WO2011148600A1 - Procédé pour la production d'une poudre d'alliage de cu-in-ga, procédé pour la production d'une poudre d'alliage de cu-in-ga-se, procédé pour la production d'un alliage de cu-in-ga-se fritté, poudre d'alliage de cu-in-ga, et poudre d'alliage de cu-in-ga-se - Google Patents

Procédé pour la production d'une poudre d'alliage de cu-in-ga, procédé pour la production d'une poudre d'alliage de cu-in-ga-se, procédé pour la production d'un alliage de cu-in-ga-se fritté, poudre d'alliage de cu-in-ga, et poudre d'alliage de cu-in-ga-se Download PDF

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WO2011148600A1
WO2011148600A1 PCT/JP2011/002813 JP2011002813W WO2011148600A1 WO 2011148600 A1 WO2011148600 A1 WO 2011148600A1 JP 2011002813 W JP2011002813 W JP 2011002813W WO 2011148600 A1 WO2011148600 A1 WO 2011148600A1
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alloy
powder
region
producing
alloy powder
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PCT/JP2011/002813
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Japanese (ja)
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泰彦 赤松
広瀬　洋一
貴継 萩埜
美原　康雄
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株式会社アルバック
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Definitions

  • the present invention relates to a method for producing a Cu—In—Ga—Se alloy sintered body that can be used as a sputtering target, and further relates to a Cu—In—Ga alloy that is a raw material for a Cu—In—Ga—Se alloy sintered body.
  • the present invention relates to a powder, a Cu—In—Ga—Se alloy powder, and a production method thereof.
  • Cu (In, Ga) Se 2 solar cells using a CIGS layer made of a Cu—In—Ga—Se alloy (hereinafter referred to as CIGS) as an absorption layer have the highest conversion efficiency and long-term reliability among thin film solar cells. Since it has been proven, it is considered to be a promising next-generation solar cell.
  • CIGS Cu—In—Ga—Se alloy
  • As a method of forming this CIGS layer a method is widely known in which a Cu—Ga film and an In film are stacked and heat-treated in an Se atmosphere.
  • Patent Document 1 discloses a method for forming a CIGS layer by this method.
  • a sputtering method using a Cu—Ga alloy target and an In target is used for the formation of the Cu—Ga film and the In film. If Se is supplied by a sputtering method using a Se target, the conversion efficiency of the CIGS layer formed by damage caused by Se ions is reduced, and therefore Se is supplied by heat treatment.
  • a CIGS layer can be formed by a sputtering method using a CIGS target that is a sputtering target made of CIGS, it is not necessary to stack a multilayer film or to perform an Se atmosphere treatment, and it is possible to reduce manufacturing costs. .
  • an object of the present invention is to provide a Cu—In—Ga—Se alloy sintered body that can be safely manufactured, its material, and a manufacturing method thereof.
  • 3 is a flowchart showing a method for manufacturing a Cu—In—Ga—Se alloy target according to an embodiment of the present invention.
  • 2 is a photograph of a Cu—In—Ga alloy ingot described in an embodiment of the present invention. It is a schematic diagram which shows the aspect of the strip casting method which concerns on embodiment of this invention.
  • 4 is a photograph of a Cu—In—Ga alloy ribbon according to an embodiment of the present invention. 2 is a SEM image of a fracture surface of a Cu—In—Ga alloy ribbon according to an embodiment of the present invention. It is a graph which shows the result of EDX of the Cu-In-Ga alloy ribbon which concerns on embodiment of this invention.
  • FIG. 4 is a graph showing XRD results of a Cu—In—Ga alloy according to an embodiment of the present invention.
  • 3 is a photograph of Cu—In—Ga—Se alloy powder according to an embodiment of the present invention.
  • 4 is a graph showing TG / DTA results of Cu—In—Ga alloy and Se mixed powder according to an embodiment of the present invention. It is a graph which shows the result of TG / DTA of In and Se mixed powder concerning a comparative example.
  • 6 is a graph showing XRD results of a Cu—In—Ga alloy and Se mixed powder before firing and a Cu—In—Ga—Se alloy powder after firing according to an embodiment of the present invention.
