WO2012029668A1 - Dispositif de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique Download PDF

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Publication number
WO2012029668A1
WO2012029668A1 PCT/JP2011/069335 JP2011069335W WO2012029668A1 WO 2012029668 A1 WO2012029668 A1 WO 2012029668A1 JP 2011069335 W JP2011069335 W JP 2011069335W WO 2012029668 A1 WO2012029668 A1 WO 2012029668A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
wiring
conversion device
electrode layer
layer
Prior art date
Application number
PCT/JP2011/069335
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English (en)
Japanese (ja)
Inventor
聡生 柳浦
Original Assignee
三洋電機株式会社
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Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2012029668A1 publication Critical patent/WO2012029668A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photoelectric conversion device.
  • a photoelectric conversion device in which semiconductor thin films such as amorphous and microcrystals are stacked is used.
  • FIG. 7 shows a cross-sectional view of the basic configuration of a conventional photoelectric conversion device 100.
  • FIG. 7 is a cross-sectional view of an end portion of the photoelectric conversion device 100.
  • the photoelectric conversion device 100 includes a photoelectric conversion cell 102 in which a transparent electrode layer 12, a photoelectric conversion layer 14, and a back electrode 16 are formed on a glass substrate 10 on the light receiving surface side, and the photoelectric conversion device 100.
  • a first current collecting wiring 18 that extends along both ends and collects the electric power generated by the photoelectric conversion cell 102, and a second current collecting wiring that is wired from the first current collecting wiring 18 to the terminal box.
  • an insulating coating material 20 that prevents direct contact between the second current collector wiring 22 and the photoelectric conversion cell 102, and an end sealing resin 24 that is disposed so as to surround the periphery of the photoelectric conversion cell 102.
  • a back glass 26 that seals the back surface of the photoelectric conversion cell 102, the first current collecting wiring 18 and the second current collecting wiring 22, and a filler 28 (between the photoelectric conversion cell 102 and the back glass 26 ( EVA).
  • One embodiment of the present invention includes a plurality of first electrode layers formed on a substrate, a photoelectric conversion layer formed on the first electrode layer, and a second electrode layer formed on the photoelectric conversion layer.
  • a plurality of photoelectric conversion cells connected in parallel, and the current collection wiring is disposed on the periphery of the substrate and is formed so as to cover the end of the first electrode layer. It is a photoelectric conversion device.
  • the power generation efficiency and reliability of the photoelectric conversion device can be improved.
  • FIG. 1 is a plan view of the photoelectric conversion device 200 as viewed from the back side opposite to the light receiving surface.
  • FIG. 2 is a cross-sectional view taken along line AA in FIG.
  • FIG. 3 is a sectional view taken along line BB in FIG.
  • FIG. 1 in order to clearly show the configuration of the photoelectric conversion device 200, components that are not actually seen overlapping are also shown by solid lines.
  • FIGS. 1 to 3 the dimensions of each part are shown different from actual ones in order to clearly show the configuration.
  • the photoelectric conversion device 200 includes a glass substrate 30, a transparent electrode layer 32, a photoelectric conversion layer 34, a back electrode 36, a first current collector wiring 38, a first insulating coating material 40, a second electrode.
  • the current collector wiring 42 is configured to include a back surface protective material 46, a filler 48, an end sealing resin 50, and a terminal box 52.
  • the glass substrate 30 is a member that mechanically supports the photoelectric conversion panel of the photoelectric conversion device 200.
  • a transparent electrode layer 32 is formed on the glass substrate 30.
  • the transparent electrode layer 32 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO). In particular, zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 32 can be formed by a sputtering method or a CVD method.
  • the transparent electrode layer 32 is divided into strips by patterning.
  • the first slit S1 is formed in the transparent electrode layer 32 along the vertical direction in FIG.
  • the transparent electrode layer 32 is divided
  • the second slit S2 is formed and divided in the transparent electrode layer 32 along the horizontal direction of FIG.
