WO2011125712A1 - 接着剤組成物、接着シートおよび半導体装置の製造方法 - Google Patents
接着剤組成物、接着シートおよび半導体装置の製造方法 Download PDFInfo
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- WO2011125712A1 WO2011125712A1 PCT/JP2011/057970 JP2011057970W WO2011125712A1 WO 2011125712 A1 WO2011125712 A1 WO 2011125712A1 JP 2011057970 W JP2011057970 W JP 2011057970W WO 2011125712 A1 WO2011125712 A1 WO 2011125712A1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/10—Homopolymers or copolymers of methacrylic acid esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to an adhesive composition particularly suitable for use in a process of dicing a semiconductor wafer or the like to obtain a semiconductor chip and die-bonding the semiconductor chip on an organic substrate or a lead frame, and the adhesive composition.
- the present invention relates to an adhesive sheet having an adhesive layer and a method for manufacturing a semiconductor device using the adhesive sheet.
- Semiconductor wafers such as silicon and gallium arsenide are manufactured in a large diameter state. After a circuit is formed on the surface of a semiconductor wafer, the semiconductor wafer is ground to a predetermined thickness by backside grinding, and is cut and separated (diced) into element small pieces (semiconductor chips), and then transferred to the next bonding process. At this time, the semiconductor wafer is subjected to dicing, cleaning, drying, expanding, and pick-up processes in a state where the semiconductor wafer is previously adhered to the adhesive sheet, and then transferred to the next bonding process (for example, Patent Document 1). To 4).
- the crushed layer is a fine unevenness on the ground wafer surface, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects. Due to stress due to surface irregularities and composition changes, even a slight impact may cause cracking and damage of the wafer. For this reason, after the back surface grinding is finished, chemical etching or plasma etching is generally performed on the back surface in order to remove the crushed layer. By removing the crushed layer, the strength of the wafer is improved, and good handling is maintained even for a wafer that has been ground to an extremely thin thickness.
- the semiconductor wafer comes into contact with various members during circuit formation, back surface grinding, and mounting. At this time, a metal such as copper is released from these other members, and the wafer may be subjected to metal contamination. Impurity metals accumulate in the wafer, and may ionize and move within the wafer under heating conditions such as reflow. And the metal ion which reached
- the crushed layer is a fine unevenness, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects, these compositions, Due to the non-uniformity of the structure, it is considered that the above-described impurity metals can be easily captured and the effect of reducing metal contamination can be obtained.
- a function of the crushed layer is also called a gettering function.
- Patent Documents 5 and 6 a technique for providing a gettering function by performing various processes on the semiconductor wafer and chip after removing the crushed layer has been proposed.
- JP-A-2-32181 JP-A-8-239636 Japanese Patent Laid-Open No. 10-8001 JP 2000-17246 A JP 2005-277116 A JP 2007-242713 A
- the present invention has been made in view of the above circumstances, and a gettering function is provided for a semiconductor device obtained without subjecting a semiconductor wafer or chip to a special process that increases the number of steps and complicates the process.
- the purpose is to grant.
- the present inventors have formulated an organic chelating agent or a heavy metal deactivator into an adhesive used for fixing a semiconductor chip, thereby obtaining a gettering site in the semiconductor device. As a result, the present invention has been completed.
- the present invention includes the following gist.
- An adhesive composition comprising an acrylic polymer (A), an epoxy thermosetting resin (B), a curing agent (C) and an organic chelating agent (D) or a heavy metal deactivator (E).
- a semiconductor wafer is attached to the adhesive layer of the adhesive sheet described in (8) above, and the semiconductor wafer is diced into a semiconductor chip, and the adhesive layer is fixed and left on the back surface of the semiconductor chip.
- a method for manufacturing a semiconductor device comprising a step of peeling from a material and placing the semiconductor chip on a die pad portion or another semiconductor chip via the adhesive layer.
- the adhesive composition according to the present invention when fixing a semiconductor chip, it becomes possible to introduce a gettering site into the obtained semiconductor device without subjecting the semiconductor wafer and the chip to special treatment. .
- the adhesive composition according to the present invention comprises an acrylic polymer (A), an epoxy thermosetting resin (B), a thermosetting agent (C) and an organic chelating agent (D) or a heavy metal deactivator (E).
- A acrylic polymer
- B epoxy thermosetting resin
- C thermosetting agent
- D organic chelating agent
- E heavy metal deactivator
- Acrylic polymer (A) is used to impart sufficient adhesiveness and film forming property (sheet processability) to the adhesive composition.
- a conventionally well-known acrylic polymer can be used as an acrylic polymer (A).
- the weight average molecular weight (Mw) of the acrylic polymer (A) is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000. If the weight average molecular weight of the acrylic polymer (A) is too low, the adhesive force between the adhesive layer and the substrate becomes high, and pickup failure may occur. If it is too high, the adhesive layer follows the irregularities of the chip mounting portion. It may not be possible and may be a cause of voids.
- the glass transition temperature (Tg) of the acrylic polymer (A) is preferably ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., and particularly preferably ⁇ 40 to 30 ° C. If the glass transition temperature of the acrylic polymer (A) is too low, the peeling force between the adhesive layer and the substrate may become large and chip pick-up failure may occur. If it is too high, the adhesive force for fixing the wafer will be low. May be insufficient.
- the monomer constituting the acrylic polymer (A) includes a (meth) acrylic acid ester monomer or a derivative thereof.
- an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) (Meth) acrylates having a cyclic skeleton such as cycloalkyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) Acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate, etc .; hydroxymethyl (meth) acrylate having a hydroxyl group
- polymerizing the monomer which has a hydroxyl group has preferable compatibility with the epoxy-type thermosetting resin (B) mentioned later.
- the acrylic polymer (A) may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, or the like.
- Epoxy-type thermosetting resin As an epoxy-type thermosetting resin (B), a conventionally well-known epoxy resin can be used. Specific examples of the epoxy thermosetting resin (B) include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins. And biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin and the like, and epoxy compounds having two or more functional groups in the molecule. These can be used individually by 1 type or in combination of 2 or more types.