  • Cu—In—Ga—Se alloy powder fired at 500 ° C. and a Cu—In—Ga—Se alloy powder fired at 620 ° C. according to an embodiment of the present invention Cu—In—Ga alloy and Se mixed powder before firing, Cu—In—Ga—Se alloy powder fired at 500 ° C., and Cu—In—Ga—Se alloy powder fired at 620 ° C. according to an embodiment of the present invention It is a SEM image of.
  • a method for producing a Cu—In—Ga alloy powder for producing a Cu—In—Ga—Se alloy produces a molten Cu—In—Ga alloy.
  • the Cu—In—Ga alloy ribbon is produced by solidifying the above-described molten Cu—In—Ga alloy by a strip casting method.
  • the Cu—In—Ga alloy ribbon is pulverized.
  • the first region mainly composed of In and the second region mainly composed of Cu—Ga alloy and dispersed in the first region and having a particle size of 1 ⁇ m or less are formed. It is possible to produce a Cu—In—Ga alloy powder.
  • this Cu—In—Ga alloy powder is mixed with Se powder and melted, Cu, In, Ga and Se elements are alloyed.
  • this Cu—In—Ga alloy powder has the first region and the second region, the exothermic reaction of Se and In generated in the first region during alloying is It is diminished by the endothermic reaction of Se and Cu generated in the second region, and the heat generation of the entire system is suppressed. This prevents the molten metal from being scattered due to an explosive reaction, and makes it possible to produce a Cu—In—Ga—Sn alloy powder safely.
  • a method for producing a Cu—In—Ga—Se alloy powder produces a molten Cu—In—Ga alloy.
  • the Cu—In—Ga alloy ribbon is produced by solidifying the above-described molten Cu—In—Ga alloy by a strip casting method.
  • the Cu—In—Ga alloy powder is produced by pulverizing the Cu—In—Ga alloy ribbon.
  • the Cu—In—Ga alloy and Se mixed powder are produced by mixing the Cu—In—Ga alloy powder and the Se powder.
  • the Cu—In—Ga alloy and Se mixed powder are fired.
  • the molten metal is prevented from being scattered due to an explosive reaction caused by the exothermic reaction between molten Se and In, and Cu—In—Ga. -Se alloy powder can be produced.
  • a Cu—In—Ga—Se alloy sintered body manufacturing method produces a molten Cu—In—Ga alloy.
  • the Cu—In—Ga alloy ribbon is produced by solidifying the above-described molten Cu—In—Ga alloy by a strip casting method.
  • the Cu—In—Ga alloy powder is produced by pulverizing the Cu—In—Ga alloy ribbon.
  • the Cu—In—Ga alloy and Se mixed powder are produced by mixing the Cu—In—Ga alloy powder and the Se powder.
  • the Cu—In—Ga—Se alloy powder is produced by firing the Cu—In—Ga alloy and Se mixed powder.
  • the Cu—In—Ga—Se alloy powder is sintered.
  • the molten metal is prevented from being scattered due to an explosive reaction caused by the exothermic reaction between molten Se and In, and Cu—In—Ga. -Se alloy powder is produced.
  • Cu—In—Ga—Se alloy powder since the alloying of Se and In is already completed or almost completed, no explosive reaction due to the exothermic reaction of Se and In occurs. It is possible to produce a Cu—In—Ga—Se alloy sintered body.
  • the Cu—In—Ga—Se alloy sintered body is manufactured by sintering the Cu—In—Ga—Se alloy powder produced by sintering the Cu—In—Ga—Se alloy powder. You may further have the process processed into.
  • the Cu—In—Ga—Se alloy sintered body can be used as a sputtering target made of a Cu—In—Ga—Se alloy.
  • a Cu—In—Ga alloy powder for producing a Cu—In—Ga—Se alloy comprises a first region and a second region.
  • the first region contains In as a main component.
  • the second region is a grain having a particle size of 1 ⁇ m or less dispersed mainly in the Cu—Ga alloy and dispersed in the first region.
