WO2012010650A1 - Kupfer(i)-komplexe für opto-elektronische vorrichtungen - Google Patents
Kupfer(i)-komplexe für opto-elektronische vorrichtungen Download PDFInfo
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- WO2012010650A1 WO2012010650A1 PCT/EP2011/062491 EP2011062491W WO2012010650A1 WO 2012010650 A1 WO2012010650 A1 WO 2012010650A1 EP 2011062491 W EP2011062491 W EP 2011062491W WO 2012010650 A1 WO2012010650 A1 WO 2012010650A1
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- 0 *c1c[s]c(*)c1* Chemical compound *c1c[s]c(*)c1* 0.000 description 4
- QETVYAYOHGODSU-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1-c1nnc(-c(cc2)ccc2-c2cc(C)nc3c4nc(C)cc(-c(cc5)ccc5-c5nnc(-c6ccc(C(C)(C)C)cc6)[n]5C5=CCCC=C5)c4ccc23)[n]1-c1ccccc1 Chemical compound CC(C)(C)c(cc1)ccc1-c1nnc(-c(cc2)ccc2-c2cc(C)nc3c4nc(C)cc(-c(cc5)ccc5-c5nnc(-c6ccc(C(C)(C)C)cc6)[n]5C5=CCCC=C5)c4ccc23)[n]1-c1ccccc1 QETVYAYOHGODSU-UHFFFAOYSA-N 0.000 description 1
- AMYUXZKXDOAWGT-SDXDJHTJSA-N CN/N=C(/c1ccc(B(O)O)cc1)\N(C)c1ccccc1 Chemical compound CN/N=C(/c1ccc(B(O)O)cc1)\N(C)c1ccccc1 AMYUXZKXDOAWGT-SDXDJHTJSA-N 0.000 description 1
- HWGJIWHQIQAVFM-UHFFFAOYSA-N Cc(cc(c1ccc23)Br)nc1c2nc(C)cc3Br Chemical compound Cc(cc(c1ccc23)Br)nc1c2nc(C)cc3Br HWGJIWHQIQAVFM-UHFFFAOYSA-N 0.000 description 1
- FHRLOZBVLYVZGW-UHFFFAOYSA-N c1c[n]([B](c2ccccc2)(c2ccccc2)[n]2nccc2)nc1 Chemical compound c1c[n]([B](c2ccccc2)(c2ccccc2)[n]2nccc2)nc1 FHRLOZBVLYVZGW-UHFFFAOYSA-N 0.000 description 1
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Definitions
- the present invention relates to the use of soluble copper (I) complex (Cu (I) complexes) as emitters in OLEDs (organic light emitting diodes) and in other optoelectronic arrangements.
- This new technology is based on the principle of OLEDs, Organic Light Emitting Diodes.
- the use of special metal-organic materials (molecules) many new optoelectronic applications, eg. As in the field of organic solar cell, organic field effect transistors, organic photodiodes, etc. from.
- OLEDs consist predominantly of organic layers, which are also flexible and inexpensive to manufacture.
- OLED components can be designed over a large area as lighting fixtures, but also as small pixels for displays.
- LCDs liquid crystal displays
- CRTs cathode ray tubes
- OLEDs have numerous advantages, such as a low operating voltage of a few volts, a thin structure of a few hundred nm, highly efficient self-luminous Pixels, a high contrast and a good resolution as well as the possibility to display all colors.
- an OLED light is generated directly when applying electrical voltage, instead of only modulating it.
- FIG. 1 shows a basic structure of an OLED. Due to the applied external voltage on a transparent indium-tin-oxide anode (ITO) and a thin metal cathode are injected by the anode positive holes and the cathode negative electrons. These differently charged charge carriers enter the emission layer via intermediate layers, which may also include here not drawn hole or electron blocking layers. There, the oppositely charged charge carriers meet at or near doped emitter molecules and recombine. As a rule, the emitter molecules are embedded in matrix molecules or polymer matrices (in, for example, 2 to 10% by weight), the matrix materials being selected such that they also facilitate hole and electron transport.
