WO2011125711A1 - チップ用樹脂膜形成用シートおよび半導体チップの製造方法 - Google Patents
チップ用樹脂膜形成用シートおよび半導体チップの製造方法 Download PDFInfo
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- WO2011125711A1 WO2011125711A1 PCT/JP2011/057969 JP2011057969W WO2011125711A1 WO 2011125711 A1 WO2011125711 A1 WO 2011125711A1 JP 2011057969 W JP2011057969 W JP 2011057969W WO 2011125711 A1 WO2011125711 A1 WO 2011125711A1
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- WIPO (PCT)
- Prior art keywords
- resin film
- forming layer
- sheet
- film forming
- copper ion
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2924/3512—Cracking
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
Definitions
- the present invention relates to a resin film forming sheet for a chip that can efficiently form a resin film having a gettering effect on the back surface of a semiconductor chip and can improve the manufacturing efficiency of the chip.
- the present invention relates to a resin film forming sheet for a chip used for manufacturing a semiconductor chip mounted by a so-called face-down method.
- this invention relates to the manufacturing method of the semiconductor chip using the said resin film formation sheet for chips.
- the crushed layer is a fine unevenness on the ground wafer surface, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects. Due to stress due to surface irregularities and composition changes, even a slight impact may cause cracking and damage of the wafer. For this reason, after the back surface grinding is finished, chemical etching or plasma etching is generally performed on the back surface in order to remove the crushed layer. By removing the crushed layer, the strength of the wafer is improved, and good handling is maintained even for a wafer that has been ground to an extremely thin thickness.
- the semiconductor wafer comes into contact with various members during circuit formation, back surface grinding, and mounting. At this time, a metal such as copper is released from these other members, and the wafer may be subjected to metal contamination. Impurity metals accumulate in the wafer, and may ionize and move within the wafer under heating conditions such as reflow. And the metal ion which reached
- the crushed layer is a fine unevenness, is in a state where silicon polycrystal or silicon is oxidized by a small amount of oxygen, and is considered to include lattice defects, these compositions, Due to the non-uniformity of the structure, it is considered that the above-described impurity metals can be easily captured and the effect of reducing metal contamination can be obtained.
- a function of the crushed layer is also called a gettering function.
- Patent Documents 1 and 2 propose techniques for providing a gettering function by performing various processes on the semiconductor wafer and chips after removing the crushed layer.
- the present invention has been made in view of the above circumstances, and a gettering function is provided for a semiconductor device obtained without subjecting a semiconductor wafer or chip to a special process that increases the number of steps and complicates the process.
- the purpose is to grant.
- the present inventors have conceived that a gettering site can be introduced into a semiconductor device by providing a gettering function to the resin film formed on the back surface of the semiconductor chip. As a result, the present invention has been completed.
- the present invention includes the following gist. (1) having a release sheet and a resin film forming layer formed on the release surface of the release sheet; A resin film-forming sheet for chips, wherein the resin film-forming layer contains a binder polymer component (A), a curable component (B), and a gettering agent (C).
- a resin film-forming sheet for chips wherein the resin film-forming layer contains a binder polymer component (A), a curable component (B), and a gettering agent (C).
- the gettering agent (C) is selected from the group consisting of a heavy metal deactivator (C1), an organic chelating agent (C2), and a copper ion-trapping metal compound (C3).
- the resin film-forming layer of the protective film-forming sheet for chips according to any one of (1) to (6) is attached to the back surface of the semiconductor wafer having a circuit formed on the front surface, and the resin film is attached to the back surface.
- a method for producing a semiconductor chip comprising: obtaining a semiconductor chip having the semiconductor chip.
- Step (1) peeling the resin film forming layer and the release sheet
- Step (2) curing the resin film forming layer
- Step (3) Dicing the semiconductor wafer and the resin film forming layer.
- the gettering site can be added to the obtained semiconductor device by using the resin film forming sheet for chip according to the present invention without performing any special treatment on the semiconductor wafer or chip. It becomes possible to introduce.
- the resin film forming sheet for chips according to the present invention includes a release sheet and a resin film forming layer formed on the release surface of the release sheet.
- the resin film forming layer includes a binder polymer component (A), a curable component (B), and a gettering agent (C).
- Binder polymer component The binder polymer component (A) is used for imparting sufficient adhesion and film forming property (sheet processability) to the resin film-forming layer.
- the binder polymer component (A) conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers, and the like can be used.
- the weight average molecular weight (Mw) of the binder polymer component (A) is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. If the weight average molecular weight of the binder polymer component (A) is too low, the adhesive force between the resin film forming layer and the release sheet increases, and transfer failure of the resin film forming layer may occur. Adhesiveness may decrease and transfer to a chip or the like may not be possible, or the resin film may peel from the chip or the like after transfer.
- the glass transition temperature (Tg) of the acrylic polymer is preferably in the range of ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., and particularly preferably ⁇ 40 to 30 ° C. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the resin film forming layer and the release sheet may increase, resulting in poor transfer of the resin film forming layer, and if too high, the adhesion of the resin film forming layer will be reduced. However, the transfer to the chip or the like may be impossible, or the resin film may be peeled off from the chip or the like after the transfer.
- the monomer constituting the acrylic polymer includes a (meth) acrylic acid ester monomer or a derivative thereof.
- an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) (Meth) acrylates having a cyclic skeleton such as cycloalkyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) Acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate, etc .; hydroxymethyl (meth) acrylate having a hydroxyl group, 2-hydroxy
- polymerizing the monomer which has a hydroxyl group has preferable compatibility with the sclerosing
- the acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, or the like.
- thermosetting component A thermosetting component and a thermosetting agent are used for the curable component (B).
- thermosetting component for example, an epoxy resin is preferable.
- epoxy resin a conventionally known epoxy resin can be used.
- epoxy resins include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, and bisphenols.
