WO2012014881A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- WO2012014881A1 WO2012014881A1 PCT/JP2011/066944 JP2011066944W WO2012014881A1 WO 2012014881 A1 WO2012014881 A1 WO 2012014881A1 JP 2011066944 W JP2011066944 W JP 2011066944W WO 2012014881 A1 WO2012014881 A1 WO 2012014881A1
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- substrate
- chamber
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- 239000000758 substrate Substances 0.000 title claims abstract description 341
- 238000012545 processing Methods 0.000 title claims abstract description 88
- 238000003672 processing method Methods 0.000 title claims description 11
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- 230000007246 mechanism Effects 0.000 claims abstract description 91
- 230000005540 biological transmission Effects 0.000 claims abstract description 77
- 238000012546 transfer Methods 0.000 claims description 72
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 230000037361 pathway Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- 238000005401 electroluminescence Methods 0.000 description 26
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- 230000000694 effects Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
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- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
Definitions
- the present invention relates to a substrate processing apparatus and a substrate processing method for forming, for example, an organic electroluminescence (hereinafter also referred to as organic EL) element.
- organic EL organic electroluminescence
- organic EL elements using organic electroluminescence (EL), which is a light-emitting device including an organic material layer, have been developed. Since organic EL elements emit light by themselves, they have advantages such as low power consumption and superior viewing angle as compared with liquid crystal displays (LCDs).
- LCDs liquid crystal displays
- the most basic structure of this organic EL element is a sandwich structure in which an anode (anode) layer, a light emitting layer and a cathode (cathode) layer are formed on a glass substrate.
- a transparent electrode made of ITO is used for the anode layer on the glass substrate.
- ITO Indium Tin Oxide
- Such an organic EL element is manufactured by sequentially forming a light emitting layer and a cathode layer on a glass substrate on which an ITO layer (anode layer) is formed in advance, and further forming a sealing film layer. Is common.
- a film forming process is performed after performing a cleaning process for removing contaminants such as organic substances adsorbed on the substrate surface. It is common to do. Therefore, a conventional organic EL film forming apparatus is equipped with a cleaning apparatus that performs the above-described cleaning process. Also, in a general semiconductor device manufacturing process other than the manufacturing of an organic EL element, a cleaning process for removing impurities and the like on the substrate is performed. For example, oxygen plasma treatment and UV-03 (ultraviolet irradiation treatment) are known as cleaning treatment methods.
- Patent Document 1 discloses an apparatus for manufacturing an organic EL display panel having a cleaning chamber that performs ultraviolet irradiation processing, a film forming chamber, and an intermediate chamber that connects the cleaning chamber and the film forming chamber.
- the organic EL display panel manufacturing apparatus described in Patent Document 1 has a configuration in which a cleaning chamber for performing cleaning processing (ultraviolet irradiation processing) is provided separately from the film formation chamber and the intermediate chamber.
- the increase in the size of the entire apparatus and the accompanying increase in manufacturing costs are problems.
- the size of one chamber (processing chamber) is large.
- the increase in size was a big problem.
- an increase in the number of chambers in the entire manufacturing apparatus has a problem that it leads to a decrease in processing throughput in the entire apparatus.
- an ultraviolet irradiation system is provided at the upper part of the cleaning chamber, and ultraviolet irradiation is performed with the substrate fixed at the lower center of the cleaning chamber.
- the amount of ultraviolet rays irradiated on the substrate surface for example, at the central portion and the peripheral portion may not be uniform.
- the substrate is not uniformly cleaned.
- an object of the present invention is to provide a substrate processing apparatus that can clean a substrate surface efficiently and uniformly in a short time without providing a cleaning chamber (chamber) for cleaning. It is an object to provide a substrate processing apparatus and a substrate processing method capable of improving the throughput. Furthermore, it aims at providing the substrate processing apparatus and substrate processing method which can wash
- a carry-in chamber for carrying a substrate, a film forming chamber for performing a film forming process on the substrate, and a substrate for transferring a substrate between the carry-in chamber and the film forming chamber.
- a substrate processing apparatus comprising a transfer chamber having a transfer mechanism, wherein the carry-in chamber and the transfer chamber are connected in an adjacent state, and a substrate is transferred to the outside of either the carry-in chamber or the transfer chamber.
- a light irradiation mechanism that irradiates light on the path, and a control unit that controls an irradiation amount and an irradiation intensity of light emitted from the light irradiation mechanism, and the carry-in chamber or the transport provided with the light irradiation mechanism
- a substrate processing apparatus wherein the chamber is provided with a transmission window that transmits light emitted from the light irradiation mechanism, and the light irradiated to the substrate from the light irradiation mechanism is irradiated while moving relative to the substrate.
- the substrate may be irradiated with light from the light irradiation mechanism when the substrate is transferred between the carry-in chamber and the transfer chamber.
- the light irradiation mechanism may irradiate light having a wavelength of 172 nm or less. Further, the light irradiation from the light irradiation mechanism to the substrate may be performed in an atmosphere having an oxygen partial pressure of 600 Pa or less.
- the transmission window may have a linear shape extending in a direction orthogonal to the substrate transport direction. Further, the transmission window is composed of a plurality of window portions, and the adjacent window portions are arranged so as to be separated from each other in the substrate transport direction, and are disposed so as to cover the substrate in a direction orthogonal to the substrate transport direction. May be.
- a substrate processing method comprising a cleaning process for cleaning a substrate and a film forming process for forming a film on the substrate, wherein the cleaning process is performed in an atmosphere having an oxygen partial pressure of 600 Pa or less.
- a substrate processing method is provided which is a step of irradiating the substrate with light having a wavelength of 172 nm or less.
- the substrate surface can be efficiently and uniformly cleaned in a short time without providing a cleaning chamber (chamber) in the substrate processing apparatus, and the throughput of the substrate processing can be improved.
- a substrate processing apparatus and a substrate processing method are provided. Furthermore, a substrate processing apparatus and a substrate processing method capable of efficiently cleaning a substrate even with a large substrate are provided.
- FIG. 1 It is a schematic plan view of the substrate processing apparatus concerning the modification of this invention.
