 43a and a slit 49 is formed on the back surface side.
- a microlens or an intermediate refractive layer having a curved surface is provided immediately above the corresponding photodiode.
- the micro light is adjusted to match the oblique incident light as described in, for example, Japanese Patent Application Laid-Open No. 2009-87983.
- Scaling measures may be taken by performing scaling by shifting the lens or the like toward the center of the light receiving surface.
- a pixel group composed of a plurality of pixels for detecting a phase difference; An optical element provided on a light incident side upper layer of the pixel group; A groove formed in the optical element, wherein the groove is asymmetrical to incident light received by each pixel of the pixel group, and a side surface of the groove is a light reflecting surface.
- the solid-state imaging device according to (1) The pixel group is composed of two adjacent pixels, The optical element includes two microlenses respectively corresponding to the two pixels provided on the light incident side upper layer of the two pixels, The groove portion is a solid-state imaging device that separates the two microlenses.
- the solid-state imaging device is composed of four adjacent pixels,
- the optical element includes four microlenses corresponding to the four pixels provided on the light incident side upper layer of the four pixels,
- the groove is a solid-state image sensor formed in a cross shape in plan view so as to separate the four microlenses.
- the optical element is provided on a light incident side upper layer of the plurality of pixels of the pixel group,
- the groove part is a solid-state imaging device formed so as to surround the outer periphery of the optical element.
- the solid-state imaging device according to any one of (2) to (4), An intermediate refractive index layer formed on the light incident side upper layer of the microlens and having a lower refractive index than the microlens; A low refractive index layer formed on the light incident side upper layer of the intermediate refractive index layer and having a lower refractive index than the intermediate refractive index layer, The groove is also formed in the intermediate refractive index layer, A solid-state imaging device in which the same material as that of the low refractive index layer is embedded in the groove.
- the solid-state imaging device according to any one of (2) to (4), An intermediate refractive index layer formed on the light incident side upper layer of the microlens and having a lower refractive index than the microlens; A low refractive index layer formed on the light incident side upper layer of the intermediate refractive index layer and having a lower refractive index than the intermediate refractive index layer,
- the groove portion is a solid-state imaging device in which the inside is filled with a material having high light reflectance.
- the solid-state imaging device according to any one of (1) to (7), A plurality of the pixel groups are provided; The solid-state image sensor in which the plurality of pixel groups are continuously provided on the entire surface of the light-receiving surface of the solid-state image sensor.
- the optical element is a solid-state imaging element having a single microlens that covers a plurality of pixels of the pixel group in common.
- the solid-state imaging device according to (4), A plurality of the pixel groups are provided; The plurality of pixel groups are continuously provided on the entire light receiving surface, The optical element covers the pixels of each pixel group in common, and has a microlens corresponding to each pixel group.
- An intermediate refractive index layer formed of a material having a lower refractive index than the material of the microlens on the light incident side upper layer of the microlens;
- a low refractive index layer formed on the light incident side upper layer of the intermediate refractive index layer and having a lower refractive index than the intermediate refractive index layer;
- Have The groove is formed in the intermediate refractive index layer, and the same material as that of the low refractive index layer is embedded in the groove.
- the solid-state imaging device A plurality of the pixel groups are provided; The plurality of pixel groups are continuously provided on the entire light receiving surface, The optical element covers the pixels of each pixel group in common, and has a microlens corresponding to each pixel group,
- Solid-state image sensor An intermediate refractive index layer formed of a material having a lower refractive index than the material of the microlens on the light incident side upper layer of the microlens; A low refractive index layer formed on the light incident side upper layer of the intermediate refractive index layer and having a lower refractive index than the intermediate refractive index layer; Have The groove is also formed in the intermediate refractive index layer, The groove portion is a solid-state imaging device in which the inside is filled with a material having high light reflectance.
- the solid-state imaging device according to any one of (9) to (13),
- the pixel group is arranged in a square lattice on the light receiving surface of the solid-state image sensor, Each pixel in each pixel group has the same color filter,
- the solid-state imaging device according to any one of (9) to (13), The odd-numbered row of pixel groups and the even-numbered row of pixel groups formed on the light-receiving surface of the solid-state imaging device are formed by being shifted by 1 ⁇ 2 pitch.
- Each pixel in each pixel group has the same color filter,
- the color filters of the pixel groups in the odd rows are arranged in a Bayer array,
- a solid-state imaging device in which color filters of the pixel groups in even rows are arranged in a Bayer array.
- Each pixel in each pixel group has the same color filter,
- the pixel group in either the even column or the odd column has a green filter,
- the solid-state imaging device according to any one of (1) to (8);
- An imaging apparatus comprising: a control unit that performs distance measurement from a detection signal of each pixel of the pixel group of the solid-state imaging device to the subject and performs focusing control of the photographing lens.
