WO2011114781A1 - Dispositif de conversion photoélectrique et procédé de production de celui-ci - Google Patents

Dispositif de conversion photoélectrique et procédé de production de celui-ci Download PDF

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Publication number
WO2011114781A1
WO2011114781A1 PCT/JP2011/051731 JP2011051731W WO2011114781A1 WO 2011114781 A1 WO2011114781 A1 WO 2011114781A1 JP 2011051731 W JP2011051731 W JP 2011051731W WO 2011114781 A1 WO2011114781 A1 WO 2011114781A1
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Prior art keywords
photoelectric conversion
filler
bypass diode
conversion device
electrode layer
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PCT/JP2011/051731
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English (en)
Japanese (ja)
Inventor
竜也 桐山
翔 高橋
聡生 柳浦
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三洋電機株式会社
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Priority claimed from JP2010058706A external-priority patent/JP2011192864A/ja
Priority claimed from JP2010059172A external-priority patent/JP2011192890A/ja
Priority claimed from JP2010127097A external-priority patent/JP2011253954A/ja
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2011114781A1 publication Critical patent/WO2011114781A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photoelectric conversion device and a manufacturing method thereof.
  • a photoelectric conversion device in which semiconductor thin films such as amorphous and microcrystals are stacked is used.
  • a photoelectric conversion module is formed by connecting a plurality of photoelectric conversion cells and enclosing with a light-transmitting substrate and a filler mainly composed of ethylene vinyl acetate copolymer (EVA).
  • EVA ethylene vinyl acetate copolymer
  • a reverse bias voltage is applied to the photoelectric conversion cell, and the cell generates heat.
  • Such a situation is called a hot spot. If the phenomenon of this hot spot occurs and the temperature of the photoelectric conversion cell continues to rise, in the worst case, the photoelectric conversion cell is destroyed, and a predetermined electric output cannot be taken out from the photoelectric conversion module.
  • a method of connecting a bypass diode to the photoelectric conversion cell so as to be reverse-biased with respect to the normal output is adopted.
  • One aspect of the present invention includes a photoelectric conversion module in which photoelectric conversion cells divided by slits are connected in series, a bypass diode film having a diode on which at least a p layer and an n layer are stacked, and a bypass diode film And a back sheet for sealing the back surface of the photoelectric conversion module, and a filler filled between the photoelectric conversion module and the back sheet, and the diodes are arranged in series so as to straddle the adjacent photoelectric conversion cells.
  • This is a photoelectric conversion device in which a bypass diode film is extended along the direction of connection.
  • a photoelectric conversion device in which a bypass diode is easily installed can be obtained.
  • the photoelectric conversion device 200 includes a photoelectric conversion module 202, a bypass diode film 204, a back sheet 208, and a filler 210.
  • FIG. 1 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 200 along the direction in which the bypass diode film 204 is extended.
  • FIG. 2 shows a perspective view of the photoelectric conversion device 200 with the back sheet 208 and the filler 210 removed.
  • the photoelectric conversion module 202 has an amorphous silicon photoelectric conversion unit (a) having a substrate 20 as a light incident side and a wide band gap as a transparent electrode layer 22 and a top cell from the light incident side. -Si unit) 24, an intermediate layer 26, and a microcrystalline silicon photoelectric conversion unit ( ⁇ c-Si unit) 28 having a narrower band gap than the a-Si unit 24 and a back electrode layer 30 as a bottom cell are stacked.
  • a tandem photoelectric conversion device in which the a-Si unit 24 and the ⁇ c-Si unit 28 are stacked will be described as an example.
  • a single-type photoelectric conversion device using only one of the a-Si unit 24 and the ⁇ c-Si unit 28 or a photoelectric conversion device to which another type of photoelectric conversion unit is applied may be used.
  • a material having transparency in at least the visible light wavelength region such as a glass substrate or a plastic substrate, can be applied.
  • a transparent electrode layer 22 is formed on the substrate 20.
  • the transparent electrode layer 22 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO).
  • TCO transparent conductive oxide
  • zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 22 can be formed by, for example, a sputtering method or a CVD method.
  • a slit S1 is formed in the transparent electrode layer 22 and patterned into a strip shape.
  • the transparent electrode layer 22 can be patterned into a strip shape using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • the a-Si unit 24 includes a silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), a carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • a silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), a carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • Plasma chemical vapor deposition in which a mixed gas obtained by mixing a p-type dopant-containing gas such as phosphine (PH 3 ) and a diluent gas such as phosphine (PH 3 ) and a diluent gas such as hydrogen (H 2 ) is formed into a plasma. It can be formed by the method (CVD method).
  • the intermediate layer 26 is formed on the a-Si unit 24.
  • the intermediate layer 26 is preferably made of a transparent conductive oxide (TCO) such as zinc oxide (ZnO) or silicon oxide (SiOx). In particular, it is preferable to use zinc oxide (ZnO) or silicon oxide (SiOx) doped with magnesium Mg.
  • TCO transparent conductive oxide
  • ZnO zinc oxide
  • SiOx silicon oxide
  • the intermediate layer 26 can be formed by, for example, a sputtering method or a CVD method.
  • the thickness of the intermediate layer 26 is preferably in the range of 10 nm to 200 nm. The intermediate layer 26 may not be provided.
  • a ⁇ c-Si unit 28 in which a p-type layer, an i-type layer, and an n-type layer are sequentially laminated is formed.
