WO2012029627A1 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
- Publication number
- WO2012029627A1 WO2012029627A1 PCT/JP2011/069179 JP2011069179W WO2012029627A1 WO 2012029627 A1 WO2012029627 A1 WO 2012029627A1 JP 2011069179 W JP2011069179 W JP 2011069179W WO 2012029627 A1 WO2012029627 A1 WO 2012029627A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- colloidal silica
- polishing composition
- polishing
- particle diameter
- particles
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 85
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 239000002245 particle Substances 0.000 claims abstract description 79
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000008119 colloidal silica Substances 0.000 claims abstract description 70
- 238000004062 sedimentation Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- -1 alkali metal salt Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000010980 cellulose Nutrition 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 150000004715 keto acids Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to a polishing composition mainly used for polishing an object to be polished made of a semiconductor device material, for example, a semiconductor wafer including a silicon wafer.
- Patent Documents 1 and 2 it is known to use non-spherical colloidal silica or colloidal silica having a bimodal particle size distribution as abrasive grains of a polishing composition, mainly for obtaining a higher polishing rate (for example, Patent Documents 1 and 2).
- an object of the present invention is to provide a polishing composition containing colloidal silica which has both excellent polishing rate and sedimentation stability.
- a polishing composition containing colloidal silica wherein the average aspect ratio of colloidal silica is A (dimensionless), and the average particle diameter of colloidal silica is D.
- the average aspect ratio of colloidal silica is A (dimensionless), and the average particle diameter of colloidal silica is D.
- E unit: nm
- F unit:%
- a composition is provided.
- the value obtained by the formula: A ⁇ B ⁇ D ⁇ E ⁇ F is preferably 30,000 or more.
- the volume ratio of the particles having a particle diameter of 50 nm or more in the colloidal silica and an aspect ratio of 1.2 or more is preferably 50% or more.
- the volume ratio of the particles having a particle diameter exceeding 300 nm in the colloidal silica is preferably less than 2%.
- polishing composition containing colloidal silica having both excellent polishing rate and sedimentation stability.
- the polishing composition of the present embodiment contains at least colloidal silica and is a polishing object made of a semiconductor device material, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer, or a dielectric substance or a conductive material formed on the wafer. It is mainly used in applications for polishing body material films.
- a semiconductor device material for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer, or a dielectric substance or a conductive material formed on the wafer. It is mainly used in applications for polishing body material films.
- the average aspect ratio of colloidal silica in the polishing composition is A (dimensionless), the average particle diameter of colloidal silica is D (unit: nm), the standard deviation of the particle diameter of colloidal silica is E (unit: nm),
- the product thereof that is, the value of A ⁇ D ⁇ E ⁇ F must be 350,000 or more. Yes, preferably 370,000 or more.
- the standard deviation of the aspect ratio of colloidal silica is B (dimensionless)
- the value of A ⁇ B ⁇ D ⁇ E ⁇ F is preferably 30,000 or more, more preferably 60,000 or more. It is.
- the aspect ratio of each particle in the colloidal silica can be obtained by dividing the length of the longest side of the smallest rectangle circumscribing the image of the particle by a scanning electron microscope by the length of the short side of the same rectangle.
- the average aspect ratio and the standard deviation of the aspect ratio of colloidal silica are the average value and the standard deviation of the aspect ratio of a plurality of particles within the field of view of a scanning electron microscope, and these are obtained using general image analysis software. Can be obtained.
- the particle diameter of each particle in the colloidal silica can be obtained as a diameter of a circle having the same area by measuring the area of the image of the particle with a scanning electron microscope.
- the average particle size and standard deviation of the particle size of colloidal silica are the average value and standard deviation of the particle size within the field of view of the scanning electron microscope, and these are also measured using general image analysis software. Can be obtained.
- the average aspect ratio of colloidal silica is relatively high and effective in polishing in colloidal silica. It is possible to obtain a high polishing rate because the particle size distribution of colloidal silica is relatively broad and the particle size distribution of colloidal silica is relatively broad.
- the volume fraction (F) of particles having a particle diameter of 1 to 300 nm in colloidal silica is essential to be 90% or more, and preferably 95% or more. When this value is 90% or more, more specifically 95% or more, it is possible to obtain high sedimentation stability because there are few coarse particles that easily settle in colloidal silica. . When the settling stability of the polishing composition is inferior, a large number of scratches occur on the surface of the object to be polished after polishing with the polishing composition, the smoothness of the surface is not good, The supply stability of the polishing composition in the interior cannot be obtained, and this causes inconveniences such as an unstable polishing rate. In addition, the volume of each particle
- the volume ratio of the particles having a particle diameter of 50 nm or more and an aspect ratio of 1.2 or more in the colloidal silica is preferably 50% or more, more preferably 60% or more.
