WO2014054605A1 - Dispositif de conversion photoélectrique, procédé de fabrication d'un dispositif de conversion photoélectrique, et module de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique, procédé de fabrication d'un dispositif de conversion photoélectrique, et module de conversion photoélectrique Download PDF

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Publication number
WO2014054605A1
WO2014054605A1 PCT/JP2013/076634 JP2013076634W WO2014054605A1 WO 2014054605 A1 WO2014054605 A1 WO 2014054605A1 JP 2013076634 W JP2013076634 W JP 2013076634W WO 2014054605 A1 WO2014054605 A1 WO 2014054605A1
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Prior art keywords
photoelectric conversion
electrode
silicon substrate
conversion device
back surface
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PCT/JP2013/076634
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English (en)
Japanese (ja)
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幸代 大岡
純平 井本
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a photoelectric conversion device, a method for manufacturing a photoelectric conversion device, and a photoelectric conversion module.
  • photoelectric conversion devices that are solar cells, such as compound semiconductors or organic materials, but the mainstream is the one using silicon crystals.
  • silicon substrates have been made thinner due to cost reduction of photoelectric conversion devices.
  • the light receiving surface which is the surface on the incident light side, has a comb-shaped collector electrode, and electrodes are formed on both sides of the back surface, which is the surface opposite to the light receiving surface.
  • the double-sided electrode type photoelectric conversion devices occupy a large number.
  • Non-Patent Document 1 discloses a photoelectric conversion device in which a p + layer is locally provided at a junction between a silicon substrate and a back electrode. It is disclosed as a PERL (Passivated Emitter, Rear Locally-diffused) structure.
  • PERL Passivated Emitter, Rear Locally-diffused
  • FIG. 7 is a typical example of a photoelectric conversion device disclosed in Non-Patent Document 1, and is a schematic diagram showing a cross section.
  • An n-type semiconductor layer 102 is formed on a light-receiving surface (hereinafter referred to as “light-receiving surface of a p-type silicon substrate”) that is a surface on the incident light side of the p-type silicon substrate 101, and the n-type semiconductor layer 102 has an antireflection on the light-receiving surface. Covered by the film 103.
  • the light receiving surface electrode 104 passes through the light receiving surface antireflection film 103 and is connected to the n-type semiconductor layer 102.
  • a back surface passivation film 106 is formed by patterning on the back surface (hereinafter referred to as “back surface of the p-type silicon substrate”) opposite to the light receiving surface of the p-type silicon substrate 101, and corresponds to the patterning.
  • a back surface electric field layer 105 is formed on the back surface of the p-type silicon substrate 101.
  • 107 is a back electrode, and 108 is an aluminum electrode.
  • FIG. 8 is a manufacturing flow diagram showing an example of a method for manufacturing a photoelectric conversion device.
  • the n-type semiconductor layer 102 is formed on the light receiving surface of the p-type silicon substrate 101 by, for example, diffusing phosphorus by heat treatment.
  • the light receiving surface antireflection film 103 is formed on the n-type semiconductor layer 102.
  • a back surface passivation film 106 such as a silicon oxide film is formed on the back surface of the p-type silicon substrate 101.
  • the back surface passivation film 106 is partially removed by patterning to form a contact hole, and the contact hole is filled with aluminum which is a p-type impurity.
  • a back surface field layer 105 corresponding to patterning is formed on the back surface of the p-type silicon substrate 101 by heat treatment, and an aluminum electrode 108 is formed as a take-out electrode.
  • back electrode forming step (S17) aluminum is vapor-deposited so as to cover the back passivation film 106 and the aluminum electrode 108, thereby forming the back electrode 107.
  • the light-receiving surface electrode 104 is formed by patterning the light-receiving surface antireflection film 103.
  • the photoelectric conversion device 100 described in Non-Patent Document 1 obtains an LBSF (Local Back Surface Field) effect by a locally provided back surface field layer 105, and at the same time, a back surface layer portion of the p-type silicon substrate 101 by a back surface passivation film 106.
  • the dangling bonds of silicon atoms are terminated, and the surface recombination rate can be reduced.
  • the photoelectric conversion efficiency and the surface recombination rate are closely related, and the photoelectric conversion efficiency can be increased by reducing the surface recombination rate as described above.
  • the light transmitted through the silicon substrate can be used again for power generation by the silicon substrate by being reflected by the back electrode.