  • the ⁇ c-Si unit 28 includes silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 ) formed by a plasma CVD method in which a mixed gas obtained by mixing a p-type dopant-containing gas such as phosphine (PH 3 ) and a diluted gas such as phosphine (PH 3 ) and hydrogen (H 2 ) is formed into a plasma. can do.
  • the plasma CVD method it is preferable to apply, for example, a 13.56 MHz RF plasma CVD method as in the case of the a-Si unit 24.
  • a slit S2 is formed in the a-Si unit 24 and the ⁇ c-Si unit 28 and patterned into a strip shape.
  • a slit S2 is formed by irradiating a position 50 ⁇ m laterally from the position of the slit S1 formed in the transparent electrode layer 22 to form the slit S2, and the a-Si unit 24 and the ⁇ c-Si unit 28 are patterned into strips.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a back electrode layer 30 is formed on the ⁇ c-Si unit 28.
  • the back electrode layer 30 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are sequentially laminated.
  • a transparent conductive oxide (TCO) such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • TCO transparent conductive oxide
  • TCO such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • a material (TCO) doped with impurities is used.
  • zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used.
  • metals such as silver (Ag) and aluminum (Al), can be used.
  • the transparent conductive oxide (TCO) can be formed by, for example, a sputtering method or a CVD method.
  • the back electrode layer 30 is preferably about 1 ⁇ m in total. It is preferable that at least one of the back electrode layers 30 is provided with unevenness for enhancing the light confinement effect.
  • a slit S3 is formed in the back electrode layer 30 and patterned into a strip shape.
  • a slit S3 is formed by irradiating YAG laser to a position 50 ⁇ m lateral from the position of the slit S2 formed in the a-Si unit 24 and the ⁇ c-Si unit 28, and the back electrode layer 30 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the back electrode layer 30 of one photoelectric conversion cell is electrically connected to the transparent electrode layer 22 of the adjacent photoelectric conversion cell via the back electrode layer 30 embedded in the slit S2, and the adjacent photoelectric conversion cells are connected to each other. Are connected in series.
  • the bypass diode film 204 is configured by laminating the substrate 40, the first electrode layer 42, the bypass diode 44, and the second electrode layer 46.
  • the bypass diode film 204 is formed by arranging a plurality of bypass diodes 44 on a tape-like, film-like or sheet-like substrate 40 made of an insulating material.
  • the substrate 40 is made of a flexible insulating material.
  • a film of a plastic material such as polyethylene or polyimide is used.
  • a first electrode layer 42 is formed on the substrate 40.
  • the first electrode layer 42 may be a layer made of a conductive material.
  • the first electrode layer 42 is made of, for example, tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc., tin (Sn), antimony (Sb), fluorine (F), aluminum (Al). It is preferable to use at least one kind or a combination of plural kinds of transparent conductive oxides (TCO) doped with, etc., or a metal such as silver (Ag) or aluminum (Al). In particular, zinc oxide (ZnO) and metal are preferable because they have low resistivity and excellent plasma resistance.
  • the first electrode layer 42 can be formed by, for example, a sputtering method or a CVD method.
  • the first electrode layer 42 is patterned into a strip shape by the slit S4.
  • the bypass diode 44 formed on the bypass diode film 204 needs to be formed at the same pitch as the photoelectric conversion cell formed on the photoelectric conversion module 202.
  • the slits S4 are formed at a pitch P2 that matches the pitch P1 of the photoelectric conversion cell arrangement.
  • the first electrode layer 42 can be patterned into a strip shape using, for example, a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • the first electrode layer 42 may be formed by a sputtering method using a mask or a screen printing method.
  • the semiconductor layer 42 On the first electrode layer 42, at least a p-type layer and an n-type silicon thin film are sequentially stacked to form a semiconductor layer to be the bypass diode 44.
  • the semiconductor layer only needs to have a pn junction characteristic as a whole, and can adopt aspects such as a p / n two-layer stack or a p / i / n three-layer stack.
  • the semiconductor layer can be formed by laminating an amorphous silicon thin film or a microcrystalline silicon thin film.
  • An amorphous silicon thin film or a microcrystalline silicon thin film is formed using a silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), a carbon-containing gas such as methane (CH 4 ), diborane ( Plasma chemistry for forming a film by converting a mixed gas obtained by mixing a p-type dopant-containing gas such as B 2 H 6 ), an n-type dopant-containing gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) into plasma. It can be formed by a vapor deposition method (CVD method). As the plasma CVD method, for example, an RF plasma CVD method of 13.56 MHz is preferably applied.
  • a vapor deposition method As the plasma CVD method, for example, an RF plasma CVD method of 13.56 MHz is preferably applied.
  • the semiconductor layer is divided into strips by the slit S5 to form the bypass diode 44.
  • the slit S5 is formed by irradiating YAG laser at a position 50 ⁇ m lateral from the position of the slit S4 formed in the first electrode layer 42, and the semiconductor layer is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a second electrode layer 46 is formed on the bypass diode 44.
  • the second electrode layer 46 may be a layer made of a conductive material.
  • the second electrode layer 46 is made of, for example, tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc., tin (Sn), antimony (Sb), fluorine (F), aluminum (Al). It is preferable to use at least one kind or a combination of plural kinds of transparent conductive oxides (TCO) doped with, etc., or a metal such as silver (Ag) or aluminum (Al).