- ITO indium-tin-oxide anode
- a thin metal cathode are injected by the anode positive holes and the cathode negative electrons.
- These differently charged charge carriers enter the emission layer via intermediate layers, which may also include here not drawn hole or electron blocking layers.
- the oppositely charged charge carriers meet at or near doped emitter molecules
- This electroluminescent compound can then go into a specific electronic excited state, which is then converted as completely as possible and largely avoiding radiation-free deactivation processes by emitting light in the associated ground state.
- an electronic excited state which can also be formed by energy transfer from a suitable precursor exciton, comes, with a few exceptions, either a singlet or a triplet state, consisting of three sub-states into consideration. Since both states are usually occupied in a ratio of 1: 3 due to the spin statistics, it follows that for an emission from the singlet state, which is referred to as fluorescence, only a maximum of 25% of the excitons produced lead to emission again.
- triplet emission which is referred to as phosphorescence
- all excitons are exploited, converted and emitted as light (triplet harvesting), so that in this case the internal quantum efficiency can reach the value of 100%, if the excited with and energetically over the triplet state singlet state completely relaxed in the triplet state (inter-system crossing, ISC) and radiationless competition processes remain meaningless.
- ISC inter-system crossing
- the triplet emitters suitable for triplet harvesting typically employ transition metal complex compounds in which the metal is selected from the third period of the transition metals. These are predominantly very expensive precious metals such as iridium, platinum or gold. (See also H. Yersin, Top. Curr. Chem. 2004, 241, 1 and MA Baldo, DF O'Brien, ME Thompson, SR Forrest, Phys. Rev. B 1999, 60, 14422).
- the main reason for this is the high spin-orbit coupling (SBK) of the noble metal central ions (SBK constant Ir (III): “4000 cm “1 ; Pt (II): “4500 cm “1 ; Au (I) ..
- the object of the invention is achieved by the Cu (I) compounds described here. That is, the invention involves the creation and provision of new Cu (I) compounds that exhibit the following combination of properties:
- Alkanes also halogenated alkanes such as pentane, hexane, heptane, including branched alkanes,
- Aromatic hydrocarbons whether or not halogenated: benzene, toluene, chlorobenzene, 1,2-dichlorobenzene
- the copper (I) complex is particularly soluble in particular in at least one of the following solvents: polar hydrocarbons such as. For example, dichloromethane, chloroform, 1,2-dichloroethane, 1,1,1-trichloroethane, perchlorethylene, toluene, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran, diethyl ether, acetone, Methyl ethyl ketone, nitromethane, dimethylsulfoxide, dimethylformamide, methanol and ethanol.
- polar hydrocarbons such as. For example, dichloromethane, chloroform, 1,2-dichloroethane, 1,1,1-trichloroethane, perchlorethylene, toluene, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran, diethyl ether, acetone, Methyl ethyl ketone
- Fig. 2a is an energy level scheme for transition metal complexes with small or little impact spin-bonding coupling (eg metal complexes of the first period of the transition metals or metal complexes with ligand-centered triplet states ) shown schematically. Based on this scheme, the photophysical electroluminescence properties of these molecules will be explained.
- the hole-electron recombination leads to a statistical average of 25% for the occupation of the singlet state (1 singlet path) and 75% for the occupation of AEi (Si-Ti) deeper lying triplet state (3 triplet paths).
- the Si-state excitation relaxes into the Ti state as a result of the inter-system crossing (ISC) process, which typically occurs faster than in 10 " 12 s when the transition between metal-organic complexes occurs of the triplet state is very long for these metal complexes of the first period of the transition metals (eg 100 ⁇ 8 to 1000 ⁇ 8 or longer). Emitters with such long decay times are hardly suitable for OLED applications.
- ISC inter-system crossing
- the disadvantage of the above-described prior art can be avoided by choosing Cu (I) complexes which have an AE 2 (Si-Ti) value between the lowest excited singlet (SO 2 and the underlying triplet (Ti) have state of less than 2500 cm '1.
