WO2011122480A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- WO2011122480A1 WO2011122480A1 PCT/JP2011/057390 JP2011057390W WO2011122480A1 WO 2011122480 A1 WO2011122480 A1 WO 2011122480A1 JP 2011057390 W JP2011057390 W JP 2011057390W WO 2011122480 A1 WO2011122480 A1 WO 2011122480A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- light emitting
- emitting device
- layer
- support substrate
- Prior art date
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
Definitions
- the present invention relates to a light emitting device.
- an organic electroluminescence element hereinafter sometimes referred to as an organic EL element
- the organic EL element Since the organic EL element generates heat during use, the temperature of the organic EL element itself rises. The increase in the temperature of the organic EL element when using the light emitting device promotes the deterioration of the organic EL element itself.
- various heat dissipation measures for suppressing the temperature rise of the organic EL element which is a light emitting source in the light emitting device have been studied.
- a heat dissipation measure in such a light emitting device conventionally, for example, a heat radiating member having high thermal diffusibility is provided on an organic EL element.
- the heat radiating member in order to increase the heat diffusibility of the heat radiating member, is formed of a metal having high heat diffusibility, and the surface of the heat radiating member is formed with unevenness in order to increase its surface area (for example, (See Patent Document 1).
- an object of the present invention is to provide a light emitting device having high heat dissipation characteristics.
- the present invention provides the following light emitting device.
- a support substrate An organic electroluminescence element configured by laminating a first electrode, one or more organic electroluminescence layers, and a second electrode in this order on the support substrate;
- a first extraction electrode extending from the first electrode on the support substrate and electrically connected to an external power supply;
- a second extraction electrode disposed on the support substrate and spaced apart from the first electrode and the first extraction electrode, and electrically connected to an external power supply source;
- a connection electrode extending from the second electrode on the support substrate and connected to the second extraction electrode; and a support electrode extending from the second electrode on the support substrate, the first electrode and the first electrode A first heat dissipating part electrically insulated from the extraction electrode;
- a light emitting device a support substrate;
- An organic electroluminescence element configured by laminating a first electrode, one or more organic electroluminescence layers, and a second electrode in this order on the support substrate;
- a first extraction electrode extending from the first electrode on the support substrate
- FIG. 1A is a plan view schematically showing the light emitting device 1 according to the first embodiment of the present invention.
- FIG. 1B is a cross-sectional view of the light emitting device 1 according to the first embodiment of the present invention, as viewed from the section line II-II in FIG. 1A.
- FIG. 1C is a cross-sectional view of the light emitting device 1 according to the first embodiment of the present invention, as viewed from the section line III-III in FIG. 1A.
- FIG. 2A is a plan view schematically showing the light emitting device 1 according to the second embodiment of the present invention.
- FIG. 2B is a cross-sectional view of the light emitting device 1 according to the second embodiment of the present invention as seen from the section line II-II in FIG. 2A.
- FIG. 2C is a cross-sectional view of the light emitting device 1 according to the second embodiment of the present invention as seen from the section line III-III in FIG. 2A.
- FIG. 3A is a plan view schematically showing a light emitting device 1 according to a third embodiment of the present invention.
- FIG. 3B is a cross-sectional view of the light emitting device 1 according to the third embodiment of the present invention as seen from the section line II-II in FIG. 3A.
- FIG. 3C is a cross-sectional view of the light emitting device 1 according to the third embodiment of the present invention, as viewed from the section line III-III in FIG. 3A.
- FIG. 4A is a plan view schematically showing a light emitting device 1 according to a fourth embodiment of the present invention.
- FIG. 4B is a cross-sectional view of the light emitting device 1 according to the fourth embodiment of the present invention as seen from the section line II-II in FIG. 4A.
- FIG. 4C is a cross-sectional view of the light emitting device 1 according to the fourth embodiment of the present invention as seen from the section line III-III in FIG. 4A.
- FIG. 5A is a plan view schematically showing a light emitting device 1 according to a fifth embodiment of the present invention.
- FIG. 5B is a cross-sectional view of the light emitting device 1 according to the fifth embodiment of the present invention as seen from the section line II-II in FIG. 5A.
- FIG. 5C is a cross-sectional view of the light emitting device 1 according to the fifth embodiment of the present invention as seen from the section line III-III in FIG. 5A.
- the light emitting device of the present invention includes a support substrate, an organic EL element configured by laminating a first electrode, one or more organic EL layers and a second electrode in this order on the support substrate, and the support substrate.
- a first extraction electrode that extends from the first electrode and is electrically connected to an external power supply source, and the first electrode and the first extraction electrode are separated from each other on the support substrate.
- a second extraction electrode disposed and electrically connected to an external power supply source; a connection electrode extending from the second electrode on the support substrate and connected to the second extraction electrode; And it has the 1st thermal radiation part extended from the said 2nd electrode on the support substrate, and being electrically insulated from the said 1st electrode and the said 1st extraction electrode.
- FIG. 1A, 1B, and 1C are diagrams schematically showing a light emitting device 1 according to a first embodiment of the present invention.
- 1A is a plan view of the light-emitting device 1
- FIG. 1B is a cross-sectional view of the light-emitting device 1 as seen from the section line II-II in FIG. 1A
- FIG. 1C is a view from the section line III-III in FIG. 2 is a cross-sectional view of the light emitting device 1.
- the light emitting device may include only one organic EL element or may include a plurality of organic EL elements. In the present embodiment, a configuration of a light emitting device including one organic EL element will be described as an example.
- the light emitting device 1 includes a support substrate 2 and an organic EL element 3 provided on the support substrate 2.
- the organic EL element 3 is configured by laminating a first electrode 4, an organic EL layer 5, and a second electrode 6 on the support substrate 2 in this order.
- a portion where all the layers constituting the organic EL element 3 overlap is referred to as the organic EL element 3 when viewed from one side in the thickness direction Z of the support substrate 2 (hereinafter sometimes referred to as “plan view”). That is, in this specification, a portion where all the layers of the first electrode 4, the organic EL layer 5, and the second electrode 6 are laminated, and a portion where light emission occurs when viewed from one side in the thickness direction Z of the support substrate 2.
- the organic EL element 3 is called.
- the light-emitting device of the present invention is provided with members extending from the first electrode 4 and the second electrode 6, but in this specification, only the portion that functions as the electrode of the organic EL element 3 is the first. They are referred to as electrode 4 and second electrode 6.
- electrode 4 and second electrode 6 the names of the members extending from the first electrode 4 and the second electrode 6 and not constituting a part of the organic EL element are distinguished from the first electrode 4 and the second electrode. write.
- One of the first electrode 4 and the second electrode 6 is composed of an electrode exhibiting optical transparency.
- the present invention is applicable to the case where the first electrode 4 uses an organic EL element constituted by a light transmissive electrode and the second electrode 6 uses an organic EL element constituted by a light transmissive electrode. Can also be applied.
- an organic EL element in which the first electrode 4 is configured by an electrode exhibiting optical transparency will be described. That is, a so-called bottom emission type organic EL element in which light is emitted from the light emitting device to the outside through the first electrode 4 and the support substrate 2 will be described.
- the support substrate also needs to be constituted by a member exhibiting light transmittance.
- the organic EL element 3 includes one or more organic EL layers 5.