- the solid-state imaging device according to any one of (9) to (16), An image pickup apparatus comprising: a signal processing unit that takes in a picked-up image signal detected by each pixel of the pixel group and generates a three-dimensional image of a subject. (19) The solid-state imaging device according to any one of (1) to (18), A solid-state imaging device that is a backside illumination type.
- phase difference information in order to obtain asymmetric optical information between phase difference pixels by providing a groove in the direction along the optical axis and totally reflecting incident light on the side surface of the groove without narrowing the opening of the light shielding film.
- the phase difference information can be obtained without sacrificing the sensitivity.
- the solid-state imaging device can measure a distance to a subject and can capture a focused subject image, and is useful when applied to an imaging device such as a digital camera, a mobile phone with a camera, or an electronic device with a camera.
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Abstract
Description
前記画素群の光入射側上層に設けた光学素子と、
前記光学素子に形成された溝部と、を備え
前記溝部は、前記画素群の各々の画素において受光する入射光を非対称とし、該溝部の側面が光反射面である。
前記固体撮像素子の前記画素群のそれぞれの画素の検出信号から前記被写体までの測距を行い前記撮影レンズの合焦制御を行う制御部とを備える。
(1) 位相差を検出する複数画素で構成された画素群と、
前記画素群の光入射側上層に設けた光学素子と、
前記光学素子に形成された溝部と、を備え
前記溝部は、前記画素群の各々の画素において受光する入射光を非対称とし、該溝部の側面が光反射面である固体撮像素子。
(2)(1)に記載の固体撮像素子であって、
前記画素群は隣接する2画素で構成され、
前記光学素子は前記2画素の光入射側上層に設けられた前記2画素にそれぞれ対応する2つのマイクロレンズを含み、
前記溝部は前記2つのマイクロレンズの間を分離する固体撮像素子。
(3)(1)に記載の固体撮像素子であって、
前記画素群は最隣接する4画素で構成され、
前記光学素子は該4画素の光入射側上層に設けられた前記4つ画素にそれぞれ対応する4つのマイクロレンズを含み、
前記溝部は前記4つのマイクロレンズの間を分離するように平面視において十字形に形成された固体撮像素子。
(4)(1)に記載の固体撮像素子であって、
前記光学素子は前記画素群の前記複数の画素の光入射側上層に設けられ、
前記溝部は前記光学素子の外周囲を包囲するように形成された固体撮像素子。
(5)(2)から(4)のいずれか1つに記載の固体撮像素子であって、
前記マイクロレンズの光入射側上層に形成され、該マイクロレンズより低屈折率である中間屈折率層と、
前記中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率である低屈折率層と、を有し、
前記溝部は前記中間屈折率層にも形成され、
該溝部内に前記低屈折率層と同じ材料が埋設される固体撮像素子。
(6)(2)から(4)のいずれか1つに記載の固体撮像素子であって、
前記マイクロレンズの光入射側上層に形成され、該マイクロレンズより低屈折率である中間屈折率層と、
前記中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率である低屈折率層と、を有し、
前記溝部はその内部が光反射率の高い材料で埋められた固体撮像素子。
(7)(2)又は(3)に記載の固体撮像素子であって、
該固体撮像素子の受光面の中心から周辺部に行くに従って、前記溝部が形成された前記マイクロレンズが該受光面の中心方向にずらして設けられる固体撮像素子。
(8)(1)から(7)のいずれか1つに記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群は固体撮像素子受光面の離散的な位置に設けられている固体撮像素子。
(9)(1)から(7)のいずれか1つに記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群は固体撮像素子受光面の全面に連続して設けられている固体撮像素子。
(10)(1)に記載の固体撮像素子であって、
前記光学素子は前記画素群の複数画素を共通に覆う1枚のマイクロレンズを有する固体撮像素子。
(11)(4)に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群が受光面の全面に連続して設けられ、
