WO2014050193A1 - Module de conversion photoélectrique - Google Patents

Module de conversion photoélectrique Download PDF

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Publication number
WO2014050193A1
WO2014050193A1 PCT/JP2013/062566 JP2013062566W WO2014050193A1 WO 2014050193 A1 WO2014050193 A1 WO 2014050193A1 JP 2013062566 W JP2013062566 W JP 2013062566W WO 2014050193 A1 WO2014050193 A1 WO 2014050193A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
sealing material
protective
sealing
protective material
Prior art date
Application number
PCT/JP2013/062566
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English (en)
Japanese (ja)
Inventor
和仁 西村
善之 奈須野
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シャープ株式会社
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Publication of WO2014050193A1 publication Critical patent/WO2014050193A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • This invention relates to a photoelectric conversion module.
  • Patent Document 1 discloses a sealing resin having adhesiveness higher than that of ethylene-vinyl acetate copolymer resin (EVA) which has been conventionally used as a sealing resin for modules. It is disclosed.
  • EVA ethylene-vinyl acetate copolymer resin
  • Patent Document 2 discloses a frameless solar cell module in which a frame body that supports the module is eliminated.
  • the sealing resin is exposed to the outside through the gap between the substrate glass and the cover glass, moisture easily enters, and in Patent Document 2, the side end of the module is sealed with a metal sealing material. Therefore, the weather resistance performance is maintained.
  • Patent Document 2 has a problem that it involves an increase in cost due to additional members.
  • a photoelectric conversion module is provided in which the cost of the module is reduced and the moisture block performance between the sealing resin and the protective material is improved to increase the reliability.
  • the photoelectric conversion module includes first and second protective materials, a photoelectric conversion device, and a sealing material.
  • the first protective material has a flat plate shape and translucency.
  • the second protective material has a flat plate shape.
  • the photoelectric conversion device is disposed between the first protective material and the second protective material.
  • the sealing material seals the photoelectric conversion device between the first protective material and the second protective material.
  • a sealing material contacts with the 1st and 2nd protective material in the peripheral part of the surface direction of a 1st and 2nd protective material.
  • the contact angle between the end portion on the outer peripheral side of the sealing material in the in-plane direction and the first and second protective materials is larger than 0 degree and smaller than 90 degrees.
  • the end portion on the outer peripheral side of the sealing material in the in-plane direction has a cross-sectional shape that is recessed in a direction from the outer peripheral side in the in-plane direction toward the photoelectric conversion device, and the outer peripheral side of the sealing material in the in-plane direction.
  • the distance between the contact point where the end surface of the sealing material contacts the first and second protective materials and the photoelectric conversion device is longer than the distance between the most depressed point of the sealing material and the photoelectric conversion device.
  • the photoelectric conversion device has a structure in which a light-transmitting first electrode layer, a semiconductor layer, and a second electrode layer are sequentially stacked on the first protective material, and the in-plane of the first protective material.
  • An insulating region is formed at the peripheral edge in the direction.
  • the sealing material is made of a resin having thermoplasticity.
  • the sealing material is made of an ionomer resin or a polyolefin resin.
  • a silane coupling agent is added to the sealing material.
  • the sealing material contains a silane-modified resin.
  • the first and second protective materials are made of glass.
  • the first protective material is made of glass
  • the second protective material is made of a resin sheet.
  • the support base of the photoelectric conversion device is a semiconductor substrate.
  • the support base of the photoelectric conversion device is the first protective material or the second protective material.
  • the photoelectric conversion device includes a semiconductor substrate, a transparent conductive film, and an electrode.
  • the transparent conductive film is disposed on the light receiving surface side surface of the semiconductor substrate.
  • the electrode is disposed on the opposite side of the light receiving surface side of the semiconductor substrate.
  • the sealing material is not present in the peripheral portion on the light receiving surface side of the first protective material.
  • the encapsulant includes particles having a higher thermal conductivity than the encapsulant.
  • the thermal conductivity of the particles is greater than 2 [W / mK].
  • the end portions of the sealing material in the in-plane direction of the first and second protective materials are externally exposed in the in-plane direction of the first and second protective materials.
  • the cross-sectional shape is recessed in the direction toward the conversion device, and the contact angle between the end of the sealing material and the first and second protective materials is greater than 0 degrees and smaller than 90 degrees.
  • FIG. 1 is an exploded perspective view of a photoelectric conversion module according to Embodiment 1 of the present invention. It is sectional drawing of the photoelectric conversion module shown in FIG. It is a top view of a wiring sheet. It is sectional drawing which shows the structure of the photovoltaic cell shown in FIG. 1 and FIG. It is sectional drawing which shows another structure of the photovoltaic cell shown in FIG. 1 and FIG. It is sectional drawing which shows the connection state of a photovoltaic cell and a wiring sheet. It is process drawing which shows the manufacturing method of the photoelectric conversion module shown in FIG. 1 and FIG. It is a 1st process drawing which shows the detailed process of the manufacturing process of the photovoltaic cell shown in FIG.
  • FIG. 6 is an exploded perspective view showing a configuration of a photoelectric conversion module according to Embodiment 2. It is sectional drawing of the photoelectric conversion module shown in FIG. It is process drawing which shows the manufacturing method of the photoelectric conversion module shown to FIG. 19 and FIG. It is a 1st process drawing which shows the detailed process of the manufacturing process of the thin film photovoltaic cell shown in FIG. 21, and the formation process of an integrated structure.
  • FIG. 6 is an exploded perspective view showing a configuration of a photoelectric conversion module according to Embodiment 2. It is sectional drawing of the photoelectric conversion module shown in FIG. It is process drawing which shows the manufacturing method of the photoelectric conversion module shown to FIG. 19 and FIG. It is a 1st process drawing which shows the detailed process of the manufacturing process of the thin film photovoltaic cell shown in FIG. 21, and the formation process of an integrated structure.
  • FIG. 6 is an exploded perspective view showing a configuration of a photoelectric conversion module according to Embodiment 2. It is sectional drawing of the photoelectric conversion module
  • FIG. 22 is a second process diagram showing detailed processes of the manufacturing process of the thin-film solar cell and the formation process of the integrated structure shown in FIG. 21. It is process drawing which shows the detailed process in Embodiment 2 of the electrode attachment process shown in FIG. It is process drawing which shows the detailed process in Embodiment 2 of the mounting process shown in FIG. It is process drawing which shows the detailed process in Embodiment 2 of the sealing process shown in FIG.
  • amorphous phase refers to a state in which silicon (Si) atoms and the like are randomly arranged.
  • the “microcrystalline phase” means a state in which crystal grains such as Si having a grain size of about 10 to 100 nm exist in a random network such as Si atoms.
  • amorphous silicon is expressed as “a-Si”, this notation actually means hydrogenated amorphous silicon containing hydrogen (H) atoms.
  • FIG. 1 is an exploded perspective view of a photoelectric conversion module according to Embodiment 1 of the present invention.
  • a photoelectric conversion module 10 according to Embodiment 1 of the present invention includes protective materials 1 and 5, sealing materials 2 and 4, a photoelectric conversion device 3, and a terminal box 20.
  • the protective material 1 is a protective material on the light receiving surface side of the photoelectric conversion module 10.
  • the protective material 1 has a flat plate shape and is made of a translucent insulator, for example, glass.
  • Sealing material 2 is disposed between protective material 1 and photoelectric conversion device 3. And the sealing material 2 consists of resin which has a flat plate shape and has thermoplasticity. More specifically, the sealing material 2 is made of an ionomer resin or a polyolefin resin.
  • the photoelectric conversion device 3 is disposed between the sealing material 2 and the sealing material 4.
  • the photoelectric conversion device 3 includes a positive electrode terminal 31, a negative electrode terminal 32, and a plurality of solar battery cells 33.
  • the plurality of solar cells 33 are connected in series.
  • the plurality of solar cells 33 are composed of, for example, 24 solar cells 33 and are arranged in a grid pattern.
  • the sealing material 4 is disposed between the photoelectric conversion device 3 and the protective material 5.
  • the sealing material 4 has a flat plate shape and is made of the same material as the sealing material 2.
  • the protective material 5 is a protective material on the back side of the photoelectric conversion module 10.
  • the protective material 5 has a flat plate shape and is made of glass or a back sheet.
  • the terminal box 20 is connected to the positive terminal 31 and the negative terminal 32 of the photoelectric conversion device 3.
  • FIG. 2 is a cross-sectional view of the photoelectric conversion module 10 shown in FIG. In FIG. 2, the positive terminal 31 and the negative terminal 32 of the photoelectric conversion device 3 and the terminal box 20 are omitted.
  • sealing material 2 is in contact with protective material 1 and photoelectric conversion device 3 in the region where photoelectric conversion device 3 is present. Further, the sealing material 2 is integrated with the sealing material 4 at the peripheral portions 1A, 1B, 5A, and 5B of the protective materials 1 and 5 where the photoelectric conversion device 3 does not exist. Then, the integrated sealing material 24 is in contact with the protective materials 1 and 5 at the peripheral portions 1A, 1B, 5A and 5B of the protective materials 1 and 5.
  • the integrated sealing material 24 has a cross-sectional shape in which the outer peripheral end in the in-plane direction DR1 of the protective materials 1 and 5 is recessed in the direction from the outside toward the photoelectric conversion device 3.
  • Sealing material 4 is in contact with photoelectric conversion device 3 and protective material 5 in the region where photoelectric conversion device 3 is present. Moreover, the sealing material 4 is integrated with the sealing material 2 and constitutes the sealing material 24 in the peripheral portions 1A, 1B, 5A, and 5B where the photoelectric conversion device 3 does not exist.