- the organic EL layer means all layers sandwiched between the first electrode 4 and the second electrode 6.
- the organic EL element 3 includes at least one light emitting layer as the organic EL layer 5. Further, not only the light emitting layer but also a predetermined layer is provided between the electrodes 4 and 6 as necessary.
- a hole injection layer, a hole transport layer, an electron block layer, and the like are provided as an organic EL layer between the anode and the light emitting layer.
- a hole blocking layer, an electron transport layer, an electron injection layer, and the like are provided as an organic EL layer between the light emitting layer and the cathode.
- the organic EL layer 5 in the present embodiment is provided not only on the first electrode 4 but also extends from the outer edge of the first electrode 4. That is, the organic EL layer 5 is formed so as to cover the first electrode 4 in plan view.
- the organic EL layer 5 having such a shape, it is possible to prevent an electrically conductive member such as the first electrode 4 from conducting undesirably with other members as will be described later.
- the light emitting device 1 further includes a first extraction electrode 7.
- the first extraction electrode 7 functions as an electrode electrically connected to an external power supply source.
- the first extraction electrode 7 is provided extending from the first electrode 4 on the support substrate 2. That is, the first extraction electrode 7 is formed integrally with the first electrode 4.
- the first extraction electrode 7 is electrically connected to an external power supply source by a connector, a bonding wire, or the like.
- power from the power supply source is supplied to the first electrode 4 via the first extraction electrode 7.
- the direction in which the first extraction electrode 7 extends from the first electrode 4 may be referred to as a first direction X.
- the light emitting device 1 further includes a second extraction electrode 8.
- the second extraction electrode 8 functions as an electrode that is electrically connected to an external power supply source.
- the second extraction electrode 8 is disposed on the support substrate 2 so as to be separated from the first electrode 4 and the first extraction electrode 7, and is electrically insulated from the first electrode 4 and the first extraction electrode 7.
- the second extraction electrode 8 is disposed at a predetermined interval in the first direction X with respect to the first electrode 4.
- the second extraction electrode 8 extends in the first direction X and also extends in the second direction Y perpendicular to the first direction X.
- the first direction X and the second direction Y are directions perpendicular to each other, and each means a direction perpendicular to the thickness direction Z of the support substrate 2.
- the light emitting device 1 further includes a connection electrode 9 for connecting the second electrode 6 and the second extraction electrode 8.
- the connection electrode 9 extends from the second electrode 6 and is connected to the second extraction electrode 8.
- the connection electrode 9 is provided so as to extend in the first direction X from the end of the second electrode 6 in the first direction X onto the second extraction electrode 8. That is, the connection electrode 9 is formed integrally with the second electrode 6. In this way, the connection electrode 9 extends from the second electrode 6 to the second extraction electrode 8, whereby the second electrode 6 and the second extraction electrode 8 are electrically connected via the connection electrode 9. .
- the organic EL layer 5 is formed so as to cover the first electrode 4. Therefore, as shown in FIG.
- the organic EL layer 5 is interposed between the connection electrode 9 and the first electrode 4.
- the organic EL layer 5 is interposed between the connection electrode 9 and the first electrode 4.
- the second extraction electrode 8 is electrically connected to an external power supply source. As a result, predetermined power is supplied to the second electrode 6 from an external power supply source via the second extraction electrode 8 and the connection electrode 9.
- the light emitting device 1 further includes a first heat radiating portion 10 extending from the second electrode 6 on the support substrate 2.
- the first heat radiating portion 10 includes a member 10 a extending from one end portion in the second direction Y of the second electrode 6 to one side in the second direction Y. And a member 10b extending from the other end of the second electrode 6 in the second direction Y to the other of the second direction Y.
- the members 10 a and 10 b of the first heat radiating unit 10 are formed integrally with the second electrode 6. 1C, the members 10a and 10b are provided in contact with the support substrate 2 in this embodiment.
- the organic EL layer 5 is formed so as to cover the first electrode 4.
- the organic EL layer 5 is interposed between the first heat radiation part 10 and the first electrode 4.
- the first heat radiating portion 10 formed integrally with the second electrode 6 is prevented from being physically and electrically connected to the first electrode 4. be able to.
- the first heat radiating portion 10 is formed at a position that does not overlap the first extraction electrode 7 in a plan view. Therefore, the first heat radiating portion 10 is electrically insulated from the first electrode 4 and the first extraction electrode 7.
- the light emitting device 1 of the present embodiment has the first heat radiating portion 10 extending from the second electrode 6.
- the organic EL element 3 generates heat.
- the heat generated in the element 3 diffuses from the second electrode 6 to the outside and also to the first heat radiating portion 10.
- the heat diffused to the first heat radiating portion 10 is further diffused from the first heat radiating portion 10 to the outside.
- part of the heat diffused to the first heat radiating portion 10 diffuses to the support substrate 2 and diffuses from the support substrate 2 to the outside.
- fever produced in the organic EL element 3 can be efficiently spread
- the temperature rise of the organic EL element 3 can be suppressed.
- a light-emitting device may enlarge.
- the first heat radiating part 10 in an vacant space provided inevitably in the design of the light emitting device, it is possible to suppress an increase in size of the light emitting device due to the provision of the first heat radiating part 10.
- the organic EL element is not provided on the entire surface of the support substrate. Therefore, a space where the first heat radiating portion 10 can be provided can be secured by devising the design of the wiring or the like. For example, an increase in the size of the apparatus can be suppressed by providing the first heat radiating portion 10 in such a space.
- the first heat radiating portion 10 is composed of a member having excellent heat conduction characteristics.
- the heat conduction characteristics of the first heat radiating portion 10 are the same as those of the second electrode 6 formed integrally. Therefore, it is preferable to configure the second electrode 6 with a member having excellent heat conduction characteristics. Further, since the heat generated in the organic EL element 3 is guided from the second electrode 6 to the first heat radiating portion 10 and diffused to the outside, the product of the thermal conductivity and the film thickness is second than that of the first electrode. It is preferable that the electrode is larger.
- the product ratio (P2 / P1) is 1 is preferably exceeded. More preferably, the product ratio (P2 / P1) is 1.4 or more, more preferably 5 or more, more preferably 10 or more, and even more preferably 18 or more.
- the first electrode 4 is composed of an electrode exhibiting optical transparency. In general, the product of the thermal conductivity and the film thickness is higher for the conductive material constituting the second electrode that does not require light transmittance than the conductive material constituting the first electrode exhibiting light transmittance.
- the product of the thermal conductivity and the film thickness is usually larger in the second electrode than in the first electrode. Therefore, in the bottom emission type organic EL element, the first heat radiating portion 10 can be constituted by a member having excellent heat conduction characteristics without special design.
- the second electrode preferably has a thermal conductivity of 30 W / (m ⁇ K) or more. Therefore, the thermal conductivity of the first heat radiation portion formed integrally with the second electrode is preferably 30 W / (m ⁇ K) or more.
- the heat dissipation characteristic of a light-emitting device can be improved by comprising a 2nd electrode and a 1st thermal radiation part with a member with high heat conductivity.
- the second electrode and the first heat radiation part of 30 W / (m ⁇ K) or more include, for example, aluminum (Al), copper (Cu), silver (Ag), gold (Au), iron (Fe), silicon (Si) And a thin film containing carbon (C).