前記光学素子は各画素群の画素を共通に覆い、各画素群に対応するマイクロレンズを有し
固体撮像素子は、
該マイクロレンズの光入射側上層に該マイクロレンズの材料より低屈折率の材料で形成された中間屈折率層と、
該中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率の低屈折率層と、
を有し、
前記溝部は前記中間屈折率層にも形成され、該溝部内に前記低屈折率層と同じ材料が埋設される固体撮像素子。
(12)(11)に記載の固体撮像素子であって、
前記中間屈折率層は、その表面が前記マイクロレンズの表面の形状に倣う形状である固体撮像素子。
(13)(4)に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群が受光面の全面に連続して設けられ、
前記光学素子は各画素群の画素を共通に覆い、各画素群に対応するマイクロレンズを有し、
固体撮像素子は、
該マイクロレンズの光入射側上層に該マイクロレンズの材料より低屈折率の材料で形成された中間屈折率層と、
該中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率の低屈折率層と、
を有し、
前記溝部は前記中間屈折率層にも形成され、
前記溝部はその内部が、光反射率の高い材料で埋められた固体撮像素子。
(14)(9)から(13)のいずれか1つに記載の固体撮像素子であって、
画素群が固体撮像素子受光面に正方格子配列され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
画素群のカラーフィルタ配列がベイヤ配列又はストライプ配列となっている固体撮像素子。
(15)(9)から(13)のいずれか1つに記載の固体撮像素子であって、
固体撮像素子受光面に形成される奇数行の前記画素群と偶数行の前記画素群とが1/2ピッチづつずらして形成され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
奇数行の前記画素群のカラーフィルタがベイヤ配列され、
偶数行の前記画素群のカラーフィルタがベイヤ配列される固体撮像素子。
(16)(9)から(13)のいずれか1つに記載の固体撮像素子であって、
固体撮像素子受光面に形成される奇数行の前記画素群と偶数行の前記画素群とが1/2ピッチづつずらして形成され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
偶数列または奇数列のいずれか一方の画素群が緑色フィルタを持ち、
偶数列または奇数列の他方の画素群が群単位に赤色フィルタと青色フィルタを交互に持つ固体撮像素子。
(17)(1)から(8)のいずれか1つに記載の固体撮像素子と、
被写体までの合焦を行う撮影レンズと、
前記固体撮像素子の前記画素群のそれぞれの画素の検出信号から前記被写体までの測距を行い前記撮影レンズの合焦制御を行う制御部とを備える撮像装置。
(18)(9)から(16)のいずれか1つに記載の固体撮像素子と、
前記画素群のそれぞれの画素が検出した撮像画像信号を取り込み被写体の3次元画像を生成する信号処理部とを備える撮像装置。
(19)(1)から(18)のいずれか1つに記載の固体撮像素子であって、
裏面照射型である固体撮像素子。
本発明を詳細に又は特定の実施形態を参照して説明したが、本発明の精神と範囲を逸脱することなく様々な変更や修正を加えることができることは当業者にとって明らかである。
本出願は、2010年9月29日出願の日本特許出願(特願2010-220074)に基づくものであり、その内容はここに参照として取り込まれる。
21 固体撮像素子
26 デジタル信号処理部
29 システム制御部
40 半導体基板
41 カラーフィルタ層
42 平坦化層
43,43a マイクロレンズ(光学素子)
44 低屈折率層(空気など)
45,45a,45b 中間屈折率層(光学素子)
46,47,49,61,62 スリット(溝部)
48 金属板
Claims (19)
- 位相差を検出する複数画素で構成された画素群と、
前記画素群の光入射側上層に設けた光学素子と、
前記光学素子に形成された溝部と、を備え
前記溝部は、前記画素群の各々の画素において受光する入射光を非対称とし、該溝部の側面が光反射面である固体撮像素子。 - 請求項1に記載の固体撮像素子であって、
前記画素群は隣接する2画素で構成され、
前記光学素子は前記2画素の光入射側上層に設けられた前記2画素にそれぞれ対応する2つのマイクロレンズを含み、
前記溝部は前記2つのマイクロレンズの間を分離する固体撮像素子。 - 請求項1に記載の固体撮像素子であって、
前記画素群は最隣接する4画素で構成され、
前記光学素子は該4画素の光入射側上層に設けられた前記4つ画素にそれぞれ対応する4つのマイクロレンズを含み、
前記溝部は前記4つのマイクロレンズの間を分離するように平面視において十字形に形成された固体撮像素子。 - 請求項1に記載の固体撮像素子であって、
前記光学素子は前記画素群の前記複数の画素の光入射側上層に設けられ、
前記溝部は前記光学素子の外周囲を包囲するように形成された固体撮像素子。 - 請求項2から請求項4のいずれか1項に記載の固体撮像素子であって、
前記マイクロレンズの光入射側上層に形成され、該マイクロレンズより低屈折率である中間屈折率層と、
前記中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率である低屈折率層と、を有し、
前記溝部は前記中間屈折率層にも形成され、
該溝部内に前記低屈折率層と同じ材料が埋設される固体撮像素子。 - 請求項2から請求項4のいずれか1項に記載の固体撮像素子であって、
前記マイクロレンズの光入射側上層に形成され、該マイクロレンズより低屈折率である中間屈折率層と、