  • the aluminum back electrode as described in the non-patent document has a length exceeding 1000 nm. Since the reflectance of light of a wavelength is small, the power generation efficiency in that wavelength region was low.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a photoelectric conversion device and a photoelectric conversion module that can improve the reflectance of the back electrode and increase the power generation efficiency.
  • the photoelectric conversion device of the present invention includes a first conductive type silicon substrate, a second conductive type semiconductor layer formed on the light receiving surface of the silicon substrate, a light receiving surface electrode formed on the semiconductor layer, and a silicon substrate.
  • a back surface passivation film having a contact hole formed on the back surface, a back surface contact electrode formed at a position corresponding to the contact hole of the silicon substrate and electrically connected to the silicon substrate, and a substantially entire surface of the back surface contact electrode and the back surface passivation film And having a copper electrode that is electrically connected to the back contact electrode.
  • the copper electrode may be a copper foil.
  • the method for manufacturing a photoelectric conversion device of the present invention includes a step of forming a second conductivity type semiconductor layer on a light receiving surface side of a first conductivity type silicon substrate, and a step of forming a second conductivity type semiconductor substrate on a back surface side of the first conductivity type silicon substrate. Forming a back surface passivation film, forming a contact hole penetrating the back surface passivation film, and forming a back surface contact electrode electrically connected to the silicon substrate at a position corresponding to the contact hole of the silicon substrate. And a step of forming a copper electrode electrically connected to the back contact electrode over substantially the entire surface of the back contact electrode and the back passivation film.
  • the step of forming the copper electrode may include a step of bonding or pressure bonding a copper foil.
  • the photoelectric conversion module of the present invention includes a first conductive type silicon substrate, a second conductive type semiconductor layer formed on the light receiving surface of the silicon substrate, a light receiving surface electrode formed on the semiconductor layer, silicon A back surface passivation film having a contact hole formed on the back surface of the substrate, a back surface contact electrode formed at a position corresponding to the contact hole of the silicon substrate and electrically connected to the silicon substrate, and the back surface contact electrode and the back surface passivation film. It is formed by using a plurality of photoelectric conversion devices formed on substantially the entire surface and having a copper electrode electrically connected to the back contact electrode, and connecting an interconnector to each copper electrode of the plurality of photoelectric conversion devices. .
  • the back surface passivation film on the back surface of the photoelectric conversion device reduces the recombination loss of electron-hole pairs, and reflects the light transmitted through the silicon substrate with the copper electrode in close contact with the back surface passivation film, By using the reflected light for power generation, the power generation efficiency of the photoelectric conversion device can be increased.
  • a photoelectric conversion module with high power generation efficiency can be provided.
  • FIG. 2 is a schematic diagram showing a cross section of A-A ′ shown in FIG. 1. It is a graph which shows the measurement result of the spectral reflectance of a back electrode. It is a top view which shows the back surface of the photoelectric conversion apparatus main body of this invention. It is a flowchart which shows the manufacturing method of the photoelectric conversion apparatus of this invention. It is a schematic diagram which shows the photoelectric conversion module of this invention. It is a schematic diagram showing the cross section of an example of the photoelectric conversion apparatus of a prior art. It is a manufacturing flowchart which shows an example of the manufacturing method of the photoelectric conversion apparatus of a prior art.
  • FIG. 1 is a plan view showing a photoelectric conversion device of the present invention.
  • an antireflection film 13 and a light receiving surface electrode 16 are formed on the light receiving surface that is the upper surface of the photoelectric conversion device 10, and the light receiving surface electrode 16 includes a main electrode 15 and a sub electrode 14.
  • the sub-electrode 14 is an electrode that collects carriers, is connected to the main electrode 15, and is formed in a plurality of comb teeth.
  • the main electrode 15 is an electrode for connecting an interconnector used when connecting the photoelectric conversion devices.
  • FIG. 2 is a schematic diagram showing a cross section of A-A ′ shown in FIG.
  • the photoelectric conversion device 10 includes a photoelectric conversion device body 21 and a copper electrode 20 that is a back electrode, and the photoelectric conversion device body 21 is disposed on the copper electrode 20.
  • a photoelectric conversion layer on the light-receiving surface (hereinafter referred to as “light-receiving surface of the silicon substrate”) of the p-type silicon substrate 11 of the first conductivity type having a thickness of about 100 ⁇ m as a photoelectric conversion layer a second layer such as phosphorus is used.