- epoxy compounds having two or more functional groups in the molecule such as A-type epoxy resin, bisphenol F-type epoxy resin, and phenylene skeleton-type epoxy resin. These can be used individually by 1 type or in combination of 2 or more types.
- the resin film-forming layer preferably contains 1 to 1500 parts by weight, more preferably 3 to 1200 parts by weight of the thermosetting component with respect to 100 parts by weight of the binder polymer component (A). If the content of the thermosetting component is less than 1 part by weight, sufficient adhesiveness may not be obtained, and if it exceeds 1500 parts by weight, the release force between the resin film-forming layer and the release sheet increases, and the resin film A transfer defect of the formation layer may occur.
- thermosetting agent functions as a curing agent for thermosetting components, particularly epoxy resins.
- a preferable thermosetting agent includes a compound having two or more functional groups capable of reacting with an epoxy group in one molecule.
- the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an acid anhydride.
- phenolic hydroxyl groups, amino groups, acid anhydrides and the like are preferable, and phenolic hydroxyl groups and amino groups are more preferable. More preferably, a phenolic hydroxyl group and an amino group are mentioned.
- phenolic curing agent examples include polyfunctional phenolic resins, biphenols, novolac type phenolic resins, dicyclopentadiene type phenolic resins, zylock type phenolic resins, and aralkylphenolic resins.
- amine curing agent is DICY (dicyandiamide). These can be used individually by 1 type or in mixture of 2 or more types.
- the content of the thermosetting agent is preferably 0.1 to 500 parts by weight, and more preferably 1 to 200 parts by weight with respect to 100 parts by weight of the thermosetting component.
- the content of the thermosetting agent is small, the adhesiveness may not be obtained due to insufficient curing, and when it is excessive, the moisture absorption rate of the resin film forming layer is increased and the reliability of the semiconductor device may be lowered.
- the gettering agent (C) is not particularly limited as long as it has an action of capturing metal ions such as copper ions, but is preferably a heavy metal deactivator (C1) or an organic chelating agent (C2). And at least one selected from the group consisting of a copper ion-trapping metal compound (C3).
- a heavy metal deactivator is an additive blended in a small amount with various plastics in order to prevent the plastic from being deteriorated by a metal such as a catalyst residue.
- the heavy metal deactivator is considered to capture the metal component to reduce its action and prevent the deterioration of the plastic.
- various inorganic or organic deactivators are known.
- the organic heavy metal deactivator is excellent in dispersibility in the resin film forming layer.
- a heavy metal deactivator a compound having the following structure in a part of the molecule is preferably used.
- R is hydrogen or a hydrocarbon skeleton that may contain a hetero atom, and particularly preferably a hydrocarbon skeleton that contains a nitrogen atom and / or an oxygen atom.
- heavy metal deactivators include the following compounds. 3- (N-salicyloyl) amino-1,2,4-triazole (made by ADEKA, CDA-1, CAS No. 36411-52-6) Decamethylenedicarboxydisalicyloylhydrazide (ADEKA, CDA-6, CAS No.63245-38-5)
- the organic chelating agent (C2) is not particularly limited, but has a polyvalent carboxylic acid as a functional group, and preferably has an acid value of 100 to 600 mg / g, and 260 to 330 mg / g. It is more preferable that If the acid value of the organic chelating agent (C2) is smaller than 100 mg / g, the target gettering function is insufficient, and if it is larger than 600 mg / g, it may cause an interaction with the base thermosetting agent. .
- the mass decrease start temperature of the organic chelating agent (C2) by differential scanning calorimetry (TG / DTA) is preferably 190 ° C. or higher, more preferably 196 ° C. or higher.
- the mass reduction start temperature by differential scanning calorimetry (TG / DTA) of the organic chelating agent (C2) is lower than 190 ° C., the IR reflow resistance of the semiconductor device may be lowered.
- the copper ion capturing metal compound (C3) has an effect of capturing copper ions.
- examples thereof include oxides such as antimony, bismuth, magnesium and aluminum, hydroxides, nitrates and carbonates. These are preferable in that the effect can be obtained with a small amount.
- examples thereof preferably include antimony oxide, bismuth oxide, and a mixture thereof, and hydrotalcite that is a magnesium-aluminum oxide and a fired product thereof. Al in the hydrotalcite may be substituted with Cr or Fe.
- the gettering agent (C) can be used singly or in combination of two or more.
- the blending amount of the gettering agent (C) is preferably 1 to 35 parts by weight, more preferably 10 to 35 parts by weight, particularly preferably 100 parts by weight of the total solid content constituting the resin film forming layer. 20 to 30 parts by weight.
- the amount of the gettering agent (C) is too small, the target gettering function is insufficient, and when the amount is too large, the adhesion performance may be impaired.
- Such a gettering agent (C) can be introduced into the semiconductor device by blending it into the resin film of the semiconductor chip. For this reason, the impurity metal accumulated in the wafer is captured by the gettering agent (C) in the resin film even if it moves under heating conditions such as reflow, so that migration occurs on the circuit surface. None happen.
- the gettering function of the gettering agent (C) can be evaluated by, for example, the following copper ion adsorption ability.
- Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
- the copper ion adsorption capacity indicates the ratio of the amount of copper ions trapped (adsorbed or absorbed) by the gettering agent, and the higher the copper ion adsorption capacity, the higher the gettering function.
- the copper ion adsorption ability of the gettering agent (C) used in the present invention is preferably 30% or more, more preferably 50% or more, and particularly preferably 95% or more.
- the gettering function can also be evaluated by the amount of copper ions adsorbed per unit weight of the gettering agent (hereinafter referred to as “copper ion adsorption rate”). Specifically, a gettering agent is added to a copper ion aqueous solution in the same manner as described above, and the copper ion adsorption rate is obtained by the following formula.
- Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the copper ion adsorption rate of the gettering agent (C) used in the present invention is preferably 0.003% or more, more preferably 0.01% or more, and particularly preferably 0.013% or more.
- the gettering agent (C) generally has a larger surface area per weight as the particle size is smaller, so that it becomes easier to capture impurity metals and the gettering function is enhanced.
- the smaller the particle size the easier the thin adhesive processing. Therefore, the average particle diameter of the gettering agent (C) used in the present invention is preferably in the range of 1 nm to 30 ⁇ m, more preferably 5 nm to 10 ⁇ m, and particularly preferably 10 nm to 1 ⁇ m.
- the particle size is large in the raw material state, it is pulverized by an appropriate method (ball mill, three rolls, etc.) in advance or when mixed with other components.
- the average particle diameter of the gettering agent (C) was obtained as an arithmetic average from 100 particles by observation with a scanning electron microscope (SEM). When the particle shape was not spherical, the longest diameter was taken as the particle size.
- Colorant Colorant (D) can be mix
- organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties. Examples of the black pigment include carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like, but are not limited thereto. Carbon black is particularly preferable from the viewpoint of increasing the reliability of the semiconductor device.
- the blending amount of the colorant (D) is preferably 0.1 to 35 parts by weight, more preferably 0.5 to 25 parts by weight, particularly preferably 100 parts by weight of the total solid content constituting the resin film forming layer. Is 1 to 15 parts by weight.
- the resin film forming layer can contain the following components in addition to the binder polymer component (A), the curable component (B), the gettering agent (C), and the colorant (D).
- the curing accelerator (E) is used to adjust the curing speed of the resin film forming layer.
- the curing accelerator (E) is particularly preferably used when the epoxy resin and the thermosetting agent are used in combination in the curable component (B).
- Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole; Organic phosphines such as tributylphosphine, diphenylphosphine and triphenylphosphine; And tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate. These can be used individually by 1 type or in mixture of 2 or more types.
- the curing accelerator (E) is contained in an amount of preferably 0.01 to 10 parts by weight, more preferably 0.1 to 1 part by weight with respect to 100 parts by weight of the curable component (B). By containing the curing accelerator (E) in an amount within the above range, it has excellent adhesive properties even when exposed to high temperatures and high humidity, and high reliability even when exposed to severe reflow conditions. Can be achieved. If the content of the curing accelerator (E) is low, sufficient adhesive properties cannot be obtained due to insufficient curing, and if it is excessive, the curing accelerator having a high polarity will adhere to the resin film forming layer at high temperature and high humidity. The reliability of the semiconductor device is lowered by moving to the side and segregating.
- the coupling agent (F) may be used to improve the adhesion and adhesion of the resin film forming layer to the chip. Moreover, the water resistance can be improved by using a coupling agent (F), without impairing the heat resistance of the resin film obtained by hardening
- the coupling agent (F) a compound having a group that reacts with a functional group of the binder polymer component (A), the curable component (B), or the like is preferably used.
- a silane coupling agent is desirable.
- Such coupling agents include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ - (methacryloxypropyl).
- the coupling agent (F) is usually 0.1 to 20 parts by weight, preferably 0.2 to 10 parts by weight, based on 100 parts by weight of the total of the binder polymer component (A) and the curable component (B). Preferably, it is contained at a ratio of 0.3 to 5 parts by weight. If the content of the coupling agent (F) is less than 0.1 parts by weight, the above effect may not be obtained, and if it exceeds 20 parts by weight, it may cause outgassing.
- Preferred inorganic fillers include powders such as silica, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride, beads formed by spheroidizing them, single crystal fibers, and glass fibers.
- silica filler is preferable.
- the said inorganic filler (G) can be used individually or in mixture of 2 or more types.
- the content of the inorganic filler (G) can be adjusted in the range of usually 1 to 80 parts by weight with respect to 100 parts by weight of the total solid content constituting the resin film forming layer.
- an energy ray polymerizable compound may be blended.
- the energy ray polymerizable compound (H) contains an energy ray polymerizable group and is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams.
- energy beam polymerizable compounds (H) include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, or 1,4.
- acrylate compounds such as butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate and itaconic acid oligomer.
- a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of about 100 to 30,000, preferably about 300 to 10,000.
- the amount of the energy beam polymerizable compound (H) is not particularly limited, but it is preferably used at a ratio of about 1 to 50 parts by weight with respect to 100 parts by weight of the total solid content constituting the resin film forming layer.
- the resin film-forming layer contains the above-mentioned energy beam polymerizable compound (H)
- the energy beam polymerizable compound is irradiated by irradiating energy rays such as ultraviolet rays when used. Harden.
- the photopolymerization initiator (I) in the composition by including the photopolymerization initiator (I) in the composition, the polymerization curing time and the light irradiation amount can be reduced.
- photopolymerization initiator (I) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal.
- a photoinitiator (I) can be used individually by 1 type or in combination of 2 or more types.
- the blending ratio of the photopolymerization initiator (I) is preferably 0.1 to 10 parts by weight and more preferably 1 to 5 parts by weight with respect to 100 parts by weight of the energy beam polymerizable compound (H). . If it is less than 0.1 part by weight, satisfactory transferability may not be obtained due to insufficient photopolymerization. If it exceeds 10 parts by weight, a residue that does not contribute to photopolymerization is generated, and the curability of the resin film forming layer May be insufficient.
- thermoplastic resin You may mix
- a thermoplastic resin (J) is mix
- the thermoplastic resin (J) preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000.
- the glass transition temperature of the thermoplastic resin (J) is preferably in the range of ⁇ 30 to 150 ° C., more preferably in the range of ⁇ 20 to 120 ° C. If the glass transition temperature of the thermoplastic resin (J) is too low, the peeling force between the resin film-forming layer and the release sheet may increase and transfer failure of the resin film-forming layer may occur. There is a possibility that the adhesive force with the chip is insufficient.
