WO2011152182A1 - 被覆部材の製造方法 - Google Patents
被覆部材の製造方法 Download PDFInfo
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- WO2011152182A1 WO2011152182A1 PCT/JP2011/060977 JP2011060977W WO2011152182A1 WO 2011152182 A1 WO2011152182 A1 WO 2011152182A1 JP 2011060977 W JP2011060977 W JP 2011060977W WO 2011152182 A1 WO2011152182 A1 WO 2011152182A1
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- dlc film
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- covering member
- gas
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/04—Pretreatment of the material to be coated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/046—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
Definitions
- the present invention relates to a method for manufacturing a covering member in which at least a part of a substrate surface is covered with a DLC film.
- the DLC film is formed by, for example, a plasma CVD (Plasma Chemical Vapor Deposition) method. Specifically, the processing chamber containing the substrate is evacuated, and a raw material gas containing a carbon-based compound such as methane, hydrogen gas, and argon gas is continuously introduced, and a predetermined processing pressure is set in the processing chamber. Depressurize to.
- a voltage is applied to the base material to generate plasma in the processing chamber, thereby generating ions and radicals from the source gas and causing a chemical reaction on the surface of the base material.
- a film mainly composed of C (carbon) can be deposited on the surface of the film.
- the plasma CVD method a DC plasma CVD method in which a DC voltage is applied to the substrate, a DC pulse plasma CVD method in which a DC pulse voltage is applied, or the like is employed.
- Si silicon
- the conformability of the DLC film in the initial stage of use hereinafter referred to as “initial conformability”
- the DLC film has good low friction properties from the initial stage of use. Can be granted. Therefore, in the plasma CVD method, an organosilicon compound that is a raw material of Si may be added to the raw material gas.
- organosilicon compound for example, a silane compound such as tetramethylsilane is generally used. Further, in the DLC film forming process by plasma CVD under a high pressure reduction (low pressure) such that the processing pressure in the processing chamber is 20 Pa or less, for example, as described in Patent Document 1, hexamethyldisilazane or Hexamethyldisiloxane may be used.
- hexamethyldisilazane is a liquid at normal temperature and pressure, and has a high boiling point of about 125 ° C. at normal pressure. Therefore, in order to continue to introduce such hexamethyldisilazane into the processing chamber in a DLC film forming step under reduced pressure in a large amount and continuously vaporized as described above, for example, a vaporization supply device equipped with a heater or the like And the vaporization supply device needs to be continuously operated during the DLC film forming process. Accordingly, there arises a new problem that the structure and operation of the plasma CVD apparatus are complicated and the energy required for operation is increased.
- tetramethylsilane has a low boiling point of 26 ° C. at normal pressure. For this reason, it is possible to smoothly vaporize at normal temperature without causing heating or the like by simply bringing it into contact with the reduced-pressure atmosphere in the processing chamber, and the above-mentioned problems do not occur. Therefore, in the DLC film forming step under reduced pressure, it is common to use tetramethylsilane as the organosilicon compound.
- the processing pressure is increased as described above. Nevertheless, the effect of improving the deposition rate of the DLC film cannot be obtained sufficiently. That is, when the processing pressure in the processing chamber is increased within the above range, the partial pressure of the carbon-based compound serving as the C material and the silane compound serving as the Si material increases. However, the deposition rate of the DLC film cannot be sufficiently improved to meet the increased partial pressure.
- An object of the present invention is to provide a method for producing a covering member that can increase the deposition rate of the DLC film as much as possible, and can minimize damage to the substrate on which at least a part of the surface of the substrate is the basis of the covering member. There is.
- One embodiment of the present invention is a method of manufacturing a covering member in which at least a part of the surface of a base material is covered with a DLC film, and contains at least a carbon-based compound and oxygen in a processing chamber containing the base material.
- a source gas containing an organosilicon compound is introduced, and plasma is generated by applying a voltage to the substrate under a processing pressure of 100 Pa or more and 400 Pa or less to form a DLC film on the surface of the substrate.
- a method of manufacturing a covering member including a DLC film forming step is provided.
- an oxygen-containing organosilicon compound is selectively used in place of a conventional silane compound such as tetramethylsilane as the organosilicon compound added to the raw material gas.
- a conventional silane compound such as tetramethylsilane
- the film formation rate of the DLC film formed on the surface of the substrate in the DLC film formation process under reduced pressure is compared with the case of using conventional tetramethylsilane or the like. Greatly improved.
- the productivity of the covering member in which at least a part of the surface of the base material is coated with the DLC film can be further improved as compared with the current situation, and the damage received by the base material of the covering member is reduced as much as possible. This makes it possible to expand the range of material selection.
- the oxygen-containing organosilicon compound may be hexamethyldisiloxane.
- the boiling point of hexamethyldisiloxane is about 70 ° C. when the boiling point is 100 ° C. at normal pressure and the processing pressure in the processing chamber is 100 Pa or more and 400 Pa or less. Accordingly, it is sufficiently vaporized in a state where it is in contact with a reduced-pressure atmosphere in the processing chamber, that is, under a reduced pressure, such as a relatively gentle heating of less than 100 ° C., for example, a heating of a bath containing hexamethyldisiloxane. be able to.