- This is illustrated by the example shown in Fig. 2b energy level diagram for Cu (I) complexes.
- This energy difference is small enough to provide a thermal back occupation of the Si-state from the Ti-state in accordance with a Boltzmann distribution and of the thermal energy k T ß allow. in order to have a thermally activated light emission from the Si state.
- This process proceeds in accordance with equation (1)
- AE Si-Ti
- AE 2 Si-T0 according to FIG. 2b.
- x (Si) is the fluorescence lifetime with no reoccupation
- x av is the emission lifetime determined when the reoccurrence channel is opened by the two states Ti and Si (see Fig. 2b). The other sizes have been defined above.
- Equation (2) should again be explained by a numerical example.
- AE (Si - Ti) 800 cm “1 and a decay of the fluorescent Si state of 50 ns, the emission decay time (of the two states) of x av ⁇ 2 ⁇ 8 is shorter Most very good Ir (III) or Pt (II) triplet emitters.
- the Cu (I) complexes according to the invention having the properties described above, ie having a small singlet-triplet energy difference AE (Si-Ti), are preferably to be described by the general formula A given below.
- the electronic transitions that control the optical behavior of these Cu (I) complexes show a pronounced metal-to-ligand charge-transfer character. With this transition type is a relatively small value of the - known in the art - quantum mechanical exchange integral connected. This then results in the desired small energy difference AE (Si-Ti).
- the invention relates to a method for selecting Cu (I) complexes whose AE (Si-Ti) value lies between the lowest excited singlet (SO) and the underlying triplet state (TO less than 2500 cm ). 1 , preferably less than 1500 cm “1 , more preferably less than 1000 cm “ 1 , very particularly preferably less than 500 cm "1 is.
- AE Si -TO value
- the energy difference AE (Si-Ti), in particular the complexes described by the formula A, can be described approximately quantum mechanically by the so-called exchange integral multiplied by the factor 2. Its value depends directly on the expressiveness of the so-called charge-transfer character involving the metal d orbitals and the ligand 7T * orbitals. That is, an electronic transition between the different orbitals represents a metal to ligand charge transfer (CT) transition. The smaller the overlap of the molecular orbitals described above, the more pronounced is the electronic charge transfer character. This is then associated with a decrease in the exchange integral and thus a decrease in the energy difference AE (Si-Ti).
- the energy differences according to the invention can be achieved with AE (Si-Ti) less than 2500 cm -1 or less than 1500 cm -1 or less than 1000 cm -1 even less than 500 cm -1 .
- the respective transitions are easily identified, since the triplet band is at lower energy than the singlet band and gains in intensity with decreasing temperature.
- the measurements are carried out in oxygen-free dilute solutions (about 10 -2 mol L-1) or on thin films of the corresponding molecules or on films doped with the corresponding molecules. If a solution is used as the sample, it is advisable to use a solvent or solvent mixture which forms glasses at low temperatures, such as 2-methyltetrahydrofuran, butyronitrile, toluene, ethanol or aliphatic hydrocarbons. If a film is used as a sample, the use of a matrix with a significantly higher singlet and triplet energy than that of the Cu (I) complexes (emitter molecules), eg. B. PMMA (polymethylmethacrylate). This film can be applied from solution.
- the line slope is -AE (Si-Ti) / k B.
- a simple, approximate estimation of the AE (Si-Ti) value can also be carried out by recording the fluorescence and phosphorescence spectra at low temperature (eg 77 K or 4.2 K using a cryostat).
- the AE (Si-Ti) value then corresponds approximately to the energy difference between the high-energy rising edges of the fluorescence or phosphorescence band.
- Another method of determining the AE (Si-Ti) value is by measuring the emission decay times with a commercial meter.
- the emission life T av as a function of temperature using a cryostat for the range between 4.2 K or z. B. 20 K and 300 K measured.