- thermoplastic resin (J) examples include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, and polystyrene. These can be used individually by 1 type or in mixture of 2 or more types.
- thermoplastic resin (J) is usually contained in an amount of 1 to 300 parts by weight, preferably 1 to 100 parts by weight, based on 100 parts by weight of the total of the binder polymer component (A) and the curable component (B). When the content of the thermoplastic resin (J) is within this range, the above effect can be obtained.
- crosslinking agent A crosslinking agent may be added to adjust the initial adhesive force and cohesive strength of the resin film-forming layer.
- examples of the crosslinking agent (K) include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.
- organic polyvalent isocyanate compound examples include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimers of these organic polyvalent isocyanate compounds, and these organic polyvalent isocyanate compounds. And a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound with a polyol compound.
- organic polyvalent isocyanate compounds include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, and diphenylmethane.
- organic polyvalent imine compound examples include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri- ⁇ -aziridinylpropionate, tetramethylolmethane-tri - ⁇ -aziridinylpropionate and N, N′-toluene-2,4-bis (1-aziridinecarboxamide) triethylenemelamine can be mentioned.
- the crosslinking agent (K) is usually 0.01 to 20 parts by weight, preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight, based on 100 parts by weight of the binder polymer component (A). Used.
- additives may be blended in the resin film forming layer as necessary.
- additives include plasticizers, antistatic agents, and antioxidants.
- the resin film forming layer composed of each component as described above has adhesiveness and heat-curing property, and can be easily bonded by pressing to a semiconductor wafer, a chip or the like in an uncured state. Finally, a resin film having high impact resistance can be provided through thermosetting, excellent in adhesive strength, and can maintain a sufficient protective function even under severe high temperature and high humidity conditions.
- the resin film forming layer may have a single layer structure, or may have a multilayer structure as long as one or more layers containing the above components are included. Furthermore, the resin film forming layer may have a concentration gradient of the gettering agent (C) in the thickness direction.
- the resin film-forming layer is obtained by applying and drying a composition for a resin film-forming layer obtained by mixing each of the above components in an appropriate solvent on a release sheet.
- the composition for resin film formation layers may be apply
- the resin film-forming sheet for chips according to the present invention is formed by releasably forming the resin film-forming layer on a release sheet.
- the shape of the resin film forming sheet for chips according to the present invention can take any shape such as a tape shape and a label shape.
- the release sheet for example, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, Polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film, fluorine A transparent film such as a resin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Moreover, the film which colored these, an opaque film, etc. can be used.
- the release sheet is peeled off when used, and the resin film forming layer is transferred to a semiconductor wafer or chip.
- the release sheet needs to withstand the heat during the heat-curing of the resin film-forming layer. Therefore, the polyethylene terephthalate film and the polyethylene naphthalate having excellent heat resistance A film, a polymethylpentene film, and a polyimide film are preferably used.
- the surface tension of the release sheet is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. .
- the lower limit is usually about 25 mN / m.
- alkyd, silicone, fluorine, unsaturated polyester, polyolefin, wax, and the like are used as the release agent used for the release treatment.
- alkyd, silicone, and fluorine release agents are heat resistant. This is preferable.
- the release agent is applied as it is without a solvent, or diluted or emulsified with a solvent, and applied with a gravure coater, Mayer bar coater, air knife coater, roll coater, etc.
- the laminate may be formed by normal temperature or heating or electron beam curing, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, or the like.
- the thickness of the release sheet is usually 10 to 500 ⁇ m, preferably 15 to 300 ⁇ m, particularly preferably about 20 to 250 ⁇ m.
- the thickness of the resin film forming layer is usually 1 to 500 ⁇ m, preferably 5 to 300 ⁇ m, and particularly preferably about 10 to 150 ⁇ m.
- a light peelable release film is laminated on the upper surface of the resin film forming layer separately from the release sheet before using the chip resin film forming sheet. May be.
- a method for manufacturing a semiconductor chip according to the present invention comprises attaching a resin film forming layer of the above-mentioned resin film forming sheet for a chip to a back surface of a semiconductor wafer having a circuit formed on the surface, and having a resin film on the back surface. It is characterized by obtaining.
- the resin film is preferably a protective film for a semiconductor chip.
- the semiconductor chip manufacturing method according to the present invention preferably further includes the following steps (1) to (3), wherein the steps (1) to (3) are performed in an arbitrary order. Step (1): peeling the resin film forming layer and the release sheet, Step (2): curing the resin film forming layer, Step (3): Dicing the semiconductor wafer and the resin film forming layer.
- the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. Next, the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground.
- the grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. At the time of back surface grinding, an adhesive sheet called a surface protection sheet is attached to the circuit surface in order to protect the circuit on the surface.
- the circuit surface side (that is, the surface protection sheet side) of the wafer is fixed by a chuck table or the like, and the back surface side on which no circuit is formed is ground by a grinder.
- the thickness of the wafer after grinding is not particularly limited, but is usually about 20 to 500 ⁇ m.
- the method for manufacturing a semiconductor chip of the present invention can be suitably applied particularly to a semiconductor wafer from which a crushed layer has been removed. That is, the semiconductor chip manufacturing method of the present invention can be suitably applied to a semiconductor wafer in which the thickness of the crush layer is 50 nm or less, further 30 nm or less, and particularly 10 nm or less.
- steps (1) to (3) are performed in an arbitrary order. Details of this process are described in detail in JP-A-2002-280329. As an example, the case where it performs in order of process (1), (2), (3) is demonstrated.
- the resin film forming layer of the above-mentioned resin film forming sheet for chips is attached to the back surface of a semiconductor wafer having a circuit formed on the front surface.
- the release sheet is peeled from the resin film forming layer to obtain a laminate of the semiconductor wafer and the resin film forming layer.