  • the second electrode layer 46 can be formed by, for example, a sputtering method or a CVD method.
  • a slit S6 is formed in the second electrode layer 46 and patterned into a strip shape.
  • a slit S6 is formed by irradiating YAG laser at a position 50 ⁇ m lateral from the position of the slit S5 formed in the semiconductor layer, and the second electrode layer 46 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the second electrode layer 46 may be formed by a sputtering method using a mask or a screen printing method.
  • the second electrode layer 46 of one bypass diode 44 is electrically connected to the first electrode layer 42 of the adjacent bypass diode 44 via the second electrode layer 46 embedded in the slit S5, and the adjacent bypass A bypass diode film 204 in which the diodes 44 are connected in series is formed.
  • the bypass diode film 204 formed in this way is arranged on the photoelectric conversion module 202 so that the voltage is applied in a reverse bias state in a state where the photoelectric conversion cell of the photoelectric conversion module 202 is normally generating power.
  • the bypass diode 44 of the bypass diode film 204 is connected to the photoelectric conversion cell. That is, the direction in which the bypass diode 44 of the bypass diode film 204 is connected in series is aligned with the direction in which the photoelectric conversion cells of the photoelectric conversion module 202 are connected in series, and the second electrode layer 46 of one bypass diode 44 of the bypass diode film 204 is aligned.
  • the pitch P2 of the arrangement of the bypass diodes 44 of the bypass diode film 204 and the pitch P1 of the arrangement of the photoelectric conversion cells of the photoelectric conversion module 202 are matched, so one of the photoelectric conversion cells connected in series
  • the bypass diodes 44 can be connected in association with each other. Note that by making the slits S1 to S3 and the slits S4 to S5 overlap, the alignment of the bypass diode film 204 and the photoelectric conversion module 202 can be easily performed.
  • bypass diode 44 may be provided across a plurality of photoelectric conversion cells without providing the bypass diode 44 for each of the photoelectric conversion cells connected in series.
  • the bypass diodes 44 are formed on the bypass diode film 204 at a pitch P2 that extends over a plurality of photoelectric conversion cells.
  • the pitch P2 of the arrangement of the bypass diodes 44 is n times the pitch P1 of the arrangement of the photoelectric conversion cells.
  • the surface of the back electrode layer 30 is covered with the back sheet 208 and sealed using the filler 210.
  • the filler 210 and the back sheet 208 can be resin materials such as EVA and polyimide.
  • the filler 210 is disposed on the back electrode layer 30 on which the bypass diode film 204 is disposed.
  • the filler 210 is covered with the back sheet 208 and heated to a temperature of about 150 ° C. toward the back electrode layer 30. Sealing can be performed by applying pressure to the. This can prevent moisture from entering the power generation layer of the photoelectric conversion device 200.
  • the bypass sheet 204 is pressed toward the photoelectric conversion module 202 by the back sheet 208, and the anode electrode and the cathode electrode of the bypass diode 44 are pressed against the back electrode layer 30, so that the anode is not performed without soldering or the like. Good electrical connection between the electrode and cathode electrode and the back electrode layer 30 can be obtained.
  • FIG. 5 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 300 along the direction in which the bypass diode film 204 and the cover member 212 are extended.
  • FIG. 6 is a perspective view of the photoelectric conversion device 300 with the back sheet 208 and the filler 210 removed in order to clearly show the features of the present invention.
  • the bypass diode film 204 covered with the cover member 212 is indicated by a broken line in order to clarify the configuration.
  • the cover member 212 is a tape-like, film-like or sheet-like member made of an insulating material.
  • the cover member 212 preferably has heat resistance enough to withstand the heating in the sealing process of the back sheet 208. Since the heat treatment is performed at about 150 ° C., the cover member 212 is preferably made of, for example, Teflon (registered trademark).
  • the filler 210 does not enter between the second electrode layer 46 and the back electrode layer 30 of the bypass diode 44 when sealing with the back sheet 208, It is possible to prevent the electrical contact between the second electrode layer 46 and the back electrode layer 30 from becoming defective.
  • the photoelectric conversion device of the present embodiment it is possible to prevent the photoelectric conversion cell from being damaged by the bypass diode when a hot spot occurs. Furthermore, the bypass diode can be easily installed when the photoelectric conversion device is manufactured.
  • the photoelectric conversion device 200 includes a photoelectric conversion module 202, an insulating member 214, a bypass diode 206, a back sheet 208, and a filler 210.
  • FIG. 7 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 200 along the extending direction of the insulating member 214 and the bypass diode 206.
  • FIG. 8 shows a perspective view of the photoelectric conversion device 200 with the back sheet 208 and the filler 210 removed.
  • the photoelectric conversion module 202 includes an amorphous silicon photoelectric conversion unit (a) having a substrate 20 as a light incident side and a wide band gap as a transparent electrode layer 22 and a top cell from the light incident side. -Si unit) 24, an intermediate layer 26, and a microcrystalline silicon photoelectric conversion unit ( ⁇ c-Si unit) 28 having a narrower band gap than the a-Si unit 24 and a back electrode layer 30 as a bottom cell are stacked.
  • a tandem photoelectric conversion device in which the a-Si unit 24 and the ⁇ c-Si unit 28 are stacked will be described as an example.
  • a single-type photoelectric conversion device using only one of the a-Si unit 24 and the ⁇ c-Si unit 28 or a photoelectric conversion device to which another type of photoelectric conversion unit is applied may be used.