- the film thickness of the second electrode 6 is preferably 100 nm or more. Therefore, the film thickness of the first heat radiating portion 10 formed integrally with the second electrode 6 is also preferably 100 nm or more. Thus, by increasing the film thickness of the second electrode 6 and the first heat radiating portion 10, the thermal conductivity of the second electrode 6 and the first heat radiating portion 10 can be increased. It is possible to conduct heat efficiently. From the viewpoint of heat dissipation characteristics, the upper limit is not particularly set for the film thickness of the second electrode 6 and the first heat dissipation portion 10. However, considering the time required for forming the second electrode 6 and the first heat radiating portion 10, the upper limit of the film thickness of the second electrode 6 and the first heat radiating portion 10 is about 200 ⁇ m.
- the support substrate 2 is prepared.
- a substrate exhibiting optical transparency is used as the support substrate 2.
- the support substrate 2 for example, a glass plate, a plastic plate, a polymer film, a silicon plate, and a laminate of these are used.
- the first electrode 4, the first extraction electrode 7, and the second extraction electrode 8 are formed on the support substrate 2. These can be formed, for example, by forming a conductive thin film on the support substrate 2 and patterning the conductive thin film into a predetermined shape by photolithography.
- the first electrode 4, the first extraction electrode 7, and the second extraction electrode 8 are preferably formed from the same member. This is because the first electrode 4, the first extraction electrode 7, and the second extraction electrode 8 can be formed in the same process, so that the process required for manufacturing the device can be simplified.
- the 1st electrode 4, the 1st extraction electrode 7, and the 2nd extraction electrode 8 can be formed with the member which comprises the anode or cathode mentioned later, for example.
- the first extraction electrode 7 and the second extraction electrode 8 are constituted by members having good adhesion to the support substrate 2.
- the sealing is performed by first preparing a predetermined sealing substrate, then placing an adhesive on the peripheral edge of the sealing substrate, and further bonding the sealing substrate to the support substrate. Even if the sealing substrate and the support substrate are bonded together in this way, if the adhesion between the first extraction electrode 7 and the second extraction electrode 8 and the support substrate 2 is poor, the first extraction electrode 7 and the second extraction electrode 7 The extraction electrode 8 may reduce the airtightness in the sealing region.
- the hermeticity in the sealing region is increased when the sealing is performed.
- materials having high adhesion to the glass substrate include, for example, indium tin oxide (abbreviated as ITO), chromium (Cr), or molybdenum (Mo).
- ITO indium tin oxide
- Cr chromium
- Mo molybdenum
- the organic EL layer 5 is formed. As described above, the organic EL layer 5 is formed so as to cover the first electrode 4.
- the part (1st extraction electrode 7) extended from the 1st electrode 4 by planar view is a predetermined member (The 2nd electrode 6, the connection electrode 9, the 2nd extraction electrode 8, and the 1st thermal radiation part 10). It may be formed so as to ensure electrical insulation between them. Therefore, when two or more organic EL layers 5 are provided, all the organic EL layers may be formed so as to cover the first electrode 4 in a plan view. Only the high organic EL layer may be formed so as to cover the first electrode 4 in plan view, and the other organic EL layer may be formed only on the first electrode 4.
- the second electrode 6, the connection electrode 9, and the first heat radiation part 10 are formed. These can be formed, for example, by placing a mask having an opening formed at a predetermined portion on the support substrate 2 and depositing a predetermined material through the mask.
- the 2nd electrode 6, the connection electrode 9, and the 1st thermal radiation part 10 can be formed, for example with the material which comprises the anode or cathode mentioned later.
- the first heat radiating portion 10 and the first extraction electrode 7 are arranged so as not to overlap each other in plan view. Therefore, in the first embodiment, electrical insulation between the first heat radiating portion 10 and the first extraction electrode 7 can be ensured without specially disposing an insulating member. However, from the viewpoint of heat dissipation characteristics, it is preferable to extend the first extraction electrode 7 to a position overlapping the first heat dissipation portion 10 in plan view.
- 2A, 2B, and 2C are diagrams schematically showing the light emitting device 1 in a form in which the first extraction electrode 7 is extended to a position where it overlaps the first heat radiating portion 10, that is, the members 10a and 10b.
- FIG. 2A is a plan view of the light-emitting device 1 according to the second embodiment of the present invention
- FIG. 2B is a cross-sectional view of the light-emitting device 1 taken along the section line II-II in FIG. 2A
- FIG. FIG. 3 is a cross-sectional view of the light-emitting device 1 as viewed from the section line III-III.
- a part of the components of the light-emitting device of the first embodiment shown in FIGS. 1A, 1B, and 1C is used.
- the shape of the element (for example, the first extraction electrode 7) is different.
- FIGS. 1A, 1B, and 1C are also used in FIGS. 2A, 2B, and 2C.
- the reference numerals shown in FIGS. 1A, 1B, and 1C are also used in FIGS. 2A, 2B, and 2C.
- a portion corresponding to the light emitting device 1 of the first embodiment shown in FIGS. 1A, 1B, and 1C are attached, and repeated description may be omitted.
- the light emitting device 1 of the second embodiment shown in FIGS. 2A, 2B, and 2C has a first extraction electrode 7 with respect to the light emitting device 1 of the first embodiment shown in FIGS. 1A, 1B, and 1C.
- the structure of is different.
- the light emitting device of the second embodiment further includes an electrical insulating film 11 that is required due to the difference in the shape of the first extraction electrode 7.
- the first extraction electrode 7 in the second embodiment is formed so as to extend from the remaining peripheral edge portion of the peripheral edge portion of the first electrode 4 excluding the end portion on the second extraction electrode 8 side.
- the first extraction electrode 7 is formed so as to extend in the second direction Y from one end and the other end in the second direction Y of the first electrode 4.
- a portion extending in the second direction Y from the first electrode 4 overlaps the first heat radiating portion 10 (members 10 a and 10 b) in plan view.
- at least a part of the first heat radiation part 10 overlaps the first extraction electrode 7 in plan view.
- the electrical insulating film 11 is formed before the step of forming the second electrode 6.
- the electrical insulating film 11 may be formed after the organic EL layer 5 is formed, or may be formed before the organic EL layer 5 is formed.
- the electrical insulating film 11 is preferably formed before the organic EL layer 5 is formed. This is because the organic EL layer 5 can be prevented from being damaged when the electrical insulating film 11 is formed.
- the electrical insulating film 11 can be patterned by a photolithography method using a photocurable resin.
- silicon oxide (SiO 2 ), silicon nitride (SiN), titanium oxide (TiO 2 ), titanium nitride TiN can be formed by using a vacuum deposition method, a sputtering method, a plasma CVD method, an ion plating method, or the like. 11 can be patterned.
- the surface area of the first extraction electrode 7 is increased by expanding the first extraction electrode 7 to a region partially overlapping the first heat radiation part 10.
- part of the heat generated in the organic EL element 3 can be diffused to the second extraction electrode 7 having a wide surface extending in the second direction Y from the first electrode 4.
- the heat diffused in one and the other in the second direction Y of the second extraction electrode 7 diffuses from the surface of the first extraction electrode 7 to the outside.