- A It is sectional drawing of the permeation
- B is a plan view of a transmission window according to a modification of the present invention.
- A It is sectional drawing of the permeation
- B is a plan view of a transmission window according to a modification of the present invention. It is sectional drawing which looked at the permeation
- FIG. 6 is a graph showing electric field [MV / m] -current density [mA / cm 2 ] characteristics of a substrate subjected to baking treatment and VUV cleaning and an untreated substrate.
- 5 is a graph showing electric field [MV / m] -current density [mA / cm 2 ] characteristics in a substrate subjected to baking treatment / VUV cleaning and a substrate subjected only to baking treatment.
- FIG. 1 is an explanatory diagram of the manufacturing process of the organic EL element A manufactured by various apparatuses including the substrate processing apparatus 1 according to the first embodiment of the present invention.
- a substrate G having an anode (anode) layer 10 formed on its upper surface is prepared.
- the substrate G is made of a transparent material made of, for example, glass.
- the anode layer 10 is made of a transparent conductive material such as ITO (Indium Tin Oxide).
- ITO Indium Tin Oxide
- a light emitting layer (organic layer) 11 is formed on the anode layer 10 by vapor deposition.
- the light emitting layer 11 has, for example, a multilayer structure in which a hole transport layer, a non-light emitting layer (electron block layer), a blue light emitting layer, a red light emitting layer, a green light emitting layer, and an electron transport layer are stacked.
- a cathode (cathode) layer 12 made of, for example, Ag, Al or the like is formed on the light emitting layer 11 by, for example, sputtering using a mask.
- the light emitting layer 11 is patterned by, for example, dry etching the light emitting layer 11 using the cathode layer 12 as a mask.
- an insulating sealing film layer made of, for example, silicon nitride (SiN) so as to cover the periphery of the light emitting layer 11 and the cathode layer 12 and the exposed portion of the anode layer 10. 13 is formed.
- the sealing film layer 13 is formed by, for example, a ⁇ wave plasma CVD method.
- the organic EL device A thus manufactured can cause the light emitting layer 11 to emit light by applying a voltage between the anode layer 10 and the cathode layer 12.
- Such an organic EL element A can be applied to a display device and a surface light emitting element (illumination, light source, etc.), and can be used for various other electronic devices.
- a substrate processing apparatus 1 includes a light emitting layer 11 on a substrate G in which an anode layer 10 is formed as described in FIG.
- a film formation chamber (deposition chamber 40 described below) used when performing the film formation, and a processing chamber (hereinafter referred to as “cleaning process”) for pretreatment (cleaning process) of the substrate G when the substrate G is carried into the film formation chamber.
- cleaning process a processing chamber for pretreatment (cleaning process) of the substrate G when the substrate G is carried into the film formation chamber.
- FIG. 2 is a schematic cross-sectional view of the substrate processing apparatus 1 according to the first embodiment of the present invention.
- FIG. 3 is a schematic plan view of the substrate processing apparatus 1. 2 and 3, the substrate transport direction L when performing substrate processing is the right direction in the drawing.
- the substrate processing apparatus 1 is provided with a carry-in chamber 20 for carrying a substrate W, a transfer chamber 30 disposed adjacent to the carry-in chamber 20, and a transfer chamber 30.
- the film forming chamber 40 is configured.
- the carry-in chamber 20 and the transfer chamber 30 are connected via a gate valve 45, and the transfer chamber 30 and the film forming chamber 40 are connected via a gate valve 46.
- the carry-in chamber 20 is provided with a gate valve 47 for carrying a substrate into the carry-in chamber 20.
- a carry-in chamber 21 into which a substrate G is carried is provided inside the carry-in chamber 20, and a multistage support table 22 that supports the substrate G is arranged in the carry-in chamber 21.
- an exhaust port 24 communicating with a vacuum pump (not shown) is provided on the bottom surface of the carry-in chamber 21 so that the carry-in chamber 20 can be evacuated.
- an O 2 introduction port 25 for introducing oxygen gas and an N 2 introduction port 26 for introducing nitrogen gas as a purge gas are provided on the bottom surface of the carry-in chamber 21, and oxygen gas and nitrogen gas are introduced into the carry-in chamber 21. It is configured to be introduced as necessary.
- a transmission window 50 that is a quartz window, for example, is provided on the gate valve 45 side (the side connected to the transfer chamber 30) on the upper surface of the transfer chamber 20.
- the transmission window 50 has a linear shape extending in a direction orthogonal to the substrate transport direction L.
- the length a of the transmission window 50 is longer than the width b of the substrate G.
- a light irradiation mechanism 60 that is, for example, a xenon excimer lamp is installed immediately above the transmission window 50 (the upper vicinity), and the light irradiation mechanism 60 is large enough to cover the transmission window 50. is there.
- the light emitted from the light irradiation mechanism 60 is preferably so-called vacuum ultraviolet light (hereinafter also referred to as VUV: Ultra Ultra Violet) having a wavelength of 200 nm or less, and more preferably light having a wavelength of 172 nm or less.
- VUV light is irradiated through the transmission window 50 toward the inside of the carry-in chamber 20 (the carry-in chamber 21) (downward in FIG. 2). That is, when the substrate G is transported from the carry-in chamber 20 toward the transport chamber 30, when the substrate G passes immediately below the light irradiation mechanism 60, light is transmitted from the light irradiation mechanism 60 to the substrate G. 50 is irradiated.
- a transfer chamber 31 is provided inside the transfer chamber 30, and a substrate transfer mechanism 32 that transfers the substrate along the substrate transfer direction L is disposed in the transfer chamber 31.
- the substrate transfer mechanism 32 transfers the substrate G between the transfer chamber 20 and the transfer chamber 30 when the gate valve 45 is opened, and transfers the substrate G between the transfer chamber 30 and the film formation chamber 40 when the gate valve 46 is opened.
- an exhaust port 34, an O 2 introduction port 35, and an N 2 introduction port 36 are also provided on the bottom surface of the transfer chamber 31.