  • a material having transparency in at least the visible light wavelength region such as a glass substrate or a plastic substrate, can be applied.
  • a transparent electrode layer 22 is formed on the substrate 20.
  • the transparent electrode layer 22 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO).
  • TCO transparent conductive oxide
  • zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 22 can be formed by, for example, a sputtering method or a CVD method.
  • a slit S1 is formed in the transparent electrode layer 22 and patterned into a strip shape.
  • the transparent electrode layer 22 can be patterned into a strip shape using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • the a-Si unit 24 includes silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • Plasma chemical vapor deposition in which a mixed gas obtained by mixing a p-type dopant-containing gas, such as phosphine (PH 3 ), and a mixed gas, such as phosphine (PH 3 ), and a diluent gas, such as hydrogen (H 2 ), is converted into plasma. It can be formed by the method (CVD method).
  • the plasma CVD method for example, an RF plasma CVD
  • An intermediate layer 26 is formed on the a-Si unit 24.
  • the intermediate layer 26 is preferably made of a transparent conductive oxide (TCO) such as zinc oxide (ZnO) or silicon oxide (SiOx). In particular, it is preferable to use zinc oxide (ZnO) or silicon oxide (SiOx) doped with magnesium Mg.
  • TCO transparent conductive oxide
  • ZnO zinc oxide
  • SiOx silicon oxide
  • the intermediate layer 26 can be formed by sputtering, for example.
  • the thickness of the intermediate layer 26 is preferably in the range of 10 nm to 200 nm. The intermediate layer 26 may not be provided.
  • a ⁇ c-Si unit 28 in which a p-type layer, an i-type layer, and an n-type layer are sequentially laminated is formed.
  • the ⁇ c-Si unit 28 includes a silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), a carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 ) formed by a plasma CVD method in which a mixed gas obtained by mixing a p-type dopant-containing gas such as phosphine (PH 3 ) and a dilute gas such as phosphine (PH 3 ) and hydrogen (H 2 ) is formed into a plasma. can do.
  • the plasma CVD method it is preferable to apply, for example, a 13.56 MHz RF plasma CVD method as in the case of the a-Si unit 24.
  • a slit S2 is formed in the a-Si unit 24 and the ⁇ c-Si unit 28 and patterned into a strip shape.
  • a slit S2 is formed by irradiating a position 50 ⁇ m laterally from the position of the slit S1 formed in the transparent electrode layer 22 to form the slit S2, and the a-Si unit 24 and the ⁇ c-Si unit 28 are patterned into strips.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a back electrode layer 30 is formed on the ⁇ c-Si unit 28.
  • the back electrode layer 30 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are sequentially laminated.
  • a transparent conductive oxide (TCO) such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • TCO transparent conductive oxide
  • TCO such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • a material (TCO) doped with impurities is used.
  • zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used.
  • metals such as silver (Ag) and aluminum (Al), can be used.
  • the transparent conductive oxide (TCO) can be formed by, for example, a sputtering method or a CVD method.
  • the back electrode layer 30 is preferably about 1 ⁇ m in total. It is preferable that at least one of the back electrode layers 30 is provided with unevenness for enhancing the light confinement effect.
  • a slit S3 is formed in the back electrode layer 30 and patterned into a strip shape.
  • a slit S3 is formed by irradiating YAG laser to a position 50 ⁇ m lateral from the position of the slit S2 formed in the a-Si unit 24 and the ⁇ c-Si unit 28, and the back electrode layer 30 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the back electrode layer 30 of one photoelectric conversion cell is electrically connected to the transparent electrode layer 22 of the adjacent photoelectric conversion cell via the back electrode layer 30 embedded in the slit S2, and the adjacent photoelectric conversion cells are connected to each other. Are connected in series.
  • the insulating member 214 is a tape-like, film-like or sheet-like member made of an insulating material.
  • the insulating member 214 extends on the back electrode layer 30 of the photoelectric conversion module 202 along the serial connection direction of the photoelectric conversion cells.
  • a plurality of holes 32 are formed in the insulating member 214 at a predetermined pitch P1 along the extending direction, and the holes 32 are used for alignment of the bypass diode 206.
  • the material of the insulating member 214 is preferably Teflon (registered trademark), for example.
  • the holes 32 formed in the insulating member 214 are formed at the same pitch P1 as the pitch P where the bypass diode 206 is disposed.
  • the holes 32 are formed at the same pitch P1 as the pitch P2 of the photoelectric conversion cell arrangement as shown in FIGS. To do.
  • the hole 32 is shaped and sized so that the position of the bypass diode 206 is not spatially displaced when the bypass diode 206 is fitted in the hole 32.
  • the insulating member 214 is arrange
  • the bypass diode 206 is provided to prevent damage to the photoelectric conversion cell when a hot spot occurs in the photoelectric conversion device 200.
  • the bypass diode 206 is connected to the photoelectric conversion cell so that the voltage is applied in a reverse bias state in a state where the photoelectric conversion cell is normally generating power.
  • bypass diode 206 when the bypass diode 206 is provided for each of the photoelectric conversion cells connected in series, the bypass diode 206 is arranged in each of the holes 32 of the insulating member 214 arranged as described above, and the adjacent photoelectric conversion cells are arranged.
  • the anode electrode and the cathode electrode of the bypass diode 206 are respectively connected to the back electrode layer 30.