- the productivity of the covering member can be further improved in combination with the availability of hexamethyldisiloxane and the low cost.
- a direct current plasma CVD method or a direct current pulse plasma CVD method may be employed, but it is particularly preferable to employ a direct current pulse plasma CVD method.
- the manufacturing method of the said covering member WHEREIN You may generate
- the DC pulse plasma CVD method for example, the use of the DC plasma CVD method, and the generation of abnormal discharge that leads to temperature rise compared to the case where plasma is generated by applying a DC voltage to the substrate. It is possible to further stabilize the plasma generated in the processing chamber while suppressing as much as possible. Therefore, the treatment temperature can be suppressed to, for example, 300 ° C. or lower, and damage to the substrate due to the temperature rise can be minimized.
- the DLC film formed by the direct-current pulse plasma CVD method has a smooth surface, the initial conformability can be further improved in combination with the fact that the DLC film contains Si.
- the deposition rate of the DLC film can be increased as much as possible, and the productivity of the covering member in which at least a part of the surface of the base material is covered with the DLC film can be further improved from the current state. Damage to the base material of the base can be minimized.
- FIG. 1 is a schematic cross-sectional view showing a configuration of a plasma CVD apparatus 1 used in a method for manufacturing a covering member 20 according to an embodiment of the present invention.
- the covering member 20 can be manufactured by a direct current pulse plasma CVD method or a direct current plasma CVD method.
- the plasma CVD apparatus 1 shown in the figure includes a processing chamber 3 surrounded by a partition wall 2, a base 5 that holds a base material 4 that is a source of a covering member 20 in the processing chamber 3, and a source gas in the processing chamber 3.
- a source gas introduction pipe 6 for introducing gas, an exhaust system 7 for evacuating the inside of the processing chamber 3, and a DC pulse voltage or a DC voltage for converting the gas introduced into the processing chamber 3 into plasma.
- a power source 8 to be generated.
- the base 5 includes a support plate 9 in a horizontal posture and a support shaft 10 that extends in the vertical direction and supports the support plate 9.
- a support plate 9 in a horizontal posture
- a support shaft 10 that extends in the vertical direction and supports the support plate 9.
- the base 5 for example, a three-stage type in which three support plates 9 are arranged in the vertical direction is employed.
- the base 5 is entirely formed using a conductive material such as copper.
- a negative electrode of a power source 8 is connected to the base 5.
- the partition wall 2 of the processing chamber 3 is formed using a conductive material such as stainless steel.
- a positive electrode of a power source 8 is connected to the partition wall 2.
- the partition wall 2 is grounded.
- the partition wall 2 and the base 5 are insulated by an insulating member 11. Therefore, the partition wall 2 is kept at the ground potential.
- the source gas introduction pipe 6 extends in the horizontal direction above the base 5 in the processing chamber 3.
- a number of source gas discharge holes 12 arranged along the longitudinal direction of the source gas introduction pipe 6 are formed in a portion of the source gas introduction pipe 6 facing the base 5.
- a source gas containing a carbon-based compound and an oxygen-containing organosilicon-based compound as component gases is supplied to the source gas introduction pipe 6.
- the source gas introduction pipe 6 is connected to a plurality of branch introduction pipes (not shown) for introducing each component gas from the supply source of each component gas (a gas cylinder, a container for storing liquid, etc.) to the processing chamber 3. ing.
- Each branch introduction pipe is provided with a flow rate adjusting valve (not shown) for adjusting the flow rate of the component gas from each supply source.
- the container which accommodates the liquid among supply sources is provided with the heating means (not shown) for heating a liquid as needed.
- the exhaust system 7 includes a first exhaust pipe 13 and a second exhaust pipe 14 that communicate with the processing chamber 3, a first on-off valve 15, a second on-off valve 16, a third on-off valve 19, a first pump 17, and a first pump 17. 2 pump 18.
- a first opening / closing valve 15 and a first pump 17 are interposed in this order from the processing chamber 3 side in the middle of the first exhaust pipe 13.
- a low vacuum pump such as an oil rotary vacuum pump (rotary pump) or a diaphragm vacuum pump is employed.
- the oil rotary vacuum pump is a positive displacement vacuum pump that reduces the airtight space and the ineffective space between components such as a rotor, a stator, and a sliding blade with oil.
- Examples of the oil rotary vacuum pump adopted as the first pump 17 include a rotary blade type oil rotary vacuum pump and a swing piston type vacuum pump.
- the tip of the second exhaust pipe 14 is connected between the first opening / closing valve 15 and the first pump 17 in the first exhaust pipe 13.
- a second opening / closing valve 16, a second pump 18, and a third opening / closing valve 19 are interposed in this order from the processing chamber 3 side in the middle of the second exhaust pipe 14.
- a high vacuum pump such as a turbo molecular pump or an oil diffusion pump is employed.
- FIG. 2 is a cross-sectional view showing a surface layer portion of the covering member 20 manufactured by the manufacturing method using the plasma CVD apparatus 1.