- a film forming chamber 43 is provided inside the film forming chamber 40, and a substrate supporting table 41 that supports the substrate G and a film forming material from above the substrate supporting table 41 are formed in the film forming chamber 43.
- a head 42 that is ejected to G and communicates with a film forming material supply unit (not shown) is disposed.
- the substrate support base 41 is configured to be movable in the substrate transport direction L by a rail mechanism (not shown), for example.
- an exhaust port 44 is provided on the bottom surface of the film forming chamber 43.
- the case where the head 42 is provided in a six-line type (in a state where six heads are connected) is shown as an example.
- Film forming materials corresponding to the hole transport layer, the non-light-emitting layer (electron block layer), the blue light-emitting layer, the red light-emitting layer, the green light-emitting layer, and the electron transport layer are ejected from the six heads 42. That is, the number of heads 42 and the configuration thereof should be changed as appropriate according to the type of film formed in the film forming chamber 40 and the number of film layers to be formed, and are not limited to the illustrated form. .
- the light irradiation mechanism 60 is provided with a control unit 52 that can control the irradiation amount and irradiation intensity of the light irradiated into the carry-in chamber 20.
- the control unit 52 is configured to be able to control the irradiation amount and irradiation intensity of light irradiating the substrate G to desired values.
- the control unit 52 is described as controlling the light irradiation mechanism 60 in the present embodiment, it is not always necessary to control only the light irradiation amount and the irradiation intensity.
- the cleaning conditions in the carry-in chamber 20, such as the flow rate of oxygen gas that sometimes flows into the carry-in chamber 20 (the carry-in chamber 21), may be controlled.
- actual measurement results will be illustrated and described for measurement data for suitably determining control by the control unit 52.
- the ITO work function is increased by irradiating the ITO (anode layer 10) on the substrate G to which an organic substance or the like is adhered with the vacuum ultraviolet light.
- the potential difference (energy difference) with the hole injecting and transporting layer in the light emitting layer 11 to be formed becomes small.
- the absolute value of the ITO work function is increased by performing VUV cleaning, the potential difference between the hole injection transport layer and the hole injection transport layer is reduced, and the transport of holes is facilitated only by giving a relatively low potential difference between them.
- the organic EL element A emits light efficiently.
- FIG. 4 shows that when scrub cleaning / ultrasonic cleaning is performed on a substrate on which ITO is formed, scrub cleaning / ultrasonic cleaning and annealing are performed, and scrub cleaning / ultrasonic cleaning / annealing VUV irradiation is performed. It is the graph which showed the measurement result which measured ITO work function about each case by the absolute value (size).
- there are two types of measurement values for example, scrub cleaning / ultrasonic cleaning 1 and scrub cleaning / ultrasonic cleaning 2 because data measurement was performed on two substrates (ITO) under the same conditions. It is.
- the substrate on which ITO is deposited is in a state where scrub cleaning / ultrasonic cleaning is performed (scrub cleaning / ultrasonic cleaning 1, scrub cleaning / ultrasonic cleaning 2 in FIG. 4) and
- the work function was about 5.00 eV
- the work function was performed up to VUV irradiation (VUV1, VUV2 in FIG. 4).
- the work function has increased to about 5.50 eV.
- the hole injection barrier between the ITO and the hole injection / transport layer is in a low state as described above, so that the power and time required for light emission of the organic EL element A are made efficient.
- the lifetime of the element is increased.
- the lifetime of the element is increased by, for example, each of an untreated substrate and a substrate after VUV cleaning by an analyzer in which a gas chromatograph (GC) and mass spectrometry (MS) are directly connected. The improvement is confirmed by analyzing the composition of the organic matter on the surface.
- GC gas chromatograph
- MS mass spectrometry
- FIG. 5 is a graph showing measurement results of measuring how much the cleaning effect differs by changing the light irradiation time when performing VUV irradiation on a substrate on which ITO is formed.
- the contact angle CA: Contact Angle
- the horizontal axis is Light irradiation time [sec] at the time of VUV irradiation (Initial is unprocessed state).
- the measurement result is graphed as [degree].
- the organic impurity which is the object of VUV irradiation has hydrophobicity, in FIG. A.
- the C.V. is larger than the untreated state (Initial in FIG. 5).
- A. The number of has decreased. From this, it can be seen that when VUV cleaning is performed on a substrate on which ITO is formed, a sufficient cleaning effect can be obtained even if the light irradiation time is short. For example, as shown in FIG. A. Is 2.1 [degree] (measured value at the time when 10 seconds have elapsed after the droplet is dropped), which is greatly reduced from 30.5 [degree] in the untreated state. That is, from the data shown in FIG. 5, when a substrate on which ITO is formed is irradiated with VUV light, a sufficient cleaning effect can be obtained simply by scanning the substrate with the irradiated light for a short time. it is obvious.
- FIG. 6 shows the flow rate (sccm) of oxygen (hereinafter also referred to simply as O 2 ) supplied at the time of VUV cleaning (the carry-in chamber 20 in this embodiment) and the contact angle C.I. A.
- O 2 oxygen
- the relationship with [degree] is shown in a graph.
- the O 2 flow rate at the place where the VUV cleaning is performed correlates with the desorption of organic substances from the substrate in the VUV cleaning. This is because light (VUV) irradiation in an O 2 atmosphere generates ozone (hereinafter also simply referred to as O 3 ) necessary to effectively desorb organic substances.
- the VUV cleaning process is performed by performing only the light irradiation without flowing O 2. (No gas in FIG. 6) A.
- the C.I. A The value of has not decreased. That is, it can be seen that the cleaning effect is not sufficiently ensured even if light irradiation is performed in a state where no O 2 is allowed to flow.
- O 2 is flowed when performing the VUV cleaning process (in the case of the flow rate 60 in FIG. 6, in the case of 300), the C.V. A.
- the value of is greatly reduced, and it can be seen that the washing is sufficiently performed.
- the case where the flow rate is 300 [sccm] is not necessarily C.I.