  • the connection between the back electrode layer 30 and the anode electrode or the cathode electrode may be performed by general soldering or by mechanical pressure bonding by sealing the back sheet 208.
  • the bypass diode 206 may be provided across a plurality of photoelectric conversion cells without providing the bypass diode 206 for each of the photoelectric conversion cells connected in series.
  • holes 32 are provided in the insulating member 214 at a pitch P1 obtained by adding a plurality of photoelectric conversion cells.
  • the hole 32 is sized so as to straddle a plurality of photoelectric conversion cells.
  • the bypass diode 206 is connected to the photoelectric conversion cell so that the voltage is applied in a reverse bias state in a state where the photoelectric conversion cell normally generates power across the plurality of photoelectric conversion cells.
  • the bypass diode 206 can be aligned only by arranging the bypass diode 206 in accordance with the hole 32. Therefore, it is possible to reduce the burden of alignment work of the bypass diode 206.
  • the surface of the back electrode layer 30 is covered with the back sheet 208 and sealed with the filler 210.
  • the filler 210 and the back sheet 208 can be resin materials such as EVA and polyimide. Sealing can be performed by covering the back electrode layer 30 coated with the filler 210 with the back sheet 208 and applying pressure to the back sheet 208 toward the back electrode layer 30 while heating to a temperature of about 150 ° C. . This can prevent moisture from entering the power generation layer of the photoelectric conversion device 200.
  • the insulating member 214 has heat resistance enough to withstand the heating in such a sealing process. Since the heat treatment is performed at about 150 ° C., the insulating member 214 is preferably made of, for example, Teflon (registered trademark).
  • the thickness of the insulating member 214 is smaller than the thickness of the bypass diode 206.
  • the bypass diode 206 When the bypass diode 206 is disposed, the anode electrode and the cathode electrode are in contact with the surface of the back electrode layer 30, so that when the back sheet 208 is sealed by applying pressure to the back sheet 208, the bypass diode 206 is connected to the back electrode layer 30.
  • the anode electrode and the cathode electrode are pressed against the back electrode layer 30, and a good electrical connection between the anode electrode and the cathode electrode and the back electrode layer 30 can be obtained without performing a soldering operation or the like. it can.
  • the thickness of the insulating member 214 is 0.3 to 0.7 times the thickness of the bypass diode 206. In this way, by making the thickness of the insulating member 214 about half the thickness of the bypass diode 206, the step from the back electrode layer 30 to the bypass diode 206 is smoothly connected by the step of the insulating member 214, and each step is The width of can be reduced. Thereby, the lift of the back sheet 208 due to a step can be suppressed, and the unevenness of the back sheet 208 can be reduced.
  • the insulating member 214 can be attached to the back electrode layer 30 with an adhesive, and the position of the insulating member 214 may be shifted when the bypass diode 206 is disposed. Therefore, the insulating member 214 and the bypass diode 206 can be aligned more accurately and quickly.
  • FIG. 11 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 300 along the extending direction of the insulating member 214, the bypass diode 206, and the cover member 212.
  • FIG. 12 is a perspective view of the photoelectric conversion device 300 with the back sheet 208 and the filler 210 removed in order to clearly show the features of the present invention.
  • the bypass diode 206 covered with the cover member 212 and the hole 32 of the insulating member 214 are indicated by broken lines in order to clarify the configuration.
  • the cover member 212 is a tape-like, film-like or sheet-like member made of an insulating material. Like the insulating member 214, the cover member 212 preferably has heat resistance enough to withstand the heating in the sealing process of the back sheet 208. Since the heat treatment is performed at about 150 ° C., the cover member 212 is preferably made of, for example, Teflon (registered trademark).
  • Covering the insulating member 214 and the bypass diode 206 with the cover member 212 can prevent the hole 32 of the insulating member 214 from being filled with the filler 210 when sealing with the back sheet 208.
  • the filler 210 does not enter between the anode and cathode electrodes of the bypass diode 206 and the back electrode layer 30, and the electrical contact between the anode and cathode electrodes and the back electrode layer 30 becomes poor. Can be prevented.
  • the photoelectric conversion device of the present embodiment it is possible to prevent the photoelectric conversion cell from being damaged by the bypass diode when a hot spot occurs. Furthermore, the bypass diode can be easily installed when the photoelectric conversion device is manufactured.
  • the photoelectric conversion device 200 in the third embodiment includes a photoelectric conversion module 202, a bypass diode 206, a back sheet 208, and a filler 216a.
  • FIG. 13 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 200 along the extending direction of the bypass diode 206.
  • FIG. 14 is a perspective view showing a state in which the back sheet 208 of the photoelectric conversion device 200 is removed.
  • the photoelectric conversion module 202 includes an amorphous silicon photoelectric conversion unit (a) having a substrate 20 as a light incident side and a wide band gap as a transparent electrode layer 22 and a top cell from the light incident side. -Si unit) 24, an intermediate layer 26, and a microcrystalline silicon photoelectric conversion unit ( ⁇ c-Si unit) 28 having a narrower band gap than the a-Si unit 24 and a back electrode layer 30 as a bottom cell are stacked.
  • a tandem photoelectric conversion device in which the a-Si unit 24 and the ⁇ c-Si unit 28 are stacked will be described as an example.
  • a single-type photoelectric conversion device using only one of the a-Si unit 24 and the ⁇ c-Si unit 28 or a photoelectric conversion device to which another type of photoelectric conversion unit is applied may be used.