  • the transparent electrode layer 32 can be patterned using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • a photoelectric conversion layer 34 is formed by sequentially laminating a p-type layer, an i-type layer, and an n-type silicon thin film on the transparent electrode layer 32.
  • the photoelectric conversion layer 34 can be a thin film photoelectric conversion layer such as an amorphous silicon thin film photoelectric conversion layer or a microcrystalline silicon thin film photoelectric conversion layer.
  • a tandem or triple photoelectric conversion layer in which these photoelectric conversion layers are stacked may be used.
  • an intermediate layer may be sandwiched.
  • the intermediate layer is preferably a transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • ZnO zinc oxide
  • Mg magnesium
  • Amorphous silicon thin film photoelectric conversion layer and microcrystalline silicon thin film photoelectric conversion layer are made of silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), methane (CH 4 ), etc.
  • a mixed gas obtained by mixing a carbon-containing gas, a p-type dopant-containing gas such as diborane (B 2 H 6 ), an n-type dopant-containing gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) is converted into plasma. It can be formed by a plasma chemical vapor deposition method (CVD method) in which a film is formed.
  • CVD method for example, a 13.56 MHz parallel plate RF plasma CVD method is preferably applied.
  • the photoelectric conversion layer 34 is divided into strips by patterning.
  • a YAG laser is irradiated to a position 50 ⁇ m lateral from the first slit S1 dividing the transparent electrode layer 32 to form a third slit S3, and the photoelectric conversion layer 34 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a back electrode 36 is formed on the photoelectric conversion layer 34.
  • the back electrode 36 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are laminated in this order.
  • a transparent conductive oxide (TCO) such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • TCO transparent conductive oxide
  • a material (TCO) doped with impurities is used.
  • zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used.
  • metals such as silver (Ag) and aluminum (Al), are used.
  • the transparent conductive oxide (TCO) and the reflective metal can be formed by, for example, a sputtering method or a CVD method. It is preferable that at least one of the transparent conductive oxide (TCO) and the reflective metal is provided with unevenness for enhancing the light confinement effect.
  • the back electrode 36 is divided into strips by patterning.
  • a YAG laser is irradiated to a position 50 ⁇ m lateral from the position of the third slit S3 for patterning the photoelectric conversion layer 34 to form a fourth slit S4, and the back electrode 36 is patterned into a strip shape.
  • the photoelectric conversion layer 34 is divided in parallel, the photoelectric conversion layer 34 formed in the second slit S2 dividing the transparent electrode layer 32 and the fifth slit S5 dividing the back electrode 36 are formed. And split.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36 are laminated on the glass substrate 30 to form the photoelectric conversion cell 202.
  • the first current collecting wiring 38 and the second current collecting wiring 42 are formed in order to take out the electric power generated by the photoelectric conversion cell 202.
  • the first current collecting wiring 38 is a wiring for collecting current from the photoelectric conversion cells 202 divided in parallel, and the second current collecting wiring 42 connects the first current collecting wiring 38 to the terminal box 52. Wiring.
  • the first current collecting wiring 38 is formed to connect the positive electrodes and the negative electrodes of the photoelectric conversion layer 34 divided in parallel near the end of the photoelectric conversion device 200. Therefore, the first current collection wiring 38 extends along a direction orthogonal to the parallel division direction of the photoelectric conversion layer 34.
  • the 1st current collection wiring 38 is extended along the up-and-down direction on the right-and-left end sides in FIG. However, it is not connected to the photoelectric conversion layer that does not have the photoelectric conversion function in the vicinity of the upper and lower edges shown in FIG.
  • the first current collecting wiring 38 is not formed on the photoelectric conversion cell 202 but extends around the end of the photoelectric conversion cell 202. As shown in FIGS. 2 and 3, the removal region X from which the back electrode 36, the photoelectric conversion layer 34 and the transparent electrode layer 32 are removed, and the back electrode 36 and the photoelectric conversion layer 34 are removed, leaving the transparent electrode layer 32. The removal region Y is formed, and the first current collection wiring 38 is extended so as to straddle the removal regions X and Y.
  • the back electrode 36 and the photoelectric conversion layer 34 in the removal regions X and Y are removed by laser processing.