  • the sealing material does not exist in the peripheral portion on the light receiving surface side of the protective material 1 which is a protective material on the light receiving surface side. If the sealing material adheres to the peripheral edge of the protective material 1 on the light receiving surface side, it is not preferable in appearance. Moreover, it is not preferable also from the point that sealing resin adheres to the conveyance system in the processes after the heat treatment process.
  • the photoelectric conversion device 3 is sealed with the sealing materials 2 and 4.
  • the photoelectric conversion module 10 can make the frame body which hold
  • FIG. 3 is a plan view of the wiring sheet.
  • the photoelectric conversion device 3 further includes a wiring sheet 34 shown in FIG. 3 in addition to the positive electrode terminal 31, the negative electrode terminal 32 and the plurality of solar cells 33.
  • the wiring sheet 34 includes regions 341 to 364, a positive electrode mounting pad 11, and a negative electrode mounting pad 12.
  • Each of the regions 341 to 364 includes a positive electrode pad 6, a negative electrode pad 7, and wirings 8 and 9.
  • five positive electrode pads 6 and five negative electrode pads 7 are alternately arranged in parallel with each other.
  • the wiring 8 has one end connected to the five positive electrode pads 6 and the other end connected to the positive electrode mounting pad 11.
  • the wiring 9 has one end connected to the five negative pads 7 and the other end connected to one positive pad 6 in the region 342.
  • the wiring 8 is connected to the five positive electrode pads 6. Further, the wiring 9 in the regions 342 to 345 has one end connected to the five negative electrode pads 7 and the other end connected to one positive electrode pad 6 in each of the regions 343 to 346. Further, the wiring 8 in the region 346 is connected to the five positive pads 6, and the wiring 9 in the region 346 has one end connected to the five negative pads 7 and the other end connected to the wiring 8 in the region 347. Is done.
  • the wiring 8 in the region 347 has one end connected to the five positive electrode pads 6 and the other end connected to the wiring 9 in the region 346. Further, the wiring 9 in the region 347 has one end connected to the five negative pads 7 and the other end connected to one positive pad 6 in the region 348.
  • the wiring 8 in the regions 348 to 351 is connected to five positive electrode pads 6.
  • the wiring 9 in the regions 348 to 351 has one end connected to the five negative pads 7 and the other end connected to one positive pad 6 in the regions 349 to 352, respectively.
  • the wiring 8 in the region 352 is connected to the five positive electrode pads 6.
  • the wiring 9 in the region 352 has one end connected to the five negative electrode pads 7 and the other end connected to the wiring 8 in the region 353.
  • the wiring 8 in the region 353 has one end connected to the five positive electrode pads 6 and the other end connected to the wiring 9 in the region 352.
  • the wiring 9 in the region 353 has one end connected to the five negative pads 7 and the other end connected to one positive pad 6 in the region 354.
  • the wirings 8 in the regions 354 to 357 are connected to the five positive electrode pads 6.
  • the wiring 9 in the regions 354 to 357 has one end connected to the five negative electrode pads 7 and the other end connected to one positive electrode pad 6 in each of the regions 355 to 358.
  • the wiring 8 in the region 358 is connected to the five positive electrode pads 6.
  • the wiring 9 in the region 358 has one end connected to the five negative electrode pads 7 and the other end connected to the wiring 8 in the region 359.
  • the wiring 8 in the region 359 has one end connected to the five positive electrode pads 6 and the other end connected to the wiring 9 in the region 358.
  • the wiring 9 in the region 359 has one end connected to the five negative pads 7 and the other end connected to one positive pad 6 in the region 360.
  • the wiring 8 in the regions 360 to 363 is connected to the five positive electrode pads 6. Further, the wiring 9 in the regions 360 to 363 has one end connected to the five negative electrode pads 7 and the other end connected to one positive electrode pad 6 in each of the regions 361 to 364.
  • the wiring 8 in the region 364 is connected to the five positive electrode pads 6.
  • the wiring 9 in the region 363 has one end connected to the five negative electrode pads 7 and the other end connected to the negative electrode mounting pad 12.
  • the positive electrode mounting pad 11 is connected to the positive electrode terminal 31 shown in FIG. 1, and the negative electrode mounting pad 12 is connected to the negative electrode terminal 32 shown in FIG.
  • FIG. 4 is a cross-sectional view showing a configuration of the solar battery cell 33 shown in FIGS. 1 and 2.
  • solar cell 33 includes an n-type single crystal silicon substrate 331, a light-receiving surface passivation film 332a, a transparent conductive film 332b, positive electrodes 371 to 375, and negative electrodes 376 to 380. .
  • the n-type single crystal silicon substrate 331 has, for example, a thickness of 100 to 300 ⁇ m and a specific resistance of 0.1 to 10 ⁇ cm.
  • the n-type single crystal silicon substrate 331 has a texture structure on the light receiving surface side, and includes p-type diffusion regions 3311 to 3315 and n-type diffusion regions 3316 to 3320 on the back surface side.
  • the p-type diffusion regions 3311 to 3315 and the n-type diffusion regions 3316 to 3320 are disposed in the n-type single crystal silicon substrate 331 in contact with the back surface of the n-type single crystal silicon substrate 331.
  • the p-type diffusion regions 3311 to 3315 and the n-type diffusion regions 3316 to 3320 are alternately arranged in the in-plane direction DR2 of the n-type single crystal silicon substrate 331.
  • Each of the p-type diffusion regions 3311 to 3315 includes, for example, boron (B) as a dopant.
  • B boron
  • the concentration of B is, for example, 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • Each of the n-type diffusion regions 3316 to 3320 includes, for example, phosphorus (P) as a dopant.
  • the concentration of P is, for example, 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • the p-type diffusion regions 3311 to 3315 and the n-type diffusion regions 3316 to 3320 have the same length in the direction perpendicular to the paper surface of FIG.
  • the area occupancy ratio which is the ratio of the entire area of the p-type diffusion regions 3311 to 3315 to the area of the n-type single crystal silicon substrate 331, is 60 to 93%, and the entire area of the n-type diffusion regions 3316 to 3320 is
  • the area occupation ratio which is the ratio of the area to the area of the n-type single crystal silicon substrate 331, is 5 to 20%.
  • the reason why the area occupancy of the p-type diffusion regions 3311 to 3315 is larger than the area occupancy of the n-type diffusion regions 3316 to 3320 is that electrons and holes photoexcited in the n-type single crystal silicon substrate 331 are used. This is because the pn junction (p-type diffusion regions 3311 to 3315 / n-type single crystal silicon substrate 331) is easily separated and the contribution ratio of photoexcited electrons and holes to power generation is increased.
  • the light-receiving surface passivation film 332a is made of a silicon nitride film and has a film thickness of, for example, 50 to 100 nm.
  • the transparent conductive film 332b is disposed in contact with the light receiving surface side of the light receiving surface passivation film 332a. Then, the transparent conductive film 332b is made of SnO 2, ZnO and TiO 2, etc., the thickness is, for example, 20 nm.
  • the positive electrodes 371 to 375 are disposed in contact with the p-type diffusion regions 3311 to 3315, respectively.
  • Negative electrodes 376-380 are arranged in contact with n-type diffusion regions 3316-3320, respectively.
  • Each of the positive electrodes 371 to 375 and the negative electrodes 376 to 380 is composed of a single film or a laminated film of a plurality of metal films selected from silver (Ag), aluminum (Al), titanium (Ti), and the like.
  • the transparent conductive film 332 functions as an antireflection film and releases the charge accumulated on the light receiving surface of the solar cell 33 to the bulk region of the n-type single crystal silicon substrate 331. Thereby, the output fall of the photovoltaic cell 33 by accumulation
  • storage of surface charge can be suppressed, and conversion efficiency can be improved.
  • holes and electrons photoexcited in the n-type single crystal silicon substrate 331 are separated by a pn junction (p-type diffusion regions 3311 to 3315 / n-type single crystal silicon substrate 331). Then, holes reach the positive electrodes 371 to 375 through the p-type diffusion regions 3311 to 3315, and the electrons reach the negative electrodes 376 to 380 through the n-type diffusion regions 3316 to 3320. Electrons that reach the negative electrodes 376 to 380 flow to the positive electrodes 371 to 375 through a load connected between the positive electrodes 371 to 375 and the negative electrodes 376 to 380, and recombine with holes. As a result, current flows to the load.
  • the solar battery cell 33 is a back contact type solar battery that extracts power from the back surface of the n-type single crystal silicon substrate 331.
  • FIG. 5 is a cross-sectional view showing another configuration of the solar battery cell 33 shown in FIGS. 1 and 2.
  • the solar battery cell 33 may be a solar battery cell 33A shown in FIG.
  • solar cell 33A replaces n-type single crystal silicon substrate 331 of solar cell 33 shown in FIG. 4 with n-type single crystal silicon substrate 333, and replaces light-receiving surface passivation film 332a with a light-receiving surface passivation film.
  • positive electrodes 371 to 375 are replaced with positive electrodes 391 to 395
  • negative electrodes 376 to 380 are replaced with negative electrodes 396 to 400
  • p-type amorphous thin films 381 to 385 and n-type amorphous thin films 386 to 390 is added, and the others are the same as those of the solar battery cell 33.
  • the n-type single crystal silicon substrate 333 has, for example, a thickness of 100 to 300 ⁇ m and a specific resistance of 0.1 to 10 ⁇ cm.
  • the n-type single crystal silicon substrate 333 has a texture structure on the light receiving surface side.
  • the light-receiving surface passivation film 332c is made of an i-type amorphous silicon film, and has a film thickness of several nm to 30 nm, for example.
  • the transparent conductive film 332b is disposed in contact with the light receiving surface side of the light receiving surface passivation film 332c.
  • the p-type amorphous thin films 381 to 385 and the n-type amorphous thin films 386 to 390 are alternately arranged in the in-plane direction DR3 of the n-type single crystal silicon substrate 333 in contact with the back surface of the n-type single crystal silicon substrate 333.