- part of the heat diffused to the first extraction electrode 7 is diffused to the support substrate and diffuses to the outside.
- the temperature rise of the organic EL element 3 can be efficiently suppressed by extending the 1st extraction electrode 7 to the area
- FIG. 3A, FIG. 3B, and FIG. 3C are figures which show typically the light-emitting device 1 of 3rd Embodiment of this invention.
- 3A is a plan view of the light-emitting device 1
- FIG. 3B is a cross-sectional view of the light-emitting device 1 as viewed from the section line II-II in FIG. 3A
- FIG. 3C is a view from the section line III-III in FIG. 2 is a cross-sectional view of the light emitting device 1.
- FIG. The light emitting device 1 of the third embodiment further includes a second heat radiating unit 12 in addition to the light emitting devices of the first and second embodiments described above.
- FIGS. 3C show a case where the second heat radiating portion 12 is provided for the light emitting device 1 of the second embodiment shown in FIG. 2A, FIG. 2B, and FIG. 2C.
- the third embodiment includes a case where the second heat radiating unit 12 is provided to the light emitting device 1 of the first embodiment shown in FIGS. 1A, 1B, and 1C.
- the light emitting device 1 of the third embodiment shown in FIGS. 3A, 3B, and 3C portions corresponding to the light emitting device 1 of the second embodiment shown in FIGS. 2A, 2B, and 2C are shown.
- the light-emitting device 1 of 3rd Embodiment is further provided with the 2nd thermal radiation part 12 extended from the said connection electrode 9 on the 2nd extraction electrode 8, as shown to FIG. 3A and 3B.
- the second heat radiating portion 12 in the third embodiment extends from the periphery of the connection electrode 9 of the second embodiment shown in FIGS. 2A, 2B, and 2C, and is on the second extraction electrode 8. Is formed.
- the organic EL element 3 When the light emitting device 1 is used, the organic EL element 3 generates heat, but the heat generated in the element 3 is not only diffused from the second electrode 6 to the first heat radiating portion 10 but also to the second heat radiating portion 12. Spread. The heat diffused to the second heat radiating portion 12 is further diffused from the second heat radiating portion 12 to the outside. As described above, in the light emitting device 1 of the third embodiment, the temperature increase of the organic EL element 3 can be further suppressed by further providing the second heat radiating unit 12 that diffuses heat to the outside.
- connection electrode 9 and the second extraction electrode 8 are separate members.
- the connection electrode 9 extends from the second electrode 6 to the second extraction electrode 8 and is electrically connected to the second extraction electrode 8.
- the connection electrode 9 and the second extraction electrode 8 are integrally formed.
- FIG. 4A, FIG. 4B, and FIG. 4C are figures which show typically the light-emitting device 1 of 4th Embodiment. 4A is a plan view of the light-emitting device 1
- FIG. 4B is a cross-sectional view of the light-emitting device 1 as viewed from the section line II-II in FIG. 4A, and FIG.
- FIG. 4C is a view from the section line III-III in FIG. 2 is a cross-sectional view of the light emitting device 1.
- FIG. 1 of the fourth embodiment shown in FIGS. 4A, 4B, and 4C the connection electrode 9 extends from the end of the second electrode 6, and the second extraction is performed from the peripheral edge of the connection electrode 9.
- the electrode 8 extends. Therefore, the second electrode 6, the connection electrode 9, and the second extraction electrode 8 are integrally formed.
- the second extraction electrode 8 is formed before the organic EL layer 3 is formed.
- the second extraction electrode 8 is the second electrode 6.
- the connection electrode 9 is formed in the same step as the step of forming the connection electrode 9.
- the second extraction electrode 8 is formed by the same member as the second electrode 6. The heat dissipation characteristics of the light emitting device can be further enhanced.
- the light emitting device according to the fifth embodiment of the present invention further includes an auxiliary heat radiating portion provided in contact with the first extraction electrode.
- 5A, 5B, and 5C show a light emitting device 1 according to a fifth embodiment that is an example of a light emitting device including an auxiliary heat dissipation portion.
- 5A is a plan view of the light-emitting device 1
- FIG. 5B is a cross-sectional view of the light-emitting device 1 as viewed from the section line II-II in FIG. 5A
- FIG. 5C is a view from the section line III-III in FIG. 2 is a cross-sectional view of the light emitting device 1.
- This auxiliary heat radiating portion 21 is further provided in addition to the components of the light emitting devices of the first to fourth embodiments described above, for example.
- the auxiliary heat radiating portion 21 has a product of thermal conductivity and film thickness larger than that of the first extraction electrode 7.
- the auxiliary heat radiating portion 21 may be provided in contact with either one of the two main surfaces of the first extraction electrode 7 or may be provided in contact with both of the two main surfaces.
- 5A, FIG. 5B, and FIG. 5C show a case where the auxiliary heat radiating portion 21 is provided in contact with one of the two main surfaces of the first extraction electrode 7. That is, in FIGS. 5A, 5B, and 5C, the auxiliary heat radiating portion 21 is provided in contact with the surface of the first extraction electrode 7 opposite to the substrate 2 side.
- the first extraction electrode is constituted by an electrode exhibiting optical transparency, but the auxiliary heat dissipation portion provided in contact with the first extraction electrode 7 Since 21 is not located in the area
- the heat dissipation characteristics of the light emitting device can be further enhanced.
- the auxiliary heat radiating portion 21 having a product of thermal conductivity and film thickness larger than that of the first extraction electrode 7 also functions as an auxiliary electrode of the first extraction electrode 7. Therefore, by providing such an auxiliary heat radiating portion 21, the light emission efficiency of the light emitting device can be improved.
- the organic EL element includes a pair of electrodes (first and second electrodes) including an anode and a cathode, and one or a plurality of organic EL layers provided between the electrodes. At least one light emitting layer is provided as one or a plurality of organic EL layers.
- the organic EL element may include a layer containing an inorganic substance and an organic substance, an inorganic layer, and the like.
- the organic substance constituting the organic layer may be a low molecular compound or a high molecular compound, or a mixture of a low molecular compound and a high molecular compound.
- the organic layer preferably contains a polymer compound, and preferably contains a polymer compound having a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- Examples of the organic EL layer provided between the cathode and the light emitting layer include an electron injection layer, an electron transport layer, and a hole blocking layer.
- the layer close to the cathode is called an electron injection layer
- the layer close to the light emitting layer is called an electron transport layer.
- Examples of the organic EL layer provided between the anode and the light emitting layer include a hole injection layer, a hole transport layer, and an electron block layer.
- anode / light emitting layer / cathode b) anode / hole injection layer / light emitting layer / cathode c) anode / hole injection layer / light emitting layer / electron injection layer / cathode d) anode / hole injection layer / light emitting layer / Electron transport layer / cathode e) anode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode f) anode / hole transport layer / light emitting layer / cathode g) anode / hole transport layer / light emitting layer / Electron injection layer / cathode h) anode / hole transport layer / light emitting layer / electron transport layer / cathode i) anode / hole
- the organic EL element used as the light source of the light emitting device of the present invention may have two or more light emitting layers.