  • the back electrode 36 and the photoelectric conversion layer 34 formed in the removal regions X and Y can be removed and formed using a YAG laser (wavelength 532 nm).
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the transparent electrode layer 32 in the removal region X is removed by laser processing.
  • the back electrode 36 and the photoelectric conversion layer 34 formed in the removal region X are removed using a YAG laser (wavelength 532 nm).
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the width of the removal region X is not limited to this, but is preferably about 10 mm to 12 mm. Further, the width of the removal region Y is not limited to this, but is preferably 100 ⁇ m or more and 400 ⁇ m or less.
  • the first current collecting wiring 38 is formed.
  • the first current collector wiring 38 is formed so as to straddle the removal regions X and Y. That is, the first current collecting wiring 38 is formed on the removal region Y from the position away from the end of the photoelectric conversion cell 202 over the removal region X. More specifically, it extends from the position of 50 ⁇ m to 200 ⁇ m from the end of the photoelectric conversion cell 202 on the removal region Y to the position of about 10 mm to 12 mm from the end of the substrate 30 on the removal region X. Thus, the first current collector wiring 38 is disposed. Further, the first current collector wiring 38 is disposed so as not to physically contact the photoelectric conversion layer 34.
  • the first current collecting wiring 38 is a conductive tape or sheet. Specifically, the first current collector wiring 38 is preferably a tape or sheet made of a metal material containing 50% or more of aluminum. After the first current collector wiring 38 is disposed, the first current collector wiring 38 and at least one of the transparent electrode layer 32 and the glass substrate 30 are 0.5 J / mm by ultrasonic treatment in at least one of the removal regions X and Y. Melt-bond at about 2 strength. In the ultrasonic treatment, melt bonding is performed by applying ultrasonic waves in a state where the head of the ultrasonic treatment device is pressed against the first current collecting wiring 38 on the removal region X. This ultrasonic treatment corresponds to the ultrasonic welding method. Thereby, the positive electrodes and the negative electrodes of the photoelectric conversion cells 202 connected in series are connected in parallel.
  • the first current collecting wiring 38 is preferably 99.999% or more aluminum wiring, 4 to 6 mm wide and 110 ⁇ m thick.
  • the incidence of light on the photoelectric conversion cell 202 is not hindered, and the power generation efficiency in the photoelectric conversion device 200 is increased. be able to.
  • the reliability of the photoelectric conversion device 200 can be improved, such that the first current collector wiring 38 is hardly peeled off.
  • welding it is possible to more reliably prevent moisture from entering through the interface between the first current collector wiring 38 and the glass substrate 30.
  • a first insulating covering material 40 is provided. As shown in FIGS. 1, 2, and 3, the first insulating covering material 40 is connected to the terminal box 52 in the center from the vicinity of the first current collector wiring 38 provided along the left and right edges of the photoelectric conversion device 200. Is extended along the direction orthogonal to the serial division direction on the back electrode 36 across the slit S4 up to the arrangement position.
  • the first insulating covering material 40 extends in the left-right direction from the vicinity of the left and right first current collecting wires 38 toward the terminal box 52.
  • the first insulating coating material 40 is preferably composed of an insulating material having a resistivity of 10 16 ( ⁇ cm) or more.
  • an insulating material having a resistivity of 10 16 ( ⁇ cm) or more for example, polyester (PE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyvinyl fluoride and the like are suitable.
  • PET polyethylene terephthalate
  • PET polyethylene naphthalate
  • polyvinyl fluoride and the like are suitable.
  • the second current collecting wiring 42 extends from the left and right first current collecting wirings 38 toward the center of the photoelectric conversion device 200 along the first insulating coating material 40. It is extended.
  • the second current collecting wiring 42 may be the same as the first current collecting wiring 38, or may be a copper wiring whose surface is covered with solder.
  • the first insulating coating material 40 is sandwiched between the second current collector wiring 42 and the back electrode 36 so that there is no direct electrical contact between the second current collector wiring 42 and the back electrode 36.