  • Each of the p-type amorphous thin films 381 to 385 has an amorphous phase and is made of p-type a-Si, p-type a-SiC, p-type a-SiN, p-type a-SiGe, or the like.
  • Each of the n-type amorphous thin films 386 to 390 has an amorphous phase and is made of n-type a-Si, n-type a-SiC, n-type a-SiN, n-type a-SiGe, or the like.
  • Each of the p-type amorphous thin film 381 to 385 and the n-type amorphous thin film 386 to 390 has a film thickness of 10 to 30 nm, for example.
  • Each of the p-type amorphous thin films 381 to 385 includes, for example, B as a dopant.
  • the concentration of B is, for example, 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • Each of the n-type amorphous thin films 386 to 390 includes, for example, P as a dopant.
  • the concentration of P is, for example, 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • the p-type amorphous thin films 381 to 385 and the n-type amorphous thin films 386 to 390 have the same length in the direction perpendicular to the paper surface of FIG.
  • the area occupancy ratio which is the ratio of the entire area of the p-type amorphous thin film 381 to 385 to the area of the n-type single crystal silicon substrate 333, is 60 to 93%, and the n-type amorphous thin film 386 to
  • the area occupation ratio which is the ratio of the entire area of 390 to the area of the n-type single crystal silicon substrate 333, is 5 to 20%.
  • the area occupancy of the p-type amorphous thin films 381 to 385 is larger than that of the n-type amorphous thin films 386 to 390. This is because electrons and holes are easily separated by a pn junction (p-type amorphous thin film 381 to 385 / n-type single crystal silicon substrate 333), and the contribution ratio of photoexcited electrons and holes to power generation is increased. is there.
  • the positive electrodes 391 to 395 are disposed in contact with the p-type amorphous thin films 381 to 385, respectively.
  • Negative electrodes 396 to 400 are disposed in contact with n-type amorphous thin films 386 to 390, respectively.
  • the positive electrodes 391 to 395 and the negative electrodes 396 to 400 are transparent conductive films such as indium oxide disposed on the sides in contact with the p-type amorphous thin films 381 to 385 and the n-type amorphous thin films 386 to 390, respectively. And a metal layer made of copper or the like disposed in contact with the transparent conductive film.
  • holes and electrons photoexcited in the n-type single crystal silicon substrate 333 are separated by a pn junction (p-type amorphous thin film 381 to 385 / n-type single crystal silicon substrate 333).
  • the holes reach the positive electrodes 391 to 395 via the p-type amorphous thin films 381 to 385, and the electrons reach the negative electrodes 396 to 400 via the n-type amorphous thin films 386 to 390.
  • Electrons that reach the negative electrodes 396 to 400 flow to the positive electrodes 391 to 395 through a load connected between the positive electrodes 391 to 395 and the negative electrodes 396 to 400, and recombine with holes. As a result, current flows to the load.
  • the solar battery cell 33A is also a back contact type solar battery that extracts power from the back surface of the n-type single crystal silicon substrate 333.
  • the solar battery cell 33A includes an n-type single crystal silicon substrate 333 and p-type amorphous thin films 381 to 385, and an n-type single crystal silicon substrate 333 and n-type amorphous thin films 386 to 390.
  • An i-type amorphous thin film inserted into the film may be further provided.
  • the i-type amorphous thin film has an amorphous phase and is made of i-type a-Si, i-type a-SiC, i-type a-SiN, i-type a-SiGe, or the like.
  • the film thickness of the i-type amorphous thin film is, for example, 5 to 10 nm.
  • An i-type amorphous thin film is formed between the n-type single crystal silicon substrate 333 and the p-type amorphous thin film 381 to 385 and between the n-type single crystal silicon substrate 333 and the n-type amorphous thin film 386 to 390.
  • the passivation effect on the back surface of the n-type single crystal silicon substrate 333 can be improved, and recombination of electrons and holes on the back surface of the n-type single crystal silicon substrate 333 can be suppressed.
  • the conversion efficiency of the solar battery cell 33A can be further improved.
  • the solar cells 33 and 33A are provided with the n-type single crystal silicon substrates 331 and 333.
  • the solar cells 33 and 33A are not limited to the p-type.
  • a single crystal silicon substrate, an n-type polycrystalline silicon substrate, a p-type polycrystalline silicon substrate, and a compound semiconductor substrate such as gallium arsenide (GaAs) may be provided.
  • the solar cells 33 and 33A have been described as being back contact solar cells. However, in the first embodiment, the solar cells 33 and 33A are not limited to this, and the solar cells 33 and 33A are disposed on the light receiving surface side. You may consist of the solar cell in which a pn junction or a pin junction exists.
  • each of the solar cells 33 and 33A has been described as including the transparent conductive film 332b on the surface on the light receiving surface side.
  • the solar cells 33 and 33A are not limited thereto.
  • Each of 33A does not need to include the transparent conductive film 332b on the surface on the light receiving surface side.
  • FIG. 6 is a cross-sectional view showing a connection state between the solar battery cell 33 and the wiring sheet 34.
  • FIG. 6 shows a connection state between one solar battery cell 33 and one region of the wiring sheet 34 (any one of the regions 341 to 364).
  • positive electrodes 371 to 375 of solar battery cell 33 are connected to five positive electrode pads 6 respectively, and negative electrode electrodes 376 to 380 of solar battery cell 33 are connected to five negative electrode pads 7 respectively.
  • the solar cells 33 are arranged in one region (any one of the regions 341 to 364) of the wiring sheet 34.
  • the photoelectric conversion device 3 includes the 24 solar cells 33 as described above, the 24 solar cells 33 are arranged in the regions 341 to 364 of the wiring sheet 34 in the manner shown in FIG. Thus, the 24 solar cells 33 are connected in series, and the electric power generated by the 24 solar cells 33 is taken out from the positive electrode mounting pad 11 and the negative electrode mounting pad 12 to the outside.
  • the positive electrodes 391 to 395 of the solar cell 33A are provided in the same manner as in the embodiment shown in FIG. Each is connected to five positive electrode pads 6, and the negative electrodes 396 to 400 of the solar battery cell 33 A are connected to five negative electrode pads 7, respectively.
  • the photoelectric conversion device 3 includes a plurality of solar cells 33 (or a plurality of solar cells 33A) connected in series, and each of the solar cells 33 and 33A includes a single crystal silicon substrate 331 and a solar cell 331, respectively.
  • 333 is formed as a support base. Therefore, in the photoelectric conversion module 10, the support base of the photoelectric conversion device 3 is a semiconductor substrate.
  • FIG. 7 is a process diagram showing a method for manufacturing the photoelectric conversion module 10 shown in FIGS. 1 and 2.
  • an etching process of a semiconductor substrate n-type single crystal silicon substrate
  • the semiconductor substrate n-type single crystal silicon substrate
  • the surface of the semiconductor substrate is chemically anisotropically etched using alkali to texture the surface of the semiconductor substrate (n-type single crystal silicon substrate).
  • the semiconductor substrate (n-type single crystal silicon substrate) is immersed in hydrofluoric acid to remove the natural oxide film formed on the surface of the semiconductor substrate (n-type single crystal silicon substrate), and the semiconductor substrate (n-type silicon substrate).
  • the surface of the single crystal silicon substrate is terminated with hydrogen.
  • step S2 a manufacturing step of the solar battery cell 33 (or the solar battery cell 33A) is executed (step S2). Subsequently, an electrode mounting step is performed (step S3). More specifically, solar cell 33 (or solar cell 33A) is connected to wiring sheet 34, and positive electrode terminal 31 and negative electrode terminal 32 are connected to positive electrode mounting pad 11 and negative electrode mounting pad 12 of wiring sheet 34, respectively. . Thereby, the photoelectric conversion device 3 is manufactured.
  • step S5 the sealing process which seals the protective material 5, the sealing material 4, the photoelectric conversion apparatus 3, the sealing material 2, and the protective material 1 is performed.
  • step S6 the sealing process which seals the protective material 5, the sealing material 4, the photoelectric conversion apparatus 3, the sealing material 2, and the protective material 1 is performed.
  • step S7 the terminal box connection process which connects the terminal box 20 to the positive electrode terminal 31 and the negative electrode terminal 32 is performed.
  • step S8 a conversion efficiency measurement step for measuring the conversion efficiency of the photoelectric conversion module 10 is performed.
  • FIG. 8 and FIG. 9 are first and second process diagrams showing detailed steps of the solar cell manufacturing process S2 shown in FIG. 7, respectively. 8 and 9 show process diagrams for manufacturing the solar battery cell 33 shown in FIG.
  • n-type single crystal silicon substrate 40 having a texture structure formed on one surface is produced (see process (a)).
  • a BSG (Boron Silicate Glass) film 41 and an NSG (Non-doped Silicate Glass) film 42 are sequentially laminated on the back surface of the n-type single crystal silicon substrate 40 by a normal pressure CVD (ChemicalhemVapor Deposition) method (step (b)). reference).
  • the material gas for forming the BSG film 41 is silane (SiH 4 ) gas, oxygen (O 2 ) gas, and diborane (B 2 H 6 ) gas, and the material gas for forming the NSG film 42.
  • SiH 4 gas and O 2 gas are, for example, 10 to 100 nm.
  • BSG film 41 and NSG film 42 are patterned using photolithography and etching to form BSG films 41A to 41E and NSG films 42A to 42E (see step (c)).
  • a PSG (Phosphorus Silicate Glass) film 43 is formed by atmospheric pressure CVD so as to cover the BSG films 41A to 41E, NSG films 42A to 42E and the back surface of the n-type single crystal silicon substrate 40 (see step (d)).