- the adhesive composition of the present invention preferably contains 1 to 1500 parts by weight, more preferably 3 to 1200 parts by weight of the epoxy thermosetting resin (B) with respect to 100 parts by weight of the acrylic polymer (A). Part by weight is included. If the content of the epoxy thermosetting resin (B) is less than 1 part by weight, sufficient adhesiveness may not be obtained. If the content exceeds 1500 parts by weight, the peel strength between the adhesive layer and the substrate is high. And pickup failure may occur.
- a preferable curing agent (C) includes a compound having two or more functional groups capable of reacting with an epoxy group in one molecule.
- the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an acid anhydride. Of these, phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable. More preferably, a phenolic hydroxyl group and an amino group are mentioned.
- phenolic curing agent examples include polyfunctional phenolic resins, biphenols, novolac type phenolic resins, dicyclopentadiene type phenolic resins, zylock type phenolic resins, and aralkylphenolic resins.
- amine curing agent is DICY (dicyandiamide). These can be used individually by 1 type or in mixture of 2 or more types.
- the content of the curing agent (C) is preferably 0.1 to 500 parts by weight, and more preferably 1 to 200 parts by weight with respect to 100 parts by weight of the epoxy thermosetting resin (B). . If the content of the curing agent (C) is small, the adhesiveness may not be obtained due to insufficient curing, and if it is excessive, the moisture absorption rate of the adhesive composition increases and the package reliability may be lowered.
- Organic chelating agent (D) An organic chelating agent (D) is blended in the adhesive composition. By blending the organic chelating agent (D), a gettering function is imparted to the adhesive composition.
- the organic chelating agent (D) is not particularly limited, but has a polyvalent carboxylic acid as a functional group, and the acid value is preferably 100 to 600 mg / g, more preferably 260 to 330 mg / g. . If the acid value of the organic chelating agent (D) is smaller than 100 mg / g, the target gettering function is insufficient, and if it is larger than 600 mg / g, it may interact with the base thermosetting agent. is there.
- the mass decrease starting temperature of the organic chelating agent (D) by differential scanning calorimetry is preferably 190 ° C. or higher, more preferably 196 ° C. or higher.
- the mass reduction start temperature of the organic chelating agent (D) by differential scanning calorimetry is lower than 190 ° C., the IR reflow resistance of the semiconductor package incorporating the semiconductor device may be lowered.
- the amount of the organic chelating agent (D) is preferably 1 to 35 parts by weight, more preferably 10 to 35 parts by weight, and particularly preferably 20 to 30 parts by weight with respect to 100 parts by weight of the total amount of the adhesive composition. Part.
- the blending amount of the organic chelating agent (D) is too small, the target gettering function becomes insufficient, and when the blending amount is too large, the adhesion performance may be impaired.
- a gettering site can be introduced into a semiconductor device by blending such an organic chelating agent (D) into an adhesive composition used for fixing a semiconductor chip. For this reason, since the impurity metal accumulated in the wafer is captured by the organic chelating agent (D) in the adhesive layer even if it moves under heating conditions such as reflow, migration on the circuit surface Will never happen.
- the gettering function of the organic chelating agent (D) can be evaluated by, for example, the following copper ion adsorption ability.
- Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
- the copper ion adsorption capacity indicates the ratio of the amount of copper ions adsorbed or absorbed by the organic chelating agent, and the higher the copper ion adsorption capacity, the higher the gettering function.
- the copper chelate adsorption capacity of the organic chelating agent (D) used in the present invention is preferably 30% or more, more preferably 50% or more, and particularly preferably 95% or more.
- the gettering function can also be evaluated by the amount of copper ions adsorbed per unit weight of the organic chelating agent (hereinafter referred to as “copper ion adsorption rate”).
- the organic chelating agent is added to the copper ion aqueous solution in the same manner as described above, and the copper ion adsorption rate is determined by the following formula.
- Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the copper ion adsorption rate of the organic chelating agent (D) used in the present invention is preferably 0.003% or more, more preferably 0.010% or more, and particularly preferably 0.013% or more.
- the organic chelating agent (D) has a larger surface area per weight as the particle size is smaller, so that it becomes easier to capture the impurity metal and the gettering function is enhanced.
- the smaller the particle size the easier the thin adhesive processing. Therefore, the average particle size of the organic chelating agent (D) used in the present invention is preferably in the range of 1 nm to 30 ⁇ m, more preferably 5 nm to 10 ⁇ m, and particularly preferably 10 nm to 1 ⁇ m.
- the particle size is large in the raw material state, it is pulverized by an appropriate method (ball mill, three rolls, etc.) in advance or at the time of mixing when forming an adhesive composition.
- the average particle diameter of the organic chelating agent (D) was obtained from 100 particles by observation with a scanning electron microscope (SEM). When the particle shape was not spherical, the longest diameter was taken as the particle size.
- Heavy metal deactivator A heavy metal deactivator (E) may be blended in the adhesive composition in place of the organic chelating agent (D). By blending the heavy metal deactivator (E), a gettering function is imparted to the adhesive composition.
- the heavy metal deactivator is an additive blended in a small amount with various plastics in order to prevent the plastics from being deteriorated by a metal such as a catalyst residue.
- the heavy metal deactivator is considered to capture the metal component to reduce its action and prevent the deterioration of the plastic.
- various inorganic or organic deactivators are known.
- an organic heavy metal deactivator is preferred.
- the organic heavy metal deactivator is excellent in dispersibility in the adhesive composition.
- a heavy metal deactivator a compound having the following structure in a part of the molecule is preferably used.
- R is a hydrocarbon skeleton that may contain hydrogen or a hetero atom, and is particularly preferably a hydrocarbon skeleton containing a nitrogen atom and / or an oxygen atom.