- A. Is not necessarily large (for example, the flow rate 60 and irradiation time 10 seconds in FIG. 6 are compared with the flow rate 300 and irradiation time 10 seconds). This is because the light irradiated with O 2 or O 3 is absorbed as described above, and sufficient light irradiation to the substrate is not performed. That is, when performing the VUV cleaning process, it is understood that it is preferable to flow O 2 at a predetermined flow rate to the place where the cleaning process is performed.
- the substrate G is carried into the carry-in chamber 20 (the carry-in chamber 21) from the gate valve 47 and fixed to the support base 22.
- the support base 22 is a multistage type, it is possible to carry a plurality of substrates G into the carry-in chamber 20 (the carry-in chamber 21).
- the inside of the carry-in chamber 20 (the carry-in chamber 21) is evacuated by the operation of a vacuum pump communicating with the exhaust port 24 in a sealed state.
- oxygen gas controlled to a suitable flow rate by the controller 52 is introduced from the O 2 introduction port 25 into the carry-in chamber 20 (load-in chamber 21).
- the introduction of the oxygen gas adjusts the pressure in the loading chamber 21 (pressure adjustment), and the gate valve 45 is opened in a state where the oxygen partial pressure in the loading chamber 21 is 600 Pa or less, more preferably about 300 Pa.
- the internal pressure of the transfer chamber 31 is also adjusted so that the internal pressure of the carry-in chamber 21 and the internal pressure of the transfer chamber 31 become the same pressure.
- the pressure adjustment in the carry-in chamber 21 may be performed only by introducing oxygen gas, but is performed by introducing nitrogen gas, which is an inert gas, from the N 2 inlet 26 into the carry-in chamber 21 simultaneously with the introduction of oxygen gas. It is also possible.
- the oxygen partial pressure in the carry-in chamber 21 and the transfer chamber 31 is set to 600 Pa or less (more preferably about 300 Pa) when the carry-in chamber 21 is irradiated with light that is so-called vacuum ultraviolet light through the transmission window 50. This is because if the oxygen partial pressure in the carry-in chamber 21 is higher than 600 Pa, oxygen in the carry-in chamber 21 absorbs light, and the substrate G may not be irradiated with sufficient light.
- determining a suitable oxygen partial pressure for example, measurement data as shown in FIG. 6 is used, and a suitable value of the oxygen flow rate introduced by the control unit 52 is determined based on the measurement data. .
- the substrate transfer mechanism 32 in the transfer chamber 31 is operated to transfer the substrate G from the loading chamber 21 to the transfer chamber 31.
- Light irradiation from the light irradiation mechanism 60 is started when the gate valve 45 is opened or before the gate valve 45 is opened. That is, the light irradiated from the light irradiation mechanism 60 is irradiated onto the surface of the substrate G on the transfer path where the substrate G is transferred from the loading chamber 21 to the transfer chamber 31 by the substrate transfer mechanism 32.
- the surface of the substrate G is irradiated with light uniformly.
- the cleaning conditions irradiation time / intensity of light irradiated to the substrate G from the light irradiation mechanism 60
- the control is performed under the condition that a sufficient cleaning effect can be obtained by controlling the substrate speed (substrate transport speed) during light irradiation and the intensity of light irradiated from the light irradiation mechanism 60 under the control of the control unit 52.
- the distance between the substrate G and the transmission window 50 is preferably as short as possible because it is preferable that the light passing through the transmission window 50 is sufficiently applied to the surface of the substrate G, and is, for example, about 20 mm. Even when the substrate G is transported, evacuation of the carry-in chamber 21 and introduction of oxygen gas into the carry-in chamber 21 are appropriately performed, and the oxygen partial pressure in the carry-in chamber 21 is maintained at the predetermined value (600 Pa or less). It is.
- the gate valve 45 is closed.
- a cleaning process is performed by uniformly irradiating light onto the surface of the substrate G from the light irradiation mechanism 60, and the transported chamber 31 is cleaned. G will be transported.
- the gate valve 46 is opened and the substrate transfer mechanism 32 is operated.
- the cleaned substrate G is transferred from the transfer chamber 31 to the film formation chamber 43.
- the substrate G transferred into the film forming chamber 43 is supported on the substrate support base 41.
- the film forming material is ejected from the six-series head 42 in a state where the substrate G is supported on the substrate support base 41, and simultaneously with the ejection, the substrate support base 41 supporting the substrate G extends along the substrate transport direction L. 1 is formed on the surface of the substrate G, and the light emitting layer 11 shown in FIG. 1 is formed on the substrate G.
- the cathode layer 12 is formed, the light emitting layer 11 is etched, and the sealing film layer 13 is formed, whereby the organic EL element A is manufactured. Is done.
- the cleaning of the substrate G before the formation of the light emitting layer 11 is performed at a predetermined time when the substrate G is transported from the carry-in chamber 21 to the transport chamber 31. Is performed by uniformly irradiating the substrate G with light of a predetermined wavelength (200 nm or less) from the light irradiation mechanism 60 under the above conditions (for example, conditions controlled by the control unit 52 such as an oxygen partial pressure of 600 Pa or less). Is called.
- the substrate G is efficiently cleaned in a short time without providing a cleaning chamber for cleaning in the substrate processing apparatus 1.
- the throughput of the entire substrate processing apparatus can be improved.
- a cleaning chamber (chamber) for cleaning is not required, so that space efficiency and cost reduction are realized.
- FIG. 7 is a schematic cross-sectional view of a substrate processing apparatus 70 according to the second embodiment of the present invention. Since the main configuration of the substrate processing apparatus 70 is the same as that of the substrate processing apparatus 1 according to the first embodiment, description of main components is omitted, and hereinafter, the first embodiment is described. Only parts different from the substrate processing apparatus 1 according to the above will be described.
- a transmission window 50 ′ is provided on the upper surface of the carry-in chamber 20 on the gate valve 45 side (side connected to the transfer chamber 30).
- a reflection mirror 74 is provided in the vicinity of the upper part of the transmission window 50 'so as to be separated from the transmission window 50'.
- the reflection mirror 74 is supported so as to be rotatable about a rotation center axis 75, and the mirror surface 74a of the reflection mirror 74 is directed in an arbitrary direction while facing the transmission window 50 '.
