WO2012035780A1 - Convertisseur photoélectrique - Google Patents

Convertisseur photoélectrique Download PDF

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Publication number
WO2012035780A1
WO2012035780A1 PCT/JP2011/005242 JP2011005242W WO2012035780A1 WO 2012035780 A1 WO2012035780 A1 WO 2012035780A1 JP 2011005242 W JP2011005242 W JP 2011005242W WO 2012035780 A1 WO2012035780 A1 WO 2012035780A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
layer
slit
conversion device
transparent electrode
Prior art date
Application number
PCT/JP2011/005242
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English (en)
Japanese (ja)
Inventor
竜也 桐山
厚志 福島
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2012035780A1 publication Critical patent/WO2012035780A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a photoelectric conversion device.
  • the photoelectric conversion device 300 described in Patent Document 1 includes a transparent electrode layer 112, a first photoelectric conversion layer 114, an intermediate layer 116, a second photoelectric conversion layer 118, and a back surface on a substrate 110. It has a structure in which electrodes 120 are sequentially stacked.
  • the transparent electrode layer 112 formed on the substrate 110 is divided by the first slit S1 and has a strip shape.
  • the first photoelectric conversion layer 114 made of amorphous silicon, the intermediate layer 116, and the second photoelectric conversion layer 118 made of microcrystalline silicon formed so as to cover the transparent electrode layer 112 are formed in a place away from the first slit S1.
  • the third slit S3 is divided into a plurality of pieces.
  • the third slit S3 is embedded by the back electrode 120 formed on the second photoelectric conversion layer 118, and the back electrode 120 and the transparent electrode layer 112 of another adjacent photoelectric conversion device are electrically connected.
  • the first photoelectric conversion layer 114, the intermediate layer 116, the second photoelectric conversion layer 118, and the back electrode 120 are divided by forming a fourth slit S4 on the opposite side of the first slit S1 with respect to the third slit S3.
  • a plurality of photoelectric conversion layers are provided as a laminate that contributes to photoelectric conversion, and most of the incident light contributes to photoelectric conversion.
  • Such a plurality of photoelectric conversion layers can contribute a part of the light transmitted without contributing to the photoelectric conversion by the photoelectric conversion layer provided on the light incident side to the photoelectric conversion by the other photoelectric conversion layers. Therefore, the amount of light absorbed in the photoelectric conversion layer increases.
  • an intermediate layer made of a light-transmitting conductive material is provided between a plurality of photoelectric conversion layers, and incident light contributes to power generation.
  • incident light contributes to power generation.
  • a leak current is generated at the contact surface between the intermediate layer 116 and the back electrode 120, and a loss occurs when taking out the electric power generated by the photoelectric conversion layer.
  • the third slit S3 is formed in a linear shape, the contact area between the intermediate layer 116 and the back electrode 120 embedded in the third slit S3 is large, and the power loss due to the leakage current is large. And the loss of the generated electric power becomes conspicuous as the power generation efficiency of the photoelectric conversion device is improved, and hinders the improvement of the power generation efficiency of the photoelectric conversion device.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a solar cell with improved power generation efficiency.
  • One aspect of the photoelectric conversion device of the present invention is configured by sequentially laminating a transparent electrode layer, a first photoelectric conversion layer, an intermediate layer, a second photoelectric conversion layer, and a back electrode on a substrate.
  • a plurality of photoelectric conversion cells are provided, and one back electrode of the adjacent photoelectric conversion cell and the other transparent electrode layer are connected by a plurality of conductors.
  • FIG. 1 to 3 show a configuration of the photoelectric conversion apparatus 100 according to the first embodiment of the present invention.
  • FIG. 1 is a plan view of the photoelectric conversion device 100 as viewed from the back side opposite to the light receiving surface.
  • FIG. 2 is a cross-sectional view taken along line AA and line BB in FIG.
  • FIG. 3 is a cross-sectional view for illustrating a manufacturing process along line BB in FIG.
  • the dimensions of each part are shown different from actual ones in order to clearly show the configuration.
  • the photoelectric conversion device 100 includes a substrate 10, a transparent electrode layer 12, a first photoelectric conversion layer 14, an intermediate layer 16, a second photoelectric conversion layer 18, and a back electrode 20.
  • the substrate 10 is a member that supports the photoelectric conversion device 100. Since the photoelectric conversion device 100 is configured to generate light by making light incident from the substrate 10 side, the substrate 10 is made of a material having transparency in at least a visible light wavelength region, such as a glass substrate or a plastic substrate.
  • the transparent electrode layer 12 is formed on the substrate 10.
  • the transparent electrode layer 12 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO).
  • TCO transparent conductive oxide
  • zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 12 can be formed by sputtering or chemical vapor deposition (CVD).
  • the transparent electrode layer 12 is patterned into a strip shape.
  • the first slit S1 is formed and divided in the transparent electrode layer 12 along the vertical direction of FIG.
  • the transparent electrode layer 12 can be patterned using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • a first photoelectric conversion layer 14 is formed by sequentially laminating an amorphous silicon thin film of a p-type layer, an i-type layer, and an n-type layer on the transparent electrode layer 12.
  • An intermediate layer 16 is formed on the first photoelectric conversion layer 14.
