Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
  • H01L23/293—Organic, e.g. plastic
  • H01L23/295—Organic, e.g. plastic containing a filler
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  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J7/00—Adhesives in the form of films or foils
  • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
  • C09J7/22—Plastics; Metallised plastics
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
  • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
  • H01L21/568—Temporary substrate used as encapsulation process aid
• • H—ELECTRICITY
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
  • H01L23/293—Organic, e.g. plastic
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
  • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
  • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
  • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
  • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
  • H01L23/3157—Partial encapsulation or coating
  • H01L23/3164—Partial encapsulation or coating the coating being a foil
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01012—Magnesium [Mg]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01019—Potassium [K]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/35—Mechanical effects
  • H01L2924/351—Thermal stress
  • H01L2924/3512—Cracking
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31511—Of epoxy ether

Definitions

• the present invention relates to a resin film forming sheet for a chip that can efficiently form a resin film having a gettering effect on the back surface of a semiconductor chip and can improve the manufacturing efficiency of the chip.
• the present invention relates to a resin film forming sheet for a chip used for manufacturing a semiconductor chip mounted by a so-called face-down method.
• this invention relates to the manufacturing method of the semiconductor chip using the said resin film formation sheet for chips.
• the crushed layer is a fine unevenness on the ground wafer surface, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects. Due to stress due to surface irregularities and composition changes, even a slight impact may cause cracking and damage of the wafer. For this reason, after the back surface grinding is finished, chemical etching or plasma etching is generally performed on the back surface in order to remove the crushed layer. By removing the crushed layer, the strength of the wafer is improved, and good handling is maintained even for a wafer that has been ground to an extremely thin thickness.
• the semiconductor wafer comes into contact with various members during circuit formation, back surface grinding, and mounting. At this time, a metal such as copper is released from these other members, and the wafer may be subjected to metal contamination. Impurity metals accumulate in the wafer, and may ionize and move within the wafer under heating conditions such as reflow. And the metal ion which reached
• the crushed layer is a fine unevenness, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects, these compositions, Due to the non-uniformity of the structure, it is considered that the above-described impurity metals can be easily captured and the effect of reducing metal contamination can be obtained.
• a function of the crushed layer is also called a gettering function.
• Patent Documents 1 and 2 propose techniques for providing a gettering function by performing various processes on the semiconductor wafer and chips after removing the crushed layer.
• the present invention has been made in view of the above circumstances, and a gettering function is provided for a semiconductor device obtained without subjecting a semiconductor wafer or chip to a special process that increases the number of steps and complicates the process.
• the purpose is to grant.
• the present inventors have conceived that a gettering site can be introduced into a semiconductor device by providing a gettering function to the resin film formed on the back surface of the semiconductor chip. As a result, the present invention has been completed.
• the present invention includes the following gist. (1) having a release sheet and a resin film forming layer formed on the release surface of the release sheet; A resin film-forming sheet for chips, wherein the resin film-forming layer contains a binder polymer component (A), a curable component (B), and a gettering agent (C).
• a resin film-forming sheet for chips wherein the resin film-forming layer contains a binder polymer component (A), a curable component (B), and a gettering agent (C).
• the gettering agent (C) is selected from the group consisting of a heavy metal deactivator (C1), an organic chelating agent (C2), and a copper ion-trapping metal compound (C3).
• the resin film-forming layer of the protective film-forming sheet for chips according to any one of (1) to (6) is attached to the back surface of the semiconductor wafer having a circuit formed on the front surface, and the resin film is attached to the back surface.
• a method for producing a semiconductor chip comprising: obtaining a semiconductor chip having the semiconductor chip.
• Step (1) peeling the resin film forming layer and the release sheet
• Step (2) curing the resin film forming layer
• Step (3) Dicing the semiconductor wafer and the resin film forming layer.
• the gettering site can be added to the obtained semiconductor device by using the resin film forming sheet for chip according to the present invention without performing any special treatment on the semiconductor wafer or chip. It becomes possible to introduce.
• the resin film forming sheet for chips according to the present invention includes a release sheet and a resin film forming layer formed on the release surface of the release sheet.
• the resin film forming layer includes a binder polymer component (A), a curable component (B), and a gettering agent (C).
• Binder polymer component The binder polymer component (A) is used for imparting sufficient adhesion and film forming property (sheet processability) to the resin film-forming layer.
• the binder polymer component (A) conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers, and the like can be used.