  • An n + diffusion layer 12 in which an n-type conductive material, which is a conductive type, is diffused is formed.
  • the surface of the light receiving surface of the silicon substrate has an uneven structure that is a texture structure.
  • a silicon nitride antireflection film 13 is formed thereon.
  • the first conductivity type is p-type and the second conductivity type is n-type.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • a photoelectric conversion device may be formed.
  • a light-receiving surface electrode 16 is formed on the light-receiving surface of the p-type silicon substrate 11, the sub-electrode 14 penetrates the antireflection film 13, and the light-receiving surface electrode 16 and the n + diffusion layer 12 that is an n-type semiconductor layer are electrically connected. It is connected to the.
  • the light receiving surface electrode 16 and the n + diffusion layer 12 may be electrically connected by at least the sub electrode 14. In FIG. 2, the uneven structure on the surface of the light receiving surface is omitted.
  • a back surface passivation film 19 formed of a silicon nitride film is formed on the back surface (hereinafter referred to as “the back surface of the silicon substrate”) that is the surface opposite to the light receiving surface of the silicon substrate 11.
  • the back surface passivation film 19 has a through hole 22 that is a contact hole reaching the silicon substrate 11, and a plurality of back surface electric field layers 18 are formed at positions corresponding to the through holes 22 of the silicon substrate 11.
  • the back surface electric field layer 18 has a BSF (Back Surface Field) effect.
  • an aluminum electrode 17 that is a back contact electrode is formed at a position corresponding to the through hole 22.
  • a copper electrode 20 is formed on the back surface passivation film 19 and on the surface of the aluminum electrode 17 opposite to the silicon substrate 11.
  • the copper electrode 20 is formed so as to cover substantially the entire back surface of the photoelectric conversion device main body 21.
  • the copper electrode 20 is electrically connected to the aluminum electrode 17 and is electrically connected to the silicon substrate 11.
  • the copper electrode 20 can be formed by adhering or pressure-bonding a copper foil to the back surface of the photoelectric conversion device main body 21, or by depositing copper on the back surface of the photoelectric conversion device main body 21.
  • the copper electrode 20 has a BSR (Back Surface Reflector) effect that reflects the light passing through the photoelectric conversion device main body and makes it incident on the photoelectric conversion device main body 21 again. That is, the power generation efficiency of the photoelectric conversion device 10 can be increased by causing the reflected light to contribute to power generation due to the BSR effect of the copper electrode 20.
  • BSR Back Surface Reflector
  • the adhesive is screen printed on the back surface of the photoelectric conversion device main body 21. It suffices for the adhesive to be arranged in several points. After printing the adhesive, the copper foil is pressed against the photoelectric conversion device main body 21 and attached to the photoelectric conversion device main body 21. At this time, the portion without the adhesive is also in close contact with the copper foil by pressing the copper foil. In this way, the copper foil can be bonded to the photoelectric conversion device main body 21.
  • the area where the adhesive exists is extremely small, and since the copper foil and the photoelectric conversion device main body 21 are in direct contact with each other in most parts, the adhesive hardly disturbs the BSR effect of the copper foil.
  • the copper foil is bonded without heating to form the copper electrode 20.
  • the back electrode is formed by applying an electrode material on the back surface and baking at a high temperature. Less warping of the board. Therefore, damage to the photoelectric conversion device in the process of producing the photoelectric conversion module is reduced.
  • FIG. 3 is a graph showing the measurement results of the spectral reflectance of the back electrode.
  • Cells with back electrodes formed of aluminum vapor deposition, aluminum paste, and copper foil were prepared, and the spectral reflectance of each cell was measured. Since a photoelectric conversion device using a silicon substrate can use light having a wavelength of up to about 1100 nm for power generation, spectral reflectance up to about 1100 nm is important.
  • the reflectance of light at a long wavelength of 1000 nm or more is higher for copper foil than aluminum vapor deposition or aluminum paste. Therefore, the copper electrode can efficiently reflect long-wavelength light that easily passes through a thin silicon substrate, and can contribute to improvement in photoelectric conversion efficiency as compared with the case where aluminum is used as the back electrode. From this, it can be said that at a long wavelength, the copper electrode has a higher BSR effect than the back electrode formed of aluminum.