- the covering member 20 includes a base material 4 and a DLC film 21 formed on the surface of the base material 4.
- a material of the base material 4 for example, when the covering member 20 is various sliding members mounted on an automobile, tool steel, carbon steel, stainless steel, etc. that are generally used to form the sliding member are used. Various steel materials are mentioned.
- the content ratio of Si in the DLC film 21 is, for example, about 7% by mass or more and 30% by mass or less, particularly about 20% by mass. .
- the thickness of the DLC film 21 is, for example, about 0.1 to 10.0 ⁇ m.
- the peeling start load that causes mode 2 “local peeling” is defined as the peeling strength of the DLC film 21 on the base material 4 by the scratch test specified in JSME S010 (1996) of the Japan Society of Mechanical Engineers, the peeling The starting load is, for example, 25N or more.
- the base material 4 is set on the support plate 9 of the base 5 in the processing chamber 3. After that, the processing chamber 3 is closed. Next, after the first pump 17 is driven with the first, second, and third on-off valves 15, 16, 19 closed, the inside of the processing chamber 3 is evacuated by opening the first on-off valve 15. When the inside of the processing chamber 3 is evacuated to a predetermined vacuum level by the first pump 17, the first opening / closing valve 15 is closed and the third opening / closing valve 19 is opened to drive the second pump 18. By opening the valve 16, the inside of the processing chamber 3 is further evacuated by the first and second pumps 17 and 18.
- the raw material gas is introduced into the processing chamber 3 through the raw material gas introduction pipe 6 from a supply source (not shown) while continuing the exhausting alone.
- a source gas for example, a carbon compound and an oxygen-containing organosilicon compound added with hydrogen gas, argon gas, or the like are used. Hydrogen gas and argon gas act to stabilize the plasma.
- the argon gas also acts to harden the DLC film 21 by pressing and solidifying C deposited on the surface of the substrate 4.
- Examples of the carbon-based compound include one or two hydrocarbon compounds that are gas or liquid at normal temperature and normal pressure, such as methane (CH 4 ), acetylene (C 2 H 2 ), and benzene (C 6 H 6 ).
- Examples of the oxygen-containing organosilicon compound include one or more organosilicon compounds containing an oxygen atom at any position in the molecule, such as a siloxane compound and an alkoxysilane compound.
- examples of the siloxane compound include hexamethyldisiloxane [(CH 3 ) 3 Si—O—Si (CH 3 ) 3 , boiling point at normal pressure: 100 ° C.], 1,1,3,3-tetramethyldi Siloxane [(CH 3 ) 2 SiH—O—SiH (CH 3 ) 2 , boiling point at normal pressure: 71 ° C.] and the like are preferably used.
- alkoxysilane compound trimethylethoxysilane [(CH 3 ) 3 SiOC 2 H 5 , boiling point at normal pressure: 75 ° C.], dimethoxydimethylsilane [(CH 3 ) 2 Si (OCH 3 ) 2 ), normal pressure And the like, methyltrimethoxysilane [CH 3 Si (OCH 3 ) 3 ), boiling point at normal pressure: 103 ° C.] and the like are preferably used.
- hexamethyldisiloxane is particularly preferable for the reason described above. While adjusting the flow rate adjustment valve of the branch introduction pipe (not shown) for each component gas, while adjusting the flow rate ratio of each component gas and the total flow rate of the raw material gas that is a mixed gas of each component gas, The source gas is introduced into the processing chamber 3 through the source gas introduction pipe 6 to adjust the processing pressure in the processing chamber 3 to 100 Pa or more and 400 Pa or less.
- the processing pressure is less than 100 Pa, since the amount of the source gas introduced into the processing chamber 3 is small as described above, the deposition speed of the DLC film 21 is low, and the DLC film 21 having a predetermined thickness is formed. Takes a long time. Therefore, the initial purpose of increasing the deposition rate of the DLC film 21 as much as possible to further improve the productivity of the covering member 20 as compared to the present state and minimizing the damage to the base material 4 that is the basis of the covering member 20 is as much as possible. Cannot be achieved.
- the processing pressure exceeds 400 Pa, plasma cannot be generated stably, and thus a good DLC film 21 having a uniform density and excellent friction and wear resistance is formed on the substrate. Can not do it.
- the flow rate of the oxygen-containing organosilicon compound among the component gases is, for example, that of carbon compound, hydrogen gas, and argon gas in order to achieve a suitable range of the content ratio of Si contained in the DLC film 21 described above.
- the total flow rate is 2.20 as a ratio to the reference flow rate, it is preferably adjusted to 0.01 or more, particularly 0.03 or more with respect to the total flow rate 2.20. .20 to 0.12 or less, particularly 0.06 or less.
- the flow rate of the oxygen-containing organosilicon compound is less than the above range, the effect of increasing the deposition rate of the DLC film 21 by adding the oxygen-containing organosilicon compound to the mixed gas cannot be sufficiently obtained.
- the initial purpose of reducing the damage received by the base material 4 as a base of the covering member 20 as much as possible cannot be achieved while further improving the productivity.