• the weight average molecular weight (Mw) of the binder polymer component (A) is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. If the weight average molecular weight of the binder polymer component (A) is too low, the adhesive force between the resin film forming layer and the release sheet increases, and transfer failure of the resin film forming layer may occur. Adhesiveness may decrease and transfer to a chip or the like may not be possible, or the resin film may peel from the chip or the like after transfer.
• the glass transition temperature (Tg) of the acrylic polymer is preferably in the range of ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., and particularly preferably ⁇ 40 to 30 ° C. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the resin film forming layer and the release sheet may increase, resulting in poor transfer of the resin film forming layer, and if too high, the adhesion of the resin film forming layer will be reduced. However, the transfer to the chip or the like may be impossible, or the resin film may be peeled off from the chip or the like after the transfer.
• the monomer constituting the acrylic polymer includes a (meth) acrylic acid ester monomer or a derivative thereof.
• an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) (Meth) acrylates having a cyclic skeleton such as cycloalkyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) Acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate, etc .; hydroxymethyl (meth) acrylate having a hydroxyl group, 2-hydroxy
• polymerizing the monomer which has a hydroxyl group has preferable compatibility with the sclerosing
• the acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, or the like.
• thermosetting component A thermosetting component and a thermosetting agent are used for the curable component (B).
• thermosetting component for example, an epoxy resin is preferable.
• epoxy resin a conventionally known epoxy resin can be used.
• epoxy resins include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, and bisphenols.
• epoxy compounds having two or more functional groups in the molecule such as A-type epoxy resin, bisphenol F-type epoxy resin, and phenylene skeleton-type epoxy resin. These can be used individually by 1 type or in combination of 2 or more types.
• the resin film-forming layer preferably contains 1 to 1500 parts by weight, more preferably 3 to 1200 parts by weight of the thermosetting component with respect to 100 parts by weight of the binder polymer component (A). If the content of the thermosetting component is less than 1 part by weight, sufficient adhesiveness may not be obtained, and if it exceeds 1500 parts by weight, the release force between the resin film-forming layer and the release sheet increases, and the resin film A transfer defect of the formation layer may occur.
• thermosetting agent functions as a curing agent for thermosetting components, particularly epoxy resins.
• a preferable thermosetting agent includes a compound having two or more functional groups capable of reacting with an epoxy group in one molecule.
• the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an acid anhydride.
• phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable. More preferably, a phenolic hydroxyl group and an amino group are mentioned.
• phenolic curing agent examples include polyfunctional phenolic resins, biphenols, novolac type phenolic resins, dicyclopentadiene type phenolic resins, zylock type phenolic resins, and aralkylphenolic resins.
• amine curing agent is DICY (dicyandiamide). These can be used individually by 1 type or in mixture of 2 or more types.
• the content of the thermosetting agent is preferably 0.1 to 500 parts by weight, and more preferably 1 to 200 parts by weight with respect to 100 parts by weight of the thermosetting component.
• the content of the thermosetting agent is small, the adhesiveness may not be obtained due to insufficient curing, and when it is excessive, the moisture absorption rate of the resin film forming layer is increased and the reliability of the semiconductor device may be lowered.
• the gettering agent (C) is not particularly limited as long as it has an action of capturing metal ions such as copper ions, but is preferably a heavy metal deactivator (C1) or an organic chelating agent (C2). And at least one selected from the group consisting of a copper ion-trapping metal compound (C3).
• a heavy metal deactivator is an additive blended in a small amount with various plastics in order to prevent the plastic from being deteriorated by a metal such as a catalyst residue.
• the heavy metal deactivator is considered to capture the metal component to reduce its action and prevent the deterioration of the plastic.
• various inorganic or organic deactivators are known.
• the organic heavy metal deactivator is excellent in dispersibility in the resin film forming layer.
• a heavy metal deactivator a compound having the following structure in a part of the molecule is preferably used.
• R is hydrogen or a hydrocarbon skeleton that may contain a hetero atom, and particularly preferably a hydrocarbon skeleton that contains a nitrogen atom and / or an oxygen atom.