  • the material gas for forming the PSG film 43 is SiH 4 gas, O 2 gas, and phosphine (PH 3 ) gas.
  • the thickness of the PSG film 43 is, for example, 10 to 100 nm.
  • BSG films 41A-41E, NSG films 42A-42E, PSG film 43 and n-type single crystal silicon substrate 40 are heat-treated, and then BSG films 41A-41E, NSG The films 42A to 42E and the PSG film 43 are removed.
  • An n-type single crystal silicon substrate 331 in which type diffusion regions 3316 to 3320 are formed on the back side is manufactured (see step (e)).
  • the heat treatment is performed for 1 hour at a temperature of 800 ° C. in an inert gas atmosphere.
  • NSG films 42A to 42E are disposed between the BSG films 41A to 41E and the NSG film 43, respectively, P from the PSG film 43 formed on the BSG films 41A to 41E is p-type. Diffusion to the diffusion regions 3311 to 3315 is prevented.
  • the film 332a is formed (see step (f)).
  • a transparent conductive film 332b made of SnO 2 , ZnO, TiO 2 or the like is formed on the light-receiving surface side of the light-receiving surface passivation film 332a by vapor deposition, sputtering, thermal CVD, or the like (see step (g)). .
  • FIGS. 10 to 12 are first to third process diagrams showing other detailed processes of the solar cell manufacturing process S2 shown in FIG. 7, respectively. 10 to 12 show process diagrams for manufacturing the solar battery cell 33A shown in FIG.
  • a p-type amorphous thin film 44 is formed on the back surface of the n-type single crystal silicon substrate 333 by plasma CVD (see step (b)).
  • the p-type amorphous thin film 44 is made of p-type a-Si
  • SiH 4 gas and B 2 H 6 gas are used as material gases
  • the p-type amorphous thin film 44 is made of p-type a-SiC
  • SiH 4 gas, methane (CH 4 ) gas, and B 2 H 6 gas are used as material gases
  • the p-type amorphous thin film 44 is made of p-type a-SiN
  • B 2 H 6 gas are used as material gases
  • the p-type amorphous thin film 44 is made of p-type a-SiGe
  • SiH 4 gas, germane (GeH 4 ) gas, and B 2 H 6 gas are used as material gases. Used
  • step (b) a resist is applied onto the p-type amorphous thin film 44, and the applied resist is patterned by photolithography and etching to form a resist pattern 45 (see step (c)).
  • the p-type amorphous thin film 44 is etched using the resist pattern 45 as a mask to form p-type amorphous thin films 381 to 385 (see step (d)).
  • n-type amorphous thin films 386 to 390 are formed on the back surface of n-type single crystal silicon substrate 333 by plasma CVD using resist pattern 45 as a mask (step (e). )reference).
  • resist pattern 45 as a mask
  • an n-type amorphous thin film 46 is formed on the resist pattern 45.
  • n-type amorphous thin films 46 and 386 to 390 are made of n-type a-Si, SiH 4 gas and PH 3 gas are used as material gases, and the n-type amorphous thin films 46 and 386 to 390 are n-type a -When made of SiC, SiH 4 gas, CH 4 gas and PH 3 gas are used as material gases, and when the n-type amorphous thin films 46, 386 to 390 are made of n-type a-SiN, SiH 4 gas, NH 3 gas and PH 3 gas are used as material gases, and when the n-type amorphous thin films 46 and 386 to 390 are made of n-type a-SiGe, SiH 4 gas, GeH 4 gas and PH 3 gas are used as material gases. It is done.
  • step (e) the resist pattern 45 is removed.
  • the n-type amorphous thin film 46 is removed by lift-off, and p-type amorphous thin films 381 to 385 and n-type amorphous thin films 386 to 390 are alternately formed on the back surface of the n-type single crystal silicon substrate 333. (See step (f)).
  • the light-receiving surface passivation film 332c is made of i-type a-Si
  • SiH 4 gas is used as a material gas
  • the light-receiving surface passivation film 332c is made of i-type a-SiC, SiH 4 gas and CH 4 gas are used.
  • Is used as the material gas and the light-receiving surface passivation film 332c is made of i-type a-SiN, SiH 4 gas and NH 3 gas are used as the material gas, and the light-receiving surface passivation film 332c is made of i-type a-SiGe SiH 4 gas and GeH 4 gas are used as material gases.
  • a transparent conductive film 332b made of SnO 2 , ZnO, TiO 2 or the like is deposited, using a sputtering method, a thermal CVD method, or the like, on the light receiving surface side of light receiving surface passivation film 332c. (See step (h)).
  • a transparent conductive film is formed so as to be in contact with the p-type amorphous thin films 381 to 385 and the n-type amorphous thin films 386 to 390 using vapor deposition, sputtering, thermal CVD, or the like, and the formed transparent conductive film
  • An Ag paste or the like is applied in contact with the film, and the applied Ag paste is baked to form positive electrodes 391 to 395 and negative electrodes 396 to 400.
  • the solar battery cell 33A is completed (see step (i)).
  • FIG. 13 is a process diagram showing detailed steps of the electrode attachment step S3 shown in FIG.
  • FIG. 13 is a process diagram in the case where one solar battery cell 33 is connected to the positive electrode pad 6 and the negative electrode pad 7 in one region of the wiring sheet 34.
  • conductive material 13 is placed on five positive electrode pads 6 and five negative electrode pads 7 of wiring sheet 34 (step (a)). reference).
  • the conductive material 13 is made of, for example, an epoxy paste containing silver or solder.
  • the conductive material 13 is placed on the positive electrode pad 6 and the negative electrode pad 7 by any one of printing, application, and transfer.
  • the solar cell 33 is placed in one region (region) of the wiring sheet 34 so that the positive electrodes 371 to 375 are located on the positive electrode pad 6 and the negative electrodes 376 to 380 are located on the negative electrode pad 7. Any one of 341 to 364) (see step (b)).
  • the solar battery cell 33 and the wiring sheet 34 are heated in a high temperature chamber to cure the epoxy paste. Accordingly, the positive electrodes 371 to 375 are connected to the positive electrode pad 6, the negative electrodes 376 to 380 are connected to the negative electrode pad 7, and the solar battery cell 33 is fixed to the wiring sheet 34 (see step (c)).
  • the photoelectric conversion device 3 includes the 24 solar cells 33, actually, the 24 solar cells 33 are formed on the wiring sheet 34 according to the steps (a) to (c) of FIG. Fix it.
  • the positive electrode terminal 31 is soldered to the positive electrode mounting pad 11
  • the negative electrode terminal 32 is soldered to the negative electrode mounting pad 12.
  • FIG. 14 is a process diagram showing detailed steps of the mounting process S4 shown in FIG. Referring to FIG. 14, after electrode attaching step S3 shown in FIG. 7, sealing material 4 is placed on protective material 5 (see step (a)).
  • the photoelectric conversion device 3 is placed on the sealing material 4 so that the peripheral edge portions 5A and 5B described above are formed on the outer peripheral side of the protective material 5 (see step (b)).
  • sealing material 2 and the protective material 1 are sequentially placed on the photoelectric conversion device 3 (see step (c)).
  • the sealing materials 2 and 4 are made of a resin having thermoplasticity as described above. As a result, since the sealing materials 2 and 4 do not have thermosetting property and thermal cross-linking property, they are resins that do not require a cross-linking reaction unlike conventionally used EVA.
  • the sealing materials 2 and 4 are made of an ionomer resin or a polyolefin resin.
  • the thickness of the sealing materials 2 and 4 is preferably in the range of 200 to 600 ⁇ m. This is because the positive electrode terminal 31 and the negative electrode terminal 32 can be surely buried in the sealing materials 2 and 4 with this thickness.
  • the protective materials 1 and 5 are made of tempered glass having a thickness of 3.2 mm.
  • the size of the protective material 1 is substantially the same as the size of the sealing material 2, and the size of the protective material 5 is substantially the same as the size of the sealing material 4.
  • a film-like back sheet may be used as the protective material 5 on the back side.
  • a back sheet a three-layer structure of polyvinyl fluoride (PVF) / aluminum foil / polyvinyl fluoride (PVF), or a three-layer structure of polyethylene terephthalate (PET) / resin film deposited with metal oxide / polyethylene terephthalate (PET) You can use the structure.
  • the resin film deposited with metal oxide functions as a water vapor barrier layer.
  • the thickness of the back sheet is preferably in the range of 50 to 300 ⁇ m.
  • the sealing materials 2 and 4 may be made of an ionomer resin or a polyolefin resin added with a silane coupling agent, or may be made of an ionomer resin or a polyolefin resin containing a silane-modified resin. Adhesion can be increased by adding a silane coupling agent.
  • the sealing materials 2 and 4 include silane coupling.
  • a silane coupling agent is added to the sealing materials 2 and 4. It is because the adhesive force of the sealing materials 2 and 4 will become high if the sealing materials 2 and 4 contain the silane coupling.
  • the sealing materials 2 and 4 may further include particles having a higher thermal conductivity than the sealing materials 2 and 4.
  • the particles are made of, for example, aluminum oxide (alumina), silicon nitride, silicon carbide, zinc oxide, magnesium oxide, aluminum nitride, or boron nitride.
  • the thermal conductivity of aluminum oxide (alumina) is 23 to 36 (W / m ⁇ K), and the thermal conductivity of silicon nitride is 20 to 28 (W / m ⁇ K).
  • the thermal conductivity of 55 to 130 (W / m ⁇ K) is zinc oxide, the thermal conductivity of zinc oxide is 25.2 (W / m ⁇ K), and the thermal conductivity of magnesium oxide is 59 ( W / m ⁇ K), the thermal conductivity of aluminum nitride is 90 to 200 (W / m ⁇ K), and the thermal conductivity of boron nitride is 30 to 50 (W / m ⁇ K). .