- the resin film forming layer is cured to form a resin film on the entire surface of the wafer. Since the resin film forming layer contains the curable component (B), the resin film forming layer is generally cured by thermosetting.
- the energy ray polymerizable compound (H) is blended in the resin film forming layer, the resin film forming layer can be cured by both heating and energy ray irradiation.
- the curing by may be performed simultaneously or sequentially.
- a resin film made of a cured resin is formed on the backside of the wafer, and the strength is improved compared to the case of a single wafer. Therefore, damage to the thinned wafer during handling can be reduced, and gettering contained in the resin film A gettering function is imparted by the agent (C). Further, compared with a coating method in which a coating solution for a resin film is directly applied to the back surface of a wafer or chip, the thickness of the resin film is excellent.
- the laminated body of the semiconductor wafer and the resin film is diced for each circuit formed on the wafer surface. Dicing is performed so as to cut both the wafer and the resin film.
- the wafer is diced by a conventional method using a dicing sheet. As a result, a semiconductor chip having a resin film on the back surface is obtained.
- the semiconductor chip by picking up the diced chip by a general means such as a collet, a semiconductor chip having a resin film on the back surface can be obtained.
- a highly uniform resin film can be easily formed on the back surface of the chip, and cracks after the dicing process and packaging are less likely to occur.
- the semiconductor device can be manufactured by mounting the semiconductor chip on a predetermined base by the face-down method.
- a semiconductor device can be manufactured by bonding a semiconductor chip having a resin film on the back surface to another member (on a chip mounting portion) such as a die pad portion or another semiconductor chip.
- Copper ion prepared by dissolving 0.805 g of copper (II) chloride dihydrate manufactured by Kanto Chemical Co., Ltd. in 1 liter of ultrapure water and further diluting 100 times with 1 g of gettering agent prepared in Examples and Comparative Examples The solution was added to 50 g of an aqueous copper chloride solution having a concentration of 3 ppm and maintained at 121 ° C., 2 atm and 24 hours. Then, it filtered using the 0.10 micrometer pore diameter membrane filter.
- the residual copper ion concentration of the aqueous copper ion solution in the filtrate was measured by atomic absorption spectrometry (measuring device: manufactured by Hitachi, Ltd., atomic absorption photometer Z5310, flame method), and the initial copper ion concentration (3 ppm) and residual From the copper ion concentration (ppm), the copper ion adsorption capacity and the copper ion adsorption rate are evaluated by the following formula.
- Copper ion adsorption capacity (%) (3 ppm-residual copper ion concentration (ppm)) x 100/3 ppm
- Copper ion adsorption rate (%) (3 ppm ⁇ residual copper ion concentration (ppm)) ⁇ solution amount (g) ⁇ 10 ⁇ 6 ⁇ 100 / sample weight (g)
- the back surface of the silicon wafer was dry-polished using a DGP 8760 manufactured by Disco Corporation (200 mm diameter, 75 ⁇ m thick, 10 nm thick crush layer).
- 1 g of copper chloride powder (manufactured by Kanto Chemical Co., Ltd., product name: copper chloride (II) dihydrate) is uniformly sprayed on the dry-polished surface of the silicon wafer (wafer back surface), and simulated reflow conditions (300 C., 30 minutes), and copper ions were diffused into the silicon wafer.
- a weak adhesive tape Adwill D-675 manufactured by Lintec after UV curing
- the resin film forming sheets for chips prepared in Examples and Comparative Examples were pasted at 40 ° C. on the back surface of the silicon wafer contaminated with copper ions.
- ultraviolet rays were irradiated (230 mW / cm 2 , 120 mJ / cm 2 ) from the release sheet surface using an ultraviolet ray irradiation device (Adwill RAD-2000 m / 12, manufactured by Lintec Corporation), and the release sheet was peeled off.
- thermosetting 140 degreeC, 1 hour
- it was put into pseudo reflow conditions 300 degreeC, 30 minutes).
- the wafer surface (mirror surface, non-sticking surface for chip resin film forming sheet) was pre-cleaned with hydrofluoric acid to remove contamination and natural oxide film (about 10 nm) adhering to the surface. Thereafter, the wafer outer periphery 10 mm was masked by being sandwiched by a Teflon (registered trademark) jig, and 5 ⁇ m from the wafer surface was etched with a nitric acid / hydrofluoric acid mixture (ratio 3: 1). The entire amount of the obtained etching solution was collected in an evaporating dish.
- Sample preparation was performed in a clean draft (class 10) installed in a clean room (class 100).
- the concentration of copper ions in the silicon wafer was quantitatively measured by ICP-MS measurement.
- the lower limit of copper ion quantification is 3.0 ⁇ 10 12 atoms / cm 3 (number of atoms per unit volume).
- the gettering performance of the chip resin film forming sheet was evaluated by measuring the concentration of copper ions eluted in the etching solution. The smaller the amount of copper ions eluted in the etching solution, the greater the amount of copper ions captured by the resin film, indicating higher gettering performance. A copper ion detection amount of 50 ⁇ 10 12 atoms / cm 3 or less was regarded as good, and a copper ion detection amount exceeding 50 ⁇ 10 12 atoms / cm 3 was regarded as defective.
- the quantitative analysis method for the copper ion concentration may be performed by a method such as atomic absorption analysis, ICP-OES, or TOF-SIMS.
- the mass reduction start temperature was measured using a differential thermal analyzer (manufactured by Shimadzu Corporation, TG / DTA analyzer DTG-60). Using the organic chelating agent prepared in Examples and Comparative Examples as a measurement sample, about 10 mg of the measurement sample was precisely weighed. The measurement sample was heated to 40 to 500 ° C. at a temperature rising temperature of 10 ° C./min, and the mass decrease start temperature was measured.