• heavy metal deactivators include the following compounds. 3- (N-salicyloyl) amino-1,2,4-triazole (made by ADEKA, CDA-1, CAS No. 36411-52-6) Decamethylenedicarboxydisalicyloylhydrazide (ADEKA, CDA-6, CAS No.63245-38-5)
• the organic chelating agent (C2) is not particularly limited, but has a polyvalent carboxylic acid as a functional group, and preferably has an acid value of 100 to 600 mg / g, and 260 to 330 mg / g. It is more preferable that If the acid value of the organic chelating agent (C2) is smaller than 100 mg / g, the target gettering function is insufficient, and if it is larger than 600 mg / g, it may cause an interaction with the base thermosetting agent. .
• the mass decrease start temperature of the organic chelating agent (C2) by differential scanning calorimetry (TG / DTA) is preferably 190 ° C. or higher, more preferably 196 ° C. or higher.
• the mass reduction start temperature by differential scanning calorimetry (TG / DTA) of the organic chelating agent (C2) is lower than 190 ° C., the IR reflow resistance of the semiconductor device may be lowered.
• the copper ion capturing metal compound (C3) has an effect of capturing copper ions.
• examples thereof include oxides such as antimony, bismuth, magnesium and aluminum, hydroxides, nitrates and carbonates. These are preferable in that the effect can be obtained with a small amount.
• examples thereof preferably include antimony oxide, bismuth oxide, and a mixture thereof, and hydrotalcite that is a magnesium-aluminum oxide and a fired product thereof. Al in the hydrotalcite may be substituted with Cr or Fe.
• the gettering agent (C) can be used singly or in combination of two or more.
• the blending amount of the gettering agent (C) is preferably 1 to 35 parts by weight, more preferably 10 to 35 parts by weight, particularly preferably 100 parts by weight of the total solid content constituting the resin film forming layer. 20 to 30 parts by weight.
• the amount of the gettering agent (C) is too small, the target gettering function is insufficient, and when the amount is too large, the adhesion performance may be impaired.
• Such a gettering agent (C) can be introduced into the semiconductor device by blending it into the resin film of the semiconductor chip. For this reason, the impurity metal accumulated in the wafer is captured by the gettering agent (C) in the resin film even if it moves under heating conditions such as reflow, so that migration occurs on the circuit surface. None happen.
• the gettering function of the gettering agent (C) can be evaluated by, for example, the following copper ion adsorption ability.
• Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
• the copper ion adsorption capacity indicates the ratio of the amount of copper ions trapped (adsorbed or absorbed) by the gettering agent, and the higher the copper ion adsorption capacity, the higher the gettering function.
• the copper ion adsorption ability of the gettering agent (C) used in the present invention is preferably 30% or more, more preferably 50% or more, and particularly preferably 95% or more.
• the gettering function can also be evaluated by the amount of copper ions adsorbed per unit weight of the gettering agent (hereinafter referred to as “copper ion adsorption rate”). Specifically, a gettering agent is added to a copper ion aqueous solution in the same manner as described above, and the copper ion adsorption rate is obtained by the following formula.
• Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
• the copper ion adsorption rate of the gettering agent (C) used in the present invention is preferably 0.003% or more, more preferably 0.01% or more, and particularly preferably 0.013% or more.
• the gettering agent (C) generally has a larger surface area per weight as the particle size is smaller, so that it becomes easier to capture impurity metals and the gettering function is enhanced.
• the smaller the particle size the easier the thin adhesive processing. Therefore, the average particle diameter of the gettering agent (C) used in the present invention is preferably in the range of 1 nm to 30 ⁇ m, more preferably 5 nm to 10 ⁇ m, and particularly preferably 10 nm to 1 ⁇ m.
• the particle size is large in the raw material state, it is pulverized by an appropriate method (ball mill, three rolls, etc.) in advance or when mixed with other components.
• the average particle diameter of the gettering agent (C) was obtained as an arithmetic average from 100 particles by observation with a scanning electron microscope (SEM). When the particle shape was not spherical, the longest diameter was taken as the particle size.
• Colorant Colorant (D) can be mix
• organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties. Examples of the black pigment include carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like, but are not limited thereto. Carbon black is particularly preferable from the viewpoint of increasing the reliability of the semiconductor device.
• the blending amount of the colorant (D) is preferably 0.1 to 35 parts by weight, more preferably 0.5 to 25 parts by weight, particularly preferably 100 parts by weight of the total solid content constituting the resin film forming layer. Is 1 to 15 parts by weight.
• the resin film forming layer can contain the following components in addition to the binder polymer component (A), the curable component (B), the gettering agent (C), and the colorant (D).
• the curing accelerator (E) is used to adjust the curing speed of the resin film forming layer.