  • one end of the second current collector wiring 42 extends to the side surface of the first current collector wiring 38 and is electrically connected to the side surface of the first current collector wiring 38 as shown in FIGS.
  • the end of the second current collector wiring 42 is electrically welded to the side surface of the first current collector wiring 38 by ultrasonic treatment or the like.
  • the other end of the second current collecting wiring 42 is drawn from the opening of the back glass 46.
  • the other end of the second current collector wiring 42 is connected to the electrode terminal in the terminal box 52. Thereby, the electric power generated by the photoelectric conversion cell 202 is taken out of the photoelectric conversion device 200.
  • the end sealing resin 50 is disposed.
  • the end sealing resin 50 is formed in a region where the first current collection wiring 38 is not disposed in the removal region X around the end of the photoelectric conversion device 200.
  • the end sealing resin 50 is formed so as to be adjacent to the first current collector wiring 38.
  • the end sealing resin 50 has a width of about 6 mm to 10 mm and a thickness of about 0.05 mm to 0.2 mm thicker than the thickness of the filler 48. After the laminating process is finished, the thickness of the end sealing resin 50 becomes substantially the same as that of the filler 48.
  • the end sealing resin 50 is an insulating material having a resistivity of 10 10 ( ⁇ cm) or more.
  • the end sealing resin 50 is preferably made of a material with low moisture permeability in order to prevent moisture from entering from the end of the photoelectric conversion device 200.
  • the end sealing resin 50 is preferably made of a material having a moisture permeability lower than that of the filler 48.
  • the end sealing resin 50 is preferably an epoxy resin or a butyl resin, and more specifically, it is preferable to apply hot melt butyl which is easy to apply and adhere at high temperatures. is there.
  • the end sealing resin 50 it is possible to suppress the intrusion of moisture from the end of the photoelectric conversion device 200, and to improve the reliability of the photoelectric conversion device 200. Furthermore, by forming the 1st current collection wiring 38 adjacent to the edge part sealing resin 50, waterproofness can further be improved and the reliability of the photoelectric conversion apparatus 200 can be improved more. In particular, by forming the first current collector wiring 38 so as to extend from the substrate 30 to the back surface protective material 46, it is possible to enhance the effect of preventing moisture from entering from the end of the photoelectric conversion device 200.
  • the back surface of the photoelectric conversion device 200 is sealed using a back surface protection material 46.
  • a sheet-like filler 48 is disposed on the photoelectric conversion cell 202, the first current collecting wiring 38, the second current collecting wiring 42, and the like.
  • the filler 48 is an insulating resin. More specifically, an insulating material having a resistivity of about 10 14 ( ⁇ cm) is preferable. For example, ethylene vinyl acetate copolymer resin (EVA) or polyvinyl bratil (PVB) is preferable. is there. Further, the back surface of the photoelectric conversion device 200 is covered with the back surface protective material 46.
  • the back surface protective material 46 is arranged in a state where the end portion of the second current collecting wiring 42 is pulled out through the opening provided in the back surface protective material 46.
  • the back surface protective material 46 is preferably made of a material having electrical insulation, low moisture permeability, and high corrosion resistance.
  • the back surface protective material 46 is preferably a glass plate, for example.
  • the back surface protective material 46 is heated while being pressed toward the photoelectric conversion cell 202 side to perform a vacuum laminating process.
  • the heat treatment is performed at about 150 ° C., for example.
  • the back surface of the photoelectric conversion device 200 is sealed by the back surface protection material 46.
  • EVA ethylene vinyl acetate copolymer resin
  • the photoelectric conversion device 200 may be heated in a curing furnace to perform the curing process.
  • the heat treatment in the curing process is preferably performed at 150 ° C. for about 30 minutes, for example.
  • a terminal box 52 is attached in the vicinity of the end of the second current collecting wiring 42 drawn out from the back surface protective material 46 that seals the photoelectric conversion device 200.
  • the terminal box 52 can be attached by bonding using silicone or the like.
