WO2011105167A1 - Dispositif de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique Download PDF

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Publication number
WO2011105167A1
WO2011105167A1 PCT/JP2011/051730 JP2011051730W WO2011105167A1 WO 2011105167 A1 WO2011105167 A1 WO 2011105167A1 JP 2011051730 W JP2011051730 W JP 2011051730W WO 2011105167 A1 WO2011105167 A1 WO 2011105167A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion device
wiring
coating material
insulating coating
Prior art date
Application number
PCT/JP2011/051730
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English (en)
Japanese (ja)
Inventor
悟 小笠原
聡生 柳浦
Original Assignee
三洋電機株式会社
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Filing date
Publication date
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Publication of WO2011105167A1 publication Critical patent/WO2011105167A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a photoelectric conversion device.
  • a photoelectric conversion device in which semiconductor thin films such as amorphous and microcrystals are stacked is used.
  • FIG. 9 shows a cross-sectional view of the basic configuration of a conventional photoelectric conversion device 100.
  • FIG. 9 is a cross-sectional view of the end portion of the photoelectric conversion device 100.
  • the photoelectric conversion device 100 includes a photoelectric conversion cell 102 in which a transparent electrode layer 12, a photoelectric conversion layer 14, and a back electrode 16 are formed on a glass substrate 10, and electric power generated by the photoelectric conversion cell 102.
  • Current collecting wiring 18 for collecting current, back surface of photoelectric conversion cell 102 and back glass 20 for sealing current collecting wiring 18, and filler 22 (EVA) filled between photoelectric conversion cell 102 and back glass 20 ).
  • EVA filler 22
  • One aspect of the present invention is a photoelectric conversion panel in which a photoelectric conversion cell and current collection wiring for collecting current from the photoelectric conversion cell are formed on a substrate, and the substrate facing the photoelectric conversion cell.
  • an insulating coating covering at least a part of the photoelectric conversion cell or current collecting wiring in the vicinity of the end of the photoelectric conversion panel.
  • FIG. 1 is a plan view of the photoelectric conversion device 200 as viewed from the back side opposite to the light receiving surface.
  • FIG. 2 is a cross-sectional view taken along line AA in FIG.
  • FIG. 3 is a sectional view taken along line BB in FIG.
  • FIG. 4 is a cross-sectional view taken along line CC in FIG.
  • FIG. 1 in order to clearly show the configuration of the photoelectric conversion device 200, components that are not actually seen overlapping are also shown by solid lines. Also, in FIGS. 1 to 4, the dimensions of each part are shown different from actual ones in order to clearly show the configuration.
  • the photoelectric conversion device 200 includes a substrate 30, a transparent electrode layer 32, a photoelectric conversion layer 34, a back electrode 36, a first current collector wiring 38, a first insulating coating material 40, and a second current collector.
  • the electric wiring 42, the second insulating coating material 44, the back surface protection material 46, the filler 48, the end sealing resin 50, and the terminal box 52 are configured.
  • the 1st insulation coating material 40 and the 2nd insulation coating material 44 are tape shape, a sheet form, and a film form.
  • the substrate 30 is a member that mechanically supports the photoelectric conversion panel of the photoelectric conversion device 200. Since the photoelectric conversion device 200 is configured to generate power by making light incident from the substrate 30 side, the substrate 30 is made of a material having transparency in at least a visible light wavelength region, such as a glass substrate or a plastic substrate.
  • a transparent electrode layer 32 is formed on the substrate 30.
  • the transparent electrode layer 32 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO). In particular, zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance.
  • the transparent electrode layer 32 can be formed by a sputtering method or a CVD method.
  • the transparent electrode layer 32 is divided into strips by patterning.
  • the first slit S1 is formed in the transparent electrode layer 32 along the vertical direction in FIG.
  • the transparent electrode layer 32 is divided
  • the second slit S2 is formed and divided in the transparent electrode layer 32 along the horizontal direction of FIG.
  • the transparent electrode layer 32 can be patterned using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm 2 , and a pulse frequency of 3 kHz.
  • a photoelectric conversion layer 34 is formed by sequentially laminating a p-type layer, an i-type layer, and an n-type silicon thin film on the transparent electrode layer 32.
  • the photoelectric conversion layer 34 can be a thin film photoelectric conversion layer such as an amorphous silicon thin film photoelectric conversion layer or a microcrystalline silicon thin film photoelectric conversion layer. Alternatively, a tandem or triple photoelectric conversion layer in which these photoelectric conversion layers are stacked may be used.
  • Amorphous silicon thin film photoelectric conversion layer and microcrystalline silicon thin film photoelectric conversion layer are made of silicon-containing gas such as silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), methane (CH 4 ), etc.