- a light irradiation mechanism 60 that irradiates the vacuum surface 74 a of the reflection mirror 74 with vacuum ultraviolet light is provided in the vicinity of the upper side of the transmission window 50 ′ and in the vicinity of the side of the reflection mirror 74. That is, the light irradiated from the light irradiation mechanism 60 is reflected by the mirror surface 74a of the reflection mirror 74, and the reflected light (light indicated by a one-dot chain line in FIG. 7) passes through the transmission window 50 ′, and the carry-in chamber 21 It is configured to be irradiated.
- the reflection mirror 74 is rotatably supported, the light irradiated from the light irradiation mechanism 60 to the reflection mirror 74 can be reflected and irradiated in all directions by rotating the reflection mirror 74. It is possible.
- the size of the transmission window 50 ′ is large enough to irradiate the entire upper surface of the substrate G supported by the uppermost stage of the support base 22 by rotating the reflection mirror 74. It is. That is, the size of the transmission window 50 ′ is the distance between the transmission window 50 ′ and the reflection mirror 74, and the upper surface (transmission window 50 ′) of the carry-in chamber 21 and the substrate G supported on the uppermost stage of the support base 22. What is necessary is just to set it as a suitable magnitude
- the substrate processing apparatus 70 When the substrate processing apparatus 70 according to the second embodiment of the present invention described above with reference to FIG. 7 performs the VUV cleaning process on the substrate G, the light irradiated to the reflection mirror 74 from the light irradiation mechanism 60 (Vacuum ultraviolet light) is reflected toward the transmission window 50 ′ on the mirror surface 74 a of the reflection mirror 74, and the reflected light is transmitted through the transmission window 50 ′ to irradiate the surface of the substrate G supported on the uppermost stage of the support base 22. As a result, the substrate is cleaned.
- the light irradiated to the reflection mirror 74 from the light irradiation mechanism 60 (Vacuum ultraviolet light) is reflected toward the transmission window 50 ′ on the mirror surface 74 a of the reflection mirror 74, and the reflected light is transmitted through the transmission window 50 ′ to irradiate the surface of the substrate G supported on the uppermost stage of the support base 22.
- the substrate is cleaned.
- the reflection mirror 74 is rotatable as described above, and the reflection light reflected by the reflection mirror 74 is rotated at a predetermined speed on the upper surface of the substrate G to be cleaned by rotating the reflection mirror 74 at a predetermined rotation speed. And the reflected light (vacuum ultraviolet light) can be uniformly irradiated on the entire upper surface.
- the substrate G is fixed to the support base 22 of the carry-in chamber 21 by scanning the reflected light obtained by reflecting the light from the light irradiation mechanism 60 on the reflection mirror 74 on the upper surface of the substrate G and performing a cleaning process.
- uniform VUV cleaning can be performed on the entire upper surface of the substrate G.
- the substrate G is efficiently cleaned in a short time without providing a cleaning chamber for cleaning in the substrate processing apparatus 70. Further, the throughput of the entire substrate processing apparatus can be improved.
- the cleaning is performed by irradiating light on the transfer path. Since the substrate G is fixed and cleaning is performed by scanning the upper surface of the substrate G with the irradiated light, the VUV cleaning can be completed only in the carry-in chamber 20 (the carry-in chamber 21), and the transfer of the substrate G (gate valve) Therefore, it is not necessary to adjust the pressure in the carry-in chamber 21 and the transfer chamber 31 in accordance with the opening 45), and the VUV cleaning can be performed efficiently, thereby improving the throughput of the entire apparatus. Further, in the present embodiment, it is not necessary to fix the light irradiation mechanism 60 to the upper portion of the carry-in chamber 20, so that maintenance such as lamp replacement in the light irradiation mechanism 60 can be performed very easily.
- FIG. 8 is a schematic cross-sectional view of a substrate processing apparatus 1 ′ in which a light irradiation mechanism 60 and a transmission window 50 according to a modification of the present invention are provided on the gate valve 45 side on the upper surface of the transfer chamber 30, and
- FIG. 9 is a substrate processing apparatus. It is a schematic plan view of 1 '.
- the configuration of the substrate processing apparatus 1 ′ shown in FIG. 8 and FIG. 9 is different from the configuration of the substrate processing apparatus 1 according to the first embodiment, except for the location where the light irradiation mechanism 60 and the transmission window 50 are provided. Absent. Therefore, description of the configuration of the substrate processing apparatus 1 ′ is omitted here. 8 and 9, the substrate processing apparatus 1 ′ provided with the light irradiation mechanism 60 having the same configuration as that of the first embodiment is illustrated. However, for example, as in the second embodiment. A light irradiation mechanism 60 having a configuration using a simple reflection mirror 74 may be provided on the upper surface of the transfer chamber 30 on the gate valve 45 side.
- the carry-in chamber 21 is evacuated and pressure-controlled, and the internal pressures of the carry-in chamber 21 and the transfer chamber 31 are the same.
- the pressure in the transfer chamber 31 is adjusted.
- the gate valve 45 is opened in a state where the oxygen partial pressure in the transfer chamber 31 is 600 Pa or less, more preferably about 300 Pa.
- the substrate G is transferred from the loading chamber 21 to the transfer chamber 31 by the operation of the substrate transfer mechanism 32 in the transfer chamber 31 simultaneously with the opening of the gate valve 45 or after the gate valve 45 is opened.
- Light irradiation from the light irradiation mechanism 60 is started when the gate valve 45 is opened or before the gate valve 45 is opened.
- the light irradiated from the light irradiation mechanism 60 is irradiated on the surface of the substrate G on the transfer path when the substrate G is transferred from the loading chamber 21 to the transfer chamber 31 by the substrate transfer mechanism 32.
- the surface of the substrate G is cleaned by irradiating the surface of the substrate G with light.
- the substrate processing apparatus 1 ′ is used to clean the substrate G before forming the light emitting layer 11 under a predetermined condition (for example, oxygen partial pressure of 600 Pa or less) when the substrate G is transferred from the loading chamber 21 to the transfer chamber 31. Since the irradiation is performed by irradiating the substrate G with light having a predetermined wavelength (200 nm or less) from the irradiation mechanism 60, the substrate G can be efficiently processed in a short time without providing a cleaning chamber in the substrate processing apparatus 1 ′. Cleaning is performed.