- heavy metal deactivators include the following compounds. 3- (N-salicyloyl) amino-1,2,4-triazole (made by ADEKA, CDA-1, CAS No. 36411-52-6) Decamethylenedicarboxydisalicyloylhydrazide (ADEKA, CDA-6, CAS No.63245-38-5)
- a gettering site can be introduced into a semiconductor device by blending such a heavy metal deactivator with an adhesive composition used for fixing a semiconductor chip. For this reason, the impurity metal accumulated in the wafer is captured by the heavy metal deactivator (E) in the adhesive layer even when it moves under heating conditions such as reflow. No migration happens.
- the gettering function of the heavy metal deactivator can be evaluated by, for example, the following copper ion adsorption ability.
- 0.1 g of a heavy metal deactivator was added to 50 g of an aqueous copper chloride solution having a copper ion concentration of 300 ppm prepared by dissolving 0.805 g of copper (II) chloride dihydrate produced by 1 liter of ultrapure water.
- the aqueous solution was allowed to stand at 121 ° C. and 2 atm for 24 hours, and then the copper ion concentration (residual copper ion concentration) of the aqueous copper ion solution was measured.
- the initial copper ion concentration (300 ppm) and the residual copper ion concentration From (ppm) the copper ion adsorption capacity is evaluated by the following formula.
- Copper ion adsorption capacity (%) (300 ppm-residual copper ion concentration (ppm)) x 100/300 ppm
- the copper ion adsorption capacity indicates the ratio of the amount of copper ions adsorbed or absorbed by the heavy metal deactivator, and the higher the copper ion adsorption capacity, the higher the gettering function.
- the copper ion adsorption capacity of the heavy metal deactivator (E) used in the present invention is preferably 30% or more, more preferably 50% or more, and particularly preferably 95% or more.
- the gettering function can also be evaluated by the amount of copper ions adsorbed per unit weight of the heavy metal deactivator (hereinafter referred to as “copper ion adsorption rate”). Specifically, a heavy metal deactivator is introduced into a copper ion aqueous solution in the same manner as described above, and the copper ion adsorption rate is determined by the following formula.
- Copper ion adsorption rate (%) (300 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the copper ion adsorption rate of the heavy metal deactivator (E) used in the present invention is preferably 4% or more, more preferably 7% or more, and particularly preferably 14.5% or more.
- the average particle size of the heavy metal deactivator (C) used in the present invention is preferably in the range of 1 nm to 30 ⁇ m, more preferably 5 nm to 10 ⁇ m, and particularly preferably 10 nm to 1 ⁇ m.
- the particle size is large in the raw material state, it is pulverized by an appropriate method (ball mill, three rolls, etc.) in advance or at the time of mixing when forming an adhesive composition.
- the average particle diameter of the heavy metal deactivator (E) was obtained as an arithmetic average from 100 particles by observation with a scanning electron microscope (SEM). When the particle shape was not spherical, the longest diameter was taken as the particle size.
- the compounding amount of the heavy metal deactivator (E) in the adhesive composition of the present invention is preferably 1 to 30 parts by weight, more preferably 10 to 30 parts by weight with respect to 100 parts by weight of the total amount of the adhesive composition. Particularly preferred is 20 to 30 parts by weight. If the amount of the heavy metal deactivator (E) is too small, the target gettering function will be insufficient, and if the amount is too large, the adhesion performance may be impaired.
- the adhesive composition according to the present invention comprises the acrylic polymer (A), the epoxy thermosetting resin (B), the curing agent (C) and the organic chelating agent (D) or heavy metal deactivator ( In addition to E), the following components may be included.
- the curing accelerator (F) is used to adjust the curing rate of the adhesive composition.
- the curing accelerator (F) is preferably used particularly when the epoxy thermosetting resin (B) and the curing agent (C) are used in combination.
- Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole; Organic phosphines such as tributylphosphine, diphenylphosphine and triphenylphosphine; And tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate. These can be used individually by 1 type or in mixture of 2 or more types.
- the curing accelerator (F) is preferably 0.01 to 10 parts by weight, more preferably 0.1 to 1 part, based on 100 parts by weight of the total of the epoxy thermosetting resin (B) and the curing agent (C). Included in parts by weight.
- the curing accelerator (F) in an amount within the above range, it has excellent adhesive properties even when exposed to high temperatures and high humidity, and high package reliability even when exposed to severe reflow conditions. Sex can be achieved. If the content of the curing accelerator (F) is small, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator having high polarity will pass through the adhesive layer under high temperature and high humidity. The reliability of the package is lowered by segregation and segregation.
- an energy beam polymerizable compound may be blended.
- the energy beam polymerizable compound (G) contains an energy beam polymerizable group and is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams.
- Specific examples of the energy ray polymerizable compound (G) include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, or 1,4.
- acrylate compounds such as butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate and itaconic acid oligomer.
- a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000.
- the blending amount of the energy beam polymerizable compound (G) is not particularly limited, but it is preferably used at a ratio of about 1 to 50 parts by weight with respect to 100 parts by weight of the total amount of the adhesive composition.
- (H) Photopolymerization initiator When the adhesive composition of the present invention contains the energy ray-polymerizable compound (G) described above, energy rays polymerization is performed by irradiating energy rays such as ultraviolet rays in the use. The active compound is cured. At this time, by including the photopolymerization initiator (H) in the composition, the polymerization curing time and the amount of light irradiation can be reduced.
- photopolymerization initiator examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal.
- a photoinitiator (H) can be used individually by 1 type or in combination of 2 or more types.
- the blending ratio of the photopolymerization initiator (H) is preferably 0.1 to 10 parts by weight and more preferably 1 to 5 parts by weight with respect to 100 parts by weight of the energy beam polymerizable compound (G). . If the amount is less than 0.1 parts by weight, a satisfactory pick-up property may not be obtained due to insufficient photopolymerization. If the amount exceeds 10 parts by weight, a residue that does not contribute to photopolymerization is generated, and the curability of the adhesive composition. May be insufficient.