- this value is 50% or more, more specifically 60% or more, the colloidal silica contains a relatively large number of particles having a size and aspect ratio that are particularly effective for polishing.
- the polishing rate by the composition can be further improved.
- the volume ratio of the particles having a particle diameter exceeding 300 nm in the colloidal silica is preferably less than 2%, more preferably less than 1.5%. If this value is less than 2%, more specifically less than 1.5%, the sedimentation stability of the polishing composition can be further improved.
- the colloidal silica content in the polishing composition is not particularly limited, but is generally preferably 0.1 to 20% by mass, more preferably 1.0 to 15% by mass, and still more preferably. Is 3.0 to 10% by mass.
- the pH of the polishing composition is appropriately set according to the type of the polishing object.
- the pH of the polishing composition is preferably, for example, 10 to 12 when the object to be polished is a silicon wafer, and preferably 6 to 10 when it is a compound semiconductor such as gallium arsenide. In the case of a semiconductor device, it is preferably 2 to 11.
- the pH of the polishing composition is preferably in the range of 2-4 or 9-11.
- the pH can be adjusted by adding an alkali or an acid to the polishing composition.
- the average aspect ratio A (dimensionless), average particle diameter D (unit: nm), standard deviation E (unit: nm), and particle diameter of the colloidal silica contained in the polishing composition of this embodiment are 1 to The product (value of A ⁇ D ⁇ E ⁇ F) of the volume content F (unit%) of the particles of 300 nm is 350,000 or more. This is because the average aspect ratio of colloidal silica is relatively high, the colloidal silica contains a relatively large number of particles having a size effective for polishing, and the particle size distribution of colloidal silica is relatively broad.
- the polishing composition of this embodiment can polish a polishing object at a high polishing rate.
- the reason why the volume ratio of the particles having a particle diameter of 1 to 300 nm in the colloidal silica contained in the polishing composition is 90% or more is that there are few coarse particles that easily settle in the colloidal silica.
- the polishing composition of this embodiment has high sedimentation stability. Therefore, according to the present embodiment, it is possible to provide a polishing composition containing colloidal silica having both excellent polishing rate and sedimentation stability.
- the embodiment may be modified as follows.
- the polishing composition of the above embodiment may further contain a known additive as required.
- a known additive for example, (a) alkali metal hydroxide, alkali metal salt, ammonia, ammonium salt, amine, amine compound, quaternary ammonium hydroxide, quaternary ammonium salt, etc., (b) hydrochloric acid, phosphoric acid , Sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid and other inorganic acids, or acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid , Organic acids such as gluconic acid, alanine, glycine, lactic acid, hydroxyethylidenephosphodiphosphonic acid (HEDP), nitrilotris [methylene phosphonic acid] (NTMP), phosphonobut
- the polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
- the polishing composition of the above embodiment may be used for purposes other than polishing a polishing object made of a semiconductor device material.
- a polishing composition was prepared by diluting a colloidal silica slurry with pure water and then adjusting the pH to 11.0 using a 48 mass% potassium hydroxide aqueous solution.
- the content of colloidal silica in the polishing composition is 10.0% by mass. Details of the colloidal silica contained in the polishing composition of each example, the value of the polishing rate measured using the polishing composition of each example, and the results of evaluating the sedimentation stability of the polishing composition of each example Table 1 shows.
- the “average aspect ratio” column in Table 1 shows the results of measuring the average aspect ratio of the colloidal silica in the polishing composition of each example.
- the “standard deviation of aspect ratio” column shows the result of measuring the standard deviation of the aspect ratio of colloidal silica in the polishing composition of each example.
- the particle diameter in the colloidal silica in the polishing composition of each example is 50 nm or more and The result of having measured the volume ratio of the particle
- the “average particle size” column in Table 1 shows the result of measuring the average particle size of colloidal silica in the polishing composition of each example.
- the “standard deviation of particle diameter” column shows the result of measuring the standard deviation of the particle diameter of colloidal silica in the polishing composition of each example.
- the average aspect ratio, average particle diameter, standard deviation of particle diameter, and particle diameter of the colloidal silica in the polishing composition of each example are 1 to 300 nm. The value obtained by multiplying the volume content of particles is shown.
- polishing is performed when the surface of a PE-TEOS (plasma-enhanced tetraethylsilicateorthosilicate) blanket wafer is polished under the polishing conditions shown in Table 2 using the polishing composition of each example. Indicates speed.