  • a second photoelectric conversion layer 18 is formed by sequentially stacking a p-type layer, an i-type layer, and an n-type microcrystalline silicon thin film on the intermediate layer 16.
  • the first photoelectric conversion layer 14 is an amorphous silicon thin film photoelectric conversion layer
  • the second photoelectric conversion layer 18 is a microcrystalline silicon photoelectric conversion layer, but is not limited thereto.
  • the first photoelectric conversion layer 14 and the second photoelectric conversion layer 18 may use various compounds such as gallium arsenide and CIS (calcobylite) in addition to silicon-based materials such as amorphous silicon and microcrystalline silicon.
  • silicon oxide (SiO), zinc oxide (ZnO), or the like can be used for the intermediate layer 16 provided between the plurality of photoelectric conversion layers in order to obtain a light confinement effect.
  • a tandem type in which two photoelectric conversion layers are stacked is used.
  • the present invention is not limited thereto, and a triple type in which three photoelectric conversion layers are stacked, or a layer in which a plurality of photoelectric conversion layers are stacked may be used. it can.
  • the amorphous silicon thin film photoelectric conversion layer and the microcrystalline silicon photoelectric conversion layer include silicon-containing gases such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), diborane (B 2 H 6 ), and the like. It is formed by a plasma CVD method in which a mixed gas obtained by mixing a p-type dopant-containing gas, an n-type dopant-containing gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) into a plasma is formed. It can.
  • a 13.56 MHz parallel plate RF plasma CVD method is preferably applied.
  • a plurality of contact holes 22 that penetrates the first photoelectric conversion layer 14, the intermediate layer 16, and the second photoelectric conversion layer 18 and expose the transparent electrode layer 12 are provided.
  • a contact hole 22 is formed in a broken line shape by irradiating a YAG laser at a position 50 ⁇ m lateral from the first slit S1 dividing the transparent electrode layer 12.
  • the contact holes 22 have a width of about 10 ⁇ m to 200 ⁇ m, and a plurality of contact holes 22 are provided so as to be spaced from each other by about 0.3 mm to 10 mm in the extending direction of the first slit S1.
  • a YAG laser used for forming the contact hole 22 is preferably one having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz.
  • the contact hole 22 according to the present embodiment is circular.
  • the shape of the contact hole 22 is not limited to a circular shape, and may be an elliptical shape, a polygonal shape (square, rectangular, pentagonal, hexagonal) or the like.
  • the back electrode 20 is formed on the second photoelectric conversion layer 18. At this time, the back electrode 20 is formed so as to cover the second photoelectric conversion layer 18 and fill the contact hole 22. As a result, the transparent electrode layer 12 and the back electrode 20 are electrically connected via the contact hole 22.
  • the conductor in the claims corresponds to the back electrode 20 filled in the contact hole 22.
  • the back electrode 20 can be a single layer or a laminate having conductivity, and preferably has a structure in which a transparent conductive oxide and a reflective metal are laminated in this order.
  • transparent conductive oxide transparent conductive oxides such as tin oxide, zinc oxide and indium tin oxide, or those doped with impurities are used.
  • zinc oxide doped with aluminum as an impurity may be used.
  • a reflective metal metals, such as silver (Ag) and aluminum (Al), are used.
  • the transparent conductive oxide and the reflective metal can be formed by, for example, a sputtering method or a CVD method. It is preferable that at least one of the transparent conductive oxide and the reflective metal is provided with unevenness for enhancing the light confinement effect.
  • the fourth slit S4 that divides the first photoelectric conversion layer 14, the intermediate layer 16, the second photoelectric conversion layer 18, and the back electrode 20 is irradiated with a YAG laser and formed. To do.
  • the fourth slit S4 is divided into a plurality of photoelectric conversion cells 50.
  • the fourth slit S4 is formed on the opposite side of the first slit S1 with respect to the plurality of contact holes 22. At this time, in order to reduce the invalid area that does not contribute to photoelectric conversion, the first slit S1 and the fourth slit S4 are formed so as to partially overlap.
  • the fourth slit S4 is formed in a wavy line so that the fourth slit S4 overlaps the first slit S1, and the fourth slit S4 is formed in the first slit S1 and the fourth slit S4.
  • the contact hole 22 is arranged in the enclosed region 24.
  • the wavy line shape includes not only the shape shown in this embodiment mode but also shapes such as a sine wave, a rectangular wave, a triangular wave, and a sawtooth wave.
  • the YAG laser used for forming the fourth slit S4 is preferably one having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz.
  • the contact hole 22 may be disposed.
  • the photoelectric conversion cell 50 in which the transparent electrode layer 12, the first photoelectric conversion layer 14, the intermediate layer 16, the second photoelectric conversion layer 18, and the back electrode 20 are stacked is formed on the substrate 10.
  • the transparent electrode layer 12 and the back electrode 20 of the adjacent photoelectric conversion cell 50 are connected via the contact hole 22.
  • the contact area between the back electrode 20 embedded in the contact hole 22 and the intermediate layer 16 can be reduced as compared with the structure in which the conventional third slit S 3 is formed.
  • middle layer 16 can be reduced, more generated electric power can be taken out, and the output of the photoelectric conversion apparatus 100 can be enlarged.
  • the surface of the transparent electrode layer 12 is formed by the fourth slit S4 in the groove portion where the first slit S1 and the fourth slit S4 overlap.
  • the exposed shape or the shape of the side wall of the transparent electrode layer 12 formed by the first slit S1 is continuous with the side wall formed by the fourth slit without any step.