  • a mixed gas obtained by mixing a carbon-containing gas, a p-type dopant-containing gas such as diborane (B 2 H 6 ), an n-type dopant-containing gas such as phosphine (PH 3 ), and a diluent gas such as hydrogen (H 2 ) is converted into plasma. It can be formed by a plasma chemical vapor deposition method (CVD method) in which a film is formed.
  • CVD method for example, a 13.56 MHz parallel plate RF plasma CVD method is preferably applied.
  • the photoelectric conversion layer 34 is divided into strips by patterning.
  • a YAG laser is irradiated to a position 50 ⁇ m lateral from the first slit S1 dividing the transparent electrode layer 32 to form a third slit S3, and the photoelectric conversion layer 34 is patterned into a strip shape.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 3 kHz is preferably used.
  • a back electrode 36 is formed on the photoelectric conversion layer 34.
  • the back electrode 36 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are laminated in this order.
  • a transparent conductive oxide (TCO) such as tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or these transparent conductive oxides
  • TCO transparent conductive oxide
  • a material (TCO) doped with impurities is used.
  • zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used.
  • metals such as silver (Ag) and aluminum (Al), are used.
  • the transparent conductive oxide (TCO) and the reflective metal can be formed by, for example, a sputtering method or a CVD method. It is preferable that at least one of the transparent conductive oxide (TCO) and the reflective metal is provided with unevenness for enhancing the light confinement effect.
  • the back electrode 36 is divided into strips by patterning.
  • a YAG laser is irradiated to a position 50 ⁇ m lateral from the position of the third slit S3 for patterning the photoelectric conversion layer 34 to form a fourth slit S4, and the back electrode 36 is patterned into a strip shape.
  • the photoelectric conversion layer 34 is divided in parallel, the photoelectric conversion layer 34 formed in the second slit S2 dividing the transparent electrode layer 32 and the fifth slit S5 dividing the back electrode 36 are formed. And split.
  • a YAG laser having an energy density of 0.7 J / cm 2 and a pulse frequency of 4 kHz is preferably used.
  • the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36 are laminated on the substrate 30 to form the photoelectric conversion cell 202.
  • the first current collecting wiring 38 and the second current collecting wiring 42 are formed in order to take out the electric power generated by the photoelectric conversion cell 202.
  • the first current collecting wiring 38 is a wiring for collecting current from the photoelectric conversion cells 202 divided in parallel, and the second current collecting wiring 42 connects the first current collecting wiring 38 to the terminal box 52. Wiring.
  • the first current collector wiring 38 is extended on the back electrode 36 of the photoelectric conversion cell 202.
  • the first current collector wiring 38 is formed to connect the positive electrodes and the negative electrodes of the photoelectric conversion layer 34 that are divided in parallel near the end of the photoelectric conversion device 200. Therefore, the first current collection wiring 38 extends along a direction orthogonal to the parallel division direction of the photoelectric conversion layer 34. That is, as shown in FIGS. 1, 3, and 4, the photoelectric conversion cells 202 divided in parallel by the slits S2 and S5 are extended on the back electrode 36 across the slits S2 and S5 so as to be connected in parallel. Established.
  • the 1st current collection wiring 38 is extended along the up-and-down direction on the right-and-left end sides in FIG.
  • the first current collector wiring 38 is electrically connected to the back electrode 36 by ultrasonic soldering or the like. Thereby, the positive electrodes and the negative electrodes of the photoelectric conversion cells 202 connected in series are connected in parallel.
  • a first insulating covering material 40 is provided. As shown in FIGS. 1 and 2, the first insulating covering material 40 is arranged from the vicinity of the first current collector wiring 38 provided along the left and right edges of the photoelectric conversion device 200 to the arrangement position of the terminal box 52 in the central portion. Until extending across the slit S4 on the back electrode 36 along the direction perpendicular to the series division direction. Here, as shown in FIG. 1, the first insulating covering material 40 extends in the left-right direction from the vicinity of the left and right first current collecting wires 38 toward the terminal box 52.
  • the first insulating coating material 40 is preferably made of an insulating material having a resistivity of 10 16 ( ⁇ cm) or more.
  • polyester PE
  • polyethylene terephthalate PET
  • polyethylene naphthalate PEN
  • polyimide polyvinyl fluoride and the like are suitable.
  • it is suitable to use the 1st insulation coating material 40 by which the adhesive agent was apply
  • the second current collector wiring 42 extends from the left and right first current collector wires 38 along the first insulating coating material 40 toward the central portion of the photoelectric conversion device 200. Is done.
  • the first insulating covering material 40 is sandwiched between the second current collector wiring 42 and the back electrode 36, and electrical insulation between the second current collector wiring 42 and the back electrode 36 is maintained.