- a predetermined condition for example, oxygen partial pressure of 600 Pa or less
- the transmission window 50 has been described as having a linear shape extending in a direction orthogonal to the substrate transport direction L.
- the transmission window 50 is not necessarily limited to this shape. Absent. Therefore, in the following, a modified example of the transmission window 50 will be described with reference to FIGS. 10 and 11.
- FIG. 10 is an enlarged explanatory view of the transmission window 51 provided in the carry-in chamber 20 according to the modification of the present invention.
- FIG. 10 (a) is a sectional view of the transmission window 51
- FIG. FIG. 10A is a cross-sectional view of the transmission window 51 when viewed in the direction parallel to the substrate transport direction L (the X direction in FIG. 10B).
- the light irradiation mechanism 60 is not shown for the sake of explanation.
- the transmission window 51 includes a plurality of window portions 51a.
- the plurality of window portions 51a are spaced apart from each other in the substrate transport direction L, and are disposed so as to cover the width of the substrate in the direction orthogonal to the substrate transport direction L. That is, when the substrate G is transported along the substrate transport direction L so as to pass under the transmissive window 51, the light transmitted through the transmissive window 51 is irradiated on the entire surface of the substrate G.
- the transmission window 51 includes a plurality of (seven in this modification) window portions 51a, as in the case of using the linear transmission window 50 shown in the first embodiment.
- the light from the light irradiation mechanism 60 is uniformly irradiated on the surface of the substrate G.
- the substrate G can be efficiently cleaned in a short time without providing the cleaning chamber obtained in the first embodiment, and the throughput of the entire substrate processing apparatus can be improved.
- the operational effects such as being Further, since the transmission window 51 according to the present modification is composed of a plurality of window portions 51a separated from each other, for example, the strength of the transmission window 51, which is a quartz window, is improved as compared with a case where the transmission window 51 has a linear shape. There is.
- the strength of the transmission window 51 is improved, so that the strength of the entire carry-in chamber 20 is also improved.
- the transmission window 51 is composed of a relatively small window portion 51a, the transmission window 51 is superior in cost compared with the case where the transmission window 50 having a large linear shape is provided.
- FIG. 11 is explanatory drawing to which the permeation
- FIG.11 (a) is sectional drawing of the permeation
- FIG.11 (b) is permeation
- 3 is a plan view of a window 52.
- FIG. FIG. 11A is a cross-sectional view of the transmission window 52 when viewed in the direction parallel to the substrate transport direction L (the X direction in FIG. 11B). Further, in FIG. 11B as well as FIG. 10B, the light irradiation mechanism 60 is not shown for explanation.
- the transmission window 52 includes a plurality of window portions 52a.
- FIG. 11 shows an example in which the transmission window 52 includes seven window portions 52a.
- the plurality of window portions 52a are arranged in a line in a direction orthogonal to the substrate transport direction L.
- the window portion 52a has a rectangular shape, and the rectangular window portion 52a is provided in a state where the long side direction is inclined with respect to the substrate transport direction L by a predetermined angle. That is, the plurality of window portions 52a are provided so that the window portions 52a are positioned in parallel with all the window portions 52a being inclined in the same direction.
- the window portion 52a does not necessarily have a rectangular shape, and may be a shape that allows the substrate G to be uniformly irradiated with light, such as a slit shape.
- the plurality of window portions 52a are arranged so as to cover the width of the substrate G in the direction orthogonal to the substrate transport direction L as shown in FIG. That is, in FIG. 11B, the direction perpendicular to the substrate transport direction L is defined as the Y direction, the upper direction of the Y direction in the figure is + (Y + direction), and the lower direction in the figure is ⁇ (Y ⁇ direction).
- the Y + side end portion of the window portion 52a located in the Y-direction and the Y-side end portion of the window portion 52a located in the Y + side direction are It is the structure which is not separated at least in the direction. More specifically, among the seven window portions 52a in FIG.
- the lowest point P of the third window portion 52a from the top and the uppermost point of the fourth window portion 52a from the top When viewed from the X direction, the point Q has a relationship in which the point Q is positioned in the Y + direction from the point P (or the point P and the point Q overlap). Note that all of the seven window portions 52a adjacent to each other satisfy the relationship described above.
- the window portion 52a is configured as described above, when the substrate G is transported along the substrate transport direction L so as to pass under the transmission window 52, the width direction of the substrate G with respect to the substrate G is determined.
- the light irradiation mechanism 60 irradiates light uniformly.
- the substrate G can be efficiently cleaned in a short time without providing the cleaning chamber obtained in the first embodiment, and the throughput of the entire substrate processing apparatus can be improved.
- the operational effects such as being Further, similarly to the above modification, the strength of the transmission window 52 has an advantage that it is improved as compared with the case where the transmission window has a linear shape (transmission window 50).
- the window portions 52a are inclined by a predetermined angle and arranged in a line in a direction orthogonal to the substrate transport direction L, so that the arrangement and configuration of the window portions are compared with the modification shown in FIG. Can be simplified, and efficiency can be improved in terms of apparatus cost and apparatus maintenance.
- the transmission window 50 is described as being a typical quartz window, for example.
- the transmission window 50 is irradiated from the light irradiation mechanism 60 as a transmission window (or a window portion constituting the transmission window).
- a lens or the like that can collect the collected light in the same direction as the substrate transport direction L on the surface of the substrate G.
- FIG. 12 is a cross-sectional view of the transmission window 53 using a lens as viewed from a direction orthogonal to the substrate transport direction L.
- the transmission window 53 is assumed to have a linear shape extending in a direction orthogonal to the substrate transport direction L, and the light (dashed line) irradiated to the substrate G and the substrate G is illustrated for explanation. Show.
- the light irradiated from the light irradiation mechanism 60 is condensed in the same direction as the substrate transport direction L (see the broken line in the figure).
