JP5521036B2 - Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末 - Google Patents

Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末

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Publication number
JP5521036B2
JP5521036B2 JP2012517125A JP2012517125A JP5521036B2 JP 5521036 B2 JP5521036 B2 JP 5521036B2 JP 2012517125 A JP2012517125 A JP 2012517125A JP 2012517125 A JP2012517125 A JP 2012517125A JP 5521036 B2 JP5521036 B2 JP 5521036B2
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JP
Japan
Prior art keywords
alloy
powder
mixed
region
alloy powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012517125A
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English (en)
Japanese (ja)
Other versions
JPWO2011148600A1 (ja
Inventor
泰彦 赤松
洋一 広瀬
貴継 萩埜
康雄 美原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2012517125A priority Critical patent/JP5521036B2/ja
Publication of JPWO2011148600A1 publication Critical patent/JPWO2011148600A1/ja
Application granted granted Critical
Publication of JP5521036B2 publication Critical patent/JP5521036B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
JP2012517125A 2010-05-24 2011-05-20 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末 Expired - Fee Related JP5521036B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012517125A JP5521036B2 (ja) 2010-05-24 2011-05-20 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010118679 2010-05-24
JP2010118679 2010-05-24
PCT/JP2011/002813 WO2011148600A1 (fr) 2010-05-24 2011-05-20 Procédé pour la production d'une poudre d'alliage de cu-in-ga, procédé pour la production d'une poudre d'alliage de cu-in-ga-se, procédé pour la production d'un alliage de cu-in-ga-se fritté, poudre d'alliage de cu-in-ga, et poudre d'alliage de cu-in-ga-se
JP2012517125A JP5521036B2 (ja) 2010-05-24 2011-05-20 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末

Publications (2)

Publication Number Publication Date
JPWO2011148600A1 JPWO2011148600A1 (ja) 2013-07-25
JP5521036B2 true JP5521036B2 (ja) 2014-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012517125A Expired - Fee Related JP5521036B2 (ja) 2010-05-24 2011-05-20 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末の製造方法、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末

Country Status (3)

Country Link
JP (1) JP5521036B2 (fr)
TW (1) TW201200270A (fr)
WO (1) WO2011148600A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5588757B2 (ja) * 2010-06-21 2014-09-10 株式会社アルバック Ｉｎ−Ｓｅ合金粉末、Ｉｎ−Ｓｅ合金焼結体、Ｇａ−Ｓｅ合金粉末、Ｇａ−Ｓｅ合金焼結体、Ｉｎ−Ｇａ−Ｓｅ合金粉末、Ｉｎ−Ｇａ−Ｓｅ合金焼結体、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法
JP5767447B2 (ja) * 2010-06-29 2015-08-19 株式会社コベルコ科研 Ｃｕ、Ｉｎ、ＧａおよびＳｅの元素を含有する粉末の製造方法、及びＣｕ、Ｉｎ、ＧａおよびＳｅの元素を含有するスパッタリングターゲット
JP5533607B2 (ja) * 2010-11-30 2014-06-25 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2013089630A1 (fr) * 2011-12-15 2013-06-20 Midsummer Ab Recyclage de diséléniure de cuivre, d'indium et de gallium
WO2013129044A1 (fr) * 2012-02-27 2013-09-06 株式会社日本マイクロニクス Procédé de fabrication d'alliage pour cellule solaire à base de cigs
JP5993945B2 (ja) * 2012-05-15 2016-09-21 株式会社日本マイクロニクス ｎ型光吸収層用合金とその製造方法及び太陽電池
WO2013172252A1 (fr) * 2012-05-15 2013-11-21 株式会社 日本マイクロニクス ALLIAGE POUR UNE COUCHE ABSORBANT LA LUMIÈRE AJOUTÉE AU SODIUM (Na), PROCÉDÉ PERMETTANT DE PRODUIRE CE DERNIER ET CELLULE SOLAIRE
JP2013253308A (ja) * 2012-06-08 2013-12-19 Futek Furnace Inc Ｃｉｇｓスパッタリングターゲットの製造方法
KR101483254B1 (ko) 2013-07-15 2015-01-15 한국생산기술연구원 스퍼터링 타겟용 4성분계 셀렌화합물 소결체 및 그 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009120862A (ja) * 2007-11-12 2009-06-04 Mitsubishi Materials Corp Ｃｕ−Ｉｎ−Ｇａ三元系焼結合金スパッタリングターゲットおよびその製造方法
JP2009287092A (ja) * 2008-05-30 2009-12-10 Mitsubishi Materials Corp カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009120862A (ja) * 2007-11-12 2009-06-04 Mitsubishi Materials Corp Ｃｕ−Ｉｎ−Ｇａ三元系焼結合金スパッタリングターゲットおよびその製造方法
JP2009287092A (ja) * 2008-05-30 2009-12-10 Mitsubishi Materials Corp カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
TW201200270A (en) 2012-01-01
JPWO2011148600A1 (ja) 2013-07-25
WO2011148600A1 (fr) 2011-12-01

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