- the coupling agent (I) may be used for improving the adhesion and adhesion of the adhesive composition to the adherend. Moreover, the water resistance can be improved by using coupling agent (I), without impairing the heat resistance of the hardened
- the coupling agent (I) a compound having a group that reacts with a functional group of the acrylic polymer (A), the epoxy thermosetting resin (B), or the like is preferably used.
- a silane coupling agent is desirable.
- Such coupling agents include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ - (methacryloxypropyl).
- the coupling agent (I) is usually 0.1 to 20 parts by weight, preferably 0.2 to 10 parts by weight, with respect to 100 parts by weight in total of the acrylic polymer (A) and the epoxy thermosetting resin (B). Parts, more preferably 0.3 to 5 parts by weight. If the content of the coupling agent (I) is less than 0.1 parts by weight, the above effect may not be obtained, and if it exceeds 20 parts by weight, it may cause outgassing.
- Thermoplastic resin Thermoplastic resin (J) may be used for the adhesive composition.
- a thermoplastic resin (J) is mix
- the thermoplastic resin (J) preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000.
- the glass transition temperature of the thermoplastic resin (J) is preferably in the range of ⁇ 30 to 150 ° C., more preferably in the range of ⁇ 20 to 120 ° C. If the glass transition temperature of the thermoplastic resin (J) is too low, the peeling force between the adhesive layer and the substrate may become large and chip pick-up failure may occur. If it is too high, the adhesive force for fixing the wafer will be high. May be insufficient.
- thermoplastic resin (J) examples include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, and polystyrene. These can be used individually by 1 type or in mixture of 2 or more types.
- thermoplastic resin (J) is usually 1 to 300 parts by weight, preferably 2 to 2 parts per 100 parts by weight of the total of the acrylic polymer (A), the epoxy thermosetting resin (B) and the curing agent (C). 100 parts by weight are included. When the content of the thermoplastic resin (J) is within this range, the above effect can be obtained.
- Preferred inorganic fillers include silica, alumina, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride and other powders, beads made from these spheroids, single crystal fibers, and glass fibers.
- silica filler and alumina filler are preferable.
- the said inorganic filler (K) can be used individually or in mixture of 2 or more types.
- the content of the inorganic filler (K) can be adjusted in the range of usually 1 to 80% by weight with respect to the entire adhesive composition.
- crosslinking agent A crosslinking agent may be added to adjust the initial adhesive force and cohesive strength of the adhesive composition.
- examples of the crosslinking agent (L) include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.
- organic polyvalent isocyanate compound examples include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimers of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds. And a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound with a polyol compound.
- organic polyvalent isocyanate compounds include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, and diphenylmethane.
- organic polyvalent imine compound examples include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri- ⁇ -aziridinylpropionate, tetramethylolmethane-tri - ⁇ -aziridinylpropionate and N, N′-toluene-2,4-bis (1-aziridinecarboxamide) triethylenemelamine can be mentioned.
- the crosslinking agent (L) is usually in a ratio of 0.01 to 20 parts by weight, preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the acrylic polymer (A). Used.
- additives may be blended in the adhesive composition of the present invention as necessary.
- additives include plasticizers, antistatic agents, antioxidants, pigments, and dyes.
- the adhesive composition comprising the above components has pressure-sensitive adhesiveness and heat-curing property, and has a function of temporarily holding various adherends in an uncured state. Finally, a cured product having high impact resistance can be obtained through heat curing, and the adhesive strength is excellent, and sufficient adhesive properties can be maintained even under severe high temperature and high humidity conditions.
- the adhesive composition according to the present invention can be obtained by mixing the above-mentioned components at an appropriate ratio.
- each component may be diluted with a solvent in advance, or a solvent may be added during mixing.
- the adhesive sheet which concerns on this invention forms the adhesive bond layer which consists of the said adhesive composition so that peeling is possible on a base material.
- the shape of the adhesive sheet according to the present invention can be any shape such as a tape shape or a label shape.
- the base material of the adhesive sheet examples include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, and polybutylene.
- a transparent film such as a film or a fluororesin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Moreover, the film which colored these, an opaque film, etc. can be used.
- the adhesive sheet according to the present invention is affixed to various adherends, and after subjecting the adherend to required processing, the adhesive layer is left on the adherend to be peeled off from the substrate. That is, it is used in a process including a step of transferring an adhesive layer from a substrate to an adherend.
- the surface tension of the surface in contact with the adhesive layer of the substrate is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less.
- the lower limit is usually about 25 mN / m.
- Such a substrate having a low surface tension can be obtained by appropriately selecting the material, and can also be obtained by applying a release agent to the surface of the substrate and performing a release treatment.
- alkyd, silicone, fluorine, unsaturated polyester, polyolefin, wax, and the like are used as the release agent used for the substrate release treatment.
- alkyd, silicone, and fluorine release agents are used. Is preferable because it has heat resistance.
- the release agent can be applied as it is without solvent, or after solvent dilution or emulsification, using a gravure coater, Mayer bar coater, air knife coater, roll coater, etc.
- the laminate may be formed by room temperature or heating or electron beam curing, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, or the like.
- the thickness of the substrate is usually about 10 to 500 ⁇ m, preferably about 15 to 300 ⁇ m, particularly preferably about 20 to 250 ⁇ m.
- the thickness of the adhesive layer is usually 1 to 500 ⁇ m, preferably 5 to 300 ⁇ m, particularly preferably about 10 to 150 ⁇ m.
- the method for producing the adhesive sheet is not particularly limited, and the adhesive sheet may be produced by applying and drying a composition constituting the adhesive layer on the substrate, and the adhesive layer is provided on the release film. You may manufacture by transferring to the said base material. In addition, in order to protect an adhesive bond layer before using an adhesive sheet, you may laminate
- a release film one in which a release agent such as a silicone resin is applied to a plastic material such as a polyethylene terephthalate film or a polypropylene film is used.
- a pressure-sensitive adhesive layer or a pressure-sensitive adhesive tape may be separately provided on the outer peripheral portion of the surface of the adhesive layer in order to fix another jig such as a ring frame.