- this quenching mechanism is prevented by the presence of sterically demanding substituents on the diimine ligand NnN (in particular in positions 2 and 9 of 1,10-phenanthroline or in positions 3 and 3 'of 2,2'-bipyridine) or greatly reduced by preventing the geometry changes around the Cu atom.
- substituents on the diimine ligand NnN in particular in positions 2 and 9 of 1,10-phenanthroline or in positions 3 and 3 'of 2,2'-bipyridine
- substitutions contribute to the protection of the Cu center from unwanted chemical reactions with nucleophilic substances (solvents, impurities, easily coordinating matrix materials).
- the alkyl and aryl radicals may also be substituted (for example with halogens, alkoxy or silane groups, etc.) or lead to fused ring systems (see Example 2).
- the emitter A to be protected should include the following features:
- LnL is a singly negatively charged bidentate ligand.
- the ligand NnN is a substituted diimine ligand, in particular substituted 2,2'-bipyridine derivatives (bpy) or 1,10-phenanthroline derivatives (phen).
- R is a sterically demanding substituent in the 3,3'-position (bpy) or 2,9-position (phen), which prevents a geometry change in the direction of planarization of the complex in the excited state.
- the alkyl and aryl radicals may also be substituted (eg with halogens, alkoxy or silane groups, etc.) or lead to fused ring systems.
- two radicals A are shown in formula A, in one embodiment of the invention a complex according to the invention may also have only one radical R.
- FG functional group is another substituent that introduces an additional function into the complex that would otherwise not be present.
- the functional groups FG are attached either directly or via suitable bridges (see below) to the diimine substituents.
- It can either be a group with properties of an electron conductor.
- It may be a group having properties of a hole conductor.
- It can be a group that determines the solubility of the complex.
- the diimine ligand is preferably either a substituted 2,2'-bipyridine or a substituted 1,10-phenanthroline ligand.
- the syntheses of different, substituted bpy and phen ligands have already been discussed several times in scientific papers (G. Chelucci, RP Thummel, Chem. Rev. 2002, 102, 3129, C. Kaes, A. Katz, MW Hosseini, Chem 2000, 100, 3553, M. Schstoff, H. Ammon, Eur. J. Inorg. Chem. 1998, 785. M. Heller, US Schubert J. Org. Chem. 2002, 67, 8269.) and are therefore assigned to Specialist known. Substituted 2,2'-bipyridine ligands
- the diimine ligand is substituted with a function group FG and the connection of the functional groups listed below takes place at the position marked "#” (see below).
- the bond between the functional group and the diimine ligand can take place directly at the positions marked with "#” to form direct C FG -C NN bonds, where C NN represents the C atom of the diimine ligand, which is labeled "#".
- C FG is the C atom of the functional group labeled "#.” If the atom denoted by "#" is a nitrogen atom, then N FG -C NN bonds result, with N FG for the "#"
- the functional group can be bridged to the diimine ligand, for example, ether, thioether, ester, amide, methylene, silane, ethylene, ethyne bridges
- the following functions can be used as bridges: C F G0 CNN, C F GS-CNN, -C F GC (0) -0-CNN, CFG-C (0) -NH-CNN, CFG- CH 2 -CNN, CFG-SIR ' 2 -CNN,
- the ligand described in the literature (4,4'-bis (5- (hexylthio) -2,2'-bithien-5'-yl) -2,2'-bipyridines) illustrates the possibility of attachment of an electron-conducting substituent a bpy ligand by means of a Stille coupling (C.Y. Chen, M. Wang, J.Y. Li, N. Pootrakulchote, L. Facebookei, C.-h. Ngoc-le, J.-D. Decoppet, J.-H. Tsai, C. Grätzel, C.G. Wu, SM Zakeeruddin, M. Grätzel, ACS Nano 2009, 3, 3103).
- the radical R 1 can also be an electron-conducting, hole-conducting or solubility-increasing substituent. This leads to the following diimine ligands:
- the methods for linking the functional group to the diimine ligands, either directly or via a bridge are known to those skilled in the art.