- the effect of improving the initial conformability of the DLC film 21 by adding Si in the preferable range to the DLC film 21 to be formed may not be obtained.
- a large amount of powder mainly containing excess Si may be generated in the processing chamber 3.
- the powder is taken into the DLC film 21 to reduce the uniformity of density and thickness, the peel strength with respect to the base material 4 or the like, or penetrates into each part constituting the plasma CVD apparatus 1 and functions of each part. May be disturbed. Furthermore, as a result of the need for a powder removal step to prevent these problems from occurring, the productivity of the covering member 20 may be reduced.
- the flow rate of the carbon compound is preferably adjusted to about 50% of the total flow rate 2.20 of the carbon compound, hydrogen gas, and argon gas.
- the power supply 8 is turned on to generate a potential difference between the partition wall 2 and the base 5, thereby generating plasma in the processing chamber 3.
- a plasma is generated by applying a DC pulse voltage between the partition wall 2 and the base 5 by turning on the power supply 8. Due to the generation of this plasma, ions and radicals are generated from the source gas in the processing chamber 3 and are attracted to the surface of the substrate 4 based on the potential difference. Then, a chemical reaction occurs on the surface of the substrate 4, and a DLC film 21 containing Si as a main component is deposited on the surface of the substrate 4.
- FIG. 3 is a graph showing an example of a waveform of a DC pulse voltage applied from the power source 8 to the base material 4.
- the set voltage value of the DC pulse voltage is set to a value of about ⁇ 1000 V, for example. That is, when the power supply 8 is turned on, a potential difference of 1000 V is generated between the partition wall 2 and the base 5. In other words, a negative DC pulse voltage of 1000 V is applied to the substrate 4 set on the base 5, and the substrate 4 functions as a negative electrode. Since the waveform is pulsed, abnormal discharge does not occur in the processing chamber 3 even when such a high voltage is applied, and the temperature rise of the base material 4 can be suppressed, and the processing temperature can be suppressed to 300 ° C. or lower, for example.
- a value obtained by dividing the pulse width ⁇ by the pulse period represented by the reciprocal (1 / f) of the frequency f, that is, the pulse width ⁇ is multiplied by the frequency f as shown in the equation (1).
- the duty ratio obtained as a value is preferably set to 5% or more, particularly about 50%.
- the frequency f is preferably set to 200 Hz or more and 2000 Hz or less, particularly about 1000 Hz.
- a direct current plasma CVD method may be employed instead of the direct current pulse plasma CVD method. That is, when the power source 8 is turned on, a DC voltage is applied between the partition wall 2 and the base 5 to generate plasma. Due to the generation of this plasma, ions and radicals are generated from the source gas in the processing chamber 3 and are attracted to the surface of the substrate 4 based on the potential difference. Then, a chemical reaction occurs on the surface of the substrate 4, and a DLC film 21 containing Si as a main component is deposited on the surface of the substrate 4.
- the deposition rate of the DLC film 21 can be increased, the productivity of the covering member 20 can be further improved from the current level. Further, although there is a possibility of temperature rise, damage to the base material 4 that is the base of the covering member 20 can be reduced.
- the power supply 8 is turned off and the introduction of the source gas is stopped. Cool down to room temperature while continuing to exhaust.
- the first opening / closing valve 15 is closed, and instead, a leak valve (not shown) is opened to introduce outside air into the processing chamber 3, the inside of the processing chamber 3 is returned to normal pressure, the processing chamber is opened, and the substrate 4 is opened. Take out. Thereby, the covering member 20 in which at least a part of the surface of the substrate 4 is covered with the DLC film 21 is manufactured.
- a clutch plate of a friction clutch for example, a clutch plate of a friction clutch, a worm of a steering device (a DLC film is formed on a tooth surface), an inner ring / outer ring of a bearing (a DLC film is formed on a raceway surface), a bearing retainer, and a propeller shaft (drive) Shaft, male spline part and / or female spline part).
- the surface of the substrate 4 Prior to forming the DLC film 21 on the surface of the substrate 4 by performing the DC pulse plasma CVD method or the DC plasma CVD method, the surface of the substrate 4 may be subjected to ion bombardment. When performing ion bombardment, for example, plasma is generated by turning on the power supply 8 while introducing argon gas and hydrogen gas into the processing chamber 3.
- ions and radicals are generated from the argon gas in the processing chamber 3, and different molecules and the like that are bombarded on the surface of the substrate 4 based on the potential difference and adsorbed on the surface of the substrate 4 are sputtered. It can be removed, the surface can be activated, or the atomic arrangement can be modified.
- the peel strength of the DLC film 21 formed by the plasma CVD method in the next step can be increased, and the frictional properties and wear resistance can be further improved.
- the DLC film 21 is not directly formed on the surface of the base material 4, and a nitride film such as SiN or CrN, or an intermediate layer made of Cr, Ti, SiC or the like is provided between the surface of the base material 4 and the DLC film 21.
- positioned may be sufficient.
- Examples and Comparative Examples a DLC film was formed on the surface of a base material 4 made of tool steel (SKH4) using the plasma CVD apparatus 1 shown in FIG.
