CN102834903B - 芯片用树脂膜形成用片材及半导体芯片的制造方法 - Google Patents

芯片用树脂膜形成用片材及半导体芯片的制造方法 Download PDF

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CN102834903B
CN102834903B CN201180017214.4A CN201180017214A CN102834903B CN 102834903 B CN102834903 B CN 102834903B CN 201180017214 A CN201180017214 A CN 201180017214A CN 102834903 B CN102834903 B CN 102834903B
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resin film
resin molding
chip
layer
copper ion
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CN102834903A (zh
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篠田智则
若山洋司
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Lintec Corp
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Lintec Corp
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN201180017214.4A 2010-03-31 2011-03-30 芯片用树脂膜形成用片材及半导体芯片的制造方法 Active CN102834903B (zh)

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CN201410156191.0A CN103903980B (zh) 2010-03-31 2011-03-30 芯片用树脂膜形成用片材及半导体芯片的制造方法

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Application Number Priority Date Filing Date Title
JP2010083690A JP5023179B2 (ja) 2010-03-31 2010-03-31 チップ用樹脂膜形成用シートおよび半導体チップの製造方法
JP2010-083690 2010-03-31
PCT/JP2011/057969 WO2011125711A1 (ja) 2010-03-31 2011-03-30 チップ用樹脂膜形成用シートおよび半導体チップの製造方法

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CN102834903B true CN102834903B (zh) 2014-10-22

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CN201410156191.0A Active CN103903980B (zh) 2010-03-31 2011-03-30 芯片用树脂膜形成用片材及半导体芯片的制造方法

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US (2) US8674349B2 (enExample)
JP (1) JP5023179B2 (enExample)
KR (1) KR101311661B1 (enExample)
CN (2) CN102834903B (enExample)
TW (1) TWI413588B (enExample)
WO (1) WO2011125711A1 (enExample)

Cited By (1)

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CN103903980A (zh) * 2010-03-31 2014-07-02 琳得科株式会社 芯片用树脂膜形成用片材及半导体芯片的制造方法

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JP2012241063A (ja) * 2011-05-17 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着シート
JP2012241157A (ja) * 2011-05-23 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着剤組成物、及び、半導体装置製造用の接着シート
JP5804820B2 (ja) * 2011-07-25 2015-11-04 日東電工株式会社 半導体装置製造用の接着シート、半導体装置製造用の接着シートを有する半導体装置、及び、半導体装置の製造方法
JP5975621B2 (ja) 2011-11-02 2016-08-23 リンテック株式会社 ダイシングシートおよび半導体チップの製造方法
WO2013133268A1 (ja) * 2012-03-07 2013-09-12 リンテック株式会社 チップ用樹脂膜形成用シート
CN104871310B (zh) * 2012-11-30 2018-03-09 琳得科株式会社 芯片用树脂膜形成用片及半导体装置的制造方法
JP6042251B2 (ja) * 2013-03-28 2016-12-14 リンテック株式会社 粘着シート
WO2015146714A1 (ja) * 2014-03-28 2015-10-01 リンテック株式会社 保護膜形成用フィルム及び保護膜付き半導体チップの製造方法
WO2015150848A1 (fr) 2014-03-31 2015-10-08 Arcelormittal Investigación Y Desarrollo Sl Procede de fabrication a haute productivite de pieces d'acier revêtues et durcies a la presse
WO2016122264A1 (ko) 2015-01-29 2016-08-04 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치
WO2016122263A1 (ko) 2015-01-29 2016-08-04 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치
EP3422399B1 (en) * 2017-06-29 2024-07-31 Infineon Technologies AG Method for producing a device for protecting a semiconductor module and semiconductor module comprising said device
JP6934989B2 (ja) * 2019-08-29 2021-09-15 住友化学株式会社 有機光電変換材料
JP7757672B2 (ja) * 2021-09-14 2025-10-22 株式会社レゾナック 樹脂フィルムの重金属イオン透過性の評価方法及び接着フィルム

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CN1684225A (zh) * 2001-03-21 2005-10-19 琳得科株式会社 形成芯片保护膜的片材

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* Cited by examiner, † Cited by third party
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CN103903980A (zh) * 2010-03-31 2014-07-02 琳得科株式会社 芯片用树脂膜形成用片材及半导体芯片的制造方法
CN103903980B (zh) * 2010-03-31 2017-01-18 琳得科株式会社 芯片用树脂膜形成用片材及半导体芯片的制造方法

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