  • the back electrode is formed of copper foil, there is no baking process of the back electrode as in the case where the back electrode is made of aluminum paste, so that the photoelectric conversion device is unlikely to be bent and cracking in the module process is unlikely to occur.
  • the electrical characteristics of the photoelectric conversion device are maintained by the copper foil covering almost the entire back surface, realizing a highly durable photoelectric conversion module. can do.
  • FIG. 4 is a plan view showing the back surface of the photoelectric conversion device main body of the present invention.
  • the aluminum electrode 17 is formed in a plurality of dots on the back surface of the photoelectric conversion device main body 21, and in FIG. 4B, the aluminum electrode 17 is formed on the back surface of the photoelectric conversion device main body 21. It is formed in stripes.
  • the portion other than the aluminum electrode 17 is a back surface passivation film 19.
  • a copper foil is adhered on the back surface passivation film 19 and the aluminum electrode 17 or copper is deposited to form the copper electrode 20.
  • the aluminum electrode 17 is in the form of dots as shown in FIG. 4A, the light transmitted through the back surface of the silicon substrate can be used without any surplus by using the back electrode made of copper foil. Is expensive.
  • FIG. 5 is a flowchart showing a method for manufacturing the photoelectric conversion device of the present invention.
  • a p-type polycrystalline silicon substrate 11 sliced from an ingot is prepared.
  • the silicon substrate 11 has a square shape with a side of 156 mm, a thickness of 0.15 mm, and a specific resistance of about 1.5 ⁇ cm.
  • the entire surface of the p-type silicon substrate 11 of the first conductivity type is subjected to texture etching using an alkaline solution to 20 ⁇ m. Etching is performed to the extent that the crushed layer on the surface of the silicon substrate 11 generated by slicing the ingot is removed, and an uneven structure, which is a texture structure of the light receiving surface, is formed.
  • the silicon substrate 11 is heat-treated in an electric furnace at a temperature of 840 ° C. for 20 minutes in an atmosphere containing POCl 3 to diffuse phosphorus in a vapor phase on the surface of the silicon substrate 11. Then, an n-type semiconductor layer which is the second conductivity type is formed. Furthermore, after removing the PSG (phosphorus glass) layer and the like in the HF aqueous solution, washing and drying were performed to obtain the n + diffusion layer 12 on the light receiving surface side where the sheet resistance of the diffusion layer was about 70 ⁇ / cm.
  • the formation of the n + diffusion layer 12 is not a vapor phase diffusion but a coating diffusion method in which a coating solution containing phosphorus of an n-type impurity is applied to the light-receiving surface of the p-type silicon substrate 11 and heat treatment is performed. It may be used.
  • a silicon nitride film having a film thickness of about 70 nm is laminated on the n + diffusion layer 12 by plasma CVD using silane and ammonia as gas species.
  • the prevention film 13 is formed.
  • a protective tape having acid resistance for preventing etching is applied to the light receiving surface of the silicon substrate 11, and the back surface of the silicon substrate 11 is wet using a mixed solution of hydrofluoric acid and nitric acid.
  • etching the n-type semiconductor layer formed on the back surface of the silicon substrate 11 is removed and the back surface of the silicon substrate 11 is planarized. At this time, the uneven structure and the n-type semiconductor layer formed on the end surface of the silicon substrate 11 are also removed.
  • a back surface passivation film 19 is formed by laminating a silicon nitride film on the back surface of the flattened silicon substrate 11 by plasma CVD.
  • the back surface passivation film 19 is etched into a predetermined pattern by photolithography to form a through hole 22 that is a contact hole that penetrates the back surface passivation film 19.
  • an aluminum paste made of aluminum powder, glass frit, resin, organic solvent, etc. is printed and dried in the near-infrared furnace in the through-hole portion by screen printing.
  • aluminum is diffused on the back surface of the p-type silicon substrate 11 corresponding to the through hole 22 to form the back surface electric field layer 18 that is a diffusion layer.
  • the back surface electric field layer 18 which is an aluminum diffusion layer becomes a p-type semiconductor layer.
  • the p-type impurity concentration of the back surface electric field layer 18 is higher than the p-type impurity concentration of the silicon substrate 11.
  • the aluminum electrode 17 which is a back surface contact electrode is formed in a through-hole by the said baking.