• the curing accelerator (E) is particularly preferably used when the epoxy resin and the thermosetting agent are used in combination in the curable component (B).
• Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole; Organic phosphines such as tributylphosphine, diphenylphosphine and triphenylphosphine; And tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate. These can be used individually by 1 type or in mixture of 2 or more types.
• the curing accelerator (E) is contained in an amount of preferably 0.01 to 10 parts by weight, more preferably 0.1 to 1 part by weight with respect to 100 parts by weight of the curable component (B). By containing the curing accelerator (E) in an amount within the above range, it has excellent adhesive properties even when exposed to high temperatures and high humidity, and high reliability even when exposed to severe reflow conditions. Can be achieved. If the content of the curing accelerator (E) is low, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator having a high polarity will adhere to the resin film forming layer at high temperature and high humidity. The reliability of the semiconductor device is lowered by moving to the side and segregating.
• the coupling agent (F) may be used to improve the adhesion and adhesion of the resin film forming layer to the chip. Moreover, the water resistance can be improved by using a coupling agent (F), without impairing the heat resistance of the resin film obtained by hardening
• the coupling agent (F) a compound having a group that reacts with a functional group of the binder polymer component (A), the curable component (B), or the like is preferably used.
• a silane coupling agent is desirable.
• Such coupling agents include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ - (methacryloxypropyl).
• the coupling agent (F) is usually 0.1 to 20 parts by weight, preferably 0.2 to 10 parts by weight, based on 100 parts by weight of the total of the binder polymer component (A) and the curable component (B). Preferably, it is contained at a ratio of 0.3 to 5 parts by weight. If the content of the coupling agent (F) is less than 0.1 parts by weight, the above effect may not be obtained, and if it exceeds 20 parts by weight, it may cause outgassing.
• Preferred inorganic fillers include powders such as silica, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride, beads formed by spheroidizing them, single crystal fibers, and glass fibers.
• silica filler is preferable.
• the said inorganic filler (G) can be used individually or in mixture of 2 or more types.
• the content of the inorganic filler (G) can be adjusted in the range of usually 1 to 80 parts by weight with respect to 100 parts by weight of the total solid content constituting the resin film forming layer.
• an energy ray polymerizable compound may be blended.
• the energy ray polymerizable compound (H) contains an energy ray polymerizable group and is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams.
• energy beam polymerizable compounds (H) include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, or 1,4.
• acrylate compounds such as butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate and itaconic acid oligomer.
• a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000.
• the amount of the energy beam polymerizable compound (H) is not particularly limited, but it is preferably used at a ratio of about 1 to 50 parts by weight with respect to 100 parts by weight of the total solid content constituting the resin film forming layer.
• the resin film-forming layer contains the above-mentioned energy beam polymerizable compound (H)
• the energy beam polymerizable compound is irradiated by irradiating energy rays such as ultraviolet rays when used. Harden.
• the photopolymerization initiator (I) in the composition by including the photopolymerization initiator (I) in the composition, the polymerization curing time and the light irradiation amount can be reduced.
• photopolymerization initiator (I) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal.
• a photoinitiator (I) can be used individually by 1 type or in combination of 2 or more types.
• the blending ratio of the photopolymerization initiator (I) is preferably 0.1 to 10 parts by weight and more preferably 1 to 5 parts by weight with respect to 100 parts by weight of the energy beam polymerizable compound (H). . If it is less than 0.1 part by weight, satisfactory transferability may not be obtained due to insufficient photopolymerization. If it exceeds 10 parts by weight, a residue that does not contribute to photopolymerization is generated, and the curability of the resin film forming layer May be insufficient.
• thermoplastic resin You may mix
• a thermoplastic resin (J) is mix
• the thermoplastic resin (J) preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000.
• the glass transition temperature of the thermoplastic resin (J) is preferably in the range of ⁇ 30 to 150 ° C., more preferably in the range of ⁇ 20 to 120 ° C. If the glass transition temperature of the thermoplastic resin (J) is too low, the peeling force between the resin film-forming layer and the release sheet may increase and transfer failure of the resin film-forming layer may occur. There is a possibility that the adhesive force with the chip is insufficient.
• thermoplastic resin (J) examples include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, and polystyrene. These can be used individually by 1 type or in mixture of 2 or more types.