- the light is collected on the substrate G only in the same direction as the substrate transport direction L, the light is uniformly irradiated on the substrate G in the direction orthogonal to the substrate transport direction L.
- the transmission window 53 configured by the lens shown in FIG. 12 When the transmission window 53 configured by the lens shown in FIG. 12 is used, the light irradiated from the light irradiation mechanism 60 is condensed on the substrate G as described above, and thus, for example, a xenon excimer lamp lamp is used. Even when the light irradiation amount of a certain light irradiation mechanism 60 is small, a sufficient light irradiation amount for cleaning the substrate G is ensured.
- the light irradiation mechanism 60 has a Even if the light irradiation amount is the same, when the transmission window 53 is used, the light is collected and irradiated onto the substrate G, so that the transport speed of the substrate G can be increased. Thereby, the substrate G is efficiently cleaned in a short time, and the throughput of the entire substrate processing apparatus is improved.
- the light irradiation mechanism 60 scans (passes) the substrate G while moving (carrying) the substrate G under the light irradiation mechanism 60 in a state where light is irradiated.
- the surface of the substrate G is irradiated with light uniformly, but the substrate G is fixed to the support table 22 by making the light irradiation mechanism 60 movable along the substrate transport direction L on the upper surface of the loading chamber 20.
- FIG. 13 is an explanatory diagram when the light irradiation mechanism 60 is a movable light irradiation mechanism 60 ′ in the substrate processing apparatus 1.
- the transmission window 50 is provided on the entire upper surface of the carry-in chamber 21 so as to cover the substrate G fixed in the carry-in chamber 21.
- the light irradiation mechanism 60 moves in the direction opposite to the substrate transport direction L (left direction in FIG. 13) from the vicinity of the gate valve 45 to the vicinity of the gate valve 47 in a state where light is irradiated.
- the entire surface of the substrate G is irradiated with light.
- the light irradiation mechanism 60 ′ is movable, it is necessary to provide a large transmission window 50 on the entire upper surface of the carry-in chamber 21 as compared with the first embodiment. Therefore, there are disadvantages in terms of device strength and cost.
- the substrate G can be cleaned while the gate valve 45 is closed, it is only necessary to adjust the internal pressure of the carry-in chamber 21 at the time of cleaning. Since a step of opening the valve 45 is not required, the throughput can be improved.
- the movable light irradiation mechanism 60 ′ may be provided on the upper surface of the transfer chamber 30.
- a single loading chamber 21 is provided inside the loading chamber 20, and a light irradiation mechanism 60 is provided outside the loading chamber 20.
- the present invention is not limited to this.
- the irradiation chamber 21a and the loading chamber 21b may be provided in the carry-in chamber 20, and the light irradiation mechanism 60 may be disposed in the irradiation chamber 21a.
- the irradiation chamber 21a and the loading chamber 21b are provided in the loading chamber 20 will be described with reference to the drawings.
- FIG. 14 is a schematic sectional view of a substrate processing apparatus 80 according to a further modification of the present invention.
- the main configuration of the substrate processing apparatus 80 is the same as that of the substrate processing apparatus 1 according to the first and second embodiments except for the internal structure of the carry-in chamber 20. The description is omitted, and only the parts different from the substrate processing apparatus according to the first and second embodiments will be described below.
- the internal space is divided into an irradiation chamber (upper space) 21a and a carry-in chamber (lower space) 21b by a quartz plate 84 provided substantially horizontally.
- the irradiation chamber 21a and the carry-in chamber 21b are provided with exhaust ports 24a and 24b, respectively, and the exhaust ports 24a and 24b communicate with a vacuum pump (not shown). That is, the irradiation chamber 21a and the carry-in chamber 21b are configured such that the internal pressures can be controlled independently.
- a plurality of light irradiation mechanisms 60 for irradiating light downward are installed on the inner upper surface of the irradiation chamber 21a.
- the light irradiated from the light irradiation mechanism 60 passes through the quartz plate 84 and is irradiated to the carry-in chamber 21b. That is, the light transmitted through the quartz plate 84 is irradiated on the upper surface of the substrate G supported on the uppermost stage of the support base 22 in the carry-in chamber 21b.
- FIG. 14 shows the case where the light irradiation mechanisms 60 are installed at three locations.
- the number of light irradiation mechanisms 60 and the installation locations (location distribution) are determined by the light transmitted through the quartz plate 84 being the substrate. What is necessary is just to set it as the suitable installation number and installation location so that light may be uniformly irradiated to the whole upper surface of the board
- the carry-in chamber 20 configured to be divided into the irradiation chamber 21a and the carry-in chamber 21b shown in FIG. 14, it is required to reduce the internal pressure difference between the irradiation chamber 21a and the carry-in chamber 21b.
- the quartz plate 84 that divides the internal space of the carry-in chamber 20 needs to be provided over the entire horizontal direction of the internal space, and therefore there is a large differential pressure between the irradiation chamber 21a and the carry-in chamber 21b. This is because there is a risk of damage.
- the irradiation chamber 21a and the carry-in chamber 21b are provided with the exhaust ports 24a and 24b, respectively. Therefore, the irradiation chamber 21a and the carry-in chamber are suitably controlled by controlling the vacuum pump connected to the exhaust ports 24a and 24b.
- the differential pressure with respect to 21b can be made extremely small.
- uniform light irradiation is performed on the upper surface of the substrate G supported on the uppermost stage of the support base 22 from the plurality of light irradiation mechanisms 60 that are suitably arranged as described above, and the substrate is cleaned.
- uniform VUV cleaning is performed on the entire upper surface of the substrate G in a state where the substrate G is fixed to the support base 22, whereby, as in the case of the first embodiment, the substrate is The substrate G is efficiently cleaned in a short time without providing a cleaning chamber for cleaning in the processing apparatus. Further, the throughput of the entire substrate processing apparatus can be improved.
- VUV cleaning can be completed only in the carry-in chamber 20, and it is not necessary to adjust the pressure in the carry-in chamber 20 and the carry chamber 30 accompanying the transfer of the substrate G (opening of the gate valve 45). VUV cleaning can be performed, and the throughput of the entire apparatus can be improved.