- methane as a carbon-based compound
- hexamethyldisiloxane as an oxygen-containing organosilicon-based material
- a mixed gas of hydrogen gas and argon gas is used as a raw material gas.
- hexamethyldisiloxane is used instead.
- Tetramethylsilane was used as the silane compound.
- the ratio of the flow rates of the three components of methane, hydrogen gas, and argon gas is methane: 1.00, hydrogen: 0.60, and argon: 0.60, and the total of the flow rate ratios is 2.20. It was.
- the flow rate of hexamethyldisiloxane was adjusted to 0.03 (Example 1) and 0.06 (Example 2), respectively, with respect to the total ratio of the flow rates of the three components of 2.20.
- the flow rate of tetramethylsilane was adjusted to 0.06 with respect to the total ratio of the flow rates of the three components, 2.20.
- the power source 8 one that generates a DC pulse voltage was used.
- the set voltage value of the DC pulse voltage was set to -1000 V
- the frequency f was set to 1000 Hz
- the duty ratio was set to 50%.
- the inside of the processing chamber 3 is evacuated according to the procedure described above, and then only argon gas is introduced, the power source 8 is turned on to generate plasma in the processing chamber 3 to perform ion bombardment, and then the source gas is introduced. Then, the processing pressure in the processing chamber 3 was adjusted to 400 Pa. Next, the power source 8 was turned on again to generate plasma in the processing chamber 3, and a DLC film 21 was formed on the surface of the substrate 4 by direct current pulse plasma CVD.
- the deposition rate of the DLC film can be improved by using hexamethyldisiloxane, which is an oxygen-containing organosilicon compound, instead of tetramethylsilane, which is a silane compound.
- a DLC film was formed on the surface of the base material 4 made of tool steel (SKH4) by a direct current plasma CVD method to produce a covering member.
- a mixed gas of methane as a carbon-based compound, tetramethylsilane as a silane compound, hydrogen gas, and argon gas was used as a raw material gas.
- the ratio of the flow rates of the three components of methane, hydrogen gas, and argon gas is methane: 1.00, hydrogen: 0.60, and argon: 0.60, and the flow rate of tetramethylsilane is 3 It adjusted to 0.06 with respect to the total 2.20 of the ratio of the flow rate of a component.
- the set voltage value of the DC voltage was set to ⁇ 1000 V, respectively, and the treatment pressure was adjusted to 50 to 400 Pa.
- FIG. 4 is a graph showing the nanoindentation hardness of the DLC film included in the covering members manufactured using Examples 1 and 2 and Comparative Example 1.
- the DLC film 21 included in the covering member 20 manufactured using the first embodiment may be referred to as “DLC film 21 of the first embodiment”, and the coating manufactured using the second embodiment.
- the DLC film 21 included in the member 20 may be referred to as “DLC film 21 of Example 2”.
- the DLC film included in the covering member manufactured using Comparative Example 2 may be referred to as “DLC film of Comparative Example 2”.
- the DLC film 21 of Example 2 has sufficient hardness, it is slightly softer than the DLC film of Comparative Example 2.
- the DLC film 21 of Example 1 has the same hardness as the DLC film of Comparative Example 2. Therefore, it can be seen that a DLC film having a hardness as high as that of a DLC film formed using a silane compound as a raw material gas under a high temperature environment can be manufactured using the manufacturing method of the first embodiment. Moreover, it turns out that the DLC film which has sufficient hardness can be manufactured using the manufacturing method of this Example 2.
- the DLC film has a structure in which both a graphite bond (sp 2 bond) and an amorphous structure are mixed.
- the characteristics (physical properties) of the DLC film greatly depend on the ratio between the graphite bond and the amorphous structure contained in the DLC film.
- Raman spectra of the measured DLC film using a Raman spectroscopy can be waveform separation and D band having a peak near 1350 cm -1, in the G band having a peak near 1580 cm -1.
- the G band indicates the presence of sp 2 bonds (graphite bonds), and the D band indicates the presence of sp 2 bonds broken.
- the presence of the D band indicates that the DLC film has an amorphous structure.
- FIG. 5 is a graph showing an example of a Raman spectrum of the DLC films of Examples and Comparative Examples.
- FIG. 6 is a graph obtained by separating the Raman spectrum of the DLC film 21 of Example 1 into a G band and a D band.
- FIG. 7 is a graph obtained by separating the Raman spectrum of the DLC film of Comparative Example 2 into a G band and a D band.
- the Raman spectra of the DLC films of Examples 1 and 2 and Comparative Example 2 are shown side by side in the vertical direction shown in FIG. 5, and the peak intensity around 1800 cm ⁇ 1 of each Raman spectrum is the weakest. .
- FIG. 5 shows that each Raman spectrum has a peak near the peak position of the G band and the peak position of the D band.
- FIGS 6 and 7 show not only the Raman spectrum but also the curve fitting of the Raman spectrum, the curve fitting S1 and S2 of the entire Raman spectrum, the curve fitting G1 and G2 of the Raman spectrum of the G band, and the Raman spectrum of the D band.
- Curve fittings D1 and D2 are shown.