  • the Cu—In—Ga alloy powder When this Cu—In—Ga alloy powder is mixed with the Se powder and melted, Cu, In, Ga and Se elements are alloyed.
  • the Cu—In—Ga alloy powder has a first region mainly composed of In and a second region mainly composed of the Cu—Ga alloy dispersed in the first region. Yes.
  • the exothermic reaction of Se and In that occurs in the first region during alloying is reduced by the endothermic reaction of Se and Cu that occurs in the second region, so that the heat generation of the entire system is suppressed. This prevents the molten metal from being scattered due to an explosive reaction, and makes it possible to manufacture a Cu—In—Ga—Sn alloy safely.
  • a Cu—In—Ga—Se alloy powder includes a first region containing In as a main component and a first region containing a Cu—Ga alloy as a main component.
  • a Cu—In—Ga alloy powder having a second region having a particle diameter of 1 ⁇ m or less dispersed in the region, and a Se powder mixed with the Cu—In—Ga alloy powder are formed by firing.
  • This Cu-In-Ga-Se alloy powder is completely or almost completely alloyed with Se and contains, so it generates an explosive reaction due to the exothermic reaction of Se and In.
  • FIG. 1 is a flowchart showing a method for manufacturing a Cu—In—Ga—Se alloy target. Each step shown in FIG.
  • a Cu (copper) ingot, an In (indium) ingot, and a Ga (gallium) ingot are prepared.
  • the above ingots are dissolved and mixed (St101).
  • the ingot can be melted by a triarc furnace. Moreover, you may use the other heating means which can melt
  • the melted ingots can be mixed by an ordinary mixing means because the exothermic reaction due to the mixing of Cu, In and Ga does not matter. Thereby, a “Cu—In—Ga alloy melt” is formed.
  • FIG. 2 (a) is a photograph of a Cu—In—Ga alloy ingot formed by melting and mixing the above ingots.
  • FIG. 2B is a photograph of the cut surface of the Cu—In—Ga alloy ingot shown in FIG. Note that the Cu—In—Ga alloy ingots shown in these drawings are for explanation, and in this embodiment, the process proceeds to the next St102 in the state of the molten Cu—In—Ga alloy.
  • the Cu—In—Ga alloy melt formed in St101 is solidified by the “Strip-Cast method” (St102).
  • the strip cast method is one of the rapid casting methods of molten metal, and the outline will be described below.
  • FIG. 3 is a schematic diagram showing an aspect of the strip casting method.
  • the molten metal Y is supplied from the crucible 1 to the tundish 3 adjacent to the roll 2.
  • a slit-like nozzle is formed at the bottom of the tundish 3, and the molten metal Y is supplied from this nozzle to the peripheral surface of the roll 2.
  • the roll 2 is rotated at a predetermined speed, and the supplied molten metal Y is cooled and solidified on the surface of the roll 2, and a metal ribbon H is formed.
  • the roll 2 may be formed of a metal material having high thermal conductivity such as copper, and the inside may be cooled by cooling water or the like.
  • the thickness of the metal ribbon H can be controlled by the rotational speed of the roll 2, the distance between the tundish 3 and the roll 2, the size of the nozzle of the tundish 3, and the like.
  • this strip casting method is used to solidify the molten Cu—In—Ga alloy to produce a “Cu—In—Ga alloy ribbon”.
  • the rotation speed of the roll can be 1 m / sec. If the roll rotation speed is 0.5 m / sec, the formed Cu—In—Ga alloy ribbon is thick and strong enough not to be broken by hand. Therefore, the rotation speed is about 1 m / sec. Is preferred.
  • FIG. 4 shows a photograph of a Cu—In—Ga alloy ribbon formed with a roll rotation speed of 1 m / sec.
  • FIG. 5 is an SEM image obtained by imaging the fractured surface of the Cu—In—Ga alloy ribbon shown in FIG. 4 with a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the magnification of FIG. 5 (a) is 5000 times, and the magnification of FIG. 5 (b) is 20000 times.
  • the pattern appearing in a net shape in FIG. 5 is a brittle fracture line of the parent phase (In) generated on the cut surface of the sample.