- Binder polymer component acrylic polymer comprising 55 parts by weight of n-butyl acrylate, 15 parts by weight of methyl acrylate, 20 parts by weight of glycidyl methacrylate, and 15 parts by weight of 2-hydroxyethyl acrylate (weight average molecular weight: 900,000, glass transition (Temperature: -28 ° C)
- Curing component (B1) Bisphenol A type epoxy resin (epoxy equivalent 180-200 g / eq)
- B2) Dicyclopentadiene type epoxy resin manufactured by DIC, Epicron HP-7200HH)
- Thermosetting agent Dicyandiamide (Asahi Denka Co., Adeka Hardener 3636AS)
- C Gettering agent: (C1-1) 3- (N-salicyloyl) amino-1,2,4-triazole
- Organic chelating agent organic chelating agent having a polyvalent carboxylic acid as a functional group (manufactured by Nagase ChemteX Corporation: Teclan DO, acid value 260 to 330 mg / g, mass reduction starting temperature 200 ° C.) (copper ion adsorption capacity 95 0.7%, copper ion adsorption rate 0.014%, particle size 1 ⁇ m) (C3) KW-2200 manufactured by Kyowa Chemical Industry Co., Ltd.
- Examples and Comparative Examples The above components were blended in the amounts shown in Table 1 to obtain a resin film forming layer composition.
- a release sheet (SP-PET3811, manufactured by Lintec Corporation, thickness 38 ⁇ m, surface tension 33 mN / m, melting point 200 ° C. or higher) made by removing a methyl ethyl ketone solution (solid concentration 61% by weight) of the obtained composition from silicone. After being dried on the surface to be peeled and coated to a thickness of 40 ⁇ m and dried (drying conditions: 100 ° C. in an oven for 3 minutes), a resin film forming layer is formed on the release sheet, and the resin film for chips A forming sheet was obtained.
- the gettering performance of the wafer (Reference Example 1) in which the copper ion-contaminated wafer and the wafer in which the copper ion-contaminated wafer was not attached was measured.
- the sheet for forming a resin film for a chip of the example exhibited excellent copper ion adsorption capacity, copper ion adsorption rate, and gettering performance. From this result, it was confirmed that a highly reliable semiconductor chip can be obtained by using the gettering agent (C) for the resin film forming layer.
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Abstract
Description
(1)剥離シートと、該剥離シートの剥離面上に形成された樹脂膜形成層とを有し、
該樹脂膜形成層が、バインダーポリマー成分(A)、硬化性成分(B)およびゲッタリング剤(C)を含む、チップ用樹脂膜形成用シート。
ゲッタリング剤1gを、銅イオン濃度が3ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した後の該銅イオン水溶液の銅イオン濃度を測定し、
銅イオン吸着能=(3ppm-残留銅イオン濃度(ppm))×100/3ppmより銅イオン吸着能を求める。
工程(1):樹脂膜形成層と剥離シートとを剥離、
工程(2):樹脂膜形成層を硬化、
工程(3):半導体ウエハおよび樹脂膜形成層をダイシング。
樹脂膜形成層は、バインダーポリマー成分(A)、硬化性成分(B)およびゲッタリング剤(C)を含む。
樹脂膜形成層に十分な接着性および造膜性(シート加工性)を付与するためにバインダーポリマー成分(A)が用いられる。バインダーポリマー成分(A)としては、従来公知のアクリルポリマー、ポリエステル樹脂、ウレタン樹脂、アクリルウレタン樹脂、シリコーン樹脂、ゴム系ポリマー等を用いることができる。
硬化性成分(B)は、熱硬化性成分および熱硬化剤が用いられる。熱硬化性成分としては、たとえば、エポキシ樹脂が好ましい。