- the configuration of the organic EL device having two light emitting layers is as follows. And the layer structure shown in the following q). Note that the two (structural unit A) layer structures may be the same or different. q) Anode / (structural unit A) / charge generating layer / (structural unit A) / cathode If “(structural unit A) / charge generating layer” is “structural unit B”, it has three or more light emitting layers.
- Examples of the structure of the organic EL element include the layer structure shown in the following r). r) anode / (structural unit B) x / (structural unit A) / cathode
- x represents an integer of 2 or more
- (structural unit B) x is a stack in which the structural unit B is stacked in x stages. Represents the body.
- a plurality of (structural units B) may have the same or different layer structure.
- the charge generation layer is a layer that generates holes and electrons by applying an electric field.
- Examples of the charge generation layer include a thin film made of vanadium oxide, indium tin oxide (abbreviated as ITO), molybdenum oxide, or the like.
- the anode of the pair of electrodes composed of the anode and the cathode may be disposed closer to the support substrate than the cathode, and the cathode may be disposed closer to the support substrate than the anode.
- each layer may be laminated on the support substrate in order from the right side to constitute an organic EL element, or each layer may be laminated on the support substrate in order from the left side to constitute an organic EL element. May be.
- the order of the layers to be laminated, the number of layers, and the thickness of each layer can be appropriately set in consideration of the light emission efficiency and the element lifetime.
- an electrode exhibiting optical transparency is used for the anode.
- an electrode which shows light transmittance thin films, such as a metal oxide, a metal sulfide, and a metal, can be used, for example, and an electrode with high electrical conductivity and light transmittance is used suitably.
- a thin film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (abbreviated as IZO), gold, platinum, silver, copper, or the like is used.
- ITO, IZO Or a thin film made of tin oxide is preferably used.
- Examples of the method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method.
- an organic transparent conductive film such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used.
- the film thickness of the anode is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 10 nm to 10 ⁇ m.
- a material for the cathode is preferably a material having a low work function, easy electron injection into the light emitting layer, and high electrical conductivity. Further, in the organic EL element configured to extract light from the anode side, a material having a high reflectivity with respect to visible light is preferable as the cathode material in order to reflect light emitted from the light emitting layer to the anode side by the cathode.
- the cathode for example, an alkali metal, an alkaline earth metal, a transition metal, a group 13 metal of the periodic table, or the like can be used.
- cathode materials include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, and ytterbium.
- Two or more alloys of the metals; one or more of the metals and one or more of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin Or graphite or a graphite intercalation compound is used.
- the transparent conductive electrode which consists of a conductive metal oxide, a conductive organic substance, etc. can be used, for example.
- the conductive metal oxide include indium oxide, zinc oxide, tin oxide, ITO, and IZO.
- the conductive organic material include polyaniline or a derivative thereof, polythiophene or a derivative thereof.
- the cathode may be composed of a laminate in which two or more layers are laminated.
- the electron injection layer may be used as a cathode.
- the film thickness of the cathode is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 10 nm to 10 ⁇ m.
- Examples of the method for producing the cathode include a vacuum deposition method, a sputtering method, and a laminating method in which a metal thin film is thermocompression bonded.
- the hole injection material constituting the hole injection layer examples include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide; phenylamine compounds; starburst amine compounds; phthalocyanine compounds; amorphous And carbon; polyaniline; and polythiophene derivatives.
- the thickness of the hole injection layer is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. is there.
- Hole transport layer examples of the hole transport material constituting the hole transport layer include polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, pyrazoline derivatives, arylamine derivatives, stilbene. Derivative, triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) or derivative thereof, or poly (2,5-thienylene vinylene) ) Or a derivative thereof.
- the film thickness of the hole transport layer is set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. .
- the light emitting layer is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or an organic substance and a dopant that assists the organic substance.
- the dopant is added, for example, in order to improve the luminous efficiency and change the emission wavelength.
- the organic substance which comprises a light emitting layer may be a low molecular compound or a high molecular compound, and when forming a light emitting layer by the apply
- the number average molecular weight in terms of polystyrene of the polymer compound constituting the light emitting layer is, for example, about 10 3 to 10 8 .
- the light emitting material constituting the light emitting layer include the following dye materials, metal complex materials, polymer materials, and dopant materials.
- dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.
- Metal complex materials examples include rare earth metals such as Tb, Eu, and Dy, or Al, Zn, Be, Ir, Pt, etc. as a central metal, and oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline.
- the metal complex which has a structure etc. in a ligand can be mentioned.
- the metal complex examples include a metal complex having light emission from a triplet excited state such as an iridium complex and a platinum complex; an aluminum quinolinol complex; a benzoquinolinol beryllium complex; a benzoxazolyl zinc complex; a benzothiazole zinc complex; A porphyrin zinc complex; a phenanthroline europium complex;
- Polymer material examples include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and the above-described dye materials and metal complex light emitting materials. Can be mentioned.
- the thickness of the light emitting layer is usually about 2 nm to 200 nm.
- Electrode transport layer As the electron transport material constituting the electron transport layer, known materials can be used. For example, oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetra Cyanoanthraquinodimethane or derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof And so on.
- oxadiazole derivatives anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetra Cyanoanthraquinodimethane or derivative
- the film thickness of the electron transport layer is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. .
- ⁇ Electron injection layer> As a material constituting the electron injection layer, an optimum material is appropriately selected according to the type of the light emitting layer.
- the material constituting the electron injection layer include alkali metals, alkaline earth metals, alloys containing one or more of alkali metals and alkaline earth metals, oxides of alkali metals or alkaline earth metals, and halides. , Carbonates, or mixtures of these substances.
- alkali metals, alkali metal oxides, halides, and carbonates include, for example, lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, fluorine.
- Examples thereof include potassium iodide, rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, and lithium carbonate.
- alkaline earth metal, alkaline earth metal oxides, halides, and carbonates include, for example, magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, and oxidation. Examples thereof include barium, barium fluoride, strontium oxide, strontium fluoride, and magnesium carbonate.
- An electron injection layer may be comprised by the laminated body which laminated
- the thickness of the electron injection layer is preferably about 1 nm to 1 ⁇ m.
- Each organic EL layer described above is applied, for example, by spin coating, ink jet printing, cap coating, nozzle printing, letterpress printing, intaglio printing, etc., vacuum deposition, lamination, spray coating, etc. It can be formed by a slit die coating method or the like.
- an organic EL layer is formed by coating and forming an ink containing an organic EL material to be each organic EL layer.
- the solvent of the ink used for forming the organic EL layer include chlorine-based solvents such as chloroform, methylene chloride, and dichloroethane; ether-based solvents such as tetrahydrofuran; aromatic hydrocarbon-based solvents such as toluene and xylene; acetone And ketone solvents such as methyl ethyl ketone; ester solvents such as ethyl acetate, butyl acetate, and ethyl cellosolve acetate; and water.