  • the Cu—In—Ga alloy formed by the method of the present embodiment includes two regions indicated as regions R1 and R2, and the granular region R2 is dispersed in the massive region R1. Yes.
  • a lump-like area is referred to as a first area R1, and a granular area is referred to as a second area R2.
  • the main component of the first region R1 is In, and the main component of the second region R2 is a Cu—Ga alloy.
  • FIG. 6 is a graph showing the results of qualitative analysis of EDX (Energy Dispersive X-ray Spectroscopy) in the first region R1 and the second region R2.
  • the horizontal axis of the graph is the irradiation energy (keV) of the incident electron beam, and the vertical axis is the X-ray count (cps: count per second).
  • the literature value of the characteristic X-ray of each element is shown in the graph.
  • the first region R1 is mainly composed of In
  • the second region R2 is mainly composed of a Cu—Ga alloy. That is, this Cu—In—Ga alloy has a structure in which the granular second region R2 mainly containing the Cu—Ga alloy is dispersed in the first region R1 mainly containing In. Yes.
  • FIG. 7 is a graph showing the results of XRD (X-Ray Diffractometer) of the Cu—In—Ga alloy formed by the method of the present embodiment.
  • the horizontal axis of the graph is the X-ray incident angle (°), and the vertical axis is the diffraction intensity.
  • the literature value of pure Cu and pure In is shown on a graph. As shown in the figure, the peak identified in pure In is confirmed from this graph, and the peak identified in pure Cu is not confirmed. Therefore, it can be said that this Cu—In—Ga alloy contains pure In and alloyed Cu, which agrees with the result of the above EDX analysis.
  • the Cu—In—Ga alloy ribbon having the above structure is pulverized (St103). Since the Cu—In—Ga alloy ribbon is formed to a strength that can be broken by the above-described strip casting method, it can be pulverized by any means. After pulverization, classification is performed so that the particle size of the powder particles is 140 ⁇ m or less. Thereby, “Cu—In—Ga alloy powder” is produced.
  • the Cu—In—Ga alloy powder is mixed with Se (selenium) powder (St104).
  • the Se powder has an amount that is a material amount ratio of a Cu—In—Ga—Se alloy described later.
  • the Cu—In—Ga alloy and Se mixed powder are fired (St105). Firing is performed in an inert gas atmosphere such as Ar so that each element does not react with oxygen in the air.
  • the firing temperature is preferably 500 ° C. or higher, particularly 620 ° C.
  • the firing time can be set to a time during which firing proceeds sufficiently, for example, 12 hours.
  • FIG. 8 is a photograph of a Cu—In—Ga—Se alloy powder formed by firing a Cu—In—Ga alloy and Se mixed powder at 500 ° C. for 12 hours. As shown in the figure, there is no evidence of Se scattering during the firing due to an exothermic reaction.
  • the granular second region R2 mainly composed of Cu—Ga alloy is dispersed in the first region R1 mainly composed of In. That is, it is considered that the alloying reaction of Cu and Se contained in the second region R2 exhibits an endothermic reaction, and the heat generated by the exothermic reaction of In and Se is reduced.
  • the second region R2 since the second region R2 is dispersed in the first region R1, this heat reduction is particularly promoted, and the heat generation of the entire system is suppressed. .
  • FIG. 9 is a graph showing the results of TG (Thermogravimetric) / DTA (Differential Thermal Analysis) (thermogravimetric differential thermal analysis) of Cu—In—Ga alloy and Se mixed powder.
  • FIG. 10 is a graph showing the TG / DTA results of the In and Se mixed powders shown as a comparison. In both figures, the horizontal axis of the graph is the sample temperature (° C.), the vertical axis is the change in weight of the sample (%) for TG (right scale), and the temperature difference between the reference and the sample for DTA (electromotive force ( ⁇ V) of the thermocouple) ) (Left scale).
  • FIG. 11 shows the XRD results of the Cu—In—Ga alloy and Se mixed powder before firing (hereinafter referred to as a sample before firing) and the Cu—In—Ga—Se alloy powder after firing (hereinafter referred to as a sample after firing). It is a graph.