- a method of using the adhesive sheet according to the present invention will be described taking as an example the case where the adhesive sheet is applied to the manufacture of a semiconductor device.
- Method for manufacturing semiconductor device a semiconductor wafer is attached to the adhesive layer of the adhesive sheet, the semiconductor wafer is diced into a semiconductor chip, and the adhesive layer is fixedly left on the back surface of the semiconductor chip.
- a method for manufacturing a semiconductor device according to the present invention will be described in detail.
- a semiconductor wafer having a circuit formed on the front surface and a ground back surface is prepared.
- the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. Next, the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground.
- the grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. At the time of back surface grinding, an adhesive sheet called a surface protection sheet is attached to the circuit surface in order to protect the circuit on the surface.
- the circuit surface side (that is, the surface protection sheet side) of the wafer is fixed by a chuck table or the like, and the back surface side on which no circuit is formed is ground by a grinder.
- the thickness of the wafer after grinding is not particularly limited, but is usually about 20 to 500 ⁇ m.
- the method for manufacturing a semiconductor device of the present invention can be suitably applied particularly to a semiconductor wafer from which a crushed layer has been removed. That is, the method for manufacturing a semiconductor device of the present invention can be suitably applied to a semiconductor wafer in which the thickness of the fracture layer is reduced to 50 nm or less, further 30 nm or less, and particularly 10 nm or less.
- the ring frame and the back side of the semiconductor wafer are placed on the adhesive layer of the adhesive sheet according to the present invention, and lightly pressed to fix the semiconductor wafer.
- the energy ray polymerizable compound (G) is blended in the adhesive layer, the energy ray polymerizable compound (G) is cured by irradiating the adhesive layer with energy rays from the substrate side.
- the cohesive force of the agent layer is increased, and the adhesive force between the adhesive layer and the substrate is lowered.
- the energy rays to be irradiated include ultraviolet rays (UV) and electron beams (EB), and preferably ultraviolet rays are used.
- the semiconductor wafer is cut using a cutting means such as a dicing saw to obtain a semiconductor chip.
- the cutting depth at this time is a depth that takes into account the sum of the thickness of the semiconductor wafer and the adhesive layer and the wear of the dicing saw.
- the energy beam irradiation may be performed at any stage after the semiconductor wafer is pasted and before the semiconductor chip is peeled off (pickup). For example, it may be performed after dicing or after the following expanding step. Good. Further, the energy beam irradiation may be performed in a plurality of times.
- the adhesive sheet is expanded, the interval between the semiconductor chips is expanded, and the semiconductor chips can be picked up more easily. At this time, a deviation occurs between the adhesive layer and the base material, the adhesive force between the adhesive layer and the base material is reduced, and the pick-up property of the semiconductor chip is improved.
- the cut adhesive layer can be fixedly left on the back surface of the semiconductor chip and peeled off from the substrate.
- the semiconductor chip is placed on the die pad of the lead frame or the surface of another semiconductor chip (lower chip) via the adhesive layer (hereinafter, the die pad or lower chip surface on which the chip is mounted is referred to as “chip mounting portion”. To describe).
- the chip mounting portion is heated before or after the semiconductor chip is placed.
- the heating temperature is usually 80 to 200 ° C., preferably 100 to 180 ° C.
- the heating time is usually 0.1 seconds to 5 minutes, preferably 0.5 seconds to 3 minutes.
- the pressure is usually 1 kPa to 200 MPa.
- the heating conditions at this time are in the above heating temperature range, and the heating time is usually 1 to 180 minutes, preferably 10 to 120 minutes.
- the adhesive layer may be cured by using heat in resin sealing that is normally performed in package manufacturing, without temporarily performing the heat treatment after placement. Through such a process, the adhesive layer is cured, and the semiconductor chip and the chip mounting portion can be firmly bonded. Since the adhesive layer is fluidized under die-bonding conditions, the adhesive layer is sufficiently embedded in the unevenness of the chip mounting portion, and generation of voids can be prevented and the reliability of the package is improved.
- the adhesive composition and adhesive sheet of the present invention can be used for bonding semiconductor compounds, glass, ceramics, metals, etc., in addition to the above-described usage methods.
- Copper ion adsorption capacity and copper ion adsorption rate of organic chelating agent 1 g of the organic chelating agent prepared in Examples and Comparative Examples was added to 1 liter of ultrapure water. 805 g was dissolved and further diluted 100 times, and the resulting solution was added to 50 g of a copper chloride aqueous solution having a copper ion concentration of 3 ppm and left at 121 ° C. under 2 atm for 24 hours. Then, it filtered using the 0.10 micrometer pore diameter membrane filter.
- the residual copper ion concentration of the aqueous copper ion solution in the filtrate was measured by atomic absorption spectrometry (measuring device: manufactured by Hitachi, Ltd., atomic absorption photometer Z5310, flame method), and the initial copper ion concentration (3 ppm) and residual From the copper ion concentration (ppm), the copper ion adsorption capacity and the copper ion adsorption rate are evaluated by the following formula.
- Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
- Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the residual copper ion concentration of the aqueous copper ion solution in the filtrate was measured by atomic absorption spectrometry (measuring device: manufactured by Hitachi, Ltd., atomic absorption photometer Z5310, flame method), and the initial copper ion concentration (300 ppm) and the residual From the copper ion concentration (ppm), the copper ion adsorption capacity and the copper ion adsorption rate are evaluated by the following formula.
- Copper ion adsorption capacity (%) (300 ppm-residual copper ion concentration (ppm)) x 100/300 ppm
- Copper ion adsorption rate (%) (300 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the back surface of the silicon wafer was dry-polished using a DGP 8760 manufactured by Disco Corporation (200 mm diameter, 75 ⁇ m thick, 10 nm thick crush layer).
- 1 g of copper chloride powder (manufactured by Kanto Chemical Co., Ltd., product name: copper chloride (II) dihydrate) is uniformly sprayed on the dry-polished surface of the silicon wafer (wafer back surface), and simulated reflow conditions (300 C., 30 minutes), and copper ions were diffused into the silicon wafer.