  • particles having a thermal conductivity larger than 2 are added to the sealing materials 2 and 4.
  • the heat conductivity inside the photoelectric conversion module 10 can be improved, and the temperature rise at the time of the hot spot generation
  • FIG. 15 is a process diagram showing detailed steps of the sealing step S5 shown in FIG. Referring to FIG. 15, when the mounting step S ⁇ b> 4 shown in FIG. 7 is completed, the protective material 5, the sealing material 4, the photoelectric conversion device 3, the sealing material 2, and the protective material 1 are sequentially stacked ( Step (a)).
  • the protective material 5, the sealing material 4, the photoelectric conversion apparatus 3, the sealing material 2, and the protective material 1 are mounted on the heater plate of the laminating apparatus which is a sealing apparatus.
  • the heater plate is heated to 110 ° C.
  • the upper chamber and lower chamber of the laminator are depressurized to the same pressure.
  • the interface between the protective material 1 and the sealing material 2 the interface between the sealing material 2 and the photoelectric conversion device 3, the interface between the photoelectric conversion device 3 and the sealing material 4, and the sealing material 4 and the protective material 5.
  • the air is removed from the interface with the bubbles, and the bubbles contained in the sealing materials 2 and 4 are removed.
  • the pressure in the upper chamber of the laminator is returned to atmospheric pressure.
  • 1 atmosphere is pressurized to the protective material 5, the sealing material 4, the photoelectric conversion device 3, the sealing material 2, and the protective material 1 to maintain the pressurized state.
  • the heating temperature is preferably 105 to 120 ° C.
  • the photoelectric conversion device 3 cannot be sealed because it is lower than the melting point of the sealing materials 2 and 4.
  • the viscosity of the sealing materials 2 and 4 becomes too low, and the sealing materials 2 and 4 protrude from the end surfaces of the protective materials 1 and 5, and the appearance is poor.
  • the sealing materials 2 and 4 By sealing the protective material 5, the sealing material 4, the photoelectric conversion device 3, the sealing material 2, and the protective material 1 using the method described above, the sealing materials 2 and 4
  • the peripheral portions 1A, 1B, 5A, 5B are integrated to form the sealing material 24.
  • the edge part of the outer peripheral side of the sealing material 24 has a cross-sectional shape depressed in the direction which goes to the photoelectric conversion apparatus 3 from the outside in the in-plane direction of the protective materials 1 and 5.
  • the distance between the protective material 1 and the protective material 5 after sealing is narrower than the distance between the protective material 1 and the protective material 5 before sealing.
  • the sealing material 24 functions to adhere the protective materials 1 and 5 to each other at the peripheral portions 1A, 1B, 5A and 5B of the protective materials 1 and 5 (see step (b)).
  • the photoelectric conversion module 10 is heat-treated.
  • An IR furnace with IR double-side radiation is used as a heat treatment apparatus.
  • the heat treatment apparatus is not limited to the IR furnace, and may be a hot air furnace using hot air.
  • a batch processing apparatus capable of accommodating a plurality of photoelectric conversion modules 10 and heating them at once is preferable.
  • the processing capacity per unit time of the heat treatment apparatus can be improved, and the heat treatment process can be prevented from becoming a bottleneck in the production line.
  • the heat treatment was performed in an air atmosphere. This is because the photoelectric conversion module 10 has a structure in which the photoelectric conversion device 3 is sealed, so that the electrodes on the back surfaces of the solar cells 33 and 33A are not oxidized due to the influence of oxygen in the atmosphere.
  • the photoelectric conversion module 10 was put into a heat treatment apparatus heated to a preset heating temperature without using a process of raising and lowering temperature and heated. Since a process of raising and lowering temperature is not used, it is not necessary to add a process control function to the heat treatment apparatus, and the heat treatment apparatus can be reduced in cost.
  • silicone resin is injected into the terminal box 20 to improve waterproofness.
  • conversion efficiency measurement process After the terminal box connection step S7 shown in FIG. 7, the conversion efficiency of the photoelectric conversion module 10 was measured. By measuring the conversion efficiency of the photoelectric conversion module 10, the photoelectric conversion module 10 having a low conversion efficiency can be excluded as a characteristic defect, and the minimum value of the conversion efficiency of the product can be guaranteed.
  • FIG. 16 is a cross-sectional view showing changes in the sealing materials 2 and 4 in the sealing step S5 and the heat treatment step S6.
  • the ends of the sealing materials 2 and 4 Before the sealing step S5 is started, the ends of the sealing materials 2 and 4 have a right-angle shape.
  • the end portion (end surface 2A) of the sealing material 2 has a contact point a1 with the protective material 1, and the end portion (end surface 4A) of the sealing material 4 has a contact point b1 with the protective material 5. (Refer to FIG. 16A).
  • sealing materials 2 and 4 will pull the protective materials 1 and 5 to each other in the direction of the arrow while melting by heating. And the adhesive force between the sealing material 4 and the protective material 5 are strengthened. As the heating proceeds, the sealing materials 2 and 4 are integrated at the peripheral portions 1A and 5B of the protective materials 1 and 5, and the sealing material 24 is formed.
  • the protective materials 1 and 5 approach each other due to the tensile stress between the protective materials 1 and 5, push the sealing material 24 to the outer peripheral side of the protective materials 1 and 5, and seal as the sealing material 24 softens and melts.
  • the contact points a2 and b2 move outside the contact points a1 and b1 in the in-plane direction of the protective materials 1 and 5. Further, the end surface 24A of the sealing material 24 also moves to the outer side than before the start of the sealing step S5.
  • the protective materials 1 and 5 further approach each other and push the sealing material 24 further outward, and the wettability of the sealing material 24 to the protective materials 1 and 5 further increases, and the sealing material 24 is sealed.
  • the contact points a3 and b3 move further outward than the contact points a2 and b2 in the in-plane direction of the protective materials 1 and 5.
  • the end surface 24B of the sealing material 24 also moves outward from the end surface 24A.
  • FIG. 17 is a diagram for explaining the definition of the contact angle.
  • the end face 24B (see (a))
  • the end face 24B ′ (see (b))
  • the end face 24B ′′ (see (b)))
  • 24B has a cross-sectional shape that is recessed in the direction from the outside toward the photoelectric conversion device 3 in the in-plane direction of the protective materials 1 and 5.
  • the end surface 24B ′ is in the vicinity of the contact points a3 and b3.
  • the end surface 24B ′′ is recessed in the direction toward the photoelectric conversion device 3 from the outside in the in-plane direction of the protective materials 1 and 5 in the vicinity of the contact points a3 and b3. In a region other than the vicinity of the contact points a3 and b3, Having a recessed cross-sectional shape in a direction from the photoelectric conversion device 3 to the outside in the plane direction of Mamoruzai 1,5.
  • the angle ⁇ a formed by the tangents of the end faces 24B, 24B ′, 24B ′′ at the contact points a3, b3 between the sealing material 24 and the protective materials 1, 5 is formed with the protective materials 1, 5.
  • ⁇ b 2; ⁇ a 2 ′, ⁇ b 2 ′; ⁇ a 2 ′′, ⁇ b 2 ′′ are defined as contact angles.
  • the contact angles ⁇ a 2 and ⁇ b 2 and the contact angles ⁇ a 2 ′′ and ⁇ b 2 ′′ are larger than 0 degree and smaller than 90 degrees.
  • the contact angles ⁇ a 2 ′ and ⁇ b 2 ′ are larger than 90 degrees.
  • the contact angle between the end portions on the outer peripheral side of the sealing material 24 and the protective materials 1 and 5 in the in-plane direction of the protective materials 1 and 5 is larger than 0 degrees, and , And an angle smaller than 90 degrees.
  • FIG. 18 is a cross-sectional view of the end portion of the photoelectric conversion module 10.
  • position (A) is defined as a position where the end surface of sealing material 24 is parallel to the normal direction of photoelectric conversion module 10
  • position (B) is defined as the outermost side of protective materials 1 and 5.
  • the position (C) is defined as the position where the protective materials 1 and 5 and the sealing material 24 start to contact
  • the position (D) is defined as the outermost position of the photoelectric conversion device 3.
  • the distance L1 between the position (B) and the position (C) is shorter than the distance L2 between the position (B) and the position (A).
  • the distance L3 between the position (A) and the position (D) is shorter than the distance L4 between the position (C) and the position (D) ((a of FIG. 18 )reference).
  • the distance L1 is longer than the distance L2.
  • the distance L3 is longer than the distance L4 (see FIG. 18B).
  • the contact angle between the sealing material 24 and the protective materials 1 and 5 is larger than 0 degree and smaller than 90 degrees.
  • the contact angle between the sealing material 24 and the protective materials 1 and 5 is larger than 90 degrees.
  • the distance between the outermost position of the protective materials 1 and 5 and the position where the protective materials 1 and 5 and the sealing material 24 start to contact each other is the distance between the protective materials 1 and 5. It is characterized by being shorter than the distance between the outermost position and the position where the end face of the sealing material 24 is parallel to the normal direction of the photoelectric conversion module 10. In the embodiment of the present invention, the distance between the contact point at which the sealing material 24 starts to contact the protective materials 1 and 5 and the photoelectric conversion device 3 is the most depressed point of the sealing material 24 and the photoelectric conversion device. It is characterized by being longer than the distance to 3.
  • the cost of the photoelectric conversion module 10 can be reduced, and the reliability of the photoelectric conversion module 10 can be improved.
  • FIG. 19 is an exploded perspective view showing the configuration of the photoelectric conversion module according to the second embodiment.
  • photoelectric conversion module 410 according to Embodiment 2 includes protective materials 401 and 408, photoelectric conversion device 402, positive electrode current collector 403, negative electrode current collector 404, and extraction electrodes 405 and 406. And a sealing material 407 and a terminal box 409.