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Abstract
Description
[1]支持基板と、
第1電極、一層以上の有機エレクトロルミネッセンス層、および第2電極がこの順で前記支持基板上に積層されて構成される有機エレクトロルミネッセンス素子と、
前記支持基板上において前記第1の電極から延在し、外部の電力供給源と電気的に接続されるための第1取出電極と、
前記支持基板上において前記第1電極および前記第1取出電極とから離間して配置され、外部の電力供給源と電気的に接続されるための第2取出電極と、
前記支持基板上において前記第2電極から延在し、前記第2取出電極に接続される接続電極と、そして
支持基板上において、前記第2電極から延在し、前記第1電極および前記第1取出電極と電気的に絶縁されている第1放熱部と、
を有する発光装置。
[2]第2取出電極上において前記接続電極から延在する第2放熱部をさらに備える、上記[1]記載の発光装置。
[3]前記支持基板の厚み方向の一方から見て、前記第1放熱部の一部又は全部が前記第1取出電極と重なるように配置され、
前記支持基板の厚み方向の一方から見て、前記第1放熱部と前記第1取出電極とが重なる部位において、前記第1放熱部と前記第1取出電極との間に電気絶縁膜が設けられている、上記[1]または[2]に記載の発光装置。
[4]熱伝導率と膜厚との積が、第1電極よりも第2電極の方が大きい、上記[1]~[3]のいずれか1つに記載の発光装置。
[5]前記第1取出電極に接して設けられている補助放熱部をさらに備え、該補助放熱部の熱伝導率と膜厚との積が前記第1取出電極よりも大きい、上記[1]~[4]のいずれか1つに記載の発光装置。
[6]第2電極の熱伝導率が、30W/(m・K)以上である、上記[1]~[5]のいずれか1つに記載の発光装置。
[7]前記第2電極の膜厚が100nm以上である、上記[1]~[6]のいずれか1つに記載の発光装置。
本発明の発光装置は、支持基板と、第1電極、一層以上の有機EL層および第2電極がこの順で前記支持基板上に積層されて構成される有機EL素子と、前記支持基板上において前記第1の電極から延在し、外部の電力供給源と電気的に接続されるための第1取出電極と、前記支持基板上において前記第1電極および前記第1取出電極とは離間して配置され、外部の電力供給源と電気的に接続されるための第2取出電極と、前記支持基板上において前記第2電極から延在し、前記第2取出電極に接続される接続電極と、そして支持基板上において前記第2電極から延在し、前記第1電極および前記第1取出電極とは電気的に絶縁されている第1放熱部と、を有する。
<発光装置の構成>
まず発光装置の構成について説明する。図1A、図1B、及び図1Cは本発明の第1の実施形態の発光装置1を模式的に示す図である。図1Aは発光装置1の平面図であり、図1Bは図1Aの切断面線II-IIから見た発光装置1の断面図であり、図1Cは図1Aの切断面線III-IIIから見た発光装置1の断面図である。発光装置は1つの有機EL素子のみを備えていてもよく、また複数の有機EL素子を備えていてもよい。本実施形態では一例として1つの有機EL素子を備える発光装置の構成について説明する。
次に発光装置1の製造方法について説明する。まず支持基板2を用意する。有機EL素子3としてボトムエミッション型の有機EL素子を支持基板2上に搭載する場合、この支持基板2には光透過性を示す基板が用いられる。支持基板2には、たとえばガラス板、プラスチック板、高分子フィルム、およびシリコン板、並びにこれらを積層したものなどが用いられる。
これらは、たとえば導電性薄膜を支持基板2上に形成し、さらにフォトリソグラフィ法によって導電性薄膜を所定の形状にパターニングすることによって形成することができる。
上述の実施形態1では、図1Aに示すように平面視で第1放熱部10と第1取出電極7とを重ならないように配置している。そのため第1の実施形態では、特別に絶縁部材を配置することなく第1放熱部10と第1取出電極7との電気的な絶縁を確保することができている。しかし、放熱特性の観点からは、平面視で、第1取出電極7を第1放熱部10に重なる位置にまで広げることが好ましい。図2A、図2B、及び図2Cは、第1放熱部10、すなわち部材10a及び10bに重なる位置にまで第1取出電極7を広げた形態の発光装置1を模式的に示す図である。
なお、図2A、図2B、及び図2Cに示す第2の実施形態では、図1A、図1B、及び図1Cに示す第1の実施形態の発光装置の構成要素に対して、一部の構成要素(例えば、第1取出電極7)の形状が異なる。しかし、その構成要素は形状が異なるだけで、本発明の発光装置における役割は同一であるので、図2A、図2B、及び図2Cにおいても、図1A、図1B、及び図1Cに示した符号と同一符号を付している。さらに、図2A、図2B、及び図2Cに示す第2の実施形態の発光装置1において、図1A、図1B、及び図1Cに示す前述の第1の実施形態の発光装置1と対応する部分については、第1の実施形態の発光装置と同一の符号を付すとともに、重複する説明を省略することがある。これらの点に関しては、後述の第3の実施形態においても、第4の実施形態においても、第5の実施形態においても、同様である。
図2A、図2B、及び図2Cに示す第2の実施形態の発光装置1は、図1A、図1B、及び図1Cに示す第1の実施形態の発光装置1に対して第1取出電極7の構造が異なる。そして、第2の実施形態の発光装置は、第1取出電極7の形状の違いに起因して必要となる電気絶縁膜11をさらに有する。
図3A、図3B、及び図3Cは本発明の第3実施形態の発光装置1を模式的に示す図である。図3Aは発光装置1の平面図であり、図3Bは図3Aの切断面線II-IIから見た発光装置1の断面図であり、図3Cは図3Aの切断面線III-IIIから見た発光装置1の断面図である。第3の実施形態の発光装置1は、前述の第1及び第2の各実施形態の発光装置に加えて、第2放熱部12をさらに備える。図3A、図3B、及び図3Cでは、図2A、図2B、及び図2Cに示した第2の実施形態の発光装置1に対して第2放熱部12を設けた場合を示している。しかし、第3の実施形態には、図1A、図1B、及び図1Cに示した前述の第1の実施形態の発光装置1に対して第2放熱部12を設ける場合も含まれる。
なお、図3A、図3B、及び図3Cに示す第3の実施形態の発光装置1において図2A、図2B、及び図2Cに示す前述の第2の実施形態の発光装置1と対応する部分については、前述の第2の実施形態の発光装置と同一の符号を付すとともに、重複する説明を省略することがある。
上述の第1、第2、及び第3の各実施形態の発光装置では、接続電極9と第2取出電極8とは別体の部材である。そして、接続電極9は第2電極6から第2取出電極8にまで延在し、第2取出電極8と電気的に接続している。これに対して、第4の実施形態の発光装置では、接続電極9と第2の取出電極8とは一体的に形成されている。図4A、図4B、及び図4Cは、第4の実施形態の発光装置1を模式的に示す図である。図4Aは発光装置1の平面図であり、図4Bは図4Aの切断面線II-IIから見た発光装置1の断面図であり、図4Cは図4Aの切断面線III-IIIから見た発光装置1の断面図である。図4A、図4B、及び図4Cに示す第4の実施形態の発光装置1では、第2電極6の端部から接続電極9が延在するとともに、この接続電極9の周縁部から第2取出電極8が延在している。したがって、第2電極6、接続電極9および第2取出電極8が一体的に形成されている。