• thermoplastic resin (J) is usually contained in an amount of 1 to 300 parts by weight, preferably 1 to 100 parts by weight, based on 100 parts by weight of the total of the binder polymer component (A) and the curable component (B). When the content of the thermoplastic resin (J) is within this range, the above effect can be obtained.
• crosslinking agent A crosslinking agent may be added to adjust the initial adhesive force and cohesive strength of the resin film-forming layer.
• examples of the crosslinking agent (K) include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.
• organic polyvalent isocyanate compound examples include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimers of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds. And a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound with a polyol compound.
• organic polyvalent isocyanate compounds include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, and diphenylmethane.
• organic polyvalent imine compound examples include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri- ⁇ -aziridinylpropionate, tetramethylolmethane-tri - ⁇ -aziridinylpropionate and N, N′-toluene-2,4-bis (1-aziridinecarboxamide) triethylenemelamine can be mentioned.
• the crosslinking agent (K) is usually 0.01 to 20 parts by weight, preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight, based on 100 parts by weight of the binder polymer component (A). Used.
• additives may be blended in the resin film forming layer as necessary.
• additives include plasticizers, antistatic agents, and antioxidants.
• the resin film forming layer composed of each component as described above has adhesiveness and heat-curing property, and can be easily bonded by pressing to a semiconductor wafer, a chip or the like in an uncured state. Finally, a resin film having high impact resistance can be provided through thermosetting, excellent in adhesive strength, and can maintain a sufficient protective function even under severe high temperature and high humidity conditions.
• the resin film forming layer may have a single layer structure, or may have a multilayer structure as long as one or more layers containing the above components are included. Furthermore, the resin film forming layer may have a concentration gradient of the gettering agent (C) in the thickness direction.
• the resin film-forming layer is obtained by applying and drying a composition for a resin film-forming layer obtained by mixing each of the above components in an appropriate solvent on a release sheet.
• the composition for resin film formation layers may be apply
• the resin film-forming sheet for chips according to the present invention is formed by releasably forming the resin film-forming layer on a release sheet.
• the shape of the resin film forming sheet for chips according to the present invention can take any shape such as a tape shape and a label shape.
• the release sheet for example, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, Polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film, fluorine A transparent film such as a resin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Moreover, the film which colored these, an opaque film, etc. can be used.
• the release sheet is peeled off when used, and the resin film forming layer is transferred to a semiconductor wafer or chip.
• the release sheet needs to withstand the heat during the heat-curing of the resin film-forming layer. Therefore, the polyethylene terephthalate film and the polyethylene naphthalate having excellent heat resistance A film, a polymethylpentene film, and a polyimide film are preferably used.
• the surface tension of the release sheet is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. .
• the lower limit is usually about 25 mN / m.
• alkyd, silicone, fluorine, unsaturated polyester, polyolefin, wax, and the like are used as the release agent used for the release treatment.
• alkyd, silicone, and fluorine release agents are heat resistant. This is preferable.
• the release agent is applied as it is without a solvent, or diluted or emulsified with a solvent, and applied with a gravure coater, Mayer bar coater, air knife coater, roll coater, etc.
• the laminate may be formed by normal temperature or heating or electron beam curing, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, or the like.
• the thickness of the release sheet is usually 10 to 500 ⁇ m, preferably 15 to 300 ⁇ m, particularly preferably about 20 to 250 ⁇ m.
• the thickness of the resin film forming layer is usually 1 to 500 ⁇ m, preferably 5 to 300 ⁇ m, and particularly preferably about 10 to 150 ⁇ m.
• a light peelable release film is laminated on the upper surface of the resin film forming layer separately from the release sheet before using the chip resin film forming sheet. May be.
• a method for manufacturing a semiconductor chip according to the present invention comprises attaching a resin film forming layer of the above-mentioned resin film forming sheet for a chip to a back surface of a semiconductor wafer having a circuit formed on the surface, and having a resin film on the back surface. It is characterized by obtaining.
• the resin film is preferably a protective film for a semiconductor chip.
• the semiconductor chip manufacturing method according to the present invention preferably further includes the following steps (1) to (3), wherein the steps (1) to (3) are performed in an arbitrary order. Step (1): peeling the resin film forming layer and the release sheet, Step (2): curing the resin film forming layer, Step (3): Dicing the semiconductor wafer and the resin film forming layer.
• the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. Next, the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground.
• the grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. At the time of back surface grinding, an adhesive sheet called a surface protection sheet is attached to the circuit surface in order to protect the circuit on the surface.