  • the protective material 401 is a protective material on the light receiving surface side of the photoelectric conversion module 410.
  • the protective material 401 has a flat plate shape and is made of a translucent insulator.
  • the rectangular light receiving surface having a long side length of 1.4 m and a short side length of 1.0 m. 3.9 mm thick untempered glass having
  • a heat-resistant resin having translucency such as polyimide may be used.
  • the photoelectric conversion device 402 is disposed on the protective material 401.
  • the photoelectric conversion device 402 includes an integrated thin film solar cell.
  • the positive electrode current collector 403 is disposed on one end of the photoelectric conversion device 402 in the in-plane direction DR4 of the protective material 401.
  • the negative electrode current collector 404 is disposed on the other end of the photoelectric conversion device 402 in the in-plane direction DR4.
  • the extraction electrode 405 has one end electrically connected to the positive electrode current collector 403 and the other end bent in the normal direction of the protective material 401.
  • One end of the extraction electrode 406 is electrically connected to the negative electrode current collector 404, and the other end is bent in the normal direction of the protective material 401.
  • the sealing material 407 is disposed between the photoelectric conversion device 402 and the protective material 408.
  • the sealing material 407 has a flat plate shape and is made of the same material as the sealing materials 2 and 4 described above.
  • the protective material 408 is a protective material on the back side of the photoelectric conversion device 402.
  • the protective material 408 is disposed on the sealing material 407. Further, the protective material 408 has a flat plate shape and is made of a glass or film-like back sheet. Furthermore, the protective material 408 has a through hole 408A at the center of the protective material 408 in the in-plane direction DR4.
  • the through hole 408A is a hole through which the other end of the extraction electrodes 405 and 406 penetrates the protective material 408.
  • the terminal box 409 is electrically connected to the other ends of the extraction electrodes 405 and 406 through the through hole 408A.
  • FIG. 20 is a cross-sectional view of the photoelectric conversion module 410 shown in FIG. In FIG. 20, the extraction electrodes 405 and 406 and the terminal box 409 are omitted.
  • the photoelectric conversion device 402 is disposed on one main surface of the protective material 401.
  • the photoelectric conversion device 402 includes a transparent conductive film 52, a photoelectric conversion layer 53, and a back electrode 54.
  • the transparent conductive film 52 is disposed on the protective material 401 across the first separation groove 55 in the in-plane direction of the protective material 401.
  • the transparent conductive film 52 is made of SnO 2 , ZnO, ITO (Indium Tin Oxide), or the like.
  • the width of the first separation groove 55 is about 60 nm, for example.
  • the photoelectric conversion layer 53 is disposed on the transparent conductive film 52 so as to fill the first separation groove 55. In this case, the photoelectric conversion layer 53 is disposed via the second separation groove 56 in the in-plane direction of the protective material 401.
  • the photoelectric conversion layer 53 has, for example, a pin structure in which a p layer, an i layer, and an n layer are sequentially stacked.
  • the i layer is made of an amorphous phase or a microcrystalline phase, for example, i-type amorphous silicon or i-type microcrystalline silicon.
  • the i layer may be made of i-type amorphous silicon germanium or i-type microcrystalline silicon germanium in order to change the optical band gap of the i layer.
  • the p layer and the n layer may be composed of the same silicon based semiconductor layer as the i layer, or may be composed of a silicon based semiconductor layer of a different type from the i layer.
  • the p layer and the i layer may be formed of microcrystalline silicon
  • the n layer may be formed of amorphous silicon.
  • the p layer may be formed of amorphous silicon carbide.
  • each of the p-layer, i-layer, and n-layer may have a single-layer structure or a multi-layer structure. In the case of a multi-layer structure, each of the p-layer, i-layer, and n-layer may be composed of different types of silicon-based semiconductors.
  • the photoelectric conversion layer 53 may have one pin structure, or may have two, three, or four or more pin structures.
  • the photoelectric conversion layer 53 is configured by a tandem junction structure in which a pin structure made of amorphous silicon and a pin structure made of microcrystalline silicon are sequentially stacked.
  • the thickness of the photoelectric conversion layer 53 can be 500 nm to 4000 nm, but is 2000 nm here. Further, the width of the second separation groove 56 is, for example, about 40 nm.
  • the back electrode 54 is disposed on the photoelectric conversion layer 53 so as to fill the second separation groove 56. In this case, the back electrode 54 is disposed via the third separation groove 57 in the in-plane direction of the protective material 401.
  • the back electrode 54 has a structure in which a transparent conductive film and a metal film are sequentially laminated.
  • the transparent conductive film is made of ZnO, SnO 2, ITO, or the like.
  • the metal film is made of Ag, Al, Ti, or the like.
  • the back electrode 54 has a structure in which ZnO and Ag are sequentially laminated.
  • the width of the third separation groove 57 is, for example, about 60 nm.
  • the end portion of the sealing material 407 in the in-plane direction of the protective material 401 is illustrated as having an end surface parallel to the normal direction of the protective material 401. 17A, the contact angle with the protective members 401 and 408 is larger than 0 degree and smaller than 90 degrees, and the photoelectric layer is exposed from the outside in the in-plane direction of the protective members 401 and 408. It has a cross-sectional shape that is recessed in the direction toward the conversion device 402.
  • the cross-sectional shape of the end surface of the sealing material 407 in the in-plane direction of the protective materials 401 and 408 Is set to be the same as the cross-sectional shape of the end surface 24B, moisture remaining at the contact point between the protective material 401 and the sealing material 407 is suppressed, and moisture enters the interface between the protective material 401 and the photoelectric conversion device 402.
  • the withstand voltage performance of the photoelectric conversion device 402 can be improved, so that a highly reliable photoelectric conversion module can be provided.
  • the positive electrode current collector 403 is disposed on the back electrode 54 connected to the photoelectric conversion layer 53 having the highest potential, and the negative electrode current collector 404 is connected to the photoelectric conversion layer 53 having the lowest potential. 54.
  • the thickness of the sealing material 407 is preferably in the range of 200 to 600 ⁇ m, for example, set to 300 ⁇ m. This is because the extraction electrodes 405 and 406 can be reliably buried in the sealing material 407 when the thickness of the sealing material 407 is in the range of 200 to 600 ⁇ m.
  • the photoelectric conversion device 402 has an integrated structure in which a plurality of photoelectric conversion layers 53 are connected in series by the transparent conductive film 52 and the back electrode 54 through the second separation groove 56.
  • the number of stages connected in series can be arbitrarily set according to the specification of the output voltage desired to be obtained from the photoelectric conversion module 410, but here, in order to set the open-circuit voltage of the photoelectric conversion module 410 to 60 to 65V, it is set to 45 stages. Was set.
  • the photoelectric conversion module 410 has a trimming region 58 on the outer peripheral side of the photoelectric conversion device 402.
  • the trimming region 58 is a region where the transparent conductive film 52, the photoelectric conversion layer 53, and the back electrode 54 are not present.
  • the photoelectric conversion module 410 can have sufficient insulating performance.
  • the sealing material is not present at the peripheral portion on the light receiving surface side of the protective material 401 which is a protective material on the light receiving surface side. If the sealing material adheres to the peripheral edge of the protective material 401 on the light receiving surface side, it is not preferable in terms of appearance. Moreover, it is not preferable also from the point that sealing resin adheres to the conveyance system in the processes after the heat treatment process.
  • the photoelectric conversion device 402 is formed on the protective material 401. Therefore, in the photoelectric conversion module 410, the support base of the photoelectric conversion device 402 is the protective material 401.
  • FIG. 21 is a process diagram showing a method for manufacturing the photoelectric conversion module 410 shown in FIGS. 19 and 20.
  • the process diagram shown in FIG. 21 is the same as the process diagram shown in FIG. 7 except that steps S1 and S2 in the process diagram shown in FIG. 7 are replaced with steps S11 and S12, respectively.
  • step S11 when manufacturing of photoelectric conversion module 410 is started, a manufacturing process of a thin-film solar battery cell (transparent conductive film 52, photoelectric conversion layer 53, and back electrode 54) is performed (step S11).
  • step S12 an integrated structure forming step is executed (step S12). Thereafter, the above-described steps S3 to S8 are sequentially performed, and the photoelectric conversion module 410 is manufactured.
  • FIG. 22 and 23 are first and second process diagrams showing detailed processes of the thin-film solar cell manufacturing process S11 and the integrated structure forming process S12 shown in FIG. 21, respectively.
  • transparent conductive film 52 made of SnO 2 is formed on protective material 401 by vapor deposition, sputtering, thermal CVD, or the like (in FIG. 22). Step (a)).
  • the transparent conductive film 52 is irradiated with laser light from the transparent conductive film 52 side to form the first separation groove 55 in the transparent conductive film 52 (see step (b) in FIG. 22).
  • the width of the first separation groove 55 is, for example, about 60 nm.
  • a fundamental wave of a YAG laser was used as the laser light.
  • the photoelectric conversion layer 53 is formed on the transparent conductive film 52 so as to fill the first separation groove 55 by the plasma CVD method (see step (c) in FIG. 22). More specifically, a pin structure made of amorphous silicon and a pin structure made of microcrystalline silicon are sequentially stacked on the transparent conductive film 52 by a plasma CVD method. And the thickness of the photoelectric converting layer 53 is 2000 nm, for example.
  • the photoelectric conversion layer 53 is irradiated with laser light from the protective material 401 side to form the second separation groove 56 in the photoelectric conversion layer 53 (see step (d) in FIG. 22).
  • the width of the second separation groove 56 is, for example, about 60 nm
  • the distance between the first separation groove 55 and the second separation groove 56 is, for example, about 40 nm.
  • the second harmonic of a YAG laser was used as the laser light.