- the value of the polishing rate was determined according to the following calculation formula based on the difference in weight of the wafer before and after polishing measured using a precision electronic balance.
- the results of evaluating the sedimentation stability of the polishing composition by examining the presence or absence of solid aggregates are shown. “Defective” in the same column indicates that aggregates were observed over the entire bottom of the container, and “Slightly defective” indicates that aggregates were observed although not over the entire bottom of the container. Indicates that no agglomerates were observed.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Engineering (AREA)
Abstract
Description
表1の“沈降安定性”欄には、各例の研磨用組成物250mLを蓋付き透明樹脂容器に入れ、蓋を閉めて室温下にて5日間静置した後に、容器の底部を観察して固形の凝集物の有無を調べることにより、研磨用組成物の沈降安定性を評価した結果を示す。同欄中の“不良”は容器の底部の全体にわたり凝集物が認められたことを示し、“やや不良”は、容器の底部の全体にわたってではないものの凝集物が認められたこと、“良”は、凝集物が認められなかったことを示す。
Claims (4)
- コロイダルシリカを含有する研磨用組成物であって、コロイダルシリカの平均アスペクト比をA(無次元)、コロイダルシリカの平均粒子径をD(単位nm)、コロイダルシリカの粒子径の標準偏差をE(単位nm)、コロイダルシリカ中に占める粒子径が1~300nmである粒子の体積割合をF(単位%)としたとき、式:A×D×E×Fで求められる値が350,000以上であり、なおかつ、コロイダルシリカ中に占める粒子径が1~300nmである粒子の体積割合が90%以上であることを特徴とする研磨用組成物。
- コロイダルシリカのアスペクト比の標準偏差をB(無次元)としたとき、式:A×B×D×E×Fで求められる値は30,000以上である、請求項1に記載の研磨用組成物。
- コロイダルシリカ中に占める粒子径が50nm以上でかつアスペクト比が1.2以上である粒子の体積割合は50%以上である、請求項1又は2に記載の研磨用組成物。
- コロイダルシリカ中に占める粒子径が300nmを超える粒子の体積割合は2%未満である、請求項1~3のいずれか一項に記載の研磨用組成物。
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KR1020137007584A KR101805238B1 (ko) | 2010-08-31 | 2011-08-25 | 연마용 조성물 |
US13/818,554 US9157011B2 (en) | 2010-08-31 | 2011-08-25 | Polishing composition |
CN201180041128.7A CN103180931B (zh) | 2010-08-31 | 2011-08-25 | 研磨用组合物 |
EP11821644.9A EP2613344A4 (en) | 2010-08-31 | 2011-08-25 | POLISHING COMPOSITION |
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JP (1) | JP5941612B2 (ja) |
KR (1) | KR101805238B1 (ja) |
CN (1) | CN103180931B (ja) |
MY (1) | MY157041A (ja) |
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Cited By (2)
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AU2013257409B2 (en) * | 2012-11-19 | 2018-02-08 | Biosense Webster (Israel), Ltd. | Using location and force measurements to estimate tissue thickness |
JP7356924B2 (ja) | 2020-01-31 | 2023-10-05 | 日揮触媒化成株式会社 | 研磨用砥粒分散液 |
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JP5979872B2 (ja) * | 2011-01-31 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
JP5979871B2 (ja) * | 2011-03-09 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
JP6656867B2 (ja) * | 2015-09-30 | 2020-03-04 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物、磁気ディスク基板の製造方法および磁気ディスク基板 |
WO2017057478A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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JP6985116B2 (ja) * | 2017-11-17 | 2021-12-22 | 信越化学工業株式会社 | 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法 |
JP7253335B2 (ja) * | 2018-07-31 | 2023-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法および研磨用組成物を用いた研磨方法 |
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JP7356924B2 (ja) | 2020-01-31 | 2023-10-05 | 日揮触媒化成株式会社 | 研磨用砥粒分散液 |
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CN103180931A (zh) | 2013-06-26 |
US9157011B2 (en) | 2015-10-13 |
EP2613344A4 (en) | 2014-01-22 |
KR20130103513A (ko) | 2013-09-23 |
CN103180931B (zh) | 2016-01-20 |
EP2613344A1 (en) | 2013-07-10 |
TW201211221A (en) | 2012-03-16 |
JP2012054281A (ja) | 2012-03-15 |
US20130205682A1 (en) | 2013-08-15 |
TWI541334B (zh) | 2016-07-11 |
JP5941612B2 (ja) | 2016-06-29 |
KR101805238B1 (ko) | 2017-12-06 |
MY157041A (en) | 2016-04-15 |
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