• the circuit surface side (that is, the surface protection sheet side) of the wafer is fixed by a chuck table or the like, and the back surface side on which no circuit is formed is ground by a grinder.
• the thickness of the wafer after grinding is not particularly limited, but is usually about 20 to 500 ⁇ m.
• the method for manufacturing a semiconductor chip of the present invention can be suitably applied particularly to a semiconductor wafer from which a crushed layer has been removed. That is, the semiconductor chip manufacturing method of the present invention can be suitably applied to a semiconductor wafer in which the thickness of the crush layer is 50 nm or less, further 30 nm or less, and particularly 10 nm or less.
• steps (1) to (3) are performed in an arbitrary order. Details of this process are described in detail in JP-A-2002-280329. As an example, the case where it performs in order of process (1), (2), (3) is demonstrated.
• the resin film forming layer of the above-mentioned resin film forming sheet for chips is attached to the back surface of a semiconductor wafer having a circuit formed on the front surface.
• the release sheet is peeled from the resin film forming layer to obtain a laminate of the semiconductor wafer and the resin film forming layer.
• the resin film forming layer is cured to form a resin film on the entire surface of the wafer. Since the resin film forming layer contains the curable component (B), the resin film forming layer is generally cured by thermosetting.
• the energy ray polymerizable compound (H) is blended in the resin film forming layer, the resin film forming layer can be cured by both heating and energy ray irradiation.
• the curing by may be performed simultaneously or sequentially.
• a resin film made of a cured resin is formed on the backside of the wafer, and the strength is improved compared to the case of a single wafer. Therefore, damage to the thinned wafer during handling can be reduced, and gettering contained in the resin film A gettering function is imparted by the agent (C). Further, compared with a coating method in which a coating solution for a resin film is directly applied to the back surface of a wafer or chip, the thickness of the resin film is excellent.
• the laminated body of the semiconductor wafer and the resin film is diced for each circuit formed on the wafer surface. Dicing is performed so as to cut both the wafer and the resin film.
• the wafer is diced by a conventional method using a dicing sheet. As a result, a semiconductor chip having a resin film on the back surface is obtained.
• the semiconductor chip by picking up the diced chip by a general means such as a collet, a semiconductor chip having a resin film on the back surface can be obtained.
• a highly uniform resin film can be easily formed on the back surface of the chip, and cracks after the dicing process and packaging are less likely to occur.
• the semiconductor device can be manufactured by mounting the semiconductor chip on a predetermined base by the face-down method.
• a semiconductor device can be manufactured by bonding a semiconductor chip having a resin film on the back surface to another member (on a chip mounting portion) such as a die pad portion or another semiconductor chip.
• Copper ion prepared by dissolving 0.805 g of copper (II) chloride dihydrate manufactured by Kanto Chemical Co., Ltd. in 1 liter of ultrapure water and further diluting 100 times with 1 g of gettering agent prepared in Examples and Comparative Examples The solution was added to 50 g of an aqueous copper chloride solution having a concentration of 3 ppm and maintained at 121 ° C., 2 atm and 24 hours. Then, it filtered using the 0.10 micrometer pore diameter membrane filter.
• the residual copper ion concentration of the aqueous copper ion solution in the filtrate was measured by atomic absorption spectrometry (measuring device: manufactured by Hitachi, Ltd., atomic absorption photometer Z5310, flame method), and the initial copper ion concentration (3 ppm) and residual From the copper ion concentration (ppm), the copper ion adsorption capacity and the copper ion adsorption rate are evaluated by the following formula.
• Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
• Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
• the back surface of the silicon wafer was dry-polished using a DGP 8760 manufactured by Disco Corporation (200 mm diameter, 75 ⁇ m thick, 10 nm thick crush layer).
• 1 g of copper chloride powder (manufactured by Kanto Chemical Co., Ltd., product name: copper chloride (II) dihydrate) is uniformly sprayed on the dry-polished surface of the silicon wafer (wafer back surface), and simulated reflow conditions (300 C., 30 minutes), and copper ions were diffused into the silicon wafer.
• a weak adhesive tape Adwill D-675 manufactured by Lintec after UV curing
• the resin film forming sheets for chips prepared in Examples and Comparative Examples were pasted at 40 ° C. on the back surface of the silicon wafer contaminated with copper ions.