  • the end of the second current collecting wiring 42 is electrically connected to the terminal electrode in the terminal box 52 by soldering or the like, and the space in the terminal box 52 is filled with an insulating resin such as silicone and covered.
  • the photoelectric conversion device 200 according to this embodiment is formed.
  • the removal region X when the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36 are formed, a mask member is used to mask the periphery of the glass substrate 30 and perform a film forming process. Also good. Further, in order to form the removal region Y, when the photoelectric conversion layer 34 and the back electrode 36 are formed, the periphery of the glass substrate 30 may be masked using a mask member to perform a film forming process. Further, after forming the photoelectric conversion cell 202, the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36 around the end of the photoelectric conversion device 200 may be removed by sandblasting or etching.
  • the height of the first current collecting wiring 38 may be lowered to the same level as the height of the bent portion of the second current collecting wiring 42.
  • the end sealing resin 50 is formed, it is preferable that the end sealing resin 50 is formed so as to cover the first current collector wiring 38.
  • the wiring 42 may be configured to extend up to the first current collecting wiring 38.
  • the end sealing resin 50 is formed, it is preferable that the end sealing resin 50 is formed so as to cover the second current collecting wiring 42 overlapping the first current collecting wiring 38. .
  • the first current collector wiring 38 is formed from the transparent electrode layer 32 to the substrate 30.
  • the first current collector wiring 38 may be formed from the back electrode 36 to the substrate 30 by covering with the back electrode 36.
  • the transparent electrode layer 38 at the end of the substrate 30 is removed when forming the first slit S1, the photoelectric conversion layer 34 is formed on the removal region, and the removal region when forming the third slit S3.
  • the semiconductor conversion layer 34 formed above and the photoelectric conversion layer 34 formed on the transparent electrode layer 38 adjacent to the removal region are removed.
  • a region where the transparent electrode layer 38 is exposed and a region where the substrate 30 is exposed are formed at the end of the substrate 30, and then the back electrode 36 is formed.
  • the photoelectric conversion layer 34 formed on the transparent electrode layer 30 and a part of the photoelectric conversion layer 34 formed on the subsequent substrate 30 are left so as to remain.
  • the back electrode 36 formed at the end is removed.
  • the end of the transparent electrode layer 32 is also covered with the back electrode 36 at the opposite end of the photoelectric conversion device 200, and the first current collector wiring 38 can be formed from the back electrode 36 to the substrate 30.
  • the first current collector wiring is formed from the back electrode 36 to the substrate 30 so as to cover the end of the transparent electrode layer 32 with the back electrode 36 and further cover the end of the back electrode 36 with the back electrode 36 interposed therebetween.
  • the effect of preventing moisture from entering from the end of the photoelectric conversion device 200 can be further enhanced.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif de conversion photoélectrique comprenant: d'une part une pluralité de cellules de conversion photoélectrique (202) constituées d'une électrode transparente (32) réalisée sur un substrat (30), d'une couche de conversion photoélectrique (34) et d'une électrode en face inférieure (36); et d'autre part un premier câblage collecteur de courant (38) connectant en parallèle la pluralité de cellules de conversion photoélectrique (202). Ce premier câblage collecteur de courant (38) est réalisé de façon à couvrir une extrémité de la couche d'électrode transparente (32) au niveau du pourtour du substrat (30).
PCT/JP2011/069335 2010-08-30 2011-08-26 Dispositif de conversion photoélectrique WO2012029668A1 (fr)

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JP2010191818 2010-08-30
JP2010-191818 2010-08-30

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WO2012029668A1 true WO2012029668A1 (fr) 2012-03-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013153101A (ja) * 2012-01-26 2013-08-08 Kyocera Corp 光電変換モジュール

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310744A (ja) * 1993-04-26 1994-11-04 Fuji Electric Co Ltd 薄膜太陽電池モジュールおよびその接続方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310744A (ja) * 1993-04-26 1994-11-04 Fuji Electric Co Ltd 薄膜太陽電池モジュールおよびその接続方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013153101A (ja) * 2012-01-26 2013-08-08 Kyocera Corp 光電変換モジュール

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