- Examples 1 to 9 exemplify the possibilities for synthesizing the substituted phen ligands.
- the radical R 1 can also be an electron-conducting, hole-conducting or solubility-increasing substituent. This leads to the following diimine ligands:
- the diimine ligand may also be selected from the following molecules:
- Substituents # are defined as above (bpy and phen ligands).
- the simply negatively charged ligand LnL may be one of the molecules shown below:
- the functional groups (FG) can either be single or multiple bound to the NnN ligand. Identical or different functional groups can be used. The functional groups may also be symmetrical or asymmetrical. For synthetic reasons, a two-fold substitution of identical functional groups is usually advantageous.
- Nonpolar functional groups FG increase the solubility in non-polar solvents and lower the solubility in polar solvents.
- Nonpolar groups are z.
- B. alkyl groups [CH 3 - (CH 2 ) n -] (n 1 - 30), also branched, substituted alkyl groups, eg. B. with halogens.
- partially or perfluorinated alkyl groups and perfluorinated oligo- and polyether, z. For example, [- (CF 2 ) 2 -O] n - and (-CF 2 -O) n - (n 2 - 500).
- Polar functional groups increase the solubility in polar media. These can be:
- Amines -NH 2 , -NR 2 , -N (CH 2 CH 2 OH) 2 ,
- Negatively charged substituents eg. B. borates - (BR 3), aluminates - (A1R 3) ⁇ (as an anion may be an alkali metal or ammonium ion) act.
- the invention relates to a method for producing an opto-electronic device, in particular wherein the preparation is carried out wet-chemically and the method comprises the following steps:
- the method may further comprise the step of: applying a third emitter complex dissolved in the first solvent or in a third solvent to the support, wherein the third copper (I) complex is a copper (I) according to the invention complex.
- the optoelectronic device is a white light OLED, wherein the first emitter complex is a red light emitter, the second emitter complex is a green light emitter, and the third emitter complex is a blue light emitter.
- FIG. 1 Basic structure of an OLED. The illustration is not drawn to scale.
- FIG. 2 Explanations of the electro-luminescence behavior a for transition metal complexes with small or only slightly affecting spin-bonding coupling (eg metal complexes of the first period of the transition metals) and b for Cu selected according to the invention (I) complexes.
- the value given in a for ⁇ ( ⁇ ) represents an example.
- Phen3 The phenanthroline dichloride Phen3 is prepared again according to (M. Schsch, H. Ammon Eur. J. Org. Chem. 1998, 785.). The synthesis of Phen4 is analogous to Phen2.
- 1,10-phenanthroline ligands that increase the solubility in polar solvents, especially water
- the Diether Phen10a and the monoether Phen10b are shown analogously to the literature (B. Koning, JW de Boer, A. Meetsma, RM Kellogg, ARKIVOC 2004, 189).
- the isolation is carried out by column chromatography.
- the brominated 1,2,4-triazole is prepared according to (XJ Feng, PL Wu, HL Tam, KF Li, MS Wong, KW Cheah, Chem. Eur. J. 2009, 15, 11681).
- n-BuLi and B (OMe) 3 By reaction with n-BuLi and B (OMe) 3 and subsequent hydrolysis with dilute HCl, the boronic acid is synthesized.
- the boronic acid is finally reacted analogously to Example 7 to the ligand Phenl4.
- Crystallization from a dichloromethane / toluene mixture yields crystals of Cu (dmphene) (m ' ⁇ io-CB (PPh2) 2) x CH2Cl2 suitable for X-ray diffraction analysis.
- FIG. 3 an ORTEP image of a Cu (dophene) (m ' ⁇ io-CB (PPh2) 2) molecule is shown. Its luminescence properties, measured on a solid sample at room temperature, are shown in FIG.
- Cu (dbphen) (nz ' ⁇ io-CB (PPh2) 2) is crystallized from a mixture of dichloromethane and toluene.
- Figure 6 shows an ORTEP image of a Cu (dbphen) ( ' iio-CB (PPh 2 ) 2 ) molecule.
