WO2012033347A3 - 기재상에 3개의 결정축 배향이 모두 정렬된 종자 결정들을 2차 성장시켜 형성된 막 - Google Patents

기재상에 3개의 결정축 배향이 모두 정렬된 종자 결정들을 2차 성장시켜 형성된 막 Download PDF

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WO2012033347A3
WO2012033347A3 PCT/KR2011/006629 KR2011006629W WO2012033347A3 WO 2012033347 A3 WO2012033347 A3 WO 2012033347A3 KR 2011006629 W KR2011006629 W KR 2011006629W WO 2012033347 A3 WO2012033347 A3 WO 2012033347A3
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seed crystals
axis
substrate
film formed
crystal axes
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French (fr)
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WO2012033347A2 (ko
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윤경병
팜카오탄툼
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서강대학교산학협력단
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Priority to JP2013528118A priority Critical patent/JP6106589B2/ja
Priority to US13/821,813 priority patent/US9290859B2/en
Priority to EP11823780.9A priority patent/EP2615065B1/en
Publication of WO2012033347A2 publication Critical patent/WO2012033347A2/ko
Publication of WO2012033347A3 publication Critical patent/WO2012033347A3/ko

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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B39/00—Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
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    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0051—Inorganic membrane manufacture by controlled crystallisation, e,.g. hydrothermal growth
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/028—Molecular sieves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B37/00—Compounds having molecular sieve properties but not having base-exchange properties
    • C01B37/02—Crystalline silica-polymorphs, e.g. silicalites dealuminated aluminosilicate zeolites
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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    • C01B39/02—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof
    • C01B39/36—Pentasil type, e.g. types ZSM-5, ZSM-8 or ZSM-11
    • C01B39/38—Type ZSM-5
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    • C01B39/00—Compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites; Their preparation; After-treatment, e.g. ion-exchange or dealumination
    • C01B39/02—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof
    • C01B39/36—Pentasil type, e.g. types ZSM-5, ZSM-8 or ZSM-11
    • C01B39/38—Type ZSM-5
    • C01B39/40—Type ZSM-5 using at least one organic template directing agent
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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    • C30—CRYSTAL GROWTH
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2323/00—Details relating to membrane preparation
    • B01D2323/24—Use of template or surface directing agents [SDA]
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)

Abstract

본 발명은 기재 상에 각 비구형 종자 결정(non-spherical seed crystal)의 결정축 a축, b축 및 c축 모두가 일정한 규칙에 따라 배향되도록 정렬된 비구형 종자 결정들을 수득하는 제1단계; 및 종자 결정들을 성장시키는 용액에 상기 a축, b축 및 c축 배향이 모두 정렬된 종자 결정들을 노출시켜 2차 성장법을 이용하여, 상기 종자 결정들로부터 막을 형성 및 성장시키는 제2단계 를 포함하여, 박막(film) 또는 후막을 제조하는 방법; 및 상기 방법에 의해 제조된 막을 제공한다. 본 발명에 따른 제조방법에 의해서, 종자 결정 보다 큰 크기의 결정 또는 막을 제조할 수 있다.
PCT/KR2011/006629 2010-09-08 2011-09-07 기재상에 3개의 결정축 배향이 모두 정렬된 종자 결정들을 2차 성장시켜 형성된 막 WO2012033347A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013528118A JP6106589B2 (ja) 2010-09-08 2011-09-07 基質上に三つの結晶軸がすべて一様に整列した、種子結晶の２次成長によって形成された膜
US13/821,813 US9290859B2 (en) 2010-09-08 2011-09-07 Film formed by secondary growth of seed crystals, three crystal axes of which had all been uniformly oriented on substrate
EP11823780.9A EP2615065B1 (en) 2010-09-08 2011-09-07 Method for preparing a film formed by secondary growth of seed crystals, three crystal axes of which had all been uniformly oriented on a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100087935A KR101695496B1 (ko) 2010-09-08 2010-09-08 기재상에 3개의 결정축 배향이 모두 정렬된 종자 결정들을 2차 성장시켜 형성된 막
KR10-2010-0087935 2010-09-08

Publications (2)

Publication Number Publication Date
WO2012033347A2 WO2012033347A2 (ko) 2012-03-15
WO2012033347A3 true WO2012033347A3 (ko) 2012-06-21

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US (1) US9290859B2 (ko)
EP (1) EP2615065B1 (ko)
JP (1) JP6106589B2 (ko)
KR (1) KR101695496B1 (ko)
WO (1) WO2012033347A2 (ko)

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* Cited by examiner, † Cited by third party
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KR101421357B1 (ko) * 2011-12-30 2014-07-18 서강대학교산학협력단 합성젤 없는 조건에서 스팀을 이용하여 한 축 방향이 모두 수직으로 정렬된 제올라이트 필름 생성법
KR20130141040A (ko) * 2012-06-15 2013-12-26 인텔렉추얼디스커버리 주식회사 실리카라이트-1 또는 제올라이트 베타 종자 결정들의 표면으로부터 2차 성장만을 유도하는 결정 성장 합성젤
JP2015526366A (ja) * 2012-06-15 2015-09-10 インテレクチュアル ディスカバリー カンパニー リミテッド シリカライト−１または複数のゼオライトベータの種結晶の表面から２次成長のみを誘導する結晶成長合成ゲル
WO2013187541A1 (ko) * 2012-06-15 2013-12-19 인텔렉추얼 디스커버리 주식회사 적어도 하나의 표면의 일부 또는 전부가 편평한 기재 및 이의 용도
US10384947B2 (en) 2012-06-15 2019-08-20 Intellectual Discovery Co., Ltd. Substrate having at least one partially or entirely flat surface and use thereof
KR20130141042A (ko) * 2012-06-15 2013-12-26 인텔렉추얼디스커버리 주식회사 적어도 하나의 표면의 일부 또는 전부가 편평한 기재 및 이의 용도
TWI552879B (zh) * 2015-02-13 2016-10-11 國立高雄大學 高方向性抗腐蝕沸石膜之製備方法
JP7394607B2 (ja) * 2019-12-04 2023-12-08 国立大学法人長岡技術科学大学 結晶軸配向ゼオライト膜およびその製造方法

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Also Published As

Publication number Publication date
WO2012033347A2 (ko) 2012-03-15
KR20120025806A (ko) 2012-03-16
EP2615065A2 (en) 2013-07-17
EP2615065B1 (en) 2021-05-12
JP6106589B2 (ja) 2017-04-05
JP2013538779A (ja) 2013-10-17
US20130216772A1 (en) 2013-08-22
EP2615065A4 (en) 2014-11-05
KR101695496B1 (ko) 2017-01-11
US9290859B2 (en) 2016-03-22

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