  • the graph shows literature values of Cu—In—Ga—Se alloy (CuIn 0.8 Ga 0.2 Se 2 ), Se and In.
  • the firing conditions are a temperature of 620 ° C. and 12 hours.
  • FIG. 12 shows XRD results of samples after firing that were fired at firing temperatures of 500 ° C. and 620 ° C. for 12 hours, respectively.
  • the graph shows literature values of a Cu—In—Ga—Se alloy (CuIn 0.8 Ga 0.2 Se 2 ).
  • the sample after firing at 620 ° C. has a sharper peak than the sample after firing at 500 ° C. That is, it can be seen that the CIGS phase becomes more single phase when the firing temperature is set to 620 ° C.
  • FIG. 13A is a sample before baking
  • FIG. 13B is a sample after baking for 12 hours at 500 ° C.
  • FIG. 13C is an SEM image (magnification of 3000) of the sample after baking for 12 hours at 620 ° C. Times).
  • the SEM image shown in FIG. 13A shows a state in which finer Se particles having a particle size of about 1 ⁇ m are attached to Cu—In—Ga alloy particles having a particle size of about 100 ⁇ m.
  • the Cu—In—Ga—Se alloy is somewhat melted, and Se particles are taken into the Cu—In—Ga—Se alloy. It is in the state.
  • a Cu—In—Ga—Se alloy powder produced by firing is sintered to produce a Cu—In—Ga—Se alloy sintered body (St106).
  • Sintering can be performed by a method such as a spark plasma sintering (SPS) method or a hot press (HP) method.
  • SPS spark plasma sintering
  • HP hot press
  • the Cu—In—Ga—Se alloy sintered body is processed to produce a Cu—In—Ga—Se alloy target (St107).
  • This processing can be performed by any method such as cutting and grinding.
  • a Cu—In—Ga—Se alloy target can be manufactured using a single metal of Cu, In, Ga, and Se as a raw material.
  • a Cu—In—Ga alloy powder having the second region R2 is manufactured.
  • the exothermic reaction of Se and In generated in the first region R1 is the endothermic reaction of Se and Cu generated in the second region R2.
  • the present invention is not limited to the above-described embodiment, and can be modified within the scope not departing from the gist of the present invention.
  • Cu, In, Ga and Se are alloyed, but other elements may be further added. Even in this case, the exothermic reaction of Se and In is attenuated by the endothermic reaction of Cu and In, and the explosive reaction can be suppressed.
  • a Cu—In—Ga—Sn alloy target is shown as an example of a Cu—In—Ga—Sn alloy sintered body.
  • the Cu—In—Ga—Sn alloy sintered body is not limited to the sputtering target, and can be used for other purposes.

Abstract

L'invention concerne un procédé pour la production d'une poudre d'alliage de Cu-In-Ga, le procédé comprenant la production d'une fusion d'un alliage de Cu-In-Ga, la solidification de la fusion grâce à un procédé de coulée en bande pour produire un ruban d'alliage de Cu-In-Ga, et la pulvérisation du ruban d'alliage. Grâce au présent procédé, il est possible de produire une poudre d'un alliage de Cu-In-Ga comprenant une première région qui comprend de l'In comme constituant principal et une seconde région qui est granuleuse, qui comprend un alliage de Cu-Ga comme constituant principal, et qui a été dispersée dans la première région. Lorsque la poudre d'alliage de Cu-In-Ga est mélangée et alliée à une poudre de Se, l'influence de la réaction exothermique de Se et In qui se produit dans la première région est atténuée par la réaction endothermique de Se et Cu qui se produit dans la seconde région. Ainsi, la diffusion de la fusion provoquée par une réaction explosive est empêchée, et il devient possible de produire une poudre d'alliage de Cu-In-Ga-Sn en toute sécurité.