  • a transparent conductive film made of ZnO is deposited on the photoelectric conversion layer 53 by a vapor deposition method, a sputtering method, or the like, and subsequently, a metal layer made of Ag is deposited on the transparent conductive film by a vapor deposition method, a sputtering method, or the like.
  • the back electrode 54 is formed so as to fill the second separation groove 56 (see step (e) in FIG. 22).
  • step (e) laser light is irradiated to photoelectric conversion layer 53 and back electrode 54 from the protective material 401 side to form third separation groove 57 in photoelectric conversion layer 53 and back electrode 54.
  • the width of the third separation groove 57 is, for example, about 60 nm
  • the distance between the second separation groove 56 and the third separation groove 57 is, for example, about 40 nm.
  • the second harmonic of a YAG laser was used as the laser light.
  • the number of stages of photoelectric conversion layers 53 connected in series is 45.
  • the YAG laser second harmonic is applied to the serial connection body in which the photoelectric conversion layers 53 are connected in series to scribe the photoelectric conversion layer 53 and the back electrode 54, and further transparent using the fundamental wave of the YAG laser.
  • the series connection body was divided in parallel by scribing the conductive film 52. This series-connected body divided in parallel is called a cell string.
  • the transparent conductive film 52, the photoelectric conversion layer 53, and the back electrode 54 at the peripheral portion of the protective material 401 are removed using the second harmonic of the YAG laser to form a trimming region 58 (step (g) in FIG. 23). reference).
  • the thin film solar cell manufacturing step S11 and the integrated structure forming step S12 are completed.
  • the YAG laser is used to form the first separation groove 55, the second separation groove 56, and the third separation groove 57.
  • the second embodiment is not limited to this, and the YVO4 laser is used.
  • the first separation groove 55, the second separation groove 56, and the third separation groove 57 may be formed using the fundamental wave, the second harmonic, and the like. Further, the first separation groove 55, the second separation groove 56, and the third separation groove 57 may be formed by a mechanical scribing method, a sand blast method, a water jet, etching, or the like.
  • FIG. 24 is a process diagram showing detailed steps in the second embodiment of the electrode attachment step S3 shown in FIG. Referring to FIG. 24, in electrode attachment step S3, positive electrode current collector 403 is joined to back electrode 54 connected to photoelectric conversion layer 53 having the highest potential in the integrated structure, and photoelectric conversion layer 53 having the lowest potential in the integrated structure.
  • the negative electrode current collector 404 is joined to the back electrode 54 connected to (see step (a)).
  • Each of the positive electrode current collector 403 and the negative electrode current collector 404 is preferably made of a material having high conductivity.
  • a solder-coated copper bus bar was used. Bonding is performed electrically and mechanically, and soldering or conductive paste is used as a bonding means.
  • one end of the extraction electrode 405 is connected to the positive electrode current collector 403, and the other end of the extraction electrode 405 is bent in the normal direction of the protective material 401.
  • one end of the extraction electrode 406 is connected to the negative electrode current collector 404, and the other end of the extraction electrode 406 is bent in the normal direction of the protective material 401.
  • the lead electrodes 405 and 406 are preferably made of a material having high conductivity like the positive electrode current collector 403 and the negative electrode current collector 404, and a soldered copper bus bar was used.
  • the extraction electrode 405 and the positive electrode current collector 403 were joined together and the extraction electrode 406 and the negative electrode current collector 404 were joined together by soldering.
  • the case where the extraction electrode and the current collector are separate components has been described.
  • the extraction electrodes 405 and 406 straddle the plurality of photoelectric conversion layers 53, but the adjacent photoelectric conversion layers 53 are not short-circuited via the extraction electrodes 405 and 406 due to the presence of the insulating film.
  • FIG. 25 is a process diagram showing a detailed process in the second embodiment of the mounting process S4 shown in FIG. Referring to FIG. 25, after electrode attachment step S3 shown in FIG. 21, photoelectric conversion of protective material 401 in which photoelectric conversion device 402, positive current collector 403, negative current collector 404, and extraction electrodes 405 and 406 are formed. On the device 402, the positive electrode current collector 403, the negative electrode current collector 404, and the lead electrodes 405 and 406, the other ends of the lead electrodes 405 and 406 (portions bent in the normal direction of the protective material 401) pass through the through hole 407A. Thus, the sealing material 407 is placed (see step (a)).
  • the protective material 408 is placed on the sealing material 407 so that the other end of the extraction electrodes 405 and 406 (the portion bent in the normal direction of the protective material 401) passes through the through hole 408A (step (b)). reference).
  • the sealing material 407 is made of the same material as the sealing materials 2 and 4 described above.
  • the thickness of the sealing material 407 is, for example, 300 ⁇ m.
  • the protective material 408 is made of tempered glass having a thickness of 3.2 mm.
  • the protective material 408 has a substantially rectangular light receiving surface with a long side length of 1.4 m and a short side length of 1.0 m, and has substantially the same shape as the protective material 401. Further, the protective material 408 has approximately the same size as the sealing material 407.
  • the protective material 408 By using glass as the protective material 408, sufficient strength as the photoelectric conversion module 410 can be secured, and high weather resistance and insulation can be secured. Glass different from the transparent protective material is used as the protective material 408. Double tempered glass or untempered glass may be used as the protective material 408.
  • FIG. 26 is a process diagram showing detailed steps of the sealing step S5 shown in FIG. 21 in the second embodiment.
  • the protective material 401, the photoelectric conversion device 402, the positive current collector 403, the negative current collector 404, the sealing material 407, and the protective material 408 are provided. Are sequentially stacked (see step (a)).
  • the protective material 401, the photoelectric conversion device 402, the positive electrode current collector 403, the negative electrode current collector 404, the sealing material 407, and the protective material 408 are placed on the heater plate of the laminating apparatus which is a sealing device.
  • the heater plate is heated to 110 ° C.
  • the upper chamber and lower chamber of the laminator are depressurized to the same pressure.
  • air is removed from the interface between the protective material 401 and the sealing material 407, the interface between the photoelectric conversion device 402 and the sealing material 407, and the interface between the sealing material 407 and the protective material 408. Bubbles contained in the material 407 are removed.
  • the pressure in the upper chamber of the laminator is returned to atmospheric pressure.
  • 1 atmosphere is pressurized to the protective material 401, the photoelectric conversion device 402, the positive electrode current collector 403, the negative electrode current collector 404, the sealing material 407, and the protective material 408, and the pressurized state is maintained.
  • the heating temperature is preferably 105 to 120 ° C.
  • the photoelectric conversion device 402 cannot be sealed because it is lower than the melting point of the sealing material 407.
  • the viscosity of the sealing material 407 becomes too low, the sealing material 407 protrudes from the end surfaces of the protective materials 401 and 408, and the sealing resin can contaminate the light receiving surface of the protective material 401. Because there is sex.
  • the outer peripheral side of the sealing material 407 The end of each has a cross-sectional shape that is recessed in the direction from the outside toward the photoelectric conversion device 402 in the in-plane direction of the protective materials 401 and 408. Further, the distance between the protective material 401 and the protective material 408 after sealing is narrower than the distance between the protective material 401 and the protective material 408 before sealing. Further, the sealing material 407 functions to adhere the protective materials 401 and 408 to each other at the peripheral portions of the protective materials 401 and 408 (see step (b)).
  • Heat treatment process The heat treatment step is performed for the following two purposes.
  • the sealing material 407 is produced by dehydration condensation of carboxylic acid groups in the sealing material by heating at 150 to 200 ° C. in the heat treatment step. Bonding between 407 and the surfaces of the protective materials 401 and 408 increases, and the adhesive strength is enhanced.
  • the dopant contained in the p layer and n layer of the photoelectric conversion layer 53 is activated and the internal electric field is increased, thereby improving the carrier collection efficiency.
  • the defect density of the i layer increases due to the excessive heat to the i layer, and the conversion efficiency decreases.
  • the heat treatment process in the second embodiment is performed according to the same process as the heat treatment process in the first embodiment.
  • the external output terminal of the terminal box 409 is connected to the other end of the extraction electrodes 405 and 406 (the portion bent in the normal direction of the protective material 401) by soldering.
  • a bypass diode is connected to bypass the output current of another module when the module is shaded. Even if any of the modules connected in series is shaded by this bypass diode, the generated power can be taken out from the other modules, so that the power generation amount can be improved.
  • the terminal box 409 is improved in waterproofness by injecting silicone resin into the inside after soldering.
  • the distance L1 between the position (B) and the position (C) becomes the position (B) and the position ( It is shorter than the distance L2 with A).
  • the distance L3 between the position (A) and the position (D) is shorter than the distance L4 between the position (C) and the position (D).
  • the contact angle between the sealing material 407 and the protective materials 401 and 408 is larger than 0 degree and smaller than 90 degrees.
  • the distance between the outermost position of the protective materials 401 and 408 and the position where the protective materials 401 and 408 and the sealing material 407 start to contact is the outermost position of the protective materials 401 and 408.
  • the distance between the end surface of the sealing material 407 and the position parallel to the normal direction of the photoelectric conversion module 410 is characterized.
  • the distance between the contact point at which the sealing material 407 starts to contact the protective materials 401 and 408 and the photoelectric conversion device 402 is the same as the point at which the sealing material 407 is most depressed and the photoelectric conversion device 402. It is characterized by being longer than the distance.
  • the sealing material 407 contacts the protective materials 401 and 408 at the periphery of the protective materials 401 and 408 in the in-plane direction of the protective materials 401 and 408, and the sealing material 407.
  • the end of the outer peripheral side has a cross-sectional shape that is recessed in the direction from the outside toward the photoelectric conversion device 402 in the in-plane direction of the protective materials 401 and 408.