  • FIG. 8 shows a configuration of a photoelectric conversion apparatus 400 according to a modification of the first embodiment of the present invention.
  • FIG. 8 is a plan view of the photoelectric conversion device 400 as viewed from the back surface opposite to the light receiving surface.
  • the photoelectric conversion device 400 according to the modified example is largely characterized in that the fourth slit S4 ′ is formed linearly. Different.
  • the fourth slit S4 ′ is divided into a plurality of photoelectric conversion cells 50.
  • the fourth slit S4 ′ is formed on the opposite side of the first slit S1 with respect to the plurality of contact holes 22.
  • the photoelectric conversion device 400 configured as described above can achieve the same effects as the photoelectric conversion device 100 described above.
  • FIG. 4 is a plan view of the photoelectric conversion device 100 as viewed from the back side opposite to the light receiving surface.
  • FIG. 5 is a sectional view taken along lines AA and BB in FIG.
  • FIG. 6 is a cross-sectional view for illustrating a manufacturing process along line BB in FIG. 4 to 6, the dimensions of each part are shown in place of actual ones in order to clearly show the configuration, and the same reference numerals are used for the same configurations as those in the first embodiment.
  • the back electrode 20 is formed on the second photoelectric conversion layer 18.
  • the same material as that used in the first embodiment can be used.
  • the first photoelectric conversion layer 14, the intermediate layer 16, and the second photoelectric conversion are formed by irradiating a YAG laser at a position 50 ⁇ m away from the first slit S 1 to form a fourth slit S 4.
  • the layer 18 and the back electrode 20 are patterned into strips. Thereby, a plurality of photoelectric conversion cells 50 are formed.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • connection member 26 is selectively (partially) formed on the side wall of the fourth slit S4 on the first slit S1 side.
  • a plurality of connection members 26 are formed to connect the back electrode 20 and the transparent electrode layer 12 of the adjacent photoelectric conversion cell 50 in series.
  • the conductor in the claims corresponds to the connecting member 26.
  • the connection member 26 is formed so as to hang over the back electrode 20 and is formed so as to increase the contact area between the back electrode 20 and the connection member 26.
  • the connection member 26 has a width of about 10 to 50 ⁇ m, and a conductive material such as a conductive paste formed by mixing a resin material with metal particles such as silver can be used.
  • the connection member 26 is baked at 120 to 200 ° C. after being patterned by inkjet printing or screen printing. In forming the connection member 26, the conductive paste may be patterned and fired after the substrate 10 is heated in order to prevent the conductive paste from spreading to the surroundings.
  • the transparent electrode layer 12, the first photoelectric conversion layer 14, the intermediate layer 16, the second photoelectric conversion layer 18, and the back electrode 20 are stacked on the substrate 10 to form a plurality of photoelectric conversion cells 50.
  • connection member 26 can reduce the contact area between the connection member 26 and the intermediate layer 16 as compared with the contact area between the back electrode 20 and the intermediate layer 16 having a structure in which a conventional slit is formed. Thereby, the leak which generate
  • connection members 26 are formed to connect the back electrode 20 and the transparent electrode layer 12 of the adjacent photoelectric conversion cell 50 in series. That is, in order to connect one back electrode 20 of the adjacent photoelectric conversion cell 50 and the other transparent electrode layer 12, a plurality of connection members 26 are provided on the side wall on the first slit S1 side of the fourth slit S4. Thereby, compared with the case where one back electrode 20 and the other transparent electrode layer 12 of the adjacent photoelectric conversion cell 50 are connected by one connection member, the amount of the material used for the connection member can be reduced. Thus, the material cost of the photoelectric conversion device can be reduced.
  • connection member 26 which connects the several photoelectric conversion cell 50 formed on the big board
  • the connection member 26 is formed by the sputtering method, it is difficult to form the plurality of connection members 26 uniformly on a large substrate.
  • a mask is used to form the plurality of connection members 26, the material for the connection members 26 that is simply sputtered on the entire surface of the substrate 10 is required, and the amount of material used for the connection members 26 cannot be reduced. It was.
  • connection member 26 in the case of forming the connection member 26 using a conductive paste, a plurality of connection members 26 having a uniform film thickness can be formed by an easy method such as a screen printing method even on a large substrate. it can. Further, the connection member 26 can be formed with a small amount of material, and the material cost of the photoelectric conversion device can be reduced.
  • the present invention can be used for photoelectric conversion devices such as solar cells.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un convertisseur photoélectrique (100) comprenant une pluralité de cellules de conversion photoélectrique (50), chacune étant obtenue par superposition d'une couche d'électrode transparente (12), d'une première couche de conversion photoélectrique (14), d'une couche intermédiaire (16), d'une seconde couche de conversion photoélectrique (18) et d'une électrode postérieure (20), dans l'ordre indiqué, sur un substrat (10). L'électrode postérieure (20) d'une cellule de conversion photoélectrique (50) adjacente et la couche d'électrode transparente (12) d'une autre cellule de conversion photoélectrique (50) adjacente sont connectées ensemble par plusieurs liaisons.
PCT/JP2011/005242 2010-09-16 2011-09-16 Convertisseur photoélectrique WO2012035780A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010208180A JP2013243165A (ja) 2010-09-16 2010-09-16 光電変換装置
JP2010-208180 2010-09-16