  • the light-receiving surface electrode forming step (S8) using a screen printing method, a silver paste made of silver powder, glass frit, resin, organic solvent, etc. is printed, dried, and baked at 500 ° C. or higher.
  • a light receiving surface electrode 16 is formed.
  • the light receiving surface electrode 16 is formed through the antireflection film 13 during firing and is electrically connected to the n + diffusion layer 12.
  • the main electrode 15 and the sub electrode 14 are formed using different silver pastes, at least the sub electrode 14 is formed in contact with the n + diffusion layer 12 after firing. That's fine. In this way, the photoelectric conversion device main body 21 is manufactured.
  • a copper foil is bonded to the back surface of the photoelectric conversion device main body 21 to form the copper electrode 20.
  • the copper foil has a square shape with a side of 155 mm and a thickness of 10 ⁇ m.
  • the copper foil is bonded to the aluminum electrode 17 and the back surface passivation film 19 with an adhesive.
  • the adhesive is screen-printed on the back surface of the photoelectric conversion device main body 21. It suffices for the adhesive to be arranged in several points. After printing the adhesive, the copper foil is pressed against the photoelectric conversion device main body 21 and attached to the photoelectric conversion device main body 21. At this time, the portion without the adhesive is also in close contact with the copper foil by pressing the copper foil. In this way, the copper foil can be bonded to the photoelectric conversion device main body 21.
  • the area where the adhesive is present is extremely small, and the copper foil and the photoelectric conversion device main body 21 are in direct contact with each other in most parts, so that the adhesive hardly disturbs the BSR effect of the copper foil.
  • the copper electrode 20 is formed by bonding the copper foil without heating after the light-receiving surface electrode 16 is formed, the electrode material is applied to the back surface, and the back electrode is formed by baking at a high temperature. Less warping of the board. Therefore, damage to the photoelectric conversion device in the process of producing the photoelectric conversion module is reduced.
  • FIG. 6 is a schematic diagram showing a photoelectric conversion module of the present invention.
  • the photoelectric conversion device 10 is connected to the adjacent photoelectric conversion device 10 by an interconnector 31.
  • the interconnector 31 electrically connects the main electrode 15 of the photoelectric conversion device 10 and the copper electrode 20 on the back surface of the adjacent photoelectric conversion device 10.
  • the photoelectric conversion device 10 is sealed with a filler 32 such as EVA (ethylene-vinyl acetate copolymer resin).
  • EVA ethylene-vinyl acetate copolymer resin
  • a glass 35 is provided on the light receiving surface side of the filler, and a back film 36 is provided on the back surface.
  • the glass 35, the filler 32, and the back film 36 are formed in a plate shape by a laminator, and the periphery thereof is supported by a frame body 37 to form the photoelectric conversion module 30.
  • Example 2 uses a copper foil having a fine texture for the copper foil used for the copper electrode 20.
  • the back electrode forming step (S9) for forming the copper electrode 20 described above if a copper foil having a fine texture is used instead of the smooth copper foil used in Example 1, the copper electrode 20 having fine irregularities formed thereon. Can be obtained. Due to the fine irregularities formed on the copper electrode 20, the light that has passed through the silicon substrate 11 is irregularly reflected on the surface of the copper electrode 20, and light that increases the optical path length in the silicon substrate 11, that is, to the silicon substrate 11. As the incident angle increases, the reflected light increases, the probability of photoelectric conversion increases, and the power generation efficiency increases.
  • the configuration of the photoelectric change device main body 21 is the same as that of the first embodiment.
  • Example 3 the copper electrode 20 was formed by pressure-bonding a copper foil with a laminator.
  • the back electrode forming step (S9) for forming the copper electrode 20 when the back sheet, EVA, copper foil, and the photoelectric conversion device main body 50 are pressure-bonded in this order by a laminator, the copper foil is in close contact with the back surface of the photoelectric conversion device main body 50. Then, the copper electrode 20 is formed. Then, EVA is peeled from the photoelectric conversion apparatus 10 with a back sheet. Thus, the photoelectric conversion device 10 in which the copper electrode 20 on the back surface is formed by pressure bonding is obtained.
  • the configuration of the photoelectric conversion device main body 21 is the same as that of the first embodiment.
  • Comparative Example 1 5 ⁇ m of aluminum was formed on the entire back surface of the photoelectric conversion device main body by a vapor deposition device as a back electrode.