  • a material having transparency in at least the visible light wavelength region such as a glass substrate or a plastic substrate, can be applied.
  • a transparent electrode layer 22 is formed on the substrate 20.
  • the transparent electrode layer 22 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO).
  • TCO transparent conductive oxide
  • zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 22 can be formed by, for example, a sputtering method or a CVD method.
  • the slit S1 is formed in the transparent electrode layer 22 and is patterned into a strip shape.
  • the transparent electrode layer 22 can be patterned into a strip shape using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • the a-Si unit 24 includes silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • SiH 4 silane
  • Si 2 H 6 disilane
  • SiH 2 Cl 2 dichlorosilane
  • carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • Plasma chemical vapor deposition in which a gas mixture is formed by mixing a mixed gas obtained by mixing a p-type dopant-containing gas such as phosphine (PH 3 ) or the like and a diluent gas such as hydrogen (H 2 ). It can be formed by a growth method (CVD method).
  • the plasma CVD method for example, an RF plasma CVD method of 13.56 MHz is preferably applied.
  • the intermediate layer 26 is formed on the a-Si unit 24.
  • the intermediate layer 26 is preferably made of a transparent conductive oxide (TCO) such as zinc oxide (ZnO) or silicon oxide (SiO x ).
  • TCO transparent conductive oxide
  • ZnO zinc oxide
  • SiO x silicon oxide
  • Mg magnesium
  • the intermediate layer 26 can be formed by sputtering, for example.
  • the thickness of the intermediate layer 26 is preferably in the range of 10 nm to 200 nm. The intermediate layer 26 may not be provided.
  • a ⁇ c-Si unit 28 in which a p-type layer, an i-type layer, and an n-type layer are sequentially laminated is formed.
  • the ⁇ c-Si unit 28 includes a silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), a carbon-containing gas such as methane (CH 4 ), diborane (B 2 H 6 )
  • Plasma CVD method in which a gas mixture is formed by mixing a gas mixture of a p-type dopant containing gas such as phosphine (PH 3 ) and an n-type dopant containing gas such as phosphine (PH 3 ) and a diluent gas such as hydrogen (H 2 ).
  • the plasma CVD method it is preferable to apply, for example, a 13.56 MHz RF plasma CVD method as in the case of the a-S
  • a slit S2 is formed in the a-Si unit 24 and the ⁇ c-Si unit 28 and patterned into a strip shape.
  • the slit S2 is formed by irradiating a position 50 ⁇ m laterally from the position of the slit S1 formed in the transparent electrode layer 22 to form the slit S2, and the a-Si unit 24, the intermediate layer 26 and the ⁇ c-Si unit 28 are patterned into a strip shape .
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a back electrode layer 30 is formed on the ⁇ c-Si unit 28.
  • the back electrode layer 30 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are sequentially laminated.
  • TCO transparent conductive oxide
  • SnO 2 tin oxide
  • ZnO zinc oxide
  • ITO indium tin oxide
  • impurities are used.
  • zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used.
  • metals, such as silver (Ag) and aluminum (Al) can be used.
  • the transparent conductive oxide (TCO) can be formed by, for example, a sputtering method or a CVD method.
  • the back electrode layer 30 is preferably about 1 ⁇ m in total. It is preferable that at least one of the back electrode layers 30 is provided with unevenness for enhancing the light confinement effect.
  • a slit S3 is formed in the back electrode layer 30 and patterned into a strip shape.
  • a slit S3 is formed by irradiating YAG laser to a position 50 ⁇ m lateral from the position of the slit S2 formed in the a-Si unit 24 and the ⁇ c-Si unit 28, and the back electrode layer 30 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the back electrode layer 30 of one photoelectric conversion cell 201 is electrically connected to the transparent electrode layer 22 of the adjacent photoelectric conversion cell 201 via the back electrode layer 30 embedded in the slit S2, and the adjacent photoelectric conversion is performed.
  • the cells 201 and 201 are the photoelectric conversion module 202 connected in series.
  • the filler 216a is a film-like or sheet-like member made of an insulating material having thermoplasticity.
  • the material of the filler 216a is preferably, for example, an EVA resin, an ethylene resin such as EEA, PVB, silicone, urethane, acrylic, or an epoxy resin.
  • As the filling material 216a a material having approximately the same size as the substrate 20 is used. Note that the thickness of the filler 216a is preferably equal to or less than the thickness of the bypass diode 206, and preferably equal to the thickness of the bypass diode 206.
  • the filler 216 a is disposed so as to cover almost the entire surface of the back electrode layer 30 of the photoelectric conversion module 202.
  • a plurality of holes 32 are formed in the filling material 216a at a predetermined pitch P1 along the extending direction, and the holes 32 are used for alignment of the bypass diode 206.
  • the holes 32 formed in the filler 216a are formed at the same pitch P2 as the bypass diode 206.
  • the holes 32 are formed at the same pitch P2 as the arrangement pitch P1 of the photoelectric conversion cells 201 as shown in FIG. .
  • the hole 32 is shaped and sized so that the position of the bypass diode 206 is not spatially displaced when the bypass diode 206 is disposed in the hole 32.
  • the filler 216a is arrange
  • the bypass diode 206 is provided in the hole 32 of the filler 216a in order to prevent damage to the photoelectric conversion cell 201 when a hot spot occurs in the photoelectric conversion device 200.