• ultraviolet rays were irradiated (230 mW / cm 2 , 120 mJ / cm 2 ) from the release sheet surface using an ultraviolet ray irradiation device (Adwill RAD-2000 m / 12, manufactured by Lintec Corporation), and the release sheet was peeled off.
• thermosetting 140 degreeC, 1 hour
• it was put into pseudo reflow conditions 300 degreeC, 30 minutes).
• the wafer surface (mirror surface, non-sticking surface for chip resin film forming sheet) was pre-cleaned with hydrofluoric acid to remove contamination and natural oxide film (about 10 nm) adhering to the surface. Thereafter, the wafer outer periphery 10 mm was masked by being sandwiched by a Teflon (registered trademark) jig, and 5 ⁇ m from the wafer surface was etched with a nitric acid / hydrofluoric acid mixture (ratio 3: 1). The entire amount of the obtained etching solution was collected in an evaporating dish.
• Sample preparation was performed in a clean draft (class 10) installed in a clean room (class 100).
• the concentration of copper ions in the silicon wafer was quantitatively measured by ICP-MS measurement.
• the lower limit of copper ion quantification is 3.0 ⁇ 10 12 atoms / cm 3 (number of atoms per unit volume).
• the gettering performance of the chip resin film forming sheet was evaluated by measuring the concentration of copper ions eluted in the etching solution. The smaller the amount of copper ions eluted in the etching solution, the greater the amount of copper ions captured by the resin film, indicating higher gettering performance. A copper ion detection amount of 50 ⁇ 10 12 atoms / cm 3 or less was regarded as good, and a copper ion detection amount exceeding 50 ⁇ 10 12 atoms / cm 3 was regarded as defective.
• the quantitative analysis method for the copper ion concentration may be performed by a method such as atomic absorption analysis, ICP-OES, or TOF-SIMS.
• the mass reduction start temperature was measured using a differential thermal analyzer (manufactured by Shimadzu Corporation, TG / DTA analyzer DTG-60). Using the organic chelating agent prepared in Examples and Comparative Examples as a measurement sample, about 10 mg of the measurement sample was precisely weighed. The measurement sample was heated to 40 to 500 ° C. at a temperature rising temperature of 10 ° C./min, and the mass decrease start temperature was measured.
• Binder polymer component acrylic polymer comprising 55 parts by weight of n-butyl acrylate, 15 parts by weight of methyl acrylate, 20 parts by weight of glycidyl methacrylate, and 15 parts by weight of 2-hydroxyethyl acrylate (weight average molecular weight: 900,000, glass transition (Temperature: -28 ° C)
• Curing component (B1) Bisphenol A type epoxy resin (epoxy equivalent 180-200 g / eq)
• B2) Dicyclopentadiene type epoxy resin manufactured by DIC, Epicron HP-7200HH)
• Thermosetting agent Dicyandiamide (Asahi Denka Co., Adeka Hardener 3636AS)
• C Gettering agent: (C1-1) 3- (N-salicyloyl) amino-1,2,4-triazole
• Organic chelating agent organic chelating agent having a polyvalent carboxylic acid as a functional group (manufactured by Nagase ChemteX Corporation: Teclan DO, acid value 260 to 330 mg / g, mass reduction starting temperature 200 ° C.) (copper ion adsorption capacity 95 0.7%, copper ion adsorption rate 0.014%, particle size 1 ⁇ m) (C3) KW-2200 manufactured by Kyowa Chemical Industry Co., Ltd.
• Examples and Comparative Examples The above components were blended in the amounts shown in Table 1 to obtain a resin film forming layer composition.
• a release sheet (SP-PET3811, manufactured by Lintec Corporation, thickness 38 ⁇ m, surface tension 33 mN / m, melting point 200 ° C. or higher) made by removing a methyl ethyl ketone solution (solid concentration 61% by weight) of the obtained composition from silicone. After being dried on the surface to be peeled and coated to a thickness of 40 ⁇ m and dried (drying conditions: 100 ° C. in an oven for 3 minutes), a resin film forming layer is formed on the release sheet, and the resin film for chips A forming sheet was obtained.
• the gettering performance of the wafer (Reference Example 1) in which the copper ion-contaminated wafer and the wafer in which the copper ion-contaminated wafer was not attached was measured.
• the sheet for forming a resin film for a chip of the example exhibited excellent copper ion adsorption capacity, copper ion adsorption rate, and gettering performance. From this result, it was confirmed that a highly reliable semiconductor chip can be obtained by using the gettering agent (C) for the resin film forming layer.

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