本発明の第5の実施形態の発光装置は前記第1取出電極に接して設けられている補助放熱部をさらに備える。図5A、図5B、及び図5Cに補助放熱部を備える発光装置の一例である第5の実施形態の発光装置1を示す。図5Aは発光装置1の平面図であり、図5Bは図5Aの切断面線II-IIから見た発光装置1の断面図であり、図5Cは図5Aの切断面線III-IIIから見た発光装置1の断面図である。この補助放熱部21は、たとえば前述の第1~第4の各実施形態の発光装置の構成要素に加えてさらに設けられる。補助放熱部21は熱伝導率と膜厚との積が前記第1取出電極7よりも大きい。補助放熱部21は、第1取出電極7の2つの主面のいずれか一方に接して設けられていればよく、また2つの主面の両方に接して設けられていてもよい。図5A、図5B、及び図5Cでは、補助放熱部21が第1取出電極7の2つの主面のいずれか一方に接して設けられている場合を示している。すなわち、図5A、図5B、及び図5Cでは、補助放熱部21は第1取出電極7の基板2側と反対側の表面に接して設けられている。前述したように、ボトムエミッション型の有機EL素子では、第1電極と同様、第1取出電極も光透過性を示す電極によって構成されるが、第1取出電極7に接して設けられる補助放熱部21は光の出射面となる領域に位置していないので、光透過性を示す材料によって構成する必要はない。光透過性を示す電極は通常、放熱特性が必ずしも良好ではないので、光透過性の電極からの放熱は大きくない。しかし、第5の実施形態のように、光透過性の電極である第1電極4に熱的に接続する補助放熱部21を光透過性が不要な領域に放熱特性に優れる材料により設けることによって、発光装置の放熱特性をさらに高めることができる。また熱伝導率と膜厚との積が前記第1取出電極7よりも大きい補助放熱部21は、第1取出電極7の補助電極としても機能する。したがって、このような補助放熱部21を設けることによって、発光装置の発光効率を向上させることができる。
上記第1~第5の実施形態の発光装置の光源として用いられる有機EL素子の層構造、各層の構成、および各層の形成方法について、以下にさらに詳しく説明する。
a)陽極/発光層/陰極
b)陽極/正孔注入層/発光層/陰極
c)陽極/正孔注入層/発光層/電子注入層/陰極
d)陽極/正孔注入層/発光層/電子輸送層/陰極
e)陽極/正孔注入層/発光層/電子輸送層/電子注入層/陰極
f)陽極/正孔輸送層/発光層/陰極
g)陽極/正孔輸送層/発光層/電子注入層/陰極
h)陽極/正孔輸送層/発光層/電子輸送層/陰極
i)陽極/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
j)陽極/正孔注入層/正孔輸送層/発光層/陰極
k)陽極/正孔注入層/正孔輸送層/発光層/電子注入層/陰極
l)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/陰極
m)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
n)陽極/発光層/電子注入層/陰極
o)陽極/発光層/電子輸送層/陰極
p)陽極/発光層/電子輸送層/電子注入層/陰極
(ここで、記号「/」は、記号「/」を挟む各層が隣接して積層されていることを示す。
以下同じ。)
q)陽極/(構造単位A)/電荷発生層/(構造単位A)/陰極
また「(構造単位A)/電荷発生層」を「構造単位B」とすると、3層以上の発光層を有する有機EL素子の構成として、下記r)に示す層構成を挙げることができる。
r)陽極/(構造単位B)x/(構造単位A)/陰極
なお記号「x」は、2以上の整数を表し、(構造単位B)xは、構造単位Bがx段積層された積層体を表す。また複数ある(構造単位B)の層構成は同じでも、異なっていてもよい。
発光層から放たれる光が陽極を通って素子外に出射する構成の有機EL素子の場合、陽極には光透過性を示す電極が用いられる。光透過性を示す電極としては、例えば、金属酸化物、金属硫化物および金属などの薄膜を用いることができ、電気伝導度および光透過率の高いものが好適に用いられる。具体的には酸化インジウム、酸化亜鉛、酸化スズ、ITO、インジウム亜鉛酸化物(Indium Zinc Oxide:略称IZO)、金、白金、銀、および銅などから成る薄膜が用いられ、これらの中でもITO、IZO、または酸化スズから成る薄膜が好適に用いられる。
陰極の材料としては、仕事関数が小さく、発光層への電子注入が容易で、電気伝導度の高い材料が好ましい。また陽極側から光を取出す構成の有機EL素子では、発光層から放たれる光を陰極で陽極側に反射するために、陰極の材料としては可視光に対する反射率の高い材料が好ましい。陰極には、たとえばアルカリ金属、アルカリ土類金属、遷移金属および周期表の13族金属などを用いることができる。陰極の材料としては、たとえばリチウム、ナトリウム、カリウム、ルビジウム、セシウム、ベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、アルミニウム、スカンジウム、バナジウム、亜鉛、イットリウム、インジウム、セリウム、サマリウム、ユーロピウム、テルビウム、イッテルビウムなどの金属;、前記金属のうちの2種以上の合金;、前記金属のうちの1種以上と、金、銀、白金、銅、マンガン、チタン、コバルト、ニッケル、タングステン、錫のうちの1種以上との合金;またはグラファイト若しくはグラファイト層間化合物などが用いられる。合金の例としては、例えば、マグネシウム-銀合金、マグネシウム-インジウム合金、マグネシウム-アルミニウム合金、インジウム-銀合金、リチウム-アルミニウム合金、リチウム-マグネシウム合金、リチウム-インジウム合金、カルシウム-アルミニウム合金などを挙げることができる。また陰極としては、例えば、導電性金属酸化物および導電性有機物などから成る透明導電性電極を用いることができる。具体的には、導電性金属酸化物として、例えば、酸化インジウム、酸化亜鉛、酸化スズ、ITO、およびIZOを挙げることができる。また、導電性有機物として、例えば、ポリアニリンもしくはその誘導体、ポリチオフェンもしくはその誘導体などを挙げることができる。なお陰極は、2層以上を積層した積層体で構成されていてもよい。なお電子注入層が陰極として用いられることもある。
正孔注入層を構成する正孔注入材料としては、例えば、酸化バナジウム、酸化モリブデン、酸化ルテニウム、および酸化アルミニウムなどの酸化物;フェニルアミン系化合物;スターバースト型アミン系化合物;フタロシアニン系化合物;アモルファスカーボン;ポリアニリン;およびポリチオフェン誘導体などを挙げることができる。
正孔輸送層を構成する正孔輸送材料としては、例えば、ポリビニルカルバゾール若しくはその誘導体、ポリシラン若しくはその誘導体、側鎖若しくは主鎖に芳香族アミンを有するポリシロキサン誘導体、ピラゾリン誘導体、アリールアミン誘導体、スチルベン誘導体、トリフェニルジアミン誘導体、ポリアニリン若しくはその誘導体、ポリチオフェン若しくはその誘導体、ポリアリールアミン若しくはその誘導体、ポリピロール若しくはその誘導体、ポリ(p-フェニレンビニレン)若しくはその誘導体、又はポリ(2,5-チエニレンビニレン)若しくはその誘導体などを挙げることができる。
発光層は、通常、主として蛍光及び/又はりん光を発光する有機物、または該有機物とこれを補助するドーパントとから形成される。ドーパントは、たとえば発光効率の向上や、発光波長を変化させるために加えられる。なお発光層を構成する有機物は、低分子化合物でも高分子化合物でもよく、塗布法によって発光層を形成する場合には、発光層は高分子化合物を含むことが好ましい。発光層を構成する高分子化合物のポリスチレン換算の数平均分子量はたとえば103~108程度である。発光層を構成する発光材料としては、たとえば以下の色素系材料、金属錯体系材料、高分子系材料、ドーパント材料を挙げることができる。
色素系材料としては、たとえば、シクロペンダミン誘導体、テトラフェニルブタジエン誘導体化合物、トリフェニルアミン誘導体、オキサジアゾール誘導体、ピラゾロキノリン誘導体、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ピロール誘導体、チオフェン環化合物、ピリジン環化合物、ペリノン誘導体、ペリレン誘導体、オリゴチオフェン誘導体、オキサジアゾールダイマー、ピラゾリンダイマー、キナクリドン誘導体、クマリン誘導体などを挙げることができる。