- the drawn curve represents a fit function according to equation (4).
- the resulting fit values for x (Si) and AE (Si-Ti) are plotted in FIG. Further examples
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11746501.3A EP2595997B1 (de) | 2010-07-20 | 2011-07-20 | Kupfer(i)-komplexe für opto-elektronische vorrichtungen |
| US13/810,848 US9024026B2 (en) | 2010-07-20 | 2011-07-20 | Copper (I) complexes for optoelectronic devices |
| JP2013520152A JP2013539455A (ja) | 2010-07-20 | 2011-07-20 | 光電子デバイスのための可溶性銅(i)錯体による一重項捕獲 |
| KR20137001396A KR20140010359A (ko) | 2010-07-20 | 2011-07-20 | 광전자 디바이스를 위한 구리(i) 복합물 |
| CN2011800355234A CN103052644A (zh) | 2010-07-20 | 2011-07-20 | 用于光电器件的铜(i)配合物 |
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| DE201010031831 DE102010031831A1 (de) | 2010-07-20 | 2010-07-20 | Singulett-Harvesting mit löslichen Kupfer(I)-Komplexen für opto-elektronische Vorrichtungen |
| DE102010031831.0 | 2010-07-20 |
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| PCT/EP2011/062491 Ceased WO2012010650A1 (de) | 2010-07-20 | 2011-07-20 | Kupfer(i)-komplexe für opto-elektronische vorrichtungen |
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| EP (1) | EP2595997B1 (enExample) |
| JP (1) | JP2013539455A (enExample) |
| KR (1) | KR20140010359A (enExample) |
| CN (1) | CN103052644A (enExample) |
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| WO2013117460A3 (de) * | 2012-02-09 | 2013-12-19 | Hartmut Yersin | Optische sauerstoff-sensoren mit kupfer(i)-komplexen |
| WO2014184316A1 (de) * | 2013-05-16 | 2014-11-20 | Cynora Gmbh | Kupfer(i)- und silber(i)-komplexe als leuchtstoffe in energiespar- und leuchtstofflampen |
| JP2014227408A (ja) * | 2013-05-27 | 2014-12-08 | 公立大学法人大阪市立大学 | 銅錯体化合物、銅錯体化合物の製造方法、医療診断用蛍光色素、太陽電池、並びに、発光素子 |
| US20150155500A1 (en) * | 2011-12-22 | 2015-06-04 | Cynora Gmbh | Organic molecules for oleds and other optoelectronic devices |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150155500A1 (en) * | 2011-12-22 | 2015-06-04 | Cynora Gmbh | Organic molecules for oleds and other optoelectronic devices |
| US10312456B2 (en) * | 2011-12-22 | 2019-06-04 | Cynora Gmbh | Organic molecules for OLEDs and other optoelectronic devices |
| WO2013117460A3 (de) * | 2012-02-09 | 2013-12-19 | Hartmut Yersin | Optische sauerstoff-sensoren mit kupfer(i)-komplexen |
| WO2014184316A1 (de) * | 2013-05-16 | 2014-11-20 | Cynora Gmbh | Kupfer(i)- und silber(i)-komplexe als leuchtstoffe in energiespar- und leuchtstofflampen |
| JP2014227408A (ja) * | 2013-05-27 | 2014-12-08 | 公立大学法人大阪市立大学 | 銅錯体化合物、銅錯体化合物の製造方法、医療診断用蛍光色素、太陽電池、並びに、発光素子 |
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| US9024026B2 (en) | 2015-05-05 |
| US20130150581A1 (en) | 2013-06-13 |
| CN103052644A (zh) | 2013-04-17 |
| DE102010031831A1 (de) | 2012-01-26 |
| EP2595997B1 (de) | 2015-09-16 |
| JP2013539455A (ja) | 2013-10-24 |
| KR20140010359A (ko) | 2014-01-24 |
| EP2595997A1 (de) | 2013-05-29 |
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