- the entire curve fittings S1 and S2 are waveforms obtained by adding the curve fittings G1 and G2 for the G band and the curve fittings D1 and D2 for the D band.
- Each curve fitting S1, S2, G1, G2, D1, D2 can be obtained, for example, by a general curve fitting method in which a Raman spectrum is fitted with a sum of a plurality of Gaussian functions or Lorentz functions. 6 and 7 that the peak intensity ratio in the DLC film 21 of Example 1 and the peak intensity ratio in the DLC film of Comparative Example 2 are substantially the same. Therefore, it can be seen that a DLC film having excellent hardness comparable to that of a DLC film formed using a silane compound as a source gas in a high temperature environment can be manufactured using the manufacturing method of Example 1.
Abstract
Description
DLC膜は、例えばプラズマCVD(Plasma Chemical Vapor Deposition)法によって形成される。具体的には、基材を収容する処理室内を真空排気し、かつメタン等の炭素系化合物、水素ガス、およびアルゴンガス等を含む原料ガスを継続的に導入して処理室内を所定の処理圧力に減圧する。そして、その減圧状態を維持しながら、基材に電圧を印加して処理室内にプラズマを発生させることで、原料ガスからイオンやラジカルを生成させるとともに基材の表面で化学反応させて、基材の表面にC(炭素)を主体とする膜(DLC膜)を堆積させることができる。
形成するDLC膜中にSi(ケイ素)を含有させると、使用初期におけるDLC膜のなじみ性(以下「初期なじみ性」という。)を向上して、前記使用初期からDLC膜に良好な低摩擦性を付与できる。そのためプラズマCVD法において、Siの原料となる有機ケイ素系化合物を原料ガス中に添加する場合がある。
また、基材が長時間に亘ってプラズマに曝され続けることと、それに伴う温度上昇とによって前記基材が受けるダメージが大きくなる傾向がある。したがって、基材の材料選択の幅が狭くなる、つまりダメージに十分に耐え得る材料からなる基材の表面にしかDLC膜を形成できないという問題もある。
しかし、かかる低減圧下でのDLC膜形成工程では、処理圧力中の所定の分圧を維持するために、成膜を実施している間、有機ケイ素系化合物を多量に、しかも継続的に処理室内に導入しつづける必要がある。
すなわち処理室内の処理圧力を前記範囲内に高めると、Cの原料となる炭素系化合物やSiの原料となるシラン化合物の分圧が増加する。しかしながら、DLC膜の成膜速度を、その分圧の増加分に見合うほどには十分に向上させることができないのである。
本発明の目的は、DLC膜の成膜速度をできるだけ高めて、基材表面の少なくとも一部が前記被覆部材のもとになる基材が受けるダメージを極力小さくできる被覆部材の製造方法を提供することにある。
前記被覆部材の製造方法は、前記酸素含有有機ケイ素系化合物は、ヘキサメチルジシロキサンであってもよい(請求項2)。
DLC膜形成工程においては、直流プラズマCVD法、および直流パルスプラズマCVD法のいずれを採用してもよいが、特に直流パルスプラズマCVD法を採用するのが好ましい。
この方法、つまり直流パルスプラズマCVD法によれば、例えば直流プラズマCVD法を採用して、基材に直流電圧を印加することによりプラズマを発生させる場合と比べて、温度上昇に繋がる異常放電の発生をできるだけ抑制しながら、処理室内に発生させるプラズマをより一層安定化させることができる。そのため処理温度を例えば300℃以下に抑制して、温度上昇によって基材が受けるダメージを極力小さくすることができる。
前記被覆部材の製造方法によれば、DLC膜の成膜速度をできるだけ高めて、基材表面の少なくとも一部がDLC膜で被覆された被覆部材の生産性を現状よりさらに向上できるとともに、被覆部材のもとになる基材が受けるダメージを極力小さくできる。
図のプラズマCVD装置1は、隔壁2で取り囲まれた処理室3と、処理室3内で被覆部材20のもとになる基材4を保持する基台5と、処理室3内に原料ガスを導入するための原料ガス導入管6と、処理室3内を真空排気するための排気系7と、処理室3内に導入されたガスをプラズマ化させるための直流パルス電圧、または直流電圧を発生させる電源8とを備えている。
基台5は、全体が銅などの導電材料を用いて形成されている。基台5には電源8の負極が接続されている。