金属錯体系材料としては、たとえばTb、Eu、Dyなどの希土類金属、またはAl、Zn、Be、Ir、Ptなどを中心金属に有し、オキサジアゾール、チアジアゾール、フェニルピリジン、フェニルベンゾイミダゾール、キノリン構造などを配位子に有する金属錯体を挙げることができる。該金属錯体としては、たとえばイリジウム錯体、白金錯体などの三重項励起状態からの発光を有する金属錯体;アルミニウムキノリノール錯体;ベンゾキノリノールベリリウム錯体;ベンゾオキサゾリル亜鉛錯体;ベンゾチアゾール亜鉛錯体;アゾメチル亜鉛錯体;ポルフィリン亜鉛錯体;フェナントロリンユーロピウム錯体などを挙げることができる。
高分子系材料としては、例えば、ポリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリシラン誘導体、ポリアセチレン誘導体、ポリフルオレン誘導体、ポリビニルカルバゾール誘導体、上記色素系材料や金属錯体系発光材料を高分子化したものなどを挙げることができる。
電子輸送層を構成する電子輸送材料としては、公知のものを使用でき、例えば、オキサジアゾール誘導体、アントラキノジメタン若しくはその誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアンスラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、又は8-ヒドロキシキノリン若しくはその誘導体の金属錯体、ポリキノリン若しくはその誘導体、ポリキノキサリン若しくはその誘導体、ポリフルオレン若しくはその誘導体などを挙げることができる。
電子注入層を構成する材料としては、発光層の種類に応じて最適な材料が適宜選択される。電子注入層を構成する材料としては、例えば、アルカリ金属、アルカリ土類金属、アルカリ金属およびアルカリ土類金属のうちの1種類以上を含む合金、アルカリ金属若しくはアルカリ土類金属の酸化物、ハロゲン化物、炭酸塩、またはこれらの物質の混合物などを挙げることができる。アルカリ金属、アルカリ金属の酸化物、ハロゲン化物、および炭酸塩の例としては、例えば、リチウム、ナトリウム、カリウム、ルビジウム、セシウム、酸化リチウム、フッ化リチウム、酸化ナトリウム、フッ化ナトリウム、酸化カリウム、フッ化カリウム、酸化ルビジウム、フッ化ルビジウム、酸化セシウム、フッ化セシウム、炭酸リチウムなどを挙げることができる。また、アルカリ土類金属、アルカリ土類金属の酸化物、ハロゲン化物、炭酸塩の例としては、例えば、マグネシウム、カルシウム、バリウム、ストロンチウム、酸化マグネシウム、フッ化マグネシウム、酸化カルシウム、フッ化カルシウム、酸化バリウム、フッ化バリウム、酸化ストロンチウム、フッ化ストロンチウム、炭酸マグネシウムなどを挙げることができる。電子注入層は、2層以上を積層した積層体で構成されてもよく、たとえばLiF/Caなどを挙げることができる。
2 支持基板
3 有機EL素子
4 第1電極
5 有機EL層
6 第2電極
7 第1取出電極
8 第2取出電極
9 接続電極
10 第1放熱部
11 電気絶縁膜
12 第2放熱部
21 補助放熱部
Claims (7)
- 支持基板と、
第1電極、一層以上の有機エレクトロルミネッセンス層、および第2電極がこの順で前記支持基板上に積層されて構成される有機エレクトロルミネッセンス素子と、
前記支持基板上において前記第1の電極から延在し、外部の電力供給源と電気的に接続されるための第1取出電極と、
前記支持基板上において前記第1電極および前記第1取出電極とから離間して配置され、外部の電力供給源と電気的に接続されるための第2取出電極と、
前記支持基板上において前記第2電極から延在し、前記第2取出電極に接続される接続電極と、
支持基板上において、前記第2電極から延在し、前記第1電極および前記第1取出電極と電気的に絶縁されている第1放熱部と、
を有する発光装置。 - 第2取出電極上において前記接続電極から延在する第2放熱部をさらに備える請求項1記載の発光装置。
- 前記支持基板の厚み方向の一方から見て、前記第1放熱部の一部又は全部が前記第1取出電極と重なるように配置され、
前記支持基板の厚み方向の一方から見て、前記第1放熱部と前記第1取出電極とが重なる部位において、前記第1放熱部と前記第1取出電極との間に電気絶縁膜が設けられている、請求項1に記載の発光装置。 - 熱伝導率と膜厚との積が、第1電極よりも第2電極の方が大きい、請求項1に記載の発光装置。
- 前記第1取出電極に接して設けられている補助放熱部をさらに備え、該補助放熱部の熱伝導率と膜厚との積が前記第1取出電極よりも大きい請求項1に記載の発光装置。
- 第2電極の熱伝導率が、30W/(m・K)以上である、請求項1に記載の発光装置。
- 前記第2電極の膜厚が100nm以上である、請求項1に記載の発光装置。
Priority Applications (4)
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EP11762711.7A EP2555588B1 (en) | 2010-03-29 | 2011-03-25 | Light-emitting device |
CN201180016230.1A CN102845131B (zh) | 2010-03-29 | 2011-03-25 | 发光装置 |
US13/637,583 US8866382B2 (en) | 2010-03-29 | 2011-03-25 | Light-emitting device |
KR1020127025191A KR20130018252A (ko) | 2010-03-29 | 2011-03-25 | 발광 장치 |
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JP2010074568A JP5732735B2 (ja) | 2010-03-29 | 2010-03-29 | 発光装置 |
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EP (1) | EP2555588B1 (ja) |
JP (1) | JP5732735B2 (ja) |
KR (1) | KR20130018252A (ja) |
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CN110212002B (zh) * | 2019-06-13 | 2022-05-13 | 京东方科技集团股份有限公司 | 显示背板、显示面板和显示装置 |
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- 2011-03-25 CN CN201180016230.1A patent/CN102845131B/zh not_active Expired - Fee Related
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CN102845131A (zh) | 2012-12-26 |
EP2555588A1 (en) | 2013-02-06 |
EP2555588A4 (en) | 2016-08-31 |
US20130020924A1 (en) | 2013-01-24 |
US8866382B2 (en) | 2014-10-21 |
TW201203647A (en) | 2012-01-16 |
CN102845131B (zh) | 2016-03-23 |
KR20130018252A (ko) | 2013-02-20 |
EP2555588B1 (en) | 2018-07-11 |
JP2011210409A (ja) | 2011-10-20 |
JP5732735B2 (ja) | 2015-06-10 |
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