ゲッタリング剤(C)は、銅イオンなどの金属イオンを捕捉する作用を有する限り特に限定はされないが、好ましくは重金属不活性化剤(C1)、有機キレート剤(C2)および銅イオン捕捉金属化合物(C3)からなる群から選ばれる少なくとも1種が用いられる。樹脂膜形成層にゲッタリング剤(C)を配合することで、樹脂膜形成層にはゲッタリング機能が付与され、半導体装置内にゲッタリングサイトが導入される。
重金属不活性化剤は、触媒残渣などの金属によって、プラスチックが劣化することを防止するために、各種のプラスチックに少量配合される添加剤である。重金属不活性化剤は、金属成分を捕捉することで、その作用を軽減しプラスチックの劣化を防止していると考えられている。このような重金属不活性化剤としては、無機系あるいは有機系の各種不活性化剤が知られているが、本発明では、有機系重金属不活性化剤を使用することが好ましい。有機系重金属不活性化剤は、樹脂膜形成層中における分散性に優れる。
3-(N-サリチロイル)アミノ-1,2,4-トリアゾール(ADEKA社製、CDA-1、CAS No. 36411-52-6)
有機キレート剤(C2)は、特に限定されないが、多価カルボン酸を官能基として有し、その酸価が100~600mg/gであることが好ましく、260~330mg/gであることがより好ましい。有機キレート剤(C2)の酸価が100mg/gよりも小さいと、目的とするゲッタリング機能が不十分であり、600mg/gよりも大きいと塩基系熱硬化剤と相互作用を起こす場合がある。
銅イオン捕捉金属化合物(C3)は、銅イオンを捕捉する効果がある。たとえばアンチモン、ビスマス、マグネシウム、アルミニウム等の酸化物、水酸化物、硝酸塩および炭酸塩が挙げられる。これらは少量で効果が得られる点で好ましい。その例として、好ましくは、アンチモン酸化物、ビスマス酸化物、およびこれらの混合物、ならびにマグネシウム・アルミニウム系酸化物であるハイドロタルサイトおよびその焼成物が挙げられる。なお、ハイドロタルサイト中のAlは、Cr またはFeに置換されていてもよい。
樹脂膜形成層には、着色剤(D)を配合することができる。着色剤を配合することで、半導体装置を機器に組み込んだ際に、周囲の装置から発生する赤外線等による半導体装置の誤作動を防止することができる。着色剤としては、有機または無機の顔料および染料が用いられる。これらの中でも電磁波や赤外線遮蔽性の点から黒色顔料が好ましい。黒色顔料としては、カーボンブラック、酸化鉄、二酸化マンガン、アニリンブラック、活性炭等が用いられるが、これらに限定されることはない。半導体装置の信頼性を高める観点からは、カーボンブラックが特に好ましい。着色剤(D)の配合量は、樹脂膜形成層を構成する全固形分100重量部に対して、好ましくは0.1~35重量部、さらに好ましくは0.5~25重量部、特に好ましくは1~15重量部である。
樹脂膜形成層は、上記バインダーポリマー成分(A)、硬化性成分(B)、ゲッタリング剤(C)、着色剤(D)に加えて下記成分を含むことができる。
硬化促進剤(E)は、樹脂膜形成層の硬化速度を調整するために用いられる。硬化促進剤(E)は、特に、硬化性成分(B)において、エポキシ樹脂と熱硬化剤とを併用する場合に好ましく用いられる。
カップリング剤(F)は、樹脂膜形成層のチップに対する接着性、密着性を向上させるために用いてもよい。また、カップリング剤(F)を使用することで、樹脂膜形成層を硬化して得られる樹脂膜の耐熱性を損なうことなく、その耐水性を向上することができる。
無機充填材(G)を樹脂膜形成層に配合することにより、硬化後の樹脂膜における熱膨張係数を調整することが可能となり、半導体チップに対して硬化後の樹脂膜の熱膨張係数を最適化することで半導体装置の信頼性を向上させることができる。また、硬化後の樹脂膜の吸湿率を低減させることも可能となる。
樹脂膜形成層において、エネルギー線重合性化合物が配合されていてもよい。エネルギー線重合性化合物(H)は、エネルギー線重合性基を含み、紫外線、電子線等のエネルギー線の照射を受けると重合硬化する。このようなエネルギー線重合性化合物(H)として具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレートあるいは1,4-ブチレングリコールジアクリレート、1,6-ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、オリゴエステルアクリレート、ウレタンアクリレート系オリゴマー、エポキシ変性アクリレート、ポリエーテルアクリレートおよびイタコン酸オリゴマーなどのアクリレート系化合物が挙げられる。このような化合物は、分子内に少なくとも1つの重合性二重結合を有し、通常は、重量平均分子量が100~30000、好ましくは300~10000程度である。エネルギー線重合性化合物(H)の配合量は、特に限定はされないが、樹脂膜形成層を構成する全固形分100重量部に対して、1~50重量部程度の割合で用いることが好ましい。
樹脂膜形成層が、前述したエネルギー線重合性化合物(H)を含有する場合には、その使用に際して、紫外線等のエネルギー線を照射して、エネルギー線重合性化合物を硬化させる。この際、該組成物中に光重合開始剤(I)を含有させることで、重合硬化時間ならびに光線照射量を少なくすることができる。
樹脂膜形成層には、熱可塑性樹脂(J)を配合してもよい。熱可塑性樹脂(J)は、硬化後の樹脂膜の可とう性を保持するために配合される。熱可塑性樹脂(J)としては、重量平均分子量が1000~10万のものが好ましく、3000~8万のものがさらに好ましい。上記範囲の熱可塑性樹脂(J)を含有することにより、半導体ウエハまたはチップへの樹脂膜形成層の転写時における剥離シートと樹脂膜形成層との層間剥離を容易に行うことができ、さらに転写面に樹脂膜形成層が追従しボイドなどの発生を抑えることができる。
樹脂膜形成層の初期接着力および凝集力を調節するために、架橋剤を添加することもできる。架橋剤(K)としては有機多価イソシアネート化合物、有機多価イミン化合物などが挙げられる。
樹脂膜形成層には、上記の他に、必要に応じて各種添加剤が配合されてもよい。各種添加剤としては、可塑剤、帯電防止剤、酸化防止剤などが挙げられる。
樹脂膜形成層は、上記各成分を適宜の割合で、適当な溶媒中で混合してなる樹脂膜形成層用組成物を、剥離シート上に塗布乾燥して得られる。また、剥離シートとは別の工程フィルム上に樹脂膜形成層用組成物を塗布、乾燥して成膜し、これを剥離シート上に転写してもよい。
次に本発明に係るチップ用樹脂膜形成用シートの利用方法について、該シートを半導体チップの製造に適用した場合を例にとって説明する。
工程(1):樹脂膜形成層と剥離シートとを剥離、