原料ガス導入管6には、成分ガスとして炭素系化合物、および酸素含有有機ケイ素系化合物を含む原料ガスが供給される。原料ガス導入管6には、各成分ガスの供給源(ガスボンベや液体を収容する容器等)からそれぞれの成分ガスを処理室3に導くための複数の分岐導入管(図示せず)が接続されている。各分岐導入管には、前記各供給源からの成分ガスの流量を調節するための流量調節バルブ(図示せず)等が設けられている。また供給源のうち液体を収容する容器には、必要に応じて、液体を加熱するための加熱手段(図示せず)が設けられている。
第1排気管13の途中部には、第1開閉バルブ15および第1ポンプ17が、処理室3側からこの順で介装されている。第1ポンプ17としては、例えば油回転真空ポンプ(ロータリポンプ)やダイヤフラム真空ポンプなどの低真空ポンプが採用される。油回転真空ポンプは、ロータ、ステータおよび摺動翼板などの部品の間の気密空間および無効空間を油によって減少させる容積移送式真空ポンプである。第1ポンプ17として採用される油回転真空ポンプとしては、回転翼型油回転真空ポンプや揺動ピストン型真空ポンプが挙げられる。
図2を参照して、被覆部材20は基材4と、基材4の表面に形成されたDLC膜21とを含む。
基材4の材質としては、例えば被覆部材20が自動車に搭載される各種摺動部材である場合、前記摺動部材を形成するために一般的に用いられる工具鋼、炭素鋼、ステンレス鋼等の各種鋼材が挙げられる。
次いで第1、第2、および第3開閉バルブ15、16、19を閉じた状態で第1ポンプ17を駆動させたのち、第1開閉バルブ15を開くことにより処理室3内を真空排気する。処理室3内が第1ポンプ17によって所定の真空度まで真空排気された時点で第1開閉バルブ15を閉じるとともに第3開閉バルブ19を開いて第2ポンプ18を駆動させた後、第2開閉バルブ16を開くことにより、第1および第2ポンプ17、18によって処理室3内をさらに真空排気する。
原料ガスとしては、例えば炭素系化合物、および酸素含有有機ケイ素系化合物に、さらに水素ガス、およびアルゴンガス等を加えたものを用いる。水素ガス、およびアルゴンガスはプラズマを安定化させる作用をする。またアルゴンガスは、基材4の表面に堆積したCを押し固めてDLC膜21を硬膜化する作用もする。
また酸素含有有機ケイ素系化合物としては、例えばシロキサン化合物やアルコキシシラン化合物等の、分子中の任意の位置に酸素原子を含む有機ケイ素系化合物の1種または2種以上が挙げられる。
またアルコキシシラン化合物としては、トリメチルエトキシシラン〔(CH3)3SiOC2H5、常圧での沸点:75℃〕、ジメトキシジメチルシラン〔(CH3)2Si(OCH3)2)、常圧での沸点:81℃〕、メチルトリメトキシシラン〔CH3Si(OCH3)3)、常圧での沸点:103℃〕等が好適に使用される。
前記各成分ガスのための、図示しない分岐導入管の流量調節バルブを調節して、前記各成分ガスの流量比、および各成分ガスの混合ガスである原料ガスの総流量を調節しながら、前記原料ガスを、原料ガス導入管6を通して処理室3内に導入して、処理室3内の処理圧力を100Pa以上、400Pa以下に調節する。
そのため、DLC膜21の成膜速度をできるだけ高めて被覆部材20の生産性を現状よりさらに向上するとともに、被覆部材20のもとになる基材4が受けるダメージを極力小さくするという初期の目的を達成することができない。
また各成分ガスのうち酸素含有有機ケイ素系化合物の流量は、先に説明したDLC膜21中に含まれるSiの含有割合の好適範囲を達成するために、例えば炭素化合物と水素ガスとアルゴンガスの合計の流量を、基準になる流量との比で2.20としたとき、合計の流量2.20に対して0.01以上、特に0.03以上に調節するのが好ましく、合計の流量2.20に対して0.12以下、特に0.06以下に調節するのが好ましい。
次いで電源8をオンして、隔壁2と基台5との間に電位差を生じさせることにより、処理室3内にプラズマを発生させる。
例えば直流パルスプラズマCVD法では、電源8をオンすることにより、隔壁2と基台5との間に直流パルス電圧を印加してプラズマを発生させる。このプラズマの発生により、処理室3内において原料ガスからイオンやラジカルが生成されるとともに、電位差に基づいて基材4の表面に引き付けられる。そして基材4の表面で化学反応が生じて、基材4の表面にCを主体としてSiを含有するDLC膜21が堆積される。
デューティー比=τ×f (1)
本実施形態においては、直流パルスプラズマCVD法に代えて直流プラズマCVD法を採用してもよい。すなわち電源8をオンすることにより、隔壁2と基台5との間に直流電圧を印加してプラズマを発生させる。このプラズマの発生により、処理室3内において原料ガスからイオンやラジカルが生成されるとともに、前記電位差に基づいて基材4の表面に引き付けられる。そして基材4の表面で化学反応が生じて、基材4の表面にCを主体としてSiを含有するDLC膜21が堆積される。
前記DLC膜形成工程を実施して基材4の表面に所定の膜厚を有するDLC膜21が形成された時点で電源8をオフするとともに、原料ガスの導入を停止した後、第1ポンプ17による排気を続けながら常温まで冷却する。次いで第1開閉バルブ15を閉じ、代わって図示しないリークバルブを開いて処理室3内に外気を導入して、処理室3内を常圧に戻した後、処理室を開いて基材4を取り出す。これにより基材4の表面の少なくとも一部がDLC膜21によって被覆された被覆部材20が製造される。