前記中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率である低屈折率層と、を有し、
前記溝部はその内部が光反射率の高い材料で埋められた固体撮像素子。 - 請求項2又は3に記載の固体撮像素子であって、
該固体撮像素子の受光面の中心から周辺部に行くに従って、前記溝部が形成された前記マイクロレンズが該受光面の中心方向にずらして設けられる固体撮像素子。 - 請求項1から請求項7のいずれか1項に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群は固体撮像素子受光面の離散的な位置に設けられている固体撮像素子。 - 請求項1から請求項7のいずれか1項に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群は固体撮像素子受光面の全面に連続して設けられている固体撮像素子。 - 請求項1に記載の固体撮像素子であって、
前記光学素子は前記画素群の複数画素を共通に覆う1枚のマイクロレンズを有する固体撮像素子。 - 請求項4に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群が受光面の全面に連続して設けられ、
前記光学素子は各画素群の画素を共通に覆い、各画素群に対応するマイクロレンズを有し
固体撮像素子は、
該マイクロレンズの光入射側上層に該マイクロレンズの材料より低屈折率の材料で形成された中間屈折率層と、
該中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率の低屈折率層と、
を有し、
前記溝部は前記中間屈折率層にも形成され、該溝部内に前記低屈折率層と同じ材料が埋設される固体撮像素子。 - 請求項11に記載の固体撮像素子であって、
前記中間屈折率層は、その表面が前記マイクロレンズの表面の形状に倣う形状である固体撮像素子。 - 請求項4に記載の固体撮像素子であって、
複数の前記画素群が設けられ、
前記複数の画素群が受光面の全面に連続して設けられ、
前記光学素子は各画素群の画素を共通に覆い、各画素群に対応するマイクロレンズを有し、
固体撮像素子は、
該マイクロレンズの光入射側上層に該マイクロレンズの材料より低屈折率の材料で形成された中間屈折率層と、
該中間屈折率層の光入射側上層に形成され、該中間屈折率層より低屈折率の低屈折率層と、
を有し、
前記溝部は前記中間屈折率層にも形成され、
前記溝部はその内部が、光反射率の高い材料で埋められた固体撮像素子。 - 請求項9から請求項13のいずれか1項に記載の固体撮像素子であって、
画素群が固体撮像素子受光面に正方格子配列され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
画素群のカラーフィルタ配列がベイヤ配列又はストライプ配列となっている
固体撮像素子。 - 請求項9から請求項13のいずれか1項に記載の固体撮像素子であって、
固体撮像素子受光面に形成される奇数行の前記画素群と偶数行の前記画素群とが1/2ピッチづつずらして形成され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
奇数行の前記画素群のカラーフィルタがベイヤ配列され、
偶数行の前記画素群のカラーフィルタがベイヤ配列される
固体撮像素子。 - 請求項9から請求項13のいずれか1項に記載の固体撮像素子であって、
固体撮像素子受光面に形成される奇数行の前記画素群と偶数行の前記画素群とが1/2ピッチづつずらして形成され、
各画素群のそれぞれの画素が同色のカラーフィルタを持ち、
偶数列または奇数列のいずれか一方の画素群が緑色フィルタを持ち、
偶数列または奇数列の他方の画素群が群単位に赤色フィルタと青色フィルタを交互に持つ
固体撮像素子。 - 請求項1から請求項8のいずれか1項に記載の固体撮像素子と、
被写体までの合焦を行う撮影レンズと、
前記固体撮像素子の前記画素群のそれぞれの画素の検出信号から前記被写体までの測距を行い前記撮影レンズの合焦制御を行う制御部と
を備える撮像装置。 - 請求項9から請求項16のいずれか1項に記載の固体撮像素子と、
前記画素群のそれぞれの画素が検出した撮像画像信号を取り込み被写体の3次元画像を生成する信号処理部と
を備える撮像装置。 - 請求項1から請求項18のいずれか1項に記載の固体撮像素子であって、
裏面照射型である固体撮像素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012536245A JP5538553B2 (ja) | 2010-09-29 | 2011-05-13 | 固体撮像素子及び撮像装置 |
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US13/852,268 US9461083B2 (en) | 2010-09-29 | 2013-03-28 | Solid-state image pickup element and image pickup apparatus |
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Also Published As
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CN103140925A (zh) | 2013-06-05 |
CN103140925B (zh) | 2016-02-10 |
JPWO2012042963A1 (ja) | 2014-02-06 |
JP5538553B2 (ja) | 2014-07-02 |
US9461083B2 (en) | 2016-10-04 |
US20130222546A1 (en) | 2013-08-29 |
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