Publications (1)

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WO2012035780A1 true WO2012035780A1 (fr) 2012-03-22

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WO (1) WO2012035780A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014118863A1 (fr) * 2013-01-31 2014-08-07 パナソニック株式会社 Dispositif photovoltaïque
TWI459574B (zh) * 2013-11-25 2014-11-01 Nexpower Technology Corp High transmittance thin film solar panels
JP2015154071A (ja) * 2014-02-12 2015-08-24 聯相光電股▲ふん▼有限公司 熱破損防止用薄膜太陽電池パネル
CN105637648A (zh) * 2013-09-17 2016-06-01 Lg伊诺特有限公司 太阳能电池
CN112885905A (zh) * 2021-01-29 2021-06-01 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 太阳能电池及其制备方法、太阳能电池组件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6150381A (ja) * 1984-08-18 1986-03-12 Kyocera Corp 太陽電池の製造方法
JPH0851226A (ja) * 1994-08-08 1996-02-20 Sanyo Electric Co Ltd 集積型光起電力装置
JP2010062185A (ja) * 2008-09-01 2010-03-18 Mitsubishi Electric Corp 光電変換装置およびその製造方法
WO2011061950A1 (fr) * 2009-11-17 2011-05-26 三菱電機株式会社 Cellule solaire en couches minces et procédé de fabrication associé

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6150381A (ja) * 1984-08-18 1986-03-12 Kyocera Corp 太陽電池の製造方法
JPH0851226A (ja) * 1994-08-08 1996-02-20 Sanyo Electric Co Ltd 集積型光起電力装置
JP2010062185A (ja) * 2008-09-01 2010-03-18 Mitsubishi Electric Corp 光電変換装置およびその製造方法
WO2011061950A1 (fr) * 2009-11-17 2011-05-26 三菱電機株式会社 Cellule solaire en couches minces et procédé de fabrication associé

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014118863A1 (fr) * 2013-01-31 2014-08-07 パナソニック株式会社 Dispositif photovoltaïque
CN105637648A (zh) * 2013-09-17 2016-06-01 Lg伊诺特有限公司 太阳能电池
TWI459574B (zh) * 2013-11-25 2014-11-01 Nexpower Technology Corp High transmittance thin film solar panels
JP2015103793A (ja) * 2013-11-25 2015-06-04 聯相光電股▲ふん▼有限公司 高光透過性薄膜太陽電池パネル
JP2015154071A (ja) * 2014-02-12 2015-08-24 聯相光電股▲ふん▼有限公司 熱破損防止用薄膜太陽電池パネル
CN112885905A (zh) * 2021-01-29 2021-06-01 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 太阳能电池及其制备方法、太阳能电池组件

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