なお直流パルスプラズマCVD法、または直流プラズマCVD法を実施して基材4の表面にDLC膜21を形成するのに先立って、基材4の表面をイオンボンバード処理してもよい。イオンボンバード処理を実施する場合は、例えば処理室3内にアルゴンガス、および水素ガスを導入しながら電源8をオンしてプラズマを発生させる。このプラズマの発生により、処理室3内においてアルゴンガスからイオンやラジカルが生成されるとともに、電位差に基づいて基材4の表面に打ち付けられて、基材4の表面に吸着される異分子等をスパッタリング除去したり、前記表面を活性化したり原子配列等を改質したりできる。
また基材4の表面上に直接DLC膜21が形成されずに、基材4の表面とDLC膜21との間に、例えばSiN、CrN等の窒化膜やCr、Ti、SiC等からなる中間層が配置された構成であってもよい。
実施例および比較例では、図1に示すプラズマCVD装置1を用いて、工具鋼(SKH4)からなる基材4の表面にDLC膜を形成し、被覆部材を製造した。
原料ガスとして実施例では、炭素系化合物としてのメタン、酸素含有有機ケイ素系含有物としてのヘキサメチルジシロキサン、水素ガスおよびアルゴンガスの混合ガスを用い、比較例1では、ヘキサメチルジシロキサンに代えて、シラン化合物としてのテトラメチルシランを用いた。
実施例ではヘキサメチルジシロキサンの流量を、前記3成分の流量の比の合計2.20に対して、それぞれ0.03(実施例1)、0.06(実施例2)に調節した。また比較例ではテトラメチルシランの流量を、前記3成分の流量の比の合計2.20に対して0.06に調節した。
先に説明した手順で処理室3内を真空排気し、次いでアルゴンガスのみを導入して電源8をオンして処理室3内にプラズマを発生させてイオンボンバード処理をした後、原料ガスを導入して処理室3内の処理圧力を400Paに調節した。次いで再び電源8をオンして処理室3内にプラズマを発生させて、直流パルスプラズマCVD法により基材4の表面にDLC膜21を形成した。
結果を表1に示す。
比較例2は、直流プラズマCVD法により、工具鋼(SKH4)からなる基材4の表面にDLC膜を形成して被覆部材を製造した。比較例2では、原料ガスとして、炭素系化合物としてのメタン、シラン化合物としてのテトラメチルシラン、水素ガスおよびアルゴンガスの混合ガスを用いた。前記各成分ガスのうちメタン、水素ガス、およびアルゴンガスの3成分の流量の比をメタン:1.00、水素:0.60およびアルゴン:0.60とし、テトラメチルシランの流量を、前記3成分の流量の比の合計2.20に対して0.06に調節した。直流電圧の設定電圧値は、それぞれ-1000Vに設定し、処理圧力を50~400Paに調節した。
ラマン分光法を用いて測定されたDLC膜のラマンスペクトルは、1350cm-1付近にピークを有するDバンドと、1580cm-1付近にピークを有するGバンドとに波形分離することができる。Gバンドはsp2結合(グラファイト結合)の存在を示し、Dバンドはsp2結合が崩壊したものの存在を示す。また、Dバンドの存在は、DLC膜がアモルファス構造を有していることを示す。
図5では、実施例1および2、ならびに比較例2のDLC膜の各ラマンスペクトルを、図5に示す上下方向に並べて記載しており、各ラマンスペクトルの1800cm-1付近のピーク強度が最も弱い。この図5から、各ラマンスペクトルは、Gバンドのピーク位置付近およびDバンドのピーク位置付近でそれぞれピークを有していることがわかる。
図6および図7から、実施例1のDLC膜21におけるピーク強度比と、比較例2のDLC膜におけるピーク強度比とがほぼ同程度であることが理解される。そのため、高温環境下で、かつシラン化合物を原料ガスとして形成されたDLC膜と同程度の優れた硬度を有するDLC膜を、実施例1の製造方法を用いて製造できることがわかる。
本出願は、2010年5月31日に日本国特許庁に提出された特願2010-124552号に対応しており、この出願の全開示はここに引用により組み込まれるものとする。
Claims (3)
- 基材表面の少なくとも一部がDLC膜で被覆された被覆部材の製造方法であって、
前記基材を収容する処理室内に、少なくとも炭素系化合物、および酸素含有有機ケイ素系化合物を含む原料ガスを導入して処理圧力100Pa以上、400Pa以下の条件下、前記基材に電圧を印加することによりプラズマを発生させて、前記基材の表面にDLC膜を形成するDLC膜形成工程を含む、被覆部材の製造方法。 - 前記酸素含有有機ケイ素系化合物は、ヘキサメチルジシロキサンである請求項1に記載の被覆部材の製造方法。
- 前記DLC膜形成工程において、前記基材に直流パルス電圧を印加することによりプラズマを発生させる請求項1または2に記載の被覆部材の製造方法。
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WO2015086733A1 (en) | 2013-12-13 | 2015-06-18 | Sanofi | Dual glp-1/glucagon receptor agonists |
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JP2016094670A (ja) | 2016-05-26 |
JP6071020B2 (ja) | 2017-02-01 |
JPWO2011152182A1 (ja) | 2013-07-25 |
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EP2578726A4 (en) | 2017-04-05 |
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