  • one end of the second current collecting wiring 42 extends to the first current collecting wiring 38 and is electrically connected to the first current collecting wiring 38.
  • the second current collecting wiring 42 is preferably electrically connected to the first current collecting wiring 38 by ultrasonic soldering or the like.
  • the other end of the second current collector wiring 42 is connected to an electrode terminal in a terminal box 52 described later. Thereby, the electric power generated by the photoelectric conversion cell 202 is taken out of the photoelectric conversion device 200.
  • the second insulating coating material 44 includes at least a transparent electrode layer 32, a photoelectric conversion layer 34, a back electrode 36, a first current collection wiring 38, and a second current collection wiring 42 that are located in the vicinity of an end sealing resin 50 described later. Provide to cover a part. In particular, at least a part of the transparent electrode layer 32, the photoelectric conversion layer 34, the back electrode 36, the first current collector wiring 38, and the second current collector wiring 42 facing the end sealing resin 50 (the transparent electrode layer 32, It is preferable to cover the photoelectric conversion layer 34, the back electrode 36, the first current collector wiring 38, and the second current collector wiring 42).
  • the second insulating coating material 44 includes the transparent electrode layer 32, the photoelectric conversion layer 34, the back electrode 36, the first current collecting wiring 38, and the second current collecting wiring.
  • the photoelectric conversion layer 34 extends along a direction orthogonal to the parallel division direction so as to cover the end portion of the photoelectric conversion layer 34. Specifically, as shown in FIG. 4, in the region where the second current collector wiring 42 is not provided, the entire surface of the first current collector wiring 38 and the ends of the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36.
  • a second insulating coating material 44 is disposed so as to cover the end.
  • the second insulating coating material 44 is preferably made of an insulating material having a resistivity of 10 16 ( ⁇ cm) or more.
  • polyester PET
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • polyimide polyvinyl fluoride, and the like are preferable.
  • the end sealing resin 50 is disposed.
  • the end sealing resin 50 is disposed in a portion (width of about 7 ⁇ m to 15 ⁇ m) around the end of the photoelectric conversion device 200 where the photoelectric conversion cell 202 is not formed.
  • the transparent electrode layer 32, the photoelectric conversion layer 34, and the back electrode 36 are formed when the photoelectric conversion cell 202 is formed.
  • the film may be formed by masking the periphery of the substrate 30 using a frame member, or the photoelectric conversion cells around the end of the photoelectric conversion device 200 by laser, sandblasting or etching after the photoelectric conversion cell 202 is formed. 202 may be removed.
  • the end sealing resin 50 is provided by applying to the portion where the photoelectric conversion cell 202 around the end of the photoelectric conversion device 200 thus formed is not formed.
  • the end sealing resin 50 is an insulating material having a resistivity of 10 10 ( ⁇ cm) or more.
  • the end sealing resin 50 is preferably made of a material with low moisture permeability in order to prevent moisture from entering from the end of the photoelectric conversion device 200.
  • the end sealing resin 50 is preferably made of a material having a moisture permeability lower than that of the filler 48.
  • the end sealing resin 50 is preferably an epoxy resin or a butyl resin, and more specifically, it is preferable to apply hot melt butyl which is easy to apply and adhere at high temperatures. is there.
  • the end sealing resin 50 has a width of about 6 mm to 10 mm and a thickness of about 0.05 mm to 0.2 mm thicker than the thickness of the filler 48.
  • the back surface of the photoelectric conversion device 200 is sealed with the back surface protective material 46.
  • the back surface protective material 46 is preferably made of a material having electrical insulation, low moisture permeability, and high corrosion resistance.
  • the back surface protective material 46 is preferably a plastic film or a glass plate, for example.
  • a filler 48 is filled between the photoelectric conversion layer 34 and the back surface protective material 46, and the back surface of the photoelectric conversion device 200 is sealed with the back surface protective material 46.
  • the filler 48 is an insulating resin. More specifically, an insulating material having a resistivity of about 10 14 ( ⁇ cm) is preferable. For example, ethylene vinyl acetate copolymer resin (EVA) or polyvinyl bratil (PVB) is preferable. is there.
  • a back surface protective material 46 is disposed so as to cover the back surface of the photoelectric conversion device 200. And after performing the process pulled out from the back surface protective material 46 in order to connect the edge part of the 2nd current collection wiring 42 to the terminal box 52, a pressure is applied from the back surface protective material 46 side, and a vacuum laminating process is performed. .
  • the heat treatment is performed at about 150 ° C., for example.
  • the photoelectric conversion device 200 may be heated in a curing furnace to perform the curing process.
  • the heat treatment in the curing process is preferably performed at 150 ° C. for about 30 minutes, for example.