  • the photoelectric conversion module 410 does not include a frame body that supports the photoelectric conversion module 410 outside the sealing material 407.
  • the cost of the photoelectric conversion module 410 can be reduced, and the reliability of the photoelectric conversion module 410 can be improved.
  • the photoelectric conversion device 402 is described as having a superstrate structure in which the photoelectric conversion layer 53 is formed using the protective material 401 on the light-receiving surface side as a supporting base.
  • the photoelectric conversion device 402 may have a substrate structure in which the photoelectric conversion layer 53 is formed using the protective material 408 on the back surface side as a supporting base.
  • the support base of the photoelectric conversion device 402 is made of the protective material 401 or the protective material 408.
  • the photoelectric conversion device 402 is a thin-film silicon solar cell using an amorphous silicon film or a microcrystalline silicon film.
  • the photoelectric conversion device 402 is not limited to this. , CIS solar cells may be used, or CdTe solar cells may be used.
  • Tables 1 and 2 show examples and comparative examples of photoelectric conversion modules manufactured by changing the heat treatment temperature and the heat treatment time in the heat treatment step S6.
  • Table 1 shows the case where the protective material 5,408 is glass
  • Table 2 shows the case where the protective material 5,408 is a back sheet.
  • the ionomer resins in Examples 1 to 8 were obtained by cross-linking the ethylene-methacrylic acid copolymer molecules with metal ions.
  • the high-temperature and high-humidity test was conducted for 1000 hours in an environment of a temperature of 85 ° C. ⁇ 2 ° C. and a humidity of 85% ⁇ 5% for both the photoelectric conversion module 10 (crystal solar cell module) and the photoelectric conversion module 410 (thin film solar cell module). Conducted under conditions.
  • the international standard relating to the conditions of the high temperature and high humidity test corresponds to IEC61215 for the crystalline solar cell module and to IEC61646 for the thin film solar cell module.
  • a voltage of 6000 V was applied as a test for a photoelectric conversion module having a system voltage of 1000 V, and if the current value was less than 50 ⁇ A, it was determined to be acceptable.
  • the international standard relating to the conditions of the dielectric withstand voltage test corresponds to IEC61215 for the crystalline solar cell module, and corresponds to IEC61646 for the thin film solar cell module.
  • the dielectric strength voltage of the photoelectric conversion modules 10 and 410 is measured, and after the above high temperature and high humidity test is performed, the dielectric strength voltage is again measured. The voltage was measured, and the ratio of the leakage current value during the dielectric withstand voltage test before and after the high temperature and high humidity test was determined. A large ratio means that the degree of deterioration in insulation performance due to the high-temperature and high-humidity test is large.
  • Examples 1 to 8 the deterioration in insulation performance in the high-temperature and high-humidity test environment is smaller than that in Comparative Examples 1 to 4, and good insulation withstand voltage performance can be maintained even in use in harsh environments.
  • a highly reliable photoelectric conversion module can be provided.
  • EVA which is a thermosetting resin
  • EVA is soft at the initial stage of heating, but has heat shrinkability. It hardens while shrinking. Therefore, the end surface of the sealing material before sealing is a right-angled shape, but the sealing material has a corner as shown in FIG. 18B through the sealing step S5 and the heat treatment step S6. It becomes a shape and hardens.
  • Examples 1 to 8 use an ionomer resin that has thermoplasticity and does not have thermosetting properties as the sealing material. Is pulled in the direction of the arrow shown in FIG. 16 (b), thereby strengthening the adhesive force between the sealing material and the protective material. As the heating progresses, the distance between the protective materials is shortened by the tensile stress described above, and the sealing material is pushed out in the direction of the peripheral edge, and as the sealing material softens and melts, the sealing material is sealed. As the wettability of the stop resin to the protective material increases, the sealing resin becomes familiar with the protective material that is glass, and the contact angle between the sealing material and the protective material decreases. As a result, the end surface of the sealing material is considered to have a cross-sectional shape shown in FIG.
  • Example 3 Comparing Example 3 and Example 4, the higher the heat treatment temperature in heat treatment step S6, the more the sealing material has a concave shape (cross-sectional shape of the end face 24B shown in FIG. 18A) by the above mechanism. You can see that it is pushed out. This is because the distance L1 between the position (B) and the position (C) becomes shorter as the heat treatment temperature increases.
  • the contact angle between the sealant and the protective material is preferably an angle larger than 0 degree and smaller than 90 degrees, but larger than 30 degrees and larger than 80 degrees from Examples 1 to 8. If the angle is small, the leakage current value ratio during the dielectric withstand voltage test is smaller than 1.4, which is more preferable.
  • the correlation between the cross-sectional shape of the sealing material and the improvement of the insulation withstand voltage performance is considered as follows.
  • the hot spot test was carried out on a plurality of samples in accordance with IEC 61646 and changing the types of particles having high thermal conductivity dispersed in the sealing material as shown in Table 3.
  • Example 9 a photoelectric conversion module was produced using the same material and the same manufacturing conditions as in Example 7, and a hot spot test was performed.
  • Example 10 and 11 a photoelectric conversion module was produced in the same manner as in Example 7 except that the heat conductive particles were dispersed in the sealant, and a hot spot test was performed.
  • Example 9 using the encapsulant containing no thermally conductive particles is a peeled area after the hot spot test than Comparative Example 5 using the encapsulant containing no thermally conductive particles. The ratio is small.
  • the peeling area ratio after the hot spot test is higher than that in Example 9 using the encapsulant that does not include the thermally conductive particles. Diminished. It is considered that by dispersing the heat conductive particles in the sealing material, the temperature rise at the time of hot spot was suppressed and the peeled area could be reduced.
  • the bonding force of the peripheral portion is increased, and the temperature rise at the time of hot spot is further increased by the effect of the heat conductive particles.
  • the insulation withstand voltage performance and the suppression of peeling at the time of hot spot could be realized at the same time.
  • This invention is applied to a photoelectric conversion module.

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Abstract

L'invention concerne un module de conversion photoélectrique (10) qui comprend un protecteur (1, 5), un matériau de scellage (2, 4), et un convertisseur photoélectrique (3). Le convertisseur photoélectrique (3) comprend une pluralité de cellules photovoltaïques connectées en série. Le convertisseur photoélectrique (3) est disposé entre le protecteur (1) et le protecteur (5) et scellé à l'aide du matériau de scellage (2, 4). Les matériaux de scellage (2, 4) sont intégrés à la périphérie du module de conversion photoélectrique (10), l'angle de contact entre un matériau de scellage intégré (24) et les protecteurs (1, 5) étant supérieur à 0 degré et inférieur à 90 degrés. La section transversale des surfaces d'extrémité du matériau de scellage (24) possède une forme qui est renfoncée par rapport à l'extérieur en direction du convertisseur photoélectrique (3) dans la direction du plan (DR1) du protecteur (1). En outre, un cadre pour soutenir le module de conversion photoélectrique (10) n'est pas présent autour du matériau de scellage (24).
PCT/JP2013/062566 2012-09-28 2013-04-30 Module de conversion photoélectrique WO2014050193A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002721A1 (fr) * 2014-06-30 2016-01-07 日東電工株式会社 Module photovoltaïque, élément conducteur destiné à être utilisé dans ledit module photovoltaïque, et film d'étanchéité
WO2016002720A1 (fr) * 2014-06-30 2016-01-07 日東電工株式会社 Module de cellule solaire, et élément conducteur et film d'étanchéité pour modules de cellule solaire
WO2022268912A1 (fr) * 2021-06-22 2022-12-29 Winterhalder Selbstklebetechnik Gmbh Module photovoltaïque et installation photovoltaïque montée en parallèle

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EP0199233A1 (fr) * 1985-04-17 1986-10-29 Siemens Aktiengesellschaft Elément de construction pour le bâtiment et son application
JP2003273374A (ja) * 2002-03-13 2003-09-26 Sekisui Jushi Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
WO2011039860A1 (fr) * 2009-09-30 2011-04-07 三菱重工業株式会社 Module et panneau de cellule solaire, procédé de fabrication de module de cellule solaire et de panneau de cellule solaire
JP2011222666A (ja) * 2010-04-07 2011-11-04 Sharp Corp 薄膜太陽電池の製造方法
WO2012002422A1 (fr) * 2010-06-30 2012-01-05 シャープ株式会社 Procédé de fabrication d'un module de cellule solaire et module de cellule solaire fabriqué au moyen du procédé

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EP0199233A1 (fr) * 1985-04-17 1986-10-29 Siemens Aktiengesellschaft Elément de construction pour le bâtiment et son application
JP2003273374A (ja) * 2002-03-13 2003-09-26 Sekisui Jushi Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
WO2011039860A1 (fr) * 2009-09-30 2011-04-07 三菱重工業株式会社 Module et panneau de cellule solaire, procédé de fabrication de module de cellule solaire et de panneau de cellule solaire
JP2011222666A (ja) * 2010-04-07 2011-11-04 Sharp Corp 薄膜太陽電池の製造方法
WO2012002422A1 (fr) * 2010-06-30 2012-01-05 シャープ株式会社 Procédé de fabrication d'un module de cellule solaire et module de cellule solaire fabriqué au moyen du procédé

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002721A1 (fr) * 2014-06-30 2016-01-07 日東電工株式会社 Module photovoltaïque, élément conducteur destiné à être utilisé dans ledit module photovoltaïque, et film d'étanchéité
WO2016002720A1 (fr) * 2014-06-30 2016-01-07 日東電工株式会社 Module de cellule solaire, et élément conducteur et film d'étanchéité pour modules de cellule solaire
WO2022268912A1 (fr) * 2021-06-22 2022-12-29 Winterhalder Selbstklebetechnik Gmbh Module photovoltaïque et installation photovoltaïque montée en parallèle

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