- a weak adhesive tape Adwill D-675 manufactured by Lintec after UV curing
- the adhesive sheets prepared in Examples and Comparative Examples were attached to the back surface of the silicon wafer contaminated with copper ions at 40 ° C.
- ultraviolet irradiation 230 mW / cm 2 , 120 mJ / cm 2
- thermosetting 140 ° C., 1 hour
- pseudo reflow conditions 300 ° C., 30 minutes
- the wafer surface (mirror surface, adhesive sheet non-adhered surface) was pre-cleaned with hydrofluoric acid to remove contamination and natural oxide film (about 10 nm) adhering to the surface. Thereafter, the wafer outer periphery 10 mm was masked by being sandwiched by a Teflon (registered trademark) jig, and 5 ⁇ m from the wafer surface was etched with a nitric acid / hydrofluoric acid mixture (ratio 3: 1). The entire amount of the obtained etching solution was collected in an evaporating dish.
- the collected etching solution was heated and evaporated to dryness, and the residue was dissolved with a certain amount of nitric acid / hydrofluoric acid mixed solution to obtain a sample for measuring copper ion concentration.
- Sample preparation was performed in a clean draft (class 10) installed in a clean room (class 100).
- the concentration of copper ions in the silicon wafer was quantitatively measured by ICP-MS measurement.
- the lower limit of copper ion quantification is 3.0 ⁇ 10 12 atoms / cm 3 (number of atoms per unit volume).
- the gettering performance of the adhesive sheet was evaluated by measuring the concentration of copper ions eluted in the etching solution. It shows that the smaller the amount of copper ions eluted in the etching solution, the greater the amount of copper ions captured by the adhesive sheet, and the higher the gettering performance.
- a copper ion detection amount of 50 ⁇ 10 12 atoms / cm 3 or less was regarded as good, and a copper ion detection amount exceeding 50 ⁇ 10 12 atoms / cm 3 was regarded as defective.
- the quantitative analysis method for the copper ion concentration may be performed by a method such as atomic absorption analysis, ICP-OES, or TOF-SIMS.
- the mass reduction start temperature was measured using a differential thermal analyzer (manufactured by Shimadzu Corporation, TG / DTA analyzer DTG-60). Using the organic chelating agent prepared in Examples and Comparative Examples as a measurement sample, about 10 mg of the measurement sample was precisely weighed. The measurement sample was heated to 40 to 500 ° C. at a temperature rising temperature of 10 ° C./min, and the mass decrease start temperature was measured.
- Adhesive composition Each component which comprises an adhesive composition is shown below.
- Organic chelating agent Organic chelating agent having a polyvalent carboxylic acid as a functional group (Nagase Chemtex's Taken DO, acid value 260-330 mg / g, particle size 1 ⁇ m, mass reduction starting temperature 196 ° C.)
- Heavy metal deactivator (E1) 3- (N-salicyloyl) amino-1,2,4-triazole (manufactured by ADEKA, CDA-1, CAS No.
- Examples and Comparative Examples Each said component was mix
- a methyl ethyl ketone solution (solid concentration 61% by weight) of the obtained adhesive composition was applied on a silicone-treated release film (SP-PET 381031 manufactured by Lintec Corporation) to a thickness of 30 ⁇ m and dried (dried) Condition: After being oven-grown at 100 ° C. for 1 minute, it is bonded to a base material (polyethylene film, thickness 100 ⁇ m, surface tension 33 mN / m), and an adhesive sheet is obtained by transferring the adhesive layer onto the base material. It was.