- the carry-in chamber 20 is described as being divided into the irradiation chamber 21 a and the carry-in chamber 21 b by the quartz plate 84, but the transfer chamber 30 is divided into two spaces by the quartz plate.
- VUV cleaning may be performed only inside the transfer chamber 30.
- FIG. 15 is a graph showing the electric field intensity (MV / m) -current density (mA / cm 2 ) characteristics of a substrate that has been baked and VUV cleaned and an untreated substrate. It is. As shown in FIG. 15, when comparing the electric field-current density characteristics of the untreated substrate and the substrate subjected to baking / VUV cleaning, the electric field of the substrate subjected to baking / VUV cleaning is lower than that of the untreated substrate. It can be seen that the current density is high underneath (the load voltage to the substrate is low).
- FIG. 16 is a graph showing the electric field [MV / m] -current density [mA / cm 2 ] characteristics of the substrate subjected to the baking treatment / VUV cleaning and the substrate subjected only to the baking treatment.
- the substrate subjected to the baking processing / VUV cleaning is more suitable for the substrate subjected only to the baking processing. It can be seen that the current density is high under a low electric field (with a low load voltage on the substrate). Accordingly, it was found that the hole injection efficiency was improved in the substrate subjected to the baking process and the VUV cleaning process as compared with the substrate subjected only to the baking process.
- the present invention is applied to, for example, a substrate processing apparatus and a substrate processing method for forming an organic electroluminescence element.
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Abstract
Description
10…アノード層
11…発光層
12…カソード層
13…封止膜層
20…搬入チャンバー
21…搬入室
21a…照射室
21b…搬入室
22…支持台
24、24a、24b…排気口
25…O2導入口
26…N2導入口
30…搬送チャンバー
31…搬送室
34…排気口
35…O2導入口
36…N2導入口
40…成膜チャンバー
41…基板支持台
42…ヘッド
43…成膜室
44…排気口
45、46、47…ゲートバルブ
50、50’、51、52、53…透過窓
51a、52a…窓部分
60、60’…光照射機構
74…反射ミラー
74a…鏡面
75…回転中心軸
84…石英板
A…有機EL素子
G…基板
図1は、本発明の第1の実施の形態にかかる基板処理装置1を含む種々の装置によって製造される有機EL素子Aの製造工程の説明図である。図1(a)に示すように、上面にアノード(陽極)層10が成膜された基板Gが用意される。基板Gは、例えばガラス等よりなる透明な材料からなる。また、アノード層10は、ITO(Indium Tin Oxide)等の透明な導電性材料よりなる。なお、アノード層10は、例えばスパッタリング法などにより基板Gの上面に形成される。
以下には、本発明の第2の実施の形態にかかる基板処理装置70について図面を参照して説明する。なお、上記第1の実施の形態と同一の機能を有する構成要素については同一の符号を付し、その説明は省略する。
Claims (7)
- 基板搬入用の搬入室と、基板に成膜処理を行う成膜室と、前記搬入室と前記成膜室との間で基板を搬送させる基板搬送機構を有する搬送室とを備える基板処理装置であって、
前記搬入室と前記搬送室は隣接した状態で接続され、
前記搬入室または前記搬送室のいずれか一方の外部には、基板の搬送経路上に光を照射する光照射機構と、前記光照射機構から照射される光の照射量および照射強度を制御する制御部が設けられ、
前記光照射機構が設けられた前記搬入室または前記搬送室には前記光照射機構から照射された光を透過させる透過窓が設けられ、
前記光照射機構から基板に照射される光は基板に対して相対的に移動しながら照射される、基板処理装置。 - 前記搬入室と前記搬送室との間での基板の搬送時に基板に対して前記光照射機構から光が照射される、請求項1に記載の基板処理装置。
- 前記光照射機構は波長172nm以下の波長の光を照射する、請求項1に記載の基板処理装置。
- 前記光照射機構から基板への光の照射は酸素分圧600Pa以下の雰囲気下で行われる、請求項1に記載の基板処理装置。
- 前記透過窓は基板搬送方向と直交する方向に伸長する直線形状である、請求項1に記載の基板処理装置。
- 前記透過窓は複数の窓部分から構成され、隣接する前記窓部分は、基板搬送方向に互いに離隔して配置され、基板搬送方向と直交する方向には基板を網羅するように配置される、請求項1に記載の基板処理装置。
- 基板を洗浄する洗浄工程と基板に成膜を行う成膜工程からなる基板処理方法であって、
前記洗浄工程は、酸素分圧600Pa以下の雰囲気下で基板に対して波長172nm以下の光を照射する工程である、基板処理方法。
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JP2008166168A (ja) * | 2006-12-28 | 2008-07-17 | Canon Inc | 有機elディスプレイとその製造法 |
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JP2009146959A (ja) * | 2007-12-12 | 2009-07-02 | Canon Inc | 露光装置及び洗浄装置 |
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- 2011-07-26 KR KR1020137004029A patent/KR20130041950A/ko not_active Application Discontinuation
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JPS5858726A (ja) * | 1981-10-05 | 1983-04-07 | Hitachi Ltd | 半導体処理装置 |
JPH09270404A (ja) * | 1996-03-31 | 1997-10-14 | Furontetsuku:Kk | 基体の処理方法 |
JP2001028296A (ja) * | 1999-07-14 | 2001-01-30 | Nec Corp | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2001104776A (ja) * | 1999-10-06 | 2001-04-17 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2003218082A (ja) * | 2002-01-23 | 2003-07-31 | Tokyo Electron Ltd | 基板処理方法および装置、半導体装置の製造装置 |
JP2006185869A (ja) * | 2004-12-28 | 2006-07-13 | Asahi Glass Co Ltd | 有機電界発光素子及びその製造方法 |
JP2007042315A (ja) * | 2005-08-01 | 2007-02-15 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子の製造方法及び有機エレクトロルミネッセンス素子 |
JP2008166168A (ja) * | 2006-12-28 | 2008-07-17 | Canon Inc | 有機elディスプレイとその製造法 |
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