  • the configuration of the photoelectric conversion device main body is the same as that of the first embodiment.
  • Comparative Example 2 an aluminum layer is directly formed on the back surface of the silicon substrate as a back electrode.
  • Table 1 shows the results of the characteristics of the photoelectric conversion modules of Examples and Comparative Examples.
  • Jsc is a short-circuit current density
  • Voc is an open circuit voltage
  • FF is a fill factor
  • Eff is a photoelectric conversion efficiency.
  • the number of cells broken in the interconnector connection process is shown in the column of the interconnector crack. In the laminate crack column, the number of cells cracked in the lamination process is shown.
  • the photoelectric conversion module using the photoelectric conversion device in which the back surface was made of copper foil in Examples 1 and 3 was the photoelectric conversion device in which the back surface was prepared by aluminum deposition of Comparative Example 1 or the aluminum paste of Comparative Example 2. Both the short circuit current density (Jsc) and the open circuit voltage (Voc) were higher than the photoelectric conversion module used, and a high photoelectric conversion efficiency (Eff) could be obtained.
  • Example 2 Furthermore, the cell produced using the textured copper foil in Example 2 was able to obtain higher short-circuit current density (Jsc), open circuit voltage (Voc), and higher photoelectric conversion efficiency (Eff).
  • Jsc short-circuit current density
  • Voc open circuit voltage
  • Eff photoelectric conversion efficiency
  • the back electrode is formed of copper foil, there is no baking process of the back electrode as in the case of forming the back electrode with aluminum paste, so that the photoelectric conversion device is not easily bent. Therefore, the crack in the module process which uses the laminator to which force is applied from the up-down direction of the photoelectric conversion device hardly occurs.
  • the photoelectric conversion module is used as a solar cell, the electrical characteristics of the photoelectric conversion device are maintained by the copper foil covering almost the entire back surface. A conversion module can be realized.

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Abstract

L'invention concerne un dispositif de conversion photoélectrique capable d'accroître le rendement de génération électrique en empêchant l'émission d'une lumière de grande longueur d'onde à travers un substrat en silicium ; et un module de conversion photoélectrique. Une électrode en cuivre est formée de façon générale sur les surfaces entières d'une électrode de contact de face arrière et d'un film de passivation de face arrière d'un dispositif de conversion photoélectrique, ladite électrode en cuivre étant reliée électriquement à l'électrode de contact de face arrière.
PCT/JP2013/076634 2012-10-05 2013-10-01 Dispositif de conversion photoélectrique, procédé de fabrication d'un dispositif de conversion photoélectrique, et module de conversion photoélectrique WO2014054605A1 (fr)

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JP2012222734A JP2014075505A (ja) 2012-10-05 2012-10-05 光電変換装置、光電変換装置の製造方法および光電変換モジュール

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JP6444268B2 (ja) * 2015-06-08 2018-12-26 三菱電機株式会社 太陽電池および太陽電池の製造方法
JP6486219B2 (ja) * 2015-06-24 2019-03-20 三菱電機株式会社 太陽電池の製造方法
JP2017228636A (ja) * 2016-06-22 2017-12-28 シャープ株式会社 太陽電池セル及び太陽電池モジュール

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167967A (ja) * 1984-09-11 1986-04-08 Sharp Corp 太陽電池ｂｓｒ電極構造
JPH01129470A (ja) * 1987-11-16 1989-05-22 Fuji Electric Co Ltd 非晶質半導体簿膜太陽電池
WO2010119512A1 (fr) * 2009-04-14 2010-10-21 三菱電機株式会社 Dispositif photovoltaïque et son procédé de fabrication
WO2011077963A1 (fr) * 2009-12-25 2011-06-30 三菱電機株式会社 Cellule solaire et son procédé de production

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167967A (ja) * 1984-09-11 1986-04-08 Sharp Corp 太陽電池ｂｓｒ電極構造
JPH01129470A (ja) * 1987-11-16 1989-05-22 Fuji Electric Co Ltd 非晶質半導体簿膜太陽電池
WO2010119512A1 (fr) * 2009-04-14 2010-10-21 三菱電機株式会社 Dispositif photovoltaïque et son procédé de fabrication
WO2011077963A1 (fr) * 2009-12-25 2011-06-30 三菱電機株式会社 Cellule solaire et son procédé de production

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