  • the bypass diode 206 is connected to the photoelectric conversion cell 201 so that the voltage is applied to the bypass diode 206 in a reverse bias state in a state where the photoelectric conversion cell 201 is normally generating power.
  • an adhesive is applied to a part of the filler 216a or a double-sided tape is applied, and the filler 216a is applied to the back electrode layer 30. Temporarily fix it.
  • bypass diode 206 when the bypass diode 206 is provided for each of the photoelectric conversion cells 201 connected in series, the bypass diode 206 is disposed in each of the holes 32 provided in the filler 216a as described above, and the adjacent photoelectric conversion cells 201 are arranged.
  • the anode electrode and the cathode electrode of the bypass diode 206 are connected to the back electrode layer 30 of the conversion cells 201 and 201, respectively.
  • the connection between the back electrode layer 30 and the anode electrode or the cathode electrode may be performed by general soldering or by mechanical pressure bonding by sealing the back sheet 208.
  • the bypass diode 206 may be provided so as to straddle the plurality of photoelectric conversion cells 201,... Without providing the bypass diode 206 for each of the photoelectric conversion cells 201,.
  • holes 32 are provided in the filler 216a at a pitch P3 obtained by adding a plurality of photoelectric conversion cells 201,.
  • the hole 32 is sized so as to straddle the plurality of photoelectric conversion cells 201.
  • the bypass diode 206 performs photoelectric conversion so that the voltage is applied to the bypass diode 206 in a reverse bias state in a state where the photoelectric conversion cell 201 is normally generating power across the plurality of photoelectric conversion cells 201. Connect to cell 201.
  • the back sheet 208 is made of a laminated body made of PET / Al foil / PET, a single layer of a resin such as fluorine resin (ETFE, PVDF, PCTFE, etc.), PC, PET, PEN, PVF, acrylic, or a metal foil.
  • a resin such as fluorine resin (ETFE, PVDF, PCTFE, etc.)
  • PC PET, PEN, PVF, acrylic
  • a flexible and weather-resistant material having a sandwiched structure is used.
  • the back sheet 208 is disposed so as to cover the bypass diode 206 disposed on the back electrode layer 30 using the filler 216a.
  • a frame body made of Al may be provided on the outer peripheral portion of the photovoltaic device 200 according to the third embodiment via an elastic body such as butyl rubber or a resin such as silicone.
  • the thickness of the filler 216a is made equal to the thickness of the bypass diode 206.
  • the bypass diode 206 is always in contact with the back sheet 208 in the step of heating and pressurizing the laminate composed of the photoelectric conversion module 203, the filler 216a, the bypass diode 206, and the back sheet 208.
  • the bypass diode 206 is pressed from the back sheet 208 toward the back electrode layer 30, so that the anode electrode and the cathode electrode of the bypass diode 206 can always touch the surface of the back electrode layer 30. Therefore, good electrical connection between the anode and cathode electrodes and the back electrode layer 30 can be obtained without performing operations such as soldering.
  • the thickness of the filler 216a is made equal to the thickness of the bypass diode 206.
  • a filler 216a having a size substantially equal to that of the substrate 20 is used.
  • the bypass diode 206 can be formed in a predetermined manner simply by arranging the substrate 20 and the ends and corners of the filler 216a to overlap. Therefore, the filler 216a and the bypass diode 206 can be aligned more accurately and quickly.
  • the filler 216a is temporarily fixed to the back electrode layer 30 by applying an adhesive on the surface in contact with the back electrode layer 30 or applying a double-sided tape. Thereby, the filler 216a can be disposed on the back electrode layer 30 of the photoelectric conversion module 202, and the displacement of the filler 216a that occurs when the bypass diode 206 is disposed in the hole 32 of the filler 216a can be prevented. It becomes. As a result, the bypass diode 206 can be disposed in the hole 32 of the filler 216a more accurately and quickly.
  • a hole 32 is formed in the filler 216 a based on the interval between the photoelectric conversion cells 201, 201, and the bypass diode 206 is disposed in the hole 32.
  • bypass diode 206 By simply placing the bypass diode 206 in the hole 32, the bypass diode 206 can be aligned. Therefore, it is possible to reduce the burden of the alignment operation of the bypass diode 206 and to align the bypass diode 206 more quickly.
  • the bypass diode 206 is disposed in the hole 32 of the filler 216a, and the photoelectric converter 200 is formed while heating and melting the filler 216a and releasing the air by applying pressure. Thereby, it can embed with the filler 216a so that a space is not formed around the bypass diode 206. As a result, it is possible to prevent a space from being formed around the bypass diode 206, and to better prevent moisture from entering the photoelectric conversion module 202.
  • FIG. 17 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 300 along the extending direction of the filler 210, the bypass diode 206, and the filler 212.
  • FIG. 17 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 300 along the extending direction of the filler 210, the bypass diode 206, and the filler 212.
  • the filler 216a is a tape-like, film-like or sheet-like member made of an insulating material having heat melting property.
  • the filler 216a is not limited to a film shape or a sheet shape, and may be a tape shape and may not be approximately the same size as the substrate 20.
  • the material of the filler 216a is preferably, for example, an EVA resin, an ethylene resin such as EEA, PVB, silicone, urethane, acrylic, or an epoxy resin.
  • a plurality of holes 32 are formed in the filler 216a at a predetermined pitch P2 along the extending direction.