PCT/JP2011/002813 2010-05-24 2011-05-20 Procédé pour la production d'une poudre d'alliage de cu-in-ga, procédé pour la production d'une poudre d'alliage de cu-in-ga-se, procédé pour la production d'un alliage de cu-in-ga-se fritté, poudre d'alliage de cu-in-ga, et poudre d'alliage de cu-in-ga-se WO2011148600A1 (fr)

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JP2012517125A JP5521036B2 (ja) 2010-05-24 2011-05-20 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末

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JP2012001803A (ja) * 2010-06-21 2012-01-05 Ulvac Japan Ltd Ｉｎ−Ｓｅ合金粉末、Ｉｎ−Ｓｅ合金焼結体、Ｇａ−Ｓｅ合金粉末、Ｇａ−Ｓｅ合金焼結体、Ｉｎ−Ｇａ−Ｓｅ合金粉末、Ｉｎ−Ｇａ−Ｓｅ合金焼結体、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法
JP2012117106A (ja) * 2010-11-30 2012-06-21 Mitsubishi Materials Corp スパッタリングターゲット及びその製造方法
WO2013129044A1 (fr) * 2012-02-27 2013-09-06 株式会社日本マイクロニクス Procédé de fabrication d'alliage pour cellule solaire à base de cigs
WO2013172253A1 (fr) * 2012-05-15 2013-11-21 株式会社日本マイクロニクス ALLIAGE DE COUCHE ABSORBANT LA LUMIÈRE DE TYPE n, PROCÉDÉ PERMETTANT DE PRODUIRE CE DERNIER ET CELLULE SOLAIRE
WO2013172252A1 (fr) * 2012-05-15 2013-11-21 株式会社 日本マイクロニクス ALLIAGE POUR UNE COUCHE ABSORBANT LA LUMIÈRE AJOUTÉE AU SODIUM (Na), PROCÉDÉ PERMETTANT DE PRODUIRE CE DERNIER ET CELLULE SOLAIRE
WO2013183790A1 (fr) * 2012-06-08 2013-12-12 株式会社フューテックファーネス Procédé de fabrication d'une cible de pulvérisation cathodique de cigs
KR101483254B1 (ko) 2013-07-15 2015-01-15 한국생산기술연구원 스퍼터링 타겟용 4성분계 셀렌화합물 소결체 및 그 제조방법
JP2015508375A (ja) * 2011-12-15 2015-03-19 ミッドサマー・アーベー 銅インジウムガリウムジセレニドのリサイクル
EP2589571A4 (fr) * 2010-06-29 2015-07-15 Kobelco Res Inst Inc Poudre, corps fritté et cible de pulvérisation contenant chacun des éléments cu, in, ga et se, et procédé de production de ladite poudre

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US9334559B2 (en) 2010-06-29 2016-05-10 Kobelco Research Institute, Inc. Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
EP2589571A4 (fr) * 2010-06-29 2015-07-15 Kobelco Res Inst Inc Poudre, corps fritté et cible de pulvérisation contenant chacun des éléments cu, in, ga et se, et procédé de production de ladite poudre
JP2012117106A (ja) * 2010-11-30 2012-06-21 Mitsubishi Materials Corp スパッタリングターゲット及びその製造方法
JP2015508375A (ja) * 2011-12-15 2015-03-19 ミッドサマー・アーベー 銅インジウムガリウムジセレニドのリサイクル
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JPWO2013172252A1 (ja) * 2012-05-15 2016-01-12 株式会社日本マイクロニクス Ｎａ添加光吸収層用合金とその製造方法及び太陽電池
JPWO2013172253A1 (ja) * 2012-05-15 2016-01-12 株式会社日本マイクロニクス ｎ型光吸収層用合金とその製造方法及び太陽電池
WO2013172252A1 (fr) * 2012-05-15 2013-11-21 株式会社 日本マイクロニクス ALLIAGE POUR UNE COUCHE ABSORBANT LA LUMIÈRE AJOUTÉE AU SODIUM (Na), PROCÉDÉ PERMETTANT DE PRODUIRE CE DERNIER ET CELLULE SOLAIRE
WO2013183790A1 (fr) * 2012-06-08 2013-12-12 株式会社フューテックファーネス Procédé de fabrication d'une cible de pulvérisation cathodique de cigs
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