工程(2):樹脂膜形成層を硬化、
工程(3):半導体ウエハおよび樹脂膜形成層をダイシング。
実施例および比較例で準備したゲッタリング剤1gを、超純水1lに関東化学社製塩化銅(II)二水和物0.805gを溶解し、さらに100倍に希釈して作成した銅イオン濃度が3ppmの塩化銅水溶液50gに投入し、121℃、2気圧、24時間の条件に保った。その後、孔径0.10μmメンブレンフィルターを用いてろ過した。ろ液中の該銅イオン水溶液の残留銅イオン濃度を原子吸光分析法(測定装置:日立製作所社製、原子吸光光度計Z5310、フレーム法)により測定し、初期銅イオン濃度(3ppm)と、残留銅イオン濃度(ppm)とから、下記式により銅イオン吸着能および銅イオン吸着率を評価する。
ディスコ社製DGP8760を用いて、シリコンウエハの裏面をドライポリッシュ処理した(200mm径、厚さ75μm、破砕層の厚み10nm)。シリコンウエハのドライポリッシュ処理した面(ウエハ裏面)に、塩化銅(II)粉末(関東化学社製、品名:塩化銅(II)二水和物)1gを均一に散布し、擬似リフロー条件(300℃、30分)に投入し、シリコンウエハ内に銅イオンを拡散させた。その後、ウエハ裏面に弱粘着テープ(紫外線硬化後のリンテック社製Adwill D-675)を貼付・剥離を繰り返し、ウエハ裏面から塩化銅(II)粉末を除去した。
装置:パーキンエルマー社製 ELAN6100DRC Plus
条件等 :プラズマパワー1500W。銅イオン定量下限は、3.0×1012atoms/cm3(単位体積あたりの原子数)。
質量減少開始温度の測定は、示差熱分析装置(島津製作所社製、TG/DTA分析器DTG-60)を用いて行った。実施例および比較例で準備した有機キレート剤を測定試料とし、約10mgの測定試料を精密に秤量した。測定試料を昇温温度10℃/分にて40~500℃まで昇温し、質量減少開始温度を測定した。
樹脂膜形成層を構成する各成分を下記に示す。
(A)バインダーポリマー成分:n-ブチルアクリレート55重量部、メチルアクリレート15重量部、グリシジルメタクリレート20重量部、及び2-ヒドロキシエチルアクリレート15重量部からなるアクリルポリマー(重量平均分子量:90万、ガラス転移温度:-28℃)
(B)硬化性成分:
(B1)ビスフェノールA型エポキシ樹脂(エポキシ当量180-200g/eq)
(B2)ジシクロペンタジエン型エポキシ樹脂(DIC社製、エピクロンHP-7200HH)
(B3)熱硬化剤:ジシアンジアミド(旭電化社製、アデカハードナー3636AS)
(C)ゲッタリング剤:
(C1-1)3-(N-サリチロイル)アミノ-1,2,4-トリアゾール(ADEKA社製、CDA-1、CAS No. 36411-52-6) (銅イオン吸着能99.7%、銅イオン吸着率0.015%、粒径1μm)
(C3)協和化学工業社製KW-2200(マグネシウムとアルミニウムの酸化物からなるハイドロタルサイト) (銅イオン吸着能99.8%、銅イオン吸着率0.015%、粒径1μm)
(D)着色剤:黒色顔料(カーボンブラック、三菱化学社製、#MA650、平均粒径28nm)
(E)硬化促進剤:イミダゾール(四国化成工業社製、キュアゾール2PHZ)
(F)カップリング剤:A-1110(日本ユニカー社製)
(G)無機充填剤:シリカフィラー(熔融石英フィラー、平均粒径8μm)
上記各成分を表1に記載の量で配合し、樹脂膜形成層用組成物を得た。得られた組成物のメチルエチルケトン溶液(固形濃度61重量%)を、シリコーンで剥離処理された剥離シート(リンテック株式会社製、SP-PET3811、厚さ38μm、表面張力33mN/m、融点200℃以上)の剥離処理面上に乾燥後40μmの厚みになるように塗布、乾燥(乾燥条件:オーブンにて100℃、3分間)して、剥離シート上に樹脂膜形成層を形成し、チップ用樹脂膜形成用シートを得た。
実施例のチップ用樹脂膜形成用シートは、優れた銅イオン吸着能、銅イオン吸着率、ゲッタリング性能を示した。この結果から、ゲッタリング剤(C)を樹脂膜形成層に用いることで、高信頼性の半導体チップが得られることが確認された。
Claims (10)
- 剥離シートと、該剥離シートの剥離面上に形成された樹脂膜形成層とを有し、
該樹脂膜形成層が、バインダーポリマー成分(A)、硬化性成分(B)およびゲッタリング剤(C)を含む、チップ用樹脂膜形成用シート。 - ゲッタリング剤(C)が、重金属不活性化剤(C1)、有機キレート剤(C2)および銅イオン捕捉金属化合物(C3)からなる群から選ばれる請求項1に記載のチップ用樹脂膜形成用シート。
- 下記により定義されるゲッタリング剤(C)の銅イオン吸着能が30%以上である請求項1または2に記載のチップ用樹脂膜形成用シート:
ゲッタリング剤1gを、銅イオン濃度が3ppmの塩化銅水溶液50gに投入し、121℃、2気圧下、24時間放置した後の該銅イオン水溶液の銅イオン濃度を測定し、
銅イオン吸着能=(3ppm-残留銅イオン濃度(ppm))×100/3ppmより銅イオン吸着能を求める。 - 該樹脂膜形成層が、さらに着色剤(D)を含有する請求項1~3の何れかに記載のチップ用樹脂膜形成用シート。
- 該樹脂膜形成層を構成する全固形分100重量部あたりゲッタリング剤(C)を1~35重量部含有する請求項1~4の何れかに記載のチップ用樹脂膜形成用シート。
- 該樹脂膜形成層が、半導体ウエハまたはチップの保護膜である請求項1~5の何れかに記載のチップ用樹脂膜形成用シート。
- 表面に回路が形成された半導体ウエハの裏面に、請求項1~6の何れかに記載のチップ用保護膜形成用シートの樹脂膜形成層を貼付し、裏面に樹脂膜を有する半導体チップを得ることを特徴とする半導体チップの製造方法。
- 以下の工程(1)~(3)をさらに含み、工程(1)~(3)を任意の順で行うことを特徴とする請求項7に記載の半導体チップの製造方法:
工程(1):樹脂膜形成層と剥離シートとを剥離、
工程(2):樹脂膜形成層を硬化、
工程(3):半導体ウエハおよび樹脂膜形成層をダイシング。 - 該半導体ウエハが、裏面研削後、裏面研削により生じた破砕層を厚み50nm以下にまで低減されたものである請求項7または8に記載の半導体チップの製造方法。
- 該樹脂膜が、半導体チップの保護膜である請求項7~9の何れかに記載の半導体チップの製造方法。
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JP6042251B2 (ja) * | 2013-03-28 | 2016-12-14 | リンテック株式会社 | 粘着シート |
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