- Table 2 shows the contents and results of the organic chelating agent or heavy metal deactivator with respect to 100 parts by weight of the adhesive composition.
- the adhesive sheets of the examples exhibited excellent copper ion adsorption capacity, copper ion adsorption rate, and gettering performance. From this result, it was confirmed that a highly reliable semiconductor device can be obtained by using the organic chelating agent (D) or the heavy metal deactivator (E) in the adhesive composition.
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Abstract
Description
(1)アクリル重合体(A)、エポキシ系熱硬化性樹脂(B)、硬化剤(C)および有機キレート剤(D)または重金属不活性化剤(E)を含む接着剤組成物。
重金属不活性化剤0.1gを、銅イオン濃度が300ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した後の該銅イオン水溶液の銅イオン濃度を測定し、
銅イオン吸着能=(300ppm-残留銅イオン濃度(ppm))×100/300ppmより銅イオン吸着能を求める。
接着剤組成物に十分な接着性および造膜性(シート加工性)を付与するためにアクリル重合体(A)が用いられる。アクリル重合体(A)としては、従来公知のアクリル重合体を用いることができる。
エポキシ系熱硬化性樹脂(B)としては、従来公知のエポキシ樹脂を用いることができる。エポキシ系熱硬化性樹脂(B)としては、具体的には、多官能系エポキシ樹脂や、ビフェニル化合物、ビスフェノールAジグリシジルエーテルやその水添物、オルソクレゾールノボラックエポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェニレン骨格型エポキシ樹脂など、分子中に2官能以上有するエポキシ化合物が挙げられる。これらは1種単独で、または2種以上を組み合わせて用いることができる。
硬化剤(C)は、エポキシ系熱硬化性樹脂(B)に対する硬化剤として機能する。好ましい硬化剤(C)としては、1分子中にエポキシ基と反応しうる官能基を2個以上有する化合物が挙げられる。その官能基としてはフェノール性水酸基、アルコール性水酸基、アミノ基、カルボキシル基および酸無水物などが挙げられる。これらのうち好ましくはフェノール性水酸基、アミノ基、酸無水物などが挙げられ、さらに好ましくはフェノール性水酸基、アミノ基が挙げられる。さらに好ましくはフェノール性水酸基、アミノ基が挙げられる。
接着剤組成物には、有機キレート剤(D)が配合される。有機キレート剤(D)を配合することで、接着剤組成物にはゲッタリング機能が付与される。
接着剤組成物には、上記有機キレート剤(D)の代わりに重金属不活性化剤(E)が配合されてもよい。重金属不活性化剤(E)を配合することで、接着剤組成物にはゲッタリング機能が付与される。
3-(N-サリチロイル)アミノ-1,2,4-トリアゾール(ADEKA社製、CDA-1、CAS No. 36411-52-6)
本発明に係る接着剤組成物は、上記アクリル重合体(A)、エポキシ系熱硬化性樹脂(B)、硬化剤(C)および有機キレート剤(D)または重金属不活性化剤(E)に加えて下記成分を含むことができる。
硬化促進剤(F)は、接着剤組成物の硬化速度を調整するために用いられる。硬化促進剤(F)は、特に、エポキシ系熱硬化性樹脂(B)と硬化剤(C)とを併用する場合に好ましく用いられる。
本発明の接着剤組成物において、エネルギー線重合性化合物が配合されていてもよい。エネルギー線重合性化合物(G)は、エネルギー線重合性基を含み、紫外線、電子線等のエネルギー線の照射を受けると重合硬化する。このようなエネルギー線重合性化合物(G)として具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレートあるいは1,4-ブチレングリコールジアクリレート、1,6-ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、オリゴエステルアクリレート、ウレタンアクリレート系オリゴマー、エポキシ変性アクリレート、ポリエーテルアクリレートおよびイタコン酸オリゴマーなどのアクリレート系化合物が挙げられる。このような化合物は、分子内に少なくとも1つの重合性二重結合を有し、通常は、重量平均分子量が100~30000、好ましくは300~10000程度である。エネルギー線重合性化合物(G)の配合量は、特に限定はされないが、接着剤組成物の全量100重量部に対して、1~50重量部程度の割合で用いることが好ましい。
本発明の接着剤組成物が、前述したエネルギー線重合性化合物(G)を含有する場合には、その使用に際して、紫外線等のエネルギー線を照射して、エネルギー線重合性化合物を硬化させる。この際、該組成物中に光重合開始剤(H)を含有させることで、重合硬化時間ならびに光線照射量を少なくすることができる。
カップリング剤(I)は、接着剤組成物の被着体に対する接着性、密着性を向上させるために用いてもよい。また、カップリング剤(I)を使用することで、接着剤組成物を硬化して得られる硬化物の耐熱性を損なうことなく、その耐水性を向上することができる。
接着剤組成物には、熱可塑性樹脂(J)を用いてもよい。熱可塑性樹脂(J)は、硬化後の接着剤層の可とう性を保持するために配合される。熱可塑性樹脂(J)としては、重量平均分子量が1000~10万のものが好ましく、3000~8万のものがさらに好ましい。上記範囲の熱可塑性樹脂(J)を含有することにより、半導体チップのピックアップ工程における基材と接着剤層との層間剥離を容易に行うことができ、さらに基板の凹凸へ接着剤層が追従しボイドなどの発生を抑えることができる。
無機充填材(K)を接着剤組成物に配合することにより、該組成物の熱膨張係数を調整することが可能となり、半導体チップや金属または有機基板に対して硬化後の接着剤層の熱膨張係数を最適化することでパッケージ信頼性を向上させることができる。また、接着剤層の硬化後の吸湿率を低減させることも可能となる。
接着剤組成物の初期接着力および凝集力を調節するために、架橋剤を添加することもできる。架橋剤(L)としては有機多価イソシアネート化合物、有機多価イミン化合物などが挙げられる。
本発明の接着剤組成物には、上記の他に、必要に応じて各種添加剤が配合されてもよい。各種添加剤としては、可塑剤、帯電防止剤、酸化防止剤、顔料、染料などが挙げられる。
上記のような各成分からなる接着剤組成物は、感圧接着性と加熱硬化性とを有し、未硬化状態では各種被着体を一時的に保持する機能を有する。そして熱硬化を経て最終的には耐衝撃性の高い硬化物を与えることができ、接着強度にも優れ、厳しい高温度高湿度条件下においても十分な接着特性を保持し得る。
本発明に係る接着シートは、上記接着剤組成物からなる接着剤層を基材上に剥離可能に形成してなる。本発明に係る接着シートの形状は、テープ状、ラベル状などあらゆる形状をとり得る。
(半導体装置の製造方法)