  • the bypass diode 206 is disposed in the hole 32, and the bypass diode 206 is disposed on the back electrode layer 30.
  • an adhesive is applied to a part of the filler 216a or a double-sided tape is applied, and the filler 216a is applied to the back electrode layer 30. Temporarily fix it.
  • the filler 216b is disposed on the stacked body in which the bypass diode 206 is disposed on the back electrode layer 30 of the photoelectric conversion module 202 formed on the substrate 20 using the filler 216a.
  • the filler 216b is a tape-like, film-like or sheet-like member made of an insulating material having heat melting property.
  • the filler 216b is made of the same material as the filler 216a and has a size approximately equal to that of the substrate 20. Note that the thickness of the filler 216b is preferably thicker than that of the filler 216a.
  • a non-heat-meltable member in the form of a tape, film or sheet made of an insulating material having a size approximately equal to or larger than that of the filler 216a and not larger than the filler 216b is provided between the fillers 216a and 216b. You may arrange.
  • the back sheet 208 is disposed so as to cover the filler 216b.
  • a pressure is applied to the back sheet 208 toward the back electrode layer 30 while heating the laminated body including the photoelectric conversion module 203, the filler 216 a, the bypass diode 206, the filler 216 b, and the back sheet 208 to a temperature of about 150 ° C.
  • the filler 216a and the filler 216b are melted and integrated to fix the photoelectric conversion cell 201 between the substrate 20 and the back sheet 20, and the photoelectric conversion device 300 according to the fourth embodiment is completed. To do.
  • the thickness of the filler 216a is made equal to the thickness of the vibrator ode 206.
  • the total thickness of the filler 216b and the filler 216a is made thicker than that of the bypass diode 206.
  • the photoelectric conversion device of the present invention it is possible to prevent the photoelectric conversion module from being damaged by the bypass diode when a hot spot occurs, and to reduce the reliability caused by providing the bypass diode. Can be suppressed. Furthermore, the bypass diode can be easily installed when the photoelectric conversion device is manufactured.

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  • Life Sciences & Earth Sciences (AREA)
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  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un dispositif de conversion photoélectrique dans lequel une diode de dérivation peut être installée facilement. Afin d'empêcher la survenance d'une fracture d'un module de conversion photoélectrique à l'aide d'une diode de dérivation lorsqu'il se produit un phénomène de point chaud, le dispositif de conversion photoélectrique comprend un module de conversion photoélectrique (202) qui comprend des cellules de conversion photoélectrique divisées, connectées en série, et un film de diode de dérivation (204) qui porte sur une de ses surfaces une diode de dérivation (44) comprenant au moins une couche p et une couche n stratifiées l'une sur l'autre. Le film de diode de dérivation (204) s'étend dans la direction de la connexion en série, si bien que la diode de dérivation (44) peut se trouver à cheval sur des cellules de conversion photoélectrique voisines.
PCT/JP2011/051731 2010-03-16 2011-01-28 Dispositif de conversion photoélectrique et procédé de production de celui-ci WO2011114781A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010-059172 2010-03-16
JP2010058706A JP2011192864A (ja) 2010-03-16 2010-03-16 光電変換装置
JP2010059172A JP2011192890A (ja) 2010-03-16 2010-03-16 光電変換装置
JP2010-058706 2010-03-16
JP2010127097A JP2011253954A (ja) 2010-06-02 2010-06-02 光電変換装置およびその製造方法
JP2010-127097 2010-06-02

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WO2014057697A1 (fr) * 2012-10-10 2014-04-17 三菱電機株式会社 Module de batterie solaire à film mince intégré
EP3428974A4 (fr) * 2017-05-19 2020-02-12 Miasole Photovoltaic Technology Co., Ltd. Ensemble batterie photovoltaïque à film mince

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JPH05152596A (ja) * 1991-11-29 1993-06-18 Sharp Corp 太陽電池モジユール
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JP2006165172A (ja) * 2004-12-06 2006-06-22 Canon Inc 枠材つき太陽電池モジュール
JP2009527123A (ja) * 2006-09-04 2009-07-23 エルジー エレクトロニクス インコーポレイティド バイパスダイオードを包含する薄膜型太陽電池セル及びその製造方法

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JPS6184874A (ja) * 1984-09-28 1986-04-30 ザ　スタンダード　オイル　カンパニー 光電池モジユール用バイパスダイオードアセンブリー
JPH05152596A (ja) * 1991-11-29 1993-06-18 Sharp Corp 太陽電池モジユール
JP2005268719A (ja) * 2004-03-22 2005-09-29 Sharp Corp 薄膜太陽電池
JP2006165168A (ja) * 2004-12-06 2006-06-22 Canon Inc 太陽電池モジュールおよび太陽電池モジュールの製造方法
JP2006165172A (ja) * 2004-12-06 2006-06-22 Canon Inc 枠材つき太陽電池モジュール
JP2009527123A (ja) * 2006-09-04 2009-07-23 エルジー エレクトロニクス インコーポレイティド バイパスダイオードを包含する薄膜型太陽電池セル及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014057697A1 (fr) * 2012-10-10 2014-04-17 三菱電機株式会社 Module de batterie solaire à film mince intégré
EP3428974A4 (fr) * 2017-05-19 2020-02-12 Miasole Photovoltaic Technology Co., Ltd. Ensemble batterie photovoltaïque à film mince

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