  • a terminal box 52 is attached in the vicinity of the end portion of the second current collecting wiring 42 drawn out from the back surface protective material 46 that seals the photoelectric conversion device 200.
  • the terminal box 52 can be attached by bonding using silicone or the like.
  • the end of the second current collecting wiring 42 is electrically connected to the terminal electrode in the terminal box 52 by soldering or the like, and the space in the terminal box 52 is filled with an insulating resin such as silicone and covered.
  • the photoelectric conversion device 200 in the present embodiment is formed.
  • the photoelectric conversion device 200 according to the present embodiment by sealing the periphery with the end sealing resin 50, it is possible to prevent moisture and corrosive substances from entering the periphery of the end, and the photoelectric conversion device 200. Can improve the environmental resistance.
  • the photoelectric conversion device 200 at least a part of the transparent electrode layer 32, the photoelectric conversion layer 34, the back electrode 36, the first current collector wiring 38, and the second current collector wiring 42 located in the vicinity of the end sealing resin 50. Since the second insulating coating material 44 is provided so as to cover, the influence of the chemical reaction between the end sealing resin 50 and the filler 48 is suppressed in the portion covered with the second insulating coating material 44. Can do.
  • the second insulating coating material 44 it is preferable not to extend the second insulating coating material 44 to the application region of the end sealing resin 50. This is because when the second insulating coating material 44 enters between the end sealing resin 50 and the substrate 30, the adhesion between the end sealing resin 50 and the substrate 30 is reduced, and the end sealing from the substrate 30 is performed. This is to prevent the stop resin 50 from peeling off and the water vapor transmission barrier performance from deteriorating.
  • FIG. 10 is a cross-sectional view taken along line AA of FIG. 1 in a modification of the photoelectric conversion device 200. As shown in FIG. 10, in this modification, the end portion X of the first insulating coating material 40 and the end portion Z of the second insulating coating material 44 are disposed so as not to overlap each other.
  • the first insulating coating material 40 and the second insulating coating material 44 are arranged so as to satisfy the following three conditions.
  • the 1st insulation coating material 40 is arrange
  • the second insulating coating material 44 is disposed so that the end Z thereof exceeds the end Y of the first current collector wiring 38.
  • the second insulating coating material 44 is disposed so that the end portion Z thereof does not overlap the end portion X of the first insulating coating material 40.
  • the 1st insulating coating material 40 and the 2nd insulating coating material 44 are arrange
  • the step difference on the back surface of the photoelectric conversion device 200 due to the overlap is suppressed, and the followability to unevenness by the laminate material can be enhanced when the back surface of the photoelectric conversion device 200 is sealed.
  • the end portion X of the first insulating coating material 40 and the end portion Y of the second insulating coating material 44 are arranged so as not to overlap each other. .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif de conversion photoélectrique dont la détérioration près des côtés d'extrémité est éliminée. Le dispositif de conversion photoélectrique est pourvu : d'un panneau de conversion photoélectrique, une cellule de conversion photoélectrique (202), et une première ligne de câblage de collection de courant (38) et une seconde ligne de câblage de collection de courant (42), lesdites lignes de câblage collectant des courants à partir de la cellule de conversion photoélectrique (202), étant formées sur un substrat (30) ; d'un matériau de protection de surface arrière (46), qui est disposé pour faire face au substrat (30) de sorte que la cellule de conversion photoélectrique (202) se trouve entre le matériau de protection de surface arrière et le substrat ; d'un matériau de remplissage (48) qui fait adhérer le panneau de conversion photoélectrique et le matériau de protection de surface arrière (46) l'un à l'autre ; d'une résine d'étanchéité de partie d'extrémité (50), qui est prévue entre le panneau de conversion photoélectrique et le matériau de protection de surface arrière (46) sur la partie arrière du panneau de conversion photoélectrique ; et d'un second matériau de couverture d'isolation (44), qui recouvre au moins une partie de la cellule de conversion photoélectrique (202) sur la périphérie de la partie d'extrémité du panneau de conversion photoélectrique, la première ligne de câblage de collection de courant (38) et la seconde ligne de câblage de collection de courant (42).
PCT/JP2011/051730 2010-02-26 2011-01-28 Dispositif de conversion photoélectrique WO2011105167A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010043145 2010-02-26
JP2010-043145 2010-02-26
JP2010-177233 2010-08-06
JP2010177233A JP2011199242A (ja) 2010-02-26 2010-08-06 光電変換装置

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WO2011105167A1 true WO2011105167A1 (fr) 2011-09-01

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JP7373658B2 (ja) * 2019-10-25 2023-11-02 ファースト・ソーラー・インコーポレーテッド 光起電力デバイスおよび製作方法

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