本発明に係る半導体装置の製造方法は、上記接着シートの接着剤層に半導体ウエハを貼着し、該半導体ウエハをダイシングして半導体チップとし、該半導体チップ裏面に接着剤層を固着残存させて基材から剥離し、該半導体チップを有機基板やリードフレームのダイパッド部上、またはチップを積層する場合に別の半導体チップ上に該接着剤層を介して載置する工程を含む。
本発明に係る半導体装置の製造方法においては、まず、表面に回路が形成され、裏面が研削された半導体ウエハを準備する。
(1)有機キレート剤の銅イオン吸着能および銅イオン吸着率
実施例および比較例で準備した有機キレート剤1gを、超純水1lに関東化学社製塩化銅(II)二水和物0.805gを溶解し、さらに100倍に希釈して作成した銅イオン濃度が3ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した。その後、孔径0.10μmメンブレンフィルターを用いてろ過した。ろ液中の該銅イオン水溶液の残留銅イオン濃度を原子吸光分析法(測定装置:日立製作所社製、原子吸光光度計Z5310、フレーム法)により測定し、初期銅イオン濃度(3ppm)と、残留銅イオン濃度(ppm)とから、下記式により銅イオン吸着能および銅イオン吸着率を評価する。
実施例および比較例で準備した重金属不活性化剤0.1gを、超純水1lに関東化学社製塩化銅(II)二水和物0.805gを溶解して作成した銅イオン濃度が300ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した。その後、孔径0.10μmメンブレンフィルターを用いてろ過した。ろ液中の該銅イオン水溶液の残留銅イオン濃度を原子吸光分析法(測定装置:日立製作所社製、原子吸光光度計Z5310、フレーム法)により測定し、初期銅イオン濃度(300ppm)と、残留銅イオン濃度(ppm)とから、下記式により銅イオン吸着能および銅イオン吸着率を評価する。
ディスコ社製DGP8760を用いて、シリコンウエハの裏面をドライポリッシュ処理した(200mm径、厚さ75μm、破砕層の厚み10nm)。シリコンウエハのドライポリッシュ処理した面(ウエハ裏面)に、塩化銅(II)粉末(関東化学社製、品名:塩化銅(II)二水和物)1gを均一に散布し、擬似リフロー条件(300℃、30分)に投入し、シリコンウエハ内に銅イオンを拡散させた。その後、ウエハ裏面に弱粘着テープ(紫外線硬化後のリンテック社製Adwill D-675)を貼付・剥離を繰り返し、ウエハ裏面から塩化銅(II)粉末を除去した。
装置:パーキンエルマー社製 ELAN6100DRC Plus
条件等 :プラズマパワー1500W。銅イオン定量下限は、3.0×1012atoms/cm3(単位体積あたりの原子数)。
質量減少開始温度の測定は、示差熱分析装置(島津製作所社製、TG/DTA分析器DTG-60)を用いて行った。実施例および比較例で準備した有機キレート剤を測定試料とし、約10mgの測定試料を精密に秤量した。測定試料を昇温温度10℃/分にて40~500℃まで昇温し、質量減少開始温度を測定した。
接着剤組成物を構成する各成分を下記に示す。
(A)アクリル重合体:n-ブチルアクリレート55重量部、メチルアクリレート10重量部、グリシジルメタクリレート20重量部、及び2-ヒドロキシエチルアクリレート15重量部からなる共重合体(重量平均分子量:90万、ガラス転移温度:-28℃)
(B)エポキシ系熱硬化性樹脂:
(B1)ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン社製 jER828、エポキシ当量235g/eq)
(B2)ノボラック型エポキシ樹脂(日本化薬社製 EOCN-104S、エポキシ当量218g/eq)
(B3)ビスフェノールA型エポキシ樹脂(日本触媒社製 BPA328)
(B4)フェニレン骨格型エポキシ樹脂(日本化薬社製 EPPN-502H)
(C)硬化剤:ノボラック型フェノール樹脂(昭和高分子社製 ショウノールBRG-556、フェノール性水酸基当量103g/eq)
(D)有機キレート剤:多価カルボン酸を官能基として有する有機キレート剤(ナガセケムテックス社製 テークランDO、酸価260~330mg/g、粒径1μm、質量減少開始温度196℃)
(E)重金属不活性化剤:
(E1)3-(N-サリチロイル)アミノ-1,2,4-トリアゾール(ADEKA社製、CDA-1、CAS No. 36411-52-6、粒径1μm)
(G)エネルギー線重合性化合物:
(G1)多官能アクリレートオリゴマー(日本化薬社製 KAYARAD R-684、分子量)
(G2)多官能アクリレートオリゴマー(新中村化学社製 NKエステルA-DPH、分子量580)
(H)光重合開始剤:1-ヒドロキシ-シクロヘキシル-フェニルケトン(チバ・スペシャリティ・ケミカルズ社製:イルガキュア184)
(I)カップリング剤:
(I1)シランカップリング剤(信越化学社製 KBE-403)
(I2)シランカップリング剤(三菱化学社製 MKCシリケートMSEP2)
(J)熱可塑性樹脂:ポリエステル樹脂(東洋紡社製 バイロン220)
(K)無機充填材:シリカフィラー(アドマテックス社製:アドマファインSC2050)
上記各成分を表1に記載の量で配合し、接着剤組成物を得た。得られた接着剤組成物のメチルエチルケトン溶液(固形濃度61重量%)を、シリコーン処理された剥離フィルム(リンテック株式会社製 SP-PET381031)上に乾燥後30μmの厚みになるように塗布、乾燥(乾燥条件:オーブンにて100℃、1分間)した後に基材(ポリエチレンフィルム、厚さ100μm、表面張力33mN/m)と貼り合せて、接着剤層を基材上に転写することで接着シートを得た。
Claims (10)
- アクリル重合体(A)、エポキシ系熱硬化性樹脂(B)、硬化剤(C)および有機キレート剤(D)または重金属不活性化剤(E)を含む接着剤組成物。
- 有機キレート剤(D)が、多価カルボン酸を官能基として有し、その酸価が100~600mg/gである請求項1に記載の接着剤組成物。
- 有機キレート剤(D)の示差走査熱分析(TG/DTA)による質量減少開始温度が、190℃以上である請求項1または2に記載の接着剤組成物。
- 接着剤組成物100重量部あたり有機キレート剤(D)を1~35重量部含有する請求項1~3のいずれかに記載の接着剤組成物。
- 接着剤組成物100重量部あたり重金属不活性化剤(E)を1~30重量部含有する請求項1に記載の接着剤組成物。
- 下記により定義される重金属不活性化剤(E)の銅イオン吸着能が30%以上である請求項1または5に記載の接着剤組成物:
重金属不活性化剤0.1gを、銅イオン濃度が300ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した後の該銅イオン水溶液の銅イオン濃度を測定し、
銅イオン吸着能=(300ppm-残留銅イオン濃度(ppm))×100/300ppmより銅イオン吸着能を求める。 - 請求項1~7のいずれかに記載の接着剤組成物からなる接着剤層が基材上に剥離可能に形成されてなる接着シート。
- 請求項8に記載の接着シートの接着剤層に半導体ウエハを貼着し、該半導体ウエハをダイシングして半導体チップとし、該半導体チップ裏面に該接着剤層を固着残存させて基材から剥離し、該半導体チップをダイパッド部上、または別の半導体チップ上に該接着剤層を介して載置する工程を含む半導体装置の製造方法。
- 前記半導体ウエハが、裏面研削後、裏面研削により生じた破砕層を厚み50nm以下にまで低減されたものである請求項9に記載の半導体装置の製造方法。
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TW201141972A (en) | 2011-12-01 |
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